JP2009188251A5 - - Google Patents

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Publication number
JP2009188251A5
JP2009188251A5 JP2008027735A JP2008027735A JP2009188251A5 JP 2009188251 A5 JP2009188251 A5 JP 2009188251A5 JP 2008027735 A JP2008027735 A JP 2008027735A JP 2008027735 A JP2008027735 A JP 2008027735A JP 2009188251 A5 JP2009188251 A5 JP 2009188251A5
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JP
Japan
Prior art keywords
pulse laser
laser
irradiation
evaluation sample
irradiated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2008027735A
Other languages
English (en)
Japanese (ja)
Other versions
JP5498659B2 (ja
JP2009188251A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2008027735A priority Critical patent/JP5498659B2/ja
Priority claimed from JP2008027735A external-priority patent/JP5498659B2/ja
Priority to US12/361,284 priority patent/US8045184B2/en
Publication of JP2009188251A publication Critical patent/JP2009188251A/ja
Publication of JP2009188251A5 publication Critical patent/JP2009188251A5/ja
Priority to US13/279,559 priority patent/US8144341B2/en
Priority to US13/428,297 priority patent/US8339613B2/en
Application granted granted Critical
Publication of JP5498659B2 publication Critical patent/JP5498659B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2008027735A 2008-02-07 2008-02-07 レーザ照射位置安定性評価方法及びレーザ照射装置 Expired - Fee Related JP5498659B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2008027735A JP5498659B2 (ja) 2008-02-07 2008-02-07 レーザ照射位置安定性評価方法及びレーザ照射装置
US12/361,284 US8045184B2 (en) 2008-02-07 2009-01-28 Making method of sample for evaluation of laser irradiation position and making apparatus thereof and evaluation method of stability of laser irradiation position and evaluation apparatus thereof
US13/279,559 US8144341B2 (en) 2008-02-07 2011-10-24 Making method of sample for evaluation of laser irradiation position and making apparatus thereof and evaluation method of stability of laser irradiation position and evaluation apparatus thereof
US13/428,297 US8339613B2 (en) 2008-02-07 2012-03-23 Making method of sample for evaluation of laser irradiation position and making apparatus thereof and evaluation method of stability of laser irradiation position and evaluation apparatus thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008027735A JP5498659B2 (ja) 2008-02-07 2008-02-07 レーザ照射位置安定性評価方法及びレーザ照射装置

Publications (3)

Publication Number Publication Date
JP2009188251A JP2009188251A (ja) 2009-08-20
JP2009188251A5 true JP2009188251A5 (https=) 2011-03-10
JP5498659B2 JP5498659B2 (ja) 2014-05-21

Family

ID=41012954

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008027735A Expired - Fee Related JP5498659B2 (ja) 2008-02-07 2008-02-07 レーザ照射位置安定性評価方法及びレーザ照射装置

Country Status (2)

Country Link
US (3) US8045184B2 (https=)
JP (1) JP5498659B2 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5498659B2 (ja) * 2008-02-07 2014-05-21 株式会社半導体エネルギー研究所 レーザ照射位置安定性評価方法及びレーザ照射装置
US8735207B2 (en) * 2011-04-05 2014-05-27 Taiwan Semiconductor Manufacturing Company, Ltd. Method to avoid fixed pattern noise within backside illuminated (BSI) complementary metal-oxide-semiconductor (CMOS) sensor array
US9255915B2 (en) 2012-05-11 2016-02-09 Siemens Energy, Inc. Evaluating a process effect of surface presentation angle
US9835532B2 (en) * 2012-10-30 2017-12-05 The Penn State Research Foundation 3D laser ablation tomography and spectrographic analysis
US9437041B2 (en) 2012-10-30 2016-09-06 The Penn State Research Foundation 3D laser ablation tomography
WO2015100716A1 (zh) * 2014-01-02 2015-07-09 清华大学 一种评价激光器稳定性的方法
KR20170037633A (ko) * 2014-07-21 2017-04-04 어플라이드 머티어리얼스, 인코포레이티드 스캐닝형 펄스 어닐링 장치 및 방법
DE102014013160B4 (de) * 2014-09-11 2018-01-11 ProASSORT GmbH Verfahren und Vorrichtung zur Sortierung von wiederverwertbaren Rohstoffstücken
CN105471064A (zh) * 2016-02-01 2016-04-06 李良杰 运动发电机
US11909091B2 (en) 2020-05-19 2024-02-20 Kymeta Corporation Expansion compensation structure for an antenna

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4689491A (en) * 1985-04-19 1987-08-25 Datasonics Corp. Semiconductor wafer scanning system
US5091963A (en) 1988-05-02 1992-02-25 The Standard Oil Company Method and apparatus for inspecting surfaces for contrast variations
JPH02260419A (ja) * 1989-03-30 1990-10-23 Matsushita Electric Ind Co Ltd レーザ照射方法
KR100300618B1 (ko) * 1992-12-25 2001-11-22 오노 시게오 노광방법,노광장치,및그장치를사용하는디바이스제조방법
JP3343492B2 (ja) * 1997-04-02 2002-11-11 シャープ株式会社 薄膜半導体装置の製造方法
JP3679558B2 (ja) 1997-07-31 2005-08-03 アルプス電気株式会社 境界線の検出方法およびこの検出方法を用いた磁気ヘッドの位置決め方法および位置決め装置
JP2000031229A (ja) 1998-07-14 2000-01-28 Toshiba Corp 半導体薄膜の検査方法及びそれを用いた半導体薄膜の製造方法
JP4016504B2 (ja) 1998-10-05 2007-12-05 セイコーエプソン株式会社 半導体膜の製造方法及びアニール装置
JP2001023918A (ja) 1999-07-08 2001-01-26 Nec Corp 半導体薄膜形成装置
JP4556266B2 (ja) 2000-01-07 2010-10-06 ソニー株式会社 ポリシリコン評価方法、ポリシリコン検査装置、薄膜トランジスタ製造方法、及び、アニール処理装置
TW490802B (en) 2000-01-07 2002-06-11 Sony Corp Polysilicon evaluating method, polysilicon inspection apparatus and method for preparation of thin film transistor
JP2002158186A (ja) 2000-11-21 2002-05-31 Toshiba Corp レーザアニール方法およびその装置
JP4586266B2 (ja) * 2000-12-18 2010-11-24 ソニー株式会社 薄膜トランジスタ製造システム及び物体表面の評価装置
TWI249215B (en) 2001-06-01 2006-02-11 Toshiba Corp Film quality inspecting method and film quality inspecting apparatus
US6836532B2 (en) 2001-06-29 2004-12-28 Bruker Axs, Inc. Diffraction system for biological crystal screening
TWI291729B (en) 2001-11-22 2007-12-21 Semiconductor Energy Lab A semiconductor fabricating apparatus
JP3930333B2 (ja) 2002-01-31 2007-06-13 Dowaホールディングス株式会社 物品表面の検査システム
JP4463600B2 (ja) * 2003-03-26 2010-05-19 株式会社半導体エネルギー研究所 評価方法
US8346497B2 (en) 2003-03-26 2013-01-01 Semiconductor Energy Laboratory Co., Ltd. Method for testing semiconductor film, semiconductor device and manufacturing method thereof
US7425703B2 (en) * 2004-02-20 2008-09-16 Ebara Corporation Electron beam apparatus, a device manufacturing method using the same apparatus, a pattern evaluation method, a device manufacturing method using the same method, and a resist pattern or processed wafer evaluation method
JP2006237525A (ja) * 2005-02-28 2006-09-07 Nec Lcd Technologies Ltd レーザ照射方法及び装置
JP4339330B2 (ja) * 2006-04-19 2009-10-07 日本電気株式会社 レーザ照射方法及びレーザ照射装置
JP5498659B2 (ja) * 2008-02-07 2014-05-21 株式会社半導体エネルギー研究所 レーザ照射位置安定性評価方法及びレーザ照射装置

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