JP2009133658A - 全反射蛍光x線分析装置 - Google Patents
全反射蛍光x線分析装置 Download PDFInfo
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- 230000000007 visual effect Effects 0.000 claims abstract description 17
- 238000004364 calculation method Methods 0.000 claims abstract description 12
- 238000001514 detection method Methods 0.000 claims abstract description 7
- 238000005259 measurement Methods 0.000 claims description 89
- 238000004876 x-ray fluorescence Methods 0.000 claims description 16
- 230000002093 peripheral effect Effects 0.000 abstract description 14
- 235000012431 wafers Nutrition 0.000 description 19
- 238000004458 analytical method Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910002794 Si K Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000004445 quantitative analysis Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000000624 total reflection X-ray fluorescence spectroscopy Methods 0.000 description 1
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Abstract
【解決手段】全反射蛍光X線分析装置1は、円板状の試料の表面Saに微小な入射角度θで1次X線14を入射させ、発生する蛍光X線15の強度を検出器16で測定する。検出器16に対する試料Sの初期位置を検知する初期位置検知手段20と、試料の表面Saにおける測定部位52を検出器16の視野F内に移動させるステージ21と、初期位置検知手段20で検知した初期位置ならびにステージ21による移動の方向および量に基づいて、検出器16の視野F内における測定部位52の測定面積M1を算出し、算出した測定部位の測定面積M1および測定した測定強度I2に基づいて、単位面積M0あたりの測定強度I2×(M0/M1)を算出する算出手段31とを備えている。
【選択図】図1
Description
5 基準X線(Si−Kα線)
14 1次X線
15 蛍光X線
16 検出器(SSD)
20 初期位置検知手段
21 ステージ
23 入射角度調整手段(スイベルステージ)
24 ビームセンサ
30 制御手段
31 算出手段
50 基準部位
S 試料
Claims (2)
- 円板状の試料の表面に微小な入射角度で1次X線を入射させ、発生する蛍光X線の強度を検出器で測定する全反射蛍光X線分析装置であって、
前記検出器に対する試料の初期位置を検知する初期位置検知手段と、
前記初期位置から試料を移動させることにより、試料の表面における任意の測定部位を前記検出器の視野内に移動させるステージと、
前記初期位置検知手段で検知した初期位置ならびに前記ステージによる移動の方向および量に基づいて、前記検出器の視野内における前記測定部位の面積を算出し、その算出した測定部位の面積および前記検出器で測定した測定強度に基づいて、単位面積あたりの測定強度を算出する算出手段とを備えた全反射蛍光X線分析装置。 - 請求項1において、
前記ステージが、試料の傾きを変化させることにより前記入射角度を変化させる入射角度調整手段を有し、
試料表面から均一に発生する基準X線について、試料の表面における基準となる基準部位での測定強度に任意の測定部位での測定強度が合致するように、前記入射角度調整手段に前記任意の測定部位での入射角度を変化させる制御手段を備え、
その制御手段が、前記合致させる両測定強度として、前記算出手段が算出した単位面積あたりの測定強度を用いる全反射蛍光X線分析装置。
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JP2007308387A JP4514785B2 (ja) | 2007-11-29 | 2007-11-29 | 全反射蛍光x線分析装置 |
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JP2009133658A true JP2009133658A (ja) | 2009-06-18 |
JP4514785B2 JP4514785B2 (ja) | 2010-07-28 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2762862A1 (en) * | 2013-01-30 | 2014-08-06 | Bruker AXS GmbH | XRF measurement apparatus for detecting contaminations on the bevel of a wafer |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05218163A (ja) * | 1991-12-11 | 1993-08-27 | Hitachi Ltd | 異物検査方法及びその装置 |
JP2001133420A (ja) * | 1999-11-08 | 2001-05-18 | Rigaku Industrial Co | 全反射蛍光x線分析方法および装置 |
JP2002005858A (ja) * | 2000-06-20 | 2002-01-09 | Rigaku Industrial Co | 全反射蛍光x線分析装置 |
JP2004045064A (ja) * | 2002-07-09 | 2004-02-12 | Rigaku Industrial Co | 蛍光x線分析装置 |
JP2006214868A (ja) * | 2005-02-03 | 2006-08-17 | Siltronic Japan Corp | 全反射蛍光x線分析装置 |
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- 2007-11-29 JP JP2007308387A patent/JP4514785B2/ja active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05218163A (ja) * | 1991-12-11 | 1993-08-27 | Hitachi Ltd | 異物検査方法及びその装置 |
JP2001133420A (ja) * | 1999-11-08 | 2001-05-18 | Rigaku Industrial Co | 全反射蛍光x線分析方法および装置 |
JP2002005858A (ja) * | 2000-06-20 | 2002-01-09 | Rigaku Industrial Co | 全反射蛍光x線分析装置 |
JP2004045064A (ja) * | 2002-07-09 | 2004-02-12 | Rigaku Industrial Co | 蛍光x線分析装置 |
JP2006214868A (ja) * | 2005-02-03 | 2006-08-17 | Siltronic Japan Corp | 全反射蛍光x線分析装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2762862A1 (en) * | 2013-01-30 | 2014-08-06 | Bruker AXS GmbH | XRF measurement apparatus for detecting contaminations on the bevel of a wafer |
US9541511B2 (en) | 2013-01-30 | 2017-01-10 | Bruker Axs Gmbh | XRF measurement apparatus for detecting contaminations on the bevel of a wafer |
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