JP2009275110A - Resin composition for encapsulating semiconductor and semiconductor device using the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a resin composition for encapsulating semiconductors which imparts excellent marking property in compact semiconductor packages. <P>SOLUTION: The resin composition for encapsulating semiconductors is used as materials for encapsulating semiconductor devices with a size of the following dimension (x) or below. The resin composition for encapsulating semiconductors contains the following components (C)-(E) and also the following components (A) and (B). Where (x) means the length 2 mm×the width 2 mm×the height 1 mm; (A) is a metal hydroxide compound with an average particle size (α) of 1-30 μm; (B) is a crushed type inorganic filler with an average particle size in the range of 0.7α-1.3α μm excluding the component (A) [wherein α represents an average particle size of a metal hydroxide compound which is the component (A)]; (C) is carbon black; (D) is an epoxy resin and (E) is a phenol novolak resin. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a semiconductor sealing resin composition excellent in marking properties on the surface of a package and a semiconductor device formed by sealing a semiconductor element using the same for sealing a small semiconductor package.

  2. Description of the Related Art Conventionally, semiconductor elements such as IC and LSI are resin-sealed using a resin composition to form a semiconductor device. In recent years, electronic devices that have been reduced in size and thickness, such as mobile phones, have been widely used, and accordingly, semiconductor devices themselves that have been downsized are also frequently used. In such a small semiconductor package obtained by resin-sealing using a resin composition, one of important characteristics is a marking property for the package. That is, in recent small packages, it is necessary to mark fine characters with a laser or the like in proportion to the small size.

However, a resin composition that becomes a sealing material considering sealing in a conventional normal size package, for example, an epoxy resin, a phenol resin as a curing agent, carbon black, and a normal inorganic filler are used. In the sealing resin composition (see Patent Document 1), there was no problem with the marking property for the conventional large-sized package, but in the semiconductor package which is further reduced in size, it is small. When the package is marked, there is a problem that the print width becomes large and it is difficult to give a clear marking.
JP 2006-36941 A

  Thus, it is difficult to give a clear desired marking to a small package obtained by resin-sealing using a conventional sealing resin composition. The actual situation is that a sealing material provided is desired.

  The present invention has been made in view of such circumstances, and its object is to provide a semiconductor sealing resin composition capable of imparting excellent marking properties in a small semiconductor package and a semiconductor device using the same. To do.

In order to achieve the above object, the present invention provides a semiconductor sealing resin composition used as a sealing material for a semiconductor device having a size of the following dimension (x) or less, wherein the following (C) to ( A semiconductor sealing resin composition containing the component (E) and further containing the following components (A) and (B) is a first gist.
(X) 2 mm long × 2 mm wide × 1 mm height.
(A) A metal hydroxide compound having an average particle diameter (α) of 1 to 30 μm.
(B) Crushed inorganic filler having an average particle diameter in the range of 0.7α to 1.3α μm excluding the component (A) [where α is the average particle of the metal hydroxide compound as the component (A) Shows the diameter].
(C) Carbon black.
(D) Epoxy resin.
(E) Phenol novolac resin.

Then, the present invention provides a semiconductor device having a size equal to or smaller than the following dimension (x) obtained by sealing a semiconductor element by using the resin composition for semiconductor encapsulation according to the first aspect. And
(X) 2 mm long × 2 mm wide × 1 mm height.

  The inventors of the present invention have made a series of studies in order to obtain a resin composition for encapsulating a semiconductor that can exhibit excellent marking properties when encapsulating a small semiconductor package. And, as a result of examining means for more effectively solving from the viewpoint of completely adjusting the particle size and addition amount of carbon black as appropriate, a metal hydroxide compound having a specific average particle size is so-called. It has been found that the use of a crushed inorganic filler having an average particle size associated with a metal hydroxide compound having a specific average particle size is used as an auxiliary agent for refining marking, and the accuracy of fine marking is improved. Reached.

  Thus, the present invention is a resin composition for encapsulating a semiconductor device having a size equal to or smaller than the specific dimension (x), and a metal hydroxide compound having a specific average particle diameter (component (A)) and A resin composition for semiconductor encapsulation using a crushed inorganic filler [component (B)] having an average particle size related to the average particle size of the metal hydroxide compound and carbon black (component (C)) is there. For this reason, it becomes possible to ensure the excellent marking property with respect to a small package.

  And when the usage ratio of carbon black to the metal hydroxide compound is set to 1 to 20% by weight, the balance between the laser light endothermic effect of carbon black and the thermal decomposition and heat diffusion prevention effect of the metal hydroxide compound is good. Thus, fine marking is possible.

  Next, embodiments of the present invention will be described in detail.

In the present invention, a semiconductor device in which a semiconductor element is resin-sealed is intended to have a size equal to or smaller than the following dimension (x).
(X) 2 mm long × 2 mm wide × 1 mm height.

  And the resin composition for semiconductor sealing of this invention is a specific metal hydroxide compound (A component), the said specific crushed inorganic filler (B component), carbon black (C component), and an epoxy resin. (D component) and a phenol novolak resin (E component) are obtained, and are usually used in the form of a powder or a tablet obtained by tableting this.

  The specific metal hydroxide compound (component A) is a hydroxide or oxide hydrate of metals other than alkali metals and alkaline earth metals. In the present invention, the metal hydroxide compound mainly serves as a marking refinement aid.

  The metal hydroxide compound has lower thermal conductivity than other inorganic fillers, and has the effect of preventing the spread of heat when laser light is absorbed. Moreover, it has the effect | action which accelerates | stimulates the sublimation of the sealing resin layer by dehydration reaction. Further, the temperature in the peripheral area of the laser beam is lowered by the endothermic reaction due to the dehydration reaction of the metal hydroxide compound, the high temperature area is narrowed, and as a result, it becomes a spot shape, so that the print width can be narrowed. That is, when an inorganic filler with high thermal conductivity is used, heat spreads to the periphery, the temperature rise is insufficient, marking performance is lowered, and further, the printing line width is increased. On the other hand, by using the metal hydroxide compound, the volatility of the organic matter is promoted by the release of water from the metal hydroxide compound, and the temperature rise around the focal point of the laser beam is suppressed. At that time, the line width is narrow, and fine characters can be printed.

  The metal hydroxide compound is slightly soluble in water, but the portion irradiated with laser light becomes an oxide, which improves water resistance and prevents ion elution into water. It will be.

  And the said metal hydroxide compound also has an effect | action as a flame retardant with the said effect | action, and contributes also to the flame retardance of sealing resin.

  The average particle size of the metal hydroxide compound must be 1 to 30 μm. More preferably, it is 3-20 micrometers, Most preferably, it is 10-15 micrometers. That is, if the average particle diameter is less than the lower limit, the viscosity of the resin composition increases and fluidity tends to decrease.If the average particle diameter exceeds the upper limit, clogging in the gate portion is caused even in a small semiconductor package. This is because there is a tendency that the wire is deformed by being sandwiched between metal wires. Furthermore, the maximum particle size of the metal hydroxide compound is preferably set to 54 μm or less. This is because the possibility of being caught in the gap of the fluidized portion is reduced by setting such an upper limit value. The average particle size and the maximum particle size can be derived, for example, by using a sample arbitrarily extracted from the population and measuring it using a laser diffraction / scattering particle size distribution measuring apparatus.

  Examples of the metal hydroxide compound include aluminum, gallium, indium, thallium, group 14 lead, semimetal element tin, group 15 semimetal bismuth, and transition metal, which are typical metals of group 13 of the periodic table. Examples include titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, zinc and the like, group 2 alkaline elements beryllium, magnesium, calcium, strontium, barium and the like.

  In particular, among the above metals, since alkaline earth elements such as magnesium are easily dissolved in water, it is preferable to use those whose surfaces are covered with a hydrophobic material. Magnesium has a high water release temperature and is excellent in thermal stability as a hydroxide. However, since the release of water occurs at a high temperature, it is insufficient in terms of flame retardancy. Therefore, the combined use with other metal hydroxide compounds having a low water release temperature is preferable.

  Of the metal hydroxide compounds, aluminum hydroxide is preferably used in consideration of the relatively low water release temperature and the large endothermic amount per unit weight.

  The content of the specific metal hydroxide compound (component A) is preferably set to 5 to 20% by weight, more preferably 7 to 15% by weight, based on the entire resin composition. That is, by setting the content within the above range, a product having an excellent molded appearance can be obtained. And when there is too much said content, it may produce a bubble on the surface of a molding due to the water which generate | occur | produces at the time of shaping | molding. On the other hand, if the content is too small, the flame retardancy tends to decrease.

  Examples of the specific crushed inorganic filler (B component) used together with the A component include crushed silica powder, alumina powder, quartz glass powder, and talc. These may be used alone or in combination of two or more.

  And as said crushed inorganic filler (component B), in applications requiring high thermal conductivity, alumina powder, silica powder, especially crystalline silica powder or crushed powder thereof (hereinafter referred to as “crushed crystal silica powder”). ) Is preferably used. That is, the crushed inorganic filler powder surface has irregularities, and after the resin is thermally volatilized by laser light, the light-scattering irregular surface is exposed on the surface. As a result, the surface looks white and characters can be recognized. Moreover, when making a linear expansion coefficient small, it is preferable to use a fused silica powder. That is, the thermal conductivity is lower than that of crystalline silica powder, which is advantageous for making the line width of the marking with laser light fine.

  The average particle size of the crushed inorganic filler (component B) is 0.7 to 1.3 times the average particle size (α) of the metal hydroxide compound (component A), that is, 0.7α to 1. It is necessary to use one in the range of 3αμm. By using an inorganic filler having an average particle size in such a range, the metal hydroxide compound is uniformly dispersed, and the printing width of the marking by laser light is reduced. Further, the maximum particle size of the crushed inorganic filler (component B) should be 70 μm or less. In the case of a small semiconductor package, the appearance after molding is smooth and smooth, and the inorganic filler to the mold gate part It is particularly preferable because it is possible to obtain an effect of suppressing the occurrence of defective flow due to catching, deformation of the wire by being sandwiched between the wires, and voids in the wire portion. The average particle size and the maximum particle size can be derived, for example, by using a sample arbitrarily extracted from the population and measuring it using a laser diffraction / scattering particle size distribution measuring apparatus, as described above. .

  And it is preferable to set content of the said crushed inorganic filler (B component) in the range of 60 to 80 weight% of the whole resin composition. Furthermore, it is preferable that the total content of the inorganic material including the specific metal hydroxide compound (component A) and the inorganic material such as carbon black is set in the range of 70 to 85% by weight of the entire resin composition. . Thus, by setting so that the whole inorganic substance may become the said range, it is excellent in the mechanical strength of resin, and fluidity | liquidity etc. become favorable. That is, if the content of the entire inorganic material is too small, there is a tendency to cause problems such as a decrease in mechanical strength and the generation of stress due to an increase in the linear expansion coefficient. This is because the tendency to do is seen. Thus, the more crushed inorganic filler (component B) is more excellent in flame retardancy and the coefficient of linear expansion becomes lower, resulting in lower stress of the molded product, for example, applying unnecessary force to the semiconductor element. Therefore, peeling at the interface between the semiconductor element and the lead frame and the sealing resin is less likely to occur. However, when there are too many inorganic materials, the viscosity of a resin composition will rise and moldability will fall. In particular, in the case of a small semiconductor package such as the present invention, not only the height of the flow path but also the flow path width is narrowed in the mold, so that the amount of inorganic material is less than that used for a large semiconductor package. Things are used.

  In addition, as said specific metal hydroxide compound (A component) and said specific crushed inorganic filler (B component), the powder which becomes 90 weight% or more in each component is the relationship of the above-mentioned average particle diameter. As long as the remaining amount is less than 10% by weight, those having an average particle diameter in the other range may be used. For example, in order to improve the filling rate and fluidity of the inorganic filler of the resin composition, an inorganic filler having a finer average particle diameter can be used to fill the gaps between the particles.

  Carbon black (C component) used together with the above A component and B component has conductivity and can be used not only for countermeasures against static electricity, but also prevents light transmission and prevents malfunction of semiconductor elements due to light. . Furthermore, the light by a laser beam is absorbed efficiently and the temperature of the surrounding resin composition is raised in a spot manner. For this reason, the organic component of the part decomposes | disassembles with a heat | fever, volatilizes, and only a crushed inorganic filler (B component) will be exposed on the surface, and character recognition is attained by scattering of light.

Regarding the light absorptivity such as laser light used for marking, the average particle diameter of the carbon black (component C) and its aggregation state are important factors. Therefore, the average particle size of the carbon black (component C) used in the present invention is 20 to 30 nm in terms of primary particle size, and the specific surface area is 100 to 120 m ² / g and the DBP absorption is 90 as characteristics indicating the aggregation state. ~130cm ³ / 100g, it is preferable to use a pH of 7-9. When the primary particle size and the aggregated state (normally, secondary aggregation proceeds when the DBP absorption amount is large), light is effectively absorbed, and marking with laser light can be performed efficiently. .

  The primary particle size of the carbon black (component C) is usually obtained by observing with an electron microscope and arithmetic averaging, since the primary particles themselves are fine.

  The specific surface area can be determined from the nitrogen adsorption amount according to JIS K 6217. However, when the particle diameter is small, the specific surface area has a large value and can be said to have a correlation with the particle diameter.

  The DBP absorption amount is the amount of dibutyl phthalate (DBP) absorbed per 100 g of carbon black, and is determined according to JIS K 6221. That is, a large value indicates that a secondary structure in which primary particles are aggregated is developed.

  The pH value is the value of the carbon black distilled water dispersion. By setting the pH within the above range, elution of ionic impurities hardly occurs without inhibiting the curing reaction of the epoxy resin and the phenol novolac resin. It can be said.

  The content of the carbon black (component C) is preferably set to 0.3 to 1.0% by weight of the entire resin composition. That is, by setting within this range, the laser light is easily absorbed and the fluidity of the resin composition is good.

  Furthermore, it is preferable to set the usage ratio of the carbon black (C component) to the specific metal hydroxide compound (A component) to be 1 to 20% by weight. Particularly preferred is 3 to 10% by weight. That is, by setting in the above range, the balance between heat absorption, heat conduction, and thermal decomposition becomes good, and fine marking becomes possible.

  Examples of the epoxy resin (D component) used together with the A to C components include various epoxy resins such as cresol novolac type epoxy resin, phenol novolac type epoxy resin, bisphenol A type epoxy resin, biphenyl type epoxy resin, and brominated epoxy. Examples thereof include resins. These may be used alone or in combination of two or more. Especially, it is preferable to use the thing of the range whose epoxy equivalent is 185-205 from the point of a moldability, More preferably, it is 192-199. That is, if the epoxy equivalent is less than the lower limit, the fluidity is lowered, and if it exceeds the upper limit, the curability tends to be lowered. Furthermore, it is preferable to use a resin having a softening point in the range of 50 to 80 ° C., more preferably 60 to 75 ° C., from the viewpoint of the handleability and moldability of the resin. That is, if the softening point is too low, the resin composition tends to be blocked, and if the softening point is too high, the fluidity of the resin composition tends to decrease. Specifically, it is particularly preferable to use a cresol novolac type epoxy resin having an epoxy equivalent and a softening point in the above range.

  The phenol novolac resin (component E) used together with the epoxy resin (component D) is obtained by reacting a compound having a phenolic hydroxyl group such as phenol or naphthol with an aldehyde, ketone or the like in an acidic atmosphere. In a broad sense, a phenol aralkyl resin obtained by reacting a phenol compound with an aromatic compound having a methoxymethylene group or the like is also included.

  In the present invention, since the semiconductor device to be sealed is a small package having the dimension (x), it is important to increase the crosslinking density of the resin, and a novolak type phenol formaldehyde resin having a low phenolic hydroxyl group equivalent Is preferably used. If the phenolic hydroxyl group equivalent is low, even if it has a low molecular weight, it will have 3 or more phenolic hydroxyl groups, so that the resin composition can be obtained using a low molecular weight compound without greatly deteriorating the cured product properties. It is also possible to reduce the viscosity of the resin and ensure the fluidity of the resin.

  As said phenol novolak resin (E component), it is preferable to use the thing of 100-200 phenolic hydroxyl equivalent, and it is preferable to use the thing of 100-150 especially from a sclerosing | hardenable viewpoint. The softening point is preferably 50 to 110 ° C.

  The phenol novolac resin (component E) is not limited to the phenol novolac resin having the physical properties described above, and other phenol novolac resins can be used if necessary. Can also be used together.

  Moreover, the usage-amount of the said phenol novolak resin (E component) is 0.5-2.0 equivalent in the hydroxyl equivalent in a phenol novolak resin (E component) per 1 equivalent of epoxy groups in the said epoxy resin (D component). It is preferable to mix | blend so that it may become. More preferably, it is 0.8-1.2 equivalent.

  In the semiconductor sealing resin composition of the present invention, in addition to the components A to E, a curing accelerator, a silane coupling agent, a flame retardant, a flame retardant aid, a release agent, and the like are appropriately added as necessary. Can be used.

  As said hardening accelerator, the hardening accelerator which shows basicity is used suitably, for example. That is, when a basic curing accelerator is used, an acidic mold release agent has an effect of protecting the basic curing accelerator, and thus has the effect of improving the storage stability of the resin composition and improving the fluidity of the resin.

  As such a basic curing accelerator, for example, an imidazole compound, a tertiary amine compound and the like are preferably used. Specifically, 2-ethyl-4-methylimidazole, 2-methylimidazole, 1,8-diazabicyclo [5.4.0] undecene-7, 1,5-diazabicyclo [4.3.0] nonene-5. Etc. can be illustrated. In addition, examples of other curing accelerators include phosphorus triarylphosphine and tetraarylphosphine boron salt. These curing accelerators can be used alone or in combination of two or more.

  The blending amount of the curing accelerator is preferably set to a ratio of 1 to 10 parts by weight with respect to 100 parts by weight of the phenol novolac resin. Particularly preferred is 2 to 5 parts by weight. By setting to the said range, the thing excellent in both sclerosis | hardenability and storage stability comes to be obtained.

  Examples of the silane coupling agent include a functional group that reacts with at least one of an epoxy resin (D component) and a phenol novolac resin (E component) and an alkoxysilane skeleton. For example, γ-mercaptopropyltrimethylsilane, γ -Aminopropyltrimethylsilane, γ-glycidoxypropyltrimethylsilane and the like.

  Examples of the flame retardant include bromine-based flame retardant, nitrogen-based flame retardant, and phosphorus-based flame retardant. And these can be used together with the above-mentioned specific metal hydroxide compound (A component).

  Examples of the flame retardant aid include antimony trioxide and the like, and exhibit an excellent flame retardant effect when used in combination with a bromine-based compound.

  Examples of the release agent include oxidized polyethylene wax, oxidized paraffin wax, montanic acid wax, oxidized crystallin wax, carnauba wax, and the like. These may be used alone or in combination of two or more. Among these, it is preferable to use an oxide of high-density polyethylene obtained by a low-pressure manufacturing method from the viewpoint that there are few branches, excellent releasability, and a wide variety of molecular weights can be appropriately designed.

  Furthermore, when such a resin composition is used as a sealing material, corrosion of the metal due to ionic impurities occurs. Therefore, an ion exchanger can be added to suppress the occurrence of metal corrosion due to ionic impurities. It is done. Examples of such ion exchangers include inorganic hydrotalcite compounds and bismuth compounds.

  The resin composition for semiconductor encapsulation of the present invention can be produced, for example, as follows. That is, the components A to E and, if necessary, other additives such as a curing accelerator, a silane coupling agent, a flame retardant, a flame retardant aid, and a release agent are blended in a predetermined ratio. Next, these are melted and kneaded in a heated state using a kneader such as a mixing roll machine, cooled, and then pulverized by known means, and tableted as necessary in a tablet form. The target epoxy resin composition can be produced.

  The sealing of the semiconductor element using such an epoxy resin composition is not particularly limited, and can be performed by a known molding method such as ordinary transfer molding.

In the present invention, as described above, as a semiconductor device obtained by sealing a semiconductor element using a resin composition for semiconductor sealing, a semiconductor device having a size equal to or smaller than the following dimension (x) is used. It is intended.
(X) 2 mm long × 2 mm wide × 1 mm height.
That is, in a small semiconductor package using a conventional sealing material, the resin composition for semiconductor encapsulation of the present invention is used for resin sealing of a small semiconductor package having a size equal to or smaller than the dimension (x). It was difficult to remove the formed burrs, and a sealing resin portion excellent in mechanical strength, moldability, storage stability and flame retardancy was formed.

  Carbon dioxide laser markers, YAG laser markers, and the like are widely used as laser marking devices used for marking the obtained small semiconductor packages. Also, there are various laser spot diameters, but the heat to the surroundings spreads and printing is performed wider than the laser spot diameter. An extremely fine one is about 1 μm in diameter, but generally about 2 μm is often used. The smaller the package size, the smaller the printable area proportionally. Therefore, it is necessary to reduce the line width, and the laser spot diameter is appropriately set according to the package size.

  Next, examples will be described together with comparative examples. However, the present invention is not limited to these examples.

  Each component shown below was prepared.

〔Epoxy resin〕
o-Cresol novolac type epoxy resin (epoxy equivalent 198, softening point 55 ° C.)

[Phenolic resin]
Phenol formaldehyde novolak resin (hydroxyl equivalent 105, softening point 71 ° C)

[Inorganic filler a]
Crushed fused silica powder (average particle size 14μm, maximum particle size 64μm)
[Inorganic filler b]
Crushed fused silica powder (average particle size 6μm, maximum particle size 35μm)
[Inorganic filler c]
Spherical fused silica powder (average particle size 1 μm, maximum particle size 6 μm)

[Aluminum hydroxide a]
Average particle size 12μm, maximum particle size 80μm
[Aluminum hydroxide b]
Average particle size 8μm, maximum particle size 60μm
[Aluminum hydroxide c]
Average particle size 5μm, maximum particle size 45μm
[Magnesium hydroxide a]
Average particle size 4μm, maximum particle size 40μm
[Magnesium hydroxide b]
Average particle size 0.8μm, maximum particle size 30μm

[Pigment]
Carbon black (average particle size 25 nm, a nitrogen adsorption specific surface area 120m ² / g, DBP adsorption of 120cm ³ / 100g, pH8)

[Curing accelerator]
1,8-diazabicyclo [5.4.0] undecene-7 (DBU)

[Examples 1-7, Comparative Examples 1-4]
By blending the components shown above in the proportions shown in Tables 1 and 2 below and performing melt kneading for 5 minutes on a roll kneader heated to 80 to 120 ° C., inorganic fillers, metal hydroxide compounds, and the like Produced an epoxy resin composition dispersed in the resin. Next, after cooling the melt, the solid was pulverized into a powder. Next, the obtained powder was filled into a cylindrical mold and pressurized from both ends of the cylinder to prepare a columnar tablet-shaped epoxy resin composition.

  Using the tablet-like epoxy resin compositions of Examples and Comparative Examples thus obtained, using a low-pressure transfer molding machine, the molding temperature was 175 ° C., the injection pressure was 7 MPa, and the curing time was 120 seconds. An 8-pin molded product (semiconductor device) having a size of × 2 mm × thickness 0.7 mm was produced. Next, it removed from the metal mold | die and the test piece was produced by performing postcure at 175 degreeC x 5 hours. And using this, about the laser marking property, it measured and evaluated in accordance with the following method. The results are also shown in Tables 1 and 2 below.

[Laser marking properties]
A 10 mm straight line was printed on the surface of the test piece with a laser printer (Keyence Corporation, MD-V9610A) with a width of 5 μm. Then, the printed surface was observed with a microscope, the linearity of the printed matter was confirmed, and the case where irregularities with a line width of 1 μm or more were confirmed was indicated as x, and the others were indicated as ○. Further, in contrast to the above-mentioned ones having a line width of 1 μm or more, those having a laser printing width exceeding 7 μm were indicated as “XΔ”, and those having an unclear laser printing surface were indicated as “X”.

  From the above results, good results were obtained with respect to the laser marking properties of the example products in which the correlation between the average particle diameters of the inorganic filler and the metal hydroxide compound was within the above range.

  On the other hand, the correlation between the average particle diameter of the inorganic filler and aluminum hydroxide is a product of Comparative Examples 1 and 2 in which the correlation is outside the above range, and magnesium hydroxide having an average particle diameter outside the specific range of the average particle diameter. The comparative example 3 product which mix | blended and also the comparative example 4 product which did not mix | blend the metal hydroxide compound resulted in inferior laser marking property.

Claims (5)

A resin composition for encapsulating a semiconductor used as an encapsulating material for a semiconductor device having a size of the following dimension (x) or less, containing the following components (C) to (E), and further comprising the following ( A resin composition for encapsulating a semiconductor comprising the component (A) and the component (B).
(X) 2 mm long × 2 mm wide × 1 mm height.
(A) A metal hydroxide compound having an average particle diameter (α) of 1 to 30 μm.
(B) Crushed inorganic filler having an average particle diameter in the range of 0.7α to 1.3α μm excluding the component (A) [where α is the average particle of the metal hydroxide compound as the component (A) Shows the diameter].
(C) Carbon black.
(D) Epoxy resin.
(E) Phenol novolac resin.   The resin composition for semiconductor encapsulation according to claim 1, wherein the metal hydroxide compound (A) is aluminum hydroxide.   The resin composition for semiconductor encapsulation according to claim 1 or 2, wherein the (B) crushed inorganic filler is fused crushed silica.   The resin composition for semiconductor encapsulation according to any one of claims 1 to 3, wherein a ratio of (C) carbon black to (A) metal hydroxide compound is 1 to 20% by weight. The semiconductor device of the magnitude | size below the following dimension (x) formed by sealing a semiconductor element using the resin composition for semiconductor sealing as described in any one of Claims 1-4.
(X) 2 mm long × 2 mm wide × 1 mm height.