JP2009177211A - 半導体素子およびその製造方法 - Google Patents

半導体素子およびその製造方法 Download PDF

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Publication number
JP2009177211A
JP2009177211A JP2009114735A JP2009114735A JP2009177211A JP 2009177211 A JP2009177211 A JP 2009177211A JP 2009114735 A JP2009114735 A JP 2009114735A JP 2009114735 A JP2009114735 A JP 2009114735A JP 2009177211 A JP2009177211 A JP 2009177211A
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Japan
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concentrated
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JP2009114735A
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English (en)
Japanese (ja)
Inventor
Masayuki Hata
雅幸 畑
Tadao Toda
忠夫 戸田
Shigeyuki Okamoto
重之 岡本
Daijiro Inoue
大二朗 井上
Yasuyuki Bessho
靖之 別所
Yasuhiko Nomura
康彦 野村
Tsutomu Yamaguchi
勤 山口
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Sanyo Electric Co Ltd
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Sanyo Electric Co Ltd
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Priority to JP2009114735A priority Critical patent/JP2009177211A/ja
Publication of JP2009177211A publication Critical patent/JP2009177211A/ja
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JP2009114735A 2003-02-07 2009-05-11 半導体素子およびその製造方法 Pending JP2009177211A (ja)

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JP2009114735A JP2009177211A (ja) 2003-02-07 2009-05-11 半導体素子およびその製造方法

Applications Claiming Priority (2)

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JP2003031416 2003-02-07
JP2009114735A JP2009177211A (ja) 2003-02-07 2009-05-11 半導体素子およびその製造方法

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JP2007089897A Division JP2007180589A (ja) 2003-02-07 2007-03-29 半導体素子およびその製造方法

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JP2009177211A true JP2009177211A (ja) 2009-08-06

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JP2009114735A Pending JP2009177211A (ja) 2003-02-07 2009-05-11 半導体素子およびその製造方法

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JP (1) JP2009177211A (zh)
CN (4) CN100533794C (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021070276A1 (ja) * 2019-10-09 2021-04-15 ウシオオプトセミコンダクター株式会社 半導体発光装置

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11233893A (ja) * 1998-02-18 1999-08-27 Sharp Corp 半導体発光素子及びその製造方法
JP2002009004A (ja) * 1999-11-15 2002-01-11 Matsushita Electric Ind Co Ltd 窒化物半導体の製造方法、窒化物半導体素子の製造方法、窒化物半導体素子、半導体発光素子及びその製造方法
JP2002009338A (ja) * 2000-06-21 2002-01-11 Nichia Chem Ind Ltd 窒化物半導体素子
JP2002314198A (ja) * 2001-04-13 2002-10-25 Sony Corp 半導体レーザ
WO2003005515A1 (fr) * 2001-07-02 2003-01-16 Nichia Corporation Dispositif laser a semiconducteur gan et systeme d'information sur disque optique utilisant ce dispositif laser
JP2003229638A (ja) * 2002-02-05 2003-08-15 Sumitomo Electric Ind Ltd 窒化物系化合物半導体発光素子
JP2003273470A (ja) * 2002-01-10 2003-09-26 Sharp Corp Ｉｉｉ族窒化物半導体レーザ素子
JP2004006886A (ja) * 1997-11-26 2004-01-08 Nichia Chem Ind Ltd 窒化物半導体の成長方法及び窒化物半導体素子
JP2004022785A (ja) * 2002-06-17 2004-01-22 Sony Corp 窒化ガリウム系半導体素子の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5719605A (en) * 1996-11-20 1998-02-17 Lexmark International, Inc. Large array heater chips for thermal ink jet printheads
EP0871228A3 (en) * 1997-04-09 2001-10-24 Matsushita Electric Industrial Co., Ltd. Semiconductor substrate, semiconductor device and method of manufacturing the same
JP2002033512A (ja) * 2000-07-13 2002-01-31 Nichia Chem Ind Ltd 窒化物半導体発光ダイオード

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004006886A (ja) * 1997-11-26 2004-01-08 Nichia Chem Ind Ltd 窒化物半導体の成長方法及び窒化物半導体素子
JPH11233893A (ja) * 1998-02-18 1999-08-27 Sharp Corp 半導体発光素子及びその製造方法
JP2002009004A (ja) * 1999-11-15 2002-01-11 Matsushita Electric Ind Co Ltd 窒化物半導体の製造方法、窒化物半導体素子の製造方法、窒化物半導体素子、半導体発光素子及びその製造方法
JP2002009338A (ja) * 2000-06-21 2002-01-11 Nichia Chem Ind Ltd 窒化物半導体素子
JP2002314198A (ja) * 2001-04-13 2002-10-25 Sony Corp 半導体レーザ
WO2003005515A1 (fr) * 2001-07-02 2003-01-16 Nichia Corporation Dispositif laser a semiconducteur gan et systeme d'information sur disque optique utilisant ce dispositif laser
JP2003273470A (ja) * 2002-01-10 2003-09-26 Sharp Corp Ｉｉｉ族窒化物半導体レーザ素子
JP2003229638A (ja) * 2002-02-05 2003-08-15 Sumitomo Electric Ind Ltd 窒化物系化合物半導体発光素子
JP2004022785A (ja) * 2002-06-17 2004-01-22 Sony Corp 窒化ガリウム系半導体素子の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021070276A1 (ja) * 2019-10-09 2021-04-15 ウシオオプトセミコンダクター株式会社 半導体発光装置

Also Published As

Publication number Publication date
CN101114688A (zh) 2008-01-30
CN100511742C (zh) 2009-07-08
CN101521254B (zh) 2011-06-01
CN100533794C (zh) 2009-08-26
CN101521254A (zh) 2009-09-02
CN101222116B (zh) 2010-06-23
CN101114687A (zh) 2008-01-30
CN101222116A (zh) 2008-07-16

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