JP5232011B2 - 光学的にポンピングされる半導体装置の製造方法 - Google Patents
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Description
図1Aは、半導体装置の第1の実施例による、本方法により製造された半導体装置のポンプユニットの概略的な断面図を示す。
図1Bは、第1の実施例による、本方法により製造された半導体装置のポンプユニットの概略的な平面図を示す。
図1Cは、第2の実施例による、本方法により製造された半導体装置の概略的な断面図を示す。
図1Dは、第2の実施例による、本方法により製造された半導体装置の概略的な斜視図を示す。
図1Eは、半導体装置の第1または第2の実施例による、本方法により製造された半導体装置のポンプユニットの概略的な断面図を示す。
図1Fは、第1または第2の実施例による、本方法により製造された半導体装置のポンプユニットの概略的な平面図を示す。
図2Aは、第3の実施例による、本方法により製造された半導体装置のポンプユニットの概略的な斜視図を示す。
図2Bは、本方法により製造された半導体装置の第1の角度での概略的な斜視図を示す。
図2Cは、第3の実施例による、本方法により製造された半導体装置の第2の角度での概略的な斜視図を示す。
図2Dは、第3の実施例による、本方法により製造された半導体装置の概略的な平面図を示す。
図2Eおよび2Fは、第3の実施例による、本方法により製造された半導体装置の種々の方向からの概略的な断面図を示す。
図2Gは、第3の実施例による、受動的な光学素子が実装される前の、本方法により製造された半導体装置のポンプユニットの概略的な断面図を示す。
図2Hは、所属の概略的な平面図を示す。
図3A,3B,3Cおよび3Dは、本方法の実施例による共振器載着体40の製造工程を概略的な平面図で示す。
図3Eは、そのようにして製造された共振器載着体40の概略的な断面図を示す。
図3Fは、そのようにして製造された共振器載着体40の概略的な平面図を示す。
図4A〜4Dは、本方法の実施例に従い実施されるような共振器ミラー31を製造するための製造方法を示す。
図5は、本方法の実施例において使用されるような、マトリクス状に配置されている複数の端子支持体14を有する端子支持体結合体50を示す。
図6Aは、本方法の別の実施例において使用されるような、マトリクス状に配置されている複数の端子支持体14を有する端子支持体結合体50の概略的な平面図を示す。
図6Bは、端子支持体50の裏面の概略的な平面図を示す。
図6Cは、端子支持体50の概略的な断面図を示す。
図6Dは、端子支持体結合体50の端子支持体14の概略的な平面図を示す。
−複数の構成素子をストライプとして1つのステップで実装し、後にパネルと一緒に個別化する、
−プリズムのストライプまたはレンズのストライプを被着する、
−バキュームツールにおいてマトリクス状に自動調整されて装填されている個々の部品を実装する。
Claims (15)
- 光学的にポンピングされる半導体装置の製造方法において、
機械的に固く相互に接続されている複数の端子支持体(14)を有する端子支持体結合体(50)を提供するステップ、ただし、前記端子支持体(14)は前記端子支持体結合体(50)においてマトリクス状に配置されており、
前記端子支持体結合体(50)の各端子支持体(14)上に表面発光型の半導体ボディ(1)をただ1つ配置するステップ、
前記端子支持体結合体(50)の各端子支持体(14)上に同一の端子支持体上に配置されている前記表面発光型の半導体ボディ(1)を光学的にポンピングすることに適しているポンプ放射源(2)をただ1つ配置するステップ、
ポンプ放射を前記半導体ボディ(1)の前記放射通過面(1a)へと偏向させることに適している前記光学素子(7)を、前記半導体ボディ(1)がそれぞれ、該半導体ボディ(1)の実装面においてポンプ放射源(2)と光学素子(7)との間に一直線に配置されるように前記端子支持体結合体(50)の端子支持体(14)上に配置し、その結果、動作時に生成されるポンプ放射は前記半導体ボディ(1)の放射通過面(1a)へと偏向される前に前記半導体ボディ(1)の上方を通過するステップ、
を有することを特徴とする、光学的にポンピングされる半導体装置の製造方法。 - 同種の構成素子の結合体を前記端子支持体結合体(50)上に載置する、請求項1記載の方法。
- 前記端子支持体結合体(50)は2つの主位置合わせマーク(51)を有し、該主位置合わせマークは前記端子支持体結合体の構造化部または位置合わせチップとして構成されている、請求項1または2記載の方法。
- 前記端子支持体結合体(50)の前記端子支持体(14)は少なくとも1つの副位置合わせマーク(15)を有し、該副位置合わせマークは搭載構造体によって形成されている、請求項1から3までのいずれか1項記載の方法。
- 共振器載着体を端子支持体(14)上に配置するステップを有する、請求項1から4までのいずれか1項記載の方法。
- 請求項5記載の方法により製造された光学的にポンピングされる半導体装置用の共振器載着体の製造方法において、
機械的に固く相互に接続されている複数の個別支持体領域(34)を有する支持体結合体(80)を提供するステップと、
共振器ミラー(31)を各個別支持体領域(34)上にただ1つ配置するステップとを有することを特徴とする、共振器載着体の製造方法。 - 放射偏向素子(33)を前記支持体結合体(80)の個別支持体領域(34)上に配置するステップを有する、請求項6記載の方法。
- 前記個別支持体領域(34)は前記支持体結合体(80)においてマトリクス状に配置されている、請求項6または7記載の方法。
- 同種の構成素子の結合体を前記支持体結合体(80)上に載置する、請求項8記載の方法。
- 前記支持体結合体(80)の個別支持体領域(34)上に少なくとも1つの構成素子をボンディングにより固定する、請求項6から9までのいずれか1項記載の方法。
- 電気的に接触可能な構造化された金属層(60)を前記支持体結合体(80)の個別支持体領域(34)上に被着させる、請求項6から10までのいずれか1項記載の方法。
- 各共振器載着体(40)を所属の端子支持体(14)と導電的に接続させる、請求項5から11までのいずれか1項記載の方法。
- 前記構造化された金属層(60)を前記個別支持体領域(34)上に構造化し、
前記構造化された金属層(60)はメアンダ状に形成されているか、または、
前記構造化された金属層(60)は複数の切欠を有し、
前記構造化された金属層(60)はコンタクト個所(61)を用いて前記支持体結合体(80)と電気的に接触される、請求項11記載の方法。 - 前記共振器載着体(40)の温度を、前記構造化された金属層(60)によって高めて求める、請求項13記載の方法。
- 各端子支持体(14)上にそれぞれ1つの温度センサ(9)を取り付け、該温度センサ(9)を用いて前記端子支持体(14)それぞれの平均温度を求め、それぞれの端子支持体(14)の求められた平均温度に依存して、熱電式の冷却器を用いて前記ポンプ放射源(2)の動作温度を調整する、請求項1から14までのいずれか1項記載の方法。
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DE102006017293A DE102006017293A1 (de) | 2005-12-30 | 2006-04-12 | Verfahren zur Herstellung einer optisch pumpbaren Halbleitervorrichtung |
PCT/DE2006/002337 WO2007076845A1 (de) | 2005-12-30 | 2006-12-29 | Vertical emittierender, optisch gepumpter halbleiter mit externem resonator auf separatem substrat |
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DE102008010297A1 (de) | 2008-02-21 | 2009-10-29 | Osram Opto Semiconductors Gmbh | Frequenz-Konversions-Vorrichtung und Verfahren zur Herstellung einer Frequenz-Konversions-Vorrichtung |
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DE102012205513B4 (de) * | 2012-04-04 | 2021-12-09 | Osram Gmbh | Verfahren zum Herstellen einer Strahlungsanordnung und Strahlungsanordnung |
DE102013205594A1 (de) | 2013-03-28 | 2014-10-02 | Osram Opto Semiconductors Gmbh | Laserbauelement und Verfahren zu seiner Herstellung |
JP7166932B2 (ja) * | 2016-12-22 | 2022-11-08 | 古河電気工業株式会社 | 半導体レーザモジュールおよび半導体レーザモジュールの製造方法 |
CN111585165B (zh) * | 2019-02-15 | 2024-06-18 | 日亚化学工业株式会社 | 发光装置的制造方法、发光装置、或基部 |
JP7206494B2 (ja) * | 2019-02-15 | 2023-01-18 | 日亜化学工業株式会社 | 発光装置の製造方法、発光装置 |
CN110289555A (zh) * | 2019-06-21 | 2019-09-27 | 中国科学院半导体研究所 | 半导体激光光源 |
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DE102006017293A1 (de) | 2007-07-05 |
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US8076166B2 (en) | 2011-12-13 |
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