KR101948374B1 - Dicing film - Google Patents

Dicing film Download PDF

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KR101948374B1
KR101948374B1 KR1020147034758A KR20147034758A KR101948374B1 KR 101948374 B1 KR101948374 B1 KR 101948374B1 KR 1020147034758 A KR1020147034758 A KR 1020147034758A KR 20147034758 A KR20147034758 A KR 20147034758A KR 101948374 B1 KR101948374 B1 KR 101948374B1
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dicing
layer
film
dicing film
substrate
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KR20150058100A (en
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나오야 오다
요시노리 나가오
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스미또모 베이크라이트 가부시키가이샤
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836Wafer tapes, e.g. grinding or dicing support tapes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/20Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22Plastics; Metallised plastics
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00Additional features of adhesives in the form of films or foils
    • C09J2301/30Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2421/00Presence of unspecified rubber
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2433/00Presence of (meth)acrylic polymer
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2483/00Presence of polysiloxane
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H01L2221/68336Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Adhesive Tapes (AREA)
  • Dicing (AREA)
  • Laminated Bodies (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)

Abstract

본 발명의 목적은 반도체 제조시의 다이싱 공정에 있어서 스크레이프나 기재 턱수염의 발생이 적고, 또 매우 적합한 강도 및 양호한 외관을 가지는 다이싱 필름을 제공하는 것에 있고, 기재층(1)과 점착층(2)을 가지는 것이고, 기재층(1)의 80℃에 있어서의 파단신도가 750% 이하인 것을 특징으로 하는 다이싱 필름을 제공한다.It is an object of the present invention to provide a dicing film having less scraping and substrate bearding in a dicing step in semiconductor manufacturing and having a very suitable strength and a good appearance, (2), and the elongation at break of the base layer (1) at 80 DEG C is 750% or less.

Description

다이싱 필름{DICING FILM}Dicing Film {DICING FILM}

본 발명은 다이싱 필름에 관한 것이다.The present invention relates to a dicing film.

반도체 장치를 제조하는 공정에 있어서, 반도체 웨이퍼나 패키지 등의 반도체 부재를 절단할 때에 다이싱 필름이 이용되고 있다. 다이싱 필름이란 반도체 부재를 첩부하고, 다이싱(절단, 개편화(個片化))하고, 또한 당해 다이싱 필름을 익스팬딩(expanding) 등 하고, 또한 상기 반도체 웨이퍼 등을 픽업(pick up)하기 위해 이용되는 것이다.In the process of manufacturing a semiconductor device, a dicing film is used for cutting a semiconductor member such as a semiconductor wafer or a package. The dicing film is obtained by sticking a semiconductor member, dicing (cutting, singulating) the dicing film, expanding the dicing film, picking up the semiconductor wafer or the like, .

일반적으로 다이싱 필름은 기재 필름과 점착층으로 구성되어 있다. 종래, 기재 필름으로서는 폴리염화비닐(PVC) 수지 필름이 많이 이용되고 있었다. 그렇지만, PVC 수지 필름에 함유되는 가소제의 부착에 의한 반도체 부재의 오염 방지나 환경 문제에 대한 의식의 고양으로, 최근에는 올레핀계 수지 및 에틸렌비닐알코올계 수지 및 에틸렌메타크릴산아크릴레이트계 수지 등의 비PVC 수지계 재료를 이용한 기재 필름이 개발되고 있다(예를 들면 특허문헌 1 참조).Generally, the dicing film is composed of a base film and an adhesive layer. Conventionally, a polyvinyl chloride (PVC) resin film has been widely used as a base film. However, due to the prevention of the contamination of the semiconductor member due to the adhesion of the plasticizer contained in the PVC resin film and the enhancement of the awareness of the environmental problem, in recent years, the olefin resin, the ethylene vinyl alcohol resin and the ethylene methacrylic acid acrylate resin A base film using a non-PVC resin material has been developed (see, for example, Patent Document 1).

또 근년, 반도체 부재의 소형화·박형화가 진행됨으로써, 다이싱 필름의 두께 정밀도에 불균일이 있는 경우, 다이싱 공정에 있어서 다이싱 블레이드(dicing blade)의 접촉 방법에 차이가 생기고 반도체 웨이퍼에 갈라짐이 발생하기 쉬워진다고 하는 문제를 발생시킨다. 또, 필름 두께 정밀도에 불균일이 있으면 반도체 부재의 잘리지 않은 부분이나 다이싱시의 스크레이프(scrape)나 기재 턱수염(기재 필름의 커트라인(cut line)으로부터 뻗어있는 턱수염상의 잘림 잔사)이 발생하여 반도체 디바이스에 부착한다고 하는 문제도 발생한다. 특히 웨이퍼의 칩 이빠짐을 개량하기 위해 다이싱 블레이드의 회전 속도를 올리면, 기재 턱수염 발생의 문제가 현저하게 나타난다. 또, 반도체 부재를 첩부하여 다이싱한 후, 반도체 부재의 간격을 넓히기 위해 다이싱 필름의 익스팬딩을 행하지만, 기재에 충분한 인성이 없으면 익스팬딩시에 다이싱 필름이 파단한다고 하는 문제도 발생한다. 그 때문에 다이싱시에 기재 턱수염를 억제할 수가 있고, 또한 익스팬딩시에 기재가 파단하지 않는 다이싱 필름이 요구되고 있다.Further, in recent years, when the thickness and accuracy of the dicing film are not uniform due to the progress of miniaturization and thinning of the semiconductor member, there is a difference in the contact method of the dicing blade in the dicing step, And it becomes easy to be generated. If the film thickness precision is not uniform, a non-cut portion of the semiconductor member or a scrape during dicing or base beard (a cut-off residue on the beard extending from the cut line of the base film) is generated, As shown in Fig. Particularly, if the rotational speed of the dicing blade is increased to improve the chip load on the wafer, the problem of substrate beard formation is conspicuous. Further, after the semiconductor member is attached and diced, expansion of the dicing film is performed in order to widen the interval of the semiconductor members. However, if there is not enough toughness in the base material, there arises a problem that the dicing film is broken at the time of expansion . Therefore, there is a demand for a dicing film which can suppress the substrate beard at the time of dicing and does not break the substrate at the time of expansion.

일본국 특허공개 2003-257893Japanese Patent Application Laid-Open No. 2003-257893

본 발명의 목적은 반도체 제조시의 다이싱 공정에 있어서 스크레이프나 기재 턱수염의 발생이 적고, 또 매우 적합한 익스팬딩성을 가지는 다이싱 필름을 제공하는 것에 있다.It is an object of the present invention to provide a dicing film having less scraping and substrate beard in the dicing step in semiconductor manufacturing and having a very favorable expandability.

이러한 목적은 하기 (1)~(5)에 기재된 본 발명에 의해 달성된다.This object is achieved by the present invention described in the following (1) to (5).

(1) 기재층과 점착층을 가지는 다이싱 필름으로서, 상기 기재층의 80℃에 있어서의 파단신도가 750% 이하이고, 상기 기재층의 23℃에 있어서의 파단신도가 200% 이상이며, 기재층을 구성하는 수지가 저밀도 폴리에틸렌 또는 폴리스티렌과, 고무 또는 엘라스토머의 혼합물인 것을 특징으로 하는 다이싱 필름.(1) A dicing film having a base layer and a pressure-sensitive adhesive layer, wherein the base layer has a breaking elongation at 80 DEG C of 750% or less, a breaking elongation of the base layer at 23 DEG C of 200% Wherein the resin constituting the layer is a mixture of low density polyethylene or polystyrene and rubber or elastomer.

(2) 상기 기재층의 두께가 50~250㎛인 상기 (1)에 기재된 다이싱 필름.(2) The dicing film according to (1), wherein the base layer has a thickness of 50 to 250 占 퐉.

(3) 상기 점착층이 고무계, 실리콘계, 아크릴계 점착제의 어느 하나 이상을 포함하는 것인 상기 (1)에 기재된 다이싱 필름.(3) The dicing film as described in (1) above, wherein the adhesive layer comprises at least one of rubber, silicone, and acrylic adhesive.

(4) 상기 아크릴계 점착제가 극성기를 가지는 것인 상기 (3)에 기재된 다이싱 필름.(4) The dicing film according to (3), wherein the acrylic pressure-sensitive adhesive has a polar group.

(5) 상기 점착층의 두께가 3~40㎛인 상기 (1) 내지 (4)의 어느 하나에 기재된 다이싱 필름.(5) The dicing film according to any one of (1) to (4), wherein the thickness of the adhesive layer is 3 to 40 탆.

삭제delete

본 발명에 의하면, 반도체 제조시의 다이싱 공정에 있어서 스크레이프나 기재 턱수염의 발생이 적고, 또 매우 적합한 익스팬딩성을 가지는 다이싱 필름을 제공할 수가 있다.According to the present invention, it is possible to provide a dicing film having less scraping and substrate beard in the dicing step in semiconductor manufacturing, and having a very favorable expandability.

도 1은 본 발명에 관한 다이싱 필름의 일례를 나타내는 개략 단면도이다.1 is a schematic sectional view showing an example of a dicing film according to the present invention.

본 발명의 다이싱 필름의 일례를 도를 참조하면서 상세하게 설명한다.An example of the dicing film of the present invention will be described in detail with reference to the drawings.

본 발명에 관한 다이싱 필름(10)은 도 1에 예시하듯이 기재층(1)과 점착층(2)을 가진다.The dicing film 10 according to the present invention has a base layer 1 and an adhesive layer 2 as shown in Fig.

이하, 다이싱 필름(10)의 각 부의 구성에 대해 순차 설명한다.The constitution of each part of the dicing film 10 will be sequentially described below.

<기재층(1)>≪ Base layer (1) >

기재층(1)은 웨이퍼의 반송시에 안정시키기 위한, 그리고 다이싱시에 점착제층의 하층까지 벤 자국을 넣기 위한, 또 다이싱 후의 칩 간격을 넓히기 위한 것이다.The base layer (1) is for stabilizing the wafer during transportation, for inserting a bench mark to the lower layer of the pressure-sensitive adhesive layer at the time of dicing, and for widening the chip interval after dicing.

기재층(1)은 80℃에 있어서의 파단신도가 750% 이하이다.The substrate layer (1) has a breaking elongation at 80 DEG C of 750% or less.

여기서, 다이싱 필름은 다이싱 공정에 있어서, 다이싱 블레이드의 마찰열에 의해 다이싱 블레이드의 접촉부는 80℃ 이상의 고온에 노출된다. 이러한 고온 상태에 있어서는 기재층이 유연하게 신장하기 쉬운 상태로 되어, 스크레이프가 다이싱 블레이드의 회전에 인장되어 신장하는 것이 다이싱 공정에서 기재 턱수염이 발생하는 한 요인이다.Here, in the dicing step of the dicing film, the contact portion of the dicing blade is exposed to a high temperature of 80 占 폚 or more due to the frictional heat of the dicing blade. In such a high-temperature state, the substrate layer is in a state in which it can flexibly stretch, and the scrape is stretched due to the rotation of the dicing blade and is stretched. This is one of the factors that the substrate beard is generated in the dicing step.

이 점, 본 발명의 기재층(1)은, 80℃에 있어서의 파단신도가 750% 이하인 것에 의해, 고온 상태에 있어서 유연하게 신장하기 쉬운 상태로는 되기 어렵기 때문에, 다이싱 공정에 있어서의 턱수염의 발생을 억제할 수가 있는 것이다.In this respect, since the substrate layer (1) of the present invention is not likely to be elongated in a flexible state at a high temperature because the elongation at break at 80 DEG C is 750% or less, The occurrence of beard can be suppressed.

기재층(1)의 80℃에 있어서의 파단신도는 750% 이하이면 특히 한정되지 않지만, 600% 이하인 것이 바람직하고, 400% 이하인 것이 보다 바람직하다.The elongation at break of the base layer 1 at 80 캜 is not particularly limited as long as it is 750% or less, but is preferably 600% or less, more preferably 400% or less.

또, 기재층(1)은 23℃에 있어서의 파단신도가 50% 이상인 것이 바람직하다.It is preferable that the substrate layer (1) has a elongation at break at 23 캜 of 50% or more.

다이싱 필름은 기재에 충분한 인성이 없으면 익스팬딩시에 기재층이 파단한다고 하는 문제가 발생하는 경우가 있다. 이에 반해 본 발명의 다이싱 필름에서는 익스팬딩 공정이 행해지는 상온 부근의 23℃에 있어서의 기재층(1)의 파단신도가 50% 이상인 것에 의해, 익스팬딩시에 기재층(1)이 파단하기 어려운 것으로 된다.If the substrate has insufficient toughness, there may be a problem that the substrate layer is broken at the time of expansion. On the other hand, in the dicing film of the present invention, since the elongation at break of the substrate layer 1 at 23 ° C in the vicinity of ordinary temperature where the expansing process is performed is 50% or more, the substrate layer 1 is broken It becomes difficult.

기재층(1)의 23℃에 있어서의 파단신도는 50% 이상이면 특히 한정되지 않지만, 100% 이상인 것이 바람직하고, 200% 이상인 것이 보다 바람직하다.The elongation at break of the base layer 1 at 23 캜 is not particularly limited as long as it is 50% or more, but is preferably 100% or more, and more preferably 200% or more.

이에 의해 익스팬딩시의 다이싱 필름(10)의 파단을 충분히 방지할 수가 있다.This makes it possible to sufficiently prevent the dicing film 10 from being broken at the time of expansion.

또, 다이싱 블레이드의 마찰열이 80℃를 초과하는 경우를 고려하면, 기재층(1)은 80℃를 초과하는 온도에 있어서도 낮은 파단신도를 가지는 것이 바람직하고, 예를 들면 100℃에 있어서의 파단신도가 600% 이하인 것이 바람직하고, 400% 이하인 것이 보다 바람직하다.In consideration of the case where the frictional heat of the dicing blade exceeds 80 DEG C, it is preferable that the substrate layer 1 has a low elongation at break even at a temperature exceeding 80 DEG C, and for example, The elongation is preferably 600% or less, more preferably 400% or less.

이에 의해 다이싱 공정 있어서의 기재 턱수염의 발생을 더 억제할 수가 있다.This makes it possible to further suppress the occurrence of substrate beard in the dicing step.

기재층(1)을 구성하는 수지로서는 특히 한정되지 않지만, 예를 들면, 저밀도 폴리에틸렌, 폴리스티렌, 폴리스티렌과 고무를 들 수 있다.The resin constituting the substrate layer (1) is not particularly limited, and examples thereof include low density polyethylene, polystyrene, polystyrene and rubber.

그중에서도 저밀도 폴리에틸렌이나 폴리스티렌과 고무나 엘라스토머의 혼합물이 바람직하다.Among them, a mixture of low density polyethylene or polystyrene and rubber or elastomer is preferable.

기재층(1)을 구성하는 수지가 저밀도 폴리에틸렌이나 폴리스티렌과 고무나 엘라스토머의 혼합물인 것에 의해, 기재층(1)의 23℃에 있어서의 파단신도를 상기 하한치 이상으로 하는 것이 용이하게 되어 양호한 익스팬딩성을 발휘할 수가 있다.Since the resin constituting the substrate layer 1 is a mixture of low density polyethylene or polystyrene and a rubber or an elastomer, it is easy to make the base layer 1 have a breaking elongation at 23 ° C or higher as described above, It is possible to exhibit a ding.

또, 기재층(1)의 80℃ 및 100℃에 있어서의 파단신도를 상기 상한치 이하로 하는 것이 용이하게 되어 다이싱시의 턱수염의 발생을 보다 억제할 수가 있다.Also, it is easy to make the elongation at break of the base layer 1 at 80 DEG C and 100 DEG C to be not more than the above-mentioned upper limit value, so that occurrence of beard at the time of dicing can be further suppressed.

기재층(1)의 두께는 특히 한정되지 않지만, 50~250㎛인 것이 바람직하고, 70~200㎛인 것이 보다 바람직하고, 80~150㎛인 것이 한층 더 바람직하다.The thickness of the substrate layer 1 is not particularly limited, but is preferably 50 to 250 占 퐉, more preferably 70 to 200 占 퐉, and even more preferably 80 to 150 占 퐉.

기재층(1)의 두께가 상기 하한치 이상인 것에 의해, 익스팬딩시에 기재층(1)이 보다 파단하기 어려운 것으로 되고, 기재층(1)의 두께가 상기 상한치 이하인 것에 의해, 다이싱시의 턱수염의 발생을 보다 억제할 수가 있다.When the thickness of the base layer 1 is not less than the above lower limit value, the base layer 1 is less likely to break at the time of expansion, and the thickness of the base layer 1 is not more than the upper limit, Can be further suppressed.

또 기재층(1)은 본 발명의 효과를 손상시키지 않는 범위에서 목적에 맞추어 각종 수지나 첨가제 등을 첨가할 수가 있다. 예를 들면, 대전방지성을 부여하기 위해 폴리에테르/폴리올레핀 블록 폴리머나 폴리에테르에스터아미드 블록 폴리머 등의 고분자형 대전방지제나 카본블랙 등이 첨가 가능한 재료로서 들어진다. 또한, 대전방지 효과를 부여하는 경우에 있어서는 올레핀계 수지와의 상용성이라고 하는 관점에서는 폴리에테르/폴리올레핀 공중합체를 이용한 이온 전도형 대전방지제가 바람직하다.The base layer (1) can be added with various resins, additives and the like in accordance with the purpose, without impairing the effect of the present invention. For example, a polymeric antistatic agent such as a polyether / polyolefin block polymer or a polyetherester amide block polymer or a carbon black can be added as an additive to impart antistatic properties. In the case of imparting an antistatic effect, an ionic conduction type antistatic agent using a polyether / polyolefin copolymer is preferable from the viewpoint of compatibility with an olefin resin.

(점착층(2))(Adhesive layer 2)

도 1에 예시하듯이 본 발명에 관한 다이싱 필름(10)의 기재층(1)의 적어도 일면에는 점착층(2)이 설치된다. 점착층(2)은 다이싱 필름(10)에 피착체를 보지(保持)하는 역할을 가진다.As shown in Fig. 1, the adhesive layer 2 is provided on at least one surface of the base layer 1 of the dicing film 10 according to the present invention. The adhesive layer 2 has a role of holding (holding) the adherend on the dicing film 10.

점착층(2)에 이용되는 수지 조성물로서는 고무계 점착제, 실리콘계 점착제, 아크릴계 점착제, UV 경화성 우레탄아크릴레이트 수지, 이소시아네이트계 가교제 등을 들 수 있다. 이들 중에서도 반도체 부재 마운트, 단재(端材) 날아감 및 치핑(chipping)을 억제하기 위해서는 고무계 점착제, 실리콘계 점착제, 아크릴계 점착제의 어느 하나 이상을 포함하는 것인 것이 바람직하다.Examples of the resin composition used for the adhesive layer 2 include a rubber-based pressure-sensitive adhesive, a silicone-based pressure-sensitive adhesive, an acrylic pressure-sensitive adhesive, a UV-curable urethane acrylate resin, and an isocyanate-based crosslinking agent. Among these, it is preferable that at least one of a rubber-based adhesive, a silicone-based adhesive, and an acrylic-based adhesive is included in order to suppress the semiconductor member mount, edge material flying and chipping.

또, 상기 아크릴계 점착제는 극성기를 가지는 것인 것이 보다 바람직하고, 극성기를 가지는 아크릴계 점착제로서는 카복실기 함유 아크릴산부틸 등을 들 수 있다.The acrylic pressure sensitive adhesive preferably has a polar group, and the acrylic pressure sensitive adhesive having a polar group includes a carboxyl group containing butyl acrylate.

점착층(2)이 극성기를 가지는 아크릴계 점착제를 포함함으로써, 반도체 부재의 마운트, 단재 날아감 및 치핑의 억제가 특히 매우 적합한 것으로 된다.By including the acrylic pressure sensitive adhesive having the polar group, the pressure sensitive adhesive layer 2 becomes particularly suitable to suppress the mounting, the stepped flying, and the chipping of the semiconductor member.

점착층(2)의 두께는 특히 한정되지 않지만, 3㎛ 이상 40㎛ 이하인 것이 바람직하고, 다이싱 필름의 반도체 웨이퍼 다이싱용에서는 5㎛ 이상 20㎛ 이하인 것이 바람직하다.Although the thickness of the adhesive layer 2 is not particularly limited, it is preferably 3 m or more and 40 m or less, and it is preferably 5 m or more and 20 m or less for the semiconductor wafer dicing of the dicing film.

또, 패키지 등의 특수 부재 다이싱용으로서는 10㎛ 이상 30㎛ 이하인 것이 바람직하다. 상기 범위 하한치 이상으로 함으로써 피착체의 보지력이 뛰어나고, 상기 범위 상한치 이하로 함으로써 다이싱시의 가공성이 뛰어나다.In addition, for dicing of a special member such as a package, it is preferable that the thickness is 10 μm or more and 30 μm or less. By keeping the above-mentioned range lower than the lower limit, the holding force of the adherend is excellent, and when it is lower than the upper limit of the above range, the workability at the time of dicing is excellent.

다이싱 필름(10)에 있어서, 기재층(1)을 구성하는 수지와 점착층(2)을 구성하는 수지의 조합은 특히 한정되지 않지만, 예를 들면, 기재층(1)을 구성하는 수지가 저밀도 폴리에틸렌이나 폴리스티렌과, 고무나 엘라스토머의 혼합물일 때, 점착층(2)을 구성하는 수지가 고무계 점착제, 실리콘계 점착제, 아크릴계 점착제, UV 경화성 우레탄아크릴레이트 수지, 이소시아네이트계 가교제 등인 것이 바람직하고, 그중에서도 고무계 점착제, 실리콘계 점착제, 아크릴계 점착제의 어느 하나 이상을 포함하는 것인 것이 보다 바람직하고, 또한 그중에서도 극성기를 가지는 아크릴계 점착제를 포함하는 것이 한층 더 바람직하다.In the dicing film 10, the combination of the resin constituting the base layer 1 and the resin constituting the adhesive layer 2 is not particularly limited. For example, the resin constituting the base layer 1 A silicone adhesive, an acrylic adhesive, a UV-curable urethane acrylate resin, an isocyanate-based crosslinking agent, and the like are preferable when the low-density polyethylene or the polystyrene and the rubber or the elastomer are a mixture, It is more preferable to include at least one of a pressure-sensitive adhesive, a silicone-based pressure-sensitive adhesive, and an acrylic pressure-sensitive adhesive, and more preferably an acrylic pressure-sensitive adhesive having a polar group.

이에 의해 다이싱시의 턱수염의 발생을 한층 더 억제할 수가 있음과 아울러, 반도체 부재의 마운트, 단재 날아감 및 치핑의 억제가 더 적합한 것으로 된다.As a result, the generation of beard at the time of dicing can be further suppressed, and the mounting of the semiconductor member, the fluttering of the edge member, and the suppression of chipping can be more suitable.

<다이싱 필름의 제조 방법의 일례><Example of Production Method of Dicing Film>

본 발명에 관한 다이싱 필름(10)의 점착층(2)은 기재층(1) 또는 기재층(1)을 포함하는 수지 필름에 대해, 점착층(2)으로서 이용되는 수지를 적당히 용제에 용해 또는 분산시켜 도포액으로 하고, 롤 코팅이나 그라비어 코팅 등의 공지의 코팅법에 의해 도포하고 건조시킴으로써 형성된다.The adhesive layer 2 of the dicing film 10 according to the present invention can be obtained by dissolving a resin used as the adhesive layer 2 in a solvent appropriately to a resin film containing the base layer 1 or the base layer 1 Or dispersing it into a coating liquid, applying it by a known coating method such as roll coating or gravure coating, and drying it.

본 발명에 관한 다이싱 필름(10)에는 본 발명의 효과를 손상시키지 않는 범위에서 목적에 따라 다른 수지층을 설치할 수가 있다.In the dicing film 10 according to the present invention, other resin layers may be provided depending on the purpose, without impairing the effects of the present invention.

실시예Example

본 발명을 실시예에 의해 더 상세하게 설명하지만, 이것은 단순한 예시이고 본 발명은 이것에 의해 한정되는 것은 아니다.The present invention will be described in more detail by way of examples, which are merely examples and the present invention is not limited thereto.

(실시예 1)(Example 1)

<다이싱 테이프의 제작><Production of dicing tape>

기재를 구성하는 재료로서 저밀도 폴리에틸렌 F522N(우베마루젠폴리에틸렌제)을 준비하고, Φ50mm 압출기(L/D=25, 유니멜트 핀 스크류, 스크류 압축비=2.9), 300mm 폭의 코트행거다이(coat hanger die)(립 간극=0.5mm), 압출 온도=220℃(스크류 선단)의 조건으로 압출 제막하여 두께 100㎛의 시트를 얻었다. 그 후 얻어진 시트의 점착제 도포면에 코로나 처리를 하였다.(L / D = 25, unimelt pin screw, screw compression ratio = 2.9), and a coat hanger die of 300 mm width were prepared as a material constituting the base material, and a low density polyethylene F522N (made by Ube Maruzen Polyethylene) ) (Lip gap = 0.5 mm), extrusion temperature = 220 占 폚 (screw tip), to obtain a sheet having a thickness of 100 占 퐉. Thereafter, a corona treatment was applied to the adhesive coated surface of the obtained sheet.

점착층의 베이스 폴리머로서, 아크릴산 2-에틸헥실 30중량부와, 초산비닐 70중량부와, 메타크릴산 2-히드록시에틸 3중량부를 공중합시켜 얻어진 공중합체(중량평균분자량은 300,000)를 42중량% 이용하였다.A copolymer (weight average molecular weight: 300,000) obtained by copolymerizing 30 parts by weight of 2-ethylhexyl acrylate, 70 parts by weight of vinyl acetate and 3 parts by weight of 2-hydroxyethyl methacrylate was added as a base polymer of the adhesive layer to 42 weight %.

점착층의 경화 성분으로서 중량평균분자량이 5,000, 중합성 관능기가 4인 우레탄아크릴레이트를 47중량% 준비하였다.47% by weight of a urethane acrylate having a weight average molecular weight of 5,000 and a polymerizable functional group of 4 was prepared as a curing component of the adhesive layer.

점착층의 광중합 개시제로서 2, 2-디메톡시-1, 2-디페닐에탄-1-온(상품명 「이르가큐어 651」)을 3중량% 준비하였다. 점착층의 이소시아네이트계 가교제로서 폴리이소시아네이트 화합물(상품명 「코로네이트 L」)을 8중량% 준비하였다.3% by weight of 2,2-dimethoxy-1,2-diphenylethane-1-one (trade name: Irgacure 651) was prepared as a photopolymerization initiator in the adhesive layer. 8% by weight of a polyisocyanate compound (trade name &quot; Coronate L &quot;) as an isocyanate-based cross-linking agent in the adhesive layer was prepared.

상기 점착층의 베이스 폴리머와, 경화 성분과, 광중합 개시제와, 가교제와, 그 합계의 2배량의 초산에틸을 혼합하여 수지 용액을 제조하였다. 이 수지 용액을 건조 후의 점착층의 두께가 10㎛로 되도록 하여 기재에 바코트(bar coat) 도포한 후, 80℃에서 1분간 건조시켜 소망의 다이싱 테이프를 얻었다.A resin solution was prepared by mixing the base polymer, the curing component, the photopolymerization initiator, the crosslinking agent, and ethyl acetate in a total amount of two times the amount of the ethyl acetate. The resin solution was applied to a base material such that the thickness of the pressure-sensitive adhesive layer after drying was 10 占 퐉, and then dried at 80 占 폚 for 1 minute to obtain a desired dicing tape.

(실시예 2) HIPS/엘라스토머 혼합(Example 2) HIPS / elastomer blend

기재를 구성하는 재료로서 스티렌-메타크릴산메틸-아크릴산부틸 공중합물과, 스티렌-부타디엔 공중합물 SX100(PS저팬주식회사제) 60phr을 하이브라 7125 40phr(주식회사 쿠라레제)에 의해 드라이블렌드한 후 두께 150㎛의 시트를 얻은 외에는 실시예 1과 마찬가지로 하여 다이싱 테이프를 얻었다.A styrene-methyl methacrylate-butyl acrylate copolymer and a styrene-butadiene copolymer SX100 (manufactured by PS Japan Co., Ltd.) (60 phr) were dry-blended by 40 phr of Hiabra 7125 (Kuraray Co., Ltd.) A dicing tape was obtained in the same manner as in Example 1 except that a sheet was obtained.

(실시예 3) LDPE/HDPE의 적층(Example 3) Lamination of LDPE / HDPE

기재로서 저밀도 폴리에틸렌 F522N(우베마루젠폴리에틸렌제)층(50μ 두께)과 고밀도 폴리에틸렌 수지 산텍 B161(아사히화성주식회사제)층(50μ 두께)이 적층된 100μ의 시트를 사용한 외에는 실시예 1과 마찬가지로 하여 다이싱 테이프를 얻었다.Except that a 100 mu m sheet in which a low-density polyethylene F522N (made by Ube Maruzen polyethylene) layer (50 mu m thick) and a high-density polyethylene resin SANTEC B161 (made by Asahi Kasei Corporation) Singing tape was obtained.

(실시예 4)(Example 4)

기재를 구성하는 재료로서 스티렌-부타디엔 공중합물 SX100(PS저팬주식회사제) 100중량부를 사용한 외에는 실시예 1과 마찬가지로 하여 다이싱 테이프를 얻었다.A dicing tape was obtained in the same manner as in Example 1 except that 100 parts by weight of a styrene-butadiene copolymer SX100 (manufactured by PS Japan Co., Ltd.) was used as a material constituting the substrate.

(비교예 1) (Comparative Example 1)

기재를 구성하는 재료로서 카복실기를 가지는 화합물을 양이온으로 가교한 아이오노머 수지 하이밀란 1855(미츠이듀퐁제) 100중량부를 사용한 외에는 실시예 1과 마찬가지로 하여 다이싱 테이프를 얻었다.A dicing tape was obtained in the same manner as in Example 1 except that 100 parts by weight of an ionomer resin HYMILAN 1855 (manufactured by Mitsui DuPont) crosslinked with a cation-containing compound as a material constituting the base material.

(비교예 2)(Comparative Example 2)

기재를 구성하는 재료로서 고밀도 폴리에틸렌 수지 산텍 B161(아사히화성주식회사제) 100중량부를 사용한 외에는 실시예 1과 마찬가지로 하여 다이싱 테이프를 얻었다.A dicing tape was obtained in the same manner as in Example 1 except that 100 parts by weight of a high-density polyethylene resin SANTEC B161 (manufactured by Asahi Kasei Corporation) was used as a material constituting the substrate.

(비교예 3)(Comparative Example 3)

기재를 구성하는 재료로서 직쇄상 저밀도 폴리에틸렌 수지 모어텍 0248Z(주식회사 프라임폴리머제) 100중량부를 사용한 외에는 실시예 1과 마찬가지로 하여 다이싱 테이프를 얻었다.A dicing tape was obtained in the same manner as in Example 1 except that 100 parts by weight of a linear low-density polyethylene resin Mohrtech 0248Z (manufactured by Prime Polymer Co., Ltd.) was used as a material constituting the substrate.

다음에 얻어진 다이싱 테이프의 평가를 이하와 같이 행하였다. 얻어진 평가 결과는 표 1에 나타낸다.The evaluation of the dicing tape thus obtained was carried out as follows. The evaluation results obtained are shown in Table 1.

<평가 시험>&Lt; Evaluation test &gt;

(1) 인장 시험(1) Tensile test

(1-1) 23℃ 환경하에서의 인장신도를 이하의 방법으로 측정하였다.  (1-1) Tensile elongation at 23 캜 was measured by the following method.

플라스틱-인장 특성의 시험 방법 JISK7127 준거.  Plastics - Test method for tensile properties according to JIS K7127.

(1-2) 80℃ 환경하에서의 인장신도를 이하의 방법으로 측정하였다.  (1-2) Tensile elongation at 80 캜 was measured by the following method.

6mm 폭, 50mm 길이의 스트립(strip)을 준비하여, MD 방향으로 200mm/min로 인장하고 파단할 때까지 인장하여 파단신도를 구하였다.  A strip having a width of 6 mm and a length of 50 mm was prepared, stretched in the MD direction at 200 mm / min, and stretched until it was broken.

(2) 다이싱 후의 기재 부스러기 평가(2) Evaluation of substrate debris after dicing

제작한 다이싱 테이프에, 백그라인드 가공(디스코사제 DAG810)한 웨이퍼(두께 0.1mm)를 첩부하고, 하기 조건으로 다이싱을 행한 후, 칩을 제거하고 테이프 표면의 관찰을 행하여, 커트라인으로부터 나오는 길이 100μ 이상의 기재 부스러기의 수를 세었다.A wafer (thickness: 0.1 mm) which was back-grinded (DAG810 manufactured by DISCO Corporation) was attached to the dicing tape thus produced, and dicing was carried out under the following conditions. Thereafter, the chips were removed and the surface of the tape was observed. The number of substrate debris of 100 microns or more was counted.

◎: 0~5개◎: 0 to 5

○: 6-10개○: 6-10

×: 11개 이상X: 11 or more

<다이싱 조건><Dicing Condition>

다이서      「DAD―3350」, DISCO제DAI-3350 &quot;, manufactured by DISCO Co., Ltd.

블레이드     「ZH205O 27HEDD」, DISCO제Blade "ZH205O 27HEDD", made by DISCO

블레이드 회전수  30000rpm, 60000rpmBlade rotation speed 30000 rpm, 60000 rpm

커트 속도     50mm/secCutting speed 50mm / sec

벤 자국량 점착 시트 표면으로부터 30㎛Ben trace amount 30 mu m from the surface of the pressure-

커트 크기    10mm×10mmCut size 10mm × 10mm

블레이드 쿨러  2L/minBlade Cooler 2L / min

(3) 익스팬딩성(3) Exploding

5인치 미러(mirror) 웨이퍼를 테이프에 보지 고정하고, 다이싱쏘(dicing saw)(DISCO제 DAD3350)를 이용하여 스핀들 회전수 60,000rpm, 커팅 스피드50mm/min.로 10mm□의 칩 크기로 커트 후, UV 조사를 행하고, 익스팬더(expander)(휴글제)를 사용하여 20mm의 스트로크(stroke)로 10분간 익스팬딩을 행하여 칩 간격을 측정함으로써 평가하였다.A 5-inch mirror wafer was held on a tape, and the wafer was cut into a chip size of 10 mm square at a spindle speed of 60,000 rpm and a cutting speed of 50 mm / min using a dicing saw (DISCO DAD3350) UV irradiation was performed, and evaluation was carried out by exposing for 10 minutes using a 20 mm stroke using an expander (manufactured by Hewlett-Packard) to measure the chip interval.

<평가 기준><Evaluation Criteria>

◎: 칩 간격이 50㎛ 이상 벌어져 있는 것◎: chip spacing of 50 μm or more

○: 칩 간격이 30㎛ 이상 50㎛ 미만 벌어져 있는 것?: Chip spacing of 30 占 퐉 or more and less than 50 占 퐉

×: 칩 간격이 30㎛ 이상 벌어져 있지 않은 것X: chip spacing not more than 30 占 퐉

Figure 112014120371250-pct00001
Figure 112014120371250-pct00001

산업상 이용가능성Industrial availability

본 발명의 다이싱 필름은 다이싱시의 스크레이프나 기재 턱수염의 발생이 적고, 다이싱 필름으로서 매우 적합한 강도와 양호한 외관을 가지기 때문에 반도체 장치 제조의 다이싱 공정에 있어서 반도체 부재 고정용 필름으로서 매우 적합하게 이용할 수가 있다.Since the dicing film of the present invention has less scrape and substrate beard at the time of dicing and has a strength and a good appearance which are very suitable as a dicing film, And can be suitably used.

1···기재 필름
2···점착층
10···다이싱 필름
1 ... Base film
2 ... adhesive layer
10 ... dicing film

Claims (6)

기재층과 점착층을 가지는 다이싱 필름으로서,
상기 기재층의 80℃에 있어서의 파단신도가 750% 이하이고,
상기 기재층의 23℃에 있어서의 파단신도가 200% 이상이며,
상기 기재층을 구성하는 수지가 저밀도 폴리에틸렌 또는 폴리스티렌과, 고무 또는 엘라스토머의 혼합물인 것을 특징으로 하는 다이싱 필름.
A dicing film having a base layer and an adhesive layer,
The base layer has a breaking elongation at 750 deg. C of not more than 750%
Wherein the substrate layer has a breaking elongation at 200 ° C of at least 200%
Wherein the resin constituting the substrate layer is a mixture of low density polyethylene or polystyrene and rubber or elastomer.
제1항에 있어서,
상기 기재층의 두께가 50~250㎛인 것을 특징으로 하는 다이싱 필름.
The method according to claim 1,
Wherein the base layer has a thickness of 50 to 250 占 퐉.
제1항에 있어서,
상기 점착층이 고무계, 실리콘계, 아크릴계 점착제의 어느 하나 이상을 포함하는 것인 것을 특징으로 하는 다이싱 필름.
The method according to claim 1,
Wherein the pressure-sensitive adhesive layer comprises at least one of a rubber-based, silicone-based, and acrylic pressure-sensitive adhesive.
제3항에 있어서,
상기 아크릴계 점착제가 극성기를 가지는 것인 것을 특징으로 하는 다이싱 필름.
The method of claim 3,
Wherein the acrylic pressure-sensitive adhesive has a polar group.
제1항 내지 제4항 중 어느 한 항에 있어서,
상기 점착층의 두께가 3~40㎛인 것을 특징으로 하는 다이싱 필름.
5. The method according to any one of claims 1 to 4,
Wherein the thickness of the adhesive layer is 3 to 40 占 퐉.
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