JP2009280909A - 成膜方法および発光装置の作製方法 - Google Patents

成膜方法および発光装置の作製方法 Download PDF

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JP2009280909A
JP2009280909A JP2009103940A JP2009103940A JP2009280909A JP 2009280909 A JP2009280909 A JP 2009280909A JP 2009103940 A JP2009103940 A JP 2009103940A JP 2009103940 A JP2009103940 A JP 2009103940A JP 2009280909 A JP2009280909 A JP 2009280909A
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substrate
light
layer
film
deposition
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JP2009280909A5 (enExample
Inventor
Koichiro Tanaka
幸一郎 田中
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2009103940A priority Critical patent/JP2009280909A/ja
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Publication of JP2009280909A5 publication Critical patent/JP2009280909A5/ja
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  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2009103940A 2008-04-25 2009-04-22 成膜方法および発光装置の作製方法 Withdrawn JP2009280909A (ja)

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JP2009103940A JP2009280909A (ja) 2008-04-25 2009-04-22 成膜方法および発光装置の作製方法

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JP2008114864 2008-04-25
JP2009103940A JP2009280909A (ja) 2008-04-25 2009-04-22 成膜方法および発光装置の作製方法

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JP2009280909A5 JP2009280909A5 (enExample) 2012-05-31

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010165669A (ja) * 2008-12-15 2010-07-29 Semiconductor Energy Lab Co Ltd 成膜方法及び発光装置の作製方法
CN111549316A (zh) * 2020-06-22 2020-08-18 京东方科技集团股份有限公司 蒸镀用掩膜版

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005191546A (ja) * 2003-12-02 2005-07-14 Semiconductor Energy Lab Co Ltd レーザ照射装置、レーザ照射方法及び半導体装置の作製方法
JP2005210102A (ja) * 2003-12-26 2005-08-04 Semiconductor Energy Lab Co Ltd レーザ照射方法及び結晶質半導体膜の作製方法
JP2005210103A (ja) * 2003-12-26 2005-08-04 Semiconductor Energy Lab Co Ltd レーザ照射装置、レーザ照射方法及び結晶質半導体膜の作製方法
JP2008053698A (ja) * 2006-07-28 2008-03-06 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005191546A (ja) * 2003-12-02 2005-07-14 Semiconductor Energy Lab Co Ltd レーザ照射装置、レーザ照射方法及び半導体装置の作製方法
JP2005210102A (ja) * 2003-12-26 2005-08-04 Semiconductor Energy Lab Co Ltd レーザ照射方法及び結晶質半導体膜の作製方法
JP2005210103A (ja) * 2003-12-26 2005-08-04 Semiconductor Energy Lab Co Ltd レーザ照射装置、レーザ照射方法及び結晶質半導体膜の作製方法
JP2008053698A (ja) * 2006-07-28 2008-03-06 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010165669A (ja) * 2008-12-15 2010-07-29 Semiconductor Energy Lab Co Ltd 成膜方法及び発光装置の作製方法
CN111549316A (zh) * 2020-06-22 2020-08-18 京东方科技集团股份有限公司 蒸镀用掩膜版
CN111549316B (zh) * 2020-06-22 2022-07-15 京东方科技集团股份有限公司 蒸镀用掩膜版

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