JP5038972B2 - Semiconductor sealing resin composition, method for producing the same, and semiconductor device using the same - Google Patents

Description

  The present invention relates to a resin composition for semiconductor encapsulation excellent in reliability such as fluidity, releasability and flame retardancy in a sealing application for a small semiconductor package, a method for producing the same, and a semiconductor element using the same. The present invention relates to a sealed semiconductor device.

  2. Description of the Related Art Conventionally, semiconductor elements such as IC and LSI are resin-sealed using a resin composition to form a semiconductor device. In recent years, electronic devices that have been reduced in size and thickness, such as mobile phones, have been widely used, and accordingly, semiconductor devices themselves that have been downsized are also frequently used. An important characteristic when encapsulating such a small semiconductor package with a resin composition is package formability. For example, since a semiconductor package is a small product, since a large number of packages are usually molded with the same mold, a good cycle and a possibility of a molding cycle in a short time are required.

  However, in order to improve the fluidity, for example, when a low molecular weight resin is used, the curability is lowered. Therefore, in order to increase the curability, the blending amount of the curing accelerator is increased or the amount of the resin is increased. Although it is conceivable to increase the functionality, this time, there arises a problem that the storage stability of the resin composition as the sealing material is lowered. As described above, when the fluidity is insufficient or the mechanical strength is low, in a small package, there is a problem in that corner chipping, insufficient filling of a sealing material, and the like increase relative to the package size. It was.

  Also, if the thickness of the package itself is reduced like a small package, the thickness of the burr formed at the time of molding becomes relatively large with respect to the thickness of the package. As a result, a large force is applied when removing the burr, and the burr is removed. In some cases, the part is torn off to form a deep recess, or the package may be chipped. If the mechanical strength is extremely high, interface peeling between the lead frame and the sealing resin portion occurs, and there is a problem that the electrical reliability of the semiconductor device is lowered.

  On the other hand, in semiconductor devices, flame retardancy is also required, and in order to impart the above flame retardancy, conventionally, various flame retardants have been blended into sealing materials. From such viewpoints, there is a demand for imparting flame retardancy by using a flame retardant that does not contain halogen atoms or toxic elements. For example, the use of a metal hydroxide compound has attracted attention.

However, since the use of the metal hydroxide compound has an adverse effect on curability in the resin composition for semiconductor encapsulation, for example, the metal hydroxide compound is mixed with other inorganic fillers in advance, It has been proposed to improve the curability by using a curing accelerator such as a compound or a diazabicycloalkene compound (see Patent Document 1).
JP 2006-241411 A

  However, the method as described in Patent Document 1 has a certain degree of effectiveness for a conventional large-sized package, but sufficient hardening is achieved in a semiconductor package with a smaller size. It's hard to say that it has the nature.

The present invention has been made in view of such circumstances, and is a semiconductor that is excellent in fluidity-based moldability, flame retardancy, and releasability in a small semiconductor package, and also excellent in storage stability and burr removal. The object is to provide a sealing resin composition, a method for producing the same, and a semiconductor device using the same.

In order to achieve the above object, the present invention provides a semiconductor sealing resin composition used as a sealing material for a semiconductor device having a size of the following dimension (x) or less, and includes the following (A) to ( The resin composition for semiconductor encapsulation using the component D) is the first gist.
(X) 2 mm long × 2 mm wide × 1 mm height.
(A) Aluminum hydroxide having a specific surface area of 1 to ² m ² / g.
(B) An inorganic filler other than the component (A).
(C) Epoxy resin.
(D) A melt mixture obtained by melt-mixing a phenol novolac resin and the following release agent (d).
(D) An oxidized polyethylene wax having an acid value of 55 to 95 and a weight average molecular weight of 2000 to 6000.

  And this invention is a manufacturing method of the resin composition for semiconductor sealing used as a sealing material of the semiconductor device of the magnitude | size below the said dimension (x), Comprising: A phenol novolak resin and the said mold release agent ( The second gist is a method for producing a resin composition for semiconductor encapsulation in which a melt mixture is prepared by melt-mixing d) and then the melt mixture and the components (A) to (C) are melt-kneaded.

Further, the present invention provides a semiconductor device having a size equal to or smaller than the following dimension (x) obtained by encapsulating a semiconductor element using the semiconductor sealing resin composition of the first aspect. And
(X) 2 mm long × 2 mm wide × 1 mm height.

  In order to obtain an epoxy resin composition for semiconductor encapsulation that is excellent in removing burrs generated when sealing a small semiconductor package and excellent in moldability, storage stability, and flame retardancy. A series of research was repeated. As a result, in order to improve moldability and storage stability, the above-mentioned specific metal hydroxide compound and specific release agent are used, and instead of simply blending each component as in the past, A phenol novolac resin and a specific release agent were previously melt-mixed to prepare a melt mixture, and it was found that using this melt mixture and other blending components was effective. That is, by melting and mixing the phenol novolac resin and the specific release agent, the phenolic hydroxyl group in the phenol novolac resin is prevented from interacting with the hydroxyl group of the metal hydroxide compound. In addition, since the release agent with high acidity preferentially interacts with the metal hydroxide compound, the reactivity of the phenol novolac resin does not decrease, and the reactivity between the phenol novolac resin and the epoxy resin is hardly hindered. It becomes possible to suppress the fall of property. Furthermore, since the release agent is finely dispersed in the phenol novolac resin, it is easy to uniformly contact the metal hydroxide compound, the homogeneity of the resin composition is maintained, and the fluidity of the metal hydroxide compound is improved. As a result, the moldability is improved. For this reason, the present inventors have found that it is easy to remove the formed burrs and that excellent reliability, moldability at the time of resin sealing, and storage stability can be obtained.

As described above, the present invention is a resin composition for encapsulating a semiconductor device having a specific dimension (x) or less, and includes aluminum hydroxide (component (A)) having a specific specific surface area and phenol. It is a resin composition for semiconductor encapsulation using a molten mixture [component (D)] obtained by melt-mixing a novolak resin and a specific release agent. For this reason, it is possible to obtain a highly reliable semiconductor device that has excellent releasability and flame retardancy without causing deterioration in moldability and storage stability, and facilitates removal of generated burrs. it can.

As the specific release agent, because the use of oxidized polyethylene wax, excellent releasability, many packages such as small packages molded even in the case of molding at one time, the adhesion of the resin composition to the mold effectively Can be suppressed.

Moreover, when the use ratio of the specific release agent with respect to the aluminum hydroxide is set to 3 to 10% by weight, the mold release property is excellent and the dispersibility of the aluminum hydroxide in the resin composition is improved. Adhesion with the components is also maintained, and desorption and elution with water are suppressed.

Such a resin composition for encapsulating a semiconductor is prepared by previously melting and mixing a phenol novolak resin and a specific release agent to prepare a molten mixture, and then mixing the molten mixture with a specific aluminum hydroxide [(A) component ], An inorganic filler [component (B)] and an epoxy resin [component (C)] are melt-kneaded. For this reason, the interaction between the phenolic hydroxyl group of the phenol novolac resin and the hydroxyl group of aluminum hydroxide is suppressed, the reactivity of the phenol novolac resin is not decreased, and the decrease in curability can be suppressed. Therefore, a sealing material having an excellent balance of moldability, storage stability and curability can be obtained.

  Next, embodiments of the present invention will be described in detail.

In the present invention, a semiconductor device in which a semiconductor element is resin-sealed is intended to have a size equal to or smaller than the following dimension (x).
(X) 2 mm long × 2 mm wide × 1 mm height.

And the resin composition for semiconductor encapsulation of this invention is a specific aluminum hydroxide (A component), inorganic fillers (B component) other than the said A component, an epoxy resin (C component), and a phenol novolak resin. And a specific release agent (d) are melt-mixed to obtain a melt mixture (component D), which is usually used in the form of a powder or a tablet obtained by compressing it.

The specific surface area of the aluminum hydroxide must be 1-2 m ² / g. That is, by setting the specific surface area within the above range, it is possible to prevent the curability from being lowered and to have excellent flame retardancy. The said specific surface area can be calculated | required, for example using a nitrogen adsorption method (BET method), and can be measured using the measuring apparatus according to JIS-Z-8830.

Moreover, it is preferable that the average particle diameter of the said aluminum hydroxide is 1-30 micrometers. More preferably, it is 3-20 micrometers, Most preferably, it is 10-15 micrometers. That is, if the average particle diameter is less than the lower limit, the viscosity of the resin composition increases and fluidity tends to decrease.If the average particle diameter exceeds the upper limit, clogging in the gate portion is caused even in a small semiconductor package. This is because there is a tendency that the wire is deformed by being sandwiched between metal wires. Furthermore, the maximum particle size of the metal hydroxide compound is preferably set to 100 μm or less. This is because the possibility of being caught in the gap of the fluidized portion is reduced by setting such an upper limit value. The average particle size and the maximum particle size can be derived, for example, by using a sample arbitrarily extracted from the population and measuring it using a laser diffraction / scattering particle size distribution measuring apparatus.

Aluminum hydroxide reduces the curability of a curing agent having an acid resistance, even curing agent having a phenolic hydroxyl group, but the effect can be seen, the specific range of the specific surface area as described above By setting such a small value, it is possible to reduce the influence on the curability.

The specific surface area affects the water release rate during the combustion of aluminum hydroxide. The larger the specific surface area, the easier the water release occurs, and the lowering of the temperature and the blocking of air are performed efficiently. Flammability is improved. However, when the specific surface area is increased, the viscosity of the resin composition is increased and the fluidity is lowered, so that problems during molding such as poor filling are likely to occur. As a result of taking such points into consideration, by setting the specific surface area within the specific range, a balance between flame retardancy and moldability is achieved.

The discharge temperature of the water is relatively low, taking into account the fact that the heat absorption amount per unit weight is large, aluminum hydroxide.

The aluminum hydroxide is softer than an inorganic filler that is a metal oxide such as silica powder that is generally used, and has an effect of deforming and closing the flow path when sandwiched between gaps between mold surfaces. For this reason, the length of the generated burr is shortened and a large amount of aluminum hydroxide is present on the die mating surface. Therefore, since the mechanical strength of the burrs is reduced, the burrs can be efficiently removed, and only the resin component is filtered to reduce the filler content in the burrs. Removal is easy.

The content of the specific aluminum hydroxide (component A) is preferably set to 5 to 20% by weight, more preferably 7 to 15% by weight, based on the entire resin composition. That is, by setting the content within the above range, a product having an excellent molded appearance can be obtained. And when there is too much said content, it may produce a bubble on the surface of a molding due to the water which generate | occur | produces at the time of shaping | molding. On the other hand, if the content is too small, the flame retardancy tends to decrease.

  Examples of inorganic fillers (component B) other than the component A used together with the component A include silica powder, alumina powder, quartz glass powder, and talc. These may be used alone or in combination of two or more.

  As the inorganic filler (component B), in applications that require high thermal conductivity, alumina powder, silica powder, especially crystalline silica powder or crushed powder thereof (hereinafter referred to as “crushed crystal silica powder”) is used. It is preferable to use it. Furthermore, in order to improve the fluidity | liquidity of resin, it is still more preferable to use what removed the grinding | polishing corner of the powder. On the other hand, for the purpose of lowering the linear expansion coefficient, it is preferable to use silica powder that has been melted and made amorphous (hereinafter referred to as “fused silica powder”). And when improving the fluidity | liquidity of resin, the crystalline silica powder sprayed in a flame and fuse | melted and made spherical is used preferably.

  The average particle size of the inorganic filler (component B) is preferably 5 to 30 μm, particularly preferably 5 to 25 μm. That is, if the average particle size is less than the lower limit value, the fluidity of the resin composition decreases, and if it exceeds the upper limit value, clogging at the mold gate due to particles having a large particle size tends to occur. is there. Furthermore, the maximum particle size should be 64 μm or less. In the case of small semiconductor packages, the appearance after molding is excellent and smooth, poor flow due to the trapping of the inorganic filler on the mold gate, and sandwiched between wires It is particularly preferable because the effect of suppressing the occurrence of deformation of the wire due to the wire and voids in the wire portion is obtained. In the present invention, the average particle size and the maximum particle size can be derived, for example, by using a sample arbitrarily extracted from the population and measuring it using a laser diffraction / scattering particle size distribution analyzer. .

  And it is preferable to set content of the said inorganic filler (B component) in the range of 60 to 80 weight% of the whole resin composition. Furthermore, it is preferable that the total content of the inorganic material including the specific metal hydroxide compound (component A) and the inorganic material such as carbon black is set in the range of 70 to 85% by weight of the entire resin composition. . Thus, by setting so that the whole inorganic substance may become the said range, it is excellent in the mechanical strength of resin, and fluidity | liquidity etc. become favorable. That is, if the content of the entire inorganic material is too small, there is a tendency to cause problems such as a decrease in mechanical strength and the generation of stress due to an increase in the linear expansion coefficient. If the content is too large, the viscosity increases and the moldability decreases. This is because the tendency to do is seen. Thus, the more inorganic filler (B component) is superior in flame retardancy and the linear expansion coefficient and the like are low, so the stress of the molded product is low, for example, unnecessary force is applied to the semiconductor element, Separation at the interface between the semiconductor element and the lead frame and the sealing resin hardly occurs. However, when there are too many inorganic materials, the viscosity of a resin composition will rise and moldability will fall. In particular, in the case of a small semiconductor package such as the present invention, not only the height of the flow path but also the flow path width is narrowed in the mold, so that the amount of inorganic material is less than that used for a large semiconductor package. Things are used.

Examples of the epoxy resin (C component) used together with the A component and the B component include various epoxy resins such as cresol novolac type epoxy resin, phenol novolac type epoxy resin, bisphenol A type epoxy resin, biphenyl type epoxy resin, and bromination. An epoxy resin etc. are mention | raise | lifted. These may be used alone or in combination of two or more. Especially, it is preferable to use the thing of the range whose epoxy equivalent is 185-205 from the point of a moldability, More preferably, it is 190-200. That is, if the epoxy equivalent is less than the lower limit, the fluidity is lowered, and if it exceeds the upper limit, the curability tends to be lowered. Furthermore, it is preferable to use a softening point in the range of 50 to 80 ° C., more preferably 55 to 75 ° C., from the viewpoint of the handleability and moldability of the resin. That is, if the softening point is too low, the resin composition tends to be blocked, and if the softening point is too high, the fluidity of the resin composition tends to decrease. Specifically, it is particularly preferable to use a cresol novolac type epoxy resin having an epoxy equivalent and a softening point in the above range.

  A molten mixture (component D), which is used together with the epoxy resin (component C) and melt-mixed with a phenol novolac resin and a specific release agent (d), is a phenol novolac resin and a specific release agent (d). Were prepared and melted and mixed in advance. The phenol novolac resin is obtained by reacting a compound having a phenolic hydroxyl group such as phenol or naphthol with an aldehyde, a ketone, or the like in an acidic atmosphere. In a broad sense, a phenol compound and a methoxymethylene group, etc. The phenol aralkyl resin obtained by making it react with the aromatic compound which has this is also included.

  In the present invention, since the semiconductor device to be sealed is a small package having the dimension (x), it is important to increase the crosslinking density of the resin, and a novolak type phenol formaldehyde resin having a low phenolic hydroxyl group equivalent Is preferably used. If the phenolic hydroxyl group equivalent is low, even if it has a low molecular weight, it will have 3 or more phenolic hydroxyl groups, so that the resin composition can be obtained using a low molecular weight compound without greatly deteriorating the cured product properties. It is also possible to reduce the viscosity of the resin and ensure the fluidity of the resin.

  As said phenol novolak resin, it is preferable to use the thing of 100-200 phenolic hydroxyl equivalent, and it is preferable to use the thing of 100-150 especially from a sclerosing | hardenable viewpoint. The softening point is preferably 50 to 110 ° C.

  The phenol novolac resin is not limited to the phenol novolac resin having the physical properties described above, and other phenol novolac resins can be used or used together if necessary.

  Moreover, the usage-amount of the said phenol novolak resin is mix | blended so that the hydroxyl equivalent in a phenol novolak resin may be 0.5-2.0 equivalent per 1 equivalent of epoxy groups in the said epoxy resin (C component). preferable. More preferably, it is 0.8-1.2 equivalent.

The specific release agent (d) has an acid value of 55 to 95 and a weight average molecular weight of 2000 to 6000, and preferably has an acid value of 60 to 80 and a weight average molecular weight of 3000 to 5000. By providing the acid value and the weight average molecular weight, there is an effect that the releasability and fluidity are excellent. Such release agent, polyethylene oxide wax is Ru is used. In kana, it is an oxide of a high density polyethylene obtained by a low-pressure process, few branches, excellent releasability, from the viewpoint of being able to appropriately wide design change molecular weight. In addition, the said weight average molecular weight can be calculated | required as a value converted into the standard polystyrene molecular weight, for example using gel permeation chromatography (GPC).

  The acid value (AV) is the weight (mg) of potassium hydroxide required to neutralize the carboxylic acid in 1 g of the release agent.

The release agent having an acidic group not only improves the fluidity of aluminum hydroxide , but also melts and mixes with a phenol novolac resin in advance, so that the phenolic hydroxyl group having weak acidity is a metal hydroxyl group of aluminum hydroxide. It has the effect of suppressing the interaction. Since the release agent with high acidity preferentially interacts with aluminum hydroxide , the reactivity of the phenol novolac resin is not lowered and the reaction between the phenol novolac resin and the epoxy resin is hardly inhibited. .

Furthermore, since the acidic release agent is finely dispersed in the phenol novolac resin, it is easy to uniformly contact the aluminum hydroxide , and the homogeneity of the resin composition is maintained. And since carboxylic acid is easy to form a dimerized hydrogen bond, it is highly likely that hydrophobic fine particles in which carboxylic acid is confined are formed by melting and mixing in a phenol novolac resin. For this reason, the reaction between the epoxy resin and the carboxylic acid is also suppressed, and the storage stability of the resin is maintained.

It is preferable to set the usage-amount of the said specific mold release agent (d) in the range of 3 to 10 weight% with respect to the said aluminum hydroxide (A component). Particularly preferably, it is set to 5 to 10% by weight. That is, if the amount used is too small, the releasability tends to decrease, and if the amount is too large, the mechanical strength of the cured product tends to decrease and the water extract tends to increase. Because it is.

  Moreover, it is preferable to set the usage-amount of the said specific mold release agent (d) to the range of 5-30 weight% with respect to the said phenol novolak resin. Particularly preferably, it is set to 10 to 25% by weight. That is, if the amount used is too small, the viscosity of the molten mixture is less likely to decrease, and the workability of mixing with the inorganic filler tends to deteriorate. If the amount used is too large, the release agent is separated. This is because a release agent phase having a large particle size is formed, and the homogeneity of the resin composition tends to decrease.

  In the resin composition for semiconductor encapsulation of the present invention, in addition to the components A to D, a curing accelerator, a silane coupling agent, a pigment, a flame retardant, a flame retardant aid and the like are appropriately used as necessary. Can do.

  As said hardening accelerator, the hardening accelerator which shows basicity is used suitably, for example. That is, when a basic curing accelerator is used, an acidic mold release agent has an effect of protecting the basic curing accelerator, and thus has the effect of improving the storage stability of the resin composition and improving the fluidity of the resin.

  As such a basic curing accelerator, for example, an imidazole compound, a tertiary amine compound and the like are preferably used. Specifically, 2-ethyl-4-methylimidazole, 2-methylimidazole, 1,8-diazabicyclo [5.4.0] undecene-7, 1,5-diazabicyclo [4.3.0] nonene-5. Etc. can be illustrated. In addition, examples of other curing accelerators include phosphorus triarylphosphine and tetraarylphosphine boron salt. These curing accelerators can be used alone or in combination of two or more.

  The blending amount of the curing accelerator is preferably set to a ratio of 1 to 10 parts by weight with respect to 100 parts by weight of the phenol novolac resin. Particularly preferred is 2 to 5 parts by weight. By setting to the said range, the thing excellent in both sclerosis | hardenability and storage stability comes to be obtained.

  The silane coupling agent has a functional group that reacts with at least one of a phenol novolak resin in an epoxy resin (C component) and a molten mixture (D component) and an alkoxysilane skeleton. For example, γ-mercaptopropyl Examples include trimethylsilane, γ-aminopropyltrimethylsilane, and γ-glycidoxypropyltrimethylsilane.

  Examples of the pigment include carbon black having an electrostatic removal effect.

Examples of the flame retardant include bromine-based flame retardant, nitrogen-based flame retardant, and phosphorus-based flame retardant. And it can use together with the above-mentioned specific aluminum hydroxide (A component).

  Examples of the flame retardant aid include antimony trioxide and the like, and exhibit an excellent flame retardant effect when used in combination with a bromine-based compound.

  Furthermore, when such a resin composition is used as a sealing material, corrosion of the metal due to ionic impurities occurs. Therefore, an ion exchanger can be added to suppress the occurrence of metal corrosion due to ionic impurities. It is done. Examples of such ion exchangers include inorganic hydrotalcite compounds and bismuth compounds.

The resin composition for semiconductor encapsulation of the present invention can be produced, for example, as follows. First, a molten mixture (component D) is prepared by melt-mixing a phenol novolac resin and a specific release agent (d) in advance. As conditions for this melt mixing, for example, it is preferable to set to about 100 to 200 ° C. Next, the remaining components, specific aluminum hydroxide (component A), inorganic filler (component B), epoxy resin (component C), and, if necessary, curing accelerator, silane coupling agent, Other additives such as flame retardants, flame retardant aids, pigments, mold release agents and the like are blended in a predetermined ratio. Next, these are melted and kneaded in a heated state using a kneader such as a mixing roll machine, cooled, and then pulverized by known means, and tableted as necessary in a tablet form. The target epoxy resin composition can be produced.

  The sealing of the semiconductor element using such an epoxy resin composition is not particularly limited, and can be performed by a known molding method such as ordinary transfer molding.

In the present invention, as described above, as a semiconductor device obtained by sealing a semiconductor element using a resin composition for semiconductor sealing, a semiconductor device having a size equal to or smaller than the following dimension (x) is used. It is intended.
(X) 2 mm long × 2 mm wide × 1 mm height.
That is, in a small semiconductor package using a conventional sealing material, the resin composition for semiconductor encapsulation of the present invention is used for resin sealing of a small semiconductor package having a size equal to or smaller than the dimension (x). It was difficult to remove the formed burrs, and a sealing resin portion excellent in mechanical strength, moldability, storage stability and flame retardancy was formed.

  Next, examples will be described together with comparative examples. However, the present invention is not limited to these examples.

  Each component shown below was prepared.

〔Epoxy resin〕
o-Cresol novolac type epoxy resin (epoxy equivalent 198, softening point 60 ° C.)

[Phenolic resin]
Phenol formaldehyde novolak resin (hydroxyl equivalent 105, softening point 71 ° C)

[Curing accelerator]
1,8-diazabicyclo [5.4.0] undecene-7 (DBU)

[Inorganic filler a]
Spherical fused silica powder (average particle size 14μm, maximum particle size 64μm)
[Inorganic filler b]
Crushed fused silica powder (average particle size 5 μm, maximum particle size 30 μm)

[Aluminum hydroxide a]
Average particle size 15 μm, specific surface area 1.2 m ² / g
[Aluminum hydroxide b]
Average particle size 3μm, specific surface area 1.6m ² / g
[Aluminum hydroxide c]
Average particle size 25 μm, specific surface area 0.9 m ² / g
[Magnesium hydroxide]
Average particle size 1 μm, specific surface area 4.0 m ² / g

[Release agent a]
Oxidized polyethylene wax (acid value 60, weight average molecular weight 5000)
[Release agent b]
Oxidized polyethylene wax (acid value 80, weight average molecular weight 3000)
[Release agent c]
Oxidized polyethylene wax (acid value 50, weight average molecular weight 6500)
[Release agent d]
Oxidized polyethylene wax (acid number 100, weight average molecular weight 1500)

[Pigment]
Carbon black (average particle size 25 nm, a nitrogen adsorption specific surface area 120m ² / g, DBP adsorption of 120cm ³ / 100g, pH8)

[Examples 1-7, Comparative Examples 1-4]
Each component shown above was mix | blended in the ratio shown in Table 1-Table 2 of the postscript, and it melt-kneaded for 5 minutes over the roll kneader heated to 80-120 degreeC. Next, after cooling the melt, the solid was pulverized into a powder. Next, the obtained powder was filled into a cylindrical mold and pressurized from both ends of the cylinder to prepare a columnar tablet-shaped epoxy resin composition. In Examples 1 to 7 and Comparative Examples 1 to 3, a phenol resin and a release agent were previously melt-mixed (120 ° C.) at a ratio shown in the same table to prepare a premix, and then the premix and The other remaining ingredients were blended. On the other hand, in Comparative Example 4, all the blending components were blended at the same time without previously performing melt mixing.

  Using the tablet-like epoxy resin compositions of Examples and Comparative Examples thus obtained, using a low-pressure transfer molding machine, the molding temperature was 175 ° C., the injection pressure was 7 MPa, and the curing time was 120 seconds. A molded product of × 2 mm × thickness 0.7 mm was produced. Next, it removed from the metal mold | die and the test piece was produced by performing postcure at 175 degreeC x 5 hours. And using this, it measured and evaluated in accordance with the following method about moldability, a burr | flash removal property, preservability, and a flame retardance. The results are also shown in Tables 1 and 2 below.

[Formability]
Using the test piece, 10 connected holes having a hole (0.15 mm height) communicating with the next 2 mm × 2 mm × 0.7 mm cavity on the opposite side of the gate of the 2 mm × 2 mm × 0.7 mm cavity. Evaluation was carried out using a mold having six rows and capable of molding 60 at the same time. Then, it was confirmed and evaluated at what number of connected cavities unfilled. As a result, the case where there was no unfilled up to the fifth piece was indicated as ◯, and the others were indicated as ×.

(Releasability)
○ when the molded product can be released from the mold smoothly during the above-mentioned moldability evaluation, △ the runner part is in close contact with the mold and difficult to peel, △ the one that can be folded at the gate part, and the molded product adheres to the mold The case where the molded product was missing was indicated as x.

[Preservation]
Using a tablet-shaped epoxy resin composition stored at room temperature (25 ° C.) for 10 days, a molded product was produced under the above conditions, and moldability was confirmed and evaluated. As a result, the unfilled up to the fifth connected cavity was indicated as ◯, and the others were indicated as x.

[Burr removal]
The burr portion of the test piece was folded and cracked in a molded product having a size of 2 mm × 2 mm × 0.7 mm, and whether or not a recess having a size of 0.1 mm or more was generated was evaluated. As a result, the molded product without any chipping was indicated as ◯, the remaining burr was indicated as Δ, and the others were indicated as ×.

〔Flame retardance〕
Using a low-pressure transfer molding machine, a 3.2 mm-thick test piece (size: 127 mm × 12.7 mm × 3.2 mm) was molded under conditions of a molding temperature of 175 ° C., an injection pressure of 7 MPa, and a curing time of 120 seconds. . And it took out from the metal mold | die and processed for 5 hours at the postcure 175 degreeC. Using this, the total combustion time and the longest combustion time were determined according to the UL-94 vertical method, and whether or not the V-0 standard was satisfied was evaluated. As a result, those satisfying the V-0 standard were indicated as ◯, and those not satisfying as X.

  From the above results, an example product prepared by preparing a premix of a phenol resin and a specific release agent and blending this with the remaining components has all of moldability, burr removal, storage stability and flame retardancy. Good results were obtained for.

  On the other hand, the product of Comparative Example 1 prepared by preparing a preliminary mixture with a phenol resin using a release agent other than the specific release agent was inferior in burr removal. Moreover, the comparative example 2 product which uses the aluminum hydroxide outside the said specific range and produces a preliminary mixture with a phenol resin using mold release agents other than the said specific mold release agent is inferior in preservability. As a result. Furthermore, the three comparative examples using magnesium hydroxide were inferior in moldability and storage stability. Moreover, the comparative example 4 product which does not produce a preliminary mixture and mix | blends each component simultaneously was inferior to a moldability, a burr | flash removal property, and a preservability.

  Next, an 8-pin small semiconductor device (size: length 2 mm × width 2 mm × height 0.7 mm) was produced using the tablet-like epoxy resin composition of the above-described example using a low-pressure transfer molding machine. An 8-pin small semiconductor device (package size: 2 mm long × 2 mm wide × 0.7 mm high) was produced. The molding conditions were a molding temperature of 175 ° C., an injection pressure of 7 MPa, a curing time of 120 seconds, and post-curing at 175 ° C. for 5 hours. The obtained small semiconductor device had good moldability and high reliability with no appearance damage even when the burrs were removed with high-pressure water.

Claims (4)

A semiconductor sealing resin composition used as a sealing material for a semiconductor device having a size of the following dimension (x) or less, wherein the following (A) to (D) components are used: Resin composition for stopping.
(X) 2 mm long × 2 mm wide × 1 mm height.
(A) Aluminum hydroxide having a specific surface area of 1 to ² m ² / g.
(B) An inorganic filler other than the component (A).
(C) Epoxy resin.
(D) A melt mixture obtained by melt-mixing a phenol novolac resin and the following release agent (d).
(D) An oxidized polyethylene wax having an acid value of 55 to 95 and a weight average molecular weight of 2000 to 6000. (A) above the proportion of oxidized polyethylene wax for aluminum hydroxide as component, the resin composition for semiconductor encapsulation of claim 1 Symbol placement from 3 to 10 wt%. A method for producing a resin composition for encapsulating a semiconductor used as an encapsulating material for a semiconductor device having a size of the following dimension (x) or less, wherein a phenol novolac resin and the following release agent (d) A method for producing a resin composition for semiconductor encapsulation, wherein a melt mixture is prepared by melt mixing, and then the melt mixture and the following components (A) to (C) are melt kneaded.
(X) 2 mm long × 2 mm wide × 1 mm height.
(A) Aluminum hydroxide having a specific surface area of 1 to ² m ² / g.
(B) An inorganic filler other than the component (A).
(C) Epoxy resin.
(D) An oxidized polyethylene wax having an acid value of 55 to 95 and a weight average molecular weight of 2000 to 6000. With claim 1 or 2 semiconductor sealing resin composition according, by encapsulating a semiconductor element, the following dimensions (x) the following size semiconductor device.
(X) 2 mm long × 2 mm wide × 1 mm height.