JP2009130157A - Method of manufacturing semiconductor device with die attach film - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device with a die attach film, in which the semiconductor device which is secured in cutting quality of the die attach film, can be manufactured easily and at a low cost. <P>SOLUTION: In a die attach layer transfer stage of transferring a die attach layer to each semiconductor element 1d as an individual piece, a resin film 4 serving as the die attach layer is formed on a transfer surface 21a of a transfer roller 21, the resin film 4 transferred by pressing the transfer roller 21 having the resin film 4 formed, against a die 26 is divided into individual piece films 4* corresponding to an array pattern of semiconductor elements 1d, and the individual films 4* are transferred to the respective semiconductor elements 1d by rolling the transfer roller 21 on the backside of the semiconductor wafer 1. Consequently, deficiencies in conventional methods are eliminated, and the semiconductor device which is secured in the cutting quality of the die attach film is manufactured in the easy and inexpensive method. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a method of manufacturing a semiconductor device with a die attach film for manufacturing a semiconductor device having a die attach layer formed on the back surface of a circuit forming surface of a semiconductor element.

  As a semiconductor device mounted on a substrate of an electronic device, a die attach film (hereinafter referred to as “DAF”) in which a die attach layer as an adhesive for fixing to a substrate is formed in advance on the back surface of a circuit formation surface of a semiconductor element. Semiconductor devices with abbreviations) are known. By previously forming the die attach layer in this way, there is an advantage that an adhesive application step can be omitted prior to mounting on a substrate or a lead frame. Such a semiconductor device with a die attach film is conventionally manufactured by various manufacturing methods (see, for example, Patent Documents 1 to 4).

In the examples shown in Patent Documents 1 and 2, a semiconductor device provided with a die attach layer is manufactured by cutting a semiconductor wafer with DAF attached together with DAF for each semiconductor element. In the example shown in Patent Document 3, a cutting groove for dividing a piece is formed on the semiconductor wafer from the circuit forming surface side, and then the back surface is divided into pieces of semiconductor elements by mechanical grinding. In this state, the die attach is performed. A chip fixing adhesive sheet provided with a layer is affixed, and then the chip fixing adhesive sheet is cut into individual pieces. And in the example shown in patent document 4, mechanical strength is weak inside a semiconductor wafer by irradiating a laser beam along a scribe line from the back surface side of a circuit formation surface first with respect to the semiconductor wafer to which the dicing tape was stuck. After forming the modified layer and then affixing the DAF to the back surface of the semiconductor wafer, the dicing tape is stretched to break the semiconductor wafer along the modified layer and divide it into pieces, and to tear off the DAF. I try to cut it.
JP-A-6-302629 JP-A-2005-333282 JP 2005-209940 A JP 2005-340423 A

  However, the prior art as shown in the above patent documents has the following problems. First, in the examples shown in Patent Literatures 1 and 2, since the semi-cured soft die attach layer is mechanically diced together with the hard semiconductor wafer, the degree of cutting is high, and there is a problem of poor cutting quality due to this cutting difficulty. It was inevitable. In the example shown in Patent Document 3, since only the DAF is cut after the cutting groove has already been formed in the semiconductor wafer, it is difficult to accurately match the shape of the cut DAF to the individual semiconductor wafer. There was a problem of protruding from the outer shape of the semiconductor element. In the example shown in Patent Document 4, it is difficult to ensure cutting accuracy and quality because the DAF is divided into pieces in a form that tears the DAF. Furthermore, when laser irradiation is used for cutting DAF, the cost of the apparatus increases and the process becomes complicated, and at the time of laser cutting, the DAF and dicing tape are fused by the heat of the laser beam, and the dicing tape is peeled off. There was a problem of inducing a bug. Thus, in the prior art including the above-described prior art examples, there is a problem that it is difficult to manufacture a DAF-attached semiconductor device in which DAF cutting quality is ensured by a simple and inexpensive method.

  Therefore, an object of the present invention is to provide a method for manufacturing a semiconductor device with a die attach film, which can manufacture a semiconductor device in which the cutting quality of the die attach film is ensured by a simple and inexpensive method.

  The method for manufacturing a semiconductor device with a die attach film according to claim 1 is a method for manufacturing a semiconductor device with a die attach film for manufacturing a semiconductor device in which a die attach layer is formed on the back surface of a circuit forming surface of a semiconductor element. A protective sheet attaching step of attaching a protective sheet to the circuit forming surface of the semiconductor wafer on which a plurality of the semiconductor elements are formed, and mechanically grinding the back surface of the semiconductor wafer on which the protective sheet is attached. A wafer thinning step for thinning the semiconductor wafer, a plasma dicing step for dividing the semiconductor wafer after the wafer thinning step into individual semiconductor elements by plasma processing, and a diamond on the back surface of the individual semiconductor elements. A die attach layer transfer step for transferring the touch layer for each piece, and the semiconductor wafer after the die attach layer transfer step A curing step of pre-curing the die attach layer by heating, and a step of removing the protective sheet from the circuit forming surface after pasting a die bonding sheet on the die attach layer forming side of the semiconductor wafer. In the die attach layer transfer step, a resin film serving as the die attach layer is formed on the transfer surface of the transfer roller provided with a transfer surface for transferring the die attach layer on the outer periphery, and the resin film is formed. The transfer roller is pressed against a mold and rolled to divide the resin film into individual films having a pattern corresponding to the arrangement pattern of semiconductor elements in the semiconductor wafer, and then the transfer roller is moved to the semiconductor wafer. By rolling on the back side, the piece film is transferred to each semiconductor element.

  The method for manufacturing a semiconductor device with a die attach film according to claim 2 is a method for manufacturing a semiconductor device with a die attach film for manufacturing a semiconductor device in which a die attach layer is formed on the back surface of a circuit forming surface of a semiconductor element. A half-cut step of forming a dividing groove by half-cutting a semiconductor wafer in which a plurality of the semiconductor elements are formed along a scribe line that divides each semiconductor element from the circuit forming surface side; A protective sheet attaching step of attaching a protective sheet to the circuit forming surface of the semiconductor wafer after half-cutting, and by mechanically grinding the back surface of the semiconductor wafer on which the protective sheet is attached until the dividing grooves are exposed. An individual dividing step for dividing the semiconductor wafer into individual semiconductor elements, and the back surface of the individual semiconductor elements A die attach layer transfer step for transferring the die attach layer for each piece; a curing step for pre-curing the die attach layer by heating the semiconductor wafer after the die attach layer transfer step; and Transferring the die attach layer to the outer periphery in the die attach layer transfer step, after attaching the die bonding sheet to the die attach layer forming side and then removing the protective sheet from the circuit forming surface. A resin film serving as the die attach layer is formed on the transfer surface of a transfer roller provided with a surface, and the transfer roller on which the resin film is formed is pressed against a mold to roll the resin film to the semiconductor The wafer is divided into individual films according to the arrangement pattern of the semiconductor elements on the wafer, and then the transfer roller is moved to the semiconductor wafer. Wherein by rolling the back side, to transfer the pieces film to the semiconductor element.

The method for manufacturing a semiconductor device with a die attach film according to claim 3 is a method for manufacturing a semiconductor device with a die attach film for manufacturing a semiconductor device in which a die attach layer is formed on the back surface of a circuit forming surface of a semiconductor element. A protective sheet attaching step of attaching a protective sheet to the circuit forming surface of the semiconductor wafer in which a plurality of the semiconductor elements are formed, and a back surface of the circuit forming surface with respect to the semiconductor wafer after the protective sheet attaching step A modified layer forming step of forming a modified layer having a mechanical strength weaker than that of the surroundings in a semiconductor wafer in the vicinity of the scribe line by irradiating a laser beam along a scribe line that separates the semiconductor elements from the side And a die attach film for transferring a die attach layer to each back surface of each semiconductor element of the semiconductor wafer after the modified layer forming step. A curing step of preliminarily curing the die attach layer by heating the semiconductor wafer after the die transfer step and the die attach layer transfer step; and after the curing step, the semiconductor sheet is extended by stretching the protective sheet. For dividing the die attach layer onto the outer periphery in the die attach layer transfer step, in which the die attach layer is transferred into the individual semiconductor elements along the scribe line. A resin film serving as the die attach layer is formed on the transfer surface of a transfer roller provided with a surface, and the transfer roller on which the resin film is formed is pressed against a mold to roll the resin film to the semiconductor The wafer is divided into individual films having a pattern corresponding to the arrangement pattern of the semiconductor elements on the wafer, and then the transfer roller is used as the semiconductor. By rolling at the back side of the E c, to transfer the pieces film to the semiconductor element.

  According to the present invention, in the die attach layer transfer process in which the die attach layer is transferred to the individual semiconductor elements for each individual piece, the resin film serving as the die attach layer is formed on the transfer surface of the transfer roller, and the resin film is formed. The transferred transfer roller is pressed against the mold and rolled to divide the resin film into individual films having a pattern according to the arrangement pattern of the semiconductor elements, and then the transfer roller is rolled on the back side of the semiconductor wafer. Is transferred to each semiconductor element, so that the problems in the conventional method can be solved, and a semiconductor device in which the cutting quality of the die attach film is ensured can be manufactured by a simple and inexpensive method.

(Embodiment 1)
Next, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a flowchart showing a method of manufacturing a semiconductor device with a die attach film according to the first embodiment of the present invention. FIGS. 2, 3, 4, and 5 are drawings with a die attach film according to the first embodiment of the present invention. It is process explanatory drawing of the manufacturing method of this semiconductor device.

  First, a method for manufacturing a semiconductor device with a die attach film will be described with reference to FIGS. This method of manufacturing a semiconductor device with a die attach film manufactures a semiconductor device in which a die attach layer is formed on the back surface of a circuit formation surface of a semiconductor element.

  In FIG. 1, first, a protective sheet attaching step for attaching a protective sheet to a semiconductor wafer is performed (ST1). That is, as shown to Fig.2 (a), the peelable protective sheet 2 is affixed on the circuit formation surface 1a of the semiconductor wafer 1 in which the several semiconductor element was built. Next, back grinding is performed (ST2). That is, the semiconductor wafer 1 is thinned by mechanically grinding the back surface 1b of the semiconductor wafer to which the protective sheet 2 is attached. As a result, the semiconductor wafer 1 initially having a thickness of about 750 μm is thinned to a thickness t of about 60 μm as shown in FIG. 2B (wafer thinning step).

  Next, a mask formation process is performed (ST3). That is, after the wafer thinning step, a resist film having a thickness of about 5 to 20 μm is formed on the mechanically ground surface by a method such as resin film pasting or resin coating by spin coating. Next, only a portion corresponding to the scribe line that partitions each semiconductor element in the resist film is removed by a method such as photolithography or laser processing. As a result, as shown in FIG. 2C, a mask for plasma dicing, that is, a mask 3 covering a region partitioned by the scribe line 3 a is formed on the back surface 1 b of the semiconductor wafer 1.

Next, a plasma dicing process is performed in which the semiconductor wafer 1 after the wafer thinning process is divided into individual semiconductor elements by plasma processing (ST4). FIG. 3 shows the configuration of the dry etching apparatus 10 used for this plasma dicing. In FIG. 3, the inside of the vacuum chamber 11 is a processing chamber 12 that performs plasma processing in a reduced-pressure atmosphere. By driving the vacuum exhaust device 15, the inside of the processing chamber 12 is reduced to a pressure for plasma processing. Is done. Inside the processing chamber 12, a high-frequency electrode 13 and a shower electrode 14 are disposed so as to face each other. On the upper surface of the high-frequency electrode 13, the semiconductor wafer 1 to be processed is placed in a posture with the protective sheet 2 facing the lower surface and the mask 3 facing the upper surface.

  A high frequency power supply device 16 is electrically connected to the high frequency electrode 13. The shower electrode 14 is grounded to the ground portion 18, and a high frequency voltage is applied between the high frequency electrode 13 and the shower electrode 14 by driving the high frequency power supply device 16. A plurality of gas ejection holes 14 a are opened on the lower surface of the shower electrode 14, and the gas ejection holes 14 a are connected to a gas supply unit 17 that supplies a fluorine-based plasma processing gas.

In the plasma processing, first, the semiconductor wafer 1 is placed on the high-frequency electrode 13, and a fluorine-based plasma generating gas is introduced into the processing chamber 12 by the gas supply unit 17 while the processing chamber 12 is evacuated by the vacuum exhaust device 15. (Here, a mixed gas of sulfur hexafluoride (SF ₆ ) and helium) is sprayed onto the semiconductor wafer 1, and in this state, a high frequency voltage is applied between the high frequency electrode 13 and the shower electrode 14. As a result, fluorine radicals and ions are generated by turning the fluorine-based gas into plasma, and plasma dicing is performed by the chemical action of the fluorine radicals and the physical action of the accelerated ions.

  That is, by irradiating the semiconductor wafer 1 with the plasma of the fluorine-based gas from the upper surface, as shown in FIG. 2D, the portion of the scribe line 3a that is not covered with the mask 3 in the semiconductor wafer 1 becomes the chemical action of fluorine radicals. And is removed by the physical action of accelerated ions. Then, by forming a dicing groove 1c that penetrates the entire thickness of the semiconductor wafer 1, the semiconductor wafer 1 is divided into a plurality of semiconductor elements 1d for each individual semiconductor device, as shown in FIG.

  Next, the DAF transfer process is executed (ST5). Here, the piece film 4 *, which is a die attach layer, is transferred to the back surface 1b of the piece of semiconductor element 1d for each piece by the method shown in FIG. First, as shown in FIG. 5A, a resin film 4 to be a die attach layer is formed on a transfer surface 21a of a cylindrical transfer roller 21 provided with a transfer surface 21a for transferring a die attach layer on the outer periphery. To do. As a method for forming the resin film 4, as shown in FIG. 5A, a method of forming the resin film 4 by extending the resin discharged from the nozzle 22 onto the transfer surface 21 a with a squeegee 23, or a film shape in advance. Various methods such as a method of sticking the resin molded into the transfer surface 21a can be used.

  Next, patterning for dividing the resin film 4 is performed. For this patterning, a mold 26 having a configuration in which lattice members 25 are provided on the plate member 24 in a pattern corresponding to the arrangement pattern of the semiconductor elements 1d is used. That is, as shown in FIG. 5B, the transfer roller 21 with the resin film 4 formed on the transfer surface 21a is pressed against the mold 26 and rolled, so that a cut 4a is made in the resin film 4 by the lattice teeth 25. Then, as shown in FIG. 5C, the resin film 4 is divided into individual films 4 * having a pattern corresponding to the arrangement pattern of the semiconductor elements 1d in the semiconductor wafer 1.

  Next, the transfer roller 21 having the individual film 4 * formed on the transfer surface 21a is rolled on the back surface 1b side of the semiconductor wafer 1 as shown in FIG. Transferred to the semiconductor element 1d. As a result, as shown in FIG. 4A, the individual film 4 * of the die attach layer is adhered to the back surface 1b side of the semiconductor element 1d of each individual piece held by the protective sheet 2 by transfer. (Die attach layer transfer process).

  The semiconductor wafer 1 in a state where the individual semiconductor element 1d is held on the protective sheet 2 is sent to the curing process (ST6). Here, as shown in FIG. 4B, the semiconductor wafer 1 after the die attach layer transfer process is placed on the work placement unit 20 of the curing device 19, and the semiconductor wafer 1 is heated to form individual die attach layers. The single film 4 * is temporarily cured (curing process).

  Thereafter, the semiconductor wafer 1 after the curing process is sent to the die bonding sheet attaching process (ST7). Here, the die bonding sheet 6 is attached to the die attach layer forming side of the semiconductor wafer 1. That is, as shown in FIG. 4 (c), each semiconductor element 1d is attached to the protective sheet 2 with the individual film 4 * temporarily cured on the die bonding sheet 6 stretched on the wafer ring 5. Is transcribed.

  Thereafter, the protective sheet 2 is sent to a protective sheet removing step for removing the protective sheet 2 from the circuit forming surface 1a (ST8). That is, as shown in FIG. 4D, the protective sheet 2 is peeled from the plurality of divided semiconductor elements 1d in a state where the plurality of semiconductor elements 1d are attached to the die bonding sheet 6. As a result, the semiconductor element 1d is held on the die bonding sheet 6 via the individual film 4 * that is the detachment layer with the circuit forming surface 1a facing upward.

  In the die bonding step of mounting the semiconductor element 1d on the substrate, the semiconductor element 1d is sucked and held from the circuit forming surface 1a side by the mounting nozzle, and the piece film 4 * is peeled from the die bonding sheet 6. Then, the mounting nozzle holding the semiconductor element 1d is moved onto the substrate to perform a component mounting operation, whereby the semiconductor element 1d is mounted on the substrate via the individual film 4 * which is a tentatively cured detachment layer. .

(Embodiment 2)
FIG. 6 is a process explanatory view showing the method of manufacturing the semiconductor device with the die attach film according to the second embodiment of the present invention. In the second embodiment, as in the first embodiment, a semiconductor device in which a die attach layer is formed on the back surface of a circuit formation surface of a semiconductor element is manufactured. (ST2) to (ST3 in Embodiment 1) are executed by the following steps.

  First, as shown in FIG. 6A, a semiconductor wafer 31 in which a plurality of semiconductor elements are formed as in the semiconductor wafer 1 shown in the first embodiment is separated from the circuit forming surface 31a side by a dicing saw 32. The dividing groove 31c is formed by half-cutting along a scribe line that divides (half-cut process). Next, as shown in FIG. 6B, the same protective sheet 2 as in the first embodiment is attached to the circuit forming surface 31a of the semiconductor wafer 31 after the half cut (protective sheet attaching step).

  Thereafter, the semiconductor wafer 31 held on the protective sheet 2 is sent to the piece dividing step. That is, as shown in FIG. 6 (c), by mechanically grinding the back surface 31 b of the semiconductor wafer 31 to which the protective sheet 2 is attached until the dividing grooves 31 c are exposed by the grinding tool 33. The semiconductor wafer 31 is divided into individual semiconductor elements 31d. As a result, as shown in FIG. 6D, the semiconductor wafer 31 is in a state where the plurality of semiconductor elements 31 d divided by the dividing grooves 31 c are held by the protective sheet 2.

  The subsequent steps are the same as (ST5) to (ST8) shown in FIG. That is, the die attach layer is temporarily transferred by heating the die attach layer transfer step for transferring the die attach layer to each back surface 31b of the individual semiconductor element 31 and the semiconductor wafer 31 after the die attach layer transfer step. A curing process for curing and a process for removing the protective sheet 2 from the circuit forming surface 31a are performed after the die bonding sheet 6 is attached to the die attach layer forming side of the semiconductor wafer 31. Then, in the die attach layer transfer process, as in the first embodiment, the piece film 4 * is transferred to each semiconductor element 31d by the method shown in FIG.

(Embodiment 3)
7 and 8 are process explanatory views showing a method of manufacturing a semiconductor device with a die attach film according to the third embodiment of the present invention. In the third embodiment, a semiconductor device in which a die attach layer is formed on the back surface of a circuit formation surface of a semiconductor element as in the first embodiment is manufactured. The division of a semiconductor wafer and DAF transfer are shown below. Each step is executed.

  First, as shown in FIG. 7A, a semiconductor wafer 41 in which a plurality of semiconductor elements are formed as in the semiconductor wafer 1 shown in the first embodiment is placed on a wafer ring 45 with a circuit formation surface 41a facing downward. Affixing to the spread protective sheet 46 (protective sheet affixing step). Next, the semiconductor wafer 41 is sent to the modified layer forming step together with the wafer ring 45. That is, as shown in FIG. 7B, the scribe line 41c that separates each semiconductor element 41d from the back surface 41b side of the circuit forming surface with respect to the semiconductor wafer 41 after the protective sheet attaching step (see FIG. 7C). A laser beam is irradiated by the laser irradiation device 47 along the line. In this laser beam irradiation, the laser beam is irradiated with a condensing point aligned inside the thickness direction of the semiconductor wafer 41. As a result, as shown in FIG. 7B, a modified layer 41e is formed in the semiconductor wafer 41 in the vicinity of the scribe line 41c and includes a minute crack and has a mechanical strength lower than that of the surrounding area.

  Thereafter, as shown in FIG. 8A, the die attach layer is transferred to the back surface 41b of each semiconductor element 41d of the semiconductor wafer 41 after the modified layer forming step (die attach layer transfer step). . In this die attach layer transfer step, as in the first embodiment, the piece film 4 * is transferred for each position of each semiconductor element 41d by the method shown in FIG. Thereafter, the same curing process as in the first embodiment is performed to temporarily cure the individual film 4 *, and then the wafer dividing process is performed.

  That is, the semiconductor wafer 41 is sent to the dividing device while being held by the wafer ring 45. At the time of division, as shown in FIG. 8B, the ring member 48 is brought into contact with the lower surface side of the protective sheet 46 and pushed upward. As a result, the protective sheet 46 is stretched in the film direction, and a tensile force acts on the semiconductor wafer 41 attached to the protective sheet 46. As shown in FIG. Divided into individual semiconductor elements 41d along the modified layer 41e formed along the scribe line 41c. That is, in the wafer dividing step, the protective sheet 46 is stretched after the curing step to divide the semiconductor wafer 41 into individual semiconductor elements 41d along the scribe line 41c starting from the modified layer 41e.

  Thereafter, the semiconductor wafer 41 after the curing step is sequentially sent to the die bonding sheet attaching step and the protective sheet removing step, similarly to (ST7) and (ST8) in the first embodiment. That is, each semiconductor element 41d is transferred to the die bonding sheet through the temporarily cured individual piece film 4 * while being attached to the protective sheet 46. Thereafter, the protective sheet 46 is peeled from the plurality of divided semiconductor elements 41d. As a result, as in the first embodiment, the semiconductor element 41d is held on the die bonding sheet with the circuit forming surface 41a facing upward and the back surface side through the individual film 4 *, which is a detachment layer.

  As described above, in the method of manufacturing a semiconductor device with a die attach film described in each of the first, second, and third embodiments, die attach layer transfer is performed by transferring a die attach layer to each individual semiconductor element. In the process, a resin film serving as a die attach layer is formed on the transfer surface of the transfer roller, and the transfer roller on which the resin film is formed is pressed against a mold and rolled, so that the resin film has a pattern corresponding to the arrangement pattern of the semiconductor elements. The film is divided into individual films, and then the transfer roller is rolled on the back side of the semiconductor wafer to transfer the individual films to each semiconductor element.

As a result, conventional methods such as poor cutting quality due to cutting difficulty when mechanically dicing a soft die attach layer together with a hard semiconductor wafer, and the die attach layer protruding when only the die attach film is cut after dicing, etc. The semiconductor device in which the cutting quality of the die attach film is secured can be manufactured by a simple and inexpensive method by eliminating the problems in the method.

The method for manufacturing a semiconductor device with a die attach film of the present invention has an effect that a semiconductor device in which the cutting quality of the die attach film is ensured can be manufactured by a simple and inexpensive method, and is cut out from a semiconductor wafer. This is useful in the field of die bonding for mounting a semiconductor element on a substrate.
Useful for.

The flowchart which shows the manufacturing method of the semiconductor device with the die attach film of Embodiment 1 of this invention. Process explanatory drawing of the manufacturing method of the semiconductor device with the die attach film of Embodiment 1 of this invention Process explanatory drawing of the manufacturing method of the semiconductor device with the die attach film of Embodiment 1 of this invention Process explanatory drawing of the manufacturing method of the semiconductor device with the die attach film of Embodiment 1 of this invention Process explanatory drawing of the manufacturing method of the semiconductor device with the die attach film of Embodiment 1 of this invention Process explanatory drawing which shows the manufacturing method of the semiconductor device with the die attach film of Embodiment 2 of this invention Process explanatory drawing which shows the manufacturing method of the semiconductor device with the die attach film of Embodiment 3 of this invention Process explanatory drawing which shows the manufacturing method of the semiconductor device with the die attach film of Embodiment 3 of this invention

Explanation of symbols

1, 31, 41 Semiconductor wafer 1a, 31a, 41a Circuit forming surface 1d, 31d, 41d Semiconductor element 2, 46 Protective sheet 4 Resin film 4 * Single film (die attach layer)
6 Die Bonding Sheet 21 Transfer Roller 21a Transfer Surface 26 Mold 41c Scribe Line 41e Modified Layer

Claims (3)

A method of manufacturing a semiconductor device with a die attach film for manufacturing a semiconductor device in which a die attach layer is formed on the back surface of a circuit forming surface of a semiconductor element,
A protective sheet attaching step of attaching a protective sheet to the circuit forming surface of a semiconductor wafer in which a plurality of the semiconductor elements are built;
A wafer thinning step of thinning the semiconductor wafer by mechanically grinding the back surface of the semiconductor wafer to which the protective sheet is attached;
A plasma dicing step of dividing the semiconductor wafer after the wafer thinning step into individual semiconductor elements by plasma processing;
A die attach layer transfer step for transferring a die attach layer to each back surface of the individual semiconductor element;
A curing step of pre-curing the die attach layer by heating the semiconductor wafer after the die attach layer transfer step;
After pasting a die bonding sheet on the die attach layer forming side of the semiconductor wafer, and removing the protective sheet from the circuit forming surface,
In the die attach layer transfer step, a resin film serving as the die attach layer is formed on the transfer surface of a transfer roller provided with a transfer surface for transferring the die attach layer on the outer periphery, and the resin film is formed. The transfer roller is pressed against a mold and rolled to divide the resin film into individual films having a pattern corresponding to the arrangement pattern of the semiconductor elements on the semiconductor wafer, and then the transfer roller is moved to the back surface of the semiconductor wafer. A method of manufacturing a semiconductor device with a die attach film, wherein the piece film is transferred to each semiconductor element by rolling on the side. A method of manufacturing a semiconductor device with a die attach film for manufacturing a semiconductor device in which a die attach layer is formed on the back surface of a circuit forming surface of a semiconductor element,
A half-cut step of forming a dividing groove by half-cutting a semiconductor wafer in which a plurality of the semiconductor elements are built along a scribe line that divides each semiconductor element from the circuit forming surface side;
A protective sheet attaching step of attaching a protective sheet to the circuit forming surface of the semiconductor wafer after the half cut;
A piece dividing step of dividing the semiconductor wafer into pieces of semiconductor elements by mechanical grinding the back surface of the semiconductor wafer to which the protective sheet is attached until the divided grooves are exposed,
A die attach layer transfer step for transferring a die attach layer to each back surface of the individual semiconductor element;
A curing step of pre-curing the die attach layer by heating the semiconductor wafer after the die attach layer transfer step;
After pasting a die bonding sheet on the die attach layer forming side of the semiconductor wafer, and removing the protective sheet from the circuit forming surface,
In the die attach layer transfer step, a resin film serving as the die attach layer is formed on the transfer surface of a transfer roller provided with a transfer surface for transferring the die attach layer on the outer periphery, and the resin film is formed. The transfer roller is pressed against a mold and rolled to divide the resin film into individual films having a pattern corresponding to the arrangement pattern of the semiconductor elements on the semiconductor wafer, and then the transfer roller is moved to the back surface of the semiconductor wafer. A method of manufacturing a semiconductor device with a die attach film, wherein the piece film is transferred to each semiconductor element by rolling on the side. A method of manufacturing a semiconductor device with a die attach film for manufacturing a semiconductor device in which a die attach layer is formed on the back surface of a circuit forming surface of a semiconductor element,
A protective sheet attaching step of attaching a protective sheet to the circuit forming surface of a semiconductor wafer in which a plurality of the semiconductor elements are built;
By irradiating a laser beam along a scribe line that divides each semiconductor element from the back side of the circuit forming surface to the semiconductor wafer after the protective sheet attaching step, the inside of the semiconductor wafer in the vicinity of the scribe line is surrounded. A modified layer forming step of forming a modified layer having a lower mechanical strength than
A die attach film transfer step of transferring a die attach layer to each back surface of each semiconductor element of the semiconductor wafer after the modified layer forming step;
A curing step of pre-curing the die attach layer by heating the semiconductor wafer after the die attach layer transfer step;
After the curing step, including the individual piece dividing step of dividing the semiconductor wafer into individual semiconductor elements along the scribe line starting from the modified layer by extending the protective sheet,
In the die attach layer transfer step, a resin film serving as the die attach layer is formed on the transfer surface of a transfer roller provided with a transfer surface for transferring the die attach layer on the outer periphery, and the resin film is formed. The transfer roller is pressed against a mold and rolled to divide the resin film into individual films having a pattern corresponding to the arrangement pattern of the semiconductor elements on the semiconductor wafer, and then the transfer roller is moved to the back surface of the semiconductor wafer. A method of manufacturing a semiconductor device with a die attach film, wherein the piece film is transferred to each semiconductor element by rolling on the side.

Images