JP2007005399A - Substrate processing apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To keep the uniformity of in-plane temperature distribution of a wafer and prevent a stray light on the periphery of the wafer. <P>SOLUTION: In an RTP apparatus using heating lamps 85 and 86, a circular-ring like light shielding part 99 of which outside diameter is larger than that of a wafer W is projected upward, being inclined at the upper end of an opening 98a in an inner platform 98 constituting a holding member 101, and a plurality of supporting pins 100 are projected to float and support the wafer W within the opening 98a. A stray light on the periphery of the wafer can be blocked by the light shielding part to prevent the drop of measuring accuracy of a radiation thermometer. In addition, the light of a heating lamp is given to the entire surface of the wafer in the opening so as to heat it, so that the uniformity of in-plane temperature distribution of the wafer can be kept. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a substrate processing apparatus, and more particularly to a technique for heating a substrate to be processed. For example, in a manufacturing method of a semiconductor integrated circuit device (hereinafter referred to as an IC), a semiconductor in which an integrated circuit including a semiconductor element is built. The present invention relates to a wafer (hereinafter, referred to as a wafer) that is effective for applying various thermal treatments such as film formation, annealing, oxide film growth, and diffusion.

As a substrate processing apparatus that performs various heat treatments such as film formation, annealing, oxide film growth, and diffusion in an IC manufacturing method, RTP (Rapid) using a tungsten-halogen linear lamp (hereinafter referred to as a heating lamp) as a heating source. Thermal processing equipment.
The RTP apparatus includes a processing chamber for storing a wafer as a substrate to be processed, a holding member (hereinafter referred to as a susceptor) for holding the wafer in the processing chamber, and a plurality of wafers that heat the wafer on the susceptor from below the susceptor. A heating lamp, a temperature measuring device installed above the susceptor to measure the temperature of the wafer, an exhaust port for exhausting the processing chamber slightly below atmospheric pressure, and a susceptor rotation for rotating the susceptor holding the wafer Device.

And as this kind of conventional RTP apparatus, there exists what used the radiation thermometer for the temperature measuring apparatus (for example, refer patent document 1).
Japanese Patent No. 3018246

In the RTP device using the radiation thermometer described above, when the irradiation light from the heating lamp (electromagnetic wave in the visible to infrared region, hereinafter referred to as light) leaks upward, the leaked light (so-called stray light) is emitted. Since a thermometer picks up, there exists a problem that the measurement precision of temperature falls.
By the way, in such an RTP apparatus, a light-transmitting window is formed on the susceptor by using a light-transmitting material such as quartz so that the light irradiated from the heating lamp can be efficiently transmitted to the wafer. In some cases, the light is transmitted through the wafer, or a light transmitting hole is formed in the susceptor to directly irradiate the wafer with light from a heating lamp.
In these cases, in order to maintain the uniformity of the in-plane temperature distribution of the wafer, the entire surface of the wafer needs to be irradiated with light from a heating lamp. At the same time, it is necessary to prevent the generation of stray light from the outer edge of the wafer.
In such a case, giving priority to maintaining the uniformity of the in-plane temperature distribution of the wafer, if the transparent window of the susceptor and the transparent hole of the susceptor are matched to the outer shape of the wafer, the wafer is transferred to the susceptor. Even if a slight misalignment or a slight processing error occurs in the light-transmitting window or light-transmitting hole, the measurement accuracy of the radiation thermometer decreases because the light from the heating lamp leaks from the outer edge of the wafer. There is a problem that.
Conversely, if priority is given to preventing the generation of stray light from the outer edge of the wafer, and the light transmission window and light transmission hole of the susceptor are set to be smaller than the outer shape of the wafer, the temperature at the peripheral edge of the wafer will be reduced. Since it is lowered by the light shielding effect and heat conduction effect at the peripheral edge of the light hole, there is a problem that the uniformity of the in-plane temperature distribution of the wafer is lowered.
It is known that when the temperature of the wafer rises, warping occurs. However, when the wafer warps, stray light is generated at the outer edge of the wafer, so that the measurement accuracy of the radiation thermometer decreases.

  An object of the present invention is to provide a substrate processing apparatus that can maintain the uniformity of the in-plane temperature distribution of the substrate to be processed and can prevent the generation of stray light from the outer edge of the substrate to be processed. .

A substrate processing apparatus according to the present invention includes a processing chamber that provides a space for processing a substrate,
A heating means provided on one side of the processing position of the substrate placed in the processing chamber during processing of the substrate;
Temperature measuring means provided on the other side of the processing position for measuring the temperature of the substrate;
Holding means for holding the substrate at the processing position;
A light shielding member having a substantially circular opening provided on the outer peripheral side of the substrate in a non-contact state with the substrate held at the processing position;
A substrate processing apparatus comprising:
An end face of the light shielding member on the opening side is inclined toward the direction of the temperature measuring means.

According to the above-described means, stray light on the outer edge of the substrate to be processed can be shielded by the light shielding member, and therefore, for example, it is possible to prevent a decrease in measurement accuracy of the radiation thermometer.
At this time, since the end surface on the opening side of the light shielding member is inclined toward the temperature measuring means, the light reflected by the end surface of the light shielding member is in a state of heating the peripheral portion of the substrate to be processed. In addition, it is possible to prevent a temperature drop in the periphery of the substrate to be processed, and to maintain the uniformity of the in-plane temperature distribution of the substrate to be processed.

  Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

In the present embodiment, the substrate processing apparatus according to the present invention is configured as a multi-chamber processing apparatus (hereinafter referred to as a processing apparatus) as shown in FIG. In the manufacturing method, an insulating film such as silicon oxide or silicon nitride is formed on the wafer, an alloy film of metal and silicon is formed, or an annealing process is performed to activate impurity atoms implanted in the film. It is used for the process to perform.
In the processing apparatus according to the present embodiment, a FOUP (front opening unified pod, hereinafter referred to as a pod) is used as a carrier for wafer transfer.
In the following description, front, rear, left and right are based on FIG. That is, with respect to the paper surface shown in FIG. 1, the front is below the paper surface, the rear is above the paper surface, and the left and right are the left and right sides of the paper surface.

As shown in FIG. 1, the processing apparatus has a first wafer transfer chamber (hereinafter referred to as a negative pressure transfer chamber) configured in a load lock chamber structure that can withstand a pressure (negative pressure) less than atmospheric pressure. 10, a housing 11 of the negative pressure transfer chamber 10 (hereinafter referred to as a negative pressure transfer chamber housing) 11 is formed in a box shape having a hexagonal shape in plan view and closed at both upper and lower ends.
A wafer transfer device (hereinafter referred to as a negative pressure transfer device) 12 for transferring the wafer W under a negative pressure is installed at the center of the negative pressure transfer chamber 10. The negative pressure transfer device 12 is a scalar. It is comprised by the type robot (selective compliance assembly robot arm SCARA), and it is comprised so that it may raise / lower, maintaining an airtight seal with the elevator 13 installed in the bottom wall of the negative pressure transfer chamber housing | casing 11. FIG.

Of the six side walls of the negative pressure transfer chamber casing 11, two side walls located on the front side are provided with a carry-in spare chamber (hereinafter referred to as a carry-in chamber) 20 and a carry-out spare chamber (hereinafter referred to as a carry-out chamber). 30) are connected adjacent to each other.
The housing 21 of the carry-in chamber 20 (hereinafter referred to as the carry-in chamber housing) 21 and the housing of the carry-out chamber 30 (hereinafter referred to as the carry-out chamber housing) 31 are each substantially rectangular in plan view and closed at both upper and lower ends. Each load lock chamber structure is formed in a box shape and can withstand negative pressure.
Carry-in ports 22 and 23 are respectively provided in the side wall of the loading chamber housing 21 and the side wall of the negative pressure transfer chamber housing 11 which are adjacent to each other. A gate valve 24 that opens and closes 22 and 23 is provided. In the carry-in chamber 20, a temporary storage table 25 for the carry-in chamber is installed.
Unloading ports 32 and 33 are respectively provided on the side wall of the unloading chamber housing 31 and the side wall of the negative pressure transfer chamber housing 11 that are adjacent to each other, and the unloading port 33 on the negative pressure transfer chamber 10 side has an unloading port. A gate valve 34 that opens and closes 32 and 33 is provided. In the carry-out chamber 30, a temporary storage table 35 for the carry-out chamber is installed.

On the front side of the carry-in chamber 20 and the carry-out chamber 30 is a second wafer transfer chamber (hereinafter referred to as a positive pressure transfer chamber) 40 configured to maintain a pressure (positive pressure) that is equal to or higher than atmospheric pressure. The casing 41 of the positive pressure transfer chamber 40 (hereinafter referred to as a positive pressure transfer chamber casing) 41 is adjacently connected, and is formed in a box shape having a horizontally long rectangle in a plan view and closed at both upper and lower ends. Yes.
The positive pressure transfer chamber 40 is provided with a second wafer transfer device (hereinafter referred to as a positive pressure transfer device) 42 for transferring the wafer W under positive pressure. The positive pressure transfer device 42 is a scalar. A wafer can be transferred by a robot.
The positive pressure transfer device 42 is configured to be moved up and down by an elevator 43 installed in the positive pressure transfer chamber 40 and is configured to be reciprocated in the left-right direction by a linear actuator 44.

Carriage entrances 26 and 27 are respectively formed on the side wall of the carry-in chamber housing 21 and the side wall of the positive pressure transfer chamber housing 41 that are adjacent to each other. A gate valve 28 that opens and closes 26 and 27 is provided.
Unloading ports 36 and 37 are respectively opened on the side wall of the unloading chamber housing 31 and the side wall of the positive pressure transfer chamber housing 41 which are adjacent to each other, and the unloading port 37 on the positive pressure transfer chamber 40 side has an unloading port. A gate valve 38 that opens and closes 36 and 37 is provided.
As shown in FIG. 1, a notch aligning device 45 is installed on the left side of the positive pressure transfer chamber 40.

As shown in FIG. 1, three wafer loading / unloading ports 47, 48, and 49 are arranged in the left-right direction on the front wall of the positive pressure transfer chamber housing 41, and the three wafer loading / unloading ports are opened. The unloading ports 47, 48, and 49 are set so that the wafer W can be loaded into and unloaded from the positive pressure transfer chamber 40. A pod opener 50 is installed at each of the three wafer loading / unloading ports 47, 48 and 49.
The pod opener 50 includes a mounting table 51 for mounting the pod P, and a cap attaching / detaching mechanism 52 for mounting and removing the cap of the pod P mounted on the mounting table 51, and the pod P mounted on the mounting table 51. The cap insertion / removal mechanism 52 is used to open / close the pod P wafer opening / closing port.
The pod P is supplied to and discharged from the mounting table 51 of the pod opener 50 by an in-process transfer device (RGV) (not shown). Therefore, the mounting table 51 constitutes a pod stage as a carrier stage.

As shown in FIG. 1, two side walls located on the back side among the six side walls of the negative pressure transfer chamber housing 11 have a first processing unit 61 as a first processing unit, A second processing unit 62 as a second processing unit is connected adjacently.
Each of the first processing unit 61 and the second processing unit 62 is configured by a single-wafer type decompression RTP device (hereinafter referred to as an RTP device).
The remaining two opposite side walls of the six side walls in the negative pressure transfer chamber housing 11 have a first cooling unit 63 as a third processing unit and a second cooling unit as a fourth processing unit. Two cooling units 64 are connected to each other, and both the first cooling unit 63 and the second cooling unit 64 are configured to cool the processed wafer W.

As shown in FIG. 2, the RTP apparatus 70 includes a casing 72 in which a processing chamber 71 for processing the wafer W is formed. The casing 72 is a cup 73 formed in a cylindrical shape with upper and lower surfaces opened. The disk-shaped top plate 74 that closes the upper surface opening of the cup 73 and the disk-shaped bottom plate 75 that closes the lower surface opening of the cup 73 are combined to form a hollow cylindrical body. The housing 72 can be formed of various metals. Although not shown, the casing 72 is configured to be water-cooled to about room temperature by a known circulating cold water flow system.
An exhaust port 76 is formed in a part of the side wall of the cup 73 so as to communicate with the inside and outside of the processing chamber 71, and the processing chamber 71 is exhausted to less than atmospheric pressure (hereinafter referred to as negative pressure) through the exhaust port 76. A possible exhaust device is connected.
The exhaust port 76 is also opened on the center line of the bottom plate 75.
A wafer loading / unloading port 77 for loading / unloading the wafer W into / from the processing chamber 71 is opened at a position opposite to the exhaust port 76 on the side wall of the cup 73, and the wafer loading / unloading port 77 is opened and closed by a gate valve 78. It has come to be.

An elevating drive device 79 is installed on the center line of the lower surface of the bottom plate 75, and the elevating drive device 79 is configured to elevate the elevating shaft 80. The elevating shaft 80 is inserted through the bottom plate 75 in the vertical direction and is slidably supported.
An elevating plate 81 is horizontally fixed to the upper end of the elevating shaft 80, and a plurality of (usually three or four) lifter pins 82 are vertically fixed and fixed to the upper surface of the elevating plate 81. Each lifter pin 82 is moved up and down as the elevating plate 81 is moved up and down to support and lift the wafer W horizontally from below.

A support cylinder 83 protrudes outside the lifting shaft 80 on the upper surface of the bottom plate 75, and a cooling plate 84 is installed horizontally on the upper end face of the support cylinder 83.
Above the cooling plate 84, a first heating lamp group 85 and a second heating lamp group 86 composed of a plurality of heating lamps are arranged in order from the bottom and are installed horizontally, respectively. 85 and the second heating lamp group 86 are horizontally supported by a first support 87 and a second support 88, respectively.
The first heating lamp group 85 and the second heating lamp group 86 are constituted by a plurality of heating lamps (tungsten-halogen linear lamps) as heating sources, arranged in parallel to each other and horizontally installed.
Although not shown, the first heating lamp group 85 and the second heating lamp group 86 have four zones respectively set from both ends to the center. The first heating lamp group 85 and the second heating lamp group 86 are connected in parallel to the controller for each of the first zone to the fourth zone, and the controller is a controller (not shown) to which a radiation thermometer described later is connected. ) Is feedback controlled.
The power supply wires 89 of the first heating lamp group 85 and the second heating lamp group 86 are inserted through the bottom plate 75 and drawn to the outside.
The heater assembly including the first heating lamp group 85, the second heating lamp group 86, the controller, and the like emits radiant heat rays (light) having a radiation peak of 0.95 μm in wavelength, and a lot of heat is emitted from the central zone. Is also set to exhibit a heating profile applied to the peripheral zone.

A turret 91 formed in a cylindrical shape having an outer diameter smaller than the inner diameter of the processing chamber 71 is disposed in the processing chamber 71 concentrically. The turret 91 is made of graphite or the like coated with silicon graphite, more preferably ceramic or graphite.
The turret 91 is concentrically disposed and fixed on the upper surface of a circular ring-shaped internal spur gear 93, and the internal spur gear 93 is horizontally supported by a bearing 92 interposed in the bottom plate 75. A driving-side spur gear 94 is engaged with the internal spur gear 93, and the driving-side spur gear 94 is horizontally supported by a bearing 95 interposed in the bottom plate 75 and installed below the bottom plate 75. The holding member rotating device 96 is rotationally driven.
Note that the rotational speed of the turret 91 is preferably set to 5 to 60 rpm in accordance with various processing conditions.

An outer platform 97 formed in a circular ring shape is horizontally installed on the upper end surface of the turret 91, and an inner platform 98 as a light shielding member is horizontally installed inside the outer platform 97. The outer platform 97 and the inner platform 98 are made of silicon carbide (SiC), and the inner platform 98 is formed in a circular ring shape in which the inner diameter of the opening 98a is sufficiently larger than the outer diameter of the wafer W. .
As shown in FIG. 3, a circular ring-shaped light shielding portion 99 protrudes at an upper end portion of the opening 98 a of the inner platform 98 so as to gradually rise inward from the inner peripheral surface. The inner diameter of the light-shielding portion 99 is set slightly larger than the outer diameter of the wafer W.
On the lower surface of the inner platform 98, four support pins 100 formed in a rod shape and bent into a concave shape by a material having translucency such as quartz are projected so as to protrude inside the opening 98a. The upper ends of the four support pins 100 are aligned so as to form a horizontal plane in the internal space of the opening 98a of the inner platform 98.
That is, the outer platform 97, the inner platform 98, and the four support pins 100 constitute a holding member 101 as a holding unit for holding the wafer W, and the wafer W is held by the holding member 101 with four support pins. 100 is held horizontally.
As another embodiment of the support pin 100, a rod (made of quartz or the like) standing from the center of the bottom plate 75 and three to four branches (made of quartz or the like) from the rod are radially formed. Provide. The wafer W may be held at the tip of the branch.

As shown in FIG. 2, the source gas supply pipe 102 and the inert gas supply pipe 103 are connected to the top plate 74 so as to communicate with the processing chamber 71.
A plurality of radiation thermometer probes 104 as temperature measuring devices are arranged on the top plate 74 so as to be displaced from each other in the radial direction from the center to the periphery of the wafer W so as to face the upper surface of the wafer W. The radiation thermometer is configured to sequentially transmit a measured temperature based on the light detected by each of the plurality of probes 104 to the controller.
An emissivity measuring device 105 that measures the emissivity of the wafer W in a non-contact manner is installed at another location on the top plate 74. The emissivity measuring apparatus 105 includes a reference probe 106, and the reference probe 106 is configured to be rotated in a vertical plane by a reference probe motor 107. On the upper side of the reference probe 106, a reference lamp 108 that irradiates reference light is installed so as to face the tip of the reference probe 106. The reference probe 106 is optically connected to a radiation thermometer, and the radiation thermometer calibrates the measurement temperature by comparing the photon density from the wafer W with the photon density of the reference light from the reference lamp 108. It is like that.

  Hereinafter, a film forming process in an IC manufacturing method using the processing apparatus having the above configuration will be described.

From now on, twenty-five wafers W to be deposited are transferred by the in-process transfer apparatus to the processing apparatus for performing the film forming process in a state where 25 wafers are accommodated in the pod P.
As shown in FIG. 1, the pod P that has been transported is delivered from the in-process transport device and placed on the placement base 51 of the pod opener 50 in the carry-in chamber 20.
The cap of the pod P is removed by the cap attaching / detaching mechanism 52, and the wafer loading / unloading port of the pod P is opened.
When the pod P is opened by the pod opener 50, the positive pressure transfer device 42 installed in the positive pressure transfer chamber 40 picks up the wafer W from the pod P through the wafer carry-in / out port 47 and enters the carry-in chamber 20. The wafers W are loaded (wafer loading) through 26 and 27, and the wafer W is transferred to the temporary loading table 25 for loading.
During the transfer operation, the carry-in ports 22 and 23 on the negative pressure transfer chamber 10 side are closed by the gate valve 24, and the negative pressure in the negative pressure transfer chamber 10 is maintained.
When the transfer operation of the wafer W to the temporary loading table 25 for the loading chamber is completed, the loading ports 26 and 27 on the positive pressure loading chamber 40 side are closed by the gate valve 28, and the loading chamber 20 is exhausted (not shown). ) Is exhausted to a negative pressure.

When the loading chamber 20 is depressurized to a preset pressure value, the loading ports 22 and 23 on the negative pressure transfer chamber 10 side are opened by the gate valve 24 and the wafer loading / unloading port 65 of the first processing unit 61 and Wafer loading / unloading port 77 (see FIG. 2) is opened by gate valve 78 (see FIG. 2).
Subsequently, the negative pressure transfer device 12 in the negative pressure transfer chamber 10 picks up the wafer W from the carry-in chamber temporary placement table 25 through the transfer inlets 22 and 23 and loads the wafer W into the negative pressure transfer chamber 10. The negative pressure transfer device 12 transfers the wafer W to the wafer loading / unloading port 65 of the first processing unit 61, and loads the wafer W from the wafer loading / unloading ports 65 and 77 into the processing chamber 71 of the RTP apparatus 70 as the first processing unit 61. (Wafer loading) and transfer onto the lifter pins 82 in the processing chamber 71.

  Here, the operation of the RTP device 70 according to the above configuration will be described.

When the wafer loading / unloading port 77 opened on the side wall of the cup 73 is opened by the gate valve 78, the lifting shaft 80 is raised to the upper limit position by the lifting drive device 79, and the lifter pin 82 passes through the opening 98 a of the inner platform 98. Insert from below.
Subsequently, the wafer W transferred by the negative pressure transfer device 12 is delivered between the upper ends of the plurality of lifter pins 82.
Thereafter, the negative pressure transfer device 12 that has transferred the wafer W to the lifter pins 82 moves backward.
Next, the elevating shaft 80 is lowered by the elevating driving device 79, whereby the lifter pins 82 are drawn below the holding member 101, and the wafer W on the lifter pins 82 is received between the upper ends of the four support pins 100. Passed.
At this time, since the inner diameter of the light shielding portion 99 protruding from the inner periphery of the opening 98a of the inner platform 98 is set to be larger than the outer diameter of the wafer W, the light shielding portion 99 interferes with the descending wafer W. Never do.
When the wafer W is transferred onto the support pins 100, the wafer loading / unloading port 77 is closed by the gate valve 78. When the processing chamber 71 is closed, the processing chamber 71 is exhausted through the exhaust port 76.

When the wafer W is horizontally transferred onto the four support pins 100, the turret 91 is rotated by the holding member rotating device 96 through the internal spur gear 93 and the driving side spur gear 94.
The wafer W held on the support pins 100 is heated by the first heating lamp group 85 and the second heating lamp group 86 while being rotated by the holding member rotating device 96.
The temperature of the wafer W during the heating is sequentially measured by the probe 104 of the radiation thermometer and is sequentially transmitted to the controller.
The controller executes feedback control based on the measurement result from the radiation thermometer. At this time, the measurement temperature is calibrated based on the data from the emissivity measuring apparatus 105.

Since the wafer W held on the four support pins 100 is heated by the first heating lamp group 85 and the second heating lamp group 86 while the holding member 101 is rotated by the holding member rotating device 96, the wafer W is heated. W is uniformly heat-treated over the entire surface.
Since the heat treatment rate depends on the in-plane temperature distribution of the wafer W, if the in-plane temperature distribution of the wafer W is uniform over the entire surface, the in-plane distribution of the heat treatment state applied to the wafer W is over the entire surface of the wafer W. It becomes uniform.

When a predetermined processing time set in advance elapses, the processing chamber 71 is exhausted to a predetermined negative pressure through the exhaust port 76.
Subsequently, the wafer W is lifted by a lifter pin 82 by a predetermined distance from the support pin 100 by a reverse procedure to the above, and then picked up by the negative pressure transfer device 12 from the lifter pin 82 to be stored in the processing chamber 71. It is carried outside.

By the way, when light from the first heating lamp group 85 and the second heating lamp group 86 leaks above the wafer W, the radiation thermometer probe 104 and the reference probe 106 pick up the stray light. Accuracy will be reduced.
In the present embodiment, as shown in FIG. 4, the light 110 from the first heating lamp group 85 and the second heating lamp group 86 gradually rises inward toward the opening 98 a of the inner platform 98. Since it is shielded by the light shielding portion 99 that is inclined and projecting, it does not leak upward. That is, the light 110 transmitted through the vicinity of the inner peripheral surface of the opening 98a of the inner platform 98 is absorbed by the light shielding portion 99, or leaks upward because it is reflected downward on the lower surface of the light shielding portion 99. There is no.
Therefore, since the radiation thermometer probe 104 and the reference probe 106 pick up only the radiation light 111 from the wafer W, it is possible to prevent the measurement accuracy of the radiation thermometer from being lowered.
On the other hand, since the inner diameter of the opening 98a of the inner platform 98 is set sufficiently larger than the outer diameter of the wafer W, the light 110 from the first heating lamp group 85 and the second heating lamp group 86 is Since the entire surface of the wafer W is irradiated, the wafer W is heated over the entire area including the peripheral portion.
Further, since the wafer W is supported by the four support pins 100 in the opening 98 a of the inner platform 98, the wafer W can be accommodated in the lower space of the light shielding unit 99 even when the wafer W is warped. Therefore, the light 110 from the first heating lamp group 85 and the second heating lamp group 86 can be prevented from leaking above the wafer W.

Incidentally, the wafer W is heated from below the wafer W by the first heating lamp group 85 and the second heating lamp group 86. Depending on the depth of the opening 98a relative to the wafer W, that is, the height of the side wall of the inner platform 98, Since the shadow of the opening 98a is formed on the peripheral edge of the wafer W, it is considered that the temperature of the peripheral edge of the wafer W may decrease.
However, in the present embodiment, as shown in FIG. 4, the light reflected from the lower surface of the light shielding unit 99 irradiates the peripheral portion of the wafer W, so that the temperature decrease of the peripheral portion of the wafer W is prevented. be able to.

When the predetermined processing is completed in the RTP apparatus 70, that is, the first processing unit 61 as described above, the film-formed wafer W is picked up by the negative pressure transfer device 12 from the lifter pins 82 of the first processing unit 61, and is negatively charged. The wafer is unloaded from the wafer loading / unloading port 65 of the first processing unit 61 into the negative pressure transfer chamber 10 maintained at a pressure.
When the processed wafer W is unloaded from the first processing unit 61 to the negative pressure transfer chamber 10 by the negative pressure transfer device 12, the wafer loading / unloading port 67 of the first cooling unit 63 is opened by the gate valve 67A.
Subsequently, the negative pressure transfer device 12 carries the wafer W unloaded from the first processing unit 61 into the processing chamber (cooling chamber) of the first cooling unit 63 through the wafer loading / unloading port 67, and the substrate mounting table in the processing chamber. To be transferred to.
When the transfer operation of the wafer W from the first processing unit 61 to the first cooling unit 63 is completed, the wafer loading / unloading port 67 in the processing chamber of the first cooling unit 63 is closed by the gate valve 67A. When the wafer carry-in / out port 67 is closed, the film-formed wafer carried into the first cooling unit 63 is cooled.

When a preset cooling time elapses in the first cooling unit 63, the cooled wafer W is picked up from the first cooling unit 63 by the negative pressure transfer device 12 in the same manner as in the first processing unit 61 described above. Then, it is carried out to the negative pressure transfer chamber 10 maintained at a negative pressure.
When the cooled wafer W is unloaded from the first cooling unit 63 to the negative pressure transfer chamber 10, the unloading port 33 is opened by the gate valve 34.
Subsequently, the negative pressure transfer device 12 conveys the wafer W unloaded from the first cooling unit 63 to the unloading port 33 of the negative pressure transfer chamber 10, unloads it to the unloading chamber 30 through the unloading port 33, and for the unloading chamber. Transfer to the temporary table 35.
When the transfer operation of the cooled wafer W from the first cooling unit 63 to the unloading chamber 30 is completed, the unloading ports 32 and 33 of the unloading chamber 30 are closed by the gate valve 34.

When the carry-out ports 32 and 33 of the carry-out chamber 30 are closed by the gate valve 34, the carry-out ports 36 and 37 on the positive pressure transfer chamber 40 side of the carry-out chamber 30 are opened by the gate valve 38 and the load lock of the carry-out chamber 30. Is released.
When the load lock of the unloading chamber 30 is released, the wafer loading / unloading port 48 corresponding to the unloading chamber 30 of the positive pressure transfer chamber 40 is opened by the pod opener 50 and the empty pod mounted on the mounting table 51 is opened. The P cap is opened by the pod opener 50.
Subsequently, the positive pressure transfer device 42 in the positive pressure transfer chamber 40 picks up the wafer W from the carry-out chamber temporary placement table 35 through the carry-out port 37 and carries it out to the positive pressure transfer chamber 40. It is stored (charged) in the pod P through the 40 wafer loading / unloading ports 48.
When the storage of the 25 processed wafers W into the pod P is completed, the cap of the pod P is attached to the wafer loading / unloading port by the cap attaching / detaching mechanism 52 of the pod opener 50, and the pod P is closed. The closed pod P is transported from the mounting table 51 to the next process by the in-process transport device.

By repeating the above operation, the wafers are sequentially processed one by one.
The above operation has been described by taking the case where the first processing unit 61 and the first cooling unit 63 are used as an example, but the same operation is also performed when the second processing unit 62 and the second cooling unit 64 are used. To be implemented.

  According to the embodiment, the following effects can be obtained.

1) By projecting a light-shielding part 99 inclined upward at the opening 98a of the inner platform 98, the light 110 from the first heating lamp group 85 and the second heating lamp group 86 is shielded by the light-shielding part 99, Since it is possible to prevent leakage upward, the radiation thermometer probe 104 and the reference probe 106 pick up only the radiated light 111 from the wafer W, thereby preventing the measurement accuracy of the radiation thermometer from being lowered. can do.

2) Without supporting the wafer W by the light shielding portion 99, the wafer W is lifted and supported in the opening 98a of the inner platform 98 by the four support pins 100, whereby the wafer W is supported in the opening 98a. Since the whole can be heated by the light 110 from the heating lamp group 85 and the second heating lamp group 86, a temperature drop at the peripheral edge of the wafer W can be prevented.

3) The light shielding portion 99 is disposed on the upper side of the wafer W, and the wafer W is supported by the four support pins 100 on the bottom of the opening 98a of the inner platform 98, so that the wafer W can be warped. Since W falls below the light-shielding portion 99, light 110 from the first heating lamp group 85 and the second heating lamp group 86 can be prevented from leaking above the wafer W.

4) Since the light-reflecting part 99 is formed so that the light reflected by the light-shielding part 99 irradiates the peripheral part of the wafer W, the peripheral part of the wafer W can be heated by the light reflected by the light-shielding part 99. A temperature drop at the peripheral edge of the wafer W can be prevented.

FIG. 5 shows a first comparative example of the present invention.
As shown in FIG. 5, in the opening portion of the inner platform 98 </ b> A as a light shielding member, a light shielding portion 99 </ b> A having a diameter smaller than the outer diameter of the wafer W is engaged with the peripheral portion of the wafer W from below. Therefore, the light 110 from the first heating lamp group 85 and the second heating lamp group 86 can be prevented from leaking to the probe 104 side of the radiation thermometer.
However, since the light shielding portion 99A completely shields the peripheral edge of the wafer W, there is a problem that the temperature of the peripheral edge of the wafer W decreases.

FIG. 6 shows a second comparative example of the present invention.
As shown in FIG. 6, since the light shielding part 99B is separated from the periphery of the wafer W, there is a problem that the light 112 irradiated from an oblique angle enters the probe 104 of the radiation thermometer.
Further, since the light shielding part 99B is positioned below the wafer W, a part of the light from the first heating lamp group 85 and the second heating lamp group 86 is blocked, that is, the light shielding part 99B has a light shielding part. Since the peripheral portion is in a state of being projected as a shadow on the peripheral portion of the lower surface of the wafer W, the temperature of the peripheral portion of the wafer W is lowered accordingly.

  In addition, this invention is not limited to the said embodiment, It cannot be overemphasized that it can change variously in the range which does not deviate from the summary.

  The support pins are not limited to four, and may be set to three or five or more.

  The heating source is not limited to a heating lamp, and a resistance wire heater or the like may be used.

  The substrate is not limited to the wafer, and may be a substrate such as a glass substrate or an array substrate in the manufacturing process of the LCD device (liquid crystal display device).

  Although the case where the single-wafer type reduced pressure RTP apparatus is configured has been described in the above embodiment, the present invention can be applied to general substrate processing apparatuses such as a normal pressure RTP apparatus, a plasma RTP apparatus, and a dry etching apparatus.

1 is a partially cut plan view showing a multi-chamber processing apparatus according to an embodiment of the present invention. It is side surface sectional drawing which shows a RTP apparatus. The main part of the RTP apparatus is shown, (a) is a plan view, and (b) is a side sectional view. It is front sectional drawing of the principal part which shows the light-shielding effect | action. It is front sectional drawing of the principal part which shows the 1st comparative example of this invention. It is front sectional drawing of the principal part which shows the 2nd comparative example of this invention.

Explanation of symbols

  W ... wafer (substrate), P ... pod (substrate carrier), 10 ... negative pressure transfer chamber (substrate transfer chamber), 11 ... negative pressure transfer chamber housing, 12 ... negative pressure transfer device (wafer transfer) (Equipment), 13 ... elevator, 20 ... carry-in chamber (carry-in spare room), 21 ... carry-in chamber housing, 22, 23 ... carry-in port, 24 ... gate valve, 25 ... temporary storage table for carry-in chamber, 26, 27 ... Loading port, 28 ... gate valve, 30 ... unloading chamber (preliminary chamber for unloading), 31 ... unloading chamber housing, 32, 33 ... unloading port, 34 ... gate valve, 35 ... temporary storage table for unloading chamber, 36, 37 ... unloading port, 38 ... gate valve, 40 ... positive pressure transfer chamber (wafer transfer chamber), 41 ... positive pressure transfer chamber housing, 42 ... positive pressure transfer device (wafer transfer device), 43 ... elevator , 44 ... Linear actuator, 45 ... Notch alignment device, 47, 48, 49 ... Wafer loading / unloading port, 50 Pod opener, 51 ... mounting table, 52 ... cap attaching / detaching mechanism, 61 ... first processing unit (first processing unit), 62 ... second processing unit (second processing unit), 63 ... first cooling unit (third processing) Part), 64 ... second cooling unit (fourth processing part), 70 ... RTP apparatus (substrate processing apparatus), 71 ... processing chamber, 72 ... housing, 73 ... cup, 74 ... top plate, 75 ... bottom plate, 76 ... Exhaust port, 77 ... Wafer loading / unloading port, 78 ... Gate valve, 79 ... Elevating drive device, 80 ... Elevating shaft, 81 ... Elevating plate, 82 ... Lifter pin, 83 ... Support cylinder, 84 ... Cooling plate, 85 ... No. One heating lamp group, 86 ... second heating lamp group, 87 ... first column, 88 ... second column, 89 ... power supply wire, 91 ... turret, 92 ... bearing, 93 ... internal spur gear, 94 ... primary side Spur gear DESCRIPTION OF SYMBOLS 95 ... Bearing, 96 ... Holding member rotation apparatus, 97 ... Outer platform, 98 ... Inner platform (light-shielding member), 98a ... Opening part, 99 ... Light-shielding part, 100 ... Support pin, 101 ... Holding member, 102 ... Source gas supply Pipe 103, Inert gas supply pipe, 104 ... Probe of radiation thermometer (temperature measuring device), 105 ... Emissivity measuring device, 106 ... Reference probe, 107 ... Motor for reference probe, 108 ... Reference lamp, 110 ... Heating Light from the lamp, 111... Emitted light from the wafer, 112.

Claims (1)

A processing chamber providing a space for processing a substrate;
A heating means provided on one side of the processing position of the substrate placed in the processing chamber during processing of the substrate;
Temperature measuring means provided on the other side of the processing position for measuring the temperature of the substrate;
Holding means for holding the substrate at the processing position;
A light shielding member having a substantially circular opening provided on the outer peripheral side of the substrate in a non-contact state with the substrate held at the processing position;
A substrate processing apparatus comprising:
The substrate processing apparatus, wherein an end face of the light shielding member on the opening side is inclined toward the temperature measuring means.

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