JP2009170478A - Multilayer base film for surface protective tape - Google Patents
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Abstract
Description
本発明は、半導体ウェハの裏面研削（以下、バックグラインドという）工程で使用される表面保護テープのベースとなる多層基体フィルムに関する。 The present invention relates to a multilayer substrate film that serves as a base of a surface protection tape used in a back grinding (hereinafter referred to as back grinding) process of a semiconductor wafer.
半導体を製造する場合には、半導体ウェハの表面にイオン注入、エッチング等で回路を形成した後、ウェハを所定の厚さにするためにウェハの回路形成面とは反対面をグラインダー等で研削するバックグラインド工程を経るのが一般的である。 When manufacturing a semiconductor, a circuit is formed on the surface of a semiconductor wafer by ion implantation, etching, etc., and then the surface opposite to the circuit formation surface of the wafer is ground with a grinder or the like to make the wafer a predetermined thickness. It is common to go through a back grinding process.
この半導体ウェハのバックグラインド時に、半導体ウェハの破損を防止したり、研削加工を容易にするため、半導体ウェハの回路形成面（表面）に粘着剤層を有する裏面研削用表面保護テープを貼着して保護する方法がとられている。 In order to prevent damage to the semiconductor wafer and to facilitate grinding during the back grinding of the semiconductor wafer, a surface protection tape for back surface grinding having an adhesive layer is applied to the circuit forming surface (front surface) of the semiconductor wafer. To protect it.
近年、ＩＣカードや各種携帯端末用等バックグラインド後の厚みが薄いものが求められている。従来半導体ウェハの厚みが３００μｍ程度であったものが、最近では１００μｍあるいはそれよりも薄くなってきている。半導体ウェハの薄肉化は、半導体ウェハの強度が低下すると共に、バックグラインド中に半導体ウェハが破損したりする問題を抱えていた。 In recent years, there has been a demand for IC cards and various portable terminals that have a thin thickness after back grinding. A conventional semiconductor wafer having a thickness of about 300 μm has recently become 100 μm or thinner. The thinning of the semiconductor wafer has problems that the strength of the semiconductor wafer is reduced and the semiconductor wafer is damaged during back grinding.
このような状況の中、半導体ウェハのバックグラインド時に使用される表面保護テープについて、様々な提案がなされている。
本発明は、このような状況に鑑みなされたものであって、半導体ウェハのバックグラインド時に、半導体ウェハの破損を抑制することが出来る表面保護テープ用多層基体フィルムを提供することを主な目的とする。 The present invention has been made in view of such a situation, and a main object of the present invention is to provide a multilayer base film for a surface protection tape capable of suppressing damage to a semiconductor wafer during back grinding of the semiconductor wafer. To do.
本発明は、密度が０．９１０〜０．９２０ｇ／ｃｍ３であるポリエチレン系樹脂を含む層を中間層（Ｂ）とし、エチレン−酢酸ビニル共重合体を含む層を表面層（Ａ）及び裏面層（Ｃ）とする表面保護テープ用多層基体フィルムを提供する。 In the present invention, a layer containing a polyethylene resin having a density of 0.910 to 0.920 g / cm 3 is used as an intermediate layer (B), and a layer containing an ethylene-vinyl acetate copolymer is used as a surface layer (A) and a back surface. Provided is a multilayer substrate film for a surface protective tape as a layer (C).
また、本発明は、前記エチレン−酢酸ビニル共重合体の酢酸ビニル含有量が８〜１２重量％である前記表面保護テープ用多層基体フィルムを提供する。 The present invention also provides the multilayer substrate film for a surface protection tape, wherein the ethylene-vinyl acetate copolymer has a vinyl acetate content of 8 to 12% by weight.
本発明の表面保護テープ用多層基体フィルムは柔軟性に優れるため、バックグラインド工程中に半導体ウェハが破損することがない。 Since the multilayer base film for surface protection tape of the present invention is excellent in flexibility, the semiconductor wafer is not damaged during the back grinding process.
本発明の表面保護テープ用多層基体フィルムは、密度が０．９１０〜０．９２０ｇ／ｃｍ３であるポリエチレン系樹脂を含む層を中間層（Ｂ）とし、エチレン−酢酸ビニル共重合体を含む層を表面層（Ａ）及び裏面層（Ｃ）とする。 The multilayer substrate film for a surface protection tape of the present invention has a layer containing a polyethylene resin having a density of 0.910 to 0.920 g / cm 3 as an intermediate layer (B) and a layer containing an ethylene-vinyl acetate copolymer. Are the surface layer (A) and the back layer (C).
また、本発明の表面保護テープ用多層基体フィルムは、前記エチレン−酢酸ビニル共重合体の酢酸ビニル含有量が５〜２０重量％である。 Moreover, the multilayer base film for surface protection tapes of this invention is 5-20 weight% of vinyl acetate content of the said ethylene-vinyl acetate copolymer.
以下、詳細に説明する。 This will be described in detail below.
本発明で用いられるポリエチレン系樹脂は、エチレンの単独重合体として、高圧法すなわち１０００気圧以上の高圧下ラジカル重合法で製造され、エチル基などの短鎖分岐のほか長鎖分岐を含み、密度の低い分岐状低密度ポリエチレンが例示できる。 The polyethylene-based resin used in the present invention is produced as a homopolymer of ethylene by a high-pressure method, that is, a radical polymerization method under a high pressure of 1000 atm or higher, and includes long-chain branches in addition to short-chain branches such as ethyl groups. A low branched low density polyethylene can be exemplified.
分岐状低密度ポリエチレンの密度としては、０．９１０〜０．９２０ｇ／ｃｍ３の範囲が好ましい。密度が０．９１０ｇ／ｃｍ３より低いと低分子量分が増えて、押出成形時の熱劣化によりフィッシュアイが発生しやすくなる。一方、密度が０．９２０ｇ／ｃｍ３より高くなると、柔軟性が悪くなりクッション性がなくなるため、バックグラインド時にウェハが破損する場合がある。ＭＦＲ（温度１９０℃、荷重２１．２Ｎ）は０．８〜３０ｇ／１０分、好ましくは２〜１０ｇ／１０分の範囲である。 The density of the branched low density polyethylene is preferably in the range of 0.910 to 0.920 g / cm 3 . When the density is lower than 0.910 g / cm 3 , the low molecular weight component increases, and fish eyes are likely to be generated due to thermal deterioration during extrusion molding. On the other hand, when the density is higher than 0.920 g / cm 3 , the flexibility is deteriorated and the cushioning property is lost, so that the wafer may be damaged during back grinding. The MFR (temperature 190 ° C., load 21.2 N) is in the range of 0.8 to 30 g / 10 minutes, preferably 2 to 10 g / 10 minutes.
本発明で用いられるエチレン−酢酸ビニル共重合体としては、酢酸ビニルの含有量が５〜２０重量％、好ましくは８〜１８重量％である。酢酸ビニル含有量がかかる範囲であると、柔軟性と良好な製膜性（厚薄精度）となり好ましい。エチレン−酢酸ビニル共重合体の密度としては０．９２３〜０．９４１ｇ／ｃｍ３、好ましくは０．９２５〜０．９３６ｇ／ｃｍ３であり、ＭＦＲ（温度１９０℃、荷重２１．２Ｎ）は１〜３０ｇ／１０分、好ましくは３〜１５ｇ／１０分の範囲にあることが好ましい。 The ethylene-vinyl acetate copolymer used in the present invention has a vinyl acetate content of 5 to 20% by weight, preferably 8 to 18% by weight. When the vinyl acetate content is within such a range, flexibility and good film forming properties (thickness accuracy) are preferable. The density of the ethylene-vinyl acetate copolymer is 0.923 to 0.941 g / cm 3 , preferably 0.925 to 0.936 g / cm 3 , and the MFR (temperature 190 ° C., load 21.2 N) is 1. It is preferable to be in the range of ˜30 g / 10 minutes, preferably 3 to 15 g / 10 minutes.
本発明の表面保護テープ用多層基体フィルムは、前記ポリエチレン系樹脂が中間層（Ｂ）を構成し、前記エチレン−酢酸ビニル共重合体が表面層（Ａ）及び裏面層（Ｃ）を構成し、Ａ／Ｂ／Ｃの順に積層された３層の多層フィルムからなる。 In the multilayer base film for a surface protection tape of the present invention, the polyethylene resin constitutes an intermediate layer (B), the ethylene-vinyl acetate copolymer constitutes a surface layer (A) and a back layer (C), It consists of a three-layer multilayer film laminated in the order of A / B / C.
本発明の表面保護テープ用基体フィルムの層（Ａ）及び層（Ｃ）には、本発明の効果を損なわない範囲で、酸化防止剤、帯電防止剤、アンチブロッキング剤などの添加剤を添加してもよい。 Additives such as an antioxidant, an antistatic agent and an antiblocking agent are added to the layer (A) and the layer (C) of the base film for surface protection tape of the present invention within a range not impairing the effects of the present invention. May be.
本発明における表面保護テープ用多層基体フィルムの総厚みは、５０〜３００μｍであり、好ましくは６０〜２５０μｍ、より好ましくは８０〜２００μｍである。 The total thickness of the multilayer substrate film for surface protection tape in the present invention is 50 to 300 μm, preferably 60 to 250 μm, more preferably 80 to 200 μm.
各層の厚さは以下のとおりである。 The thickness of each layer is as follows.
本発明における表面保護テープ用多層基体フィルムの総厚みに対し、総厚みを１００とした場合、表面層（Ａ）の厚みの割合は、１０〜４０％、好ましくは２０〜４０％であり、中間層（Ｂ）の厚みの割合は、２０〜８０％、好ましくは２０〜６０％であり、裏面層（Ｃ）の厚みの割合は、１０〜４０％、好ましくは２０〜４０％である。各層の厚みがこのような割合であると、良好な層間厚み精度となり好ましい。 When the total thickness is 100 with respect to the total thickness of the multilayer substrate film for surface protection tape in the present invention, the ratio of the thickness of the surface layer (A) is 10 to 40%, preferably 20 to 40%, The ratio of the thickness of the layer (B) is 20 to 80%, preferably 20 to 60%, and the ratio of the thickness of the back layer (C) is 10 to 40%, preferably 20 to 40%. When the thickness of each layer is such a ratio, it is preferable because the interlayer thickness accuracy is good.
表面保護テープ用多層基体フィルムの厚みの具体例としては、表面保護テープ用多層基体フィルムの総厚みが８０〜２００μｍである場合、表面層（Ａ）の厚みは、８〜８０μｍ、好ましくは１６〜８０μｍである。中間層（Ｂ）の厚みは、１６〜１６０μｍ、好ましくは３２〜１２０μｍである。裏面層（Ｃ）の厚みは、８〜８０μｍ、好ましくは１６〜８０μｍである。 As a specific example of the thickness of the multilayer substrate film for surface protective tape, when the total thickness of the multilayer substrate film for surface protective tape is 80 to 200 μm, the thickness of the surface layer (A) is 8 to 80 μm, preferably 16 to 80 μm. The thickness of the intermediate layer (B) is 16 to 160 μm, preferably 32 to 120 μm. The thickness of the back layer (C) is 8 to 80 μm, preferably 16 to 80 μm.
３層構成の表面保護テープ用多層基体フィルムは、上記の表面層（Ａ）裏面層（Ｃ）及び中間層（Ｂ）を構成する樹脂を多層共押出成形して製造する。具体的には、エチレン−酢酸ビニル共重合体からなる樹脂組成物を層（Ａ）用樹脂及び層（Ｃ）用樹脂、ポリエチレン系樹脂からなる樹脂組成物を層（Ｂ）用樹脂とし、層（Ａ）／層（Ｂ）／層（Ｃ）の順で多層共押出成形することにより製造される。 The multilayer substrate film for a surface protective tape having a three-layer structure is produced by multilayer coextrusion molding of the resin constituting the surface layer (A), the back surface layer (C) and the intermediate layer (B). Specifically, a resin composition made of an ethylene-vinyl acetate copolymer is used as a resin for layer (A) and a resin for layer (C), and a resin composition made of polyethylene resin is used as a resin for layer (B). It is manufactured by multilayer coextrusion molding in the order of (A) / layer (B) / layer (C).
上記した層（Ａ）用樹脂、層（Ｂ）用樹脂及び層（Ｃ）用樹脂をそれぞれこの順でバレル温度１６０〜２１０℃のスクリュー式押出機に供給し、ダイス温度１８０〜２３０℃で多層Ｔダイからフィルム状に押出し、これを１０〜７０℃の冷却ロ−ルに通しながら冷却して実質的に無延伸で引き取る。 The above-mentioned resin for layer (A), resin for layer (B) and resin for layer (C) are respectively supplied in this order to a screw type extruder having a barrel temperature of 160 to 210 ° C., and multilayered at a die temperature of 180 to 230 ° C. Extruded into a film from a T die, cooled while passing through a cooling roll at 10 to 70 ° C., and taken up substantially unstretched.
なお、引き取りの際に実質的に無延伸とするのは、表面保護テープ用多層基体フィルムの柔軟性を有効に確保するためである。この実質的に無延伸とは、無延伸、或いは、ダイシングフィルムの拡張に悪影響を与えない程度の僅少の延伸を含むものである。通常、フィルム引き取りの際に、たるみの生じない程度の引っ張りであればよい。 The reason why the film is substantially unstretched at the time of taking is to effectively ensure the flexibility of the multilayer substrate film for surface protective tape. This substantially non-stretching includes non-stretching or slight stretching that does not adversely affect the expansion of the dicing film. Usually, the film may be pulled to such an extent that no sagging occurs when the film is taken up.
以下に、本発明を、実施例及び比較例を用いてより詳細に説明するが、本発明はこの実施例に限定されるものではない。 Hereinafter, the present invention will be described in more detail using Examples and Comparative Examples, but the present invention is not limited to these Examples.
（実施例１）
分岐状低密度ポリエチレン（宇部丸善株式会社製 Ｌ７１９：密度０．９１９ｇ／ｃｍ３、ＭＦＲ＝５ｇ／１０分）を層（Ｂ）用樹脂とし、エチレン−酢酸ビニル共重合体（東ソー株式会社製 ４Ａ５４Ａ（密度０．９２ｇ／ｃｍ３、ＭＦＲ＝１０ｇ／１０分、酢酸ビニル含量１０重量％）を層（Ａ）及び層（Ｃ）用樹脂となるよう、それぞれの押出機に投入し、３層（Ａ／Ｂ／Ｃ）構成で各層の厚みが３２μｍ／５６μｍ／３２μｍとなるようにし、２３０℃のＴダイスから板状に押出し、表面温度が３０℃の引き取りロールにより冷却固化させ引き取った後、巻き取り機で巻き取って総厚１２０μｍのフィルムを得た。
得られたフィルムから採取した試料を用いて、裏面研削評価を行った。結果は表１に示した。
Example 1
Branched low-density polyethylene (L719, manufactured by Ube Maruzen Co., Ltd .: density 0.919 g / cm 3 , MFR = 5 g / 10 min) is used as the resin for the layer (B), and an ethylene-vinyl acetate copolymer (4A54A manufactured by Tosoh Corporation). (Density 0.92 g / cm 3 , MFR = 10 g / 10 min, vinyl acetate content 10% by weight) was introduced into each extruder to be a resin for layer (A) and layer (C), and three layers ( (A / B / C) The thickness of each layer is set to 32 μm / 56 μm / 32 μm in the configuration, extruded from a 230 ° C. T die into a plate shape, cooled and solidified by a take-up roll having a surface temperature of 30 ° C., and then wound. A film having a total thickness of 120 μm was obtained by winding with a take-up machine.
Back surface grinding evaluation was performed using a sample collected from the obtained film. The results are shown in Table 1.
（実施例２）
層（Ａ）及び層（Ｃ）用樹脂として、エチレン−酢酸ビニル共重合体（東ソー株式会社製 ０６Ａ５１Ａ（密度０．９３５ｇ／ｃｍ３、ＭＦＲ＝８ｇ／１０分、酢酸ビニル含量１５重量％）を用いた以外は実施例１と同様にしてフィルムを得た。
得られたフィルムから採取した試料を用いて、裏面研削評価を行った。結果は表１に示した。
(Example 2)
As the resin for the layer (A) and the layer (C), an ethylene-vinyl acetate copolymer (06A51A manufactured by Tosoh Corporation, density 0.935 g / cm3, MFR = 8 g / 10 minutes, vinyl acetate content 15% by weight) is used. A film was obtained in the same manner as in Example 1 except that.
Back surface grinding evaluation was performed using a sample collected from the obtained film. The results are shown in Table 1.
（比較例１）
分岐状低密度ポリエチレン（宇部丸善株式会社製 Ｆ５２２Ｎ：密度０．９２２ｇ／ｃｍ３、ＭＦＲ＝５ｇ／１０分）を層（Ｂ）用樹脂とした以外は実施例１と同様にしてフィルムを得た。
得られたフィルムから採取した試料を用いて、裏面研削評価を行った。結果は表１に示した。
(Comparative Example 1)
A film was obtained in the same manner as in Example 1 except that the branched low-density polyethylene (F522N manufactured by Ube Maruzen Co., Ltd .: density 0.922 g / cm 3 , MFR = 5 g / 10 min) was used as the resin for the layer (B). .
Back surface grinding evaluation was performed using a sample collected from the obtained film. The results are shown in Table 1.
（比較例２）
分岐状低密度ポリエチレン（宇部丸善株式会社製 Ｆ５２２Ｎ：密度０．９２２ｇ／ｃｍ３、ＭＦＲ＝５ｇ／１０分）を層（Ｂ）用樹脂とし、エチレンーメタクリル酸メチル共重合体（住友化学株式会社製 ＷＤ２０３−１（密度０．９２ｇ／ｃｍ３、ＭＦＲ＝２ｇ／１０分、メタクリル酸メチル含量５重量％）を層（Ａ）及び層（Ｃ）用樹脂となるよう、それぞれの押出機に投入し、３層（Ａ／Ｂ／Ｃ）構成で各層の厚みが３２μｍ／５６μｍ／３２μｍとなるようにした以外は実施例１と同様と同様にしてフィルムを得た。
得られたフィルムから採取した試料を用いて、裏面研削評価を行った。結果は表１に示した。
(Comparative Example 2)
Branched low density polyethylene (F522N manufactured by Ube Maruzen Co., Ltd .: density 0.922 g / cm 3 , MFR = 5 g / 10 min) is used as a resin for the layer (B), and ethylene-methyl methacrylate copolymer (Sumitomo Chemical Co., Ltd.) WD203-1 (density 0.92 g / cm 3 , MFR = 2 g / 10 min, methyl methacrylate content 5% by weight) manufactured by WD 203-1 is charged into each extruder so as to be a resin for layer (A) and layer (C) A film was obtained in the same manner as in Example 1 except that the thickness of each layer was 32 μm / 56 μm / 32 μm in a three-layer (A / B / C) configuration.
Back surface grinding evaluation was performed using a sample collected from the obtained film. The results are shown in Table 1.
（比較例３）
分岐状低密度ポリエチレン（宇部丸善株式会社製 Ｆ５２２Ｎ：密度０．９２２ｇ／ｃｍ３、ＭＦＲ＝５ｇ／１０分）を層（Ｂ）用樹脂とし、分岐状低密度ポリエチレン（宇部丸善株式会社製 Ｚ３７２：密度０．９３４ｇ／ｃｍ３、ＭＦＲ＝５ｇ／１０分）を層（Ａ）及び層（Ｃ）用樹脂となるように、それぞれの押出機に投入し、３層（Ａ／Ｂ／Ｃ）構成で各層の厚みが３２μｍ／５６μｍ／３２μｍとなるようにした以外は実施例１と同様と同様にしてフィルムを得た。
得られたフィルムから採取した試料を用いて、裏面研削評価を行った。結果は表１に示した。
(Comparative Example 3)
Branched low density polyethylene (Ube Maruzen Co., Ltd. F522N: density 0.922 g / cm 3 , MFR = 5 g / 10 min) is used as the resin for the layer (B), and branched low density polyethylene (Ube Maruzen Co., Ltd. Z372: A density of 0.934 g / cm 3 and MFR = 5 g / 10 min) is put into each extruder so as to be a resin for the layer (A) and the layer (C), and a three-layer (A / B / C) configuration A film was obtained in the same manner as in Example 1 except that the thickness of each layer was 32 μm / 56 μm / 32 μm.
Back surface grinding evaluation was performed using a sample collected from the obtained film. The results are shown in Table 1.
裏面研削評価
実施例および比較例で得られたフィルムに粘着剤を塗布し、粘着テープとした後、シリコンミラーウェハ（直径８インチ、厚み７００μｍ）の表面に、ヒューグルエレクトロニクス社製テープ貼付装置（Model3250）を使用し貼り付けた。次いでディスコ社製グラインド装置（DFG−810）にて、厚みが１００μｍになるまで研削し、ウェハの破損やクラックの有無を確認した。目視にて破損やクラックが確認できない場合を「○」、確認できる場合を「×」とした。結果は表１に示した。
The film obtained in the back grinding evaluation example and the comparative example was coated with an adhesive to form an adhesive tape, and then a tape applying device (manufactured by Hugle Electronics Co., Ltd.) on the surface of a silicon mirror wafer (diameter 8 inches, thickness 700 μm). And pasted using Model 3250). Next, grinding was performed with a disco grinder (DFG-810) until the thickness reached 100 μm, and the presence or absence of damage or cracking of the wafer was confirmed. The case where damage or cracks could not be confirmed by visual observation was indicated as “◯”, and the case where it could be confirmed was indicated as “X”. The results are shown in Table 1.
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| JP2008003789A JP2009170478A (en) | 2008-01-11 | 2008-01-11 | Multilayer base film for surface protective tape |
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| Application Number | Priority Date | Filing Date | Title |
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| JP2008003789A JP2009170478A (en) | 2008-01-11 | 2008-01-11 | Multilayer base film for surface protective tape |
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| JP2009170478A true JP2009170478A (en) | 2009-07-30 |
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| JP2008003789A Pending JP2009170478A (en) | 2008-01-11 | 2008-01-11 | Multilayer base film for surface protective tape |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011089044A (en) * | 2009-10-23 | 2011-05-06 | Gunze Ltd | Surface protective film |
| WO2011129167A1 (en) * | 2010-04-13 | 2011-10-20 | 東レフィルム加工株式会社 | Surface protective film |
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| JPH09186121A (en) * | 1995-12-28 | 1997-07-15 | Mitsui Toatsu Chem Inc | Method for grinding back surface of semiconductor wafer |
| JP2000017239A (en) * | 1998-07-01 | 2000-01-18 | Mitsui Chemicals Inc | Adhesive film for grinding back of semiconductive wafer and method for grinding back of semiconductive wafer by use thereof |
| JP2002069396A (en) * | 2000-08-29 | 2002-03-08 | Mitsui Chemicals Inc | Adhesive film for protecting semiconductor wafer and method for processing back of semiconductor wafer using the same |
| JP2003309088A (en) * | 2002-04-15 | 2003-10-31 | Nitto Denko Corp | Protection sheet for processing semiconductor wafer and method for using the same |
| JP2005297247A (en) * | 2004-04-07 | 2005-10-27 | Sekisui Film Kk | Substrate for pressure-sensitive adhesive tape and pressure-sensitive adhesive sheet |
| JP2007280976A (en) * | 2006-04-03 | 2007-10-25 | Gunze Ltd | Base film for surface protection tape used for grinding rear face of semiconductor wafer |
| JP4054113B2 (en) * | 1998-06-25 | 2008-02-27 | 三井化学株式会社 | Adhesive film for semiconductor wafer back grinding and semiconductor wafer back grinding method using the same |
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| JPH09186121A (en) * | 1995-12-28 | 1997-07-15 | Mitsui Toatsu Chem Inc | Method for grinding back surface of semiconductor wafer |
| JP4054113B2 (en) * | 1998-06-25 | 2008-02-27 | 三井化学株式会社 | Adhesive film for semiconductor wafer back grinding and semiconductor wafer back grinding method using the same |
| JP2000017239A (en) * | 1998-07-01 | 2000-01-18 | Mitsui Chemicals Inc | Adhesive film for grinding back of semiconductive wafer and method for grinding back of semiconductive wafer by use thereof |
| JP2002069396A (en) * | 2000-08-29 | 2002-03-08 | Mitsui Chemicals Inc | Adhesive film for protecting semiconductor wafer and method for processing back of semiconductor wafer using the same |
| JP2003309088A (en) * | 2002-04-15 | 2003-10-31 | Nitto Denko Corp | Protection sheet for processing semiconductor wafer and method for using the same |
| JP2005297247A (en) * | 2004-04-07 | 2005-10-27 | Sekisui Film Kk | Substrate for pressure-sensitive adhesive tape and pressure-sensitive adhesive sheet |
| JP2007280976A (en) * | 2006-04-03 | 2007-10-25 | Gunze Ltd | Base film for surface protection tape used for grinding rear face of semiconductor wafer |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011089044A (en) * | 2009-10-23 | 2011-05-06 | Gunze Ltd | Surface protective film |
| WO2011129167A1 (en) * | 2010-04-13 | 2011-10-20 | 東レフィルム加工株式会社 | Surface protective film |
| CN102844393A (en) * | 2010-04-13 | 2012-12-26 | 东丽薄膜先端加工股份有限公司 | Surface protective film |
| US20130052418A1 (en) * | 2010-04-13 | 2013-02-28 | Toray Advanced Film Co., Ltd. | Surface protective film |
| JP5761571B2 (en) * | 2010-04-13 | 2015-08-12 | 東レフィルム加工株式会社 | Surface protection film |
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