JP2009246061A - Thermal treatment apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a thermal treatment apparatus that keeps in-plane uniformity of the film thickness of a thin film high after a thermal treatment while preventing an irradiation window from getting fogged by providing a film sticking preventive member with a light shield portion which locally blocks the transmission of heat rays. <P>SOLUTION: The thermal treatment apparatus that performs a thermal treatment on a workpiece W includes a treatment container 6 in which the workpiece is stored, a support means 38 of supporting the workpiece, a first irradiation window 26A provided to a ceiling portion of the treatment container, a first heating means 28A provided outside the first irradiation window and emitting heat rays for heating, a gas supply means 12 of supplying a predetermined gas into the treatment container, an exhaust means 20 of exhausting the atmosphere in the treatment container, and the film sticking preventive member 80 provided between the support means and first irradiation window and having the light shield portion 86 formed partially so as to cut off part or the whole of the heat rays. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a heat treatment apparatus for performing a predetermined heat treatment such as an annealing process on an object to be processed such as a semiconductor wafer.

  In general, in order to manufacture a semiconductor integrated circuit, various heat treatments such as film formation, etching, oxidation, diffusion, and annealing are repeatedly performed on a semiconductor wafer made of a silicon substrate or the like. Then, as the semiconductor wafer size increases from, for example, 8 inches to 12 inches, there is a tendency that single-wafer type heat treatment apparatuses that can relatively easily obtain in-plane uniformity of heat treatment are used (Patent Documents 1 and 2). For example, an annealing process will be described as an example of the heat treatment. This annealing process is used to stabilize the characteristics of the thin film formed in the previous process or the surface of the semiconductor wafer doped with impurities. When a silicon nitride film for a gate is formed by nitriding the surface with microwaves, an annealing process is performed at a high temperature of about 1000 ° C. in order to modify and stabilize the silicon nitride film.

  Furthermore, as another annealing treatment, when a silicon oxide film formed on the surface of a semiconductor wafer is modified and stabilized, or a polycrystalline silicon thin film formed on the surface of a glass substrate is melted and solidified to be a single crystal For example, an annealing process is known in which heat treatment is performed at a high temperature of about 1000 ° C.

  When this type of annealing treatment is performed with a single wafer heat treatment apparatus, for example, the semiconductor wafer is introduced into a processing container having a transparent irradiation window, and a heating lamp or a laser element disposed outside the irradiation window is used. The generated heat rays are introduced into the processing container through the irradiation window, and the annealing treatment is performed by irradiating and heating the semiconductor wafer with the heat rays.

  Further, in addition to the annealing heat treatment apparatus as described above, a dummy wafer formed in the same form as the semiconductor wafer is installed in parallel with the semiconductor wafer supported as described above in the vertical direction. In addition, heating lamps that can be controlled independently as heating means are arranged on both the upper and lower sides, respectively, and the temperature of the above-mentioned simulated wafer is monitored with a radiation thermometer, etc. An apparatus that controls the heating means in exactly the same manner is also known (Patent Document 3). The temperature control using the pseudo wafer as described above is also referred to as mirroring control.

  By the way, as described above, when annealing a thin film such as a semiconductor wafer at a high temperature, it is inevitable that a substance obtained by decomposing the thin film is generated from the thin film or a certain substance is emitted from a member in the processing container. .

  In this case, when each of the above substances adheres to and accumulates on the inner surface of the irradiation window and clouding occurs, the permeability to heat rays deteriorates, the temperature of the semiconductor wafer decreases, or the clouding occurs locally. Was a cause of temperature unevenness in the semiconductor wafer.

  In order to remove the fogging of the irradiation window, it is necessary to replace the irradiation window and perform polishing or the like. Therefore, it takes a lot of time to replace the irradiation window, and the operating rate of the apparatus also decreases. . Therefore, in order to prevent the occurrence of fogging on the irradiation window, a technique in which a pollution prevention window is provided immediately before the irradiation window has been proposed (Patent Document 4). Specifically, a transparent plate-like inexpensive pollution prevention window is provided in parallel inside the irradiation window, and substances generated from a thin film or the like are deposited and deposited on the pollution prevention window, which adheres to the irradiation window itself. It is not allowed to deposit. And this pollution prevention window is exchanged as needed.

JP 2004-79985 A JP 2003-332408 A JP 2006-5177 A JP 2000-49110 A

  By the way, by providing the anti-contamination window for the irradiation window as described above, it was possible to effectively prevent the irradiation window from being fogged. However, in an actual annealing process, for example, depending on the type of thin film to be annealed, the film thickness near the central part of the semiconductor wafer is reduced and the film thickness near the peripheral part is increased, or vice versa. In some cases, the film thickness in the vicinity increases and the film thickness in the vicinity of the peripheral area decreases, and the in-plane uniformity of the film thickness after the annealing process may decrease.

  In order to avoid such a phenomenon, a heating lamp for irradiating the semiconductor wafer surface is divided into a plurality of zones, for example, an inner zone and an outer zone, for example, concentrically, and the irradiation amount can be individually controlled for each zone. Has been done.

  However, even if the heating lamp is individually controlled for each zone as described above, it is insufficient to improve the in-plane uniformity of the film thickness. In particular, since the peripheral part of the semiconductor wafer has a large amount of heat that escapes to the outside with respect to the central part, the peripheral part of the semiconductor wafer is controlled so as to input more heat than the central part. The problem has not been solved sufficiently.

  The present invention has been devised to pay attention to the above problems and to effectively solve them. The object of the present invention is to provide a light-shielding part that partially or completely blocks the transmission of heat rays to the film-adhering member, thereby preventing the irradiation window from being fogged and preventing the thin film after heat treatment. An object of the present invention is to provide a heat treatment apparatus capable of maintaining high in-plane uniformity of film thickness.

  Another object of the present invention is to provide a film-depositing member locally corresponding to a region where a large amount of the substance released from the object reaches, and fogging occurs in the irradiation window while maintaining high irradiation efficiency. It is an object of the present invention to provide a heat treatment apparatus that can suppress this.

  The inventors of the present invention are able to maintain high in-plane uniformity of film thickness by reducing the amount of heat rays irradiated to a region where a thin film formed on a semiconductor wafer is thickened by annealing. By discovering that deposits attached to the irradiation window can be significantly reduced by selectively providing a film deposition preventive member in a region where a large amount of material released from the thin film formed on the wafer reaches. Invented.

  The invention according to claim 1 is a heat treatment apparatus for performing a predetermined heat treatment on an object to be processed, a processing container in which the object to be processed can be accommodated, a support means for supporting the object to be processed, and the processing A first irradiation window provided on a ceiling portion of the container; a first heating means provided on the outside of the first irradiation window that emits a heat ray for heating; and supplying a predetermined gas into the processing container Gas supply means, exhaust means for exhausting the atmosphere in the processing container, support means and the first irradiation window, and part or all of the heat rays are provided in a part thereof And a film deposition preventing member on which a light shielding portion for blocking is formed.

  Thus, by providing a light shielding part that partially or completely blocks the transmission of heat rays to the film deposition preventing member, the film thickness of the thin film after the heat treatment is prevented while preventing the irradiation window from being fogged. In-plane uniformity can be maintained high.

In this case, for example, as described in claim 2, the film deposition preventing member includes a quartz glass plate.
Further, for example, as described in claim 3, the light shielding portion is formed in a ring shape around the periphery of the film deposition preventing member.
Further, for example, as described in claim 4, the light shielding portion is formed in a circular shape at a central portion of the film deposition preventing member.

For example, as described in claim 5, the light shielding portion is in an opaque glass state.
Further, as described in, for example, claim 6, the film adhesion prevention member has a pressure adjustment communicated with a space defined between the lower surface of the first irradiation window and the upper surface of the film adhesion prevention member. A communication path is formed.

  The invention according to claim 7 is a heat treatment apparatus for performing a predetermined heat treatment on an object to be processed, a processing container in which the object to be processed can be accommodated, a support means for supporting the object to be processed, and the processing A first irradiation window provided on a ceiling portion of the container; a first heating means provided on the outside of the first irradiation window that emits a heat ray for heating; and supplying a predetermined gas into the processing container Gas supply means, exhaust means for exhausting the atmosphere in the processing container, and a size corresponding to a part of the surface of the object to be processed and provided between the support means and the first irradiation window. A heat-treating apparatus characterized by comprising:

  In this way, by providing the film adhesion member set to a size corresponding to a part of the surface of the object to be processed between the support means for supporting the object to be processed and the irradiation window, for example, from the object to be processed A film deposition preventing member can be locally provided corresponding to a region where a large amount of the released substance reaches, and fogging of the irradiation window can be suppressed while maintaining high irradiation efficiency.

In this case, for example, as described in claim 8, the film deposition preventing member is formed in a ring shape having a size corresponding to a peripheral portion of the object to be processed, and the film deposition preventing member is formed in a ring shape. With quartz glass made.
For example, as described in claim 9, the film deposition preventing member is formed in a circular shape having a size corresponding to a central portion of the object to be processed, and the film deposition preventing member is a disc-shaped quartz. Has glass.

For example, as described in claim 10, the quartz glass is made transparent.
For example, as described in claim 11, the quartz glass is in an opaque state in order to block part or all of the heat ray.
For example, the heating means includes a heating lamp.
For example, as described in claim 13, the predetermined heat treatment is an annealing treatment for heating a thin film formed on the surface of the object to be treated.

  According to a fourteenth aspect of the present invention, there is provided a heat treatment apparatus for performing a predetermined heat treatment on an object to be processed, a processing container in which the object to be processed can be accommodated, a support means for supporting the object to be processed, the object to be processed A simulated object to be processed which is supported above the object to be processed and opposed to the object to be processed; a first irradiation window provided on a ceiling portion of the processing container; and a first irradiation window A first heating means provided on the outside for emitting a heating wire for heating, a second irradiation window provided on the bottom of the processing vessel, and a heating wire for heating provided on the outside of the second irradiation window A second heating means for emitting a gas, a gas supply means for supplying a predetermined gas into the processing container, an exhaust means for exhausting the atmosphere in the processing container, and a temperature for measuring the temperature of the simulated workpiece A first measuring device and a second measuring device based on measured values of the measuring device and the temperature measuring device; A temperature control unit for controlling the heating means, a heat treatment apparatus characterized by comprising a.

In this case, for example, as described in claim 15, the temperature measuring device is a radiation thermometer provided facing the upper surface of the simulated object to be processed.
Further, for example, as described in claim 16, the support means includes a rotation mechanism for rotating the object to be processed.
In addition, for example, as described in claim 17, the simulated object to be processed is provided in a fixed manner.

Further, for example, as described in claim 18, the distance between the simulated object to be processed and the first heating means is the same as the distance between the object to be processed and the second heating means. It is set to be.
Further, for example, as described in claim 19, the temperature control unit controls the first heating unit and the second heating unit to radiate the same amount of heat.

Further, for example, as described in claim 20, the heating means includes a heating lamp.
For example, as defined in claim 21, the predetermined heat treatment is an annealing treatment for heating a thin film formed on the surface of the object to be treated.

According to the heat treatment apparatus according to the present invention, the following excellent operational effects can be exhibited.
According to the invention according to claim 1 and the dependent claims, fogging occurs in the irradiation window by providing the film deposition preventing member with a light shielding portion that partially or completely blocks the transmission of heat rays. In-plane uniformity of the thickness of the thin film after the heat treatment can be kept high while preventing this.

  According to the invention which concerns on Claim 7 and the claim which depends on it, the film prevention set to the magnitude | size corresponding to a part of surface of a to-be-processed object between the support means and the irradiation window which support a to-be-processed object. By providing an adhesion member, for example, a film adhesion prevention member can be provided locally corresponding to a region where a large amount of material released from the object reaches, and fogging occurs in the irradiation window while maintaining high irradiation efficiency. Can be suppressed.

  Hereinafter, a preferred embodiment of a heat treatment apparatus according to the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 is a cross-sectional view showing a first embodiment of a heat treatment apparatus according to the present invention, FIG. 2 is a plan view showing a film deposition member used in the heat treatment apparatus shown in FIG. 1, and FIG. 3 is formed on an object to be treated. It is a figure which shows the relationship between the change of a film thickness, and the film | membrane protection member to be used.

<First Embodiment>
First, a first embodiment of the present invention will be described.
As shown in the figure, the heat treatment apparatus 4 has a processing container 6 formed into a cylindrical shape from an aluminum alloy or the like. An opening 8 for loading and unloading a semiconductor wafer W as an object to be processed is provided in the side wall of the processing container 6, and a gate valve 10 that can be opened and closed in an airtight manner is provided in the opening 8. . Further, gas supply means 12 for supplying a predetermined gas necessary for heat treatment such as annealing, for example, N ₂ or O _2, is provided in the side wall of the processing container 6.

  Here, as the gas supply means 12, a gas supply nozzle 12A made of, for example, quartz is provided through the side wall of the processing vessel 6, and the gas is supplied while the flow rate is controlled by a flow rate controller such as a mass flow controller (not shown). It can be done. Instead of the gas supply nozzle 12A, for example, a quartz shower head structure or the like may be used.

  Further, an exhaust port 14 is provided at the bottom of the processing vessel 6, and a pressure adjusting valve 17 and an exhaust pump 18 such as a vacuum pump are sequentially provided in the exhaust passage 16 in the exhaust port 14. An exhaust means 20 is connected so that the atmosphere in the processing container 6 can be exhausted, for example, evacuated. In addition, various pressure control from atmospheric pressure to a high vacuum state is possible for the inside of the processing container 6 according to the processing mode.

  Further, a large-diameter opening 22A is formed in the ceiling 6A of the processing container 6, and the opening 22A is a first made of, for example, a transparent quartz plate via a seal member 24A such as an O-ring. The irradiation window 26A is attached and fixed in an airtight manner. A first heating means 28A is provided outside the first irradiation window 26A. The first heating means 28A has a lamp house 30A whose inner surface is a reflecting surface. In the lamp house 30A, a plurality of heating lamps 32A made of a straight tube, such as a halogen lamp, are flattened. The semiconductor wafers W are arranged in a row so that the semiconductor wafers W can be heated by radiation (heat rays) from the heating lamps 32A.

  A spherical lamp may be used as the halogen lamp. Further, here, a temperature measuring device 34 made of, for example, a pyrosensor (radiation thermometer) is provided at the bottom 6B of the processing container 6, and this measured value is inputted to a temperature control unit 36 made of, for example, a microcomputer, Based on the measured value, the power applied to the first heating means 28A is controlled to control the semiconductor wafer to a predetermined temperature. In this case, the first heating means 28A may be concentrically divided into, for example, an inner circumferential zone and an outer circumferential zone so that the temperature can be individually controlled for each zone.

  In the processing container 6, support means 38 for supporting the semiconductor wafer W is provided. Here, the support means 38 also serves as a part of an elevating mechanism 40 that elevates and lowers the semiconductor wafer when the semiconductor wafer W is carried in and out.

  Specifically, the supporting means 38 has a large-diameter circular ring-shaped lifting plate 42 made of, for example, quartz (quartz), and this lifting plate 42 is also a large-diameter circular ring-shaped member made of quartz. Is mounted on the mounting plate 44. The ring-shaped mounting plate 44 that supports the elevating plate 42 is not fixed to the side wall of the processing container 6, but is rotatable here by a rotation mechanism 46. Specifically, the rotating mechanism 46 includes a plurality of rotating rollers 50 that are rotatably supported on the side wall of the processing container 6 via bearings 48. At least three rotating rollers 50 (two in the illustrated example) are provided at equal intervals along the circumferential direction of the processing container 6.

  The bearing 48 is sealed with, for example, a magnetic fluid in order to allow rotation of the rotating roller 50 while maintaining airtightness in the processing container 6. Each of the rotating rollers 50 is made of, for example, quartz, and is formed in a truncated cone shape, for example, and the above-described mounting plate 44 is placed on and supported by the upper surface of each rotating roller 50. Is rotated so that the mounting plate 44 can be rotated in the circumferential direction. In order to obtain this rotational drive, a drive motor 52 is connected to one of the three rotary rollers 50.

  Further, a hard receiving member 54 made of, for example, SiC is provided along the circumferential direction of the outer corner of the mounting plate 44, and the rotating roller 50 is brought into direct contact with the receiving member 54. . By providing the receiving member 54, the generation of particles is prevented here.

  A positioning hole 56 is formed in a part of the mounting plate 44, and a light emitter 58 that emits laser light and a light receiver 60 that receives the laser light are provided above and below the positioning hole 56, for example. By detecting the laser beam passing through the positioning hole 56, the home position of the mounting plate 44 can be detected and the position in the rotation direction can be recognized. The mounting plate 44 may be fixed to the side wall side of the processing container 6 so as not to rotate.

  From the ring-shaped lifting plate 42, a plurality of, for example, three (only two in the illustrated example) support arms 62 made of quartz are provided extending in the center direction. The support arms 62 are arranged at equal intervals along the circumferential direction of the elevating plate 42. The tip of each support arm 62 is provided with a support pin 64 made of, for example, quartz, and the upper end of each support pin 64 is brought into contact with the peripheral portion on the back surface of the semiconductor wafer W, thereby the semiconductor wafer. Supports W.

  In order to raise and lower the elevating plate 42, an elevating actuator 66 is provided at the bottom 6 </ b> B of the processing container 6 as a part of the elevating mechanism 40. For example, three lift actuators 66 (only two in the illustrated example) are provided along the circumferential direction of the bottom 6B. Each lifting / lowering actuator 66 is provided with a lifting / lowering rod 70 inserted through the through hole 68 of the container bottom 6B in a loosely fitted state.

  In addition, an insertion hole 72 for allowing the lifting rod 70 to pass through is formed in the mounting plate 44, and the upper end portion of the lifting rod 70 is inserted into the insertion hole 72 to push the lifting plate 42 upward. It is possible to do. Therefore, the lift mechanism 66 is formed by the lift actuator 66 and the support means 38. In addition, a metal bellows 74 that can be extended and contracted is interposed in the bottom through portion of the lifting rod 70, and the lifting rod 70 can be allowed to move up and down while maintaining airtightness in the processing container 6. It is like that.

  And in this processing container 6, the film | membrane prevention member 80 which is the characteristics of this invention is provided between the said support means 38 and the said 1st irradiation window 26. As shown in FIG. Specifically, the film deposition preventing member 80 is entirely made of, for example, a circular quartz glass plate 82 having a large heat resistance and corrosion resistance, and is set to a size that covers the entire surface of the first irradiation window 26A. ing. In other words, the diameter is set equal to or larger than that of the semiconductor wafer W so as to cover the entire surface of the semiconductor wafer W.

  The ceiling portion 6A is detachably attached and fixed by bolts 84 so as to cover the opening 22A formed here. Thus, the quartz glass plate 82 can be replaced when a certain amount of deposits are deposited on the quartz glass plate 82. The bolt 84 is made of a material that does not cause metal contamination, such as an aluminum alloy or a ceramic material. The quartz glass plate 82 is formed with a light shielding portion 86 for blocking part or all of the irradiation light (heat rays) from the first heating means 28A.

  As shown in FIG. 2A, here, in order to suppress the amount of heat reaching the peripheral part (edge part) of the semiconductor wafer W, the light shielding part 86 is formed in a ring shape around the peripheral part of the quartz glass plate 82. It is formed (area shown by oblique lines in FIG. 2). Then, the region other than the light shielding portion 86, that is, the transmission region 88 on the center side here is in a state transparent to the heat rays, and the heat rays passing therethrough are transmitted without being lost, and the semiconductor wafer W is transmitted. It can be heated.

  As described above, the light shielding portion 86 is in an opaque glass state in order to suppress the heat dose passing therethrough. In this case, the opaque glass state includes a semi-transparent state in which a part of the irradiation light can be passed from a state where the irradiation light is completely blocked, and the transmissivity thereof is on the semiconductor wafer W. The thickness is determined based on the film thickness characteristics of the thin film to be annealed formed by annealing. Specifically, the light shielding portion 86 is in a frosted glass state, a frosted glass state, a frosted glass state, a foamed glass state in which bubbles are included, or a milky white turbid glass state. It is preferable to set a state in which the irradiation light is diffusely reflected. Further, the light shielding part 86 may be configured to coat, for example, magnesium oxide as a light shielding material on transparent glass.

  As a result, it is possible to control so that a large amount of heat rays reach the central portion of the semiconductor wafer W and only a small amount of heat rays reach the peripheral portion. The quartz glass plate 82 is provided with a pressure adjustment series for adjusting the pressure in the space 90 defined between the lower surface of the first irradiation window 26A and the upper surface of the quartz glass plate 82 (pressure release). A passage 92 is formed, and even if the inside of the processing container 6 is increased or decreased, a force due to a pressure difference does not act on the quartz glass plate 82, and this breakage can be prevented. Yes.

  Here, the pressure adjusting communication path 92 is formed by a minute through hole 92A. In this case, instead of the through hole 92A, a minute communication groove or the like extending in the radial direction may be formed in the periphery of the upper surface of the quartz glass plate 82. Although the quartz glass plate 82 is attached to the ceiling 6 </ b> A, it may be supported from the side wall of the processing vessel 6.

  In the case shown in FIG. 2A, the central portion of the quartz glass plate 82 is a transmission region 88 and the peripheral portion is a light shielding portion 86, but on the contrary, it is shown in FIG. In this case, the central portion of the quartz glass plate 82 serves as a light shielding portion 86 and the peripheral portion serves as a transmission region 88, which corresponds to the characteristics of the thin film to be annealed, as shown in FIGS. 2A and 2B. The two film adhesion preventing members 80 shown in FIG.

  The operation of the entire apparatus, for example, control of the semiconductor wafer temperature, the pressure in the container, the supply amount of each gas, and the like is performed by an apparatus control unit 96 formed of a computer. A computer-readable program necessary for this control is stored in advance in the storage medium 98. The storage medium 98 includes, for example, a flexible disk, a CD (Compact Disc), a CD-ROM, a hard disk, a flash memory, or a DVD.

  Next, the operation of the heat treatment apparatus 4 configured as described above will be described. First, when the semiconductor wafer W is loaded into the processing container 6, the semiconductor wafer W is loaded into the processing container 6 from the opened gate valve 10 through the opening 8 by the transfer arm (not shown). The lift actuator 66 of the lift mechanism 40 is driven to extend the lift rod 70 upward, thereby pushing up the lift plate 42 of the support means 38 and raising the support pin 64.

  As a result, the semiconductor wafer W carried into the processing container 6 by the transfer arm (not shown) is pushed up by the support pins 64 rising from below, whereby the semiconductor wafer W is moved from the transfer arm to the support pins 64 side. Is passed and held.

Next, the transport arm is extracted from the processing container 6 and the lift rod 70 is lowered while the semiconductor wafer W is held by the support pins 64 as described above, whereby the lift plate 42 as shown in FIG. Is placed on the placement plate 44. Then, the gate valve 10 is closed to seal the inside of the processing container 6, and necessary gases such as N ₂ and O ₂ are supplied from the gas supply means 12 into the processing container 6 while controlling the flow rate, respectively, and further, the exhaust means 20. To maintain the inside of the processing container 6 in a predetermined pressure atmosphere.

  Then, the driving motor 52 of the rotating mechanism 46 is driven to rotate the rotating roller 50, thereby rotating the mounting plate 44 and the lifting plate 42 in the circumferential direction, thereby rotating the semiconductor wafer W in the same plane. At the same time, the respective heating lamps 32A of the first heating means 28A are turned on to perform heat treatment, for example, annealing while maintaining the temperature of the semiconductor wafer W at a predetermined temperature, for example, about 1050 ° C.

  While this annealing process is being performed, the temperature of the semiconductor wafer W is measured by a temperature measuring device 34 formed of, for example, a radiation thermometer provided on the container bottom 6B, and the temperature control unit 36 determines the temperature based on the measured value. The irradiation light from the first heating unit 28A is feedback-controlled, whereby the semiconductor wafer W is maintained at a predetermined temperature set in advance.

  On the surface of the semiconductor wafer W, a thin film to be annealed in the previous process is formed in advance, and the thin film is heated by the annealing process, and the film quality is modified by the annealing process. Become.

The thin film is, for example, a silicon oxide film (SiO ₂ ) or a silicon nitride film (SiN), and various thin films are subjected to annealing treatment. Here, the annealing process conditions depend on the type of thin film to be annealed, but the semiconductor wafer temperature is in the range of about 700 to 1050 ° C., and the pressure is from 0.1 Torr (13.3 Pa) to 760 Torr (1018 Pa). ) N ₂ gas is in the range of 500 to 10,000 sccm, and O ₂ gas is in the range of 0 to 100 sccm.

  Here, when the semiconductor wafer W on which the thin film is formed is heated to, for example, about 1050 ° C. during the annealing process, for example, a substance in which the thin film is decomposed is generated from the thin film, or any substance is generated from each member in the processing container 6. May occur. In this case, in the conventional heat treatment apparatus, the generated substance rises as shown by an arrow 99 and deposits and accumulates on the irradiation window to cause fogging. Costs were also rising.

  On the other hand, in the case of the present invention, a quartz glass plate 82 that can be easily replaced is formed above the semiconductor wafer W, that is, below the first irradiation window 26A provided on the ceiling 6A. Since the film deposition preventing member 80 is provided, the substance generated from the thin film or the like adheres to and accumulates on the lower surface of the quartz glass plate 82, and prevents it from adhering and depositing on the first irradiation window 26A. Can do.

  Therefore, when a certain number of semiconductor wafers W are annealed, the quartz glass plate 82 is replaced with a new one. The maintenance work in this case can be performed very quickly and easily because the quartz glass plate 82 is simply replaced. Therefore, it is possible to prevent the operating rate of the apparatus from decreasing.

  Further, in the conventional heat treatment apparatus, depending on the film type formed on the surface of the semiconductor wafer W, the peripheral portion of the thin film on the semiconductor wafer surface becomes thicker than the central portion in the annealing treatment (after the heat treatment), Or, conversely, the peripheral portion may be thinner than the central portion, and the in-plane uniformity of the film thickness may be significantly reduced.

  On the other hand, in the present invention, a part of the quartz glass plate 82 which is the film adhesion preventing member 80 is shielded from a part or all of the heat rays (irradiation light) from the first heating means 28A. Since the portion 86 is provided to reduce the transmittance and the radiation rate of the portion to suppress the amount of heat entering the corresponding portion of the surface of the semiconductor wafer W, an increase in the thickness of the portion can be reduced. As a result, the in-plane uniformity of the film thickness can be kept high.

  Specifically, as shown in FIG. 3A, as a conventional tendency, the thin film 110 formed on the semiconductor wafer W has a characteristic that the central portion is thin and the peripheral portion is thick after annealing. When the thin film is annealed, as shown in FIG. 2A, a film deposition member 80 having a transmission region 88 in the central portion and a ring-shaped light shielding portion 86 in the peripheral portion is used. Annealing is performed. As a result, the amount of heat (irradiation amount) incident on the peripheral portion of the thin film 110 is reduced and an increase in the thickness of the peripheral portion is suppressed, and the in-plane uniformity of the film thickness after the annealing treatment can be improved.

  Conversely, as shown in FIG. 3B, specifically, as shown in FIG. 3B, as a conventional tendency, the thin film 110 formed on the semiconductor wafer W has a thick central portion and a thin peripheral portion after annealing. When annealing a thin film having various characteristics, as shown in FIG. 2 (B), film deposition having a transmission region 88 in the peripheral portion and a ring-shaped light shielding portion 86 in the central portion. Annealing treatment is performed using the member 80. As a result, the amount of heat (irradiation amount) incident on the central portion of the thin film 110 is reduced, the increase in the thickness of the central portion is suppressed, and the in-plane uniformity of the thickness after the annealing treatment can be improved.

  Further, in the process of performing the annealing process, the pressure in the processing container 6 may be greatly changed. In this case, a partition is formed between the first irradiation window 26A and the film deposition preventing member 80. The pressure in the space 90 is the same as the pressure in the processing container 6 on the side where the semiconductor wafer W is placed by passing the gas through the pressure adjusting communication path 92 formed in the film deposition preventing member 80. Become. As a result, the force due to the pressure difference does not act on the film deposition preventing member 80, and this damage can be prevented.

  As described above, according to the first embodiment of the apparatus of the present invention, by providing the light-shielding portion 86 for locally or partially blocking the transmission of heat rays in the film deposition preventing member 80, the irradiation window (first In-plane uniformity of the thickness of the thin film after the heat treatment can be kept high while preventing the irradiation window 26A) from being fogged.

Second Embodiment
Next, a second embodiment of the present invention will be described. In the second embodiment, the present invention is applied to a heat treatment apparatus that performs mirroring control as disclosed in Patent Document 3 above. FIG. 4 is a sectional view showing a second embodiment of the heat treatment apparatus according to the present invention. The same components as those shown in FIGS. 1 to 4 are denoted by the same reference numerals, and the description thereof is omitted.

  In the second embodiment, the dummy wafer 102 as the dummy object to be processed is supported below the semiconductor wafer W so as to face the semiconductor wafer W, and further below this, that is, A second heating unit 28 </ b> B for heating the simulated wafer 102 is provided on the bottom 6 </ b> B of the processing container 6. Specifically, a large-diameter opening 22B is formed in the bottom 6B of the processing container 6, and the opening 22B is made of, for example, a transparent quartz plate via a seal member 24B such as an O-ring. The second irradiation window 26B is attached and fixed in an airtight manner.

  And the 2nd heating means 28B is provided in the outer side of the said 2nd irradiation window 26B. The second heating means 28B has a lamp house 30B whose inner surface is a reflecting surface. In the lamp house 30B, a plurality of heating lamps 32B made of, for example, a halogen lamp made of a straight tube are flattened. The dummy wafers 102 are arranged in a row so that the dummy wafer 102 can be heated by the radiated light (heat rays) from these heating lamps 32B.

  A spherical lamp may be used as the halogen lamp. Here, the lamp house 30B of the second heating means 28B is provided with a temperature measuring device 34 made of, for example, a pyro sensor (radiation thermometer), and the measured value is a temperature control unit 36 made of, for example, a microcomputer. The semiconductor wafer can be controlled to a predetermined temperature by controlling the input power to the second heating means 28B based on the measured value. In this case, the second heating unit 28B may be concentrically divided into, for example, an inner circumferential zone and an outer circumferential zone so that the temperature can be individually controlled for each zone.

  That is, here, the temperature measuring device 34 measures the temperature of the back surface of the simulated wafer 102, and the temperature control unit 36 controls both the first and second heating means 28A and 28B based on the measured value. I am doing so. In this case, the first and second heating means 28A, 28B are controlled so as to emit irradiation light having the same heat amount, that is, mirroring control is performed. Accordingly, the wattage of the heating lamps 32A and 32B of the first and second heating means 28A and 28B is set to be the same, and the distance L2 between the semiconductor wafer W and the second irradiation window 26B is The distance L1 between the pseudo wafer 102 and the first irradiation window 26A is set to the same value, and the thermal conditions are set to be the same.

  In this case, in order to support the dummy wafer 102, the mounting plate 44 is provided with a plurality of support rods 104 made of, for example, quartz extending horizontally in the center direction. For example, three support rods 104 (only two are shown in the illustrated example) are provided at equal intervals along the circumferential direction of the mounting plate 44, and the tip portions thereof are bent upward in an L shape. . The disk-shaped dummy wafer 102 is horizontally supported at the tip of each support rod 104. The dummy wafer 102 is formed to have the same form as the semiconductor wafer W.

Specifically, for example, a silicon wafer having the same diameter and thickness as the semiconductor wafer W can be used as the pseudo wafer 102. In addition, a silicon wafer (bare wafer) having nothing formed on the surface is transparent to wavelengths in the infrared region, so that it absorbs the wavelengths in this region and is heated in the same manner as the semiconductor wafer W. In addition, a coating film made of SiN, SiO ₂ or the like is formed on the surface of the pseudo wafer 102.

  On the simulated wafer 102, for example, three (only two are shown in FIG. 4) support pin members 106 are attached by welding or the like at equal intervals along the circumferential direction. The semiconductor wafer W is supported by the upper end portion of each support pin member 106. As a result, the dummy wafer 102 is arranged in parallel to the semiconductor wafer W.

  A lift pin 108 erected upward is attached to the tip of each support arm 62 extending from the lifting plate 42. The lift pins 108 are provided so as to penetrate upward through the pin holes 110 formed in the dummy wafer 102. By lifting and lowering the lift pins 108, the semiconductor wafer W is pushed upward to deliver the semiconductor wafer W. Can be done.

  Accordingly, the lift pins 108 are configured as a part of the lifting mechanism 40 that lifts the semiconductor wafer. Also in this case, the above-mentioned film deposition preventing member 80, which is a feature of the present invention, is provided below the first irradiation window 26A. The configuration and deformation mode of the film deposition preventing member 80 are as described above with reference to FIGS.

  In the second embodiment configured as described above, so-called mirroring control is performed as the temperature control during the annealing process of the semiconductor wafer W. That is, the temperature is controlled by feedback while monitoring the temperature of the dummy wafer 102 by the temperature detector 34 such that the dummy wafer 102 has a desired temperature by the second heating unit 28B. At this time, so-called mirroring control is performed so that the electric power supplied to the first heating means 28A at the ceiling and the second heating means 28B at the bottom are exactly the same. Thereby, the temperature of the semiconductor wafer W can be controlled to be the same as the temperature of the dummy wafer 102, and as a result, the temperature of the semiconductor wafer W can be maintained at a desired temperature.

  Actually, due to the difference in the light absorption rate between the semiconductor wafer W and the dummy wafer 102, the power supplied to the upper and lower first and second heating means 28A, 28B is not exactly the same. There is a deviation of the offset value. The reason for performing the mirroring control in this way is that the back surface of the dummy wafer 102 is optically stable, whereas the semiconductor wafer W is loaded with various processes performed in the previous process. Therefore, optically constant things are not always carried in, and it is difficult to accurately detect the temperature of such a semiconductor wafer W with the temperature detector 34 composed of a radiation thermometer.

  Also in the case of the second embodiment, since the film deposition preventing member 80 is provided, it is possible to exert substantially the same effect as the first embodiment. That is, by providing the light-shielding portion 86 that partially or completely blocks the transmission of heat rays to the film deposition preventing member 80, it is possible to prevent the irradiation window (first irradiation window 26A) from being fogged. In-plane uniformity of the thickness of the thin film after the heat treatment can be maintained high.

<Third Embodiment>
Next, a third embodiment of the present invention will be described.
In the previous first and second embodiments, when attaching the film deposition preventing member 80 to the ceiling portion 6A of the processing container 6, the space 90 was formed between the first irradiation window 26A, It is not limited to this, You may make it provide both closely_contact | adhering. FIG. 5 is an enlarged cross-sectional view showing the main part of the third embodiment of the heat treatment apparatus according to the present invention, and the other parts are configured as shown in FIGS. Here, the same reference numerals are given to the same components as those shown in FIGS.

  As shown in FIG. 5, in this third embodiment, the film deposition member 80 is attached in close contact with the lower surface of the first irradiation window 26 </ b> A, and this film deposition member 80 is tightened with a bolt 84. The holding plate 114 is detachably fixed. In this case, since the space 90 is not formed, it is not necessary to provide the pressure adjusting communication path 92 (see FIG. 1) for preventing the film deposition preventing member 80 from being damaged by the pressure difference.

  In the third embodiment, all of the techniques described in the first and second embodiments can be applied, and the operational effects described in the first and second embodiments can be exhibited.

<Fourth and fifth embodiments>
Next, fourth and fifth embodiments of the present invention will be described.
In the first to third embodiments, the film deposition preventing member 80 is formed in a disk shape having a size so as to cover the entire lower surface of the first irradiation window 26A. In the embodiment, the size is set to correspond to a part of the surface of the semiconductor wafer W. Specifically, in the fourth embodiment, the film deposition preventing member 80 has a diameter substantially equal to that of the semiconductor wafer W, but is formed in a circular ring shape, and in the fifth embodiment, the diameter is considerably smaller than that of the semiconductor wafer W. It has a disc shape.

  FIG. 6 is an enlarged sectional view showing the main part of the fourth embodiment of the heat treatment apparatus according to the present invention, FIG. 7 is a plan view showing the film deposition member used in the fourth embodiment, and FIG. 8 is as described above. FIG. 9 is an enlarged cross-sectional view showing a main part of a fifth embodiment of the heat treatment apparatus according to the present invention, and FIG. 9 is a plan view showing a film deposition preventing member used in the fifth embodiment.

  Thus, unlike the first to third embodiments in which the film deposition preventing member is provided on the entire lower surface of the first irradiation window 26A, the first irradiation window 26A is provided so as to cover a part thereof. The reason is that, according to the experiment, depending on the type of film to be annealed and the annealing conditions, an unnecessary thin film is not deposited on the entire surface in a state where the film thickness is uniform on the lower surface of the first irradiation window 26, but the film thickness is shifted. This is because there is a case where it adheres and accumulates. That is, in this case, if the unnecessary adhesion film is prevented from being deposited in the region where the film thickness of the unnecessary adhesion film tends to be particularly thick, the film deposition preventing member 80 is made to be the first. This is because it is not necessary to provide the entire surface of the irradiation window 26A.

  Specifically, in the case of the fourth embodiment shown in FIGS. 6 and 7, as the film deposition preventing member 80, a circular ring-shaped quartz glass plate 120 whose outer diameter is substantially the same as that of the first irradiation window 26 </ b> A. Used. The width W1 of the quartz glass plate 120 is determined by the film thickness distribution of an unnecessary adhesion film deposited on the first irradiation window 26A. The fourth embodiment is used when an annealing process is performed in which an unnecessary thin film is deposited particularly thickly on the periphery of the lower surface of the first irradiation window 26A.

  In this case, as shown in FIG. 7A, the entire circular ring-shaped quartz glass plate 120 may be used as the light-shielding portion 86, and conversely, as shown in FIG. The entire quartz glass plate 120 may be used as the transmission region 88.

  In the fourth embodiment, all of the techniques described in the first to third embodiments can be applied, and the operational effects described in the first to third embodiments can be exhibited. In the fourth embodiment, the size corresponding to a part of the surface of the object to be processed is provided between the support means 38 for supporting the semiconductor wafer W as the object to be processed and the irradiation window (first irradiation window 26A). By providing the film-adhering member 80 made of the quartz glass plate 120 set to 1), for example, the film-adhering member can be provided locally corresponding to the region where a large amount of the substance released from the object reaches, It is possible to suppress the occurrence of fogging on the irradiation window while maintaining high efficiency. However, in the case of the fourth embodiment, it is inevitable that a slightly unnecessary film is deposited at the center of the first irradiation window 26A, but at the center of the circular ring-shaped quartz glass plate 120, Since nothing is provided, there is no absorption of heat rays in this portion, and the heating efficiency of the semiconductor wafer can be increased correspondingly.

  Further, in the case of the fifth embodiment shown in FIGS. 8 and 9, contrary to the previous fourth embodiment, the outer diameter of the film deposition preventing member 80 is considerably smaller than that of the first irradiation window 26A. A circular quartz glass plate 124 is used. The small circular quartz glass plate 124 is positioned corresponding to the center of the first irradiation window 26A by a plurality of, for example, three support arms 126 extending from the ceiling 6A toward the center of the opening 22A. It is supported by. The diameter W2 of the quartz glass plate 124 is determined by the film thickness distribution of unnecessary films deposited on the first irradiation window 26A.

  The fifth embodiment is used when an annealing process is performed in which an unnecessary thin film is deposited particularly thickly at the center of the lower surface of the first irradiation window 26. In this case, as shown in FIG. 9A, the entire circular quartz glass plate 124 may be used as the light-shielding portion 86, and conversely, as shown in FIG. The entire glass plate 124 may be used as the transmission region 88.

  In the fifth embodiment, all of the techniques described in the first to third embodiments can be applied, and the operational effects described in the first to third embodiments can be exhibited. In the fifth embodiment, a size corresponding to a part of the surface of the object to be processed is provided between the support means 38 for supporting the semiconductor wafer W as the object to be processed and the irradiation window (first irradiation window 26A). By providing the film-adhering member 80 made of the quartz glass plate 124 set in the above-described manner, for example, the film-adhering member can be provided locally corresponding to a region where a large amount of the substance released from the object reaches, It is possible to suppress the occurrence of fogging on the irradiation window while maintaining high efficiency. However, in the case of the fifth embodiment, it is inevitable that a slightly unnecessary film is deposited on the periphery of the first irradiation window 26A, but on the periphery of the small circular quartz glass plate 124, Since nothing is provided, there is no absorption of heat rays in this portion, and the heating efficiency of the semiconductor wafer can be increased correspondingly.

<Sixth Embodiment>
Next, a sixth embodiment of the present invention will be described.
In the previous first to fifth embodiments, the film deposition preventing member 80 is provided in order to prevent an unnecessary film from adhering to the surface of the first irradiation window 26A. Without using the film adhesion preventing member 80, the installation position of the semiconductor wafer and the dummy wafer is changed up and down, thereby making the dummy wafer also function as the film adhesion preventing member. The sixth embodiment is a modified embodiment of the second embodiment shown in FIG. 4 that performs mirroring control.

  FIG. 10 is a sectional view showing a sixth embodiment of the heat treatment apparatus of the present invention. The same components as those shown in FIGS. 1 to 4 are denoted by the same reference numerals, and the description thereof is omitted. In the sixth embodiment, as described above, the film deposition preventing member 80 as described above is not provided, and the installation positions of the semiconductor wafer and the dummy wafer 102 are switched upside down. The dummy wafer 102 is placed immediately above the semiconductor wafer W.

  That is, the semiconductor wafer W is supported by the support pins 64 provided at the tips of the support arms 62 extending from the elevating plate 42 as in the first embodiment shown in FIG. In this case, the length of the support pin 64 is set slightly shorter than that in the case of FIG. The dummy wafer 102 positioned above the semiconductor wafer W is supported by a plurality of support arms 128 extending from the side wall of the processing container 6. Therefore, the dummy wafer 102 is heated by the first heating means 28A located above, and the semiconductor wafer W is heated by the second heating means 28B installed below. The temperature measuring device 34 is provided on the first heating means 28A side and measures the temperature on the upper surface side of the simulated wafer 102. The temperature control unit 36 performs mirroring control. Become.

  Accordingly, in this case, the distance L3 between the simulated wafer 102 and the upper first irradiation window 26A, and the distance L4 between the semiconductor wafer W and the lower second irradiation window 26B. Are set to be the same.

  In the case of the sixth embodiment, the temperature measuring device 34 measures the temperature of the upper surface of the dummy wafer 102, and the mirroring control as described in the second embodiment shown in FIG. Is called. In this case, the substance generated from the thin film of the semiconductor wafer W during the annealing process rises as indicated by an arrow 130 and adheres to the lower surface (back surface) of the dummy wafer 102. Therefore, an unnecessary film does not adhere to the surface (upper surface) of the first irradiation window 26A, and fogging can be prevented from occurring.

  For the reason described above, an unnecessary film is not deposited on the upper surface of the dummy wafer 102 to be measured by the temperature measuring device 34 including the radiation thermometer. Therefore, the surface state of the upper surface of the dummy wafer 102 is as follows. It is always kept stable, and the accuracy of this temperature measurement can be kept high.

  As described above, according to the sixth embodiment, the dummy wafer 102 as the dummy object to be processed is disposed above the semiconductor wafer W as the object to be processed, and the temperature on the upper surface side of the dummy wafer 102 is set. Since the so-called mirroring control is performed while measuring, the substance generated from the thin film of the semiconductor wafer can be deposited on the lower surface (back surface) of the simulated wafer, and thus the above-mentioned film deposition preventing member 80 is used. Therefore, it is possible to prevent the first irradiation window 26A from being fogged due to an unnecessary attached film.

  In each of the embodiments described above, the heating lamps 32A and 32B are used as the heating means 28A and 28B. However, the present invention is not limited to this, and scanning may be performed using laser light.

The thin film to be annealed is any film type that causes unnecessary film adhesion due to heating, and the present invention can be applied to a heat treatment apparatus in which such a film type is formed. it can.
Although the semiconductor wafer is described as an example of the object to be processed here, the present invention is not limited thereto, and the present invention can be applied to a glass substrate, an LCD substrate, a ceramic substrate, and the like.

It is sectional drawing which shows 1st Embodiment of the heat processing apparatus which concerns on this invention. It is a top view which shows the film | membrane prevention member used for the heat processing apparatus shown in FIG. It is a figure which shows the relationship between the change of the film thickness currently formed in to-be-processed object, and the film | membrane protection member to be used. It is sectional drawing which shows 2nd Embodiment of the heat processing apparatus which concerns on this invention. It is an expanded sectional view which shows the principal part of 3rd Embodiment of the heat processing apparatus which concerns on this invention. It is an expanded sectional view which shows the principal part of 4th Embodiment of the heat processing apparatus which concerns on this invention. It is a top view which shows the film | membrane prevention member used in 4th Embodiment. It is an expanded sectional view which shows the principal part of 5th Embodiment of the heat processing apparatus which concerns on this invention. It is a top view which shows the film | membrane prevention member used in 5th Embodiment. It is sectional drawing which shows 6th Embodiment of the heat processing apparatus of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 4 Heat processing apparatus 6 Processing container 12 Gas supply means 20 Exhaust means 26A 1st irradiation window 26B 2nd irradiation window 28A 1st heating means 28B 2nd heating means 32A, 32B Heating lamp 34 Temperature measuring device 36 Temperature control part Reference Signs List 38 Support means 40 Lifting mechanism 46 Rotating mechanism 80 Film adhesion member 82 Quartz glass plate 86 Light shielding part 88 Transmission region 90 Space 92 Pressure adjustment communication path 100 Thin film 102 摸 Pseudo wafer (Pseudo target object)
120 Circular ring-shaped quartz glass plate 124 Small circular quartz glass plate W Semiconductor wafer (object to be processed)

Claims (21)

In a heat treatment apparatus for performing a predetermined heat treatment on a workpiece,
A processing container capable of accommodating the object to be processed;
Supporting means for supporting the object to be processed;
A first irradiation window provided on the ceiling of the processing container;
A first heating means that is provided outside the first irradiation window and emits heat rays for heating;
Gas supply means for supplying a predetermined gas into the processing container;
Exhaust means for exhausting the atmosphere in the processing vessel;
A film-adhering member provided between the support means and the first irradiation window and having a light-shielding portion formed on a part of or all of the heat rays;
A heat treatment apparatus comprising: The heat treatment apparatus according to claim 1, wherein the film deposition preventing member includes a quartz glass plate. 3. The heat treatment apparatus according to claim 1, wherein the light shielding portion is formed in a ring shape at a peripheral portion of the film deposition preventing member. 3. The heat treatment apparatus according to claim 1, wherein the light shielding portion is formed in a circular shape at a central portion of the film deposition preventing member. 5. The heat treatment apparatus according to claim 2, wherein the light shielding portion is in an opaque glass state. The film deposition preventing member is formed with a pressure adjusting communication path communicating with a space defined between the lower surface of the first irradiation window and the upper surface of the film deposition preventing member. The heat treatment apparatus according to any one of claims 1 to 5. In a heat treatment apparatus for performing a predetermined heat treatment on a workpiece,
A processing container capable of accommodating the object to be processed;
Supporting means for supporting the object to be processed;
A first irradiation window provided on the ceiling of the processing container;
A first heating means that is provided outside the first irradiation window and emits heat rays for heating;
Gas supply means for supplying a predetermined gas into the processing container;
Exhaust means for exhausting the atmosphere in the processing vessel;
A film deposition preventing member provided between the support means and the first irradiation window and set to a size corresponding to a part of the surface of the workpiece;
A heat treatment apparatus comprising: The film deposition preventing member is formed in a ring shape having a size corresponding to a peripheral portion of the object to be processed, and the film deposition preventing member has quartz glass formed in a ring shape. 8. The heat treatment apparatus according to 7. 8. The film deposition preventing member is formed in a circular shape having a size corresponding to a central portion of the object to be processed, and the film deposition preventing member has a disk-shaped quartz glass. The heat treatment apparatus as described. The heat treatment apparatus according to claim 8 or 9, wherein the quartz glass is made transparent. The heat treatment apparatus according to claim 8 or 9, wherein the quartz glass is in an opaque state in order to block part or all of the heat rays. The heat treatment apparatus according to claim 1, wherein the heating unit includes a heating lamp. The heat treatment apparatus according to any one of claims 1 to 11, wherein the predetermined heat treatment is an annealing treatment for heating a thin film formed on a surface of the object to be treated. In a heat treatment apparatus for performing a predetermined heat treatment on a workpiece,
A processing container capable of accommodating the object to be processed;
Supporting means for supporting the object to be processed;
A counterfeit workpiece to be supported above the workpiece and to face the workpiece;
A first irradiation window provided on the ceiling of the processing container;
A first heating means that is provided outside the first irradiation window and emits heat rays for heating;
A second irradiation window provided at the bottom of the processing container;
Second heating means that is provided outside the second irradiation window and emits heat rays for heating;
Gas supply means for supplying a predetermined gas into the processing container;
Exhaust means for exhausting the atmosphere in the processing vessel;
A temperature measuring device for measuring the temperature of the dummy workpiece,
A temperature controller for controlling the first and second heating means based on the measurement value of the temperature measuring device;
A heat treatment apparatus comprising: The heat treatment apparatus according to claim 14, wherein the temperature measuring device is a radiation thermometer provided to face an upper surface of the simulated workpiece. 16. The heat treatment apparatus according to claim 14, wherein the support means includes a rotation mechanism that rotates the object to be processed. The heat treatment apparatus according to any one of claims 14 to 16, wherein the simulated workpiece is fixedly provided. The distance between the simulated object to be processed and the first heating means is set to be the same as the distance between the object to be processed and the second heating means. The heat treatment apparatus according to any one of claims 14 to 17. The heat treatment according to any one of claims 14 to 18, wherein the temperature control unit controls the first heating unit and the second heating unit to emit the same amount of heat. apparatus. The heat treatment apparatus according to any one of claims 14 to 19, wherein the heating unit includes a heating lamp. The heat treatment apparatus according to any one of claims 14 to 20, wherein the predetermined heat treatment is an annealing treatment for heating a thin film formed on a surface of the object to be treated.

Images