JP2009225118A - Surface acoustic wave device - Google Patents

Surface acoustic wave device Download PDF

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JP2009225118A
JP2009225118A JP2008067515A JP2008067515A JP2009225118A JP 2009225118 A JP2009225118 A JP 2009225118A JP 2008067515 A JP2008067515 A JP 2008067515A JP 2008067515 A JP2008067515 A JP 2008067515A JP 2009225118 A JP2009225118 A JP 2009225118A
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electrode
wall
acoustic wave
surface acoustic
wave device
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JP5104432B2 (en
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Atsushi Takano
敦 鷹野
Tomohisa Tazaki
朝尚 田崎
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Panasonic Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To improve reliability in a surface-mounting type surface acoustic wave device which is mainly used in a mobile communication device. <P>SOLUTION: A resin cover 8 covering a comb electrode 2 provided on a piezoelectric substrate 1 comprises: an inner wall 9 surrounding a side of an excitation area 4; a conductor board 10 covering an opening of the inner wall 9; and an outer wall 11 covering the conductor board 10 and the inner wall 9. An auxiliary electrode 12 is provided on a surface opposed to the excitation area 4 of the comb electrode 2 in the outer wall 11, and the auxiliary electrode 12 and the conductor board 10 are connected with a columnar electrode 13. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は、主として移動体通信機器にて使用される表面実装型の弾性表面波デバイスに関するものである。   The present invention relates to a surface-mount type surface acoustic wave device mainly used in mobile communication equipment.

従来の弾性表面波デバイスは図4に示されるように、圧電基板1に設けられた櫛形電極2を樹脂カバー3で覆い励振空間4を封止するとともに、樹脂カバー3の表面に外部電極5を設け、樹脂カバー3を貫通する柱状電極6を用いて外部電極5と櫛形電極2に接続されたパッド電極7とを接続した構造が知られている。   As shown in FIG. 4, the conventional surface acoustic wave device covers the comb-shaped electrode 2 provided on the piezoelectric substrate 1 with a resin cover 3 to seal the excitation space 4, and an external electrode 5 on the surface of the resin cover 3. A structure in which the external electrode 5 and the pad electrode 7 connected to the comb electrode 2 are connected using a columnar electrode 6 provided and penetrating the resin cover 3 is known.

なお、この出願の発明に関する先行技術文献情報としては、例えば、特許文献1が知られている。
特開2007−214169号公報
As prior art document information relating to the invention of this application, for example, Patent Document 1 is known.
JP 2007-214169 A

近年、このような弾性表面波デバイスの使途としてマザー基板上で他のデバイスとともにトランスファーモールドし一体化するモジュール部品が検討されるようになり、弾性表面波デバイスをトランスファーモールド時に加わるモールド圧力に耐える構造としなければならない。   In recent years, module parts that transfer mold and integrate together with other devices on the mother substrate have been studied as a way to use such surface acoustic wave devices, and a structure that can withstand the molding pressure applied to surface acoustic wave devices during transfer molding. And shall be.

しかしながら、上述した弾性表面波デバイスの構造においては、励振空間4を保護する樹脂カバー3が樹脂により構成されているため、励振空間4を形成する上で構造強度が低くなってしまう天井部分がモールド圧力により破線で示すように櫛形電極2側に撓み、この撓みにより樹脂カバー3と櫛形電極2が接触してしまうと弾性表面波デバイスの周波数特性が劣化してしまうという問題があり、励振空間4を覆う樹脂カバー3の構造強度を確保し、弾性表面波デバイスとしてより高い耐モールド性を確保する必要があった。   However, in the structure of the surface acoustic wave device described above, since the resin cover 3 that protects the excitation space 4 is made of resin, the ceiling portion where the structural strength becomes low when the excitation space 4 is formed is a mold. As indicated by the broken line due to the pressure, if the resin cover 3 and the comb electrode 2 come into contact with each other due to the bending, there is a problem that the frequency characteristics of the surface acoustic wave device deteriorate, and the excitation space 4 It was necessary to ensure the structural strength of the resin cover 3 covering the substrate and to ensure higher mold resistance as a surface acoustic wave device.

そこで、本発明はこのような問題を解決し、弾性表面波デバイスの耐モールド性を向上させることを目的とするものである。   Therefore, the present invention aims to solve such problems and improve the mold resistance of the surface acoustic wave device.

上記目的を達成するために本発明は、圧電基板上に設けられた櫛形電極を覆う樹脂カバーを、励振空間の側方を囲む内側壁と、この内側壁の開口を覆う導体板と、この導体板及び内側壁を覆う外側壁により構成し、外側壁における櫛形電極の励振空間と対向する表面に補助電極を設けるとともに、補助電極と導体板を柱状電極で接続した構成としたのである。   In order to achieve the above object, the present invention provides a resin cover that covers a comb-shaped electrode provided on a piezoelectric substrate, an inner wall that surrounds the side of the excitation space, a conductor plate that covers the opening of the inner wall, and this conductor It is configured by an outer wall that covers the plate and the inner wall, an auxiliary electrode is provided on the surface of the outer wall facing the excitation space of the comb electrode, and the auxiliary electrode and the conductor plate are connected by a columnar electrode.

本発明によれば、弾性表面波デバイスの耐モールド性を向上させることが出来るのである。   According to the present invention, the mold resistance of a surface acoustic wave device can be improved.

以下、本発明の一実施形態について図を用いて説明する。なお、上述した従来の弾性表面波デバイスと同様の構成については同じ符号を付して説明する。   Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In addition, the same code | symbol is attached | subjected and demonstrated about the structure similar to the conventional surface acoustic wave device mentioned above.

図1は本発明の一実施の形態における弾性表面波デバイスを示したものであり、その基本的な構造は、櫛形電極2およびこの櫛形電極2に接続されたパッド電極7が適宜配置された圧電基板1の主面において櫛形電極2の励振空間4を形成するため樹脂カバー8が設けられた構造となっている。また、樹脂カバー8の表面には外部接続用の端子となる外部電極5が設けられ、この外部電極5は樹脂カバー8を貫通する柱状電極6によりパッド電極7に接続されている。   FIG. 1 shows a surface acoustic wave device according to an embodiment of the present invention. The basic structure thereof is a piezoelectric device in which a comb electrode 2 and a pad electrode 7 connected to the comb electrode 2 are appropriately arranged. In order to form the excitation space 4 of the comb electrode 2 on the main surface of the substrate 1, a resin cover 8 is provided. An external electrode 5 serving as an external connection terminal is provided on the surface of the resin cover 8, and the external electrode 5 is connected to the pad electrode 7 by a columnar electrode 6 that penetrates the resin cover 8.

なお、圧電基板1はタンタル酸リチウムやニオブ酸リチウムといった圧電単結晶体で構成し、この圧電基板1上に設けられた櫛形電極2やパッド電極7はアルミニウム或いはアルミニウムを主成分とする合金で構成し、柱状電極6は銅などの金属導体で構成している。   The piezoelectric substrate 1 is composed of a piezoelectric single crystal such as lithium tantalate or lithium niobate, and the comb electrode 2 and the pad electrode 7 provided on the piezoelectric substrate 1 are composed of aluminum or an alloy mainly composed of aluminum. The columnar electrode 6 is made of a metal conductor such as copper.

そして、この弾性表面波デバイスにおいては、樹脂カバー8を櫛形電極2上の励振空間4の側方を囲む内側壁9と、この内側壁9の開口を覆う導体板10と、これら導体板10及び内側壁9をさらに覆う外側壁11で構成するとともに、柱状電極6が内側壁9と外側壁11を貫通する構造とし、外側壁11における励振空間4と対向する表面部分に補助電極12を設け、外側壁11を貫通する柱状電極13で導体板10と補助電極12を接続した構造とすることにより弾性表面波デバイスの耐モールド性を向上させているのである。なお、内側壁9はポリイミド系樹脂で形成し、外側壁11はエポキシ系樹脂で形成し、導体板10及び柱状電極13は銅により形成している。   In this surface acoustic wave device, the resin cover 8 is surrounded by the inner wall 9 surrounding the side of the excitation space 4 on the comb electrode 2, the conductor plate 10 covering the opening of the inner wall 9, the conductor plate 10, The outer wall 11 further covers the inner wall 9 and the columnar electrode 6 penetrates the inner wall 9 and the outer wall 11. The auxiliary electrode 12 is provided on the surface portion of the outer wall 11 facing the excitation space 4. The mold resistance of the surface acoustic wave device is improved by adopting a structure in which the conductor plate 10 and the auxiliary electrode 12 are connected by the columnar electrode 13 penetrating the outer side wall 11. The inner wall 9 is made of a polyimide resin, the outer wall 11 is made of an epoxy resin, and the conductor plate 10 and the columnar electrode 13 are made of copper.

すなわち、この弾性表面波デバイスをモジュール化するようにマザー基板上に実装しトランスファーモールドを行う場合、図2に示すように、弾性表面波デバイスの外部電極5と補助電極12がマザー基板14にハンダ付けされた状態において180℃程度の高温下で且つ5MPa〜10MPaの圧力で樹脂モールドされるため、弾性表面波の外表面に位置する樹脂材料で形成された外側壁11が溶融樹脂15の熱により軟化された状態で矢印で示すようにモールド圧力が加わることになるのであるが、マザー基板14にハンダ付けされた補助電極12と励振空間4を封口している導体板10が柱状電極13で固定されているので、樹脂モールドによる励振空間4の潰れを抑制できる、つまり弾性表面波デバイスの耐モールド性を向上させることが出来るのである。   That is, when the surface acoustic wave device is mounted on a mother substrate so as to be modularized and transfer molding is performed, the external electrode 5 and the auxiliary electrode 12 of the surface acoustic wave device are soldered to the mother substrate 14 as shown in FIG. Since the resin molding is performed at a high temperature of about 180 ° C. and a pressure of 5 MPa to 10 MPa in the attached state, the outer wall 11 formed of a resin material located on the outer surface of the surface acoustic wave is heated by the heat of the molten resin 15. In the softened state, mold pressure is applied as indicated by an arrow, but the auxiliary electrode 12 soldered to the mother substrate 14 and the conductor plate 10 sealing the excitation space 4 are fixed by the columnar electrode 13. Therefore, the collapse of the excitation space 4 by the resin mold can be suppressed, that is, the mold resistance of the surface acoustic wave device is improved. Door is able.

また、溶融樹脂15は樹脂カバー8とマザー基板14の隙間から侵入し樹脂カバー8を押圧するものであるため、樹脂カバー8において構造強度が低い励振空間4の上方部分に補助電極12が設けられることで、この部分に対する溶融樹脂15の侵入が阻害されるので、励振空間4に影響を及ぼすモールド圧力を低減できるのである。   Further, since the molten resin 15 enters from the gap between the resin cover 8 and the mother substrate 14 and presses the resin cover 8, the auxiliary electrode 12 is provided in the upper portion of the excitation space 4 having a low structural strength in the resin cover 8. As a result, the penetration of the molten resin 15 into this portion is hindered, so that the mold pressure affecting the excitation space 4 can be reduced.

また、櫛形電極2と対峙する導体板10が柱状電極13および補助電極12を介してマザー基板に接続されるため、櫛形電極2の励振に伴う発熱を外部電極に伝達できる構成となり、弾性表面波デバイスの放熱特性も合わせて向上させることが出来るのである。   Further, since the conductor plate 10 facing the comb-shaped electrode 2 is connected to the mother substrate via the columnar electrode 13 and the auxiliary electrode 12, the heat generated by the excitation of the comb-shaped electrode 2 can be transmitted to the external electrode, and the surface acoustic wave The heat dissipation characteristics of the device can also be improved.

なお、この弾性表面波デバイスを形成する方法としては、図3に示すように、先ず、フォトリソグラフィーを用いて圧電基板1上に櫛形電極2やパッド電極7をパターン形成し、次いで感光性ポリイミド樹脂を塗布し、露光、現像して櫛形電極2の外周部分を囲むように内側壁9を形成するとともに柱状電極6を形成する貫通孔16を形成し、内側壁9の開口部分を銅箔10aで覆い厚膜めっき10bを施すことで導体板10を形成する。次に、導体板10及び内側壁9を覆うようにレジスト層17を形成するとともに柱状電極6、13を形成する貫通孔16を形成する。そして、この貫通孔16に対してビアフィルめっきを施し柱状電極6、13を形成し、レジスト層17を除去する。その後、外側壁11を形成するエポキシ系樹脂を塗布し上面を研磨し柱状電極6、13の端面を露出させた後に外部電極5と補助電極12を形成することにより弾性表面波デバイスを形成することが出来るのである。   As a method of forming this surface acoustic wave device, as shown in FIG. 3, first, the comb electrode 2 and the pad electrode 7 are patterned on the piezoelectric substrate 1 using photolithography, and then a photosensitive polyimide resin is formed. The inner wall 9 is formed so as to surround the outer peripheral portion of the comb-shaped electrode 2 and the through-hole 16 for forming the columnar electrode 6 is formed, and the opening portion of the inner wall 9 is formed with the copper foil 10a. Conductive plate 10 is formed by applying cover thick film plating 10b. Next, a resist layer 17 is formed so as to cover the conductor plate 10 and the inner wall 9, and a through hole 16 for forming the columnar electrodes 6 and 13 is formed. Then, via fill plating is performed on the through holes 16 to form the columnar electrodes 6 and 13, and the resist layer 17 is removed. Thereafter, the surface acoustic wave device is formed by applying the epoxy resin for forming the outer wall 11 and polishing the upper surface to expose the end surfaces of the columnar electrodes 6 and 13 and then forming the external electrode 5 and the auxiliary electrode 12. Is possible.

本発明に係る弾性表面波デバイスは、弾性表面波デバイスの耐モールド性を向上させることができ、主として移動体通信機器に用いられる面実装型の弾性表面波フィルタや弾性表面波デュプレクサなどの弾性表面波デバイス等において有用となるものである。   The surface acoustic wave device according to the present invention can improve the mold resistance of the surface acoustic wave device, and is mainly a surface mount type surface acoustic wave filter or surface acoustic wave duplexer used for mobile communication equipment. This is useful in wave devices and the like.

本発明の一実施形態における弾性表面波デバイスを模式的に示した断面図Sectional drawing which showed typically the surface acoustic wave device in one embodiment of the present invention 同弾性表面波デバイスを樹脂モールドする際の状態を示した図The figure which showed the state at the time of resin-molding the surface acoustic wave device 同弾性表面波デバイスの製造方法を示した模式図Schematic showing the manufacturing method of the surface acoustic wave device 従来の弾性表面波デバイスを示した断面図Sectional view showing a conventional surface acoustic wave device

符号の説明Explanation of symbols

1 圧電基板
2 櫛形電極
4 励振空間
5 外部電極
6 (第1の)柱状電極
7 パッド電極
8 樹脂カバー
9 内側壁
10 導体板
11 外側壁
12 補助電極
13 (第2の)柱状電極
DESCRIPTION OF SYMBOLS 1 Piezoelectric substrate 2 Comb electrode 4 Excitation space 5 External electrode 6 (First) columnar electrode 7 Pad electrode 8 Resin cover 9 Inner side wall 10 Conductor plate 11 Outer side wall 12 Auxiliary electrode 13 (Second) columnar electrode

Claims (1)

圧電基板と、この圧電基板上に設けられた櫛形電極およびこの櫛形電極に接続されたパッド電極と、前記圧電基板上において前記櫛形電極上の励振空間を囲む樹脂カバーと、前記樹脂カバーの表面に設けられた外部電極と、前記樹脂カバーを貫通し前記パッド電極と前記外部電極を接続する第1の柱状電極を備え、前記樹脂カバーを前記励振空間の側方を囲む内側壁と、この内側壁の開口を覆う導体板と、この導体板及び前記内側壁を覆う外側壁により構成し、前記外側壁における前記櫛形電極の励振空間と対向する表面に補助電極を設けるとともに、前記補助電極と前記導体板を前記外側壁を貫通する第2の柱状電極で接続したことを特徴とする弾性表面波デバイス。 A piezoelectric substrate, a comb electrode provided on the piezoelectric substrate, a pad electrode connected to the comb electrode, a resin cover surrounding the excitation space on the comb electrode on the piezoelectric substrate, and a surface of the resin cover An external electrode provided; a first columnar electrode that passes through the resin cover and connects the pad electrode and the external electrode; and an inner side wall that surrounds the side of the excitation space, and the inner side wall A conductive plate that covers the opening of the electrode, and an outer wall that covers the conductive plate and the inner wall, and an auxiliary electrode is provided on a surface of the outer wall facing the excitation space of the comb-shaped electrode, and the auxiliary electrode and the conductor A surface acoustic wave device characterized in that plates are connected by a second columnar electrode penetrating the outer wall.
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JP2007324162A (en) * 2006-05-30 2007-12-13 Sony Corp Semiconductor device and its manufacturing process
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JP2003037471A (en) * 2001-07-23 2003-02-07 Matsushita Electric Ind Co Ltd Surface acoustic wave device and manufacturing method therefor, and composite module using the device
WO2006134928A1 (en) * 2005-06-16 2006-12-21 Murata Manufacturing Co., Ltd. Piezoelectric device and manufacturing method thereof
JP2007324162A (en) * 2006-05-30 2007-12-13 Sony Corp Semiconductor device and its manufacturing process
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US20110221546A1 (en) * 2010-03-09 2011-09-15 Panasonic Corporation Elastic wave device
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JP2014090340A (en) * 2012-10-30 2014-05-15 Taiyo Yuden Co Ltd Electronic component module
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JP2014093590A (en) * 2012-11-01 2014-05-19 Taiyo Yuden Co Ltd Acoustic wave filter and module
JP2014158100A (en) * 2013-02-14 2014-08-28 Taiyo Yuden Co Ltd Acoustic wave device and method for manufacturing acoustic wave device
JP2015142228A (en) * 2014-01-28 2015-08-03 ナガセケムテックス株式会社 Mounting structure having hollow section and manufacturing method therefor
JPWO2016208287A1 (en) * 2015-06-24 2017-06-29 株式会社村田製作所 Elastic wave filter device
JP2017022744A (en) * 2016-09-07 2017-01-26 太陽誘電株式会社 Acoustic wave filter and module
WO2018181932A1 (en) * 2017-03-31 2018-10-04 京セラ株式会社 Acoustic wave device, duplexer, and communication device
JPWO2018181932A1 (en) * 2017-03-31 2020-01-09 京セラ株式会社 Elastic wave device, duplexer and communication device
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