JP2009504913A - 表面活性化剤および選択されたルテニウム錯体を用いるルテニウム含有フィルムの原子層蒸着 - Google Patents

表面活性化剤および選択されたルテニウム錯体を用いるルテニウム含有フィルムの原子層蒸着 Download PDF

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Publication number
JP2009504913A
JP2009504913A JP2008526108A JP2008526108A JP2009504913A JP 2009504913 A JP2009504913 A JP 2009504913A JP 2008526108 A JP2008526108 A JP 2008526108A JP 2008526108 A JP2008526108 A JP 2008526108A JP 2009504913 A JP2009504913 A JP 2009504913A
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JP
Japan
Prior art keywords
ruthenium
represented
independently selected
substrate
precursor
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Abandoned
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JP2008526108A
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English (en)
Japanese (ja)
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JP2009504913A5 (https=
Inventor
トンプソン，ジエフリー・スコツト
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EIDP Inc
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EI Du Pont de Nemours and Co
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Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Publication of JP2009504913A publication Critical patent/JP2009504913A/ja
Publication of JP2009504913A5 publication Critical patent/JP2009504913A5/ja
Abandoned legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
    • H10W20/043—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers for electroplating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45534—Use of auxiliary reactants other than used for contributing to the composition of the main film, e.g. catalysts, activators or scavengers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
JP2008526108A 2005-08-08 2006-08-07 表面活性化剤および選択されたルテニウム錯体を用いるルテニウム含有フィルムの原子層蒸着 Abandoned JP2009504913A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US70649305P 2005-08-08 2005-08-08
PCT/US2006/030712 WO2007019437A1 (en) 2005-08-08 2006-08-07 Atomic layer deposition of ruthenium-containing films using surface-activating agents and selected ruthenium complexes

Publications (2)

Publication Number Publication Date
JP2009504913A true JP2009504913A (ja) 2009-02-05
JP2009504913A5 JP2009504913A5 (https=) 2009-09-24

Family

ID=37113511

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008526108A Abandoned JP2009504913A (ja) 2005-08-08 2006-08-07 表面活性化剤および選択されたルテニウム錯体を用いるルテニウム含有フィルムの原子層蒸着

Country Status (6)

Country Link
US (1) US7632351B2 (https=)
EP (1) EP1913174A1 (https=)
JP (1) JP2009504913A (https=)
KR (1) KR20080038209A (https=)
TW (1) TW200720467A (https=)
WO (1) WO2007019437A1 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008244017A (ja) * 2007-03-26 2008-10-09 Ulvac Japan Ltd 半導体装置の製造方法
KR20150013082A (ko) * 2013-07-26 2015-02-04 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드 휘발성 디하이드로피라지닐 및 디하이드로피라진 금속 착화합물
WO2018088079A1 (ja) * 2016-11-08 2018-05-17 株式会社Adeka 化合物、薄膜形成用原料、薄膜の製造方法及びアミジン化合物

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US20090087339A1 (en) * 2007-09-28 2009-04-02 Asm Japan K.K. METHOD FOR FORMING RUTHENIUM COMPLEX FILM USING Beta-DIKETONE-COORDINATED RUTHENIUM PRECURSOR
US8124528B2 (en) 2008-04-10 2012-02-28 Micron Technology, Inc. Method for forming a ruthenium film
US8163341B2 (en) 2008-11-19 2012-04-24 Micron Technology, Inc. Methods of forming metal-containing structures, and methods of forming germanium-containing structures
WO2010132871A1 (en) 2009-05-15 2010-11-18 Wayne State University Thermally stable volatile film precursors
US9822446B2 (en) 2010-08-24 2017-11-21 Wayne State University Thermally stable volatile precursors
WO2012027357A2 (en) 2010-08-24 2012-03-01 Wayne State University Thermally stable volatile precursors
WO2013006242A1 (en) * 2011-07-06 2013-01-10 Wayne State University Atomic layer deposition of transition metal thin films
TWI551708B (zh) * 2011-07-22 2016-10-01 應用材料股份有限公司 使用金屬前驅物之原子層沉積法
KR101405256B1 (ko) * 2011-09-16 2014-06-10 엠파이어 테크놀로지 디벨롭먼트 엘엘씨 그래핀 결함 변경
WO2013039508A1 (en) 2011-09-16 2013-03-21 Empire Technology Development Llc Alteration of graphene defects
US20130146468A1 (en) * 2011-12-08 2013-06-13 Applied Materials, Inc. Chemical vapor deposition (cvd) of ruthenium films and applications for same
US8907115B2 (en) 2012-12-10 2014-12-09 Wayne State University Synthesis and characterization of first row transition metal complexes containing α-keto hydrazonate ligands as potential precursors for use in metal film deposition
US9758866B2 (en) 2013-02-13 2017-09-12 Wayne State University Synthesis and characterization of first row transition metal complexes containing α-imino alkoxides as precursors for deposition of metal films
US9157149B2 (en) 2013-06-28 2015-10-13 Wayne State University Bis(trimethylsilyl) six-membered ring systems and related compounds as reducing agents for forming layers on a substrate
US9249505B2 (en) 2013-06-28 2016-02-02 Wayne State University Bis(trimethylsilyl) six-membered ring systems and related compounds as reducing agents for forming layers on a substrate
TWI871083B (zh) * 2018-06-27 2025-01-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於形成含金屬材料之循環沉積製程
US10615037B2 (en) * 2018-08-17 2020-04-07 International Business Machines Corporation Tone reversal during EUV pattern transfer using surface active layer assisted selective deposition
US11821070B2 (en) 2019-11-11 2023-11-21 Applied Materials, Inc. Ruthenium film deposition using low valent metal precursors

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ZA752093B (en) * 1975-04-03 1976-03-31 Swarsab Mining The separation and/or purification of precious metals
US6208003B1 (en) * 1997-09-26 2001-03-27 Nippon Steel Corporation Semiconductor structure provided with a polycide interconnection layer having a silicide film formed on a polycrystal silicon film
US6458183B1 (en) * 1999-09-07 2002-10-01 Colonial Metals, Inc. Method for purifying ruthenium and related processes
US7094690B1 (en) * 2000-08-31 2006-08-22 Micron Technology, Inc. Deposition methods and apparatuses providing surface activation
WO2002032839A1 (fr) * 2000-10-18 2002-04-25 Jsr Corporation Film de ruthenium et film d"oxyde de ruthenium, et leur procede de formation
JP2005520053A (ja) * 2002-01-18 2005-07-07 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー 原子層堆積によって銅薄膜を堆積させるための揮発性銅（ｉｉ）錯体
US6824816B2 (en) * 2002-01-29 2004-11-30 Asm International N.V. Process for producing metal thin films by ALD
US7264846B2 (en) * 2002-06-04 2007-09-04 Applied Materials, Inc. Ruthenium layer formation for copper film deposition
WO2004035858A2 (en) 2002-10-15 2004-04-29 Rensselaer Polytechnic Institute Atomic layer deposition of noble metals
US20050085031A1 (en) * 2003-10-15 2005-04-21 Applied Materials, Inc. Heterogeneous activation layers formed by ionic and electroless reactions used for IC interconnect capping layers
US7309658B2 (en) * 2004-11-22 2007-12-18 Intermolecular, Inc. Molecular self-assembly in substrate processing
WO2006115476A2 (en) * 2005-04-21 2006-11-02 Honeywell International Inc. Ruthenium-based materials and ruthenium alloys
US20070054487A1 (en) * 2005-09-06 2007-03-08 Applied Materials, Inc. Atomic layer deposition processes for ruthenium materials
US20070077750A1 (en) * 2005-09-06 2007-04-05 Paul Ma Atomic layer deposition processes for ruthenium materials
US7625814B2 (en) * 2006-03-29 2009-12-01 Asm Nutool, Inc. Filling deep features with conductors in semiconductor manufacturing

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008244017A (ja) * 2007-03-26 2008-10-09 Ulvac Japan Ltd 半導体装置の製造方法
KR20150013082A (ko) * 2013-07-26 2015-02-04 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드 휘발성 디하이드로피라지닐 및 디하이드로피라진 금속 착화합물
KR101659725B1 (ko) 2013-07-26 2016-09-26 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드 휘발성 디하이드로피라지닐 및 디하이드로피라진 금속 착화합물
WO2018088079A1 (ja) * 2016-11-08 2018-05-17 株式会社Adeka 化合物、薄膜形成用原料、薄膜の製造方法及びアミジン化合物
US11161867B2 (en) 2016-11-08 2021-11-02 Adeka Corporation Compound, raw material for forming thin film, method for manufacturing thin film, and amidine compound
US11618762B2 (en) 2016-11-08 2023-04-04 Adeka Corporation Compound, raw material for forming thin film, method for manufacturing thin film, and amidine compound

Also Published As

Publication number Publication date
WO2007019437A1 (en) 2007-02-15
US20070037392A1 (en) 2007-02-15
US7632351B2 (en) 2009-12-15
TW200720467A (en) 2007-06-01
KR20080038209A (ko) 2008-05-02
EP1913174A1 (en) 2008-04-23

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