JP2009267261A - 薄膜製造装置、薄膜製造方法、薄膜太陽電池製造装置及び薄膜太陽電池製造方法 - Google Patents

薄膜製造装置、薄膜製造方法、薄膜太陽電池製造装置及び薄膜太陽電池製造方法 Download PDF

Info

Publication number
JP2009267261A
JP2009267261A JP2008117733A JP2008117733A JP2009267261A JP 2009267261 A JP2009267261 A JP 2009267261A JP 2008117733 A JP2008117733 A JP 2008117733A JP 2008117733 A JP2008117733 A JP 2008117733A JP 2009267261 A JP2009267261 A JP 2009267261A
Authority
JP
Japan
Prior art keywords
gas supply
thin film
substrate
supply port
doping
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008117733A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009267261A5 (enExample
Inventor
Yuichi Setsuhara
裕一 節原
Eiji Ino
英二 井野
Shunichi Ishihara
俊一 石原
Akira Watanabe
亮 渡邉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EBATEKKU KK
Original Assignee
EBATEKKU KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EBATEKKU KK filed Critical EBATEKKU KK
Priority to JP2008117733A priority Critical patent/JP2009267261A/ja
Publication of JP2009267261A publication Critical patent/JP2009267261A/ja
Publication of JP2009267261A5 publication Critical patent/JP2009267261A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)
JP2008117733A 2008-04-28 2008-04-28 薄膜製造装置、薄膜製造方法、薄膜太陽電池製造装置及び薄膜太陽電池製造方法 Pending JP2009267261A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008117733A JP2009267261A (ja) 2008-04-28 2008-04-28 薄膜製造装置、薄膜製造方法、薄膜太陽電池製造装置及び薄膜太陽電池製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008117733A JP2009267261A (ja) 2008-04-28 2008-04-28 薄膜製造装置、薄膜製造方法、薄膜太陽電池製造装置及び薄膜太陽電池製造方法

Publications (2)

Publication Number Publication Date
JP2009267261A true JP2009267261A (ja) 2009-11-12
JP2009267261A5 JP2009267261A5 (enExample) 2011-02-10

Family

ID=41392696

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008117733A Pending JP2009267261A (ja) 2008-04-28 2008-04-28 薄膜製造装置、薄膜製造方法、薄膜太陽電池製造装置及び薄膜太陽電池製造方法

Country Status (1)

Country Link
JP (1) JP2009267261A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102312212A (zh) * 2010-06-30 2012-01-11 上方能源技术(杭州)有限公司 扫描镀膜装置及扫描镀膜组件
JP2013513238A (ja) * 2009-12-03 2013-04-18 アプライド マテリアルズ インコーポレイテッド 高移動度のモノリシックｐｉｎダイオード

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6354934A (ja) * 1986-08-25 1988-03-09 Canon Inc 気相励起装置
JPH0324269A (ja) * 1989-06-21 1991-02-01 Canon Inc 堆積膜形成装置
JPH03197682A (ja) * 1989-09-27 1991-08-29 Ashida:Kk Ｅｃｒプラズマｃｖｄ装置
JPH09275222A (ja) * 1996-04-05 1997-10-21 Tokuyama Corp 非晶質半導体素子
JP2003142418A (ja) * 2002-07-22 2003-05-16 Mega Chips Corp 単結晶薄膜形成方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6354934A (ja) * 1986-08-25 1988-03-09 Canon Inc 気相励起装置
JPH0324269A (ja) * 1989-06-21 1991-02-01 Canon Inc 堆積膜形成装置
JPH03197682A (ja) * 1989-09-27 1991-08-29 Ashida:Kk Ｅｃｒプラズマｃｖｄ装置
JPH09275222A (ja) * 1996-04-05 1997-10-21 Tokuyama Corp 非晶質半導体素子
JP2003142418A (ja) * 2002-07-22 2003-05-16 Mega Chips Corp 単結晶薄膜形成方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013513238A (ja) * 2009-12-03 2013-04-18 アプライド マテリアルズ インコーポレイテッド 高移動度のモノリシックｐｉｎダイオード
CN102312212A (zh) * 2010-06-30 2012-01-11 上方能源技术(杭州)有限公司 扫描镀膜装置及扫描镀膜组件

Similar Documents

Publication Publication Date Title
US4771015A (en) Method for producing an electronic device having a multi-layer structure
Matsuda Thin-film silicon–growth process and solar cell application–
US10049859B2 (en) Plasma generating units for processing a substrate
US7919398B2 (en) Microcrystalline silicon deposition for thin film solar applications
US20130295709A1 (en) Method for manufacturing photoelectric conversion elements
KR20100095426A (ko) 증착 공정들 간의 플라즈마 처리
US8968473B2 (en) Stackable multi-port gas nozzles
TWI496928B (zh) 薄膜蒸鍍裝置
US20100144122A1 (en) Hybrid chemical vapor deposition process combining hot-wire cvd and plasma-enhanced cvd
KR20150020097A (ko) 게르마늄 주석을 포함하는 막의 형성 방법 그리고 그 막을 포함하는 구조물 및 디바이스
JP2010067973A (ja) 薄膜の微結晶シリコン合金及びウエハベースのソーラー用途
US4735822A (en) Method for producing an electronic device having a multi-layer structure
US20120108002A1 (en) Apparatus, method and system for depositing layer of solar cell
KR100299784B1 (ko) 요철상폴리실리콘층의형성방법및이방법의실시에사용되는기판처리장치와반도체메모리디바이스
US20090159432A1 (en) Thin-film deposition apparatus using discharge electrode and solar cell fabrication method
US20110220026A1 (en) Plasma processing device
US20090130827A1 (en) Intrinsic amorphous silicon layer
KR101279495B1 (ko) 광전 변환 장치의 제조 방법, 광전 변환 장치, 광전 변환 장치의 제조 시스템 및 광전 변환 장치 제조 시스템의 사용 방법
JP2009267261A (ja) 薄膜製造装置、薄膜製造方法、薄膜太陽電池製造装置及び薄膜太陽電池製造方法
KR20110050465A (ko) 광전 변환 장치의 제조방법, 광전 변환 장치 및 광전 변환 장치의 제조 시스템
US4772570A (en) Method for producing an electronic device having a multi-layer structure
US20090050058A1 (en) Programmed high speed deposition of amorphous, nanocrystalline, microcrystalline, or polycrystalline materials having low intrinsic defect density
KR20230161385A (ko) 저마늄-주석 막들을 포함하는 구조들과 소자들 및 이들의 제조 방법
US8426240B2 (en) Method for manufacturing photovoltaic device including flexible or inflexible substrate
US20060219170A1 (en) Pore cathode for the mass production of photovoltaic devices having increased conversion efficiency

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101217

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20101217

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20111214

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120124

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20120522