JP2009522756A - 光学的にポンピングされる半導体装置 - Google Patents
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Abstract
Description
図1Aは、半導体装置の第1の実施例による、本方法の半導体装置のポンプユニットの概略的な断面図を示す。
図1Bは、第1の実施例による、光学的にポンピングされる半導体装置のポンプユニットの概略的な平面図を示す。
図1Cは、第2の実施例による、光学的にポンピングされる半導体装置の概略的な断面図を示す。
図1Dは、第2の実施例による、光学的にポンピングされる半導体装置の概略的な斜視図を示す。
図1Eは、第1または第2の実施例による、受動的な光学素子が取り付けられる前の、光学的にポンピングされる半導体装置のポンプユニットの概略的な断面図を示す。
図1Fは、第1または第2の実施例による、光学的にポンピングされる半導体装置のポンプユニットの概略的な平面図を示す。
図2Aは、第3の実施例による、本発明の半導体装置のポンプユニットの概略的な斜視図を示す。
図2Bは、第3の実施例による表面発光型の半導体装置の第1の角度での概略的な斜視図を示す。
図2Cは、第3の実施例による表面発光型の半導体装置の第2の角度での概略的な斜視図を示す。
図2Dは、第3の実施例による、光学的にポンピングされる半導体装置の概略的な平面図を示す。
図2Eおよび2Fは、第3の実施例による、光学的にポンピングされる半導体装置の種々の方向からの概略的な断面図を示す。
図2Gは、第3の実施例による、受動的な光学素子が実装される前の、光学的にポンピングされる半導体装置のポンプユニットの概略的な断面図を示す。
図2Hは、所属の概略的な平面図を示す。
図3A,3B,3Cおよび3Dは、本発明の半導体装置の実施例に関する共振器載着体40の製造工程を概略的な平面図で示す。
図3Eは、そのようにして製造された共振器載着体40の概略的な断面図を示す。
図3Fは、そのようにして製造された共振器載着体40の概略的な平面図を示す。
図4A〜4Dは、本発明の半導体装置の実施例に使用される共振器ミラー31を製造するための製造方法を示す。
図5は、例えば図1および図2を参照しながら説明した本発明の半導体装置の実施例において使用されるような、マトリクス状に配置されている複数の端子支持体14を有する端子支持体結合体50を示す。
図6Aは、例えば図1および図2を参照しながら説明した本発明の半導体装置の実施例において使用されるような、マトリクス状に配置されている複数の端子支持体14を有する端子支持体結合体50を示す。
図6Bは、端子支持体50の裏面の概略的な平面図を示す。
図6Cは、端子支持体50の概略的な断面図を示す。
図6Dは、端子支持体結合体50の端子支持体14の概略的な平面図を示す。
−複数の構成素子をストライプとして1つのステップで実装し、後にパネルと一緒に個別化する、
−プリズムのストライプまたはレンズのストライプを被着する、
−バキュームツールにおいてマトリクス状に自動調整されて装填されている個々の部品を実装する。
Claims (20)
- 光学的にポンピングされる半導体装置において、
表面発光型の半導体ボディ(1)を有し、該半導体ボディ(1)は放射通過面(1a)を有し、該放射通過面(1a)は前記半導体ボディ(1)の実装平面とは反対側に位置しており、
光学素子(7)を有し、該光学素子(7)はポンプ放射(17)を前記半導体ボディ(1)の前記放射通過面(1a)へと偏向させることに適していることを特徴とする、光学的にポンピングされる半導体装置。 - 半導体レーザ素子を有し、該半導体レーザ素子はポンプ放射源(2)として設けられている、請求項1記載の光学的にポンピングされる半導体装置。
- 前記ポンプ放射源(2)は前記半導体ボディ(1)の前記実装平面に対して平行な平面に配置されている、請求項2記載の光学的にポンピングされる半導体装置。
- 前記半導体ボディ(1)、前記光学素子(7)および前記ポンプ放射源(2)は共通の第1の支持体(14)上に配置されている、請求項2または3記載の光学的にポンピングされる半導体装置。
- 前記第1の支持体(14)は端子支持体によって形成されており、該端子支持体に前記ポンプ放射源(2)が電気的に接続されている、請求項4記載の光学的にポンピングされる半導体装置。
- 前記光学素子(7)は前記ポンプ放射(17)を光学的な屈折によって前記半導体ボディ(1)の前記放射通過面(1a)へと偏向させることに適している、請求項1から5までのいずれか1項記載の光学的にポンピングされる半導体装置。
- 前記光学素子(7)は前記ポンプ放射(17)を反射、例えば1回の反射によって前記放射通過面(1a)へと偏向させることに適している、請求項1から6までのいずれか1項記載の光学的にポンピングされる半導体装置。
- 前記光学素子(7)は前記ポンプ放射(17)を前記半導体ボディ(1)の前記放射通過面(1a)の方向へと偏向させることに適している、請求項1から7までのいずれか1項記載の光学的にポンピングされる半導体装置。
- 前記半導体ボディ(1)は前記実装平面において前記ポンプ放射源(2)と前記光学素子(7)との間に配置されている、請求項2から8までのいずれか1項記載の光学的にポンピングされる半導体装置。
- 半導体装置の動作時に前記ポンプ放射(17)は、前記半導体ボディ(1)の前記放射通過面(1a)に入射する前に、該放射通過面(1a)を超えて延びる、請求項1から9までのいずれか1項記載の光学的にポンピングされる半導体装置。
- 共振器載着体(40)を有し、該共振器載着体(40)は前記半導体ボディ(1)の主放射方向において該半導体ボディ(1)の前記実装平面に後置されている、請求項1から10までのいずれか1項記載の光学的にポンピングされる半導体装置。
- 前記共振器載着体(40)は第2の支持体(34)を有し、該第2の支持体(34)上には共振器ミラー(31)が固定されている、請求項11記載の光学的にポンピングされる半導体装置。
- 前記共振器載着体(40)はスペーサ素子(8,4,7)により前記半導体ボディ(1)の前記実装平面から間隔を置いて配置されている、請求項11または12記載の光学的にポンピングされる半導体装置。
- 前記スペーサ素子(4,7)は光学素子を有するか、光学素子から形成されている、請求項13記載の光学的にポンピングされる半導体装置。
- 前記共振器載着体(40)は周波数変換素子(32)を有する、請求項11から14までのいずれか1項記載の光学的にポンピングされる半導体装置。
- 前記共振器載着体(40)は加熱素子(60)を有し、該加熱素子(60)は前記周波数変換素子(31)と熱電的に接続されている、請求項11から15までのいずれか1項記載の光学的にポンピングされる半導体装置。
- 前記第2の支持体(34)は金属コーティング部(60)を有し、該金属コーティング部(60)を用いて前記共振器載着体(40)の温度が高められ、求められる、請求項12から16までのいずれか1項記載の光学的にポンピングされる半導体装置。
- 前記共振器載着体(40)は前記第1の支持体(14)と導電的に接続されている、請求項11から17までのいずれか1項記載の光学的にポンピングされる半導体装置。
- 半導体装置の動作時に前記共振器載着体(40)の平均温度は、前記第1の支持体(14)の平均温度よりも少なくとも10K高い、請求項11から18までのいずれか1項記載の光学的にポンピングされる半導体装置。
- 請求項1から19までのいずれか1項記載の光学的にポンピングされる半導体装置と、該光学的にポンピングされる半導体装置を駆動制御するために設けられている駆動装置とを有することを特徴とする、光学式投影装置。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102005063104.5 | 2005-12-30 | ||
DE102005063104 | 2005-12-30 | ||
DE102006017294A DE102006017294A1 (de) | 2005-12-30 | 2006-04-12 | Optisch pumpbare Halbleitervorrichtung |
DE102006017294.9 | 2006-04-12 | ||
PCT/DE2006/002332 WO2007076841A1 (de) | 2005-12-30 | 2006-12-29 | Vertikal emittierender, optisch gepumpter halbleiter mit externem resonator und frequenzverdopplung auf separatem substrat |
Publications (2)
Publication Number | Publication Date |
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JP2009522756A true JP2009522756A (ja) | 2009-06-11 |
JP5232010B2 JP5232010B2 (ja) | 2013-07-10 |
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JP2008547847A Active JP5232010B2 (ja) | 2005-12-30 | 2006-12-29 | 光学的にポンピングされる半導体装置および光学式投影装置 |
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US (1) | US8396092B2 (ja) |
EP (1) | EP1966858B1 (ja) |
JP (1) | JP5232010B2 (ja) |
KR (1) | KR101325413B1 (ja) |
CN (1) | CN101351937B (ja) |
DE (1) | DE102006017294A1 (ja) |
TW (1) | TWI331430B (ja) |
WO (1) | WO2007076841A1 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
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DE102007062047A1 (de) | 2007-12-21 | 2009-07-16 | Osram Opto Semiconductors Gmbh | Kompaktgehäuse |
DE102008009108A1 (de) | 2008-02-14 | 2009-08-20 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Halbleiterlasers sowie Halbleiterlaser |
DE102008009110A1 (de) | 2008-02-14 | 2009-08-20 | Osram Opto Semiconductors Gmbh | Halbleiterlasermodul |
DE102008010297A1 (de) | 2008-02-21 | 2009-10-29 | Osram Opto Semiconductors Gmbh | Frequenz-Konversions-Vorrichtung und Verfahren zur Herstellung einer Frequenz-Konversions-Vorrichtung |
DE102008044641A1 (de) * | 2008-04-28 | 2009-10-29 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
DE102008030254A1 (de) * | 2008-06-25 | 2009-12-31 | Osram Opto Semiconductors Gmbh | Halbleiterlasermodul |
US8867582B2 (en) | 2012-04-04 | 2014-10-21 | Osram Opto Semiconductors Gmbh | Laser diode assembly |
US9008138B2 (en) | 2012-04-12 | 2015-04-14 | Osram Opto Semiconductors Gmbh | Laser diode device |
DE102012103160A1 (de) * | 2012-04-12 | 2013-10-17 | Osram Opto Semiconductors Gmbh | Laserdiodenvorrichtung |
DE102013224581A1 (de) * | 2013-11-29 | 2015-06-03 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zu seiner Herstellung |
US10174931B2 (en) * | 2015-06-03 | 2019-01-08 | Apple Inc. | Integrated optical modules with enhanced reliability and integrity |
JP2017059661A (ja) * | 2015-09-16 | 2017-03-23 | ウシオ電機株式会社 | 外部共振器型レーザ装置 |
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2006
- 2006-04-12 DE DE102006017294A patent/DE102006017294A1/de not_active Withdrawn
- 2006-12-29 KR KR1020087018830A patent/KR101325413B1/ko active IP Right Grant
- 2006-12-29 CN CN200680050010XA patent/CN101351937B/zh not_active Expired - Fee Related
- 2006-12-29 TW TW095149779A patent/TWI331430B/zh not_active IP Right Cessation
- 2006-12-29 US US12/087,331 patent/US8396092B2/en not_active Expired - Fee Related
- 2006-12-29 EP EP06849018A patent/EP1966858B1/de not_active Ceased
- 2006-12-29 JP JP2008547847A patent/JP5232010B2/ja active Active
- 2006-12-29 WO PCT/DE2006/002332 patent/WO2007076841A1/de active Application Filing
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Also Published As
Publication number | Publication date |
---|---|
KR101325413B1 (ko) | 2013-11-04 |
US8396092B2 (en) | 2013-03-12 |
EP1966858B1 (de) | 2011-06-15 |
CN101351937B (zh) | 2012-01-04 |
EP1966858A1 (de) | 2008-09-10 |
WO2007076841A1 (de) | 2007-07-12 |
JP5232010B2 (ja) | 2013-07-10 |
TWI331430B (en) | 2010-10-01 |
KR20080083042A (ko) | 2008-09-12 |
US20090213881A1 (en) | 2009-08-27 |
TW200742212A (en) | 2007-11-01 |
CN101351937A (zh) | 2009-01-21 |
DE102006017294A1 (de) | 2007-07-05 |
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