JP2009238953A - Semiconductor element with end surface protecting structure, method of mounting the same, and method of manufacturing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor element which is mounted in high yield without having an end surface damaged even when mounted by multi-chip mounting technique. <P>SOLUTION: The semiconductor element 15 has an end surface protective thin film 1 formed in such a manner that it protrudes from an end surface 7, and is mounted in such a manner that the end surface protective film 1 is held between the end surface and the opposite surface of an opposite-side element to be made to abut. The end surface protective thin film 1 serves as a cushion during the mounting, so the end surface 7 (especially, a peripheral region of a core layer 17) of the semiconductor element 15 is not mechanically damaged to avoid the deterioration of the semiconductor element 15. The end surface protective thin film 1 is located at a position where light made incident and projected from the end surface 7 of the semiconductor element 15 is not blocked and it is made sufficiently thin, for example, about 0.5 μm thick, so that efficiency of optical coupling between the semiconductor element 15 and opposite-side element is held high. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a semiconductor device having a structure for protecting an end face, and more particularly to a semiconductor element with an end face protection structure that is preferably used in a multichip mounting technique, and a mounting method and a manufacturing method for the semiconductor element.

  In recent years, as one of optical integrated circuit manufacturing techniques used in optical communication and the like, a plurality of optical semiconductor elements are mounted on a common mounting substrate and optically coupled in such a manner that the end faces of adjacent optical semiconductor elements are brought into contact with each other. Attention has been focused on multi-chip mounting technology for optical semiconductor elements.

  FIG. 13 shows an example of an optical integrated circuit mounted by a conventional multichip mounting technique. FIG. 13A is a plan view thereof, and FIG. 13B is a cross-sectional view taken along a broken line A-A ′ in FIG.

As shown in FIG. 13, the first optical semiconductor element 101 and the second optical semiconductor element 102 are fixed and mounted on a common mounting substrate 110 by a fusing material 109. In such a manner that the end portions of the respective core layers 106 and 107 are butted and optically coupled. On the mounting substrate 110, pad electrodes 103 and 104 are provided on both sides of both optical semiconductor elements 101 and 102, respectively. Both optical semiconductor elements 101 and 102 are electrically connected to the pad electrode 104 by bonding wires 105, respectively. The optical semiconductor element 102 is further optically coupled to an optical circuit 112 having a core layer 108 of quartz waveguide (only the introduction portion of the optical circuit is shown in FIG. 13), and an optical integrated circuit is formed as a whole. is doing.
As another related technique of the present invention, there is a semiconductor laser element disclosed in Japanese Patent No. 3003592, in which a protective film is formed on a light emitting surface.
Japanese Patent No. 3003592

  However, there are problems with the above-described conventional multichip mounting technology. In the manufacturing process of the optical integrated circuit shown in FIG. 13, when the end face of the first optical semiconductor element 101 is abutted against the end face of the second optical semiconductor element 102 opposed to the end face, particularly the core layer 106, There is a high possibility that the end face abutting portion 111 around 107 is mechanically damaged and the optical semiconductor elements 101 and 102 are deteriorated.

  An object of the present invention has been made in consideration of the above-mentioned problems of the prior art, and a semiconductor element that can be mounted with a high yield without causing damage to the end face even when mounted by a multichip mounting technique, and a mounting method thereof And providing a manufacturing method.

  Other objects of the present invention which are not specified here will be apparent from the following description and the accompanying drawings.

(1) A semiconductor element according to the first aspect of the present invention is:
A semiconductor element used with an end face close to an adjacent component,
Having an end face protective thin film formed so as to protrude from the end face;
The end face protective thin film is mounted so as to be sandwiched between the end face and the facing surface of the adjacent component.

  In the semiconductor element according to the first aspect of the present invention, as described above, the end face protective thin film is formed so as to protrude from the end face. When the semiconductor element is mounted, the end face protective thin film is connected to the end face of the semiconductor element. Since it is sandwiched between the opposing surfaces of the adjacent parts, a gap is formed between the end surface and the opposing surface, and the end surface and the opposing surface do not contact each other. Therefore, even when the semiconductor element is mounted by the multichip mounting technique, the end face of the semiconductor element (for example, the end face near the core layer) is not deteriorated due to contact damage, and is mounted with a high yield. Can do.

  (2) In a preferred example of the semiconductor element according to the first aspect of the present invention, the semiconductor element has a structure in which light is emitted from the end face or light is incident on the end face.

  (3) In another preferred example of the semiconductor element according to the first aspect of the present invention, the adjacent component has a structure in which light is emitted from the facing surface or light is incident on the facing surface, and the semiconductor The semiconductor element and the adjacent component can be optically coupled when the element is mounted.

  (4) In still another preferred example of the semiconductor element according to the first aspect of the present invention, the adjacent component is a semiconductor element.

  (5) In still another preferred example of the semiconductor element according to the first aspect of the present invention, the semiconductor element further includes a mounting board, and the semiconductor element and the adjacent component are mounted on the mounting board.

  (6) In still another preferred example of the semiconductor element according to the first aspect of the present invention, the end face is formed by cleavage.

  (7) In still another preferred example of the semiconductor element according to the first aspect of the present invention, the end face protective thin film is separated from the surface of the semiconductor element in the vicinity of the cleavage position of the end face.

  (8) In still another preferred example of the semiconductor element according to the first aspect of the present invention, a cleavage guide groove is provided along the cleavage line of the end face.

  (9) In still another preferred example of the semiconductor element according to the first aspect of the present invention, the end face protective thin film is formed of an Au film.

(10) A semiconductor element mounting method according to a second aspect of the present invention includes:
A method for mounting a semiconductor device according to a first aspect of the present invention, comprising:
Bending the end face protective thin film toward the end face;
Including fixing the semiconductor element close to the adjacent component by sandwiching the bent end face protective thin film between the end surface of the semiconductor element and the facing surface of the adjacent component;
The end surface of the semiconductor element is fixed close to the facing surface of the adjacent component.

  Since the semiconductor element mounting method according to the second aspect of the present invention includes the steps described above, it is apparent that the semiconductor element according to the first aspect of the present invention can be mounted.

  (11) In a preferred example of the semiconductor element mounting method according to the second aspect of the present invention, the step of bending the thin film is performed by bringing the end face protective thin film into contact with the adjacent component.

  (12) In another preferable example of the semiconductor element mounting method according to the second aspect of the present invention, the step of bending the thin film is performed by bringing the end face protective thin film into contact with a bending jig other than the adjacent component. The

  (13) In still another preferred example of the method for mounting a semiconductor element according to the second aspect of the present invention, the bending jig is continuous with the curved surface portion that is convexly curved and parallel to the end surface. And the step of bending the thin film comprises bringing the end face protective thin film into contact with the curved surface portion and then moving the semiconductor element parallel to the end face to This is done by contacting the flat part.

  (14) In still another preferred example of the semiconductor element mounting method according to the second aspect of the present invention, the mounting board has a height reference plane, and the semiconductor element is mounted on the mounting board. In the positioning in the height direction, the surface of the semiconductor element is pressed against the height reference plane, or the element-side height reference plane formed on the surface of the semiconductor element is pressed against the height reference plane. Is made by

  (15) In still another preferred example of the semiconductor element mounting method according to the second aspect of the present invention, the semiconductor element has an element-side alignment marker, and the mounting substrate has a substrate-side alignment marker, Positioning in the lateral direction when mounting the semiconductor element on the mounting substrate is performed by monitoring the relative positional relationship between the element-side alignment marker and the substrate-side alignment marker.

(16) A method for manufacturing a semiconductor device according to a third aspect of the present invention includes:
A method for manufacturing a semiconductor device according to a first aspect of the present invention, comprising:
Forming a first resist film on a first surface of the semiconductor element body on which the end face protective thin film is formed;
Selectively removing a part of the first resist film to form a window in the first resist film;
Forming a first thin film for the end face protective thin film on the first resist film so as to cover the window, and bringing the first thin film into contact with the first surface through the window;
Selectively forming a second resist film in a predetermined region including the window on the first thin film;
Selectively removing a portion of the first thin film exposed from the second resist film;
Removing the first resist film and the second resist film,
The end face protective thin film fixed to the first surface is formed by the remaining portion of the first thin film.

  Since the semiconductor device manufacturing method according to the third aspect of the present invention includes the steps described above, it is apparent that the semiconductor element according to the first aspect of the present invention can be manufactured.

  According to the semiconductor element of the first aspect of the present invention, the end face is not damaged even when mounted by the multichip mounting technique, and mounting can be performed with a high yield.

  According to the method for mounting a semiconductor element according to the second aspect of the present invention, the semiconductor element according to the first aspect of the present invention can be mounted on a mounting substrate or the like.

  According to the method for manufacturing a semiconductor element according to the third aspect of the present invention, the semiconductor element according to the first aspect of the present invention can be manufactured.

  DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, preferred embodiments of the invention will be described with reference to the accompanying drawings.

(Configuration of Semiconductor Element of First Embodiment)
First, the configuration of the semiconductor device according to the first embodiment of the present invention will be described with reference to FIG.

  1A is a plan view showing the configuration of the semiconductor device according to the first embodiment, FIG. 1B is a cross-sectional view taken along a broken line AA ′ in FIG. 1A, and FIG. ) Is a cross-sectional view taken along a broken line BB ′ in FIG. 1A, and FIG. 1D is a cross-sectional view taken along a broken line CC ′ in FIG.

  The semiconductor element 15 of the first embodiment is an optical semiconductor element that enters and exits light from one end face 7 and the other end face 8, and as shown in FIGS. On the surface side, a pair of upper and lower clad layers 22 and a core layer 17 for guiding light sandwiched between the clad layers 22 are provided. The pair of clad layers 22 and the core layer 17 constitutes a double hetero structure. The core layer 17 is continuously provided in a rib shape from one end to the other end on the surface side of the semiconductor substrate 4. Both sides of the core layer 17 are embedded with a buried layer 23, and the surface of the upper cladding layer 22 and the surface of the buried layer 23 form a plane. The plane is covered with an insulating film 21. A p-electrode 2 is formed above the core layer 17 at a position facing the upper clad layer 22. A back electrode 5 is provided on the back side of the semiconductor substrate 4.

  Two rectangular band-shaped end face protective thin films 1 are formed on the insulating film 21. These end face protective thin films 1 are respectively arranged on both sides of the p-electrode 2, and protrude from the end face 7 in a lateral direction along the semiconductor substrate 4 (extrude). In the first embodiment, the end face protective thin film 1 is formed of an Au film having a thickness of 0.5 μm.

  A feature of the structure of the semiconductor element 15 is that the end face protective thin film 1 is formed so as to protrude laterally from the end face 7, and the other structures are general.

(Method for Mounting Semiconductor Device of First Embodiment)
Next, a method of mounting the semiconductor element 15 shown in FIG. 1 on an optical integrated circuit will be described with reference to FIGS.

  The state of the optical integrated circuit before the semiconductor element 15 is mounted is as shown in FIG. As shown in FIG. 2, an adjacent semiconductor 10 is mounted adjacent to the mounting region 9 of the semiconductor element 15 on the mounting substrate of this optical integrated circuit. An optical circuit 11 is formed adjacent to the adjacent semiconductor 10 on the side opposite to the mounting region 9 of the adjacent semiconductor 10. Inside the mounting region 9, a fusion material 13 for connecting and fixing the semiconductor element 15 is formed. The position and size of the fusing material 13 are set so as to match those of the p-electrode 2 formed on the surface of the semiconductor element 15. Pad electrodes 12 and 14 are formed on both sides of the mounting region 9.

  First, as shown in FIG. 3A, the surface of the semiconductor element 15 (the surface on which the end face protective thin film 1 is formed) is directed toward the mounting substrate 16, that is, turned over, and brought closer to the mounting substrate 16.

  Next, as shown in FIG. 3B, the pair of end face protective thin films 1 are pressed against the opposing surface (the left surface in FIG. 3) of the adjacent semiconductor element 10 mounted on the mounting substrate 16, and then pressed. The end face protective thin film 1 is bent in the direction of the end face 7.

  Next, as shown in FIG. 3C, the semiconductor element 15 having a pair of end face protective thin films 1 bent along the end face 7 is mounted on the mounting region 9 so that the p electrode 2 overlaps the fusion material 13. To place. At this time, the semiconductor element 15 is adjacent to the adjacent semiconductor element 10, and the pair of end face protective thin films 1 are sandwiched between the end face 7 of the semiconductor element 15 and the opposing surface of the adjacent semiconductor element 10. Thereafter, the p-electrode 2 is fixed to the mounting substrate 16 by heating and cooling the fusing material 13 to re-solidify it. The semiconductor element 15 is thus mounted in the mounting area 9.

  As shown in FIG. 4, the pair of end face protective thin films 1 are disposed on both sides of the core layer 17 (p electrode 2) and do not overlap with the core layer 17. The end face protective thin film 1 does not exist between the layer 17 and the core layer 18 of the adjacent semiconductor element 10. Therefore, the light is not blocked by the end face protective thin film 1, and the semiconductor element 15 and the adjacent semiconductor element 10 are mounted in an optically coupled state. In FIG. 4, reference numeral 19 denotes a core layer of the quartz waveguide of the optical circuit 11, which is optically connected to the core layer 18 of the adjacent semiconductor element 10.

  As shown in FIG. 3C and FIG. 4A, since the end face protective thin film 1 is sandwiched between the semiconductor element 15 and the adjacent semiconductor element 10, as shown in FIG. There is a gap 20 between the end face 7 of 15 and the opposing face of the adjacent semiconductor element 10. Therefore, unlike the conventional example shown in FIG. 13, when the semiconductor element 15 is mounted, the end face 7 of the semiconductor element 15, in particular, the end face abutting portion around the core layer 17 is not deteriorated by contact damage, and the yield is high. The semiconductor element 15 can be mounted.

  In the first embodiment, since the thickness of the end face protective thin film 1 is 0.5 μm, the width of the gap 20 shown in FIG. 4B is also sufficiently narrow as 0.5 μm. Therefore, the optical coupling between the core layer 17 of the semiconductor element 15 and the core layer 18 of the adjacent semiconductor element 10 is kept sufficiently high regardless of the presence of the end face protective thin film 1. However, the film thickness of 0.5 μm is merely an example, and the effect of the present invention is not lost even if the film thickness is other than this.

  In the first embodiment, the end face protective thin film 1 is formed of an Au film. Due to the characteristics of Au, the end face protective thin film 1 is not easily broken when it is bent in the direction of the end face 7 in the process of FIG. 3B, and once the end face protective thin film 1 is bent by applying a force, the force is removed. However, since the bent portion is easy to maintain its shape, the mounting process of the semiconductor element 15 is facilitated. Further, since Au has rollability, it is excellent as a material that absorbs the impact of the end face abutting portions of the semiconductor element 15 and the adjacent semiconductor element 10 in the process of FIG. However, the use of the Au film as the end face protective thin film 1 is merely an example, and the use of other materials does not lose the effect of the present invention.

(Method for Manufacturing Semiconductor Device of First Embodiment)
Next, a method for manufacturing the semiconductor element 15 according to the first embodiment of the present invention will be described with reference to FIGS.

  As described above, the semiconductor element 15 according to the first embodiment is characterized in that the pair of end face protective thin films 1 are formed so as to protrude from the end face 7 of the semiconductor element 15 as shown in FIG. FIG. 5 shows the structure of a semiconductor element 15 (hereinafter, this configuration is referred to as “main body” or “element main body” of the semiconductor element 15) before forming the end face protective thin film 1. This is a structure of a general optical semiconductor device in which the layer 17, the cladding layer 22, the p-electrode 2, etc. are formed, and the manufacturing method up to this stage is a general one, and is directly related to the features of the present invention. Since there is no detailed description about them, a detailed description thereof will be omitted.

  For the element body shown in FIG. 5, first, as shown in FIG. 6, a resist film 25 is formed on the surface of the element body (the surface of the insulating film 21), and the resist film 25 is formed by a normal photolithography process. By selective removal, two windows 24 are formed. The position of the window 24 is a position where the pair of end face protective thin films 1 are in contact with and fixed to the surface of the element body (the surface of the insulating film 21).

  Next, as shown in FIG. 7, after an Au film 26 is formed on the entire surface of the element body by vapor deposition or sputtering, a resist film 27 is selectively formed in a region including the window 24 on the Au film 26. Form. The shape and size of the region including the window portion 24 are matched with those of the pair of end face protective thin films 1.

  Next, when the Au film 26 in a portion other than the region where the resist film 27 is formed is removed by etching, the Au film 26 remains only in the region where the resist film 27 is formed. Therefore, when both the resist films 25 and 27 are removed, the pair of end face protective thin films 1 are formed on the surface of the element body (the surface of the insulating film 21). Thereafter, when the back surface electrode 28 is formed on the back surface of the semiconductor substrate 4 after polishing, the state shown in FIG. 8 is obtained. At this time, as a result of removing the resist film 25 between the end face protective thin film 1 and the insulating film 21, a gap 6 is formed between the end face protective thin film 1 and the insulating film 21.

  Next, as shown in FIG. 9A, the element body (the pair of end face protective thin films 1 are formed) so that the corners of the cleavage jig 29 come to the lower part of the region where the gap 6 is formed. A force is applied to the portion other than the end face protective thin film 1 in the direction of the arrow shown in FIG. 9A to cleave the element body. As a result, the state shown in FIG. Here, by cleaving in the lower part of the region where the gap 6 is formed, the end face protective thin film 1 can be formed so as to protrude from the end face 7 as shown in FIG. 9B.

  Thereafter, when an AR (Anti Reflection) film 3 is formed on each of the end faces 7 and 8 on both sides of the element body, the semiconductor element 15 of the first embodiment shown in FIG. 1 is completed.

  As described above, in the semiconductor element 15 of the first embodiment, the pair of end face protective thin films 1 are formed so as to protrude from the end face 7. When the semiconductor element 15 is mounted, the end face protective thin film 1 is 15 is sandwiched between the end surface 7 and the facing surface of the adjacent component 1, the gap 20 is formed between the end surface 7 and the facing surface, and the end surface 7 and the facing surface do not come into contact with each other. Therefore, even when the semiconductor element 15 is mounted on the mounting substrate 16 by the multichip mounting technique, the end face 7 of the semiconductor element 15 (particularly the end face near the core layer 17) is not deteriorated due to contact damage. It can be mounted with high yield.

  Further, since the end face 7 is formed by cleavage, the end face protective thin film 1 can be easily left out of the end face 7.

  Further, since the end face protective thin film 1 is formed of an Au film, it is difficult to bend when bent in the direction of the end face 7, and once bent by applying a force, the bent portion is shaped even if the force is removed. Easy to keep. Therefore, the mounting process of the semiconductor element 15 is easy. Further, since Au has rollability, it is excellent as a material that absorbs an impact applied to the end surface 7 of the semiconductor element 15 and the facing surface of the adjacent semiconductor element 10 in the step of FIG.

  In the first embodiment, after the Au film 26 is formed by vapor deposition or sputtering, the end face protective thin film 1 is formed by etching. However, the present invention is not limited to this. The end face protective thin film 1 may be formed by a so-called selective Au plating process in which an Au film is plated and grown only on a necessary portion using a resist pattern. In that case, the same effect as the first embodiment can be obtained.

  Moreover, although Au film | membrane is used as the end surface protective thin film 1, this invention is not limited to this, You may use another material, for example, a polyimide film | membrane.

  Moreover, as shown in FIG. 9, although it cleaved using the corner | angular part of the cleavage jig | tool 29, this invention is not limited to this. Even when a jig or apparatus of another form is used, cleavage can be performed by applying a force in the direction of opening in the upper surface direction along the cleavage line.

(Second Embodiment)
Next, a second embodiment of the present invention will be described with reference to FIG. FIG. 10 corresponds to FIG. 3 in the first embodiment.

  The second embodiment is different from the first embodiment in that, in the first embodiment, the step of bending the end face protective thin film 1 of the semiconductor element 15 in the direction of the end face 7 is performed as shown in FIG. Whereas the thin film 1 is performed by contacting and pressing the opposing surface of the adjacent semiconductor element 10, in the second embodiment, as shown in FIGS. 10A and 10B, the end face of the semiconductor element 15 is provided. The protective thin film 1 is bent by contacting and pressing the end face protective thin film 1 against the bending jig 30, and the element body in a state where the end face protective thin film 1 is bent in advance as shown in FIG. The difference is that it is mounted close to the adjacent semiconductor element 10.

  Other configurations, operations, and manufacturing methods of the second embodiment are the same as those of the first embodiment.

  In the second embodiment, as described above, the bending process of the end face protective thin film 1 is performed by contacting / pressing the bending jig 30, so the bending jig 30 is designed in a shape suitable for the bending process. As a result, there is an effect that the bending process can be carried out more efficiently and reliably as compared with the first embodiment.

  More specifically, as shown in FIG. 10, the bending jig 30 has a curved surface portion 31 that is curved in a convex shape, and a flat surface portion 32 that is continuous with the curved surface portion 31 and is parallel to the end surface 7. In the step of bending the end face protective thin film 1, after the end face protective thin film 1 is brought into contact with the curved surface portion 31, the semiconductor element 15 is moved in parallel with the end face 7 and the end face protective thin film 1 is brought into contact with the flat portion 32. Is made by Therefore, the bending process of the end face protective thin film 1 can be performed only by a simple operation of moving the semiconductor element 15 vertically downward.

In addition, it goes without saying that the effects obtained in the first embodiment can also be obtained in the second embodiment.
(Third embodiment)
Next, a third embodiment of the present invention will be described with reference to FIG. FIG. 11 corresponds to FIG. 9 in the first embodiment.

  The third embodiment is different from the first embodiment in that the semiconductor element 15 in the third embodiment has a cleavage guide groove 33 as shown in FIG. The cleavage guide groove 33 is formed by wet etching before the end face protective thin film 1 is formed. The direction of the cleavage guide groove 33 is appropriately selected along the cleavage line of the end face 7 with respect to the crystal axis of the semiconductor substrate 4, and etching is performed using an anisotropic etchant. In this way, a V-shaped groove as shown in FIG. 11A can be easily formed.

  As shown in FIG. 11A, the element main body (a pair of end face protective thin films 1 is formed) is set so that the corner of the cleavage jig 29 comes to the lower part of the cleavage guide groove 33, and the end face protective thin film is formed. A force other than 1 is applied in the direction of the arrow shown in FIG. 11A to cleave the element body. As a result, the state shown in FIG. Thus, the end face protective thin film 1 can be formed so as to protrude from the end face 7.

  Other configurations, operations, and manufacturing methods of the third embodiment are the same as those of the first embodiment.

  In the third embodiment, as described above, since the bending process of the end face protective thin film 1 is performed by contacting and pressing the cleavage jig 29 using the cleavage guide groove 33, the comparison with the second embodiment is performed. Thus, there is an effect that the bending process can be performed more efficiently and reliably.

In addition, it goes without saying that the effects obtained in the first embodiment can also be obtained in the second embodiment.
(Fourth embodiment)
Next, a fourth embodiment of the present invention will be described with reference to FIG.

  FIG. 12 is a plan view showing an optical integrated circuit in a state before the semiconductor element 15 is mounted in the fourth embodiment, and corresponds to FIG. 2 in the first embodiment.

  The fourth embodiment is different from the first embodiment in that, in the fourth embodiment, as shown in FIG. The substrate side alignment marker 35 for direction positioning is formed, and although not shown, the element side alignment marker is formed on the surface of the semiconductor element 15 (the surface of the insulating film 21). The back electrode 28 is selectively removed in a region immediately below that position (just above when mounted).

  Other configurations, operations, and manufacturing methods of the fourth embodiment are the same as those of the first embodiment.

  In the fourth embodiment, as shown in FIG. 12, a pedestal 34 is formed at a portion where the semiconductor element 15 is mounted, and the surface of the semiconductor element 15 is pressed against the pedestal 34 when the semiconductor element 15 is mounted. Can be positioned in the height direction. Further, when the semiconductor element 15 is mounted, the substrate-side alignment marker 35 and the element-side alignment marker are seen through with an infrared camera, and the relative positional relationship is monitored, thereby positioning the semiconductor element 15 in the lateral direction (horizontal plane). It can be carried out.

  As described above, in the semiconductor element 15 of the fourth embodiment, it is possible to obtain the effect that the semiconductor element 15 can be positioned in the height direction and in the horizontal direction (in a horizontal plane) at the time of mounting. In addition, it goes without saying that the effects obtained in the first embodiment can also be obtained in the fourth embodiment.

(Other embodiments)
The first to fourth embodiments described above show preferred examples of the present invention. Therefore, it goes without saying that the present invention is not limited to these embodiments, and various modifications are possible.

  For example, the semiconductor element 15 shown in the above embodiment is an example of an optical semiconductor element that inputs and outputs light from the end face 7, but the present invention is not limited to this. The present invention can also be applied to any semiconductor element that needs to protect the end face 7 from mechanical damage.

  Moreover, although the said embodiment is an example mounted so that the end surface 7 of the semiconductor element 15 in which the end surface protective thin film 1 was formed was made to adjoin to the opposing surface of the adjacent semiconductor element 10, this invention is not limited to this. As the partner to which the end face 7 is brought close, any element can be used as long as the facing face can be damaged by being brought close.

  The present invention is applicable to various optical integrated circuits used for optical communications and other purposes.

(A) is a top view which shows the structure of the semiconductor element which concerns on 1st Embodiment of this invention, (b) is sectional drawing along broken line AA 'in (a), (c) is in (a) FIG. 6D is a cross-sectional view taken along the broken line BB ′ in FIG. It is a top view which shows the state of the optical integrated circuit before mounting the semiconductor element which concerns on 1st Embodiment of this invention. FIG. 3 is a cross-sectional view taken along a broken line B-B ′ in FIG. 2, showing a method for mounting a semiconductor element according to the first embodiment of the present invention. (A) is a top view which shows the state of the optical integrated circuit after mounting the semiconductor element based on 1st Embodiment of this invention, (b) is sectional drawing along the broken line AA 'in (a). is there. (A) is a top view which shows the manufacturing method of the semiconductor element which concerns on 1st Embodiment of this invention, (b) is sectional drawing along broken line AA 'in (a), (c) is (a). It is sectional drawing along the broken line BB 'in the inside. (A) is a top view which shows the manufacturing method of the semiconductor element which concerns on 1st Embodiment of this invention, (b) is sectional drawing along broken line AA 'in (a), (c) is (a). FIG. 6 is a cross-sectional view taken along the broken line BB ′ in FIG. (A) is a top view which shows the manufacturing method of the semiconductor element which concerns on 1st Embodiment of this invention, (b) is sectional drawing along broken line AA 'in (a), (c) is (a). FIG. 6 is a cross-sectional view taken along a broken line BB ′ in FIG. (A) is a top view which shows the manufacturing method of the semiconductor element which concerns on 1st Embodiment of this invention, (b) is sectional drawing along broken line AA 'in (a), (c) is (a). 7 is a cross-sectional view taken along a broken line BB ′ in FIG. (A) And (b) is sectional drawing along the broken line B-B 'in Fig.8 (a) which shows the manufacturing method of the semiconductor element based on 1st Embodiment of this invention, and is a continuation of FIG. It is a figure similar to FIG. 3 which shows the mounting method of the semiconductor element which concerns on 2nd Embodiment of this invention. It is a figure similar to FIG. 9 which shows the manufacturing method of the semiconductor element which concerns on 3rd Embodiment of this invention. (A) is the same figure as FIG. 2 which shows the mounting method of the semiconductor element which concerns on 4th Embodiment of this invention, (b) is sectional drawing along the broken line A-A 'in (a). (A) is a top view which shows an example of the optical integrated circuit mounted by the conventional multichip mounting technique, (b) is sectional drawing along the broken line A-A 'in (a).

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 End surface protective thin film 2 P electrode 3 AR film 4 Semiconductor substrate 5 Back surface electrode 6 Air gap 7 End surface 8 End surface 9 Semiconductor element mounting area 10 Adjacent semiconductor element 11 Optical circuit (introduction part)
12 Pad Electrode 13 Adhesive Material 14 Pad Electrode 15 Semiconductor Element 16 Mounting Substrate 17 Semiconductor Element Core Layer 18 Semiconductor Element Core Layer 19 Quartz Waveguide Core Layer 20 Void 21 Insulating Film 22 Clad Layer 23 Buried Layer 24 Window 25 Resist Film 26 Au film 27 Resist film 28 Back surface electrode 29 Cleaving jig 30 Bending jig 31 Curved curved surface part 32 Curved surface part 32 parallel to the end surface Cleaving guide groove 34 Base 35 Alignment marker 101 First optical semiconductor element 102 Second optical semiconductor element 103 Pad electrode 104 Pad electrode 105 Bonding wire 106 Core layer 107 of the first semiconductor element Core layer 108 of the second semiconductor element Core layer 109 of the quartz waveguide Fusion material 110 Mounting substrate 111 End face around the core layer Butting part 112 Optical circuit (introduction part)

Claims (16)

A semiconductor element used with an end face close to an adjacent component,
Having an end face protective thin film formed so as to protrude from the end face;
The semiconductor element according to claim 1, wherein the end face protective thin film is mounted so as to be sandwiched between the end face and the facing surface of the adjacent component.   The semiconductor element according to claim 1, wherein the semiconductor element has a structure in which light is emitted from the end face or light is incident on the end face.   The adjacent component has a structure in which light is emitted from the facing surface or light is incident on the facing surface, and the semiconductor element and the adjacent component can be optically coupled when the semiconductor element is mounted. The semiconductor element according to claim 1 or 2.   The semiconductor element according to claim 1, wherein the adjacent component is a semiconductor element.   The semiconductor element according to claim 1, further comprising a mounting board, wherein the semiconductor element and the adjacent component are mounted on the mounting board.   The semiconductor element according to claim 1, wherein the end face is formed by cleavage.   The semiconductor element according to claim 6, wherein the end face protective thin film is separated from the surface of the semiconductor element in the vicinity of the cleavage position of the end face.   The semiconductor element according to claim 6, wherein a cleavage guide groove is provided along a cleavage line of the end face.   The semiconductor element according to claim 1, wherein the end face protective thin film is formed of an Au film. A method for mounting a semiconductor device according to any one of claims 1 to 9,
Bending the end face protective thin film toward the end face;
Including fixing the semiconductor element close to the adjacent component by sandwiching the bent end face protective thin film between the end surface of the semiconductor element and the facing surface of the adjacent component;
The semiconductor element mounting method, wherein the end face of the semiconductor element is fixed in proximity to the facing surface of the adjacent component.   The method of mounting a semiconductor element according to claim 10, wherein the step of bending the thin film is performed by bringing the end face protective thin film into contact with the adjacent component.   The semiconductor element mounting method according to claim 10, wherein the step of bending the thin film is performed by bringing the end face protective thin film into contact with a bending jig other than the adjacent component. The bending jig has a curved surface portion that is curved in a convex shape, and a flat surface portion that is continuous with the curved surface portion and parallel to the end surface;
The step of bending the thin film is performed by bringing the end face protective thin film into contact with the curved surface portion and then moving the semiconductor element parallel to the end face to bring the end face protective thin film into contact with the flat portion. Item 13. A semiconductor device mounting method according to Item 12. The mounting board has a height reference plane,
Positioning in the height direction when mounting the semiconductor element on the mounting substrate is performed by pressing the surface of the semiconductor element against the height reference plane, or the element side formed on the surface of the semiconductor element The method for mounting a semiconductor element according to claim 10, wherein the method is performed by pressing a height reference surface against the height reference surface. The semiconductor element has an element side alignment marker, and the mounting substrate has a substrate side alignment marker,
15. The positioning in the lateral direction when mounting the semiconductor element on the mounting substrate is performed by monitoring a relative positional relationship between the element-side alignment marker and the substrate-side alignment marker. 2. A method for mounting a semiconductor element according to item 1. A method for manufacturing a semiconductor element according to any one of claims 1 to 9,
Forming a first resist film on a first surface of the semiconductor element body on which the end face protective thin film is formed;
Selectively removing a part of the first resist film to form a window in the first resist film;
Forming a first thin film for the end face protective thin film on the first resist film so as to cover the window, and bringing the first thin film into contact with the first surface through the window;
Selectively forming a second resist film in a predetermined region including the window on the first thin film;
Selectively removing a portion of the first thin film exposed from the second resist film;
Removing the first resist film and the second resist film,
The method of manufacturing a semiconductor device, wherein the end face protective thin film fixed to the first surface is formed by a remaining portion of the first thin film.

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