JP2009188349A5 - - Google Patents
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- Publication number
- JP2009188349A5 JP2009188349A5 JP2008029477A JP2008029477A JP2009188349A5 JP 2009188349 A5 JP2009188349 A5 JP 2009188349A5 JP 2008029477 A JP2008029477 A JP 2008029477A JP 2008029477 A JP2008029477 A JP 2008029477A JP 2009188349 A5 JP2009188349 A5 JP 2009188349A5
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- insulating film
- processing
- range
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 33
- 238000002407 reforming Methods 0.000 claims 12
- 239000007789 gas Substances 0.000 claims 11
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 7
- 229910001882 dioxygen Inorganic materials 0.000 claims 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 4
- 238000012986 modification Methods 0.000 claims 4
- 230000004048 modification Effects 0.000 claims 4
- 229910052710 silicon Inorganic materials 0.000 claims 4
- 239000010703 silicon Substances 0.000 claims 4
- 150000002500 ions Chemical class 0.000 claims 3
- 238000005229 chemical vapour deposition Methods 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 claims 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 claims 1
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008029477A JP5374749B2 (ja) | 2008-02-08 | 2008-02-08 | 絶縁膜の形成方法、コンピュータ読み取り可能な記憶媒体および処理システム |
| US12/865,969 US8034179B2 (en) | 2008-02-08 | 2009-02-06 | Method for insulating film formation, storage medium from which information is readable with computer, and processing system |
| KR1020107017596A KR101248651B1 (ko) | 2008-02-08 | 2009-02-06 | 절연막의 형성 방법, 컴퓨터 판독 가능한 기억 매체 및 처리 시스템 |
| TW098103865A TWI445083B (zh) | 2008-02-08 | 2009-02-06 | Insulation film formation method, the computer can read the memory media and processing system |
| PCT/JP2009/052447 WO2009099254A1 (ja) | 2008-02-08 | 2009-02-06 | 絶縁膜の形成方法、コンピュータ読み取り可能な記憶媒体および処理システム |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008029477A JP5374749B2 (ja) | 2008-02-08 | 2008-02-08 | 絶縁膜の形成方法、コンピュータ読み取り可能な記憶媒体および処理システム |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009188349A JP2009188349A (ja) | 2009-08-20 |
| JP2009188349A5 true JP2009188349A5 (enrdf_load_stackoverflow) | 2011-03-17 |
| JP5374749B2 JP5374749B2 (ja) | 2013-12-25 |
Family
ID=41071263
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008029477A Expired - Fee Related JP5374749B2 (ja) | 2008-02-08 | 2008-02-08 | 絶縁膜の形成方法、コンピュータ読み取り可能な記憶媒体および処理システム |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5374749B2 (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5813303B2 (ja) | 2009-11-20 | 2015-11-17 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法および基板処理装置 |
| JP6419762B2 (ja) * | 2016-09-06 | 2018-11-07 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、基板処理装置およびプログラム |
| JP6456893B2 (ja) | 2016-09-26 | 2019-01-23 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、記録媒体および基板処理装置 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ATE514181T1 (de) * | 2000-03-13 | 2011-07-15 | Tadahiro Ohmi | Verfahren zur ausbildung eines dielektrischen films |
| JP2005303074A (ja) * | 2004-04-13 | 2005-10-27 | Renesas Technology Corp | 薄膜形成装置および薄膜形成方法 |
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2008
- 2008-02-08 JP JP2008029477A patent/JP5374749B2/ja not_active Expired - Fee Related