JP2009188133A5 - - Google Patents
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- Publication number
- JP2009188133A5 JP2009188133A5 JP2008025632A JP2008025632A JP2009188133A5 JP 2009188133 A5 JP2009188133 A5 JP 2009188133A5 JP 2008025632 A JP2008025632 A JP 2008025632A JP 2008025632 A JP2008025632 A JP 2008025632A JP 2009188133 A5 JP2009188133 A5 JP 2009188133A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- silicon
- silicon carbide
- manufacturing
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 16
- 229910010271 silicon carbide Inorganic materials 0.000 claims 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 14
- 239000004065 semiconductor Substances 0.000 claims 14
- 229910052710 silicon Inorganic materials 0.000 claims 14
- 239000010703 silicon Substances 0.000 claims 14
- 238000004519 manufacturing process Methods 0.000 claims 13
- 238000000034 method Methods 0.000 claims 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 2
- 229910052799 carbon Inorganic materials 0.000 claims 2
- 230000001678 irradiating effect Effects 0.000 claims 2
- 238000002679 ablation Methods 0.000 claims 1
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 1
- 238000002844 melting Methods 0.000 claims 1
- 230000008018 melting Effects 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008025632A JP5157026B2 (ja) | 2008-02-05 | 2008-02-05 | 半導体膜の製造方法、半導体装置の製造方法、電子機器の製造方法、半導体膜、半導体装置および電子機器 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008025632A JP5157026B2 (ja) | 2008-02-05 | 2008-02-05 | 半導体膜の製造方法、半導体装置の製造方法、電子機器の製造方法、半導体膜、半導体装置および電子機器 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009188133A JP2009188133A (ja) | 2009-08-20 |
| JP2009188133A5 true JP2009188133A5 (cg-RX-API-DMAC7.html) | 2011-03-24 |
| JP5157026B2 JP5157026B2 (ja) | 2013-03-06 |
Family
ID=41071101
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008025632A Expired - Fee Related JP5157026B2 (ja) | 2008-02-05 | 2008-02-05 | 半導体膜の製造方法、半導体装置の製造方法、電子機器の製造方法、半導体膜、半導体装置および電子機器 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5157026B2 (cg-RX-API-DMAC7.html) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9257283B2 (en) * | 2012-08-06 | 2016-02-09 | General Electric Company | Device having reduced bias temperature instability (BTI) |
| CN116779659A (zh) * | 2022-03-18 | 2023-09-19 | 意法半导体股份有限公司 | 形成基于3C－SiC的电子器件以及3C－SiC电子器件 |
| US12593485B2 (en) | 2022-03-18 | 2026-03-31 | Stmicroelectronics S.R.L. | Forming an electronic device, such as a JBS or MPS diode, based on 3C—SiC, and 3C—SiC electronic device |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01297813A (ja) * | 1988-05-25 | 1989-11-30 | Sony Corp | シリコンカーバイドの製造方法 |
| JPH03173418A (ja) * | 1989-12-01 | 1991-07-26 | Nec Corp | 表面改質方法及び表面改質装置 |
| JP2005223215A (ja) * | 2004-02-06 | 2005-08-18 | Japan Science & Technology Agency | Ｓｉ基板上への炭化珪素単結晶膜の製造方法及びそれを用いて製造される炭化珪素半導体装置 |
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2008
- 2008-02-05 JP JP2008025632A patent/JP5157026B2/ja not_active Expired - Fee Related