TWI661023B - A dicing film, a dicing film for a semiconductor wafer, a substrate film for dicing, and a method for manufacturing a semiconductor chip - Google Patents

Abstract

The cutting film of the present invention has a base material and an adhesive layer formed on the base material, and the melt tension of the base material at 200 ° C. is 80 mN or more. The dicing film for a semiconductor wafer according to the present invention includes a base material and an adhesive layer formed on one side of the base material, and the side of the adhesive layer side in the base material and the adhesive layer. The distance (L) from the surface opposite to the substrate is 20 μm or more and 75 μm or less. The dicing base film of the present invention includes a base material layer and a surface layer disposed on one of the main surfaces of the base material layer. The surface layer contains a polystyrene resin and a vinyl aromatic hydrocarbon-conjugated polymer. In the diene copolymer or a hydrogenated product thereof, the content of the polystyrene resin in the surface layer exceeds 50% by weight.

Description

Dicing film, dicing film for semiconductor wafer, dicing base film, and method for manufacturing semiconductor wafer

The present invention relates to a method for manufacturing a dicing film, a dicing film for a semiconductor wafer, a base film for dicing, and a semiconductor wafer. This application is based on Japanese Patent Application No. 2013-038301 filed with Japan on February 28, 2013, Japanese Patent Application No. 2013-084656 filed with Japan on April 15, 2013, and with Japan on October 31, 2013 Japan Patent No. 2013-227054 claims priority, and its contents are incorporated herein.

In the step of manufacturing a semiconductor device, after semiconductor components such as a semiconductor wafer or a package are manufactured in a large area in advance, a dicing film is used during cutting. The dicing film is used to attach to a semiconductor component, cut into a wafer shape (cut, singulate), and then perform the expansion (expansion) of the dicing film to separate the wafers from each other, and then pick the cut or singulated The aforementioned semiconductor component.

Generally, the dicing film is composed of a dicing substrate film cut by a dicing blade, and an adhesive layer for fixing a semiconductor wafer or the like. Conventionally, a polyvinyl chloride (PVC) resin film has been used as a base film. However, in order to prevent the contamination of semiconductor components due to the adhesion of plasticizers contained in PVC resin films or increase awareness of environmental issues, olefin resins, ethylene vinyl alcohol resins, and ethylene methacrylic acid have recently been developed. A base film of a non-PVC resin-based material such as an acrylic resin (for example, refer to Patent Document 1).

The trend toward miniaturization and thinning of semiconductor components observed in recent years requires stricter levels of contamination of semiconductor components.切断 When cutting semiconductor wafers, etc., a cutting blade is used to cut the target line. However, in order to completely cut the semiconductor wafers, etc., a part of the dicing film is cut. Therefore, when the thickness accuracy of the dicing film is different, there may be a gap in the contact method of the dicing blade during the dicing step, which may easily cause damage to the semiconductor wafer and the like. In addition, if there is a difference in the film thickness accuracy, uncut or chipped semiconductor wafers and the like may occur in the dicing step. The cutting chips (substrate chips) from the dicing film will contaminate the semiconductor wafer and the like and reduce the yield of the semiconductor wafer. Therefore, it is necessary to avoid the occurrence of cutting chips as much as possible. In addition, the substrate film layer of the dicing film becomes a substrate whisker (a whisker cutting residue extending from the cutting line of the substrate film) and adheres to the surface of a semiconductor wafer or the like, which causes the contamination of the semiconductor wafer or the like. In particular, if the rotation speed of the dicing blade is increased in order to improve the chip nick of the wafer, the problem of the occurrence of the substrate whisker will become apparent.

In addition, in order to improve the accuracy of semiconductor wafer inspection and further improve productivity, it is also required that the dicing film can be uniformly and widely expanded smoothly and smoothly without cracking or cutting (hereinafter referred to as expandability). After attaching and cutting a semiconductor member, in order to increase the gap between the semiconductor members, the dicing film is expanded. However, if the substrate is not sufficiently tough and flexible, the dicing film may break during expansion. . Therefore, a cutting film which can suppress the whiskers of the substrate during cutting and does not break the substrate during expansion is sought.

In addition, in a manufacturing step such as a semiconductor wafer, if the dicing tape is charged and charged, problems such as product damage or work failure may occur. For example, when the separator is peeled from the cutting tape, or when the blade is in contact with the cutting tape during cutting, the cutting tape is easily charged. In addition, when the dicing tape is removed from the suction table after dicing, or when a wafer or a package is picked up, the dicing tape is also charged.

For example, Patent Document 2 discloses an adhesive tape for antistatic semiconductor processing, which includes an antistatic layer composed of a resin composition containing 10 to 45 parts by mass of a polyether-containing antistatic resin, and an intramolecular layer. Adhesive layer of a base polymer having a radiation-hardenable unsaturated carbon bond. This dicing tape can suppress the electrification using an antistatic layer. However, if a blade enters the antistatic agent layer, there will be a problem that a substrate whisker will occur when the blade rotates at high speed.

In addition, the dicing film is usually rolled into a roll, and is manufactured, stored, and transported. If the films are adhered to each other, the quality is deteriorated, and thus the blocking resistance is also required.

In response to the above requirements, various cutting diaphragms have been proposed. For example, Patent Document 3 proposes a dicing film including a dicing base film having a hydride containing a vinyl aromatic hydrocarbon-conjugated diene copolymer: 60 to 90% by weight, and Polystyrene resin: A surface layer made of 10 to 40% by weight of a resin component. [Prior Art Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2003-257893 [Patent Document 2] Japanese Patent Laid-Open No. 2010-077862 [Patent Document 3] Japanese Patent Laid-Open No. 2013-55112

[Questions to be Solved by the Invention]

However, the conventional cutting diaphragm has insufficient suppression effect on chip generation, and there is still room for improvement.

Further, the expanded cutting film is housed in a ring cassette, but it is desirable that the film can be restored to a size that can be easily accommodated in the ring box in consideration of the film's accommodation (hereinafter referred to as resilience.) Cutting diaphragm. However, the conventional dicing diaphragm has not been able to obtain sufficient recoverability.

The present disclosure is provided in one or more embodiments, and a dicing film and a semiconductor wafer having an antistatic effect during a dicing step during semiconductor manufacturing, and having less occurrence of chips or substrate whiskers, and having excellent expandability and resilience. A dicing film and a dicing base film. [Solution to Problem]

Such an object is achieved by the present invention described in the following (1) to (21). (1) A cutting film having a substrate made of resin and an adhesive layer formed on the substrate, and the melting tension of the substrate at 200 ° C is 80 mN or more. (2) The cutting film according to (1), wherein the elongation at break of the substrate at 80 ° C is 750% or less. (3) The cutting film according to (1) or (2), wherein the elongation at break of the substrate at 23 ° C is more than 50%. (4) The cutting film according to any one of (1) to (3), wherein the thickness of the substrate is 50 to 250 μm. (5) The cutting film according to any one of (1) to (4), wherein the adhesive layer contains any one or more of a rubber-based, a silicone-based, and an acrylic-based adhesive.

(6) A dicing film for a semiconductor wafer, comprising: a substrate, and an adhesive layer formed on one side of one of the substrates; 面 the surface of the substrate on the adhesive layer side, and the adhesive The distance (L) between the layer and the surface opposite to the substrate is 20 μm or more and 75 μm or less. (7) The dicing film for semiconductor wafers according to (6), wherein the thickness of the substrate is 50 μm or more and 300 μm or less. (8) The dicing film for semiconductor wafers according to (6) or (7), wherein the base material contains an antistatic agent in an amount of 3% by weight or more and 30% by weight or less based on the entire base material. (9) The dicing film for semiconductor wafers according to any one of (6) to (8), wherein the dicing film for semiconductor wafers has an intermediate layer between the substrate and the adhesive layer. (10) The dicing film for semiconductor wafers according to (9), wherein the elongation at break of the intermediate layer at 80 ° C is 750% or less. (11) The dicing film for a semiconductor wafer according to (9) or (10), wherein the intermediate layer is substantially free of an antistatic agent. (12) The dicing film for semiconductor wafers according to any one of (9) to (11), wherein the thickness of the intermediate layer is 10 μm or more and 70 μm or less.

(13) A substrate film for cutting, comprising: a base material layer and a surface layer disposed on one main surface of the base material layer; the surface layer contains a polystyrene resin and a vinyl aromatic hydrocarbon-conjugate The diene copolymer or its hydride, The content of the polystyrene resin in the surface layer exceeds 50% by weight. (14) The base film for cutting according to (13), wherein the polystyrene-based resin is at least one selected from the group consisting of general-purpose polystyrene and impact-resistant polystyrene. (15) The base film for cutting according to (13) or (14), wherein the vinyl aromatic hydrocarbon-conjugated diene copolymer is a styrene-ethylene-butadiene-styrene copolymer. (16) The base film for cutting according to any one of (13) to (15), wherein the content of the vinyl aromatic hydrocarbon in the vinyl aromatic hydrocarbon-conjugated diene copolymer is 10% by weight or more 50% by weight or less. (17) The substrate film for cutting according to any one of (13) to (16), wherein the content of the polystyrene resin deposited on the surface layer is more than 50% by weight and 85% by weight or less, and is deposited on the surface The content of the vinyl aromatic hydrocarbon-conjugated diene copolymer or its hydride in the layer is 15% by weight or more and 50% by weight or less. (18) The base film for cutting according to any one of (13) to (17), wherein the surface layer is a cut-in layer cut by a cutting blade. (19) The base film for cutting according to any one of (13) to (18), wherein an intermediate layer is further included between the base material layer and the surface layer. (20) A cutting film provided with an adhesive layer on a main surface of the surface layer side of the base film for cutting according to any one of (13) to (19). (21) A method for manufacturing a semiconductor wafer, including the following steps: attaching step, attaching the dicing film and semiconductor component as in (20); cutting step, cutting and singulating the semiconductor component; extending step, dicing The diaphragm expands and expands between adjacent singulated semiconductor components; a picking step to pick up the singulated semiconductor components. [Effect of the invention]

According to the present invention, it is possible to provide a dicing film having antistatic properties at the time of semiconductor manufacturing, and having less occurrence of chips or substrate whiskers, and having excellent expandability and resilience, a dicing film for semiconductor wafers, and dicing. Use a base film.

Preferred examples of the present invention are described below, but the present invention is not limited to these examples. Additions, omissions, substitutions, and other changes may be made without departing from the spirit of the present invention.中 In the present invention, the "semiconductor wafer" includes a semiconductor wafer, a semiconductor substrate, and a semiconductor element. In addition, in the present invention, the "dicing film for semiconductor wafers" includes a dicing film for semiconductor wafers, a dicing film for semiconductor substrates, and a dicing film for semiconductor elements. (First Embodiment)) A first embodiment of a dicing film according to the present invention will be described in detail with reference to FIG. 1.

As shown in FIG. 1, the cutting film 3 of the present invention includes a substrate 1 and an adhesive layer 2.

Hereinafter, the configuration of each part of the cutting film 3 will be described in order.

(Base material 1) The base material 1 is used to stabilize semiconductor wafers and the like during transportation, to cut into the adhesive layer at the time of dicing, and to increase the gap between wafers after dicing.此 Here, the melt tension of the substrate 1 at 200 ° C is 80 mN or more and 300 mN or less. In the cutting step, when cutting a semiconductor wafer or the like, frictional heat may occur between the dicing blade and the dicing film. Therefore, the contact part with the cutting blade will be exposed to high temperature, the substrate will become molten, soft and easy to stretch, and the chips from the substrate will be stretched and extended by the rotation of the cutting blade. This is the substrate whisker generated in the cutting step. One of the reasons. At this point, since the base material 1 of the present invention has a melting tension of 200 ° C. of 80 mN or more and 300 mN or less, it is not easy to be in a high-temperature state to become a soft and easy-to-elongate state. Therefore, it is possible to suppress the occurrence of substrate whiskers in the cutting step.熔融 The melting tension of the base material 1 at 200 ° C is not particularly limited if it is 80 mN or more and 300 mN or less, preferably 100 mN or more and 260 mN or less, and more preferably 120 mN or more and 220 mN or less.

The elongation at break of the substrate 1 at 80 ° C is preferably 40% or more and 750% or less, more preferably 60% or more and 600% or less, and more preferably 80% or more and 400% or less. By setting the elongation at break of the base material 1 at 80 ° C to the upper limit 値 or less, the occurrence of whiskers on the base material can be suppressed even when the frictional heat generated during cutting is below the melting temperature.

The breaking elongation of the base material 1 at 23 ° C is preferably 50% or more and 1200% or less. If the film is cut, if the substrate is not sufficiently tough, there may be a problem that the substrate breaks during expansion, and the elongation at break of substrate 1 at 23 ° C near the normal temperature during the expansion step is Above 50%, the substrate 1 is difficult to break during expansion. If the elongation at break of the substrate 1 at 23 ° C is 50% or more and 1200% or less, it is not particularly limited, but is preferably 100% or more and 1100% or less, and more preferably 200% or more and 1000% or less.

In addition, if the frictional heat with the cutting blade exceeds 80 ° C, it is preferable that the substrate 1 still has a low elongation at break at a temperature exceeding 80 ° C. For example, the elongation at break at 100 ° C is preferably 600% or less, 400 % Is better. As a result, the occurrence of substrate whiskers in the cutting step can be further suppressed.

The resin contained in the substrate 1 is not particularly limited as long as it does not impair the effects of the present invention, and examples thereof include polyolefins such as polyvinyl chloride, polyethylene, polypropylene, polybutene, polybutadiene, and polymethylpentene. Resins, ethylene / vinyl acetate copolymers, ionic polymers, ethylene / (meth) acrylic copolymers, olefin copolymers such as ethylene / (meth) acrylate copolymers, polyethylene terephthalate And polyalkylene terephthalate-based resins such as polybutylene terephthalate, styrene-based thermoplastic elastomers, olefin-based thermoplastic elastomers, polyvinyl isoprene, and polycarbonate And other thermoplastic resins, or mixtures of two or more of these thermoplastic resins, and mixtures with elastomers.

The thickness of the substrate 1 is not particularly limited, but is preferably 50 to 250 μm, more preferably 70 to 200 μm, and more preferably 80 to 150 μm. When the thickness of the base material 1 is equal to or more than the aforementioned lower limit ，, the base material 1 is less likely to break during expansion, and when the thickness of the base material 1 is equal to or less than the aforementioned upper limit 有时, it may be excellent in terms of cost.

In addition, the base material 1 may be added with various resins, additives, etc. in accordance with the purpose, as long as the effect of the present invention is not impaired. For example, in order to impart antistatic properties, examples of materials that can be added include polymeric antistatic agents such as polyether / polyolefin block polymers or polyetheresteramine block polymers, and carbon black. In the case of imparting an antistatic effect, an ion conductive antistatic agent using a polyether / polyolefin copolymer is preferred from the viewpoint of compatibility with an olefin resin.

In order to increase the melt tension, a modifier such as a high melt tension polyolefin elastomer or a polytetrafluoroethylene (PTFE) system may be added. For example, in the case of polytetrafluoroethylene-based modifiers, due to the characteristics of high crystallinity and low intermolecular force of polytetrafluoroethylene, polytetrafluoroethylene will be dispersed into a fibrous form by adding it to olefin resins, etc. A pseudo-three-dimensional network is formed, thereby helping to increase the melt tension of the substrate 1.

(Adhesive layer 2) As shown in FIG. 1, an adhesive layer 2 is formed on a substrate 1 of a dicing film 3 of the present invention. The pressure-sensitive adhesive layer 2 has a function of holding the pressure-sensitive adhesive on the dicing film 3. (2) Examples of the resin composition used in the adhesive layer 2 include rubber-based adhesives, silicone-based adhesives, acrylic-based adhesives, ultraviolet-curable urethane acrylate resins, and isocyanate-based crosslinking agents. Among these, it is preferable to contain any one or more of a rubber-based adhesive, a silicone-based adhesive, and an acrylic-based adhesive for the purpose of fixing semiconductor components, flying out of end materials, and chipping. In addition, it is preferable that the above-mentioned acrylic adhesive has a polar group. Examples of the acrylic adhesive having a polar group include butyl acrylate containing a carboxyl group. Adhesive layer 2 contains acrylic adhesive with polar group, which is especially suitable for suppressing air bubble trapping, end material flying out and debris during semiconductor component fixing.

The thickness of the adhesive layer 2 is not particularly limited, but is preferably 3 μm or more and 40 μm or less, and is preferably 5 μm or more and 20 μm or less for cutting applications such as dicing of a semiconductor wafer. In addition, for cutting applications of special members such as packages, the thickness is preferably 10 μm or more and 30 μm or less. When it is at least the lower limit of the aforementioned range, the adherence of the adherend is excellent, and when it is at most the upper limit of the aforementioned range, the processability and cost may be superior in cutting.

<An example of a method for manufacturing a dicing film> The adhesive layer 2 of the dicing film 3 of the present invention is a known coating such as roll coating or gravure coating on the substrate 1 or the resin film containing the substrate 1 A coating solution obtained by dissolving or dispersing a resin used as the adhesive layer 2 in an appropriate solvent and drying it is formed.

The cutting film 3 of the present invention may be provided with another resin layer according to the purpose, as long as the effect of the present invention is not impaired.

Next, the second embodiment of the present invention will be described, but the differences from the first embodiment will be mainly described, and the description of the same matters will be omitted.

An example of a dicing film for a semiconductor wafer according to the present invention will be described in detail below with reference to FIGS. 2 to 4.

As shown in FIG. 2, the dicing film 110 for a semiconductor wafer of the present invention includes a base material 11 and an adhesive layer 12 formed on one surface side thereof. The base material 11 is used to stabilize the wafer during transportation and to increase the gap between the wafers after dicing. The adhesive layer 12 has a function of holding the adherend to the dicing film 110 for semiconductor wafers.

Here, as described above, in the cutting step, chips or substrate whiskers occur from the substrate due to the cutting blade contacting the substrate or cutting the substrate. At this point, the distance (L) of the dicing film 110 for a semiconductor wafer of the present invention on the surface of the adhesive layer 12 side of the substrate 11 and the surface of the adhesive layer 12 on the side opposite to the substrate is 20 μm or more. , 75 μm or less. When the distance (L) is 20 μm or more, in the cutting step, when the dicing blade is cut into the surface of the dicing film 110 for a semiconductor wafer in a vertical direction, the dicing blade and the substrate 11 will not contact, or even contact, the cutting The distance is still short, so it can significantly suppress the occurrence of chips or substrate whiskers as described above. Furthermore, when the distance (L) is 75 μm or less, breakage during expansion can be suppressed. Therefore, the pick-up step after dicing can ensure the wafer interval, and the pick-up of the wafer can be performed

The distance (L) may be 20 μm or more and 75 μm or less, preferably 25 μm or more and 60 μm or less, and more preferably 25 μm or more and 50 μm or less. When the distance (L) is within the aforementioned range, the aforementioned effect can be made more remarkable.

(Base material 11) The resin constituting the base material 11 is not particularly limited as long as it can pass through radiation (visible light, near infrared rays, ultraviolet rays, X-rays, electron beams, etc.), and it can be used, for example, as the first embodiment The form is the same, or low density polyethylene, high density polyethylene, polystyrene, a mixture of polystyrene and rubber. Among these, from the viewpoints of expandability and substrate whisker suppression, a mixture of an ionic polymer, low density polyethylene, or polystyrene with rubber or an elastomer is preferred.

The thickness of the substrate 11 is not particularly limited, but is preferably 50 μm or more and 300 μm or less, more preferably 60 μm or more and 250 μm or less, and more preferably 80 μm or more and 220 μm or less. The thickness of the base material 11 is equal to or more than the aforementioned lower limit ，, and the base material 11 is less likely to break during expansion. By setting the thickness of the base material 11 to be equal to or less than the aforementioned upper limit 能, the occurrence of substrate whiskers during cutting can be more suppressed.

In addition, the base material 11 can be added with various resins, additives, and the like similar to the first embodiment in accordance with the purpose, as long as the effect of the present invention is not impaired.

When the base material 11 contains an antistatic agent, the content of the antistatic agent is preferably 3% by weight or more and 30% by weight or less, more preferably 5% by weight or more and 25% by weight or less with respect to the entire base material 11. It is preferably 10% by weight or more and 20% by weight or less. The antistatic agent contained in the base material 11 is in the aforementioned range, and can suppress static electricity when the release film is peeled from the tape or when the wafer is picked up.

(Adhesive Layer 12) The resin composition used as the adhesive layer 12 may be the same as the first embodiment. The rhenium adhesive layer 12 is particularly suitable for fixing semiconductor components, suppressing flying-out of the end material, and suppressing debris by containing an acrylic adhesive having a polar group.

The thickness of the adhesive layer 12 is not particularly limited, but is preferably 3 μm or more and 35 μm or less, and more preferably 5 μm or more and 20 μm or less.

(Intermediate layer 13) Furthermore, as shown in FIG. 3, the dicing film for a semiconductor wafer of the present invention is preferably provided with an intermediate layer 13 between the substrate 11 and the adhesive layer 12. Thereby, it is easy to make the thickness of the adhesive layer 12 into the said range and to set the said distance (L) into the said range at the same time.

The resin constituting the intermediate layer 13 is not particularly limited, and examples thereof include low-density polyethylene, polystyrene, polystyrene, and rubber. Among them, a mixture of low-density polyethylene or polystyrene with a rubber or an elastomer is preferable from the viewpoints of expandability and substrate whisker suppression.

The intermediate layer 13 may have a single-layer structure or a multilayer structure.

In addition, the elongation at break of the entire intermediate layer 13 at 80 ° C is preferably 40% or more and 750% or less. Here, the dicing film for a semiconductor wafer is exposed to a high temperature of 80 ° C. or higher due to frictional heat with the dicing blade during the dicing step. In such a high-temperature state, the resin layer in the contact portion with the cutting blade is in a soft and easy-to-elongate state, and the chips are stretched by the rotation of the cutting blade to be elongated, which is one of the reasons for the occurrence of substrate whiskers in the cutting step. In this regard, in the dicing film 110 for semiconductor wafers of the present invention, if the elongation at break of the entire intermediate layer 13 at 80 ° C is 40% or more and 750% or less, it is difficult to become a soft and easy-to-elongate state at a high temperature. The cutting step can suppress the occurrence of substrate whiskers. The elongation at break of the entire intermediate layer 13 at 80 ° C is not limited as long as it is 40% or more and 750% or less. It is preferably 60% or more and 600% or less, and more preferably 80% or more and 400% or less. . This allows the aforementioned effects to be more prominently exhibited.

Here, it is preferable that the intermediate layer 13 is substantially free of an antistatic agent for the entire intermediate layer 13. The aforementioned “the intermediate layer 13 does not substantially contain an antistatic agent” means that the content of the antistatic agent is 3% by weight or less based on the entire intermediate layer 13. That is, the intermediate layer 13 may contain a trace amount of an antistatic agent. The content of the aforementioned antistatic agent is preferably 1% by weight or less, and more preferably 0.5% by weight or less. This makes it possible to suppress occurrence of substrate whiskers during cutting.

The thickness of the entire intermediate layer 13 is not particularly limited. For example, it is preferably 10 μm or more and 70 μm or less, more preferably 20 μm or more and 60 μm or less, and more preferably 25 μm or more and 50 μm or less. Thereby, it is easier to make the thickness of the adhesive layer 12 within the aforementioned range and simultaneously set the distance between the surface of the adhesive layer 12 side of the substrate 11 and the surface of the adhesive layer 12 opposite to the substrate (L ) Is set within the aforementioned range.

The antistatic agent is not particularly limited as long as it has antistatic properties. Examples of the antistatic agent include high molecular antistatic agents such as polyether / polyolefin block polymers or polyetheresteramine block polymers, or Carbon black and so on.

The substrate 11, the adhesive layer 12, and the intermediate layer 13 may have a single-layer structure or a multilayer structure. For example, when the substrate 11 has a multilayer structure, as shown in FIG. 4, the substrate 11 may include a first substrate 111 and a second substrate 112.

The thickness of the entire semiconductor wafer dicing film 110 is not particularly limited. For example, it is preferably 60 μm or more and 280 μm or less, more preferably 70 μm or more and 230 μm or less, and more preferably 80 μm or more and 220 μm or less. The thickness of the entire dicing film 110 for a semiconductor wafer is within the aforementioned range, and can be fixed and expanded when a wafer is handled.

The dicing film 110 for a semiconductor wafer may be provided with another resin layer depending on the purpose, as long as the effect of the present invention is not impaired.

<An example of a method for manufacturing a dicing film for semiconductor wafers> The adhesive layer 12 of the dicing film 110 for semiconductor wafers of the present invention is roll-coated with a substrate 11 or a resin film containing the substrate 11 A coating solution obtained by dissolving or dispersing a resin used as the adhesive layer 12 in an appropriate solvent is applied by a known coating method such as gravure coating and dried to form it.

Next, a third embodiment of the present invention will be described.揭示 This disclosure is based on the insight that in the cutting step, a part of the cutting film is cut along with the semiconductor member, and a part of the cutting film is melted due to frictional heat, so that cutting chips are generated. In addition, the present disclosure is based on the insight that a cutting blade is cut into the surface by providing a surface layer containing a polystyrene resin and a vinyl aromatic hydrocarbon-conjugated diene copolymer or a hydride thereof on a substrate layer. Layer, which can significantly reduce cuttings.

That is, the present disclosure relates to a substrate film for cutting, which includes a base material layer and a surface layer disposed on one of the main surfaces of the base material layer, the surface layer containing a polystyrene resin, and A vinyl aromatic hydrocarbon-conjugated diene copolymer or a hydrogenated product thereof, and the content of the polystyrene resin in the surface layer exceeds 50% by weight.

The base film for cutting according to the present disclosure can provide a base film for cutting which is excellent in expandability and resilience and has a high effect of suppressing chip formation during cutting in one or more embodiments.

Hereinafter, the dicing base film of the present disclosure will be described in detail.

FIG. 5 is a schematic cross-sectional view showing an example of the configuration of a dicing base film of the present disclosure. As shown in FIG. 5, the dicing base film 1010 of the present disclosure includes a base material layer 1011 and a surface layer 1012 arranged on one of the main surfaces of the base material layer 1011. By further providing an adhesive layer 1013 on the surface layer 1012 of the cutting base film 1010, a cutting film 1020 can be obtained.

Hereinafter, each layer constituting the dicing base film of the present disclosure will be described in detail.

<Surface layer> (1) In one or most embodiments, the surface layer constituting the cutting base film of the present disclosure is a cutting layer cut by a cutting blade. The surface layer contains a polystyrene resin and a vinyl aromatic hydrocarbon-conjugated diene copolymer or a hydrogenated product thereof.

[Polystyrene resin] The polystyrene resin is not particularly limited. In one or more embodiments, general polystyrene resin, impact-resistant polystyrene resin, or a mixture thereof may be mentioned. In the present disclosure, "general-purpose polystyrene" generally refers to a styrene homopolymer. In addition, "impact-resistant polystyrene" generally refers to those in which rubber components such as butadiene are added to general-purpose polystyrene. In one or most embodiments, fine rubber-like particles are contained in a polystyrene matrix. Blended or graft polymerized structures.

The content of the polystyrene resin in the surface layer is preferably more than 50% by weight, and more preferably 60% by weight, from the viewpoint of improving the blocking resistance and suppressing the occurrence of chippings in one or more embodiments. From the viewpoint of improving film expandability and resilience, it is preferably 85% by weight or less, and more preferably 80% by weight or less.

[Vinyl aromatic hydrocarbon-conjugated diene copolymer] In the present disclosure, the vinyl aromatic hydrocarbon refers to an aromatic hydrocarbon having at least one vinyl group. Examples of vinyl aromatic hydrocarbons include styrene, α-methylstyrene, p-methylstyrene, divinylbenzene, 1,1-diphenylethylene, and N, N in one or more embodiments. -Dimethyl-p-aminoethylstyrene, N, N-diethyl-p-aminoethylstyrene, and the like. These can be used individually by 1 type or in mixture of 2 or more types. Among these, styrene is preferred.

A conjugated diene means a diene having a pair of conjugated double bonds. In one or more embodiments, the conjugated diene includes 1,3-butadiene, 2-methyl-1,3-butadiene (isoprene), 2,3-dimethyl-1, 3-butadiene, 1,3-pentadiene, 2-methyl-1,3-pentadiene, 1,3-hexadiene, and the like. These can be used individually by 1 type or in mixture of 2 or more types. Among these, 1,3-butadiene is preferred.

The vinyl aromatic hydrocarbon-conjugated diene copolymer is preferably a hydride from the viewpoint of suppressing oxidative degradation and the like due to the presence of a double bond in the conjugated diolefin and improving film strength.

It is preferred that the vinyl aromatic hydrocarbon-conjugated diene copolymer is saturated with a double bond derived from a conjugated diene in advance by a known method (for example, hydrogenation using a nickel catalyst or the like). This makes it possible to obtain a more stable resin which is excellent in heat resistance, chemical resistance, and durability in addition to the aforementioned effects.

The hydrogenation rate of the hydride of the vinyl aromatic hydrocarbon-conjugated diene copolymer is, in one or more embodiments, 85% or more, 90%, or 95% of the double bond derived from the conjugated diene in the copolymer. %the above. The hydrogenation rate can be measured using a nuclear magnetic resonance apparatus (NMR).

The content of the vinyl aromatic hydrocarbon unit in the vinyl aromatic hydrocarbon-conjugated diene copolymer is one or more of the embodiments from the viewpoint of improving compatibility with a polystyrene resin and improving film expandability. , Preferably 10 to 50% by weight, and more preferably 15 to 45% by weight. In addition, the content of the conjugated diene unit is from 50 to 90% by weight, or from 55 to 85, based on the content before hydrogenation in one or more embodiments from the viewpoint of improving the film expandability and blocking resistance. weight%.

The weight average molecular weight (Mw) of the vinyl aromatic hydrocarbon-conjugated diene copolymer or its hydride is, in one or most embodiments, 10,000 to 600,000, or 50,000 to 300,000. The weight average molecular weight can be measured using a commercially available standard gel permeation chromatography (GPC).

The content of the vinyl aromatic hydrocarbon-conjugated diene copolymer or its hydride in the resin component forming the surface layer is preferably one or more embodiments from the viewpoint of improving film expandability and resilience. 15% by weight or more, more preferably 20% by weight or more. From the viewpoint of improving the blocking resistance and suppressing the generation of chips, it is preferably 50% by weight or less, more preferably less than 50% by weight, and still more preferably 40% by weight or less.

The vinyl aromatic hydrocarbon-conjugated diene copolymer may be in the form of a random copolymer of a styrene-based monomer and a diene-based monomer. Alternatively, it may be in the form of a block copolymer of a styrene-based monomer and a diene-based monomer. Alternatively, it may be in a form including both a random copolymer and a block copolymer. The content of the styrene-based monomer unit can be measured using an ultraviolet spectrophotometer or a nuclear magnetic resonance device (NMR), and the content of the diene-based monomer unit can be measured using a nuclear magnetic resonance device (NMR).

The random copolymer and its hydride can be produced in one or many embodiments by a method described in Japanese Patent Application Laid-Open No. 2004-59741 and the like.

As one or more embodiments of the block copolymer, there may be mentioned those having a block segment derived from a vinyl aromatic hydrocarbon at one or both ends of the copolymer and further a block segment derived from a conjugated diene. , Or blending them. Specific examples include a styrene-ethylene-butadiene-styrene copolymer (hereinafter also referred to as SEBS). The content of the styrene constituent unit in SEBS (hereinafter also referred to as St content) is preferably 10% by weight or more from the viewpoint of improving the compatibility with the polystyrene resin and improving the film forming property of the film. It is preferably 15% by weight or more, and from the viewpoint of expanding film expandability, 50% by weight or less is more preferable, and 45% by weight or less is more preferable.

The surface layer may contain an antistatic agent, a filler, and the like in one or many embodiments within a range that does not damage the gist of the invention.

From the viewpoint of reducing cutting chips, the thickness of the surface layer is preferably thicker than the depth that the cutting blade cuts into the surface layer (hereinafter also referred to as the cutting amount). The thickness of the surface layer is, in one or most embodiments, 5 to 60 μm, or 20 to 40 μm. The thickness of the surface layer is 5 to 60% or 20 to 40% of the thickness of the base film for cutting in one or more embodiments.

<Base material layer> (1) As the base material layer constituting the dicing base film of the present disclosure, in one or more embodiments, an expansion layer that has been used in the past or may be developed in the future can be used. Examples of the resin material include polyolefin resins such as polyvinyl chloride, polyethylene, polypropylene, polybutene, polybutadiene, and polymethylpentene; ethylene / vinyl acetate copolymers, ion Polymers, olefin copolymers such as ethylene / (meth) acrylic acid copolymers and ethylene / (meth) acrylate copolymers; polymers such as polyethylene terephthalate and polybutylene terephthalate Terephthalate-based resins; thermoplastic resins such as styrene-based thermoplastic elastomers, olefin-based thermoplastic elastomers, polyvinyl isoprene, polycarbonate, or mixtures of these thermoplastic resins; etc. Among these, a mixture of polypropylene and an elastomer, or a mixture of polyethylene and an elastomer is preferable. By using such a resin material, excellent expandability can be obtained.

The base material layer may contain an antistatic agent, a filler, or the like within one or more embodiments within a range that does not impair the physical properties of the film.

The thickness of the base material layer is 40 to 95 μm, or 60 to 80 μm from the viewpoint of ensuring the strength that the film does not break when the film is stretched in the expansion step in one or more embodiments. The thickness of the base material layer is 40 to 95% or 60 to 80% of the thickness of the base film for cutting in one or more embodiments.

The cutting base film of the present disclosure may have an intermediate layer between the substrate layer and the surface layer in one or more embodiments from the viewpoint of improving the production yield.

<Intermediate layer> (1) The intermediate layer is, in one or most embodiments, a layer that a cutting blade does not cut into.

As a resin component forming the intermediate layer, in one or more embodiments, it is preferable to contain a vinyl aromatic hydrocarbon-conjugated dimer from the viewpoint of improving the adhesion between the substrate layer and the surface layer without reducing the spreadability of the film. An olefin copolymer or a hydride thereof is preferred. The vinyl aromatic hydrocarbon-conjugated diene copolymer or a hydrogenated product thereof may be the same as the surface layer described above, and a detailed description thereof is omitted here.

In addition, as the resin component forming the intermediate layer, in one or more embodiments, in addition to the above-mentioned vinyl aromatic hydrocarbon-conjugated diene copolymer or a hydrogenated product thereof, a polystyrene resin or a base material layer may be further contained. Other resin components such as resin components. The same can be used for the polystyrene resin as the surface layer. The resin components constituting the base material layer have already been described above, and detailed descriptions thereof are omitted here.

When the intermediate layer contains a vinyl aromatic hydrocarbon-conjugated diene copolymer or a hydride thereof and other resin components, from the viewpoint of suppressing a decrease in the spreadability of the film and improving the adhesion between the substrate layer and the surface layer, The content ratio of the vinyl aromatic hydrocarbon-conjugated diene copolymer or its hydride is 50% by weight or more, or 60% by weight or more, and 100% by weight or less, or 90% by weight or less.

The thickness of the intermediate layer is, in one or most embodiments, 5 to 60 μm, or 20 to 40 μm.

The overall thickness of the dicing base film of the present disclosure is 50 to 200 μm or 80 to 150 μm in one or more embodiments. When the entire thickness of the dicing base film is 50 μm or more, the wafer can be protected from impact when the wafer is diced. In the case where the base film for cutting has an intermediate layer, in one or most embodiments, the thickness of the base layer is made thin without changing the thickness of the surface layer, and the entire thickness of the film is set to the range described above. Inside.

As a method for manufacturing the base film for cutting disclosed in this disclosure, a known method such as an extrusion method or a roll pressing method using a T die or a ring die may be used. However, from the viewpoint of the thickness accuracy of the base film, it is preferable to use a T die. The head extrusion method is preferred.

The following explains the extrusion method using a T die.

First, the resin components constituting the surface layer and the base material layer are dry-blended or melt-kneaded, respectively, to obtain a resin for forming each layer. Each layer forming resin was supplied to a screw extruder, extruded from a multilayer T die adjusted to 180 to 240 ° C into a film shape, and passed through a cooling roll adjusted to 10 to 50 ° C, and simultaneously cooled and rolled. Around. Alternatively, the resin for forming each layer may be obtained in the form of pellets, and then extruded into a shape as described above. The thickness of each layer formed can be adjusted by adjusting the screw speed of the extruder.

In the step of cooling and winding the film while passing through the cooling roller, from the viewpoint of ensuring the strength of the film not to be cracked during expansion and improving the recovery after expansion, it is preferable to wind the film substantially without stretching. Substantially no extension means that no active extension is implemented, including: no extension, or a slight extension to the extent that it does not affect the warpage of the wafer during dicing. Generally, when the film is wound, it is sufficient to stretch the film so as not to cause slack.

In one or many embodiments of the dicing substrate film of the present disclosure, as shown in FIG. 5, by providing an adhesive layer 1013 on the surface layer 1012, the dicing film 1020 of the present disclosure can be formed.

<Adhesive layer> The adhesive layer is not particularly limited as long as it is attached to a semiconductor component and can easily peel off the singulated semiconductor component after dicing, and it is preferably an acrylic adhesive or ultraviolet curable amine A resin composition such as an ester acrylate resin and an isocyanate-based crosslinking agent is preferred. Thereby, the semiconductor component can be fully held before dicing, and the holding force (adhesive force) of the adhesive can be reduced by performing ultraviolet irradiation before picking up the singulated semiconductor component, thereby facilitating picking.

In one or many embodiments, the thickness of the adhesive layer is preferably 2 μm or more, and more preferably 3 μm or more, from the viewpoint of improving the adhesion with the semiconductor member. From the viewpoint of improving workability at the time of cutting, the thickness is preferably 30 μm or less, and more preferably 15 μm or less.

The manufacturing method of the dicing film disclosed in the present disclosure includes, in one or more embodiments, the following method: a coating solution obtained by dissolving or dispersing a resin composition forming an adhesive layer in an appropriate solvent is roll-coated or photogravure A known coating method such as coating is a method in which the surface layer of the base film for cutting is applied and dried to form an adhesive layer.

In one or more embodiments, the cutting film of the present disclosure may further have a protective layer on the adhesive layer.

<Protective layer> The protective layer is not particularly limited as long as it protects the adhesive layer until the dicing film is used and can be easily removed when the dicing film is used. The protective layer is preferably a film made of polyester resin, polyethylene resin, polypropylene resin, polystyrene resin, etc. in one or many embodiments from the viewpoint of improving workability when the cutting film is used. Better.

The protective layer, in one or more embodiments, may also be subjected to a release treatment on the surface contacting the adhesive layer. In this case, the protective layer can be more easily removed when the cutting film is used. As a method of a mold release process, in one or many embodiments, the method of apply | coating a mold release resin, such as a silicone resin and an alkyd resin, is mentioned.

The manufacturing method of the semiconductor wafer of the present disclosure includes, in one or more embodiments, a method including the following steps: an attaching step, which attaches the dicing film and the semiconductor member of the present disclosure; a cutting step, which cuts and cuts the aforementioned semiconductor member An expansion step, which expands the aforementioned dicing film, and expands the gap between the adjacent singulated semiconductor components; a picking step, which picks up the singulated semiconductor components.

In the attaching step, in one or more embodiments, a commercially available mounter or the like is used to attach the adhesive layer of the dicing film and the semiconductor component. When the dicing film has a protective layer, the dicing film and the semiconductor member can be attached while removing the protective layer.

In the dicing step, in one or more embodiments, a semiconductor device is cut using a commercially available dicing machine and singulated.

In the expansion step, in one or more embodiments, a commercially available expansion device or the like is used to increase the interval between adjacent singulated semiconductor components. Thereby, the pick-up step in the latter stage can be conveniently performed.

In the picking-up step, in one or more embodiments, a commercially available die bonder or the like is used to pick up the singulated semiconductor components, thereby obtaining a semiconductor wafer.

The manufacturing method of the semiconductor wafer disclosed in the present disclosure may, in one or more embodiments, after the expansion step, may also include a commercially-available objective microscope and the like to inspect the semiconductor components that have been singulated through a cutting film and perform a visual inspection. step. With this, it is possible to detect whether or not the singulated semiconductor component has a defective portion, so that productivity can be improved.

In one or more embodiments of the method for manufacturing a semiconductor wafer disclosed herein, when the adhesive layer contains an ultraviolet-curable urethane acrylate resin or the like, it may include an ultraviolet irradiation step before the pickup step. Thereby, the ultraviolet rays are irradiated before the picking step, so that the holding force of the adhesive layer is reduced, and the picking can be facilitated. [Example]

The first embodiment will be described in more detail with reference to the examples, but this is merely an example, and the present invention is not limited thereto.

(Example 1) <Production of base material> As a material constituting the base material 1, 99 parts by weight of low-density polyethylene (LDPE, density 919 kg / m ³ , MFR1.2) and powdered polytetrafluoroethylene (PTFE) were prepared. 1 part by weight, after preliminary mixing with a rolling mixer, melt-kneading and granulation with a biaxial kneader having a adjusted cylinder temperature of 200 ° C. to obtain pellets of a resin mixture. The obtained pellets were extruded into a sheet shape using an extruder with an adjusted die temperature of 200 ° C. to obtain a sheet having a thickness of 100 μm. Then, the adhesive-coated surface was subjected to a corona treatment.

<Production of Adhesive Layer> As a base polymer of the adhesive layer, 30 parts by weight of 2-ethylhexyl acrylate, 70 parts by weight of vinyl acetate, and 3 parts by weight of 2-hydroxyethyl methacrylate were used. The copolymer (weight average molecular weight: 300,000) obtained by polymerization was 42% by weight.

47% by weight of a urethane acrylate having a weight average molecular weight of 5000 and a polymerizable functional group of 4 was prepared as a hardening component of the adhesive layer, and 2,2-dimethoxy-1,2-diphenylethane- 1-ketone (trade name "Irgacure651", manufactured by Ciba Japan Co., Ltd.) 3% by weight was used as a photopolymerization initiator for the adhesive layer. A polyisocyanate compound (trade name "Coronate L", manufactured by Nippon Polyurethane Industry Co., Ltd.) was used as an isocyanate-based crosslinking agent as an adhesive layer in an amount of 8% by weight.

The base polymer, the hardening component, the photopolymerization initiator, the cross-linking agent, and the ethyl acetate in a total amount of 2 times were stirred at room temperature for 15 minutes to prepare a mixed solution. This mixed solution was rod-coated on a substrate so that the thickness of the dried adhesive layer was 10 μm, and then dried at 80 ° C. for 5 minutes to obtain a desired cutting film.

(Example 2) Except the following, it carried out similarly to Example 1, and obtained the dicing film sheet 3. As a substrate, 90 parts by weight of low-density polyethylene (LDPE, density 923 kg / m ³ , MFR3.7), styrene-isoprene-styrene-block copolymer (SIS, styrene content 12%, MFR0.5) 10 parts by weight.

(Example 3) Except the following, it carried out similarly to Example 1, and obtained the dicing film sheet 3. As a base material, 99 parts by weight of low-density polyethylene (LDPE, density 923 kg / m ³ , MFR3.7) and 1 part by weight of powdered polytetrafluoroethylene (PTFE) were prepared.

(Example 4) Except the following, it carried out similarly to Example 1, and obtained the dicing film sheet 3. As a base material, 99 parts by weight of low-density polyethylene (LDPE, density 922 kg / m ³ , MFR 2.0) and 1 part by weight of powdered polytetrafluoroethylene (PTFE) were prepared.

(Example 5) Except the following, it carried out similarly to Example 1, and obtained the dicing film sheet 3. As a base material, 98 parts by weight of low-density polyethylene (LDPE, density 922 kg / m ³ , MFR 2.0) and 2 parts by weight of powdered polytetrafluoroethylene (PTFE) were prepared.

(Example 6) Except the following, it carried out similarly to Example 1, and obtained the dicing film sheet 3. As a substrate, 60 parts by weight of polypropylene (PP, density 910kg / m ³ , MFR2.4), styrene-isoprene-styrene · block copolymer (SIS, styrene content 12%, MFR0. 5) 40 parts by weight.

(Example 7) Except the following, it carried out similarly to Example 1, and obtained the dicing film sheet 3. As a substrate, 59 parts by weight of polypropylene (PP, density 910kg / m ³ , MFR2.4), styrene-isoprene-styrene · block copolymer (SIS, styrene content 12%, MFR0. 5) 40 parts by weight and 1 part by weight of powdery polytetrafluoroethylene (PTFE).

(Comparative example 1) Except the following, it carried out similarly to Example 1, and obtained the dicing film sheet 3. As the base material, a high-density polyethylene (HDPE, density 954 kg / m ³ , MFR1.4, trade name “Suntec B161”, manufactured by Asahi Kasei Chemical Co., Ltd.) was prepared, and an extruder having a die temperature of 200 ° C. It was extruded into a sheet shape to obtain a sheet having a thickness of 100 μm. After that, the adhesive-coated surface is subjected to a corona treatment.

(Comparative example 2) Except the following, it carried out similarly to Example 1, and obtained the dicing film sheet 3. As the substrate, a linear low-density polyethylene (LLDPE, density 919 kg / m ³ , MFR 2.0, trade name “ULT-ZEX 2022L”, manufactured by Primepolymer Co., Ltd.) was prepared, and the die temperature was adjusted to 200 ° C. The extruder was extruded into a sheet shape to obtain a sheet having a thickness of 100 μm. Then, the adhesive-coated surface was subjected to a corona treatment.

(Comparative example 3) Except the following, it carried out similarly to Example 1, and obtained the dicing film sheet 3. As a substrate, 99 parts by weight of polypropylene (PP, density 919 kg / m ³ , MFR 2.5) and 1 part by weight of powdered polytetrafluoroethylene (PTFE) were prepared.

<Measurement of Melt Tension> (1) Melt tension refers to the tension that occurs when a heated or molten resin is stretched. Melting tension is measured using the prepared kneaded pellets as a sample, using a capillary viscometer with a furnace diameter of 9.55 mm, a capillary length of 10 mm, and a capillary diameter of 1 mm (trade name "CAPILOGRAPH1C", manufactured by Toyo Seiki Co., Ltd.). Melting tension refers to setting the furnace temperature to 200 ° C, the piston speed to 10 mm / min, and the pulling speed to 5 m / min. The load (mN) necessary for pulling is defined as the melting tension.

<Measurement of Elongation at Break (23 ° C)> Elongation at break refers to the elongation length at the maximum force that can be withstood when the film is stretched. The elongation at break at 23 ° C is measured at 23 ° C in a MD direction and a tensile speed of 200 mm / min using a Tensilon universal testing machine in accordance with JISK6734.

<Measurement of elongation at break (80 ° C) The elongation at break at 80 ° C is at 80 ° C. Prepare short strip-shaped samples with a width of 6mm and a length of 50mm. Use a Tensilon universal testing machine in the MD direction and tensile speed The measurement was performed at 200 mm / min.

<Evaluation of substrate whiskers> A 4 inch silicon wafer (thickness: 200 μm) was attached to the produced dicing film and cut with a dicing blade (product name "DAD3350", manufactured by Disco Corporation) under the following conditions. , Observe the surface of the silicon wafer, and count the number of substrate whiskers with a length of 100 μm or more from the cutting line. Judgment criteria ◎: 0 ~ 5 pieces ○: 6-10 pieces ×: 11 pieces or more

<Cutting conditions> Blade "NBC-ZH2050 27HEDD", manufactured by Disco Corporation Blade rotation speed 55,000rpm Cutting speed 50mm / sec 入 Cut amount 30μm from the surface of the cutting film Cutting size × 3mm × 3mm

【Table 1】

As shown in Table 1, it can be seen that, compared with the cutting films of Comparative Examples 1 to 3, the cutting film of Examples 1 to 7 has a higher effect of suppressing the occurrence of substrate whiskers. For example, in Example 3, the melting tension of the substrate at 200 ° C is 80 mN or more. Compared with Comparative Examples 1 to 3, where the melting tension of the substrate at 200 ° C is less than 80 mN, the occurrence of substrate whiskers can be greatly reduced. It can be seen that in order to suppress the occurrence of whiskers on the substrate, it is important that the melt tension of the substrate at 200 ° C is 80 mN or more. In addition, Examples 2 and 5 in which the elongation at break of the substrate at 80 ° C is 750% or less can significantly reduce the whisker shape of the substrate compared to Comparative Examples 1 to 3 where the elongation at break of the substrate at 80 ° C exceeds 750%. It is known from this that in order to suppress the occurrence of whiskers on the substrate, it is important to make the elongation at break of the substrate at 80 ° C be 750% or less.

Next, the second embodiment will be described in more detail according to the examples, but it is only an example, and the present invention is not limited thereby. (Example 8) <Production of cut tape> As a material constituting the base material, 85 parts by weight of low-density polyethylene F522N (made by Ube Maruzen Polyethylene) and 15 parts by weight of Pelestat 230 (manufactured by Sanyo Chemical Industries) were prepared. After dry blending, a Φ50mm extruder (L / D = 25 unimelt pin screw compression ratio = 2.9), a coat hanger die with a width of 300mm (lip lip gap = 0.5mm), and extruded The film was extruded under the conditions of temperature = 220 ° C (tip of the screw) to obtain a sheet having a thickness of 100 μm. Then, the adhesive-coated surface was subjected to a corona treatment.

As a base polymer of the adhesive layer, a copolymer obtained by copolymerizing 30 parts by weight of 2-ethylhexyl acrylate, 70 parts by weight of vinyl acetate, and 3 parts by weight of 2-hydroxyethyl methacrylate (weight average) The molecular weight is 300000) 42% by weight.

As a curing component of the adhesive layer, 47% by weight of a urethane acrylate having a weight average molecular weight of 5000 and a polymerizable functional group of 4 was prepared. As a photopolymerization initiator of the adhesive layer, 2,2-dimethoxy-1,2-diphenylethane-1-one (trade name "Irgacure651") 3% by weight was prepared. As an isocyanate-based crosslinking agent of the adhesive layer, a polyisocyanate compound (trade name "Coronate L") was prepared in an amount of 8% by weight.

The base polymer, the hardening component, the photopolymerization initiator, and the cross-linking agent of the above-mentioned adhesive layer were mixed together with 2 times the total amount of ethyl acetate to prepare a resin solution. This resin solution was applied to a substrate so that the thickness of the dried adhesive layer was 60 μm, and then dried at 80 ° C. for 1 minute to obtain a desired cutting tape. (Example 9) Except that the following was performed in the same manner as in Example 8 to obtain a dicing tape. As an intermediate layer, 100 parts by weight of low-density polyethylene F522N (made by Ube Maruzen Polyethylene) was prepared, and 85 parts by weight of low-density polyethylene F522N (made by Ube Maruzen polyethylene) and Pelestat 230 (Sanyo Kasei) were prepared as a material constituting the base material. (Industrial) 15 parts by weight. After the two are dry blended, the intermediate layer and the base material are extruded together with a Φ50mm extruder (L / D = 25 螺杆 Unimelt pin screw compression ratio = 2.9) and a 300mm wide manifold hanger The film was extruded under the conditions of a die (lip gap = 0.5 mm) and extrusion temperature = 220 ° C (front end of the screw) to obtain a sheet having a total thickness of 100 μm with an intermediate layer of 50 μm and a substrate of 50 μm. Then, the adhesive-coated surface was subjected to a corona treatment. The base polymer, the hardening component, the photopolymerization initiator, the cross-linking agent, and the ethyl acetate in a total amount of 2 times were mixed together to prepare a resin solution. This resin solution was applied to a substrate so that the thickness of the dried adhesive layer was 10 μm, and then dried at 80 ° C. for 1 minute to obtain a desired dicing tape.

(Example 10) Except for the following, 与 was performed in the same manner as in Example 8 to obtain a dicing tape. As an intermediate layer, 100 parts by weight of low-density polyethylene F522N (made by Ube Maruzen Polyethylene) was prepared, and 85 parts by weight of low-density polyethylene F522N (made by Ube Maruzen polyethylene) and Pelestat 230 (Sanyo Kasei) were prepared as a material constituting the base material. Industrial) 15 parts by weight. After dry-blending the two, the intermediate layer and the base material are Φ50mm extruder (L / D = 25 Unimelt pin screw compression ratio = 2.9) and a multi-manifold hanger type of 300mm wide The film was extruded under the conditions of a die (lip gap = 0.5 mm) and extrusion temperature = 220 ° C (front end of the screw) to obtain a sheet having a total thickness of 100 μm with an intermediate layer of 25 μm and a substrate of 75 μm. Then, the adhesive-coated surface was subjected to a corona treatment. The base polymer, the hardening component, the photopolymerization initiator, the cross-linking agent, and the ethyl acetate in a total amount of 2 times were mixed together to prepare a resin solution. This resin solution was applied to a substrate so that the thickness of the dried adhesive layer was 10 μm, and then dried at 80 ° C. for 1 minute to obtain a desired dicing tape.

(Example 11) Except the following, the same procedure as in Example 8 was performed to obtain a dicing tape. As an intermediate layer, 100 parts by weight of low-density polyethylene F522N (made by Ube Maruzen Polyethylene) was prepared, and 85 parts by weight of low-density polyethylene F522N (made by Ube Maruzen polyethylene) and Pelestat 230 (Sanyo Kasei) were prepared as a material constituting the base material. Industrial) 15 parts by weight. After dry-blending the two, the intermediate layer and the base material are Φ50mm extruder (L / D = 25 Unimelt pin screw compression ratio = 2.9) and a multi-manifold hanger type with a width of 300mm. The film was extruded under the conditions of a die (lip gap = 0.5 mm) and extrusion temperature = 220 ° C. (screw tip) to obtain a sheet having a total thickness of 100 μm with an intermediate layer of 35 μm and a substrate of 65 μm. Then, the adhesive-coated surface was subjected to a corona treatment. The base polymer, the hardening component, the photopolymerization initiator, the cross-linking agent, and the ethyl acetate in a total amount of 2 times were mixed together to prepare a resin solution. This resin solution was applied to a substrate so that the thickness of the dried adhesive layer was 10 μm, and then dried at 80 ° C. for 1 minute to obtain a desired dicing tape.

(Example 12) Except the following, the same procedure as in Example 8 was performed to obtain a dicing tape. As an intermediate layer, 100 parts by weight of low-density polyethylene F522N (made by Ube Maruzen Polyethylene) was prepared. As a material constituting the first base material, 85 parts by weight of low-density polyethylene F522N (made by Ube Maruzen polyethylene) and Pelestat 230 ( 15 parts by weight of Sanyo Kasei Industrial Co., Ltd. was dry-blended to prepare 100 parts by weight of low-density polyethylene F522N (made by Ube Maruzen Polyethylene) as a material constituting the second substrate, and the intermediate layer, the first substrate, and the second substrate were prepared. Material together with a Φ50mm extruder (L / D = 25 Unimelt pin screw compression ratio = 2.9), a 300mm wide manifold hanger type die (die lip gap = 0.5mm), extrusion temperature = 220 ° C (front end of the screw) ) Under conditions of extrusion) to obtain a sheet having a total thickness of 100 μm with an intermediate layer of 30 μm, a first substrate of 40 μm, and a second substrate of 30 μm. Then, the adhesive-coated surface was subjected to a corona treatment. The base polymer, the hardening component, the photopolymerization initiator, the cross-linking agent, and the ethyl acetate in a total amount of 2 times were mixed together to prepare a resin solution. This resin solution was applied to a substrate so that the thickness of the dried adhesive layer was 10 μm, and then dried at 80 ° C. for 1 minute to obtain a desired dicing tape.

(Example 13) Except the following, 与 was performed in the same manner as in Example 8 to obtain a dicing tape. As an intermediate layer, 100 parts by weight of low-density polyethylene F522N (made by Ube Maruzen Polyethylene) was prepared. As a material constituting the first base material, 85 parts by weight of low-density polyethylene F522N (made by Ube Maruzen polyethylene) and Pelestat 230 ( 15 parts by weight of Sanyo Kasei Industrial Co., Ltd. was dry-blended to prepare 100 parts by weight of low-density polyethylene F522N (made by Ube Maruzen Polyethylene) as a material constituting the second substrate, and the intermediate layer, the first substrate, and the second substrate were prepared. Material together with a Φ50mm extruder (L / D = 25 Unimelt pin screw compression ratio = 2.9), a 300mm wide manifold hanger type die (die lip gap = 0.5mm), extrusion temperature = 220 ° C (front end of the screw) The film was extruded under the conditions of) to obtain a sheet having a total thickness of 100 μm with an intermediate layer of 50 μm, a first substrate with 20 μm, and a second substrate with 30 μm. Then, the adhesive-coated surface was subjected to a corona treatment. The base polymer, the hardening component, the photopolymerization initiator, the cross-linking agent, and the ethyl acetate in a total amount of 2 times were mixed together to prepare a resin solution. This resin solution was applied to a substrate so that the thickness of the dried adhesive layer was 10 μm, and then dried at 80 ° C. for 1 minute to obtain a desired dicing tape.

(Example 14) Except for the following, the same procedure as in Example 8 was performed to obtain a dicing tape. As an intermediate layer, 100 parts by weight of low-density polyethylene F522N (made by Ube Maruzen Polyethylene) was prepared, and 85 parts by weight of low-density polyethylene F522N (made by Ube Maruzen polyethylene) and Pelestat 230 (Sanyo Kasei) were prepared as a material constituting the base material. Industrial) 15 parts by weight. After dry blending the two, the intermediate layer and the base material are extruded together in a 50mm extruder (L / D = 25 Unimelt pin screw compression ratio = 2.9) and a 300mm wide manifold hanger type. The film was extruded under the conditions of a die (lip gap = 0.5mm) and extrusion temperature = 220 ° C (front end of the screw) to obtain a sheet having a total thickness of 100 μm with an intermediate layer of 10 μm and a substrate of 90 μm. Then, the adhesive-coated surface was subjected to a corona treatment. The base polymer, the hardening component, the photopolymerization initiator, the cross-linking agent, and the ethyl acetate in a total amount of 2 times were mixed together to prepare a resin solution. This resin solution was applied to a substrate so that the thickness of the dried adhesive layer was 10 μm, and then dried at 80 ° C. for 1 minute to obtain a desired dicing tape. (Comparative Example 4) Except that the following was performed in the same manner as in Example 8 to obtain a dicing tape. The base polymer, the hardening component, the photopolymerization initiator, the cross-linking agent, and the ethyl acetate in a total amount of 2 times were mixed together to prepare a resin solution. This resin solution was applied to a substrate so that the thickness of the dried adhesive layer was 10 μm, and then dried at 80 ° C. for 1 minute to obtain a desired dicing tape.

(Comparative example 5) Except the following, it carried out similarly to Example 8, and obtained the dicing tape. As an intermediate layer, 100 parts by weight of low-density polyethylene F522N (made by Ube Maruzen Polyethylene) was used. In addition, as a material constituting the base material, 85 parts by weight of low-density polyethylene F522N (made by Ube Maruzen Polyethylene) and 15 parts by weight of Pelestat 230 (manufactured by Sanyo Kasei Industrial Co., Ltd.) were prepared. The two were dry-blended, and the intermediate layer, The base material is Φ50mm extrusion machine (L / D = 25 Unimelt pin screw compression ratio = 2.9), 300mm wide manifold hanger type die (die lip clearance = 0.5mm), extrusion temperature = 220 ℃ (screw The film was extruded under the conditions of the front end) to obtain a sheet having a total thickness of 100 μm with an intermediate layer of 95 μm and a substrate of 5 μm. Then, the adhesive-coated surface was subjected to a corona treatment. The base polymer, the hardening component, the photopolymerization initiator, the cross-linking agent, and the ethyl acetate in a total amount of 2 times were mixed together to prepare a resin solution. This resin solution was applied to a substrate so that the thickness of the dried adhesive layer was 10 μm, and then dried at 80 ° C. for 1 minute to obtain a desired dicing tape.

<Evaluation test> (1) Evaluation of substrate scrap after dicing For the produced dicing tape, a wafer (thickness: 0.1 mm) subjected to back grinding (DAG810 manufactured by Disco) was diced under the following conditions, and the wafer was removed. , Observe the surface of the tape, and count the number of substrate chips with a length of 100 μ or more from the cutting line. ◎: 0 ~ 5 pieces ○: 6-10 pieces ×: 11 pieces or more

＜ Cutting conditions ＞ Cutter "DAD─3350", DISCO blade "ZH2050 27HEDD", DISCO blade speed 30,000rpm, 60,000rpm Cutting speed 50mm / sec Cutting distance 30μm from the surface of the adhesive sheet Cutting size 10mm × 10mm Blade cooler 2L / min <Measurement of 1% decay time> For the obtained cut tape, the measurement of 1% decay time was performed according to MIL-B-81705C. Specifically, using an electrostatic decay time measuring device (manufactured by electro-tech system, product name: STATIC DECAY METER MODEL406C), a voltage of 5000 V was applied to the cutting tape, and the cost of attenuating the voltage of the cutting tape 100 from 5000 V to 50 V was measured. time. This measurement is performed from the adhesive side of the dicing tape, and is determined as follows. ◎: less than 0.1sec ○: 0.1-less than 0.5sec △: 0.5-less than 10sec ×: 10sec or more <intermediate layer breaking elongation> (1) tensile test The tensile elongation at 80 ° C will be The middle layer is a Φ50mm extruder (L / D = 25 Unimelt pin screw compression ratio = 2.9), a 300mm wide hanger-type die (die lip gap = 0.5mm), and extrusion temperature = 220 ° C (front end of the screw) The film was extruded under the conditions to obtain a sheet having a thickness of 100 μm. A strip with a width of 6 mm and a length of 50 mm was prepared and stretched at 200 mm / min in the MD direction until it broke, and the elongation at break was determined.

【Table 2】

As shown in Table 2, it can be seen that the dicing tapes of Examples 8 to 14 have higher antistatic effects than the dicing tapes of Comparative Examples 15 to 21, and the occurrence of substrate whiskers during the cutting step in semiconductor manufacturing. less. For example, in Example 14 with a distance (L) of 20 μm or more, compared with Comparative Example 4 with a distance (L) of less than 20 μm, the occurrence of substrate whiskers can be greatly reduced. It can be seen that in order to suppress the occurrence of substrate whiskers It is important that the distance (L) is 20 μm or more. In addition, in Examples 8, 9, and 13 with a distance (L) of 75 μm or less, the decay time of static electricity can be greatly shortened compared to Comparative Example 5 with a distance (L) of more than 75 μm. It can be seen that in order to improve the antistatic effect, It is important that (L) is 75 μm or less.

Next, the third embodiment will be described in more detail with examples, but this is only an example, and the present disclosure is not limited thereto.

<Raw Materials> The raw materials used in the production of the dicing base film of the examples and comparative examples are as follows. -Styrene-butadiene copolymer (HIPS): "H9152" (trade name, manufactured by PS Japan Co., Ltd.)-Hydrogenated product of styrene-ethylene-butadiene-styrene block copolymer (SEBS, St content: 18% by weight): "Tuftec H1062" (trade name, manufactured by Asahi Kasei Chemicals Co., Ltd.) · Polypropylene (PP): "FS2011DG-2" (trade name, manufactured by Sumitomo Chemical Co., Ltd.) Styrene (PS): "HF77" (trade name, manufactured by PS Japan)

(Example 15) H HIPS: 55% by weight and SEBS: 45% by weight were dry-blended with a roller to obtain a resin for forming a surface layer. Further, PP: 60% by weight and SEBS: 40% by weight were dry blended to obtain a resin for forming a base material layer. The obtained resin for forming each layer was supplied to each extruder adjusted to 200 ° C, extruded from a two-layer die at 200 ° C in the order of becoming the surface layer / base material layer, and set at 30 ° C. The cooling roller was cooled and solidified, and wound in a substantially unstretched state to obtain a two-layered dicing base film. In Example 15, the thickness of the surface layer was 40 μm, the thickness of the base material layer was 60 μm, and the thickness of the entire base film for cutting was 100 μm.

(Example 16) The same as Example 15 was carried out except that the content of HIPS was changed to 60% by weight and the content of SEBS was changed to 40% by weight of the resin component forming the surface layer. A two-layered substrate film for cutting was prepared. . In Example 16, the thickness of the surface layer was 40 μm, the thickness of the substrate layer was 60 μm, and the thickness of the entire base film for cutting was 100 μm.

(Example 17) The same as Example 15 was carried out except that the content of HIPS was changed to 70% by weight and the content of SEBS was changed to 30% by weight of the resin component forming the surface layer. A two-layered base film for cutting was prepared. . In Example 17, the thickness of the surface layer was 40 μm, the thickness of the substrate layer was 60 μm, and the thickness of the entire base film for cutting was 100 μm.

(Example 18) The same as Example 15 was carried out except that the content of HIPS was changed to 80% by weight and the content of SEBS was changed to 20% by weight of the resin component forming the surface layer. A two-layered base film for cutting was prepared. . In Example 18, the thickness of the surface layer was 40 μm, the thickness of the base material layer was 60 μm, and the thickness of the entire base film for cutting was 100 μm.

(Example 19) The same procedure as in Example 15 was performed to change the content of HIPS to 85% by weight and the content of SEBS to 15% by weight of the resin component forming the surface layer, to prepare a two-layered base film for cutting. . In Example 19, the thickness of the surface layer was 40 μm, the thickness of the substrate layer was 60 μm, and the thickness of the entire base film for cutting was 100 μm.

(Example 20) Except having replaced the resin component HIPS forming the surface layer with the same amount of PS (60% by weight), it was carried out in the same manner as in Example 16 to prepare a two-layered dicing base film. In Example 20, the thickness of the surface layer was 40 μm, the thickness of the base material layer was 60 μm, and the thickness of the entire base film for cutting was 100 μm.

(Example 21) Except having replaced the resin component HIPS forming the surface layer with the same amount of PS (80% by weight), it was carried out in the same manner as in Example 18 to prepare a two-layered dicing base film. In Example 21, the thickness of the surface layer was 40 μm, the thickness of the substrate layer was 60 μm, and the thickness of the entire base film for cutting was 100 μm.

(Comparative Example 6) The same procedure as in Example 15 was performed except that the content of HIPS was changed to 40% by weight and the content of SEBS was changed to 60% by weight of the resin component forming the surface layer. A two-layered base film for cutting was prepared . In Comparative Example 6, the thickness of the surface layer was 40 μm, the thickness of the substrate layer was 60 μm, and the thickness of the entire base film for cutting was 100 μm.

(Comparative Example 7) Aside from changing the HIPS (content: 100% by weight) of the resin component forming the surface layer, the same procedure as in Example 15 was performed to prepare a two-layered dicing base film. In Comparative Example 7, the thickness of the surface layer was 40 μm, the thickness of the substrate layer was 60 μm, and the thickness of the entire base film for cutting was 100 μm.

(Comparative Example 8) H HIPS: 80% by weight and SEBS: 20% by weight were dry-blended with a roller to obtain a resin composition. The obtained resin composition was supplied to an extruder adjusted to 200 ° C, extruded from a single-layer die adjusted to 200 ° C, cooled and solidified by a cooling roll at 30 ° C, and wound in a substantially non-stretched state. A single-layered dicing substrate film was obtained.

An adhesive layer was provided on the surface layer of each of the cutting base films of Examples 15 to 21 and Comparative Examples 6 to 8 produced in the above-mentioned manner to obtain a cutting film. Specifically, first, 2-ethylhexyl acrylate: 30% by weight, vinyl acetate: 70% by weight, and 2-hydroxyethyl methacrylate: 1% by weight were mixed in a toluene solvent to obtain a weight average molecular weight of 150,000. Base resin. This base resin: 100 parts by weight of a polyhydric alcohol adduct (trade name "Coronate L", manufactured by Japan Polyurethane Co., Ltd.) with cresyl diisocyanate as a crosslinking agent: 10 parts by weight of a solvent After ethyl acetate, a rod coating was applied on the surface layer of the base film for cutting so that the thickness after drying became 10 μm, and then dried at 80 ° C. for 5 minutes to obtain a cutting film.

For the obtained cutting film, evaluation of chip characteristics, expandability, and resilience was performed in the following manner, and the results are shown in Table 3. In addition, Table 3 also shows the thickness of the adhesive layer, the content of the resin component forming the surface layer, the thickness of the surface layer, and the thickness of the base material layer constituting the cutting films of Examples 15 to 21 and Comparative Examples 6 to 8. The content of the resin component, the thickness of the base material layer, and the thickness of the entire base film for cutting.

(Chipping characteristics) The chip characteristics were evaluated in the following manner. First, attach a silicon wafer (thickness: 0.2mm) to the dicing film, cut and observe the cutting line under the following conditions, count the number of cutting chips with a length of 100 μm or more from the cutting line, evaluate the chip characteristics, and evaluate The results are shown in Table 3. Here, when the number of chips is 0 to 5, it is evaluated that the chip characteristics are excellent, and it is recorded as "A" in Table 3. When the number of chips is 6 to 10, it is evaluated that the chip characteristics are good, and it is recorded as "B" in Table 3. When the number of chips is 11 or more, it is evaluated that the chip characteristics are not good, and it is recorded as "C" in Table 3.

[Cutting conditions] Cutting device: "DAD─3350" (trade name, manufactured by DISCO) Cutting blade: "ZH205O 27HEDD" (trade name, manufactured by DISCO) Blade speed: 45000rpm Cutting speed: 50mm / sec Cutting distance: Distance from cutting Diaphragm surface 40μm (cut into the surface layer is 30μm) Cutting size: 10mm × 10mm Blade cooler: 2L / min

(Expansibility and Resilience) For expansion and resilience, the following evaluation was performed. First, the evaluation is performed in the same manner as the above-mentioned chip characteristics. A silicon wafer is attached to the dicing film and dicing is performed. A dicing film in a state where a wafer singulated by dicing is attached to a wafer expansion device (commodity (Named "HS1010", manufactured by HUGLE Co., Ltd.) and expanded with a traction of 6mm.

Regarding the expandability, it was evaluated whether or not the cutting film was broken after 10 minutes from the start of the expansion. The evaluation results are shown in Table 3. Here, when the film was not broken, it was evaluated as having good expandability, and it was recorded as "A" in Table 3. In the case of a membrane rupture, it was evaluated as poor spreadability and recorded as "B" in Table 3.

Regarding resilience, the expansion was stopped after 10 minutes from the start of expansion, and then the amount of slack in the film after being left for 10 minutes was measured, evaluated based on the measurement, and the evaluation results are shown in Table 3. Here, when the amount of slack of the film was 5 mm or less, it was evaluated as having excellent resilience, and it was recorded as "A" in Table 3. When the amount of slack in the film was more than 5 mm and less than 9 mm, it was evaluated as having good resilience, and it was recorded as "B" in Table 3. When the amount of slack of the film was 9 mm or more, it was evaluated as a poor restoration property, and it was recorded as "C" in Table 3.

【table 3】

As shown in Table 3, it can be seen that the cutting membranes of Examples 15 to 21 have higher chipping suppression effects than the cutting membranes of Comparative Examples 6 to 8, and have excellent expandability and resilience. For example, in Example 15 in which the HIPS content in the surface layer exceeds 50% by weight, compared with Comparative Example 6, in which the HIPS content in the surface layer is 50% by weight or less, the occurrence of cutting chips can be greatly reduced. It can be seen that in order to suppress the occurrence of cutting chips It is important that the content of HIPS exceeds 50% by weight. Moreover, Comparative Example 7 which does not contain SEBS has poor resilience. From this, it is understood that in order to obtain sufficient resilience, SEBS is important. In Comparative Example 8 having a single-layer structure, it was broken during expansion, and it was found that in order to obtain sufficient expandability, it is important that the base film for cutting has a two-layer structure. [Industrial availability]

The cutting film of the present invention is excellent in expandability and resilience, and has an antistatic effect in the cutting step during semiconductor manufacturing. At the same time, the substrate whisker and cutting chips are less generated during cutting, and it is ideal as a cutting film. Strength and good appearance, it is suitable as a film for fixing semiconductor components in the cutting step of semiconductor device manufacturing.

1. ． ． Substrate

2. ． ． Adhesive layer

3． ． ． Cutting diaphragm

11. ． ． Substrate

12. ． ． Adhesive layer

13. ． ． middle layer

110. ． ． Dicing film for semiconductor wafer

111. ． ． 1st substrate

112. ． ． 2nd substrate

1010. ． ． Substrate film for cutting

1011. ． ． Substrate layer

1012. ． ． Surface layer

1013. ． ． Adhesive layer

1020. ． ． Cutting diaphragm

FIG. 1 is a schematic cross-sectional view of a cutting film according to a first embodiment of the present invention. FIG. 2 is a schematic cross-sectional view of a dicing film for a semiconductor wafer according to a second embodiment of the present invention. FIG. 3 is a schematic cross-sectional view of a dicing film for a semiconductor wafer according to a second embodiment of the present invention. FIG. 4 is a schematic cross-sectional view of a dicing film for a semiconductor wafer according to a second embodiment of the present invention. Fig. 5 is a schematic cross-sectional view of a cutting substrate according to a third embodiment of the present invention.

Claims (18)

A cutting film comprising: a substrate made of resin and an adhesive layer formed on the substrate; the melting tension of the substrate at 200 ° C is 80 mN or more; and the elongation at break of the substrate at 80 ° C. 750% or less; the elongation at break of the substrate at 23 ° C is 550% or more; the substrate contains a material selected from the group consisting of polyolefin resin, olefin copolymer, and polyalkylene terephthalate At least one of a group consisting of a resin, a styrene-based thermoplastic elastomer, an olefin-based thermoplastic elastomer, a thermoplastic resin, a mixture of two or more of these thermoplastic resins, and a mixture of the thermoplastic resin and the elastomer; The polyolefin-based resin is polyvinyl chloride, polyethylene, polypropylene, polybutene, polybutadiene, or polymethylpentene; the olefin-based copolymer is ethylene · vinyl acetate copolymer, ionic polymer, Or ethylene ‧ (meth) acrylate copolymer; the polyalkylene terephthalate resin-based polyethylene terephthalate, or polybutylene terephthalate; the thermoplastic resin-based poly Vinyl isoprene, Polycarbonate; the adhesive layer comprises a group selected from the group consisting of a rubber-based adhesive, a silicone-based adhesive, an acrylic-based adhesive, a UV-curable urethane acrylate resin, and an isocyanate-based crosslinking agent At least one of them. For example, the cutting film of the first patent application range, wherein the thickness of the substrate is 50-250 μm. For example, the cutting film according to item 1 or 2 of the patent application scope, wherein the adhesive layer contains any one or more of rubber-based, silicone-based, and acrylic-based adhesives. A dicing film for a semiconductor wafer includes a substrate and an adhesive layer formed on one side of the substrate; a surface of the substrate on the adhesive layer side and a surface of the adhesive layer The distance (L) between the opposite sides of the substrate is 20 μm or more and 75 μm or less; there is an intermediate layer between the substrate and the adhesive layer, and the substrate contains a material selected from the group consisting of a polyolefin resin and an olefin resin. Copolymer, polyalkylene terephthalate-based resin, styrene-based thermoplastic elastomer, olefin-based thermoplastic elastomer, thermoplastic resin, a mixture of two or more of the thermoplastic resins, and a mixture of the thermoplastic resin and the elastomer At least one of the group consisting of: the polyolefin-based resin is polyvinyl chloride, polyethylene, polypropylene, polybutene, polybutadiene, or polymethylpentene; the olefin-based copolymer is ethylene‧acetic acid A vinyl ester copolymer, an ionic polymer, or an ethylene (meth) acrylate copolymer; the polyalkylene terephthalate resin polyethylene terephthalate, or polybutylene terephthalate Glycol ester; the thermoplastic resin is polyvinyl Isoprene, or polycarbonate; the adhesive layer includes a rubber-based adhesive, a silicone-based adhesive, an acrylic adhesive, a UV-curable urethane acrylate resin, and an isocyanate-based adhesive The intermediate layer comprises at least one selected from the group consisting of low-density polyethylene, polystyrene, and a mixture of polystyrene and rubber. For example, the dicing film for a semiconductor wafer according to item 4 of the patent application, wherein the thickness of the substrate is 50 μm or more and 300 μm or less. For example, the dicing film for a semiconductor wafer according to item 4 or 5 of the patent application scope, wherein the substrate contains an antistatic agent with a content of 3% by weight or more and 30% by weight or less based on the entire substrate. For example, the dicing film for a semiconductor wafer according to item 4 of the patent application, wherein the elongation at break of the intermediate layer at 80 ° C is 750% or less. For example, the dicing film for a semiconductor wafer according to item 4 of the patent application, wherein the intermediate layer is substantially free of an antistatic agent. For example, the dicing film for a semiconductor wafer according to item 4 of the patent application, wherein the thickness of the intermediate layer is 10 μm or more and 70 μm or less. A base film for cutting includes a base material layer and a surface layer disposed on one main surface of the base material layer; the base material includes a material selected from the group consisting of a polyolefin resin, an olefin copolymer, and polyterephthalene. At least one of the group consisting of an alkylene formate resin, a styrene thermoplastic elastomer, an olefin thermoplastic elastomer, a thermoplastic resin, and a mixture of these thermoplastic resins; the polyolefin resin polyvinyl chloride, poly Ethylene, polypropylene, polybutene, polybutadiene, or polymethylpentene; the olefin-based copolymer is an ethylene‧vinyl acetate copolymer, an ionic polymer, or an ethylene (meth) acrylate copolymer ; The polyalkylene terephthalate-based resin is polyethylene terephthalate, or polybutylene terephthalate; the thermoplastic resin is polyvinyl isoprene, or polycarbonate The surface layer contains a polystyrene resin and a vinyl aromatic hydrocarbon-conjugated diene copolymer or a hydrogenated product thereof, and the content of the polystyrene resin in the surface layer exceeds 50% by weight. For example, the substrate film for cutting of the scope of application for item 10, wherein the polystyrene resin is at least one selected from the group consisting of general-purpose polystyrene and impact-resistant polystyrene. For example, the substrate film for cutting according to claim 10 or 11, wherein the vinyl aromatic hydrocarbon-conjugated diene copolymer is a styrene-ethylene-butadiene-styrene copolymer. For example, the substrate film for cutting according to item 11 or 12 of the application scope, wherein the content of the vinyl aromatic hydrocarbon in the vinyl aromatic hydrocarbon-conjugated diene copolymer is 10% by weight or more and 50% by weight or less. For example, the base film for cutting of the scope of application for the patent No. 10 or 11, wherein the content of the polystyrene resin in the surface layer is more than 50% by weight and 85% by weight or less, and the vinyl fragrance in the surface layer is The content of the group hydrocarbon-conjugated diene copolymer or its hydride is 15% by weight or more and 50% by weight or less. For example, the base film for cutting of the scope of application for the patent No. 10 or 11, wherein the surface layer is a cut-in layer cut by a cutting blade. For example, the substrate film for cutting according to claim 10 or 11, wherein the substrate layer and the surface layer further include an intermediate layer. A cutting film having an adhesive layer on the main surface of the surface layer side of the cutting base film according to any one of claims 10 to 16; the adhesive layer comprises It is at least one selected from the group consisting of an adhesive, an ultraviolet curable urethane acrylate resin, and an isocyanate-based crosslinking agent. A method for manufacturing a semiconductor wafer includes the following steps: an attaching step, attaching a dicing film and a semiconductor component as described in item 17 of the scope of the patent application; a dicing step, dicing the semiconductor component to a single piece; an expanding step, dicing the dicing The diaphragm expands and expands between adjacent singulated semiconductor components; the picking step picks up the singulated semiconductor components.