JP2008244377A - Sheet and adhesive tape for processing semiconductor wafer - Google Patents

Sheet and adhesive tape for processing semiconductor wafer Download PDF

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Publication number
JP2008244377A
JP2008244377A JP2007086303A JP2007086303A JP2008244377A JP 2008244377 A JP2008244377 A JP 2008244377A JP 2007086303 A JP2007086303 A JP 2007086303A JP 2007086303 A JP2007086303 A JP 2007086303A JP 2008244377 A JP2008244377 A JP 2008244377A
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sheet
adhesive tape
semiconductor wafer
weight
processing
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JP5056112B2 (en
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Yusuke Ishida
祐輔 石田
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Sumitomo Bakelite Co Ltd
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Sumitomo Bakelite Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836Wafer tapes, e.g. grinding or dicing support tapes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H01L2221/68336Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing

Abstract

<P>PROBLEM TO BE SOLVED: To provide a polyolefin adhesive tape excellent in anti-static property for processing semiconductor wafer with less scraps produced during dicing. <P>SOLUTION: The sheet used as a base of adhesive tape for processing a semiconductor wafer contains high molecular type anti-static agent of 5-30 wt.%, polyolefin based resin of 30-85 wt.%, and rubber-state elastic body of 10-40 wt.%. In the polyolefin based adhesive tape for processing the semiconductor wafer, this sheet is used as a base and an adhesion layer is applied to one face of the sheet. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、シート及び半導体ウエハ加工用粘着テープに関するものである。   The present invention relates to a sheet and an adhesive tape for processing a semiconductor wafer.

半導体装置を製造する工程において、半導体ウエハやパッケージ等を切断する際に半導体ウエハ加工用の粘着テープが用いられている。この粘着テープは、半導体ウエハやパッケージ等に貼り付け、ダイシング、エキスパンティング等を行い、半導体ウエハやパッケージ等を切断して得られた半導体素子をピックアップするために用いられる。   In the process of manufacturing a semiconductor device, an adhesive tape for processing a semiconductor wafer is used when cutting a semiconductor wafer, a package, or the like. This adhesive tape is used for picking up semiconductor elements obtained by affixing, dicing, expanding, etc. on a semiconductor wafer, package, etc., and cutting the semiconductor wafer, package, etc.

このような粘着テープは、基材シートと、基材シートの片面に設けられた粘着層とで構成されている。
基材シートとしては、主にポリ塩化ビニル(PVC)樹脂シートが用いられていた。しかし、PVC樹脂の使用に対する環境問題、PVC樹脂に用いる可塑剤等の添加剤のブリードによる半導体素子の汚染の可能性等を理由として、最近はポリプロピレン系シート、エチレンビニルアルコール系シートやエチレンメタクリル酸アクリレート系のシート等のポリオレフィン系材料を用いた基材シートが開発されている(例えば特許文献1参照)。
Such an adhesive tape is comprised by the base material sheet and the adhesive layer provided in the single side | surface of the base material sheet.
As the base sheet, a polyvinyl chloride (PVC) resin sheet has been mainly used. However, due to environmental problems with the use of PVC resins and the possibility of contamination of semiconductor elements due to bleeding of additives such as plasticizers used in PVC resins, recently, polypropylene sheets, ethylene vinyl alcohol sheets and ethylene methacrylic acid have been used. A base sheet using a polyolefin-based material such as an acrylate-based sheet has been developed (see, for example, Patent Document 1).

近年、半導体素子の小型化・薄型化が進みこれまでは問題になっていなかった、静電気によるデバイス破壊の問題が顕在化してきている。また、特にエチレンビニルアルコール系シートやエチレンメタクリル酸アクリレート系のシートで切り屑(基材シートのカットラインから伸びたヒゲ状の切り残査)のデバイスへの付着が問題になっている。そのため、半導体ウエハ加工用粘着テープにおいて、帯電防止性能が優れ切り屑の発生が少ないポリオレフィン系シートへの要求が高まっている。   In recent years, miniaturization and thinning of semiconductor elements have progressed, and the problem of device destruction due to static electricity, which has not been a problem until now, has become apparent. In particular, there is a problem of adhesion of chips (whisker-like cut residue extending from the cut line of the base material sheet) to the device in an ethylene vinyl alcohol sheet or ethylene methacrylate acrylate sheet. Therefore, in the adhesive tape for semiconductor wafer processing, there is an increasing demand for a polyolefin-based sheet having excellent antistatic performance and less generation of chips.

特開平09−008111号公報JP 09-008111 A

本発明の目的は、帯電防止性に優れ、ダイシング時の切り屑の発生が少ない、ポリオレフィン系シート及びそれを基材シートとして用いたポリオレフィン系半導体ウエハ加工用粘着テープを提供することにある。   An object of the present invention is to provide a polyolefin-based sheet having excellent antistatic properties and less generation of chips during dicing and an adhesive tape for processing a polyolefin-based semiconductor wafer using the same as a base sheet.

本発明は、
(1)半導体ウエハ加工用粘着テープの基材として用いるシートであって、高分子型帯電防止剤が5〜30重量%、ポリオレフィン系樹脂が30〜85重量%、ゴム状弾性体が10〜40重量%、含まれる事を特徴とするシート、
(2)前記高分子型帯電防止剤がイオン伝導型帯電防止剤である(1)項に記載のシート、
(3)前記高分子型帯電防止剤がポリエーテルポリオレフィン共重合体を主成分とするものである(1)項又は(2)項に記載のシート、
(4)ポリオレフィン系樹脂がホモポリプロピレン樹脂である(1)項〜(3)項のいずれかに記載のシート、
(5)23℃−50%RHの環境下でシートのMD方向に5000Vに強制帯電させ、その後、帯電圧が0Vまで減衰する時間が、0.5秒以下である(1)項〜(4)項のいずれかに記載のシート、
(6)(1)項〜(5)項のいずれかに記載のシートの片面に粘着層を施した半導体ウエハ加工用粘着テープ、
である。
The present invention
(1) A sheet used as a base material for an adhesive tape for processing a semiconductor wafer, wherein the polymer type antistatic agent is 5 to 30% by weight, the polyolefin resin is 30 to 85% by weight, and the rubber-like elastic body is 10 to 40%. % By weight, sheet characterized by inclusion,
(2) The sheet according to item (1), wherein the polymer antistatic agent is an ion conductive antistatic agent;
(3) The sheet according to (1) or (2), wherein the polymer-type antistatic agent has a polyether polyolefin copolymer as a main component,
(4) The sheet according to any one of (1) to (3), wherein the polyolefin resin is a homopolypropylene resin,
(5) Forcibly charged to 5000 V in the MD direction of the sheet in an environment of 23 ° C.-50% RH, and thereafter the time for the charged voltage to decay to 0 V is 0.5 seconds or less (1) to (4) ) The sheet according to any one of items
(6) An adhesive tape for processing a semiconductor wafer, wherein an adhesive layer is provided on one side of the sheet according to any one of (1) to (5),
It is.

本発明に従うと、得られたポリオレフィン系シートを基材として用いることにより、帯電防止性に優れ、ダイシング時の切り屑の発生が少ない、半導体ウエハ加工用粘着テープを提供することができる。   According to the present invention, by using the obtained polyolefin-based sheet as a base material, it is possible to provide a pressure-sensitive adhesive tape for processing semiconductor wafers that has excellent antistatic properties and generates less chips during dicing.

以下、本発明を更に詳細に説明する。本発明は、半導体ウエハ加工用粘着テープの基材として用いるポリオレフィン系シートであって、高分子型帯電防止剤が5〜30重量%、ポリオレフィン系樹脂が30〜85重量%、ゴム状弾性体が10〜40重量%、含まれる事を特徴とするシートである。  Hereinafter, the present invention will be described in more detail. The present invention relates to a polyolefin-based sheet used as a base material for an adhesive tape for processing a semiconductor wafer, in which a polymer-type antistatic agent is 5 to 30% by weight, a polyolefin-based resin is 30 to 85% by weight, and a rubber-like elastic body is The sheet is characterized by being contained in an amount of 10 to 40% by weight.

シート基材に煉り込むことで、シート基材の表面に水酸基等の極性基を付与し、空気中の水分と結合する事により帯電防止性を有する一般的な低分子型帯電防止剤は、低湿度下での性能の低下や、帯電防止成分のブリードアウト、水洗等による帯電防止性の低下の問題があるため、高分子型帯電防止剤が好ましく使うことができる。
高分子型帯電防止剤としては、例えばポリエーテルエステルアミドやポリエーテル/ポリオレフィンブロックポリマー等がある。
その中でも、ポリエーテルポリオレフィン共重合体を用いたイオン伝導型帯電防止剤が特に好ましく使う事ができる。
ポリエーテルポリオレフィン共重合体を用いたイオン伝導型帯電防止剤とは、ポリエーテル部及びイオン部による導電機構を有し帯電防止性があり、ポリエーテル部と共重合したオレフィン部により、他のポリオレフィン系樹脂との混練性が優れている。
A typical low molecular weight antistatic agent having an antistatic property by imparting a polar group such as a hydroxyl group to the surface of the sheet base material and bonding with moisture in the air by being embedded in the sheet base material is low. A polymer type antistatic agent can be preferably used because there is a problem in that the performance under humidity is deteriorated or the antistatic property is deteriorated due to bleeding out of the antistatic component or washing with water.
Examples of the polymer antistatic agent include polyether ester amide and polyether / polyolefin block polymer.
Among these, an ion conductive antistatic agent using a polyether polyolefin copolymer can be particularly preferably used.
The ionic conduction type antistatic agent using the polyether polyolefin copolymer has a conductive mechanism by the polyether part and the ionic part and has an antistatic property, and the olefin part copolymerized with the polyether part allows other polyolefins to be used. Excellent kneadability with resin.

高分子型帯電防止剤の配合量は5〜30重量%であり、好ましくは10〜20重量%である。高分子型帯電防止剤の配合量が下限値未満になると基材シートの十分な帯電防止性能が得られず、上限値を超えると基材シートの切り屑の増加や、基材シートのシーティング性の低下を引き起こす。   The compounding amount of the polymer type antistatic agent is 5 to 30% by weight, preferably 10 to 20% by weight. If the compounding amount of the polymer type antistatic agent is less than the lower limit value, sufficient antistatic performance of the base sheet cannot be obtained, and if it exceeds the upper limit value, the amount of chip of the base sheet increases or the sheeting property of the base sheet Cause a decline.

ポリオレフィン系樹脂としては、特に機械的強度の観点からポリプロピレン系樹脂が好ましい。更に、ポリプロピレン系樹脂の中でも粘着テープダイシング時の切り屑の発生が少ないのは、ホモポリプロピレン樹脂である。   As the polyolefin resin, a polypropylene resin is particularly preferable from the viewpoint of mechanical strength. Furthermore, among polypropylene resins, homopolypropylene resins are less likely to generate chips during adhesive tape dicing.

ポリオレフィン系樹脂の配合量は30〜85重量%、好ましくは40〜60重量%である。ポリオレフィン系樹脂の配合量が下限値未満になると十分な機械的強度が得られず、上限値を超えるとエキスパンド性の悪化を引き起こす。   The compounding quantity of polyolefin resin is 30 to 85 weight%, Preferably it is 40 to 60 weight%. When the blending amount of the polyolefin resin is less than the lower limit value, sufficient mechanical strength cannot be obtained, and when the upper limit value is exceeded, the expandability is deteriorated.

ゴム状弾性体とは、室温において弾性を示す天然および合成の重合体樹脂である。半導体ウエハ加工用粘着テープの基材として用いるシート中のゴム状弾性体は、特に規定しないが、ブタジエンやイソプレンを主成分とした、スチレンブタジエン共重合体樹脂やスチレンイソプレン共重合体樹脂等の熱可塑性エラストマーが好ましい。また、耐熱性や耐候性を向上させるために、二重結合部を水素添加したものを用いても良い。ゴム状弾性体中のゴム成分は多いほど復元性に優れるため良いが、ゴム状弾性体がブロッキングして扱いにくい等の問題が起こるため、ゴム状弾性体中のゴム成分の含有率は50〜95重量%のものが好ましい。また、ブロッキング防止剤を添加したゴム状弾性体を用いても良い。  Rubber-like elastic bodies are natural and synthetic polymer resins that exhibit elasticity at room temperature. The rubber-like elastic body in the sheet used as the base material of the semiconductor wafer processing adhesive tape is not particularly defined, but heat such as styrene butadiene copolymer resin or styrene isoprene copolymer resin mainly composed of butadiene or isoprene. A plastic elastomer is preferred. Moreover, in order to improve heat resistance and weather resistance, you may use what hydrogenated the double bond part. The more the rubber component in the rubber-like elastic body, the better the resilience is. However, problems such as the rubber-like elastic body blocking and difficult to handle occur, so the rubber component content in the rubber-like elastic body is 50 to 50%. 95% by weight is preferred. Moreover, you may use the rubber-like elastic body which added the blocking inhibitor.

ゴム状弾性体の配合量は10〜40重量%であり、好ましくは20〜30重量%である。配合量が下限値未満になると基材シートのエキスパンド性が低下する。また、上限値を超えると基材シートの切り屑が増加すると共に、基材シートのシーティング性も悪化する。  The compounding amount of the rubber-like elastic body is 10 to 40% by weight, preferably 20 to 30% by weight. If the blending amount is less than the lower limit, the expandability of the base sheet is lowered. Moreover, when the upper limit is exceeded, chips of the base sheet increase and sheeting properties of the base sheet deteriorate.

23℃−50%RHの環境下でシートのMD方向に5000Vに強制帯電させ、その後、帯電圧0Vまで減衰する時間が、0.5秒以下、好ましくは0.1秒以下、更に好ましくは0.05秒以下である。減衰時間が0.5秒を超えると帯電防止性が悪くなり、発生した静電気によるデバイスの破壊、ゴミの付着等の恐れがある。   In a 23 ° C.-50% RH environment, the sheet is forcibly charged to 5000 V in the MD direction and then decays to a charged voltage of 0 V for 0.5 seconds or less, preferably 0.1 seconds or less, more preferably 0. .05 seconds or less. If the decay time exceeds 0.5 seconds, the antistatic property is deteriorated, and there is a risk of destruction of the device or adhesion of dust due to the generated static electricity.

本シートには、特性を損なわない範囲で、目的に合わせて、各種樹脂や添加剤等を添加することができる。   Various resins, additives, and the like can be added to the sheet in accordance with the purpose as long as the characteristics are not impaired.

本発明のシートを基材層とした半導体ウエハ加工用粘着テープを用いる場合には、基材層の片面に粘着層を付与する必要がある。粘着層についてここでは特に規定しないが、目的に合わせて粘着力等の特性を選ぶ事ができる。   When using the adhesive tape for semiconductor wafer processing which used the sheet | seat of this invention as the base material layer, it is necessary to provide an adhesive layer to the single side | surface of a base material layer. The adhesive layer is not particularly defined here, but characteristics such as adhesive strength can be selected according to the purpose.

切り屑(基材シートのカットラインから伸びたヒゲ状の切り残査)の発生に関しては、帯電防止剤、ゴム状弾性体を添加すると増加し、悪化する傾向にある。しかしながら、ウエハの破壊等を防止するために帯電防止性が必要であり、また、エキスパンド工程や、デバイスをピックアップした後に粘着テープを収納する際の粘着テープの弛みを防止するために、ゴム状弾性体は必須である。そこで、ポリオレフィン系樹脂、その中でもプロピレン系樹脂、更にその中でもホモポリプロピレン樹脂を用いる事により、帯電防止性に優れ、切り屑の発生が少ない、基材シート及びそれを用いた半導体ウエハ加工用粘着テープを提供することができる。なお、問題となる切り屑(基材シートのカットラインから伸びたヒゲ状の切り残査)が発生するのは基材シートからであり、粘着剤からは発生しない。   Regarding the generation of chips (beard cut residue extending from the cut line of the base sheet), it tends to increase and become worse when an antistatic agent and a rubber-like elastic body are added. However, antistatic properties are necessary to prevent wafer breakage, etc., and rubbery elastic is used to prevent loosening of the adhesive tape when storing the adhesive tape after the expansion process or picking up the device. The body is essential. Therefore, by using polyolefin-based resins, especially propylene-based resins, and among them, homopolypropylene resins, it is excellent in antistatic properties and generates less chips, and an adhesive tape for processing semiconductor wafers using the same. Can be provided. In addition, it is from a base material sheet, and it does not generate | occur | produce from a base material, although the chip which becomes a problem (beard-like cutting residue extended from the cut line of the base material sheet) generate | occur | produces.

ダイシングテープとして用いる場合の基材シート厚みとしては、30〜300μ、好ましくは50〜200μ、更に好ましくは70〜150μである。また粘着層の厚みとしては、3〜50μ、好ましくは、5〜30μ、更に好ましくは5〜20μである。   The substrate sheet thickness when used as a dicing tape is 30 to 300 μm, preferably 50 to 200 μm, more preferably 70 to 150 μm. Moreover, as thickness of the adhesion layer, it is 3-50 micrometers, Preferably, it is 5-30 micrometers, More preferably, it is 5-20 micrometers.

本発明を実施例により更に詳細に説明するが、これは単なる例示であり、本発明はこれにより限定されるものではない。
<基材シートの作製>
下記に示す原料を表1に示す配合比で用い、厚み100μのシートを得た。
・高分子型帯電防止剤
高分子型帯電防止剤1 ペレスタット230(三洋化成工業(株)製)
高分子型帯電防止剤2 サンコノールTBX−310(三光化学工業(株)製)
・ポリオレフィン系樹脂
ホモポリプロピレン1 ノーブレンFS2016(住友化学(株)製)
(MFR:2.1g/10min 引張弾性率:1300MPa)
ホモポリプロピレン2 ノバテックEA7A(日本ポリプロ(株)製)
(MFR:1.4g/10min 引張弾性率:1500MPa)
ホモポリプロピレン3 ノバテックSA4L(日本ポリプロ(株)製)
(MFR:5.3g/10min 引張弾性率:2050MPa)
ランダムポリプロピレン プライムポリプロF327(プライムポリマー(株)製)
(MFR:7.0g/10min 引張弾性率: 850MPa)
ブロックポリプロピレン サンアロマーPB270A(サンアロマー(株)製)
(MFR:0.7g/10min 引張弾性率: 950MPa)
低密度ポリエチレン スミカセンF238−1(住友化学(株)製)
(MFR:2.0g/10min 引張弾性率: 200MPa)
線状低密度ポリエチレン スミカセンEFV202(住友化学(株)製)
(MFR:1.9g/10min 引張弾性率: 310MPa)
・ゴム状弾性体
スチレンイソプレン共重合体 ハイブラー7125((株)クラレ製)
スチレンブタジエン共重合体 タフプレン125(旭化成ケミカルズ(株)製)
スチレンエチレンプロピレン共重合体 セプトン2007(((株)クラレ製)
オレフィン系熱可塑性エラストマー ゼラス7053(三菱化学(株)製)
The present invention will be described in more detail by way of examples, but this is merely an example, and the present invention is not limited thereby.
<Preparation of base sheet>
The following raw materials were used at the compounding ratios shown in Table 1 to obtain a sheet having a thickness of 100 μm.
・ Polymer type antistatic agent Polymer type antistatic agent 1 Pelestat 230 (manufactured by Sanyo Chemical Industries, Ltd.)
Polymeric antistatic agent 2 Sanconol TBX-310 (manufactured by Sanko Chemical Co., Ltd.)
・ Polyolefin resin Homopolypropylene 1 Nobrene FS2016 (manufactured by Sumitomo Chemical Co., Ltd.)
(MFR: 2.1 g / 10 min Tensile modulus: 1300 MPa)
Homo polypropylene 2 Novatec EA7A (Nippon Polypro Co., Ltd.)
(MFR: 1.4 g / 10 min Tensile modulus: 1500 MPa)
Homo polypropylene 3 Novatec SA4L (Nippon Polypro Co., Ltd.)
(MFR: 5.3 g / 10 min Tensile modulus: 2050 MPa)
Random polypropylene Prime polypro F327 (manufactured by Prime Polymer Co., Ltd.)
(MFR: 7.0 g / 10 min Tensile elastic modulus: 850 MPa)
Block polypropylene Sun Allomer PB270A (manufactured by Sun Allomer Co., Ltd.)
(MFR: 0.7 g / 10 min Tensile modulus: 950 MPa)
Low density polyethylene Sumikasen F238-1 (manufactured by Sumitomo Chemical Co., Ltd.)
(MFR: 2.0 g / 10 min Tensile modulus: 200 MPa)
Linear low density polyethylene Sumikasen EFV202 (manufactured by Sumitomo Chemical Co., Ltd.)
(MFR: 1.9 g / 10 min Tensile modulus: 310 MPa)
・ Rubber elastic body Styrene isoprene copolymer Hibler 7125 (manufactured by Kuraray Co., Ltd.)
Styrene butadiene copolymer Toughprene 125 (manufactured by Asahi Kasei Chemicals Corporation)
Styrene ethylene propylene copolymer Septon 2007 (manufactured by Kuraray Co., Ltd.)
Olefin-based thermoplastic elastomer XELAS 7053 (Mitsubishi Chemical Corporation)

<粘着層の作製>
2−エチルヘキシルアクリレート30重量%、酢酸ビニル70重量%および2−ヒドロキシエチルメタクリレート1重量%をトルエン溶媒中にて溶液重合させ重量平均分子量150,000のベース樹脂を得た。
このベース樹脂100重量部に対して、エネルギー線硬化型樹脂として2官能ウレタンアクリレート100重量部(三菱レイヨン社製、重量平均分子量が11,000)と、架橋剤としてトリレンジイソシアネートの多価アルコール付加体(コロネートL、日本ポリウレタン社製)15重量部と、エネルギー線重合開始剤として2,2−ジメトキシ−2−フェニルアセトフェノン5重量部とを酢酸エチルに溶解した後、剥離処理したポリエステルフィルム(厚さ38μm)に乾燥後の厚さが10μmになるように塗工し、80℃で5分間乾燥して、粘着層を得た。
<Preparation of adhesive layer>
A base resin having a weight average molecular weight of 150,000 was obtained by solution polymerization of 30% by weight of 2-ethylhexyl acrylate, 70% by weight of vinyl acetate and 1% by weight of 2-hydroxyethyl methacrylate in a toluene solvent.
Addition of 100 parts by weight of bifunctional urethane acrylate as an energy ray curable resin (Mitsubishi Rayon Co., Ltd., weight average molecular weight of 11,000) and addition of polyhydric alcohol of tolylene diisocyanate as a crosslinking agent to 100 parts by weight of this base resin 15 parts by weight of a body (Coronate L, manufactured by Nippon Polyurethane Co., Ltd.) and 5 parts by weight of 2,2-dimethoxy-2-phenylacetophenone as an energy ray polymerization initiator were dissolved in ethyl acetate, and then a release-treated polyester film (thickness) The thickness after drying was 10 μm and dried at 80 ° C. for 5 minutes to obtain an adhesive layer.

<粘着テープの作製>
上述の粘着層を30℃でラミネートロールを用いて、表1の配合比で得られた厚み100μのシートにラミネートして半導体ウエハ加工用粘着テープを得た。
<Production of adhesive tape>
The above-mentioned adhesive layer was laminated on a sheet having a thickness of 100 μm obtained at a blending ratio shown in Table 1 using a laminate roll at 30 ° C. to obtain an adhesive tape for semiconductor wafer processing.

得られた粘着テープを以下の項目で評価を実施した。
<1>切り屑
ダイシング条件
ダイシングブレード:NBC−ZH2050−SE 27HEDD(株式会社ディスコ製)、
ブレード回転数:40000rpm
カット速度:100mm/sec
ブレードハイト:60μ
ブレードクーラー:2L/min
シリコンミラーウエハを貼り付けた(ミラー面貼付け)半導体ウエハ加工用粘着テープを、ウエハ貼付け後20分間放置し、上記ダイシング条件で5mm□にダイシングを実施した。ダイシング後のテープをUV照射し、ウエハを剥離後、カットラインを顕微鏡で観察した。任意の隣接する10チップ(5×2)のダイシングラインの各辺の切り屑を観察した。切り屑の最大長さが15μ以下のものは◎、15μ〜30μのものは○、30〜50μのものは△、50μより長いものは×とした。そして、50μ以下の切り屑の長さのものを合格とした。
The obtained adhesive tape was evaluated on the following items.
<1> Chip dicing conditions Dicing blade: NBC-ZH2050-SE 27HEDD (manufactured by DISCO Corporation)
Blade rotation speed: 40000 rpm
Cutting speed: 100mm / sec
Blade height: 60μ
Blade cooler: 2L / min
The adhesive tape for semiconductor wafer processing with the silicon mirror wafer attached (mirror surface attachment) was allowed to stand for 20 minutes after wafer attachment, and was diced to 5 mm □ under the above dicing conditions. The tape after dicing was irradiated with UV, the wafer was peeled off, and the cut line was observed with a microscope. Chips on each side of an arbitrary adjacent 10 chip (5 × 2) dicing line were observed. When the maximum length of the chips is 15 μm or less, “◎”, when 15 μm to 30 μm, “◯”, when 30-50 μm, “Δ”, and when longer than 50 μm, “×”. And the thing of the length of the chip of 50 micrometers or less was considered as the pass.

<2>減衰時間
STATIC DECAY METER MODEL 406C(electro−tech systems,inc.製)を用いて、23℃−50%RHの環境下で帯電減衰時間の測定を行った。粘着テープのMD方向に電圧がかかるように機械にセットし、5000Vに強制帯電させ、その後、帯電圧が0Vまで減衰する時間を測定し、0.05秒以下であるものは◎、0.05秒〜0.1秒であるものは○、0.1秒〜0.5秒であるものは△、0.5秒より長いものは×とした。そして、減衰時間が0.5秒以下のものを合格とした。
<2> Decay time Using STATIC DECAY METER MODEL 406C (manufactured by electro-tech systems, Inc.), the charge decay time was measured in an environment of 23 ° C. to 50% RH. Set in the machine so that voltage is applied in the MD direction of the adhesive tape, forcibly charge to 5000V, and then measure the time for the charged voltage to decay to 0V. Those having a second to 0.1 seconds were marked with ◯, those having a time between 0.1 seconds and 0.5 seconds were marked with Δ, and those having a time longer than 0.5 seconds were marked with ×. And the thing whose decay time was 0.5 second or less was made into the pass.

<3>エキスパンド性
半導体ウエハ加工用粘着テープを6インチリングに貼付け、エキスパンダーMODEL HS−1010/190(ヒューグルエレクトロニクス株式会社製)で20mmエキスパンドした時にテープの破れが無いものを○、テープが破れるものを×とした。
<3> Expandability Adhesive tape for semiconductor wafer processing is affixed to a 6-inch ring, and when the expander MODEL HS-1010 / 190 (manufactured by Hugle Electronics Co., Ltd.) is expanded 20 mm, the tape is not torn and the tape is torn. The thing was made into x.

Figure 2008244377
Figure 2008244377

本発明のポリオレフィン系シートを基材として用いることにより、帯電防止性に優れ、切り屑の発生が少ないポリオレフィン系半導体ウエハ加工用粘着テープを提供する事ができる。   By using the polyolefin-based sheet of the present invention as a base material, it is possible to provide a pressure-sensitive adhesive tape for processing a polyolefin-based semiconductor wafer that has excellent antistatic properties and generates less chips.

Claims (6)

半導体ウエハ加工用粘着テープの基材として用いるシートであって、高分子型帯電防止剤が5〜30重量%、ポリオレフィン系樹脂が30〜85重量%、ゴム状弾性体が10〜40重量%、含まれる事を特徴とするシート。   A sheet used as a base material for an adhesive tape for processing a semiconductor wafer, wherein the polymer antistatic agent is 5 to 30% by weight, the polyolefin resin is 30 to 85% by weight, the rubbery elastic body is 10 to 40% by weight, A sheet characterized by being included. 前記高分子型帯電防止剤がイオン伝導型帯電防止剤である請求項1に記載のシート。   The sheet according to claim 1, wherein the polymer type antistatic agent is an ion conduction type antistatic agent. 前記高分子型帯電防止剤がポリエーテルポリオレフィン共重合体を主成分とするものである請求項1又は2に記載のシート。 The sheet according to claim 1 or 2, wherein the polymer-type antistatic agent has a polyether polyolefin copolymer as a main component. ポリオレフィン系樹脂がホモポリプロピレン樹脂である請求項1〜3のいずれかに記載のシート。   The sheet according to any one of claims 1 to 3, wherein the polyolefin resin is a homopolypropylene resin. 23℃−50%RHの環境下でシートのMD方向に5000Vに強制帯電させ、その後、帯電圧が0Vまで減衰する時間が、0.5秒以下である請求項1〜4のいずれかに記載のシート。   5. The time when the charged voltage is forcibly charged to 5000 V in the MD direction of the sheet in an environment of 23 ° C.-50% RH and thereafter the voltage is attenuated to 0 V is 0.5 seconds or less. 6. Sheet. 請求項1〜5のいずれかに記載のシートの片面に粘着層を施した半導体ウエハ加工用粘着テープ。   A pressure-sensitive adhesive tape for processing a semiconductor wafer, wherein a pressure-sensitive adhesive layer is provided on one side of the sheet according to claim 1.
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JP2010123763A (en) * 2008-11-20 2010-06-03 Sumitomo Bakelite Co Ltd Adhesive film for processing semiconductor wafer
JP2011210989A (en) * 2010-03-30 2011-10-20 Furukawa Electric Co Ltd:The Antistatic adhesive tape for semiconductor processing
JP2011216563A (en) * 2010-03-31 2011-10-27 Sumitomo Bakelite Co Ltd Dicing film
JP2012211314A (en) * 2011-03-24 2012-11-01 Sumitomo Bakelite Co Ltd Adhesive tape for working semiconductor wafer and the like
KR20230071116A (en) 2020-09-24 2023-05-23 리껭테크노스 가부시키가이샤 Antistatic resin composition, resin film, and base film for antistatic dicing tape

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JP2004035642A (en) * 2002-07-01 2004-02-05 Sumitomo Bakelite Co Ltd Pressure-sensitive adhesive sheet for semiconductor substrate processing
JP2008147341A (en) * 2006-12-08 2008-06-26 Gunze Ltd Substrate film for dicing

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JP2004035642A (en) * 2002-07-01 2004-02-05 Sumitomo Bakelite Co Ltd Pressure-sensitive adhesive sheet for semiconductor substrate processing
JP2008147341A (en) * 2006-12-08 2008-06-26 Gunze Ltd Substrate film for dicing

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010123763A (en) * 2008-11-20 2010-06-03 Sumitomo Bakelite Co Ltd Adhesive film for processing semiconductor wafer
JP2011210989A (en) * 2010-03-30 2011-10-20 Furukawa Electric Co Ltd:The Antistatic adhesive tape for semiconductor processing
JP2011216563A (en) * 2010-03-31 2011-10-27 Sumitomo Bakelite Co Ltd Dicing film
JP2012211314A (en) * 2011-03-24 2012-11-01 Sumitomo Bakelite Co Ltd Adhesive tape for working semiconductor wafer and the like
US20140011026A1 (en) * 2011-03-24 2014-01-09 Sumitomo Bakelite Co., Ltd. Adhesive tape for processing semiconductor wafer and the like
EP2690146A1 (en) * 2011-03-24 2014-01-29 Sumitomo Bakelite Co., Ltd. Adhesive tape for processing semiconductor wafer and the like
KR20140020882A (en) * 2011-03-24 2014-02-19 스미또모 베이크라이트 가부시키가이샤 Adhesive tape for processing semiconductor wafer and the like
EP2690146A4 (en) * 2011-03-24 2014-08-20 Sumitomo Bakelite Co Adhesive tape for processing semiconductor wafer and the like
KR20230071116A (en) 2020-09-24 2023-05-23 리껭테크노스 가부시키가이샤 Antistatic resin composition, resin film, and base film for antistatic dicing tape

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