JP2009152635A - Single-wafer processing apparatus - Google Patents

Single-wafer processing apparatus Download PDF

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JP2009152635A
JP2009152635A JP2009078287A JP2009078287A JP2009152635A JP 2009152635 A JP2009152635 A JP 2009152635A JP 2009078287 A JP2009078287 A JP 2009078287A JP 2009078287 A JP2009078287 A JP 2009078287A JP 2009152635 A JP2009152635 A JP 2009152635A
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mounting table
wafer
processing apparatus
processing
temperature measurement
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JP4661968B2 (en
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Tatsuya Handa
達也 半田
Masayuki Tanaka
雅之 田中
Susumu Kato
進 河東
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a single-wafer processing apparatus which is capable of enhancing the uniformity of processing within a wafer surface by keeping the uniformity of the temperature distribution high within a surface of a loading table. <P>SOLUTION: The single-wafer processing apparatus carries out prescribed processing by making lift pins 70 ascend and descend to load an object W onto a thin-plate loading table 58 inside a processing chamber 36 and heating the loading table with a heater lamp 108 underneath the loading table to indirectly heat the object wafer W, wherein the lift pins are arranged to support peripheral edges of the object wafer and pin insertion parts 60 for passing the ascending and descending lift pins are formed in the loading table at positions corresponding to the edges. In this way, adverse effects on distribution characteristics of the heated temperature of the loading table due to light of the heater lamp irradiating through the pin insertion parts are greatly suppressed. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、半導体ウエハ等の被処理体に所定の処理を施す枚葉式の処理装置に関する。   The present invention relates to a single wafer processing apparatus that performs a predetermined process on a target object such as a semiconductor wafer.

一般に、半導体集積回路を製造するには、半導体ウエハ等の被処理体に、成膜処理、エッチング処理、熱処理、改質処理、結晶化処理等の各種の処理を繰り返し行なって、所望する集積回路を形成するようになっている。上記したような各種の処理を行なう場合には、その処理の種類に対応して必要な処理ガス、例えば成膜処理の場合には成膜ガスを、改質処理の場合にはオゾンガス等を、結晶化処理の場合にはＮ２ ガス等の不活性ガスやＯ２ ガス等をそれぞれ処理容器内へ導入する。
例えば半導体ウエハに対して１枚毎に熱処理を施す枚葉式の処理装置を例にとれば（特許文献１参照）、真空引き可能になされた処理容器内に、薄い載置台を設置し、この上面に半導体ウエハを載置した状態で下方より加熱ランプで加熱しつつ所定の処理ガスを流し、ウエハに各種の熱処理を施すようになっている。 In general, in order to manufacture a semiconductor integrated circuit, a desired integrated circuit is obtained by repeatedly performing various processes such as a film forming process, an etching process, a heat treatment, a modification process, and a crystallization process on an object to be processed such as a semiconductor wafer. Is supposed to form. When performing various processes as described above, a necessary processing gas corresponding to the type of the process, for example, a film forming gas in the case of a film forming process, an ozone gas or the like in the case of a reforming process, In the case of crystallization treatment, an inert gas such as N 2 gas or O 2 gas is introduced into the processing vessel.
For example, if a single wafer processing apparatus that performs heat treatment on each semiconductor wafer is taken as an example (see Patent Document 1), a thin mounting table is installed in a processing container that can be evacuated. While the semiconductor wafer is mounted on the upper surface, a predetermined processing gas is flowed while being heated by a heating lamp from below to perform various heat treatments on the wafer.

ところで、この載置台には、周知のように処理容器内へ搬入されてきたウエハを載置台上に移載するために上下方向へ出没可能になされた押し上げピンが設けられており、これを昇降させることにより、ウエハを載置台上に載置したり、或いは逆に、載置台上のウエハを上方へ突き上げたりできるようになっている。そして、載置台上のウエハは、その周縁部をリング状のクランプ部材で載置台側に押し付けて固定され、処理中にこのウエハが位置ずれしないようにしている。   By the way, this mounting table is provided with a push-up pin that can be moved up and down in order to transfer the wafer carried into the processing container onto the mounting table, as is well known. By doing so, the wafer can be mounted on the mounting table, or conversely, the wafer on the mounting table can be pushed upward. The wafer on the mounting table is fixed by pressing the peripheral edge of the wafer on the mounting table side with a ring-shaped clamp member so that the wafer is not displaced during processing.

この点について、図２１及び図２２を参照して詳しく説明する。
図２１は一般的な枚葉式の処理装置を示す構成図、図２２は載置台の部分を中心として示す平面図である。図２１に示すように、例えば真空引き可能になされた処理容器２内には、半導体ウエハＷを載置する載置台４が設けられると共に、この対向側にはシャワーヘッド部６が設けられて所定の処理ガスを供給する。また、載置台４の下方であって、処理容器２の底部側には透過窓１０を介して加熱手段として加熱ランプ８が設けられて、上記ウエハＷを加熱するようになっている。 This point will be described in detail with reference to FIGS. 21 and 22.
FIG. 21 is a block diagram showing a general single-wafer processing apparatus, and FIG. 22 is a plan view showing the mounting table as a center. As shown in FIG. 21, for example, in a processing vessel 2 that can be evacuated, a mounting table 4 for mounting a semiconductor wafer W is provided, and a shower head unit 6 is provided on the opposite side to provide a predetermined amount. The process gas is supplied. Further, a heating lamp 8 is provided as a heating means below the mounting table 4 and on the bottom side of the processing vessel 2 through a transmission window 10 so as to heat the wafer W.

また、上記載置台４の直下には、アクチュエータ（図示せず）により一体的に昇降可能になされた複数、例えば３本のリフトピン１２（図示例では２本のみ記す）が設けられ、このリフトピン１２の先端が載置台４に設けたピン孔１４に挿通されてウエハＷを持ち上げたり、持ち下げたりできるようになっている。
そして、このリフトピン１２と一体的に、載置台４の外側に位置させてロッド部材１６が設けられる。このロッド部材１６は、石英製の弾発部材収容筒１８内に収容されたバネの如き弾発部材により上下方向へ出没可能になされている。そして、このロッド部材１６の上端部に例えば金属汚染の少ない、しかも熱伸縮も少ない窒化アルミ（ＡｌＮ）等のセラミックよりなる円形リング状のクランプ部材２０が取り付けられており、このクランプ部材２０の内側周縁部が上記ウエハＷの周縁部の上面と当接してこのウエハＷを載置台４側に押圧固定するようになっている。 A plurality of, for example, three lift pins 12 (only two are shown in the illustrated example) that can be moved up and down integrally by an actuator (not shown) are provided immediately below the mounting table 4. Is inserted into a pin hole 14 provided on the mounting table 4 so that the wafer W can be lifted or lowered.
Then, the rod member 16 is provided integrally with the lift pin 12 and positioned outside the mounting table 4. The rod member 16 can be moved up and down by a resilient member such as a spring housed in a quartz resilient member housing cylinder 18. A circular ring-shaped clamp member 20 made of ceramic such as aluminum nitride (AlN) with little metal contamination and less thermal expansion and contraction is attached to the upper end portion of the rod member 16. The peripheral edge comes into contact with the upper surface of the peripheral edge of the wafer W, and the wafer W is pressed and fixed to the mounting table 4 side.

そして、上記載置台４の下方の側部には、その内壁面が反射面になされた円筒体状の反射部材２２が処理容器２の底部より起立させて設けられており、側方に発散する加熱ランプ８からの照射光を載置台４の裏面側に向けて反射するようになっている。そして、この反射部材２２の上端部には、上記ロッド部材１６やリフタピン１２等の昇降移動を許容するための切り込み部２４が部分的に形成されている。
また、上記反射部材２２の外側には、円筒体状の支柱２６が起立させて設けられており、この支柱２６の上端部には、補助リング２８を介して同じく円形リング状に成形されたアタッチメント部材３０（図２２参照）が設けられている。そして、このアタッチメント部材３０の内周面に、中心方向へ突出した複数の、図示例では４つの支持突起３０Ａが設けられており、この支持突起３０Ａに、前記載置台４の周縁部の裏面を当接させて、これを支持するようになっている。また、このアタッチメント部材３０には、上記ロッド部材１６や弾発部材収容筒１８を挿通するための挿通孔３２が形成されている。また、載置台４の外周端部には、載置台４の内部に向けて温度測定穴（図示せず）が設けられており、この温度測定穴に熱電対や光ファイバのロッドを挿入して載置台４の中心部や周辺部の温度を検出して温度制御を行うようになっている。 A cylindrical reflection member 22 whose inner wall surface is a reflection surface is provided on the side portion below the mounting table 4 so as to stand up from the bottom of the processing container 2 and diverges sideways. The irradiation light from the heating lamp 8 is reflected toward the back side of the mounting table 4. A cut portion 24 for allowing the rod member 16 and the lifter pin 12 to move up and down is partially formed at the upper end portion of the reflecting member 22.
In addition, a cylindrical column 26 is erected on the outer side of the reflection member 22, and an attachment that is also formed in a circular ring shape through an auxiliary ring 28 at the upper end of the column 26. A member 30 (see FIG. 22) is provided. A plurality of, in the illustrated example, four support protrusions 30A protruding in the center direction are provided on the inner peripheral surface of the attachment member 30, and the back surface of the peripheral portion of the mounting table 4 is provided on the support protrusion 30A. It abuts and supports it. Further, the attachment member 30 is formed with an insertion hole 32 for inserting the rod member 16 and the elastic member housing cylinder 18. Further, a temperature measurement hole (not shown) is provided at the outer peripheral end of the mounting table 4 toward the inside of the mounting table 4, and a thermocouple or an optical fiber rod is inserted into the temperature measuring hole. Temperature control is performed by detecting the temperature of the central part and the peripheral part of the mounting table 4.

特開２００２−１３４５９６号公報（第３−４頁、図１）JP 2002-134596 A (page 3-4, FIG. 1)

ところで、半導体集積回路の微細化、薄膜化及び集積化が更に進むに従って、処理の面内均一性を更に向上させることが要求されるに至っており、例えば成膜処理を例にとれば、膜厚の面内均一性を一層向上させることが求められている。
しかしながら、従来の装置例にあっては、載置台４の周縁部より相当内側に、リフトピン１２を挿通するためのピン孔１４が形成されているために、この部分における温度分布に悪影響を与える、といった問題があった。すなわち、載置台４は、例えば窒化アルミニウムよりなり、その裏面は略黒色になされていることから、加熱ランプ８からの照射光を効率的に吸収できるのに対して、直径が１０ｍｍ程度の上記ピン孔１４の部分では、これに照射光８が直接的に侵入して赤外線の透過率が大きなウエハＷを透過してしまうので、加熱温度分布特性に悪影響を与える傾向にあった。 By the way, as the miniaturization, thinning and integration of semiconductor integrated circuits further progress, it has been required to further improve the in-plane uniformity of processing. There is a need to further improve the in-plane uniformity.
However, in the conventional apparatus example, since the pin hole 14 for inserting the lift pin 12 is formed substantially inside the peripheral portion of the mounting table 4, the temperature distribution in this portion is adversely affected. There was a problem. That is, the mounting table 4 is made of, for example, aluminum nitride, and the back surface thereof is substantially black, so that the irradiation light from the heating lamp 8 can be efficiently absorbed, whereas the pin having a diameter of about 10 mm. In the portion of the hole 14, the irradiation light 8 directly penetrates into the hole 14 and passes through the wafer W having a large infrared transmittance, so that the heating temperature distribution characteristic tends to be adversely affected.

また、クランプ部材２０を支持する弾発部材収容筒１８は、一般的には全体で３個設けられているが、この弾発部材収容筒１８が加熱ランプ８からの照射光を直接的に受けるような構造となっているために、アタッチメント部材３０の裏面側等において上記弾発部材収容筒１８の影となって照射光が直接的に当たらない部分が発生するなどして、載置台４の加熱温度分布特性に悪影響を与える傾向にあった。
更には、図２２に示すように、載置台４は、例えば石英製のアタッチメント部材３０に形成した支持突起３０Ａと部分的に接し、且つこの支持突起３０Ａの部分のみで上下方向にオーバラップしているので、温度分布のバランスを崩す原因となり、この点よりも載置台４の加熱温度分布特性に悪影響を与える傾向にあった。 In general, three elastic member housing cylinders 18 for supporting the clamp member 20 are provided, but the elastic member housing cylinders 18 directly receive the irradiation light from the heating lamp 8. Because of such a structure, a part of the mounting member 4 that is not directly exposed to the irradiation light such as the shadow of the elastic member housing cylinder 18 occurs on the back surface side of the attachment member 30 or the like. There was a tendency to adversely affect the heating temperature distribution characteristics.
Furthermore, as shown in FIG. 22, the mounting table 4 is partially in contact with the support protrusion 30A formed on the attachment member 30 made of, for example, quartz, and overlaps in the vertical direction only with the support protrusion 30A. Therefore, the balance of temperature distribution is lost, and the heating temperature distribution characteristics of the mounting table 4 tend to be adversely affected rather than this point.

また載置台４の温度測定穴には、熱電対や光ファイバのロッドを挿入して載置台４の温度を検出しているが、この温度測定穴に処理ガス、例えば成膜ガスが侵入してくると、成膜ガスの種類によっては、次のような問題があった。すなわち、温度測定のために熱電対を用いている場合には、腐食性の成膜ガスが熱電対や載置台の内部を構成する材料と反応してしまい、この熱電対を温度測定穴から抜いて取り出すことができなくなったり、温度測定が不安定になってしまう。
また温度測定のために光ファイバのロッドを用いている場合には、ロッドの先端または外周部分に所定の屈折率を有する堆積物が付着してしまい、これがために、測定帯域の波長の光成分の入射量が減少したり、一部が外へ漏れ出してしまったり、或いは逆に外部より光ファイバ内へ外乱の光が侵入してしまったりし、正確な温度測定ができなくなる、といった問題があった。 Further, a thermocouple or an optical fiber rod is inserted into the temperature measurement hole of the mounting table 4 to detect the temperature of the mounting table 4, and a processing gas, for example, a film forming gas enters the temperature measuring hole. Then, there were the following problems depending on the type of film forming gas. That is, when a thermocouple is used for temperature measurement, the corrosive film-forming gas reacts with the thermocouple and the material constituting the mounting table, and the thermocouple is removed from the temperature measurement hole. It becomes impossible to take out and temperature measurement becomes unstable.
In addition, when an optical fiber rod is used for temperature measurement, a deposit having a predetermined refractive index adheres to the tip or outer peripheral portion of the rod, and this causes an optical component having a wavelength in the measurement band. The amount of incident light decreases, some leaks out, or disturbance light enters the optical fiber from the outside and accurate temperature measurement cannot be performed. there were.

本発明は、以上のような問題点に着目し、これを有効に解決すべく創案されたものである。本発明の目的は、載置台における温度分布の面内均一性を高く保持して処理の面内均一性を向上させることが可能な枚葉式の処理装置を提供することにある。
本発明の他の目的は、熱電対や光ファイバのロッドを挿入する温度測定穴内へ処理ガスが侵入することを確実に防止して正確な載置台温度を検出することが可能な枚葉式の処理装置を提供することにある。 The present invention has been devised to pay attention to the above problems and to effectively solve them. An object of the present invention is to provide a single-wafer processing apparatus capable of improving the in-plane uniformity of processing by maintaining high in-plane uniformity of the temperature distribution in the mounting table.
Another object of the present invention is to provide a single-wafer type that can accurately prevent the processing gas from entering the temperature measurement hole into which the thermocouple or the optical fiber rod is inserted and detect the accurate mounting table temperature. It is to provide a processing apparatus.

請求項１に係る発明は、処理容器内に設けられた薄板状の載置台にリフトピンを昇降させることによって被処理体を載置し、前記載置台をその下方に配置した加熱ランプにより加熱することにより前記被処理体を間接的に加熱して所定の処理を施すようにした枚葉式の処理装置において、前記被処理体の周辺のエッジ部を支持できるように前記リフトピンを配置すると共に、前記載置台には前記エッジ部に対応する部分に前記昇降するリフトピンを通すためのピン挿通部が形成されていることを特徴とする枚葉式の処理装置である。
このように、被処理体の周辺の端部であるエッジ部を支持できるようにリフトピンを配置し、且つ載置台には上記エッジ部に対応する部分にリフトピンを通す挿通部を形成するようにしたので、このピン挿通部を通過する加熱ランプからの照射光が載置台の加熱温度の分布特性に与える悪影響を大幅に抑制することが可能となり、この結果、被処理体の面内処理の均一性を向上させることが可能となる。 According to the first aspect of the present invention, the object to be processed is placed on a thin plate-like mounting table provided in the processing container by moving the lift pin up and down, and the mounting table is heated by a heating lamp disposed below the mounting table. In the single wafer processing apparatus in which the object to be processed is subjected to a predetermined process by indirectly heating the object to be processed, the lift pins are disposed so as to support the peripheral edge portion of the object to be processed, and the front In the mounting table, a pin insertion portion for passing the lift pin that moves up and down is formed in a portion corresponding to the edge portion.
As described above, the lift pins are arranged so as to support the edge portion that is the peripheral edge portion of the object to be processed, and the mounting table is formed with an insertion portion through which the lift pin passes through the portion corresponding to the edge portion. Therefore, it becomes possible to greatly suppress the adverse effect of the irradiation light from the heating lamp passing through the pin insertion portion on the distribution characteristics of the heating temperature of the mounting table, and as a result, the uniformity of the in-plane processing of the object to be processed Can be improved.

この場合、例えば請求項２に規定するように、前記エッジ部は、前記被処理体の外周端面より５ｍｍ以内の範囲である。
また、例えば請求項３に規定するように、前記ピン挿通部は、前記載置台の周縁部に形成した切り欠きにより構成される。
また、例えば請求項４に規定するように、前記ピン挿通部は、前記載置台の周縁部に形成した貫通孔により構成される。 In this case, for example, as defined in claim 2, the edge portion is within a range of 5 mm from the outer peripheral end surface of the object to be processed.
For example, as defined in claim 3, the pin insertion portion is formed by a notch formed in the peripheral portion of the mounting table.
For example, as defined in claim 4, the pin insertion portion is configured by a through hole formed in a peripheral portion of the mounting table.

請求項５に係る発明は、処理容器内にリング状のアタッチメント部材を設け、該アタッチメント部材の内側周縁部により薄板円板状の載置台を支持させ、前記載置台上に被処理体を載置して前記載置台の下方に配置した加熱ランプにより前記被処理体を間接的に加熱して所定の処理を施すようにした枚葉式の処理装置において、前記アタッチメント部材は、その内側周縁部と前記載置台の周縁部とが所定の幅でその周方向に沿って上下方向に重なるような状態で前記載置台を支持するように構成したことを特徴とする枚葉式の処理装置である。
このように、リング状のアタッチメント部材は、その内側周縁部と載置台の周縁部とがその周方向に沿って上下方向に全体的に重なるような状態で載置台を支持するように構成したので、載置台の周縁部において照射光が直接当たる部分と当たらない部分（支持突起の部分に対応）とが発生するような従来の処理装置と異なり、載置台の加熱温度の分布特性に与える悪影響を大幅に抑制することが可能となる。この結果、被処理体の面内処理の均一性を向上させることが可能となる。 According to a fifth aspect of the present invention, a ring-shaped attachment member is provided in the processing container, a thin disk-shaped mounting table is supported by the inner peripheral edge of the attachment member, and the object to be processed is mounted on the mounting table. Then, in the single wafer processing apparatus in which the object to be processed is subjected to a predetermined process by indirectly heating the object to be processed by a heating lamp disposed below the mounting table, the attachment member includes an inner peripheral edge part thereof and A single-wafer processing apparatus configured to support the mounting table in a state in which a peripheral portion of the mounting table overlaps in a vertical direction along a circumferential direction with a predetermined width.
As described above, the ring-shaped attachment member is configured to support the mounting table in a state in which the inner peripheral edge portion thereof and the peripheral edge portion of the mounting table entirely overlap in the vertical direction along the circumferential direction. Unlike the conventional processing equipment in which a portion that is directly exposed to light and a portion that does not impinge (corresponding to the support protrusion) are generated at the periphery of the mounting table, the adverse effect on the distribution characteristics of the heating temperature of the mounting table It becomes possible to suppress significantly. As a result, it is possible to improve the uniformity of the in-plane processing of the object to be processed.

この場合、例えば請求項６に規定するように、前記アタッチメント部材の内側周縁部の上面と前記載置台の周縁部の下面との間には複数のスペーサ部材がその周方向に沿って適宜配置されている。
請求項７に係る発明は、処理容器内に設けられた薄板状の載置台にリフトピンを昇降させることによって被処理体を載置し、前記被処理体の上面の周縁部に当接して弾発機構部により発生する弾性力により前記被処理体を前記載置台側に押圧して保持させるクランプ部材を設け、前記載置台をその下方に配置した加熱ランプにより加熱することにより前記被処理体を間接的に加熱して所定の処理を施すようにした枚葉式の処理装置において、前記載置台の外側の下方に、前記加熱ランプからの照射光を前記載置台に向けて反射するために円筒体状に成形された所定の厚みの反射部材を設け、前記反射部材の上部に、前記クランプ部材に弾発力を付与する前記弾発機構部を収容するための部材収容空間を形成するように構成したことを特徴とする枚葉式の処理装置である。 In this case, for example, as defined in claim 6, a plurality of spacer members are appropriately arranged along the circumferential direction between the upper surface of the inner peripheral edge of the attachment member and the lower surface of the peripheral edge of the mounting table. ing.
According to a seventh aspect of the present invention, the object to be processed is placed on a thin plate-like mounting table provided in the processing container by moving the lift pin up and down, and is brought into contact with the peripheral edge of the upper surface of the object to be processed. A clamp member that presses and holds the object to be processed toward the mounting table by the elastic force generated by the mechanism portion is provided, and the processing object is indirectly heated by heating the mounting table by a heating lamp disposed below the mounting table. In a single-wafer processing apparatus, which is heated to perform a predetermined process, a cylindrical body for reflecting the irradiation light from the heating lamp toward the mounting table below the outside of the mounting table A reflection member having a predetermined thickness is formed, and a member accommodation space is formed in the upper portion of the reflection member to accommodate the elastic mechanism portion that applies an elastic force to the clamp member. Characterized by Single is a leaf type of processing apparatus.

このように、加熱ランプからの照射光を載置台の裏面に向けて反射する円筒体状に成形された反射部材の上部に、例えば切り込み状の部材収容空間を設け、この部材収容空間内に、クランプ部材へ弾発力を付与する弾発機構部を収容するようにしたので、この弾発機構部に加熱ランプからの照射光が直接的に当たっていた従来の処理装置とは異なり、載置台の加熱温度の分布特性に与える悪影響を大幅に抑制することが可能となる。この結果、被処理体の面内処理の均一性を向上させることが可能となる。   Thus, for example, a notch-shaped member housing space is provided on the upper part of the reflecting member formed in a cylindrical shape that reflects the irradiation light from the heating lamp toward the back surface of the mounting table, and in this member housing space, Unlike the conventional processing device in which the light emitted from the heating lamp is directly applied to the elastic mechanism, the elastic mechanism for applying the elastic force to the clamp member is accommodated. The adverse effect on the temperature distribution characteristic can be greatly suppressed. As a result, it is possible to improve the uniformity of the in-plane processing of the object to be processed.

この場合、例えば請求項８に規定するように、前記弾発機構部は、石英製の弾発部材収容筒と、該弾発部材収容筒内に収容された弾発部材と、上端部が前記クランプ部材に連結されて下端部が前記弾発部材に係合されたシャフト部材とにより構成される。
請求項９に係る発明は、請求項１乃至４のいずれかに記載された処理装置に含まれる特徴的構成と、請求項５または６に記載された処理装置に含まれる特徴的構成と、請求項７または８に記載された処理装置に含まれる特徴的構成とを含む３つの特徴的構成の中から、選択された２以上の特徴的構成を含むことを特徴とする枚葉式の処理装置である。 In this case, for example, as defined in claim 8, the impact mechanism includes a quartz impact member accommodating cylinder, an impact member accommodated in the impact member accommodating cylinder, and an upper end portion of the impact member. A shaft member connected to the clamp member and having a lower end engaged with the elastic member.
The invention according to claim 9 is a characteristic configuration included in the processing apparatus according to any one of claims 1 to 4, a characteristic configuration included in the processing apparatus according to claim 5 or 6, and a claim A single wafer processing apparatus including two or more characteristic configurations selected from the three characteristic configurations including the characteristic configuration included in the processing apparatus according to Item 7 or 8 It is.

請求項１０に係る発明は、処理容器内の処理空間へ処理ガスを供給するガス供給手段を設け、前記処理容器内にリング状のアタッチメント部材を設け、該アタッチメント部材の内側周縁部により薄板円板状の載置台の外周端部を支持させ、前記載置台の下方にバックサイドガスを供給するバックサイドガス供給手段を設け、前記載置台上に被処理体を載置して前記載置台の下方に配置した加熱ランプにより前記被処理体を間接的に加熱して所定の処理を施すようにした枚葉式の処理装置において、前記載置台の外周端部の側面に、該側面より載置台の内部に向かって温度測定穴を形成し、前記アタッチメント部材側より前記温度測定穴に向けて温度測定用検出子を挿入し、前記温度測定穴を形成した前記載置台の外周端部及び前記温度測定穴を臨む前記アタッチメント部材の内側周縁部の内の少なくともいずれか一方に、前記載置台の下方より上方の前記処理空間に向かうバックサイドガスの通りを促進させるガス流促進切り欠きを設けるように構成したことを特徴とする枚葉式の処理装置である。   The invention according to claim 10 is provided with a gas supply means for supplying a processing gas to a processing space in the processing container, a ring-shaped attachment member is provided in the processing container, and a thin disc is formed by an inner peripheral edge of the attachment member. A backside gas supply means for supplying a backside gas is provided below the mounting table so as to support the outer peripheral end of the cylindrical mounting table, and the object to be processed is mounted on the mounting table and below the mounting table. In the single-wafer processing apparatus in which the object to be processed is subjected to a predetermined process by indirectly heating the object to be processed by the heating lamp disposed on the side surface of the mounting table from the side surface to the side surface of the outer peripheral end of the mounting table. A temperature measurement hole is formed toward the inside, a temperature measurement detector is inserted toward the temperature measurement hole from the attachment member side, and the outer peripheral end of the mounting table and the temperature measurement are formed. hole A gas flow promoting notch for accelerating the passage of the backside gas toward the processing space above the mounting table is provided in at least one of the inner peripheral edges of the attachment member facing the mounting member. Is a single wafer processing apparatus.

このように、温度測定用検出子を挿入する温度測定穴を形成した載置台の外周端部やこの温度測定穴を臨むアタッチメント部材にガス流促進切り欠きを設けて、載置台の下方に供給されているバックサイドガスを上記ガス流促進切り欠きを介して上方の処理空間側へ積極的に流すようにしたので、上記温度測定穴内へ処理ガスが侵入することを確実に防止することができ、この結果、温度測定用検出子の表面に堆積物が付着するのを防止したり、温度測定穴内で腐食が発生することを確実に防止することができる。   As described above, the gas flow promoting notch is provided in the outer peripheral end of the mounting table in which the temperature measuring hole for inserting the temperature measuring detector is formed or the attachment member facing the temperature measuring hole, and the gas is supplied to the lower side of the mounting table. Since the backside gas is actively flowed to the upper processing space side through the gas flow promoting cutout, it is possible to reliably prevent the processing gas from entering the temperature measurement hole, As a result, it is possible to prevent deposits from adhering to the surface of the temperature measurement detector and to reliably prevent corrosion from occurring in the temperature measurement hole.

この場合、例えば請求項１１に規定するように、前記温度測定用検出子には、温度測定ユニットが接続される。
また例えば請求項１２に規定するように、前記温度測定用検出子は２本設けられており、一方の温度測定用検出子の先端部は前記載置台の略中央部に位置されると共に、他方の温度測定用検出子の先端部は前記載置台の略周辺部に位置される。
また例えば請求項１３に規定するように、前記温度測定用検出子は光ファイバのロッドである。
また例えば請求項１４に規定するように、前記温度測定用検出子は熱電対である。 In this case, for example, as defined in claim 11, a temperature measurement unit is connected to the temperature measurement detector.
Further, for example, as defined in claim 12, two temperature measuring detectors are provided, and the tip of one of the temperature measuring detectors is positioned at a substantially central portion of the mounting table, and the other The tip of the temperature measuring detector is positioned substantially at the periphery of the mounting table.
For example, as defined in claim 13, the temperature measuring detector is an optical fiber rod.
For example, as defined in claim 14, the temperature measuring detector is a thermocouple.

本発明の枚葉式の処理装置によれば、次のように優れた作用効果を発揮することができる。
請求項１〜４に係る発明によれば、被処理体の周辺の端部であるエッジ部を支持できるようにリフトピンを配置し、且つ載置台には上記エッジ部に対応する部分にリフトピンを通す挿通部を形成するようにしたので、このピン挿通部を通過する加熱ランプからの照射光が載置台の加熱温度の分布特性に与える悪影響を大幅に抑制することが可能となり、この結果、被処理体の面内処理の均一性を向上させることができる。 According to the single wafer processing apparatus of the present invention, the following excellent operational effects can be exhibited.
According to the invention which concerns on Claims 1-4, a lift pin is arrange | positioned so that the edge part which is the edge part of the periphery of a to-be-processed object can be supported, and let a lift pin pass to the part corresponding to the said edge part to a mounting base. Since the insertion part is formed, it becomes possible to greatly suppress the adverse effect of the irradiation light from the heating lamp passing through the pin insertion part on the distribution characteristics of the heating temperature of the mounting table, and as a result, The uniformity of the in-plane treatment of the body can be improved.

請求項５、６に係る発明によれば、リング状のアタッチメント部材は、その内側周縁部と載置台の周縁部とがその周方向に沿って上下方向に全体的に重なるような状態で載置台を支持するように構成したので、載置台の周縁部において照射光が直接当たる部分と当たらない部分（支持突起の部分に対応）とが発生するような従来の処理装置と異なり、載置台の加熱温度の分布特性に与える悪影響を大幅に抑制することができる。この結果、被処理体の面内処理の均一性を向上させることができる。   According to the invention which concerns on Claim 5, 6, a ring-shaped attachment member is a mounting base in the state which the inner peripheral part and the peripheral part of a mounting base overlap in the up-down direction along the circumferential direction. Unlike conventional processing equipment in which a portion that is directly exposed to the irradiation light and a portion that does not contact (corresponding to the support protrusion) are generated at the periphery of the mounting table, the mounting table is heated. The adverse effect on the temperature distribution characteristics can be greatly suppressed. As a result, the uniformity of the in-plane processing of the target object can be improved.

請求項７、８に係る発明によれば、加熱ランプからの照射光を載置台の裏面に向けて反射する円筒体状に成形された反射部材の上部に、例えば切り込み状の部材収容空間を設け、この部材収容空間内に、クランプ部材へ弾発力を付与する弾発機構部を収容するようにしたので、この弾発機構部に加熱ランプからの照射光が直接的に当たっていた従来の処理装置とは異なり、載置台の加熱温度の分布特性に与える悪影響を大幅に抑制することができる。この結果、被処理体の面内処理の均一性を向上させることができる。
請求項９に係る発明によれば、上記したような作用効果を一層促進させることができる。 According to the seventh and eighth aspects of the present invention, for example, a notch-shaped member housing space is provided on the upper part of the reflecting member formed in a cylindrical shape that reflects the irradiation light from the heating lamp toward the back surface of the mounting table. In this member housing space, the elastic mechanism for applying the elastic force to the clamp member is accommodated, so the irradiation light from the heating lamp is directly applied to the elastic mechanism. Unlike the above, the adverse effect on the distribution characteristics of the heating temperature of the mounting table can be greatly suppressed. As a result, the uniformity of the in-plane processing of the target object can be improved.
According to the invention which concerns on Claim 9, the above effect can be promoted further.

請求項１０〜１４に係る発明によれば、温度測定用検出子を挿入する温度測定穴を形成した載置台の外周端部やこの温度測定穴を臨むアタッチメント部材にガス流促進切り欠きを設けて、載置台の下方に供給されているバックサイドガスを上記ガス流促進切り欠きを介して上方の処理空間側へ積極的に流すようにしたので、上記温度測定穴内へ処理ガスが侵入することを確実に防止することができ、この結果、温度測定用検出子の表面に堆積物が付着するのを防止したり、温度測定穴内で腐食が発生することを確実に防止することができる。   According to the invention which concerns on Claims 10-14, the gas flow acceleration | stimulation notch is provided in the outer peripheral edge part of the mounting base which formed the temperature measurement hole which inserts the detector for temperature measurement, and the attachment member which faces this temperature measurement hole. Since the backside gas supplied to the lower side of the mounting table is actively flowed to the upper processing space side through the gas flow promoting cutout, the processing gas enters the temperature measurement hole. As a result, it is possible to prevent deposits from adhering to the surface of the temperature measurement detector and to prevent corrosion from occurring in the temperature measurement hole.

以下に、本発明に係る枚葉式の処理装置の一実施例を添付図面に基づいて詳述する。
図１は本発明に係る枚葉式の処理装置の一実施例を示す断面図、図２は載置台とアタッチメント部材との取り付け状態を示す平面図、図３は載置台を示す平面図、図４はアタッチメント部材を主体とする平面図、図５は載置台の支持状態を示す部分拡大断面図、図６はリフトピンと弾発機構部を示す斜視図、図７はリフトピンとクランプ部材の動作を説明するための動作説明図、図８は反射部材を示す斜視図、図９は反射部材と弾発機構部との位置関係を説明するための平面図である。 Hereinafter, an embodiment of a single wafer processing apparatus according to the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a sectional view showing an embodiment of a single wafer processing apparatus according to the present invention, FIG. 2 is a plan view showing a mounting state of a mounting table and an attachment member, and FIG. 3 is a plan view showing the mounting table. 4 is a plan view mainly including an attachment member, FIG. 5 is a partially enlarged sectional view showing a support state of the mounting table, FIG. 6 is a perspective view showing a lift pin and a resilient mechanism, and FIG. 7 shows the operation of the lift pin and the clamp member. FIG. 8 is a perspective view showing the reflecting member, and FIG. 9 is a plan view for explaining the positional relationship between the reflecting member and the resilient mechanism portion.

まず、本実施例では、処理装置３４として加熱ランプを用いた高速昇温が可能な枚葉式の成膜装置を例にとって説明する。この処理装置３４は、例えばアルミニウム等により円筒状或いは箱状に成形された処理容器３６を有している。この処理容器３６の天井部には、成膜用ガスやクリーニングガス等の処理ガスをこの処理容器３６内へ導入するためのガス供給手段としてシャワーヘッド部３８がＯリング等のシール部材３９を介して設けられている。具体的には、このシャワーヘッド部３８は、例えばアルミニウム等により円形箱状に成形されたヘッド本体４０を有し、このヘッド本体４０の下面であるガス噴出面には、ヘッド本体４０内へ供給されたガスを放出するための多数のガス噴出孔４２が面内に均等に配置されており、この下方の処理空間Ｓにガスを供給してウエハ表面に亘って均等にガスを放出するようになっている。シャワーヘッド部３８は上記構成に限定されず、使用する処理ガスの種類に応じて種々の構造のものが採用される。処理容器３６内の天井部において上記シャワーヘッド部３８の側方にはガス流を安定化させるために例えば石英よりなるリング状のガス流安定化部材４４が配置されている。   First, in this embodiment, a description will be given by taking as an example a single-wafer type film forming apparatus capable of high-speed temperature rise using a heating lamp as the processing apparatus 34. The processing apparatus 34 includes a processing container 36 that is formed into a cylindrical shape or a box shape from, for example, aluminum. On the ceiling of the processing container 36, a shower head unit 38 is interposed via a seal member 39 such as an O-ring as a gas supply means for introducing a processing gas such as a film forming gas and a cleaning gas into the processing container 36. Is provided. Specifically, the shower head portion 38 has a head main body 40 formed in a circular box shape, for example, with aluminum or the like, and a gas ejection surface which is a lower surface of the head main body 40 is supplied into the head main body 40. A number of gas ejection holes 42 for discharging the generated gas are evenly arranged in the plane, and the gas is supplied to the processing space S below to discharge the gas uniformly over the wafer surface. It has become. The shower head unit 38 is not limited to the above-described configuration, and various types of structures are employed according to the type of processing gas used. In order to stabilize the gas flow, a ring-shaped gas flow stabilization member 44 made of quartz, for example, is disposed on the side of the shower head portion 38 on the ceiling in the processing container 36.

また、この処理容器３６の側壁には、この中へウエハＷを搬入、或いは搬出する際に開閉されるゲートバルブＧが設けられており、例えば真空引き可能になされたロードロック室や搬送室（図示せず）に連結されている。
また、処理容器３６の底部の周辺部には、排気口４６が形成されており、この排気口４６には図示しない真空ポンプ等を介設した排気路４８が接続されて、処理容器３６内を真空引きできるようになっている。 A gate valve G that is opened and closed when the wafer W is loaded into or unloaded from the processing container 36 is provided on the side wall of the processing container 36. For example, a load lock chamber or a transfer chamber (for example, vacuum evacuated) (Not shown).
Further, an exhaust port 46 is formed in the peripheral portion of the bottom of the processing container 36, and an exhaust path 48 having a vacuum pump or the like (not shown) is connected to the exhaust port 46 so that the inside of the processing container 36 is filled. It can be evacuated.

そして、処理容器３６の底部からは、円筒状の支持コラム５０が起立させて設けられており、この支持コラム５０の上端の外周側には、下方向へのガス流を整える整流板５２が設けられている。また、この支持コラム５０の上端の内周側には、例えばアルミニウムよりなる環状の補助リング５４を介してその内側に、例えば石英よりなる同じく環状（リング状）に成形されたアタッチメント部材５６が支持させて設けられている。そして、図２にも示すように、このアタッチメント部材５６の内側周縁部により載置台５８を支持するようになっている。具体的には、この載置台５８は、セラミックス、例えば窒化アルミニウムにより厚さが例えば３．５ｍｍ程度の薄板円板状に成形されており、この上面側にこれと略同一直径サイズの被処理体である半導体ウエハＷを載置し得るようになっている。この載置台５８の裏面は、照射光の吸収を高めるように黒色処理されている。そして、この載置台５８には、図３にも示すように、上記半導体ウエハＷの周辺のエッジ部に対応させて、この外周端部には周方向に沿って略均等に配置させて後述するリフトピンを通すための複数、図示例では３つのピン挿通部６０が形成されている。ここでは、各ピン挿通部６０は、外方へ解放された矩形状の切り欠きとして成形されている。   A cylindrical support column 50 is provided upright from the bottom of the processing vessel 36, and a rectifying plate 52 is provided on the outer periphery of the upper end of the support column 50 to adjust the gas flow downward. It has been. Further, on the inner peripheral side of the upper end of the support column 50, an attachment member 56 formed in the same ring shape (ring shape) made of quartz, for example, is supported on the inner side via an annular auxiliary ring 54 made of aluminum, for example. Is provided. As shown in FIG. 2, the mounting table 58 is supported by the inner peripheral edge of the attachment member 56. Specifically, the mounting table 58 is formed in a thin disk shape having a thickness of, for example, about 3.5 mm from ceramics, for example, aluminum nitride, and an object to be processed having the same diameter size on the upper surface side. The semiconductor wafer W can be placed. The back surface of the mounting table 58 is black-treated so as to increase the absorption of irradiation light. Further, as shown in FIG. 3, the mounting table 58 corresponds to the peripheral edge portion of the semiconductor wafer W, and the outer peripheral end portion is arranged substantially evenly along the circumferential direction as will be described later. A plurality of pin insertion portions 60 for passing the lift pins, in the illustrated example, are formed. Here, each pin insertion part 60 is shape | molded as the rectangular notch open | released outward.

また、上記アタッチメント部材５６の内側周縁部には、図４にも示すように所定の幅Ｗ１の係合段部６２が周方向に沿ってリング状に形成されており、この係合段部６２に上記ウエハＷの周縁部全体を上下に重なるような状態で設置することにより、載置台５８を保持するようになっている。これにより、ウエハＷの周縁部における熱的不均衡を抑制するようになっている。そして、この係合段部６２の上面には、その周方向に沿って所定の間隔で複数、図示例では６個のスペーサ部材６４（図４及び図５も参照）が配置されており、このスペーサ部材６４に載置台５８の周縁部の下面を直接的に当接させてこれを支持するようになっている。このスペーサ部材６４は例えば石英よりなり、その厚みは例えば０．５ｍｍ程度である。   Further, as shown in FIG. 4, an engagement step portion 62 having a predetermined width W1 is formed in a ring shape along the circumferential direction on the inner peripheral edge portion of the attachment member 56, and this engagement step portion 62. In addition, the mounting table 58 is held by installing the entire periphery of the wafer W so as to overlap each other. Thereby, the thermal imbalance in the peripheral part of the wafer W is suppressed. A plurality of spacer members 64 (see also FIGS. 4 and 5 in the illustrated example) are arranged on the upper surface of the engagement step portion 62 at predetermined intervals along the circumferential direction. The spacer member 64 is supported by directly contacting the lower surface of the peripheral portion of the mounting table 58. The spacer member 64 is made of, for example, quartz and has a thickness of, for example, about 0.5 mm.

また、上記係合段部６２には、上記載置台５８に形成したピン挿通部６０に対応させた位置に、同じく後述するリフトピンを通すための３つの切り欠き６６が形成されており、このピン挿通部６０と切り欠き６６の位置が一致するようにして上記載置台５８が支持される（図２参照）。
また、上記アタッチメント部材５６には、上記切り欠き６６の位置に対応させて、後述するクランプ部材を支持するロッド部材等を挿通させるためのロッド挿通孔６８がその周方向に沿って３つ形成されている。
そして、上記載置台５８の外側方向の斜め下方には、複数本、例えば３本のＬ字状になされたリフトピン７０が上方へ起立させて設けられており（図６参照）、このリフトピン７０を上下動させることにより、上記リフトピン７０を載置台５８に設けた３つの切り欠き状の挿通部６０及びアタッチメント部材５６に設けた切り欠き６６を通ってウエハＷを持ち上げ、或いは持ち下げ得るようになっている。 Further, the engagement step portion 62 is formed with three notches 66 for passing lift pins, which will be described later, at positions corresponding to the pin insertion portions 60 formed on the mounting table 58. The mounting table 58 is supported so that the positions of the insertion portion 60 and the notch 66 coincide (see FIG. 2).
The attachment member 56 is formed with three rod insertion holes 68 along the circumferential direction for inserting a rod member or the like for supporting a clamp member, which will be described later, corresponding to the position of the notch 66. ing.
In addition, a plurality of, for example, three L-shaped lift pins 70 are provided on the diagonally lower side in the outer direction of the mounting table 58 (see FIG. 6). By moving the lift pin 70 up and down, the wafer W can be lifted or lowered through the three cut-out insertion portions 60 provided on the mounting table 58 and the cut-out 66 provided in the attachment member 56. ing.

ここで図７にも示すように、リフトピン７０は、ウエハＷの周辺のエッジ部を支持できるように配置されている。具体的には、このリフトピン７０の直径Ｄ１は例えば５ｍｍ程度であるのに対して、上記載置台５８のピン挿通部６０の幅Ｗ２は例えば４ｍｍ程度である。そして、リフトピン７０の上端の一部でウエハＷを支持するようになっており、この時のウエハＷのエッジ部とリフトピン７０の上端の重なり幅Ｗ３は例えば３ｍｍ程度に設定されている。尚、ウエハＷの搬送位置精度は±０．２ｍｍ程度なので、上記寸法でもウエハＷの位置制御を十分に行うことができる。また、上記重なり幅Ｗ３は、ウエハＷの外周端面から最大５ｍｍ程度まで拡大させてもよい。これにより、ピン挿通部６０を通る後述する加熱ランプからの照射光がウエハＷに与える熱的影響をできるだけ抑制するようになっている。   Here, as also shown in FIG. 7, the lift pins 70 are arranged so as to support the peripheral edge portion of the wafer W. Specifically, the diameter D1 of the lift pin 70 is about 5 mm, for example, while the width W2 of the pin insertion portion 60 of the mounting table 58 is about 4 mm, for example. The wafer W is supported by a part of the upper end of the lift pin 70, and the overlap width W3 of the edge portion of the wafer W and the upper end of the lift pin 70 at this time is set to about 3 mm, for example. Since the transfer position accuracy of the wafer W is about ± 0.2 mm, the position control of the wafer W can be sufficiently performed even with the above dimensions. Further, the overlap width W3 may be increased from the outer peripheral end surface of the wafer W to a maximum of about 5 mm. Thereby, the thermal influence which the irradiation light from the heating lamp mentioned later passing through the pin insertion part 60 gives to the wafer W is suppressed as much as possible.

そして、上記載置台５８の外側斜め上方には、これに載置されるウエハＷを位置ずれしないようにウエハＷを保持するためのクランプ部材７２が設けられる。具体的には、このクランプ部材７２は、上記ウエハＷの直径よりも１廻り大きな直径を有し、且つその厚さが薄くなされてリング状に成形されている。このクランプ部材７２は、ウエハＷに対する金属汚染の恐れが非常に少なく、且つ耐熱性に優れてその熱伸縮量も小さな材料、例えば窒化アルミ等のセラミックにより形成されている。このクランプ部材７２の内側周縁部の下面がウエハＷの周縁部の上面と接触してこれを下方向へ押圧することによりウエハＷを載置台５８側へ押さえ付けている（図７参照）。   A clamp member 72 for holding the wafer W so as not to shift the position of the wafer W placed thereon is provided obliquely above and outside the mounting table 58. Specifically, the clamp member 72 has a diameter that is one turn larger than the diameter of the wafer W and is formed into a ring shape with a reduced thickness. The clamp member 72 is made of a material such as a ceramic such as aluminum nitride that has a very low risk of metal contamination on the wafer W, has excellent heat resistance, and has a small amount of thermal expansion and contraction. The lower surface of the inner peripheral edge of the clamp member 72 comes into contact with the upper surface of the peripheral edge of the wafer W and presses it downward, thereby pressing the wafer W toward the mounting table 58 (see FIG. 7).

このリング状のクランプ部材７２には、これにウエハ押圧時の弾発力を付与するための弾発機構部７４が取り付けられている（図７参照）。この弾発機構部７４は、上端部が上記クランプ部材７２に連結されたシャフト部材７６と、このシャフト部材７６の下端部に係合された弾発部材７８と、この弾発部材７８を収容する例えば石英製の弾発部材収容筒８０とにより主に構成されている。具体的には、上記シャフト部材７６は、クランプ部材７２の周方向に沿って略等間隔で３つ設けられており、図７に示すように各シャフト部材７６の上端部が上記クランプ部材７２にＣリング８２を介して取り付けられている。   The ring-shaped clamp member 72 is attached with a resilient mechanism 74 for applying a resilient force when the wafer is pressed (see FIG. 7). The impact mechanism 74 houses a shaft member 76 having an upper end connected to the clamp member 72, an impact member 78 engaged with the lower end of the shaft member 76, and the impact member 78. For example, it is mainly composed of a resilient member housing cylinder 80 made of quartz. Specifically, three shaft members 76 are provided at substantially equal intervals along the circumferential direction of the clamp member 72, and the upper end portion of each shaft member 76 is connected to the clamp member 72 as shown in FIG. 7. It is attached via a C ring 82.

上記弾発部材収容筒８０は、前述のように円筒体状に成形されており、その外側の一部には、上方へ突出したストッパ突部８４が形成されている。そして、この弾発部材収容筒８０内に上記シャフト部材７６の基部が収容される。このシャフト部材７６は、例えばＮｉ合金等の金属材料よりなり、下方へは直径が小さくなされた芯棒８６が延びている。この芯棒８６は、この弾発部材収容筒８０内の、その内径を小さくしたストッパ部８８の開口を介して下方に延びている。そして、この芯棒８６に、コイルバネのような上記弾発部材７８をやや圧縮した状態で装着してその下端にストッパ部材９０とＣリング９２を取り付けている。これにより、上記シャフト部材７６は常時下方向へ付勢された状態となっている。   The elastic member housing cylinder 80 is formed in a cylindrical shape as described above, and a stopper protrusion 84 protruding upward is formed on a part of the outside thereof. The base portion of the shaft member 76 is accommodated in the elastic member accommodating cylinder 80. The shaft member 76 is made of a metal material such as Ni alloy, for example, and a core rod 86 having a small diameter extends downward. The core rod 86 extends downward through an opening of a stopper portion 88 having a smaller inner diameter in the elastic member housing cylinder 80. The elastic member 78 such as a coil spring is attached to the core rod 86 in a slightly compressed state, and a stopper member 90 and a C ring 92 are attached to the lower ends thereof. Thereby, the shaft member 76 is always urged downward.

そして、この弾発部材収容筒８０の下部の内側には、上記リフトピン７０が容器中心側に向けて取り付け固定され、両者は一体的になされている。また、この弾発部材収容筒８０の下部の外側には、例えば石英製のアーム部材９４が水平方向外方に向けて取り付け固定されている。そして、各アーム部材９４は、円形リング状に成形された例えば酸化アルミニウム等のセラミックよりなる保持板９６に連結されており（図６参照）、この保持板９６の一側の下面は、上下方向に延びる一本の昇降ロッド９８の上端に接合固定されて片持ち支持されている。この昇降ロッド９８の下端は、処理容器３６内の気密状態を保持するために伸縮可能なベローズ１００（図１参照）を介して図示しないアクチュエータに接続されている。   The lift pin 70 is attached and fixed toward the center of the container inside the lower portion of the elastic member housing cylinder 80, and both are integrally formed. Further, an arm member 94 made of, for example, quartz is attached and fixed outwardly in the horizontal direction on the outer side of the lower portion of the elastic member housing cylinder 80. Each arm member 94 is connected to a holding plate 96 made of a ceramic such as aluminum oxide formed in a circular ring shape (see FIG. 6), and the lower surface on one side of the holding plate 96 has a vertical direction. Are joined and fixed to the upper end of a single lifting rod 98 extending in a cantilevered manner. The lower end of the elevating rod 98 is connected to an actuator (not shown) via a bellows 100 (see FIG. 1) that can be expanded and contracted to maintain an airtight state in the processing container 36.

また、載置台５８の直下の処理容器底部には、石英等の熱線透過材料よりなる透過窓１０２がＯリング等のシール部材１０４を介して気密に設けられており、この下方には、透過窓１０２を囲むように箱状のランプ室１０６が設けられている。このランプ室１０６内には加熱手段として複数の加熱ランプ１０８が反射鏡も兼ねる回転台１１０に取り付けられており、この回転台１１０は回転可能になされる。従って、この加熱ランプ１０８より放出された照射光（熱線）は、透過窓１０２を透過して載置台５８の下面を照射してこれを加熱し得るようになっている。   Further, a transmission window 102 made of a heat ray transmission material such as quartz is airtightly provided through a sealing member 104 such as an O-ring at the bottom of the processing vessel directly below the mounting table 58, and below this transmission window A box-shaped lamp chamber 106 is provided so as to surround 102. In the lamp chamber 106, a plurality of heating lamps 108 are attached as a heating means to a turntable 110 that also serves as a reflecting mirror, and the turntable 110 is rotatable. Accordingly, the irradiation light (heat rays) emitted from the heating lamp 108 can pass through the transmission window 102 and irradiate the lower surface of the mounting table 58 to heat it.

また、処理容器３６内の底部であって、上記支持コラム５０の内側には、例えばアルミニウムにより円筒体状に成形された反射部材１１２が設けられている。この反射部材１１２の直径は、半導体ウエハＷの直径よりもやや大きく設定されており、その内側１１２Ａが鏡面仕上げされて、斜め下方よりこの鏡面に当たった照射光を載置台５８の裏面側へ反射し得るようになっている。この反射部材１１２は所定の厚み、例えばＷ４＝１５ｍｍ程度（図８参照）の厚みに設定されており、その上端は、上記アタッチメント部材５６の直下近傍まで延びている。そして、この反射部材１１２の上部には、例えば矩形状に切り欠くことによって形成された部材収容空間１１４が、その周方向に沿って所定の間隔で複数個、図８に示す例では３つ設けられている。そして、この部材収容空間１１４内に、図９にも示すように上記弾発部材収容筒８０を略完全に収容されている。従って、この部材収容空間１１４の高さは上記弾発部材収容筒８０の昇降移動を許容できるような高さに設定されている。   In addition, a reflection member 112 formed in a cylindrical shape with, for example, aluminum is provided at the bottom of the processing container 36 and inside the support column 50. The diameter of the reflecting member 112 is set to be slightly larger than the diameter of the semiconductor wafer W. The inner surface 112A of the reflecting member 112 is mirror-finished, and the irradiation light hitting the mirror surface is reflected from the lower side to the back side of the mounting table 58. It has come to be able to do. The reflecting member 112 is set to a predetermined thickness, for example, a thickness of about W4 = 15 mm (see FIG. 8), and its upper end extends to the vicinity immediately below the attachment member 56. In the upper part of the reflecting member 112, a plurality of member accommodating spaces 114 formed by, for example, rectangular cutting are provided at predetermined intervals along the circumferential direction, and three in the example shown in FIG. It has been. Then, as shown in FIG. 9, the elastic member accommodating cylinder 80 is substantially completely accommodated in the member accommodating space 114. Therefore, the height of the member accommodating space 114 is set to a height that allows the upward and downward movement of the elastic member accommodating cylinder 80.

これにより、加熱ランプ１０８から射出される照射光は、上記弾発部材収容筒８０に遮断されることなく、載置台５８の裏面に直接的に当たるので、弾発部材収容筒８０が存在することによりウエハＷに与える熱的悪影響をできるだけ抑制するようになっている。また、上記反射部材１１２の下部には、載置台５８の下方にバックサイドガスとして例えばＡｒガスを導入するためのバックサイドガス供給手段１１５が設けられている。具体的には、このバックサイドガス供給手段１１５は、上記載置台５８の下方の空間に連通されたガス導入路１１６を有しており、このガス導入路１１６を図示しないガス源に接続して、Ａｒガスを流量制御しつつ供給できるようになっている。   As a result, the irradiation light emitted from the heating lamp 108 directly hits the back surface of the mounting table 58 without being blocked by the elastic member housing cylinder 80, so that the elastic member housing cylinder 80 is present. The thermal adverse effect on the wafer W is suppressed as much as possible. A backside gas supply means 115 for introducing, for example, Ar gas as a backside gas is provided below the mounting member 58 below the reflecting member 112. Specifically, the backside gas supply means 115 has a gas introduction path 116 communicated with the space below the mounting table 58, and the gas introduction path 116 is connected to a gas source (not shown). , Ar gas can be supplied while controlling the flow rate.

次に、以上のように構成された本実施例の動作について説明する。
まず、ロードロックロック室、或いは搬送室内に収容されている未処理の半導体ウエハＷを、開放されたゲートバルブＧを介して処理容器３６内へ搬入し、リフトピン７０を押し上げた状態で上記ウエハＷをリフトピン７０側に受け渡す。そして、このリフトピン７０を、昇降ロッド９８を下げることによって降下させてウエハＷを持ち下げ、このウエハＷを載置台５８上に載置すると共に更に昇降ロッド９８を下げることによってウエハＷの周縁部をクランプ部材７２の内側端部で押圧してこれを固定する。 Next, the operation of the present embodiment configured as described above will be described.
First, an unprocessed semiconductor wafer W accommodated in the load lock lock chamber or the transfer chamber is loaded into the processing container 36 through the opened gate valve G, and the wafer W is pushed up while the lift pins 70 are pushed up. Is transferred to the lift pin 70 side. The lift pins 70 are lowered by lowering the lift rod 98 to lift the wafer W. The wafer W is placed on the mounting table 58 and the lift rod 98 is further lowered to lower the peripheral portion of the wafer W. The inner end of the clamp member 72 is pressed to fix it.

このようにして、ウエハＷを載置台５８上に載置固定したならば、処理容器３６内を密閉し、そして、処理容器３６内を真空排気しつつランプ室１０６内の加熱ランプ１０８を点灯しながら回転させ、熱エネルギである照射光を放射する。放射された照射光は、透過窓１０２を透過した後、載置台５８の裏面を照射してこれを加熱する。この載置台５８は、前述のように３．５ｍｍ程度と非常に薄いことから迅速に加熱され、従って、この上に載置してあるウエハＷを迅速に所定の温度まで加熱することができる。
ウエハＷがプロセス温度に達したならば、例えばタングステン膜を形成するならば処理ガスとして例えば成膜ガスであるＷＦ６ ガスやＨ２ ガス等をシャワーヘッド部３８より処理容器３６内の処理空間Ｓへ供給し、タングステン膜などの成膜処理を所定の時間行うことになる。この成膜処理中、バックサイドガス供給手段１１５のガス導入路１１６を介して載置台５８の下方の空間へはバックサイドガスとして例えばＡｒガスが流量制御しつつ供給されており、この空間内へ処理ガスが侵入して載置台５８の裏面（下面）や透過窓１０２の上面に不要な膜が堆積することを防止している。そして、成膜処理が完了したならば、上記した操作と逆の処理を行って、処理済みのウエハＷを処理容器３６の外へ搬出することになる。 When the wafer W is placed and fixed on the mounting table 58 in this way, the inside of the processing container 36 is sealed, and the heating lamp 108 in the lamp chamber 106 is turned on while the inside of the processing container 36 is evacuated. Rotate while radiating the irradiation light, which is thermal energy. The emitted irradiation light passes through the transmission window 102 and then irradiates the back surface of the mounting table 58 to heat it. Since the mounting table 58 is as thin as about 3.5 mm as described above, the mounting table 58 is rapidly heated. Therefore, the wafer W mounted thereon can be rapidly heated to a predetermined temperature.
If the wafer W reaches the process temperature, for example, if a tungsten film is to be formed, for example, WF 6 gas or H 2 gas, which is a film forming gas, is used as a processing gas from the shower head unit 38 in the processing space S in the processing container 36. Then, a film forming process such as a tungsten film is performed for a predetermined time. During the film forming process, Ar gas, for example, is supplied as a backside gas to the space below the mounting table 58 through the gas introduction path 116 of the backside gas supply means 115 while controlling the flow rate. This prevents the processing gas from entering and depositing unnecessary films on the back surface (lower surface) of the mounting table 58 and the upper surface of the transmission window 102. When the film forming process is completed, a process reverse to the above-described operation is performed, and the processed wafer W is carried out of the processing container 36.

このような状況下において、まず、加熱ランプ１０８からの照射光は、透過窓１０２を透過した後に載置台５８の黒色処理された裏面に直接照射されてこれを加熱する。また、これと同時に、載置台５８のピン挿通部６０を通過した照射光はウエハＷの裏面を照射してこれを透過する傾向になる。なぜなら、ウエハＷは載置台５８と比較して光透過率が遥かに大きいからである。
しかしながら、本実施例では第１の特徴的構成として上記ピン挿通部６０は図１及び図７にも示すように、ウエハＷのエッジ部に対応させるようにして設けているので、図２１に示す従来装置のようにピン孔１４を載置台４の外周端面よりもかなり内側に設けた場合と異なり、下方からの照射光が上記ピン挿通部６０を通過して直接的にウエハＷの裏面に照射されても、この部分がウエハＷに与える熱的悪影響を大幅に抑制することが可能となる。換言すれば、ウエハＷのエッジ部の僅か数ｍｍ程度の部分の温度が低くても、ウエハ全体の加熱温度分布に悪影響を与えることを抑制することができる。これにより、ウエハＷの面内処理の均一性を向上させることが可能となる。 Under such circumstances, first, the irradiation light from the heating lamp 108 passes through the transmission window 102 and then directly irradiates the black treated back surface of the mounting table 58 to heat it. At the same time, the irradiation light that has passed through the pin insertion portion 60 of the mounting table 58 tends to irradiate and transmit the back surface of the wafer W. This is because the wafer W has a much higher light transmittance than the mounting table 58.
However, in this embodiment, as the first characteristic configuration, the pin insertion portion 60 is provided so as to correspond to the edge portion of the wafer W as shown in FIG. 1 and FIG. Unlike the case where the pin hole 14 is provided on the inner side of the outer peripheral end surface of the mounting table 4 as in the conventional apparatus, the irradiation light from below passes through the pin insertion portion 60 and directly irradiates the back surface of the wafer W. Even if this is done, it is possible to greatly suppress the adverse thermal effects of this portion on the wafer W. In other words, even if the temperature of only a few millimeters of the edge portion of the wafer W is low, adverse effects on the heating temperature distribution of the entire wafer can be suppressed. Thereby, the uniformity of the in-plane processing of the wafer W can be improved.

また、加熱ランプ１０８からの照射光が載置台５８の裏面を照射する際、図１６に示す従来装置の場合には載置台４は支持突起３０Ａで部分的に支持されていたことから載置台４の周縁部の方向に沿って温度の高い所と温度の低い所が発生して、これがためにウエハＷの加熱温度分布に悪影響を与えていた。
これに対して、本実施例では、第２の特徴的構成として図１及び図２にも示すように、載置台５８の周縁部は、その全周に亘ってアタッチメント部材の内側周縁部と上下に重なるようにして支持されているので、載置台５８の周縁部に沿って温度が均一に分布することになり、載置台５８の加熱温度分布特性に与える悪影響を抑制することができる。この結果、ウエハＷの面内処理の均一性を向上させることができる。 Further, when the irradiation light from the heating lamp 108 irradiates the back surface of the mounting table 58, the mounting table 4 is partially supported by the support protrusion 30A in the case of the conventional apparatus shown in FIG. There are places where the temperature is high and where the temperature is low along the direction of the peripheral edge of the wafer, which adversely affects the heating temperature distribution of the wafer W.
On the other hand, in the present embodiment, as shown in FIGS. 1 and 2 as a second characteristic configuration, the peripheral portion of the mounting table 58 is vertically aligned with the inner peripheral portion of the attachment member over the entire periphery. Therefore, the temperature is uniformly distributed along the peripheral edge of the mounting table 58, and adverse effects on the heating temperature distribution characteristics of the mounting table 58 can be suppressed. As a result, the uniformity of in-plane processing of the wafer W can be improved.

更には、加熱ランプ１０８からの照射光が載置台５８の裏面を照射する際、図２１に示す従来装置の場合には、弾発部材収容筒１８に直接的に照射光が当たることから、このため弾発部材収容筒１８の影が発生してこれがためにこの影が投影された部分に温度低下が生じてウエハＷの加熱温度分布に悪影響を与えていた。
これに対して、本実施例では第３の特徴的構成として図１、図８及び図９に示すように、弾発部材収容筒８０を円筒体状の反射部材１１２の上部に形成した切り込み状の部材収容空間１１４内へ収容した状態となるように設けるようにしたので、弾発部材収容筒８０の影が載置台５８側へ投影されることがなくなり、載置台５８の加熱温度分布特性に与える悪影響を抑制することができる。この結果、ウエハＷの面内処理の均一性を向上させることができる。 Furthermore, when the irradiation light from the heating lamp 108 irradiates the back surface of the mounting table 58, in the case of the conventional apparatus shown in FIG. Therefore, a shadow of the elastic member housing cylinder 18 is generated, and this causes a temperature drop in the projected portion, which adversely affects the heating temperature distribution of the wafer W.
On the other hand, in this embodiment, as shown in FIGS. 1, 8, and 9 as a third characteristic configuration, a resilient member housing cylinder 80 is formed in a cut shape formed on the upper part of the cylindrical reflecting member 112. Therefore, the shadow of the resilient member accommodating cylinder 80 is not projected to the mounting table 58 side, and the heating temperature distribution characteristics of the mounting table 58 are reduced. The adverse effect can be suppressed. As a result, the uniformity of in-plane processing of the wafer W can be improved.

ここで前述した３つの各特徴的な構成とこれらの組み合わせについて、それぞれ評価を行ったので、その評価結果について説明する。
図１０は本発明の第１の特徴的構成を採用した処理装置と従来装置とを用いて半導体ウエハを処理した時のウエハ周縁部における処理の均一性を示すグラフ、図１１は本発明の第２の特徴的構成を採用した処理装置と従来装置とを用いて半導体ウエハを処理した時のウエハ周縁部における処理の均一性を示すグラフ、図１２は本発明の第３の特徴的構成を採用した処理装置と従来装置とを用いて半導体ウエハを処理した時のウエハ周縁部における処理の均一性を示すグラフ、図１３は本発明の各特徴的構成を組み合わせて採用した処理装置と従来装置とを用いて半導体ウエハを処理した時のウエハ周縁部における処理の均一性を示すグラフである。 Here, each of the above-described three characteristic configurations and combinations thereof were evaluated, and the evaluation results will be described.
FIG. 10 is a graph showing the uniformity of processing at the periphery of the wafer when a semiconductor wafer is processed using the processing apparatus employing the first characteristic configuration of the present invention and the conventional apparatus, and FIG. FIG. 12 is a graph showing the uniformity of processing at the peripheral edge of a wafer when a semiconductor wafer is processed using the processing apparatus adopting the characteristic configuration 2 and the conventional apparatus, and FIG. 12 adopts the third characteristic configuration of the present invention. FIG. 13 is a graph showing the uniformity of processing at the peripheral edge of a wafer when a semiconductor wafer is processed using the processed apparatus and the conventional apparatus. FIG. 5 is a graph showing the uniformity of processing at the peripheral edge portion of a wafer when a semiconductor wafer is processed using a wafer.

尚、ここでは処理の面内均一性を評価する基準として比抵抗（Ｒｓ）を用いており、また各図において従来装置の場合の処理の面内均一性を曲線Ｙとして表している。また、ウエハＷの周方向に沿って９０度、２１０度、３３０度の位置にピン孔１４或いはピン挿通部６０を設けている。
図１０に示すように、従来装置の場合には、ピン孔１４を設けた９０度、２１０度、３３０度において比抵抗は極端に大きくなってピークを示しており、また、処理の面内均一性も±５．７２％と、かなり劣った値を示している。これに対して、本発明の第１の特徴的構成（リフトピン７０をウエハのエッジ部に配置）の場合には、曲線Ｘ１に示すようにピン挿通部６０における比抵抗のピーク値はそれぞれかなり低下しており、且つボトム部分もかなり底上げされた部分もあり、その処理の面内均一性は±４．３３％になって、従来装置の場合よりも１．３９％改善されているのが判明した。 Here, the specific resistance (Rs) is used as a reference for evaluating the in-plane uniformity of the process, and the in-plane uniformity of the process in the case of the conventional apparatus is represented as a curve Y in each figure. Further, pin holes 14 or pin insertion portions 60 are provided at positions of 90 degrees, 210 degrees, and 330 degrees along the circumferential direction of the wafer W.
As shown in FIG. 10, in the case of the conventional apparatus, the specific resistance becomes extremely large and shows a peak at 90 degrees, 210 degrees, and 330 degrees where the pin holes 14 are provided. The property is also inferior to ± 5.72%. On the other hand, in the case of the first characteristic configuration of the present invention (lift pins 70 are arranged at the edge portion of the wafer), the peak value of the specific resistance in the pin insertion portion 60 is considerably reduced as shown by the curve X1. In addition, the bottom part is also partly raised, and the in-plane uniformity of the processing is ± 4.33%, which is found to be improved by 1.39% compared to the conventional apparatus. did.

また、図１１に示すように、本発明の第２の特徴的構成（載置台５８の周縁部全周をアタッチメント部材とオーバラップ）の場合には、曲線Ｘ２に示すように、ピン挿通部６０における比抵抗のピーク値はそれぞれかなり低下しており、その処理の面内均一性は±４．４５％になって、従来装置の場合よりも１．２７％改善されているのが判明した。
更に、図１２に示すように、本発明の第３の特徴的構成（反射部材１１２の部材収容空間１１４に弾発部材収容筒８０を収容）の場合には、曲線Ｘ３に示すように、ピン挿通部６０における比抵抗のピーク値はそれ程低下していないが、ボトム部分の値がかなり底上げされ、その処理の面内均一性は±４．８７％になって、従来装置の場合よりも０．８５％改善されているのが判明した。 As shown in FIG. 11, in the case of the second characteristic configuration of the present invention (the entire periphery of the mounting table 58 is overlapped with the attachment member), as shown by the curve X2, the pin insertion portion 60 The peak values of the specific resistance in each of the samples were considerably lowered, and the in-plane uniformity of the treatment was ± 4.45%, which was found to be improved by 1.27% over the conventional apparatus.
Furthermore, as shown in FIG. 12, in the case of the third characteristic configuration of the present invention (the elastic member accommodating cylinder 80 is accommodated in the member accommodating space 114 of the reflecting member 112), as shown in the curve X3, the pin Although the peak value of the specific resistance in the insertion portion 60 has not decreased so much, the value of the bottom portion is considerably raised, and the in-plane uniformity of the processing becomes ± 4.87%, which is 0 as compared with the conventional device. It was found to be improved by 85%.

また、図１３において、曲線Ｚ１は本発明の第２及び第３の特徴的構成を組み合わせた場合のグラフを示し、曲線Ｚ２は本発明の第１〜第３の全ての特徴的構成を組み合わせた場合（図１に相当）のグラフを示している。
図示するように、曲線Ｚ１及びＺ２ともに従来装置の場合と比較してピーク値は抑制され、且つボトム値はかなり底上げされている。そして、曲線Ｚ１の場合には処理の面内均一性は±３．７９％になって、１．９３％改善されており、曲線Ｚ２の場合には処理の面内均一性は±２．８７％になって、２．８５％も改善されていることが判明した。
このように、特に本発明の第１〜第３の特徴的構成を全て採用することにより、ウエハ処理の面内均一性を大幅に改善できることが判明した。 Further, in FIG. 13, a curve Z1 shows a graph when the second and third characteristic configurations of the present invention are combined, and a curve Z2 combines all the first to third characteristic configurations of the present invention. The graph of the case (equivalent to FIG. 1) is shown.
As shown in the figure, both the curves Z1 and Z2 have a peak value suppressed and a bottom value considerably raised compared to the case of the conventional apparatus. In the case of the curve Z1, the in-plane uniformity of processing is ± 3.79%, which is improved by 1.93%. In the case of the curve Z2, the in-plane uniformity of processing is ± 2.87. %, It was found that the improvement was 2.85%.
Thus, it has been found that the in-plane uniformity of wafer processing can be greatly improved by employing all the first to third characteristic configurations of the present invention.

尚、上記実施例の場合には、載置台５８の直径が、ウエハＷの直径の場合と略同一の場合を例にとって説明したが、ウエハＷの直径よりも載置台５８の直径がかなり大きい場合には、図１４に示すように、ピン挿通部６０は切り欠き状ではなく、載置台５８の周縁部に貫通孔として形成することになる。この場合、当然のこととして、図３に示す場合と図１４に示す場合とで、載置台５８の中心部からピン挿通部６０までの距離は共に同一になるように設定されている。   In the above embodiment, the case where the diameter of the mounting table 58 is substantially the same as the diameter of the wafer W has been described as an example, but the diameter of the mounting table 58 is considerably larger than the diameter of the wafer W. In other words, as shown in FIG. 14, the pin insertion portion 60 is not a notch, but is formed as a through hole in the peripheral portion of the mounting table 58. In this case, as a matter of course, the distance from the center portion of the mounting table 58 to the pin insertion portion 60 is set to be the same in both the case shown in FIG. 3 and the case shown in FIG.

次に、本発明の他の実施例について説明する。
図１５は本発明の処理装置の他の実施例を示す断面図、図１６は他の実施例における載置台とアタッチメント部材と温度測定用検出子の取り付け状態を示す平面図、図１７は他の実施例におけるアタッチメント部材と温度測定用検出子との取り付け状態を示す平面図、図１８は温度測定用検出子の挿入された温度測定穴を示す部分拡大断面図である。尚、図１〜図５に示した構成部分と同一構成部分については同一符号を付してその説明を省略する。
図１では図示されていないが、通常の処理装置では載置台の温度を検出してこの温度制御を行うために、載置台の外周端部の側面に、これより水平方向に向けて延びる温度測定穴を形成し、この温度測定穴に熱電対や光ファイバのロッドを挿入して温度を検出するようになっている。しかし、この場合、載置台の下方にバックサイドガスを供給して載置台の下方を、この上方の処理空間よりも僅かに陽圧状態にしているが、載置台の外周端部とアタッチメント部材の内側周縁部との間に形成される隙間は僅かなので、処理空間側の処理ガスが上記隙間部分に逆拡散してくる傾向にあり、この逆拡散してきた処理ガスが上記載置台の外周端部の側面に開口させて形成されている温度測定穴内にも入ってきて、穴内部で不要な堆積膜の形成や腐食を発生させる原因となる。そこで、以下に説明するこの他の実施例では上記温度測定穴内に処理ガスが侵入することがないような構成としている。 Next, another embodiment of the present invention will be described.
FIG. 15 is a cross-sectional view showing another embodiment of the processing apparatus of the present invention, FIG. 16 is a plan view showing the mounting state of the mounting table, attachment member, and temperature measurement detector in another embodiment, and FIG. The top view which shows the attachment state of the attachment member in the Example and the detector for temperature measurement, FIG. 18 is a partial expanded sectional view which shows the temperature measurement hole in which the detector for temperature measurement was inserted. In addition, about the same component as the component shown in FIGS. 1-5, the same code | symbol is attached | subjected and the description is abbreviate | omitted.
Although not shown in FIG. 1, in a normal processing apparatus, in order to detect the temperature of the mounting table and perform this temperature control, the temperature measurement extends in the horizontal direction from the side surface of the outer peripheral end of the mounting table. A hole is formed, and a temperature is detected by inserting a thermocouple or optical fiber rod into the temperature measurement hole. However, in this case, the backside gas is supplied to the lower side of the mounting table so that the lower side of the mounting table is slightly more positive than the processing space above this, but the outer peripheral end of the mounting table and the attachment member Since the gap formed between the inner peripheral edge and the inner peripheral edge is small, the processing gas on the processing space side tends to reversely diffuse into the gap, and the reversely diffused processing gas is at the outer peripheral edge of the mounting table. It also enters into the temperature measurement hole formed in the side surface of the substrate, causing unnecessary deposition film formation and corrosion inside the hole. Therefore, in another embodiment described below, the process gas is prevented from entering the temperature measurement hole.

図１５に示すように、この処理装置１２０は、以下に説明する点を除き、図１に示した処理装置３４と全く同様に構成されているので、同一構成部分については同一符号を付して説明を省略する。
この処理装置１２０の薄板円板状の載置台５８の外周端部の側面には、この載置台５８の内部に向けて２つの温度測定穴１２２、１２４（図１６及び図１８参照）が設けられている。この内、一方の温度測定穴１２２の長さは短くてその先端は載置台５８の外側端部より僅かに内側に入ったところに位置されている。これに対して、他方の温度測定穴１２４の長さは長く水平方向に延びており、その先端は載置台５８の略中央部に位置されている。そして、各温度測定穴１２２、１２４内には、その外側に位置するリング状のアタッチメント部材５６側より水平に延びるようにしてそれぞれ温度測定用検出子１２６、１２８がその先端まで挿入されている。これにより、載置台５８の中心部の温度と周辺部の温度をそれぞれ測定し得るようになっている。 As shown in FIG. 15, this processing device 120 is configured in exactly the same way as the processing device 34 shown in FIG. 1 except for the points described below. Description is omitted.
Two temperature measurement holes 122 and 124 (see FIGS. 16 and 18) are provided on the side surface of the outer peripheral end of the thin disk-shaped mounting table 58 of the processing device 120 toward the inside of the mounting table 58. ing. Among these, the length of one temperature measurement hole 122 is short, and the tip thereof is located slightly inside the outer end of the mounting table 58. On the other hand, the other temperature measurement hole 124 has a long length and extends in the horizontal direction, and its tip is located at a substantially central portion of the mounting table 58. In each of the temperature measurement holes 122 and 124, temperature measurement detectors 126 and 128 are inserted to the tips of the temperature measurement holes 122 and 124 so as to extend horizontally from the ring-shaped attachment member 56 side located outside. Thereby, the temperature of the center part of the mounting base 58 and the temperature of a peripheral part can be measured, respectively.

尚、図１５においては、一方の温度測定用検出子１２６のみを記載し、他方の温度測定用検出子１２８の記載は省略している。そして、上記各温度測定用検出子１２６、１２８は、温度測定ユニット１３０に接続されており、ここで実際に温度が検出されるようになっている。そして、この温度測定ユニット１３０で検出された温度は、例えばマイクロコンピュータ等よりなる温度制御部１３２へ入力され、これに基づいて加熱ランプ１０８への供給電力を制御することにより、上記載置台５８の温度コントロールがなされることになる。   In FIG. 15, only one temperature measurement detector 126 is shown, and the other temperature measurement detector 128 is not shown. The temperature measuring detectors 126 and 128 are connected to the temperature measuring unit 130, where the temperature is actually detected. The temperature detected by the temperature measuring unit 130 is input to a temperature control unit 132 made of, for example, a microcomputer, and the power supplied to the heating lamp 108 is controlled based on the detected temperature. Temperature control will be done.

ここで上記温度測定用検出子１２６、１２８としては、光ファイバのロッドや熱電対が用いられる。光ファイバのロッドを温度測定用検出子１２６、１２８として用いた場合には、このロッド内に侵入した特定波長、例えば赤外光が、上記光ファイバを介して上記温度測定ユニット１３０へ伝送され、ここでフォトトランジスタ等により光電変換されることになる。尚、設ける温度測定用検出子の数は２個に限定されず、更に多くの温度測定用検出子を用いて、載置台を複数の同心円状の領域に区画して、各区画毎に温度を測定してきめの細かな温度制御を行うようにしてもよい。   Here, as the temperature measuring detectors 126 and 128, an optical fiber rod or a thermocouple is used. When an optical fiber rod is used as the temperature measurement detectors 126 and 128, a specific wavelength that has penetrated into the rod, for example, infrared light, is transmitted to the temperature measurement unit 130 via the optical fiber, Here, photoelectric conversion is performed by a phototransistor or the like. The number of temperature measurement detectors to be provided is not limited to two, and the number of temperature measurement detectors is used to divide the mounting table into a plurality of concentric regions, and the temperature is set for each division. Fine temperature control may be performed by measuring.

そして、上記温度測定穴１２２、１２４を形成した載置台５８の外周端部及びこの温度測定穴１２２、１２４を臨む上記アタッチメント部材５６の内側周縁部の内の少なくともいずれか一方に、上記載置台５８の下方より上方の処理空間Ｓに向かうバックサイドガスの通りを促進させるガス流促進切り欠きが設けられている。具体的には、ここでは図１６〜図１８に示すように、上記温度測定穴１２２、１２４を臨む、或いはこれに対向するアタッチメント部材５６の内側周縁部に小さな略矩形状のガス流促進切り欠き１３６、１３８をそれぞれ形成している。これにより、この温度測定穴１２２、１２４の開口部において上方の処理空間Ｓと載置台５８の下方の空間とを連通する隙間が広くなり、上方向へのバックサイドガスの流れを促進させることが可能となる。この場合、このガス流促進切り欠き１３６、１３８の大きさは、例えば縦横が３ｍｍ×６ｍｍ程度であって非常に小さくなされており、ウエハＷの表面に堆積される薄膜の膜厚の面内均一性に悪影響を与えないようになっている。   The mounting table 58 is provided on at least one of the outer peripheral end of the mounting table 58 in which the temperature measuring holes 122 and 124 are formed and the inner peripheral edge of the attachment member 56 facing the temperature measuring holes 122 and 124. A gas flow promoting notch for promoting the passage of the backside gas toward the processing space S above the lower side is provided. Specifically, as shown in FIGS. 16 to 18, here, a small substantially rectangular gas flow promoting cutout is formed at the inner peripheral edge of the attachment member 56 facing the temperature measurement holes 122, 124 or facing the temperature measurement holes 122, 124. 136 and 138 are formed. As a result, the gap that communicates the upper processing space S and the lower space of the mounting table 58 at the opening of the temperature measurement holes 122 and 124 becomes wider, and the upward flow of the backside gas can be promoted. It becomes possible. In this case, the gas flow promoting cutouts 136 and 138 are very small, for example, about 3 mm × 6 mm in length and width, and the film thickness of the thin film deposited on the surface of the wafer W is uniform in the surface. It does not adversely affect sex.

また、ここで上記各温度測定用検出子１２６、１２８の直径は１ｍｍ程度であるのに対して、各温度測定穴１２２、１２４の内径は１．１〜１．５ｍｍ程度である。また載置台５８の厚さは、前述したように３．５ｍｍ程度である。また載置台５８の材質は、特に限定されないが、例えばセラミック（ＡｌＮ等）やアモルファスカーボン等が用いられる。
以上のように構成することにより、ウエハＷに対する成膜処理を行っている時、載置台５８の上方の処理空間Ｓに供給された成膜用の処理ガスは、拡散して上記各温度測定穴１２２、１２４内へ侵入してこようとする。しかしながら、本実施例においては、この温度測定穴１２２、１２４の開口部に対応する部分のアタッチメント部材５６に、ガス流促進切り欠き１３６、１３８を形成しているので、図１８中の破線矢印１４０、１４２に示すように、載置台５８の下方に供給されたバックサイドガスが、上記各ガス流促進切り欠き１３６、１３８を介して上方の処理空間Ｓ側に促進して流れることになる。このため、処理ガスが載置台５８の下方の空間側へ拡散して流れることを防止できるのは勿論のこと、この処理ガスが上記各温度測定穴１２２、１２４内へ拡散して侵入することも防止することができる。 Here, the diameter of each of the temperature measuring detectors 126 and 128 is about 1 mm, whereas the inner diameter of each of the temperature measuring holes 122 and 124 is about 1.1 to 1.5 mm. The thickness of the mounting table 58 is about 3.5 mm as described above. The material of the mounting table 58 is not particularly limited, and for example, ceramic (AlN or the like), amorphous carbon, or the like is used.
With the configuration as described above, when the film forming process is performed on the wafer W, the film forming process gas supplied to the processing space S above the mounting table 58 is diffused to each of the temperature measurement holes. It tries to penetrate into 122 and 124. However, in this embodiment, the gas flow promoting cutouts 136 and 138 are formed in the attachment member 56 corresponding to the openings of the temperature measurement holes 122 and 124, and therefore, the broken line arrow 140 in FIG. 142, the backside gas supplied below the mounting table 58 flows to the upper processing space S side through the gas flow promoting cutouts 136 and 138. For this reason, it is possible to prevent the processing gas from diffusing and flowing to the space side below the mounting table 58, and it is also possible for the processing gas to diffuse into and enter the temperature measurement holes 122 and 124. Can be prevented.

このため、各温度測定穴１２２、１２４内へ挿入された温度測定用検出子１２６、１２８の表面に不要な薄膜が堆積することを阻止でき、この結果、温度測定用検出子１２６、１２８での検出温度が不正確になることを防止して正確な温度を検出でき、また温度測定用検出子１２６、１２８が熱電対の場合にはこれが腐食したりすることを防止することができる。
尚、上記実施例ではガス流促進切り欠き１３６、１３８をアタッチメント部材５６の内側周縁部に設けたが、前述したように、内側周縁部に代えてこれを載置台５８の外周端部に設けるようにしてもよいし、或いは双方に設けるようにしてもよい。図１９及び図２０はガス流促進切り欠きを双方に設けた場合を示している。図１９は載置台の変形例を示す平面図、図２０は載置台の外周端部とこれを支持するアタッチメント部材と支持部分の拡大断面図である。 For this reason, it is possible to prevent unnecessary thin films from being deposited on the surfaces of the temperature measurement detectors 126 and 128 inserted into the temperature measurement holes 122 and 124. As a result, the temperature measurement detectors 126 and 128 It is possible to prevent the detection temperature from becoming inaccurate and to detect an accurate temperature, and it is possible to prevent the temperature measurement detectors 126 and 128 from being corroded when they are thermocouples.
In the above embodiment, the gas flow promoting notches 136 and 138 are provided on the inner peripheral edge of the attachment member 56. However, as described above, the gas flow promoting notches 136 and 138 are provided on the outer peripheral edge of the mounting table 58 instead of the inner peripheral edge. Alternatively, it may be provided on both sides. 19 and 20 show a case where gas flow promoting cutouts are provided on both sides. FIG. 19 is a plan view showing a modified example of the mounting table, and FIG. 20 is an enlarged cross-sectional view of the outer peripheral end of the mounting table, an attachment member that supports the outer peripheral edge, and a support portion.

ここでは、アタッチメント部材５６に形成した各ガス流促進切り欠き１３６、１３８（１３８は図示省略）に対応させて、載置台５８の外周端部には略矩形状の小さなガス流促進切り欠き１４４、１４６を設けている。これによれば、ウエハＷの表面に形成される薄膜の膜厚の面内均一性を劣化させない範囲で、バックサイドガスが流れる隙間の開口面積を大きくすることができる。
尚、本実施例では、処理として成膜処理を例にとって説明したが、これに限定されず、アニール処理、酸化拡散処理、プラズマ処理等にも、本発明を適用することができる。
また、上記実施例においては、被処理体として半導体ウエハを例にとって説明したが、これに限定されず、ガラス基板、ＬＣＤ基板等にも適用し得るのは勿論である。 Here, in correspondence with each gas flow promoting cutout 136, 138 (138 is not shown) formed in the attachment member 56, a small gas flow promoting cutout 144 having a substantially rectangular shape is formed at the outer peripheral end portion of the mounting table 58. 146 is provided. According to this, the opening area of the gap through which the backside gas flows can be increased within a range in which the in-plane uniformity of the thickness of the thin film formed on the surface of the wafer W is not deteriorated.
In this embodiment, the film forming process is described as an example of the process. However, the present invention is not limited to this, and the present invention can be applied to an annealing process, an oxidation diffusion process, a plasma process, and the like.
In the above-described embodiments, the semiconductor wafer is described as an example of the object to be processed. However, the present invention is not limited to this and can be applied to a glass substrate, an LCD substrate, or the like.

本発明に係る枚葉式の処理装置の一実施例を示す断面図である。It is sectional drawing which shows one Example of the single wafer type processing apparatus which concerns on this invention. 載置台とアタッチメント部材との取り付け状態を示す平面図である。It is a top view which shows the attachment state of a mounting base and an attachment member. 載置台を示す平面図である。It is a top view which shows a mounting base. アタッチメント部材を主体とする平面図である。It is a top view which mainly has an attachment member. 載置台の支持状態を示す部分拡大断面図である。It is a partial expanded sectional view which shows the support state of a mounting base. リフトピンと弾発機構部を示す斜視図である。It is a perspective view which shows a lift pin and a resilient mechanism part. リフトピンとクランプ部材の動作を説明するための動作説明図である。It is operation | movement explanatory drawing for demonstrating operation | movement of a lift pin and a clamp member. 反射部材を示す斜視図である。It is a perspective view which shows a reflection member. 反射部材と弾発機構部との位置関係を説明するための平面図である。It is a top view for demonstrating the positional relationship of a reflection member and a bulleting mechanism part. 本発明の第１の特徴的構成を採用した処理装置と従来装置とを用いて半導体ウエハを処理した時のウエハ周縁部における処理の均一性を示すグラフである。It is a graph which shows the processing uniformity in the wafer peripheral part when a semiconductor wafer is processed using the processing apparatus which employ | adopted the 1st characteristic structure of this invention, and the conventional apparatus. 本発明の第２の特徴的構成を採用した処理装置と従来装置とを用いて半導体ウエハを処理した時のウエハ周縁部における処理の均一性を示すグラフである。It is a graph which shows the uniformity of the process in the wafer peripheral part when processing a semiconductor wafer using the processing apparatus which employ | adopted the 2nd characteristic structure of this invention, and the conventional apparatus. 本発明の第３の特徴的構成を採用した処理装置と従来装置とを用いて半導体ウエハを処理した時のウエハ周縁部における処理の均一性を示すグラフである。It is a graph which shows the processing uniformity in the wafer peripheral part when processing a semiconductor wafer using the processing apparatus which employ | adopted the 3rd characteristic structure of this invention, and the conventional apparatus. 本発明の各特徴的構成を組み合わせて採用した処理装置と従来装置とを用いて半導体ウエハを処理した時のウエハ周縁部における処理の均一性を示すグラフである。It is a graph which shows the processing uniformity in the wafer peripheral part when a semiconductor wafer is processed using the processing apparatus employ | adopted combining each characteristic structure of this invention, and the conventional apparatus. 載置台の直径が被処理体の直径よりもかなり大きい場合のピン挿通部の形成位置を説明する図である。It is a figure explaining the formation position of the pin insertion part in case the diameter of a mounting base is considerably larger than the diameter of a to-be-processed object. 本発明の処理装置の他の実施例を示す断面図である。It is sectional drawing which shows the other Example of the processing apparatus of this invention. 他の実施例における載置台とアタッチメント部材と温度測定用検出子の取り付け状態を示す平面図である。It is a top view which shows the attachment state of the mounting base in another Example, an attachment member, and the detector for temperature measurement. 他の実施例におけるアタッチメント部材と温度測定用検出子との取り付け状態を示す平面図である。It is a top view which shows the attachment state of the attachment member in other Example, and the detector for temperature measurement. 温度測定用検出子の挿入された温度測定穴を示す部分拡大断面図である。It is a partial expanded sectional view which shows the temperature measurement hole in which the detector for temperature measurement was inserted. 載置台の変形例を示す平面図である。It is a top view which shows the modification of a mounting base. 載置台の外周端部とこれを支持するアタッチメント部材と支持部分の拡大断面図である。It is an expanded sectional view of the outer periphery edge part of a mounting base, the attachment member which supports this, and a support part. 一般的な枚葉式の処理装置を示す構成図である。It is a block diagram which shows a general single wafer processing apparatus. 載置台の部分を中心として示す平面図である。It is a top view which shows the part of a mounting base as a center.

３４ 処理装置
３６ 処理容器
３８ シャワーヘッド部
５６ アタッチメント部材
５８ 載置台
６０ ピン挿通部
６４ スペーサ部材
６６ 切り欠き
７０ リフトピン
７２ クランプ部材
７４ 弾発機構部
７６ シャフト部材
７８ 弾発部材
８０ 弾発部材収容筒
１０２ 透過窓
１０８ 加熱ランプ
１１２ 反射部材
１１４ 部材収容空間
１３６，１３８ ガス流促進切り欠き
Ｗ 半導体ウエハ（被処理体） 34 treatment device 36 treatment container 38 shower head part 56 attachment member 58 mounting table 60 pin insertion part 64 spacer member 66 notch 70 lift pin 72 clamp member 74 bullet mechanism part 76 shaft member 78 bullet member 80 bullet member housing cylinder 102 Transmission window 108 Heating lamp 112 Reflecting member 114 Member housing space 136, 138 Gas flow promoting cutout W Semiconductor wafer (object to be processed)

Claims (14)

処理容器内に設けられた薄板状の載置台にリフトピンを昇降させることによって被処理体を載置し、前記載置台をその下方に配置した加熱ランプにより加熱することにより前記被処理体を間接的に加熱して所定の処理を施すようにした枚葉式の処理装置において、
前記被処理体の周辺のエッジ部を支持できるように前記リフトピンを配置すると共に、前記載置台には前記エッジ部に対応する部分に前記昇降するリフトピンを通すためのピン挿通部が形成されていることを特徴とする枚葉式の処理装置。 The object to be processed is placed on a thin plate-like mounting table provided in the processing container by moving a lift pin up and down, and the object to be processed is indirectly heated by heating the mounting table with a heating lamp disposed below the mounting table. In a single wafer processing apparatus that is heated to perform a predetermined process,
The lift pins are arranged so as to support the peripheral edge portion of the object to be processed, and the mounting table is formed with a pin insertion portion for passing the lift pins that move up and down in a portion corresponding to the edge portion. A single wafer processing apparatus. 前記エッジ部は、前記被処理体の外周端面より５ｍｍ以内の範囲であることを特徴とする請求項１記載の枚葉式の処理装置。   2. The single wafer processing apparatus according to claim 1, wherein the edge portion is within a range of 5 mm from an outer peripheral end surface of the object to be processed. 前記ピン挿通部は、前記載置台の周縁部に形成した切り欠きにより構成されることを特徴とする請求項１または２記載の枚葉式の処理装置。   The single-wafer processing apparatus according to claim 1, wherein the pin insertion portion is formed by a notch formed in a peripheral portion of the mounting table. 前記ピン挿通部は、前記載置台の周縁部に形成した貫通孔により構成されることを特徴とする請求項１または２記載の枚葉式の処理装置。   The single-wafer processing apparatus according to claim 1, wherein the pin insertion portion is configured by a through hole formed in a peripheral portion of the mounting table. 処理容器内にリング状のアタッチメント部材を設け、該アタッチメント部材の内側周縁部により薄板円板状の載置台を支持させ、前記載置台上に被処理体を載置して前記載置台の下方に配置した加熱ランプにより前記被処理体を間接的に加熱して所定の処理を施すようにした枚葉式の処理装置において、
前記アタッチメント部材は、その内側周縁部と前記載置台の周縁部とが所定の幅でその周方向に沿って上下方向に重なるような状態で前記載置台を支持するように構成したことを特徴とする枚葉式の処理装置。 A ring-shaped attachment member is provided in the processing container, a thin disk-shaped mounting table is supported by the inner peripheral edge of the attachment member, and the object to be processed is mounted on the mounting table, below the mounting table. In a single wafer processing apparatus in which a predetermined processing is performed by indirectly heating the object to be processed by a arranged heating lamp,
The attachment member is configured to support the mounting table in a state in which the inner peripheral edge portion and the peripheral edge portion of the mounting table overlap with each other in a vertical direction along the circumferential direction with a predetermined width. Single wafer processing equipment. 前記アタッチメント部材の内側周縁部の上面と前記載置台の周縁部の下面との間には複数のスペーサ部材がその周方向に沿って適宜配置されていることを特徴とする請求項５記載の枚葉式の処理装置。   6. The sheet according to claim 5, wherein a plurality of spacer members are appropriately arranged along the circumferential direction between the upper surface of the inner peripheral edge of the attachment member and the lower surface of the peripheral edge of the mounting table. Leaf type processing equipment. 処理容器内に設けられた薄板状の載置台にリフトピンを昇降させることによって被処理体を載置し、前記被処理体の上面の周縁部に当接して弾発機構部により発生する弾性力により前記被処理体を前記載置台側に押圧して保持させるクランプ部材を設け、前記載置台をその下方に配置した加熱ランプにより加熱することにより前記被処理体を間接的に加熱して所定の処理を施すようにした枚葉式の処理装置において、
前記載置台の外側の下方に、前記加熱ランプからの照射光を前記載置台に向けて反射するために円筒体状に成形された所定の厚みの反射部材を設け、
前記反射部材の上部に、前記クランプ部材に弾発力を付与する前記弾発機構部を収容するための部材収容空間を形成するように構成したことを特徴とする枚葉式の処理装置。 The object to be processed is placed on a thin plate-like mounting table provided in the processing container by moving the lift pin up and down, and is brought into contact with the peripheral edge of the upper surface of the object to be processed by the elastic force generated by the elastic mechanism part. A clamp member is provided to press and hold the object to be processed toward the mounting table, and the processing object is indirectly heated by heating the mounting table with a heating lamp disposed below the predetermined object. In a single-wafer type processing apparatus that applies
Provided below the outer side of the mounting table is a reflecting member having a predetermined thickness formed in a cylindrical shape to reflect the irradiation light from the heating lamp toward the mounting table,
A single-wafer processing apparatus configured to form a member accommodating space for accommodating the resilient mechanism portion that imparts a resilient force to the clamp member at an upper portion of the reflecting member. 前記弾発機構部は、
石英製の弾発部材収容筒と、
該弾発部材収容筒内に収容された弾発部材と、
上端部が前記クランプ部材に連結されて下端部が前記弾発部材に係合されたシャフト部材とにより構成されることを特徴とする請求項７記載の枚葉式の処理装置。 The bullet mechanism part is
A resilient member housing cylinder made of quartz;
A resilient member housed in the resilient member housing cylinder;
The single-wafer processing apparatus according to claim 7, wherein an upper end portion is connected to the clamp member and a lower end portion is constituted by a shaft member engaged with the elastic member. 請求項１乃至４のいずれかに記載された処理装置に含まれる特徴的構成と、
請求項５または６に記載された処理装置に含まれる特徴的構成と、
請求項７または８に記載された処理装置に含まれる特徴的構成とを含む３つの特徴的構成の中から、選択された２以上の特徴的構成を含むことを特徴とする枚葉式の処理装置。 A characteristic configuration included in the processing device according to claim 1;
A characteristic configuration included in the processing device according to claim 5 or 6,
A single-wafer process comprising two or more characteristic configurations selected from the three characteristic configurations including the characteristic configuration included in the processing device according to claim 7 or 8. apparatus. 処理容器内の処理空間へ処理ガスを供給するガス供給手段を設け、前記処理容器内にリング状のアタッチメント部材を設け、該アタッチメント部材の内側周縁部により薄板円板状の載置台の外周端部を支持させ、前記載置台の下方にバックサイドガスを供給するバックサイドガス供給手段を設け、前記載置台上に被処理体を載置して前記載置台の下方に配置した加熱ランプにより前記被処理体を間接的に加熱して所定の処理を施すようにした枚葉式の処理装置において、
前記載置台の外周端部の側面に、該側面より載置台の内部に向かって温度測定穴を形成し、
前記アタッチメント部材側より前記温度測定穴に向けて温度測定用検出子を挿入し、
前記温度測定穴を形成した前記載置台の外周端部及び前記温度測定穴を臨む前記アタッチメント部材の内側周縁部の内の少なくともいずれか一方に、前記載置台の下方より上方の前記処理空間に向かうバックサイドガスの通りを促進させるガス流促進切り欠きを設けるように構成したことを特徴とする枚葉式の処理装置。 A gas supply means for supplying a processing gas to a processing space in the processing container is provided, a ring-shaped attachment member is provided in the processing container, and an outer peripheral end portion of the thin disk-shaped mounting table by an inner peripheral edge portion of the attachment member Backside gas supply means for supplying backside gas is provided below the mounting table, and the object to be processed is placed on the mounting table by a heating lamp placed on the mounting table and positioned below the mounting table. In a single-wafer processing apparatus in which a processing body is indirectly heated to perform a predetermined processing,
On the side surface of the outer peripheral end of the mounting table, a temperature measurement hole is formed from the side surface toward the inside of the mounting table,
Insert a temperature measurement detector from the attachment member side toward the temperature measurement hole,
At least one of the outer peripheral end portion of the mounting table in which the temperature measurement hole is formed and the inner peripheral edge portion of the attachment member facing the temperature measurement hole is directed to the processing space above the lower side of the mounting table. A single-wafer processing apparatus, characterized in that a gas flow promoting cutout for promoting the passage of backside gas is provided. 前記温度測定用検出子には、温度測定ユニットが接続されることを特徴とする請求項１０記載の枚葉式の処理装置。   The single-wafer processing apparatus according to claim 10, wherein a temperature measurement unit is connected to the temperature measurement detector. 前記温度測定用検出子は２本設けられており、一方の温度測定用検出子の先端部は前記載置台の略中央部に位置されると共に、他方の温度測定用検出子の先端部は前記載置台の略周辺部に位置されることを特徴とする請求項１０または１１記載の枚葉式の処理装置。   Two temperature measuring detectors are provided, and the tip of one temperature measuring detector is positioned at the substantially central portion of the mounting table, and the tip of the other temperature measuring detector is the front. The single-wafer processing apparatus according to claim 10 or 11, wherein the single-wafer processing apparatus is located in a substantially peripheral portion of the mounting table. 前記温度測定用検出子は光ファイバのロッドであることを特徴とする請求項１０乃至１２のいずれかに記載の枚葉式の処理装置。   The single-wafer processing apparatus according to claim 10, wherein the temperature measurement detector is an optical fiber rod. 前記温度測定用検出子は熱電対であることを特徴とする請求項１０乃至１２のいずれかに記載の枚葉式の処理装置。   The single-wafer processing apparatus according to claim 10, wherein the temperature measuring detector is a thermocouple.
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