JP2009152235A5 - - Google Patents

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Publication number
JP2009152235A5
JP2009152235A5 JP2007326184A JP2007326184A JP2009152235A5 JP 2009152235 A5 JP2009152235 A5 JP 2009152235A5 JP 2007326184 A JP2007326184 A JP 2007326184A JP 2007326184 A JP2007326184 A JP 2007326184A JP 2009152235 A5 JP2009152235 A5 JP 2009152235A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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JP2007326184A
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JP2009152235A (ja
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Priority to JP2007326184A priority Critical patent/JP2009152235A/ja
Priority claimed from JP2007326184A external-priority patent/JP2009152235A/ja
Priority to US12/328,275 priority patent/US20090152607A1/en
Publication of JP2009152235A publication Critical patent/JP2009152235A/ja
Publication of JP2009152235A5 publication Critical patent/JP2009152235A5/ja
Withdrawn legal-status Critical Current

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JP2007326184A 2007-12-18 2007-12-18 強誘電体積層構造及びその製造方法、電界効果トランジスタ及びその製造方法、並びに強誘電体キャパシタ及びその製造方法 Withdrawn JP2009152235A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007326184A JP2009152235A (ja) 2007-12-18 2007-12-18 強誘電体積層構造及びその製造方法、電界効果トランジスタ及びその製造方法、並びに強誘電体キャパシタ及びその製造方法
US12/328,275 US20090152607A1 (en) 2007-12-18 2008-12-04 Ferroelectric stacked-layer structure, field effect transistor, and ferroelectric capacitor and fabrication methods thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007326184A JP2009152235A (ja) 2007-12-18 2007-12-18 強誘電体積層構造及びその製造方法、電界効果トランジスタ及びその製造方法、並びに強誘電体キャパシタ及びその製造方法

Publications (2)

Publication Number Publication Date
JP2009152235A JP2009152235A (ja) 2009-07-09
JP2009152235A5 true JP2009152235A5 (ja) 2010-08-05

Family

ID=40752047

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007326184A Withdrawn JP2009152235A (ja) 2007-12-18 2007-12-18 強誘電体積層構造及びその製造方法、電界効果トランジスタ及びその製造方法、並びに強誘電体キャパシタ及びその製造方法

Country Status (2)

Country Link
US (1) US20090152607A1 (ja)
JP (1) JP2009152235A (ja)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101413273B1 (ko) * 2007-10-31 2014-06-27 삼성디스플레이 주식회사 광 검출 장치
US8164234B2 (en) * 2009-02-26 2012-04-24 Fujifilm Corporation Sputtered piezoelectric material
TWI425559B (zh) * 2009-09-17 2014-02-01 Univ Nat Chiao Tung 以單晶氧化物作為基板成長纖鋅礦結構半導體非極性ｍ面磊晶層之方法
JP4724258B2 (ja) 2009-10-29 2011-07-13 パナソニック株式会社 半導体記憶装置を駆動する方法
JP5899519B2 (ja) * 2009-11-05 2016-04-06 パナソニックＩｐマネジメント株式会社 固体撮像装置
WO2011062029A1 (en) * 2009-11-18 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Memory device
KR101894400B1 (ko) 2009-12-28 2018-09-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 장치와 반도체 장치
US8780629B2 (en) 2010-01-15 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
KR102542681B1 (ko) * 2010-01-20 2023-06-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전자 기기
TWI657565B (zh) 2011-01-14 2019-04-21 日商半導體能源研究所股份有限公司 半導體記憶裝置
US10079053B2 (en) 2011-04-22 2018-09-18 Semiconductor Energy Laboratory Co., Ltd. Memory element and memory device
US8916434B2 (en) 2012-05-11 2014-12-23 Cypress Semiconductor Corporation Enhanced hydrogen barrier encapsulation method for the control of hydrogen induced degradation of ferroelectric capacitors in an F-RAM process
DE102014109147A1 (de) * 2014-06-30 2015-12-31 Infineon Technologies Ag Feldeffekthalbleiter-Bauelement sowie Verfahren zu dessen Betrieb und Herstellung
KR101892632B1 (ko) * 2017-03-09 2018-10-04 한국과학기술연구원 백금족 산화물과 주석 산화물의 화합물을 갖는 반도체 메모리 소자 및 그 제조방법
US10962497B2 (en) * 2017-12-19 2021-03-30 International Business Machines Corporation Sensors based on negative capacitance field effect transistors

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5077270A (en) * 1987-03-26 1991-12-31 Matsushita Electric Industrial Co., Ltd. Elements comprising a film of a perovskite compound whose crystallographic axes are oriented and a method of making such elements
JP3033067B2 (ja) * 1992-10-05 2000-04-17 富士ゼロックス株式会社 多層強誘電体導膜の製造方法
US5453661A (en) * 1994-04-15 1995-09-26 Mcnc Thin film ferroelectric flat panel display devices, and methods for operating and fabricating same
JP3480624B2 (ja) * 1995-06-09 2003-12-22 シャープ株式会社 強誘電体薄膜被覆基板、その製造方法、及びキャパシタ構造素子
JP3103916B2 (ja) * 1997-07-09 2000-10-30 ソニー株式会社 強誘電体キャパシタおよびその製造方法並びにそれを用いたメモリセル
KR100420121B1 (ko) * 2001-06-21 2004-03-02 삼성전자주식회사 강유전막을 평탄화막으로 이용하는 강유전체 메모리 장치 및 그 제조방법
US6534326B1 (en) * 2002-03-13 2003-03-18 Sharp Laboratories Of America, Inc. Method of minimizing leakage current and improving breakdown voltage of polycrystalline memory thin films
US7153706B2 (en) * 2004-04-21 2006-12-26 Texas Instruments Incorporated Ferroelectric capacitor having a substantially planar dielectric layer and a method of manufacture therefor
KR100785458B1 (ko) * 2005-05-18 2007-12-13 삼성전자주식회사 강유전체 박막의 제조 방법 및 이를 이용한 반도체 장치의제조 방법

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