JP2008124785A - Surface acoustic wave device - Google Patents

Surface acoustic wave device Download PDF

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Publication number
JP2008124785A
JP2008124785A JP2006306345A JP2006306345A JP2008124785A JP 2008124785 A JP2008124785 A JP 2008124785A JP 2006306345 A JP2006306345 A JP 2006306345A JP 2006306345 A JP2006306345 A JP 2006306345A JP 2008124785 A JP2008124785 A JP 2008124785A
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electrode
top plate
acoustic wave
piezoelectric substrate
via electrode
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Atsushi Takano
敦 鷹野
Mitsuhiro Furukawa
光弘 古川
Ryoichi Takayama
了一 高山
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a surface acoustic wave device suppressing frequency variation during surface mounting. <P>SOLUTION: The surface acoustic wave device according to the present invention includes a piezoelectric substrate 11, an interdigital transducer 12 and a pad electrode provided on the piezoelectric substrate 11, a resin wall 14 provided to surround an excitation region of the interdigital electrode 12 on the piezoelectric substrate 11, a top plate 15 covering an opening portion of the resin wall 14 to seal the excitation region, an external electrode 16 provided on the top plate 15 and connected to the pad electrode 13, and a via electrode 17 provided in the top plate 15 and resin wall 14 and connecting the pad electrode 13 and external electrode 16 to each other, wherein the via electrode 17 is divided into a first via electrode 17a disposed on the side of the piezoelectric substrate 11 and a second via electrode 17b disposed on the side of the top plate 15, and the diameter of the first via electrode 17a is made smaller than the diameter of the second via electrode 17b. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、主として移動体通信機器にて使用される表面実装型の弾性表面波デバイスに関するものである。   The present invention relates to a surface-mount type surface acoustic wave device mainly used in mobile communication equipment.

従来のこの種の弾性表面波デバイスとしては、図4に示すように、櫛型電極1の励振領域を形成するために、金属からなる側壁2および天板3で櫛型電極1の励振領域を覆っていた。   As a conventional surface acoustic wave device of this type, as shown in FIG. 4, in order to form the excitation region of the comb-shaped electrode 1, the excitation region of the comb-shaped electrode 1 is formed by the side wall 2 and the top plate 3 made of metal. I covered it.

なお、この出願の発明に関する先行技術文献情報としては、例えば、特許文献1が知られている。
特開2004−364041号公報
As prior art document information relating to the invention of this application, for example, Patent Document 1 is known.
Japanese Patent Laid-Open No. 2004-364041

上記した従来の弾性表面波デバイスは、側壁2が硬い金属で形成されていたため、実装することでこの弾性表面波デバイスの実装面に応力が加わると、側壁2を経由してその応力が圧電基板4に直接伝達されてしまい、これにより、圧電基板4に歪を発生させるため、弾性表面波デバイスの周波数変動を引き起こすという課題を有していた。   In the conventional surface acoustic wave device described above, since the side wall 2 is formed of a hard metal, when stress is applied to the mounting surface of the surface acoustic wave device by mounting, the stress is transmitted via the side wall 2 to the piezoelectric substrate. Therefore, the piezoelectric substrate 4 is distorted to cause a frequency variation of the surface acoustic wave device.

本発明は、上記従来の課題を解決するもので、弾性表面波デバイスにおける面実装時の周波数変動を抑制することを目的とするものである。   The present invention solves the above-described conventional problems, and an object thereof is to suppress frequency fluctuations during surface mounting in a surface acoustic wave device.

上記目的を達成するために本発明は、圧電基板と、この圧電基板上に設けられた櫛型電極およびパッド電極と、圧電基板上において櫛型電極の励振領域を囲むように設けられた樹脂壁と、樹脂壁の開口部を覆い励振領域を密封する天板と、天板上に設けられパッド電極と接続される外部電極と、天板および樹脂壁中に設けられパッド電極と外部電極を接続するビア電極とを備え、ビア電極を圧電基板側に位置する第1のビア電極と天板側に位置する第2のビア電極に分割し、第1のビア電極の径を第2のビア電極の径より小さくする構成としたものである。   To achieve the above object, the present invention provides a piezoelectric substrate, a comb electrode and a pad electrode provided on the piezoelectric substrate, and a resin wall provided on the piezoelectric substrate so as to surround the excitation region of the comb electrode. A top plate that covers the opening of the resin wall and seals the excitation area; an external electrode that is provided on the top plate and connected to the pad electrode; and a pad electrode that is provided in the top plate and the resin wall and connects to the external electrode The via electrode is divided into a first via electrode located on the piezoelectric substrate side and a second via electrode located on the top plate side, and the diameter of the first via electrode is set to the second via electrode. It is set as the structure made smaller than the diameter of this.

本発明の弾性表面波デバイスによれば、面実装時の周波数変動を抑制できるという効果が得られるものである。   According to the surface acoustic wave device of the present invention, it is possible to obtain an effect that frequency fluctuations during surface mounting can be suppressed.

図1は本発明の一実施の形態における弾性表面波デバイスの断面図であり、圧電基板11と、この圧電基板11上に設けられた櫛型電極12およびパッド電極13と、圧電基板11上において櫛型電極12の励振領域を囲むように設けられた樹脂壁14と、樹脂壁14の開口部を覆い励振領域を密封する天板15と、天板15上に設けられパッド電極13と接続される外部電極16と、天板15および樹脂壁14中に設けられパッド電極13と外部電極16を接続するビア電極17とを備え、ビア電極17を圧電基板11側に位置する第1のビア電極17aと天板15側に位置する第2のビア電極17bに分割し、第1のビア電極17aの径を第2のビア電極17bの径より小さくしている。   FIG. 1 is a cross-sectional view of a surface acoustic wave device according to an embodiment of the present invention. In the piezoelectric substrate 11, a comb electrode 12 and a pad electrode 13 provided on the piezoelectric substrate 11, and the piezoelectric substrate 11. The resin wall 14 provided so as to surround the excitation region of the comb-shaped electrode 12, the top plate 15 covering the opening of the resin wall 14 and sealing the excitation region, and the pad electrode 13 provided on the top plate 15 and connected to the pad electrode 13. And a via electrode 17 provided in the top plate 15 and the resin wall 14 to connect the pad electrode 13 and the external electrode 16, and the via electrode 17 is located on the piezoelectric substrate 11 side. 17a and the second via electrode 17b located on the top plate 15 side, and the diameter of the first via electrode 17a is made smaller than the diameter of the second via electrode 17b.

圧電基板11は、39°YカットX伝播LiTaO3で構成され、その表面には弾性表面波を励振及び受信するための櫛型電極12と、この櫛型電極12の信号を取り出すパッド電極13が形成されている。また、圧電基板11上には櫛型電極12の外周部分を囲むように感光性エポキシ樹脂からなる厚み25μmの樹脂壁14が設けられている。また、樹脂壁14中には銅からなる第1のビア電極17aがパッド電極13と接続されるように形成されている。 The piezoelectric substrate 11 is made of 39 ° Y-cut X-propagating LiTaO 3 , and has a comb electrode 12 for exciting and receiving a surface acoustic wave on its surface, and a pad electrode 13 for extracting a signal from the comb electrode 12. Is formed. In addition, a resin wall 14 made of a photosensitive epoxy resin and having a thickness of 25 μm is provided on the piezoelectric substrate 11 so as to surround the outer peripheral portion of the comb-shaped electrode 12. Further, a first via electrode 17 a made of copper is formed in the resin wall 14 so as to be connected to the pad electrode 13.

天板15は、樹脂壁14の開口部を覆い櫛型電極12の励振領域を密封するものであり、特に励振領域と対峙する部分にはグランドに接続される銅製の金属領域18が設けられ、この金属領域18におけるビア電極17部分には、金属領域18とビア電極17を分離するための樹脂層19が設けられている。   The top plate 15 covers the opening of the resin wall 14 and seals the excitation region of the comb-shaped electrode 12. In particular, a copper metal region 18 connected to the ground is provided at a portion facing the excitation region. A resin layer 19 for separating the metal region 18 and the via electrode 17 is provided in the via electrode 17 portion of the metal region 18.

以下、本発明の一実施の形態における弾性表面波デバイスの製造方法について説明する。   Hereinafter, a method for manufacturing a surface acoustic wave device according to an embodiment of the present invention will be described.

まず、図2(a)に示すように、圧電基板11上に櫛型電極12およびパッド電極13を、フォトリソグラフィー技術により形成し、その後、圧電基板11上において櫛型電極12の外周部分を囲むように厚さ25μmの感光性エポキシシートをラミネートし、露光、現像して樹脂壁14を形成する。このとき、第1のビア電極17aに対応する部分に第1の貫通孔20を形成しておく。   First, as shown in FIG. 2A, the comb electrode 12 and the pad electrode 13 are formed on the piezoelectric substrate 11 by photolithography, and then the outer peripheral portion of the comb electrode 12 is surrounded on the piezoelectric substrate 11. In this manner, a photosensitive epoxy sheet having a thickness of 25 μm is laminated, exposed, and developed to form the resin wall 14. At this time, the first through hole 20 is formed in a portion corresponding to the first via electrode 17a.

次に、図2(b)に示すように、樹脂壁14の開口部を覆い櫛型電極12の励振領域を密封するように、銅箔21を樹脂壁14の上端及び開口部の全体にラミネートする。   Next, as shown in FIG. 2B, a copper foil 21 is laminated on the upper end of the resin wall 14 and the entire opening so as to cover the opening of the resin wall 14 and seal the excitation region of the comb electrode 12. To do.

次に、図2(c)に示すように、銅箔21をエッチングし、弾性表面波デバイスの少なくとも信号経路に位置するビア電極17を形成する貫通孔20部分を金属領域18から分離する。   Next, as shown in FIG. 2C, the copper foil 21 is etched to separate from the metal region 18 a portion of the through hole 20 that forms the via electrode 17 positioned at least in the signal path of the surface acoustic wave device.

次に、図3(a)に示すように、銅箔21を形成した面上に感光性樹脂を塗布し、露光、現像した後、160℃、60分で加熱硬化することにより樹脂層19を形成する。このとき、第2のビア電極17bに対応する第2の貫通孔22も同時に形成する。   Next, as shown in FIG. 3A, a photosensitive resin is applied on the surface on which the copper foil 21 is formed, exposed and developed, and then heated and cured at 160 ° C. for 60 minutes to form the resin layer 19. Form. At this time, a second through hole 22 corresponding to the second via electrode 17b is also formed at the same time.

次に、銅箔21の露出部分に対して図3(b)に示すように銅めっき21aを施すことによって、金属領域18の厚みを厚くするとともに、貫通孔20,22を銅で充填し第1、第2のビア電極17a,17bを形成する。   Next, as shown in FIG. 3B, the exposed portion of the copper foil 21 is subjected to copper plating 21a to increase the thickness of the metal region 18 and fill the through holes 20 and 22 with copper. First, second via electrodes 17a and 17b are formed.

最後に、図3(c)に示すように、天板15の上面部分を研磨して平坦化してから第2のビア電極17bに接続する外部電極16を形成する。   Finally, as shown in FIG. 3C, the upper surface portion of the top plate 15 is polished and flattened, and then the external electrode 16 connected to the second via electrode 17b is formed.

上記したように、樹脂壁14を軟質な樹脂で形成しているため、従来のように金属を用いた側壁2に比べて実装面から圧電基板11に加わる応力を緩和できる。   As described above, since the resin wall 14 is formed of a soft resin, the stress applied to the piezoelectric substrate 11 from the mounting surface can be relaxed compared to the side wall 2 using metal as in the past.

また、第1、第2のビア電極17a,17bが金属で構成されているため、実装面となる天板15から応力が加わることにより、第1、第2のビア電極17a,17bを介して応力が伝わるが、圧電基板11側で第1のビア電極17aを第2のビア電極17bの径より小さくしたことにより、圧電基板11と第1のビア電極17aとの当接面積が小さくなり、これにより、第1のビア電極17aが圧電基板11に与える応力を緩和できるため、圧電基板11における歪み量が減り、面実装時の周波数変動を抑制できる。   Since the first and second via electrodes 17a and 17b are made of metal, stress is applied from the top plate 15 serving as a mounting surface, so that the first and second via electrodes 17a and 17b are interposed. Although stress is transmitted, the contact area between the piezoelectric substrate 11 and the first via electrode 17a is reduced by making the first via electrode 17a smaller than the diameter of the second via electrode 17b on the piezoelectric substrate 11 side. Thereby, since the stress which the 1st via electrode 17a gives to the piezoelectric substrate 11 can be relieved, the distortion amount in the piezoelectric substrate 11 reduces, and the frequency variation at the time of surface mounting can be suppressed.

また、上記製造工程において、径の小さい第1のビア電極17aを樹脂壁14部分に設け、径の大きい第2のビア電極17bを天板15部分に設けることによって、それぞれの径の大きさが貫通孔20,22の大きさとして自在に決められるため容易にビア電極17a,17bの径を調節することができるのである。   Further, in the above manufacturing process, the first via electrode 17a having a small diameter is provided in the resin wall 14 portion, and the second via electrode 17b having a large diameter is provided in the top plate 15 portion. Since the sizes of the through holes 20 and 22 are freely determined, the diameters of the via electrodes 17a and 17b can be easily adjusted.

なお、ビア電極17a,17bは元来、電気信号の経路として機能するだけでなく、櫛型電極12の励振による発熱を外部に逃がす役割も果たしているが、圧電基板11側に配置される第1のビア電極17aの径を小さくしたことによって、熱伝達量が低下する。これに対し、本発明では、励振領域に対応する天板15部分にグランドに接続される金属領域18を設けているので、励振領域で発生した輻射熱が金属領域18を介してグランドに放出されるようになり、これにより、弾性表面波デバイスの放熱性が高くなるため、弾性表面波デバイスの耐電力性が向上できるのである。   The via electrodes 17a and 17b not only function as an electric signal path, but also play a role of releasing heat generated by the excitation of the comb-shaped electrode 12 to the outside. However, the via electrodes 17a and 17b are arranged on the piezoelectric substrate 11 side. By reducing the diameter of the via electrode 17a, the amount of heat transfer is reduced. On the other hand, in the present invention, since the metal region 18 connected to the ground is provided in the top plate 15 corresponding to the excitation region, the radiant heat generated in the excitation region is released to the ground through the metal region 18. As a result, the heat dissipation of the surface acoustic wave device is enhanced, and the power durability of the surface acoustic wave device can be improved.

本発明に係る弾性表面波デバイスは、面実装時の周波数変動を抑制できるという効果を有するものであり、主として移動体通信機器に用いられる面実装型の弾性表面波フィルタや弾性表面波デュプレクサなどの弾性表面波デバイス等において有用となるものである。   The surface acoustic wave device according to the present invention has an effect of suppressing frequency fluctuations during surface mounting, such as a surface mounting type surface acoustic wave filter or a surface acoustic wave duplexer mainly used in mobile communication devices. This is useful in a surface acoustic wave device or the like.

本発明の一実施の形態における弾性表面波デバイスの断面図Sectional drawing of the surface acoustic wave device in one embodiment of this invention 同弾性表面波デバイスの製造工程を示す断面図Sectional drawing which shows the manufacturing process of the surface acoustic wave device 同弾性表面波デバイスの製造工程を示す断面図Sectional drawing which shows the manufacturing process of the surface acoustic wave device 従来の弾性表面波デバイスの断面図Sectional view of a conventional surface acoustic wave device

符号の説明Explanation of symbols

11 圧電基板
12 櫛型電極
13 パッド電極
14 樹脂壁
15 天板
16 外部電極
17 ビア電極
17a 第1のビア電極
17b 第2のビア電極
DESCRIPTION OF SYMBOLS 11 Piezoelectric substrate 12 Comb electrode 13 Pad electrode 14 Resin wall 15 Top plate 16 External electrode 17 Via electrode 17a 1st via electrode 17b 2nd via electrode

Claims (3)

圧電基板と、この圧電基板上に設けられた櫛型電極およびパッド電極と、前記圧電基板上において前記櫛型電極の励振領域を囲むように設けられた樹脂壁と、前記樹脂壁の開口部を覆い前記励振領域を密封する天板と、前記天板上に設けられ前記パッド電極と接続される外部電極と、前記天板および前記樹脂壁中に設けられ前記パッド電極と前記外部電極を接続するビア電極とを備え、前記ビア電極を前記圧電基板側に位置する第1のビア電極と前記天板側に位置する第2のビア電極に分割し、前記第1のビア電極の径を前記第2のビア電極の径より小さくしたことを特徴とする弾性表面波デバイス。 A piezoelectric substrate; a comb electrode and a pad electrode provided on the piezoelectric substrate; a resin wall provided on the piezoelectric substrate so as to surround an excitation region of the comb electrode; and an opening of the resin wall. Covering the top plate for sealing the excitation region, an external electrode provided on the top plate and connected to the pad electrode, and provided in the top plate and the resin wall to connect the pad electrode and the external electrode A via electrode, and the via electrode is divided into a first via electrode located on the piezoelectric substrate side and a second via electrode located on the top plate side, and the diameter of the first via electrode is the first via electrode. A surface acoustic wave device characterized in that the surface acoustic wave device is smaller than the diameter of the via electrode. 第1のビア電極を樹脂壁部分に設け、第2のビア電極を天板部分に設けたことを特徴とする請求項1記載の弾性表面波デバイス。 2. The surface acoustic wave device according to claim 1, wherein the first via electrode is provided on the resin wall portion, and the second via electrode is provided on the top plate portion. 励振領域部分に対応する天板部分にグランド接続される金属領域を設けたことを特徴とする請求項1記載の弾性表面波デバイス。 2. The surface acoustic wave device according to claim 1, further comprising a metal region that is grounded to a top plate portion corresponding to the excitation region portion.
JP2006306345A 2006-11-13 2006-11-13 Surface acoustic wave device Pending JP2008124785A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010081006A (en) * 2008-09-24 2010-04-08 Panasonic Corp Surface acoustic wave device
US8810111B2 (en) 2008-11-28 2014-08-19 Kyocera Corporation Acoustic wave device and method for manufacturing same
US10707830B2 (en) 2014-06-27 2020-07-07 Murata Manufacturing Co., Ltd. Elastic wave device and method for manufacturing the same

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010081006A (en) * 2008-09-24 2010-04-08 Panasonic Corp Surface acoustic wave device
US8810111B2 (en) 2008-11-28 2014-08-19 Kyocera Corporation Acoustic wave device and method for manufacturing same
CN104104356A (en) * 2008-11-28 2014-10-15 京瓷株式会社 Acoustic wave device and circuit substrate
US8975803B2 (en) 2008-11-28 2015-03-10 Kyocera Corporation Acoustic wave device and method for manufacturing same
US10193525B2 (en) 2008-11-28 2019-01-29 Kyocera Corporation Acoustic wave device and method for manufacturing same
US10707830B2 (en) 2014-06-27 2020-07-07 Murata Manufacturing Co., Ltd. Elastic wave device and method for manufacturing the same

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