JP2009117405A - Semiconductor layer and method of manufacturing semiconductor apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To manufacture a microcrystal semiconductor layer having excellent crystallinity and a semiconductor apparatus. <P>SOLUTION: A microcrystal semiconductor film is formed by laser treatment by growing a crystal using a crystal nucleus as a seed after forming the crystal nucleus using fluorine-based gas (SiF4) and silane in order to remove an amorphous layer formed on an interface between a microcrystal semiconductor film and an insulating film under the microcrystal semiconductor film. Crystallinity is improved by allowing the front surface of the microcrystal semiconductor film to be subjected to fluorine-based gas (SiF4) treatment. A bottom gate thin film transistor is formed using the microcrystal semiconductor film. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

The present invention relates to a semiconductor layer and a method for manufacturing a semiconductor device.

In recent years, a technique for forming a thin film transistor using a semiconductor thin film (having a thickness of about several to several hundred nm) formed on a substrate having an insulating surface has attracted attention. Thin film transistors are widely applied to electronic devices such as ICs and electro-optical devices, and development of switching devices for image display devices is urgently required.

As a switching element of an image display device, a thin film transistor using an amorphous semiconductor film, a thin film transistor using a polycrystalline semiconductor film, or the like is used. As a method for forming a polycrystalline semiconductor film, a technique is known in which a pulsed excimer laser beam is processed into a linear shape by an optical system, and is crystallized by irradiating the amorphous silicon film while scanning the linear beam. It has been.

As a switching element of an image display device, a thin film transistor using a microcrystalline semiconductor film is used (Patent Documents 1 and 2).

As a conventional method for manufacturing a thin film transistor, after forming an amorphous silicon film on a gate insulating film, a metal film is formed on the upper surface, and the metal film is irradiated with a diode laser to convert the amorphous silicon film into a microcrystal. Those which are modified into a silicon film are known. According to this method, the metal film formed on the amorphous silicon film is for converting the light energy of the diode laser into thermal energy, and should be removed thereafter for the completion of the thin film transistor. . In other words, the amorphous silicon film is heated only by conductive heating from the metal film to form a microcrystal silicon film.
JP-A-4-242724 JP 2005-49832 A Toshiaki Arai et al., SID 07 DIGEST, 2007, p. 1370-1373

A thin film transistor using a polycrystalline semiconductor film has a mobility that is two orders of magnitude higher than a thin film transistor using an amorphous semiconductor film, and a pixel portion of a semiconductor display device and its peripheral driver circuit can be formed over the same substrate. Has the advantage. However, compared to the case where an amorphous semiconductor film is used, the process is complicated for crystallization of the semiconductor film, so that there is a problem that the yield is reduced and the cost is increased accordingly.

In addition, in an inverted staggered thin film transistor using a microcrystalline semiconductor film, electrical characteristics of the thin film transistor such as low crystallinity in the interface region between the gate insulating film and the microcrystalline semiconductor film, low mobility, and low on-state current can be obtained. There is a problem that the characteristics are bad.

In view of the above problems, an object of the present invention is to create a semiconductor layer with improved crystallinity in an interface region between a gate insulating film and a microcrystalline semiconductor film. Another object is to manufacture a thin film transistor with excellent electrical characteristics and high reliability, and a display device including the thin film transistor.

One of the preparation methods of the present invention is to form a gate insulating film on a gate electrode on an insulating surface, and on the gate insulating film, fluoride such as fluorine, hydrogen, silicon, germanium, and silicon Alternatively, a crystal nucleus is formed using a deposition gas containing germanium, and a microcrystalline semiconductor film is formed by crystal growth using a deposition gas containing silicon or germanium using the crystal nucleus as a seed, and a gate insulating film and The crystallinity at the interface of the microcrystalline semiconductor film is increased. Next, the crystallinity of the microcrystalline semiconductor film is improved by irradiating the microcrystalline semiconductor film with a laser beam. Next, a thin film transistor is formed using a microcrystalline semiconductor film with improved crystallinity at the interface with the gate insulating film as a channel formation region.

One of the preparation methods of the present invention is to form a gate insulating film on a gate electrode on an insulating surface, and form a crystal nucleus on the gate insulating film using a deposition gas containing silicon or germanium. Crystal growth is performed using a deposition gas containing silicon or germanium with the crystal nucleus as a seed to form a microcrystalline semiconductor film, and crystallinity at the interface between the gate insulating film and the microcrystalline semiconductor film is increased. Next, the crystallinity of the microcrystalline semiconductor film is improved by irradiating the microcrystalline semiconductor film with a laser beam. Next, the amorphous semiconductor portion of the surface of the microcrystalline semiconductor film is selectively etched with a gas containing fluorine or a fluoride such as hydrogen, silicon, or germanium, so that the crystallinity of the surface of the microcrystalline semiconductor film is improved. Next, a thin film transistor is formed using a microcrystalline semiconductor film with improved crystallinity at the interface with the gate insulating film and on the surface as a channel formation region.

One embodiment of the present invention is a method for manufacturing these microcrystalline semiconductor films or microcrystalline semiconductor films.

Examples of fluorides such as hydrogen, silicon, and germanium include HF, SiF ₄ , SiHF ₃ , SiH ₂ F ₂ , SiH ₃ F, Si ₂ F ₆ , GeF ₄ , GeHF ₃ , GeH ₂ F ₂ , GeH ₃ F, Ge ₂ F ₆ etc. Examples of the deposition gas containing silicon or germanium include SiH ₄ , Si ₂ H ₂ , GeH ₄ , and Ge ₂ H ₆ .

In addition, a thin film transistor is formed by forming a buffer layer over the microcrystalline semiconductor film and forming a source region and a drain region, and a source wiring and a drain wiring over the buffer layer.

By irradiating the microcrystalline semiconductor film with a laser beam, crystallinity at the interface between the gate insulating film and the microcrystalline semiconductor film is improved, and a bottom-gate transistor in which a channel formation region is formed using the microcrystalline semiconductor film is formed. It is possible to improve the electrical characteristics of the thin film transistor.

A buffer layer is formed between the microcrystalline semiconductor film with improved crystallinity and the source and drain regions. The microcrystalline semiconductor film functions as a channel formation region. Further, the buffer layer functions as a high resistance region while preventing oxidation of the microcrystalline semiconductor film. Since the buffer layer is formed between the microcrystalline semiconductor film and the source and drain regions, mobility is high, leakage current is small, and breakdown voltage is high.

As the buffer layer, there is an amorphous semiconductor film, and an amorphous semiconductor film containing any one or more of nitrogen, hydrogen, and halogen is preferable. By including any one of nitrogen, hydrogen, and halogen in the amorphous semiconductor film, oxidation of crystal grains included in the microcrystalline semiconductor film can be reduced.

The buffer layer can be formed by a plasma CVD method, a sputtering method, or the like. In addition, after the amorphous semiconductor film is formed, the surface of the amorphous semiconductor film is treated with nitrogen plasma, hydrogen plasma, or halogen plasma to be nitrided, hydrogenated, or halogenated. be able to.

By providing the buffer layer over the surface of the microcrystalline semiconductor film, oxidation of crystal grains included in the microcrystalline semiconductor film can be reduced; thus, deterioration in electrical characteristics of the thin film transistor can be reduced.

One feature of the present invention is that a display device is manufactured by forming a pixel electrode connected to the thin film transistor.

In addition, a thin film transistor (TFT) is manufactured using a microcrystalline semiconductor film, and a display device is manufactured using the thin film transistor in a pixel portion and further in a driver circuit. A thin film transistor using a microcrystalline semiconductor film has a mobility of 1 to ²⁰ cm ² / V · sec, which is 2 to 20 times that of a thin film transistor using an amorphous semiconductor film. A part or all of the above can be integrally formed on the same substrate as the pixel portion to form a system-on-panel.

The display device includes a light emitting device and a liquid crystal display device. The light emitting device includes a light emitting element, and the liquid crystal display device includes a liquid crystal element. The light-emitting element includes, in its category, an element whose luminance is controlled by current or voltage, and specifically includes organic EL (electroluminescence) and inorganic EL.

The display device includes a panel in which the display element is sealed, and a module in which an IC including a controller is mounted on the panel. Furthermore, the present invention relates to an element substrate corresponding to one mode before the display element is completed in the process of manufacturing the display device, and the element substrate includes a unit for supplying current to the display element. Prepare for. Specifically, the element substrate may be in a state where only the pixel electrode of the display element is formed, or after the conductive film to be the pixel electrode is formed, the pixel electrode is formed by etching. The previous state may be used, and all forms are applicable.

Note that a display device in this specification means an image display device, a light-emitting device, or a light source (including a lighting device). Also, a connector, for example, a module with a FPC (Flexible printed circuit) or TAB (Tape Automated Bonding) tape or TCP (Tape Carrier Package), a module with a printed wiring board at the end of a TAB tape or TCP, or a display It is assumed that the display device includes all modules in which an IC (integrated circuit) is directly mounted on the element by a COG (Chip On Glass) method.

According to the present invention, a highly reliable thin film transistor with excellent electrical characteristics and a display device including the thin film transistor can be manufactured.

When the channel formation region is formed using a microcrystalline semiconductor film, variation in threshold voltage is suppressed, field-effect mobility is improved, and a subthreshold coefficient (S value) is reduced. Performance can be improved. As a result, the drive frequency of the display device can be increased, and it is possible to sufficiently cope with an increase in panel size and an increase in pixel density.

Embodiments of the present invention will be described below with reference to the drawings. However, the present invention is not limited to the following description, and it will be easily understood by those skilled in the art that modes and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments below. In the structure of the present invention described below, the same reference numerals are used in common in different drawings. In addition, arrangement | positioning of each apparatus in the production system shown by the following embodiment shows an example, and if it is arrangement | positioning which has the same effect, it should not be limitedly interpreted to what is illustrated.

(Embodiment 1)
In this embodiment, a manufacturing process of a thin film transistor will be described with reference to FIGS. 1 to 3, 5, 9, 12, 14, 15, and 17 are cross-sectional views illustrating a manufacturing process of a thin film transistor, and FIGS. 7 and 16 are top views of a connection region of a thin film transistor and a pixel electrode in one pixel. is there.

Here, description is made using an n-channel thin film transistor.

As shown in FIG. 1A, a gate electrode 51 is formed over a substrate 50, and gate insulating films 52 a and 52 b are formed over the gate electrode 51.

The substrate 50 is a heat-resistant material that can withstand the processing temperature in this manufacturing process, in addition to a non-alkali glass substrate manufactured by a fusion method or a float method, such as barium borosilicate glass, aluminoborosilicate glass, or aluminosilicate glass, or a ceramic substrate. A plastic substrate or the like having the above can be used. Alternatively, a substrate in which an insulating film is provided on the surface of a metal substrate such as a stainless alloy may be used. That is, an insulating surface is formed.

The gate electrode 51 is formed of a metal material. As the metal material, aluminum, chromium, titanium, tantalum, molybdenum, copper, or the like is applied. A preferred example of the gate electrode 51 is formed of aluminum or a laminated structure of aluminum and a barrier metal. As the barrier metal, a refractory metal such as titanium, molybdenum, or chromium is used. The barrier metal is preferably provided to prevent hillocks and oxidation of aluminum. Here, a molybdenum film is formed as a conductive film over the substrate 50 by a sputtering method, and the conductive film formed over the substrate 50 is etched using a mask pattern formed using a first photomask to form a gate electrode. Form.

The gate electrode 51 is formed with a thickness of 50 nm to 300 nm. By setting the thickness of the gate electrode 51 to 50 nm or more and 100 nm or less, it is possible to prevent disconnection of a semiconductor film or a wiring to be formed later. In addition, by setting the thickness of the gate electrode 51 to 150 nm or more and 300 nm or less, the resistance of the gate electrode 51 can be reduced, and the area can be increased.

Note that since a semiconductor film or a wiring is formed over the gate electrode 51, it is desirable that the end portion be tapered so as to prevent disconnection. Although not shown, a wiring connected to the gate electrode and a capacitor wiring can be formed at the same time in this step.

Each of the gate insulating films 52a and 52b can be formed using a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or a silicon nitride oxide film by a CVD method, a sputtering method, or the like. Here, a mode in which a silicon nitride film or a silicon nitride oxide film is formed as the gate insulating film 52a and a silicon oxide film or a silicon oxynitride film is formed and stacked as the gate insulating film 52b is shown. Note that the gate insulating film is not formed in two layers, and the gate insulating film can be formed using a single layer of a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or a silicon nitride oxide film.

Further, the gate insulating film is formed of three layers, a silicon nitride film or a silicon nitride oxide film is formed over the gate electrode, a silicon oxide film or a silicon oxynitride film is formed thereon, and a thickness of 1 nm is formed thereon. A silicon nitride film or a silicon nitride oxide film having a thickness of about 5 nm can be formed.

As a method for forming a silicon nitride film having a thickness of about 1 nm to 5 nm, the gate insulating film 52b is nitrided using high-density plasma to form a silicon nitride layer on the surface of the gate insulating film 52b. Can do. It is also possible to obtain a silicon nitride layer containing a higher concentration of nitrogen by performing high density plasma nitridation. The high density plasma is generated by using a high frequency microwave, for example 2.45 GHz. Since high-density plasma characterized by low electron temperature has low kinetic energy of active species, it is possible to form a layer with less plasma damage and fewer defects than conventional plasma treatment. Further, since the surface roughness of the gate insulating film 52b can be reduced, carrier mobility can be increased.

By forming the gate insulating film 52a using a silicon nitride film or a silicon nitride oxide film, the adhesion between the substrate 50 and the gate insulating film 52a is increased. When a glass substrate is used as the substrate 50, impurities from the substrate 50 Can be prevented from diffusing into the microcrystalline semiconductor film, and the gate electrode 51 can be prevented from being oxidized. That is, film peeling can be prevented and electrical characteristics of a thin film transistor to be formed later can be improved. Further, it is preferable that each of the gate insulating films 52a and 52b has a thickness of 50 nm or more because reduction in coverage due to the unevenness of the gate electrode 51 can be reduced.

Here, the silicon oxynitride film has a composition that contains more oxygen than nitrogen and has a concentration range of 55 to 65 atomic%, 1 to 20 atomic%, and 25 Si. -35 atomic%, and hydrogen is contained in the range of 0.1-10 atomic%. The silicon nitride oxide film has a composition containing more nitrogen than oxygen, and the concentration ranges of oxygen are 15 to 30 atomic%, nitrogen is 20 to 35 atomic%, and Si is 25 to 25%. 35 atomic% and hydrogen are included in the range of 15 to 25 atomic%.

Next, a microcrystalline semiconductor film is formed over the gate insulating film 52b so that an amorphous layer is not formed at the interface with the surface of the gate insulating film 52b. Specifically, the crystal nucleus 57a is formed on the gate insulating film 52b. Next, the crystal nucleus 57a is used as a seed for crystal growth to form the microcrystalline semiconductor film 53a. Further, by laser treatment, crystals are grown using the crystal nuclei 57b in the microcrystalline semiconductor film 53a as seeds so that there are more microcrystals at the interface with the surface of the gate insulating film 52b. A method for forming a series of these microcrystalline semiconductor films is referred to as a first microcrystalline semiconductor film forming method.

Hereinafter, the first microcrystalline semiconductor film forming method will be described in time series with reference to FIG. Further, crystal nucleus formation processing, film formation processing, and laser processing will be described with reference to FIGS. 2 and 3 which are enlarged cross-sectional views of an interface between the gate insulating film and the microcrystalline semiconductor film.

FIG. 4 is a time chart illustrating a process for forming a microcrystalline semiconductor film, and shows a typical example. The description of FIG. 4 is shown from the stage of evacuating the reaction chamber from atmospheric pressure 440. Subsequent substrate loading 441, base pretreatment 442, crystal nucleus formation processing 443, film formation processing 444, substrate unloading 445, Each process of the cleaning 446 is shown in time series.

First, the reaction chamber is evacuated to a predetermined degree of vacuum. In the case of high vacuum evacuation, evacuation by a turbo molecular pump or the like is performed, and the vacuum is evacuated to a pressure lower than 10 ⁻¹ Pa as a degree of vacuum. Further, it is preferable to perform a degassing treatment from the inner wall by heat-treating the reaction chamber. In addition, the heater for heating the substrate is also operated to stabilize the temperature. The heating temperature of the substrate is 100 ° C to 300 ° C, preferably 120 ° C to 220 ° C.

In substrate loading 441, a substrate is loaded into the reaction chamber from a load lock chamber connected to the reaction chamber. At this time, the pressure in the reaction chamber is the same as that in the load lock chamber.

The base pretreatment 442 introduces hydrogen and further a rare gas such as argon to remove gas adsorbed on the inner wall of the reaction chamber (atmospheric components such as oxygen and nitrogen, or etching gas used for cleaning the reaction chamber). It is preferable to perform plasma treatment. Use of a rare gas element plasma such as argon, krypton, or xenon having a large mass number is preferable because oxygen, moisture, organic matter, metal elements, and the like attached to the surface are removed by sputtering. The plasma treatment using hydrogen is effective for removing the impurities adsorbed on the surface by hydrogen radicals and forming a clean surface by an etching action on the insulating film or the amorphous silicon film. Note that the pressure in the reaction chamber at this time is a set pressure because gas is introduced into the reaction chamber.

Note that in the base pretreatment 442, as shown by a broken line 447, a fluorinated silane gas is introduced into the reaction chamber to remove impurities and clean the surface as in the plasma treatment using hydrogen or the plasma treatment using a rare gas. May be formed.

The crystal nucleation treatment 443 is performed by mixing fluorine or a fluoride such as hydrogen, silicon, germanium, or the like here, fluorinated silane, hydrogen, and a deposition gas containing silicon or germanium, here silane, in the reaction chamber. Crystal nuclei are formed by glow discharge plasma. The glow discharge plasma generates fluorine radicals from the fluorinated silane. Fluorine radicals are highly reactive and selectively etch amorphous semiconductors that are more easily etched than microcrystalline semiconductors. Therefore, crystal nuclei that are microcrystalline semiconductors are easily selectively formed. As a result, as shown in FIG. 2A, crystal nuclei 57a can be deposited on the gate insulating film 52b. High power is required to decompose fluorinated silane. Moreover, silane chloride can also be used instead of fluorine or fluorides such as hydrogen, silicon, and germanium.

A film formation process 444 for forming a microcrystalline silicon film illustrated in FIG. 4 is a process performed subsequent to the crystal nucleus formation process 443. The microcrystalline silicon film is formed by glow discharge plasma by mixing silane gas and hydrogen and / or a rare gas. Silane is diluted 10 to 2000 times with hydrogen and / or a noble gas. Therefore, a large amount of hydrogen and / or a rare gas is required. The heating temperature of the substrate is 100 ° C to 300 ° C, preferably 120 ° C to 220 ° C. In order to inactivate the growth surface of the microcrystalline silicon film with hydrogen and promote the growth of the microcrystalline silicon, the film formation is preferably performed at 120 ° C. to 220 ° C. In the film formation process 444, SiH radicals, SiH ₂ radicals, and SiH ₃ radicals, which are active species, are bonded to the crystal nuclei 57a to grow crystals. As a result, the microcrystalline semiconductor film 53a can be formed. At this time, since the microcrystalline semiconductor grows vertically with the crystal nucleus 57a as a seed, a crystal grows in a normal direction with respect to the gate insulating film 52b, and the columnar microcrystal 57c is formed as illustrated in FIG. A microcrystalline semiconductor film 53a can be formed. That is, a microcrystalline semiconductor film can be formed over the gate insulating film without forming an amorphous layer at the interface. Further, in the crystal nucleus formation process 443, crystal nuclei are formed using fluorinated silane, and in the film formation process 444 for forming a microcrystalline semiconductor film, fluorinated silane is not used, so that it is included in the microcrystalline semiconductor film. The concentration of fluorine can be reduced. In addition, since the microcrystalline semiconductor film is formed using silane without using fluorinated silane and silane, the generation of stress in the film can be reduced as compared with the case where the microcrystalline semiconductor film is formed using fluorinated silane. Yes, film peeling can be reduced.

The power in the film formation process 444 for forming the microcrystalline semiconductor film can be lower than that in the crystal nucleus formation process 443 so that ion bombardment can be reduced with respect to the crystal nucleus. The crystal can be grown without destroying.

Note that in the film formation process 444, as indicated by a broken line 448, fluorinated silane less than the flow rate in the crystal nucleus formation process 443 is introduced into the reaction chamber, whereby the amorphous semiconductor component in the microcrystalline semiconductor film is converted to fluorine radicals. Etching can be performed, and the proportion of the microcrystalline component in the microcrystalline semiconductor film 53a can be increased.

Further, the energy band width may be adjusted by mixing germanium hydride or germanium such as GeH ₄ or GeF ₄ in a gas such as silane, or adding carbon or germanium to silicon. When carbon is added to silicon, the energy bandwidth is widened, and when germanium is added to silicon, the energy bandwidth is narrowed.

In the conventional method for forming the microcrystalline semiconductor film 53, as shown in FIG. 3, the amorphous layer 49 is formed in the initial deposition stage due to factors such as impurities and lattice mismatch. In a thin film transistor, carriers flow in a microcrystalline semiconductor film in the vicinity of a gate insulating film. Therefore, when an amorphous layer 49 is formed at an interface, mobility is decreased, current amount is small, and electrical characteristics of the thin film transistor are reduced. It will decline.

However, as shown in this embodiment mode, by performing the crystal nucleus formation process and the film formation process, the microcrystalline semiconductor grows vertically using the crystal nucleus 57a as a seed, so that the crystallinity in the thickness direction of the film is increased. In addition, the crystallinity of the interface between the gate insulating film and the microcrystalline semiconductor film can be increased.

As shown in this embodiment, plasma is generated by applying high frequency power of 1 MHz to 20 MHz, typically 13.56 MHz, or high frequency power of VHF band from 20 MHz to about 120 MHz.

Note that by pre-coating a semiconductor film in the reaction chamber of the plasma CVD apparatus before the substrate carry-in 441, the metal constituting the reaction chamber can be prevented from being taken into the microcrystalline silicon film as an impurity. That is, by coating the reaction chamber with silicon, the reaction chamber can be prevented from being etched by plasma, and the concentration of impurities contained in the microcrystalline silicon film can be reduced.

In the film formation process 444, helium may be added to the reaction gas in addition to silane and hydrogen. Helium has the highest ionization energy of all gases at 24.5 eV, and there is a metastable state at a level of about 20 eV, which is slightly lower than the ionization energy. Only about 4 eV is required. Therefore, the discharge start voltage also shows the lowest value among all gases. From such characteristics, helium can maintain the plasma stably. In addition, since uniform plasma can be formed, the plasma density can be made uniform even when the area of the substrate on which the microcrystalline silicon film is deposited is increased.

After the formation of the microcrystalline silicon film is finished, the supply of the reactive gas such as silane and hydrogen and the high-frequency power is stopped, and the substrate unloading 445 is performed. When the film formation process is subsequently performed on another substrate, the process returns to the substrate carry-in 441 and the same process is performed. Cleaning 446 is performed in order to remove the film and powder attached to the reaction chamber.

The cleaning 446 performs plasma etching by introducing an etching gas typified by NF ₃ and SF ₆ . Further, the etching is performed by introducing a gas such as ClF ₃ that can be etched without using plasma. The cleaning 446 is preferably performed by turning off the substrate heating heater and lowering the temperature. This is to suppress generation of reaction by-products due to etching. After completion of the cleaning 446, the process returns to the substrate carry-in 441, and the same processing may be performed thereafter.

The microcrystalline semiconductor film here is a film including a semiconductor having an intermediate structure between amorphous and crystalline structures (including single crystal and polycrystal). This semiconductor is a semiconductor having a third state which is stable in terms of free energy, and is a crystalline one having a short-range order and having a lattice strain, and has a columnar or needle shape with a particle size of 0.5 to 20 nm. Crystals grow in the normal direction with respect to the substrate surface. In addition, a microcrystalline semiconductor and a non-single-crystal semiconductor are mixed. Microcrystalline silicon which is a typical example of a microcrystalline semiconductor has its Raman spectrum shifted to a lower frequency side than 520.5 cm ⁻¹ indicating single crystal silicon. That is, the peak of the Raman spectrum of microcrystalline silicon is between 520.5 cm ⁻¹ representing single crystal silicon and 480 cm ⁻¹ representing amorphous silicon. In addition, at least 1 atomic% or more of hydrogen or halogen is contained to terminate dangling bonds (dangling bonds). Further, by adding a rare gas element such as helium, argon, krypton, or neon to further promote lattice distortion, stability can be improved and a good microcrystalline semiconductor film can be obtained. A description of such a microcrystalline semiconductor film is disclosed in, for example, US Pat. No. 4,409,134.

Next, the laser beam 58 is irradiated from the surface of the microcrystalline semiconductor film 53a. The laser beam 58 is irradiated with energy that does not melt the microcrystalline semiconductor film. That is, the laser processing step (Laser Process, hereinafter referred to as “LP”) according to this embodiment is based on solid-phase crystal growth performed without melting the microcrystalline semiconductor film 53a by radiant heating. In other words, the deposited microcrystalline semiconductor film 53a uses a critical region where the liquid phase does not enter a liquid phase, and can be referred to as “critical growth” in that sense.

The laser beam 58 can be applied to the interface between the microcrystalline semiconductor film 53a and the gate insulating film 52b. Accordingly, using the crystal on the surface side of the microcrystalline semiconductor film 53a as a seed, solid-phase crystal growth can be performed from the surface at the interface of the gate insulating film, whereby a microcrystalline semiconductor film with improved crystallinity can be formed. In this specification, a microcrystalline semiconductor film obtained by performing LP treatment on the microcrystalline semiconductor film 53a after deposition is referred to as an LP-treated microcrystalline semiconductor film 53b. Solid phase crystal growth by LP treatment does not increase the crystal grain size, but rather improves the crystallinity in the thickness direction of the film. That is, the LP treatment improves the crystallinity of the interface region of the gate insulating film and improves the electrical characteristics of the thin film transistor having the bottom gate structure.

In such critical growth, the surface irregularities (convex bodies called ridges) found in conventional low-temperature polysilicon are not formed, and the surface of the LP-processed microcrystalline semiconductor film 53b is kept smooth. It is also a feature. As in this embodiment mode, a crystalline semiconductor film obtained by directly applying a laser beam 58 to a microcrystalline semiconductor film 53a after film formation is a conventional microcrystalline semiconductor film as deposited, which is obtained by conductive heating. The growth mechanism and film quality are clearly different from the modified microcrystalline semiconductor film (in Non-Patent Document 1).

Further, since the LP-processed microcrystalline semiconductor film 53b is composed of microcrystals, its resistance is lower than that of an amorphous semiconductor film. Therefore, a thin film transistor using the LP-processed microcrystalline semiconductor film 53b has a steep slope at a rising portion of a curve indicating current-voltage characteristics, has excellent responsiveness as a switching element, and can operate at high speed. In addition, by using the LP-processed microcrystalline semiconductor film 53b in the channel formation region of the thin film transistor, variation in the threshold value of the thin film transistor can be suppressed. Therefore, a display device with little variation in electrical characteristics can be manufactured.

In addition, the LP-processed microcrystalline semiconductor film 53b has higher mobility than the amorphous semiconductor film. Therefore, the area of the channel formation region, that is, the area of the thin film transistor can be reduced by using a thin film transistor in which the channel formation amount region is formed using the LP-processed microcrystalline semiconductor film 53b for switching the display element. . Therefore, the area of the thin film transistor shown per pixel is reduced, and the aperture ratio of the pixel can be increased. As a result, a display device with high resolution can be manufactured.

When an excimer laser is used as the laser beam 58, the pulse oscillation frequency is 1 Hz or more and less than 10 MHz, preferably 100 Hz to 10 kHz, and the laser energy is 0.2 to 0.35 J / cm ² (typically 0.2 to 0. 0. 3 J / cm ² ). When a YAG laser is used, the third harmonic is used and the pulse oscillation frequency is set to 1 Hz or more and less than 10 MHz, and the laser energy is set to 0.2 to 0.35 J / cm ² (typically 0.2 to 0.3 J). / Cm ² ).

As the laser oscillator that oscillates the laser beam 58, a laser oscillator capable of pulse oscillation or continuous oscillation can be used. The laser wavelength is in the visible to ultraviolet region (800 nm or less), preferably in the ultraviolet region (400 nm or less) so that the semiconductor film can efficiently absorb the laser beam. By irradiation with a laser beam in the ultraviolet region with a wavelength of 300 nm to 400 nm, the microcrystalline semiconductor film is efficiently absorbed. As the laser oscillator, KrF, ArF, XeCl, excimer laser oscillator such as _{XeF, N 2, He, He} -Cd, Ar, He-Ne, HF, gas laser oscillator such as _{CO 2, YAG, GdVO 4,} YVO 4 , YLF, YAlO ₃ , ScO ₃ , Lu ₂ O ₃ , Y ₂ O _3, etc., a solid-state laser oscillator using a crystal doped with Cr, Nd, Er, Ho, Ce, Co, Ti, Yb, or Tm A solid-state laser such as a KGW laser, a KYW laser, an alexandrite laser, a Ti: sapphire laser, a metal vapor laser oscillator such as a helium cadmium laser, or the like can be used. In the solid-state laser oscillator, it is preferable to apply the second to fifth harmonics of the fundamental wave.

Typically, an excimer laser beam having a wavelength of 400 nm or less, typically 308 nm, or the third harmonic (355 nm) of a YAG laser is used as the laser beam 58.

The LP process is performed by condensing into a rectangular long shape and forming a linear laser beam, whereby the microcrystalline semiconductor film 53a on a glass substrate of, for example, 730 mm × 920 mm can be processed by one laser beam scan. In this case, the linear laser beam overlapping ratio (overlap ratio) is set to 0 to 95% (preferably 0 to 67%). Thereby, the processing time per substrate can be shortened and productivity can be improved. The shape of the laser beam is not limited to a linear shape, and it can be similarly processed even if it is a planar shape. Further, the present LP treatment is not limited to the size of the glass substrate, and can be applied to various things.

When a continuous wave laser beam is used as the laser beam 58, it is possible to improve the throughput of LP processing by providing a polygon mirror or a galvano mirror between the oscillator and the substrate and scanning the laser beam at high speed. For example, it is possible to perform LP processing on a microcrystalline semiconductor film formed on a glass substrate of 730 mm × 920 mm or a glass substrate larger than that.

Note that the microcrystalline semiconductor film 53a may be irradiated with the laser beam 58 in an argon atmosphere, a hydrogen atmosphere, an argon and hydrogen atmosphere, a nitrogen atmosphere, or the like. In this manner, by irradiating the microcrystalline semiconductor film 53a with a laser beam in an inert atmosphere, an oxide film is hardly formed on the surface of the LP-processed microcrystalline semiconductor film 53b.

In addition, before the microcrystalline semiconductor film 53a is irradiated with the laser beam 58, the surface of the microcrystalline semiconductor film 53a is washed so that impurities attached to the surface of the microcrystalline semiconductor film 53a are irradiated with the laser beam 58. Mixing in the semiconductor film can be prevented.

Alternatively, the microcrystalline semiconductor film 53a may be irradiated with the laser beam 58 and the microcrystalline semiconductor film 53a may be heated. Typically, the crystallinity of the microcrystalline semiconductor film 53a can be increased by irradiating the laser beam 58 while heating the substrate 50 at 300 ° C. to 400 ° C. Alternatively, the temperature of the microcrystalline semiconductor film 53a may be instantaneously increased by irradiating the microcrystalline semiconductor film 53a with a laser beam and irradiating strong light. As a representative example of strong light, infrared light, particularly infrared light having a peak at 1 μm to 2 μm (preferably halogen light (1.3 μm)) can be used.

Note that in the case where an oxide film is formed on the surface of the LP-processed microcrystalline semiconductor film 53b, the oxide film is preferably removed by wet etching. As a result, it is possible to reduce inhibition of carrier movement by the insulating film formed at the interface between the LP-processed microcrystalline semiconductor film 53b and the buffer layer 54.

In the first example of the method for forming a microcrystalline semiconductor film, in any case, LP treatment is performed on the surface of the gate insulating film 52b from the semiconductor crystal nucleus formed of fluorinated silane and the crystal nucleus in the microcrystalline semiconductor film. Thus, both of the crystal grains reaching the interface between the gate insulating film and the microcrystalline semiconductor film exist. That is, it is effective because an amorphous semiconductor layer is not formed on the surface of the gate insulating film 52b.

In this way, the first microcrystalline semiconductor film forming method is described. As another means for preventing the amorphous layer from being formed on the surface of the gate insulating film 52b, the second microcrystalline semiconductor film is used. The forming method is also effective. In other words, after the crystal nuclei in the microcrystalline semiconductor film are grown to the vicinity of the interface with the gate insulating film 52b by LP, an amorphous semiconductor that is more easily etched than the microcrystalline semiconductor is selectively etched.

A second microcrystalline semiconductor film formation method will be described with reference to FIG. 5 which is an enlarged cross-sectional view of the interface between the gate insulating film and the microcrystalline semiconductor film. A process of selectively etching an amorphous semiconductor will be described with reference to FIGS.

First, as in the first microcrystalline semiconductor film formation method, a microcrystalline semiconductor film is formed over the gate insulating film 52b at the interface with the surface of the gate insulating film 52b in FIG. The step of forming the microcrystalline semiconductor film may be an ordinary film forming method, but preferably, a method of forming crystal nuclei on the gate insulating film 52b is used as in the first microcrystalline semiconductor film forming method. .

Next, the laser beam 58 is irradiated from the surface of the microcrystalline semiconductor film 53a. The laser beam 58 is irradiated with energy that does not melt the microcrystalline semiconductor film. At this time, using the crystal on the surface side of the microcrystalline semiconductor film 53a as a seed, solid-phase crystal growth is performed from the surface at the interface of the gate insulating film to form the LP-processed microcrystalline semiconductor film 53b with improved crystallinity. Can do.

Next, the amorphous semiconductor is further selectively etched on the surface of the LP-processed microcrystalline semiconductor film 53b to enhance the crystallinity of the microcrystalline semiconductor film.

FIG. 6A is a time chart illustrating a process of selectively etching the amorphous semiconductor, and shows a typical example. Here, similarly to the method described with reference to FIG. 4, after the base pretreatment 442 is performed, a process 449 for increasing crystallinity is performed. In the treatment 449 for increasing crystallinity, fluorine or a fluoride such as hydrogen, silicon, germanium, or the like, here, fluorinated silane gas is used, and glow discharge plasma is used. Fluorine radicals are highly reactive and selectively etch amorphous semiconductors that are more easily etched than microcrystalline semiconductors, but the volume of the film is not necessarily required in this step.

As a result, as shown in FIG. 5A, a highly crystalline semiconductor film 53c can be formed so as to cover the LP-processed microcrystalline semiconductor film 53b. At this time, by increasing the time of the process 449 for increasing crystallinity shown in FIG. 6A or increasing the processing power, the thickness of the semiconductor film 53c with high crystallinity is increased as shown in FIG. Can be changed. Further, if the thickness of the LP-processed microcrystalline semiconductor film 53b is small with respect to the processing time, the entire LP-processed microcrystalline semiconductor film 53b can be a highly crystalline semiconductor film.

The LP-treated microcrystalline semiconductor film 53b thus formed as shown in FIG. 1B has weak n-type conductivity when no impurity element is intentionally added for the purpose of valence electron control. Therefore, for a microcrystalline semiconductor film functioning as a channel formation region of a thin film transistor, a threshold value is controlled by adding an impurity element imparting p-type at the same time as or after the film formation. It becomes possible. The impurity element imparting p-type is typically boron, and an impurity gas such as B ₂ H ₆ or BF ₃ may be mixed into silicon hydride at a rate of 1 ppm to 1000 ppm, preferably 1 to 100 ppm. . The boron concentration is preferably 1 × 10 ^{14 to} 6 × 10 ¹⁶ atoms / cm ³ , for example.

The LP-processed microcrystalline semiconductor film 53b is formed to be 1 nm to 200 nm thick, preferably 1 nm to 100 nm, preferably 1 nm to 50 nm. The LP-processed microcrystalline semiconductor film 53b functions as a channel formation region of a thin film transistor to be formed later. Further, the LP-processed microcrystalline semiconductor film 53b may be etched to reduce the thickness of the LP-processed microcrystalline semiconductor film 53b. By setting the thickness of the LP-processed microcrystalline semiconductor film 53b to 1 nm to 50 nm, a fully depleted thin film transistor can be manufactured.

Further, the oxygen concentration of the LP-processed microcrystalline semiconductor film 53b is 5 × 10 ¹⁹ atoms / cm ³ or less, more preferably 1 × 10 ¹⁹ atoms / cm ³ or less, and the nitrogen and carbon concentrations are 3 × 10 ¹⁸ atoms, respectively. / Cm ³ or less is preferable. By reducing the concentration of oxygen, nitrogen, and carbon in the microcrystalline semiconductor film, the microcrystalline semiconductor film can be prevented from becoming n-type.

Further, since the LP-processed microcrystalline semiconductor film 53b is composed of microcrystals, its resistance is lower than that of an amorphous semiconductor film. Therefore, a thin film transistor using the LP-processed microcrystalline semiconductor film 53b has a steep slope at a rising portion of a curve indicating current-voltage characteristics, has excellent responsiveness as a switching element, and can operate at high speed. In addition, by using the LP-processed microcrystalline semiconductor film 53b in the channel formation region of the thin film transistor, variation in the threshold value of the thin film transistor can be suppressed. Therefore, a display device with little variation in electrical characteristics can be manufactured.

In addition, the LP-processed microcrystalline semiconductor film 53b has higher mobility than the amorphous semiconductor film. Therefore, by using a thin film transistor in which the channel formation region is formed using the LP-processed microcrystalline semiconductor film 53b for switching the display element, the area of the channel formation region, that is, the area of the thin film transistor can be reduced. Therefore, the area of the thin film transistor shown per pixel is reduced, and the aperture ratio of the pixel can be increased. As a result, a display device with high resolution can be manufactured.

Next, as illustrated in FIG. 1C, a buffer layer 54 and a semiconductor film 55 to which an impurity imparting one conductivity type is added are formed over the LP-processed microcrystalline semiconductor film 53b. Next, a mask pattern 56 is formed over the semiconductor film 55 to which an impurity imparting one conductivity type is added.

As the buffer layer 54, an amorphous semiconductor film can be formed by a plasma CVD method using silane gas. Alternatively, the amorphous semiconductor film can be formed by diluting the silane gas with one or more kinds of rare gas elements selected from helium, argon, krypton, and neon. An amorphous semiconductor film containing hydrogen can be formed using hydrogen at a flow rate of 1 to 10 times, more preferably 1 to 5 times the flow rate of silane gas. Further, halogen such as fluorine, chlorine, bromine, or iodine, or nitrogen may be added to the hydrogenated semiconductor film.

Further, in the second microcrystalline semiconductor film forming method, the buffer layer 54 may be formed continuously immediately after the amorphous semiconductor is selectively etched. That is, in the time chart of FIG. 6B, the buffer layer film formation process 444b is added as compared with FIG. 6A, and the throughput can be improved by maintaining the conditions such as the substrate temperature. it can.

The buffer layer 54 can be formed using an amorphous semiconductor film by sputtering with hydrogen or a rare gas using a semiconductor target such as silicon or germanium as a target.

The buffer layer 54 is preferably formed using an amorphous semiconductor film that does not include crystal grains. For this reason, when forming by a high frequency plasma CVD method or a microwave plasma CVD method with a frequency of several tens to several hundreds of MHz, the film formation conditions are controlled so that the amorphous semiconductor film does not contain crystal grains. It is preferable to do.

The buffer layer 54 may be partially etched in a later formation process of the source region and the drain region, but it is preferable to form the buffer layer 54 with such a thickness that a part of the buffer layer 54 remains at that time. Typically, it is preferable to form with a thickness of 30 nm to 500 nm, preferably 50 nm to 100 nm. In a display device with a high applied voltage of the thin film transistor (for example, about 15 V), typically a liquid crystal display device, when the buffer layer 54 is formed thick, the withstand voltage increases, and the thin film transistor deteriorates even when a high voltage is applied to the thin film transistor. You can avoid that.

By forming an amorphous semiconductor film and further an amorphous semiconductor film containing hydrogen, nitrogen, or halogen on the surface of the LP-processed microcrystalline semiconductor film 53b, the LP-processed microcrystalline semiconductor film 53b is included in the LP-processed microcrystalline semiconductor film 53b. It is possible to prevent natural oxidation of the crystal grain surface. In particular, in a region where an amorphous semiconductor is in contact with microcrystalline grains, cracks are likely to occur due to local stress. When this crack comes into contact with oxygen, the crystal grains are oxidized and silicon oxide is formed. However, by forming the buffer layer 54 on the surface of the LP-processed microcrystalline semiconductor film 53b, oxidation of microcrystalline grains can be prevented.

In addition, since the buffer layer 54 is formed using an amorphous semiconductor film or an amorphous semiconductor film containing hydrogen, nitrogen, or halogen, the energy gap is different from that of the LP-processed microcrystalline semiconductor film 53b. Compared to the LP-processed microcrystalline semiconductor film 53b, the mobility is high, the resistance is high, and the mobility is as low as 1/5 to 1/10. Therefore, in a thin film transistor formed later, a buffer layer formed between the source region and the drain region and the LP-processed microcrystalline semiconductor film 53b functions as a high-resistance region, and the LP-processed microcrystalline semiconductor film 53b Functions as a channel formation region. Therefore, off current of the thin film transistor can be reduced. When the thin film transistor is used as a switching element of a display device, the contrast of the display device can be improved.

Note that after the LP-processed microcrystalline semiconductor film 53b is formed, the buffer layer 54 is preferably formed at a temperature of 300 ° C. to 400 ° C. by a plasma CVD method. By this film formation process, hydrogen is supplied to the LP-processed microcrystalline semiconductor film 53b, and an effect equivalent to that obtained by hydrogenating the LP-processed microcrystalline semiconductor film 53b is obtained. That is, by depositing the buffer layer 54 on the LP-processed microcrystalline semiconductor film 53b, hydrogen can be diffused into the LP-processed microcrystalline semiconductor film 53b to terminate dangling bonds.

The semiconductor film 55 to which an impurity imparting one conductivity type is added may be formed by adding phosphorus as a typical impurity element when an n-channel thin film transistor is formed. Impurities such as PH ₃ are added to silicon hydride. Add gas. In the case of forming a p-channel thin film transistor, boron may be added as a typical impurity element, and an impurity gas such as B ₂ H ₆ may be added to silicon hydride. The semiconductor film 55 to which an impurity imparting one conductivity type is added can be formed using a microcrystalline semiconductor film body or an amorphous semiconductor. The semiconductor film 55 to which an impurity imparting one conductivity type is added is formed with a thickness of 2 nm to 50 nm. By reducing the thickness of the semiconductor film to which an impurity imparting one conductivity type is added, throughput can be improved.

Next, an example of a structure suitable for forming a gate insulating film and a microcrystalline semiconductor film is described as an example of a plasma CVD apparatus to which the reaction chamber is applied.

FIG. 7 shows an example of a multi-chamber plasma CVD apparatus having a plurality of reaction chambers. This apparatus includes a common chamber 423, a load / unload chamber 422, a first reaction chamber 400a, a second reaction chamber 400b, and a third reaction chamber 400c. The substrate loaded in the cassette of the load / unload chamber 422 has a single-wafer structure that is carried into and out of each reaction chamber by the transport mechanism 426 of the common chamber 423. A gate valve 425 is provided between the common chamber 423 and each chamber so that processes performed in each reaction chamber do not interfere with each other.

Each reaction chamber is divided according to the type of thin film to be formed. For example, the first reaction chamber 400a is formed with an insulating film such as a gate insulating film, the second reaction chamber 400b is formed with a microcrystalline semiconductor film and a buffer layer that form a channel, and the third reaction chamber 400c is formed with a source and The reaction chamber is filled with a semiconductor film to which an impurity imparting one conductivity type for forming a drain is added. Of course, the number of reaction chambers is not limited to this, and can be arbitrarily increased or decreased as necessary. Further, one film may be formed in one reaction chamber, or a plurality of films may be formed in one reaction chamber.

A turbo molecular pump 419 and a dry pump 420 are connected to each reaction chamber as exhaust means. The evacuation means is not limited to the combination of these vacuum pumps, and other vacuum pumps can be applied as long as they can be evacuated to a degree of vacuum of approximately 10 ⁻¹ Pa to 10 ⁻⁵ Pa. A butterfly valve 417 is provided between the exhaust means 430 and each reaction chamber, whereby the vacuum exhaust can be shut off, and the exhaust speed is controlled by the conductance valve 418 so that the pressure in each reaction chamber is controlled. Can be adjusted.

The gas supply means 408 includes a cylinder 410 filled with a gas used for a process such as a semiconductor material gas represented by silane or a rare gas, a stop valve 412, a mass flow controller 413, and the like. The gas supply means 408g is connected to the first reaction chamber 400a and supplies a gas for forming a gate insulating film. The gas supply means 408i is connected to the second reaction chamber 100b and supplies gas for crystal nuclei, microcrystalline semiconductor film, and buffer layer. The gas supply means 408n is connected to the third reaction chamber 400c and supplies, for example, a gas for an n-type semiconductor film. The gas supply means 408a supplies hydrogen, and the gas supply means 408f is a system for supplying an etching gas used for cleaning the reaction chamber, and these are configured as a common line for each reaction chamber.

Each reaction chamber is connected with high-frequency power supply means 403 for forming plasma. The high frequency power supply means 403 includes a high frequency power supply 404 and a matching unit 406.

FIG. 8 shows a configuration in which a fourth reaction chamber 400d is added to the configuration of the multi-chamber plasma CVD apparatus of FIG. A gas supply means 408b is connected to the fourth reaction chamber 400d. In addition, the configuration of the high-frequency power supply means and the exhaust means is the same. Each reaction chamber can be used properly depending on the type of thin film to be formed. For example, the first reaction chamber 400a forms an insulating film such as a gate insulating film, the second reaction chamber 400b forms a microcrystalline semiconductor film that forms crystal nuclei and channels, and the fourth reaction chamber 400d forms a channel. The third reaction chamber 400c can be used as a reaction chamber for forming a semiconductor film to which an impurity imparting one conductivity type for forming a source and a drain is added. Since each thin film has an optimum film formation temperature, it is easy to manage the film formation temperature by separating reaction chambers individually. Furthermore, since the same film type can be repeatedly formed, the influence of residual impurities on the film formation history can be eliminated.

Next, as shown in FIG. 1C, a mask pattern 56 is formed over the semiconductor film 55 to which an impurity imparting one conductivity type is added.

The mask pattern 56 is formed by a photolithography technique. Here, using a second photomask, a resist applied to the semiconductor film 55 to which an impurity imparting one conductivity type is added is exposed and developed to form a mask pattern 56.

Next, the LP-processed microcrystalline semiconductor film 53b, the buffer layer 54, and the semiconductor film 55 to which an impurity imparting conductivity is added are etched and separated using the mask pattern 56, which is illustrated in FIG. As described above, the microcrystalline semiconductor film 61, the buffer layer 62, and the semiconductor film 63 to which an impurity imparting a conductivity type is added are formed. Thereafter, the mask pattern 56 is removed. Note that FIG. 1C (excluding the mask pattern 56) corresponds to a cross-sectional view taken along a line AB in FIG.

Since the side surfaces of the end portions of the microcrystalline semiconductor film 61 and the buffer layer 62 are inclined, leakage current is prevented from being generated between the source region and the drain region formed over the buffer layer 62 and the microcrystalline semiconductor film 61. Is possible. In addition, leakage current can be prevented from being generated between the wiring layer and the microcrystalline semiconductor film 61. The inclination angles of the side surfaces of the end portions of the microcrystalline semiconductor film 61 and the buffer layer 62 are 90 ° to 30 °, preferably 80 ° to 45 °. By setting such an angle, disconnection of the wiring layer due to the step shape can be prevented.

Next, as illustrated in FIG. 9A, conductive films 65a to 65c are formed over the semiconductor film 63 to which an impurity imparting conductivity is added and the gate insulating film 52b, and masks are formed over the conductive films 65a to 65c. A pattern 66 is formed. The conductive films 65a to 65c are preferably formed using a single layer or a stacked layer of aluminum or an aluminum alloy to which a heat resistance improving element such as copper, silicon, titanium, neodymium, scandium, or molybdenum or a hillock preventing element is added. In addition, a film in contact with a semiconductor film to which an impurity imparting one conductivity type is added is formed using titanium, tantalum, molybdenum, tungsten, or a nitride of these elements, and aluminum or an aluminum alloy is formed thereover. It is good also as a laminated structure. Furthermore, a laminated structure in which the upper and lower surfaces of aluminum or an aluminum alloy are sandwiched between titanium, tantalum, molybdenum, tungsten, or nitrides of these elements may be employed. Here, a conductive film having a structure in which three layers of conductive films 65a to 65c are stacked is shown as the conductive film. A laminated conductive film using a titanium film as the films 65a and 65c and an aluminum film as the conductive film 65b is shown. The conductive films 65a to 65c are formed by a sputtering method or a vacuum evaporation method.

The mask pattern 66 can be formed in the same manner as the mask pattern 56.

Next, as illustrated in FIG. 9B, part of the conductive films 65a to 65c is etched to form a pair of wiring layers 71a to 71c (functioning as a source electrode and a drain electrode). Here, when the conductive films 65a to 65c are wet-etched using the mask pattern 66 formed by a photolithography process using a third photomask, the ends of the conductive films 65a to 65c are selectively etched. As a result, the wiring layers 71a to 71c having a smaller area than the mask pattern 66 can be formed.

Next, using the mask pattern 66, the semiconductor film 63 to which an impurity imparting one conductivity type is added is etched and separated. As a result, a pair of source and drain regions 72 as shown in FIG. 9C can be formed. Note that part of the buffer layer 62 is also etched in the etching step. A buffer layer partially etched and having a recess is referred to as a buffer layer 73. The step of forming the source region and the drain region and the concave portion of the buffer layer can be formed in the same step. By setting the depth of the concave portion of the buffer layer to 1/2 to 1/3 of the thickest region of the buffer layer, the distance between the source region and the drain region can be increased. Leakage current between the drain regions can be reduced. Thereafter, the mask pattern 66 is removed.

Note that FIG. 9C (excluding the mask pattern 66) corresponds to a cross-sectional view taken along a line AB in FIG. As shown in FIG. 11B, it can be seen that the end portions of the source region and the drain region 72 are located outside the end portion of the wiring layer 71c. Further, the end portion of the buffer layer 73 is located outside the end portions of the wiring layer 71 c and the source and drain regions 72. One of the wiring layers has a shape surrounding the other of the source region and the drain region (specifically, a U shape or a C shape). Therefore, the area of the region where carriers move can be increased, so that the amount of current can be increased and the area of the thin film transistor can be reduced. In addition, since the microcrystalline semiconductor film and the wiring layer are overlapped over the gate electrode, the influence of the unevenness of the gate electrode is small, so that coverage can be reduced and leakage current can be suppressed.

Through the above process, a channel-etched thin film transistor 74 can be formed.

Next, as illustrated in FIG. 10A, a protective insulating film 76 is formed over the wiring layers 71a to 71c, the source and drain regions 72, the buffer layer 73, the microcrystalline semiconductor film 61, and the gate insulating film 52b. . The protective insulating film 76 can be formed in the same manner as the gate insulating films 52a and 52b. Note that the protective insulating film 76 is for preventing intrusion of contaminant impurities such as organic substances, metal substances, and water vapor floating in the air, and is preferably a dense film. In addition, by using a silicon nitride film for the protective insulating film 76, the oxygen concentration in the buffer layer 87 can be 5 × 10 ¹⁹ atoms / cm ³ or less, preferably 1 × 10 ¹⁹ atoms / cm ³ or less. The oxidation of the buffer layer 87 can be prevented.

Next, a contact hole is formed by etching a part of the protective insulating film 76 using a mask pattern formed on the protective insulating film 76 using a fourth photomask, and the pixel in contact with the wiring layer 71c in the contact hole. An electrode 77 is formed. Note that FIG. 10B corresponds to a cross-sectional view taken along a line AB in FIG.

The pixel electrode 77 includes indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, ITO, indium zinc oxide, and silicon oxide. A light-transmitting conductive material such as indium tin oxide can be used.

The pixel electrode 77 can be formed using a conductive composition containing a conductive high molecule (also referred to as a conductive polymer). The pixel electrode formed using the conductive composition preferably has a sheet resistance of 10,000 Ω / □ or less and a light transmittance of 70% or more at a wavelength of 550 nm. Moreover, it is preferable that the resistivity of the conductive polymer contained in the conductive composition is 0.1 Ω · cm or less.

As the conductive polymer, a so-called π-electron conjugated conductive polymer can be used. For example, polyaniline or a derivative thereof, polypyrrole or a derivative thereof, polythiophene or a derivative thereof, or a copolymer of two or more kinds thereof can be given.

Here, as the pixel electrode 77, an ITO film is formed by a sputtering method, and then a resist is applied on the ITO. Next, the resist is exposed and developed using a fifth photomask to form a mask pattern. Next, the pixel electrode 77 is formed by etching the ITO using the mask pattern.

Through the above steps, a thin film transistor and an element substrate that can be used for a display device can be formed.

Next, a method for manufacturing a thin film transistor, which is different from the above mode, is described with reference to FIGS. Here, a process for manufacturing a thin film transistor using a process capable of reducing the number of photomasks from the above mode is described.

As in FIGS. 1A and 1B, a conductive film is formed over the substrate 50, a resist is applied over the conductive film, and a mask pattern is formed by a photolithography process using a first photomask. The gate electrode 51 is formed by etching a part of the conductive film using Next, as illustrated in FIG. 12A, gate insulating films 52 a and 52 b are formed over the gate electrode 51. Then, by the same process as the first microcrystalline semiconductor film forming method or the second microcrystalline semiconductor film forming method, nucleation and crystal growth are performed to form the LP-processed microcrystalline semiconductor film 53b. Next, a buffer layer 54, a semiconductor film 55 to which an impurity imparting one conductivity type is added, and conductive films 65a to 65c are sequentially formed over the LP-processed microcrystalline semiconductor film 53b. Next, a resist 80 is applied over the conductive film 65a.

As the resist 80, a positive resist or a negative resist can be used. Here, a positive resist is used.

Next, the resist 80 is exposed to light by irradiating the resist 80 with light using the multi-tone mask 59 as a second photomask.

Here, exposure using the multi-tone mask 59 will be described with reference to FIG.

A multi-tone mask is a mask capable of performing three exposure levels on an exposed portion, an intermediate exposed portion, and an unexposed portion, and a plurality of (typically two types) can be obtained by one exposure and development process. It is possible to form a mask pattern having a region with a thickness of. Therefore, the number of photomasks can be reduced by using a multi-tone mask.

Typical examples of the multi-tone mask include a gray-tone mask 59a as shown in FIG. 13A and a half-tone mask 59b as shown in FIG. 13C.

As shown in FIG. 13A, the gray tone mask 59a includes a light-transmitting substrate 163, a light shielding portion 164 and a diffraction grating 165 formed thereon. In the light shielding portion 164, the amount of transmitted light is 0%. On the other hand, the diffraction grating 165 can control the amount of transmitted light by setting the interval between the light transmitting portions such as slits, dots, and meshes to be equal to or less than the resolution limit of the light used for exposure. Note that the diffraction grating 165 can use either a periodic slit, a dot, or a mesh, or an aperiodic slit, dot, or mesh.

As the substrate 163 having a light-transmitting property, a substrate having a light-transmitting property such as quartz can be used. The light shielding portion 164 and the diffraction grating 165 can be formed using a light shielding material that absorbs light such as chromium or chromium oxide.

When the gray-tone mask 59a is irradiated with exposure light, as shown in FIG. 13B, the light transmission amount 166 is 0% in the light shielding portion 164, and the light shielding portion 164 and the diffraction grating 165 are not provided. In the region, the light transmission amount 166 is 100%. The diffraction grating 165 can be adjusted in the range of 10 to 70%. The light transmission amount in the diffraction grating 165 can be adjusted by adjusting the interval and pitch of slits, dots, or meshes of the diffraction grating.

As shown in FIG. 13C, the halftone mask 59b includes a light-transmitting substrate 163, a semi-transmissive portion 167 and a light-shielding portion 168 formed thereon. For the semi-transmissive portion 167, MoSiN, MoSi, MoSiO, MoSiON, CrSi, or the like can be used. The light shielding portion 168 can be formed using a light shielding material that absorbs light, such as chromium or chromium oxide.

When the halftone mask 59b is irradiated with exposure light, as shown in FIG. 13D, in the light shielding portion 168, the light transmission amount 169 is 0%, and the light shielding portion 168 and the semi-transmissive portion 167 are provided. In the absence region, the light transmission amount 169 is 100%. Moreover, in the semi-transmissive part 167, it can adjust in 10 to 70% of range. The amount of light transmitted through the semi-transmissive portion 167 can be adjusted by adjusting the material of the semi-transmissive portion 167.

By developing after exposure using a multi-tone mask, a mask pattern 81 having regions with different film thicknesses can be formed as shown in FIG.

Next, the LP-processed microcrystalline semiconductor film 53b, the buffer layer 54, the semiconductor film 55 to which an impurity imparting one conductivity type is added, and the conductive films 65a to 65c are etched and separated by the mask pattern 81. As a result, as shown in FIG. 14A, a microcrystalline semiconductor film 61, a buffer layer 62, a semiconductor film 63 to which an impurity imparting one conductivity type is added, and conductive films 85a to 85c can be formed. . 14A (excluding the mask pattern 81) corresponds to a cross-sectional view taken along a line AB in FIG.

Next, the mask pattern 81 is ashed. As a result, the resist area is reduced and the thickness is reduced. At this time, the resist in a thin region (a region overlapping with a part of the gate electrode 51) is removed, and a separated mask pattern 86 can be formed as shown in FIG.

Next, using the mask pattern 86, the conductive films 85a to 85c are etched and separated. As a result, a pair of wiring layers 92a to 92c as shown in FIG. 14B can be formed. When the conductive films 89a to 89c are wet-etched using the mask pattern 86, the ends of the conductive films 89a to 89c are selectively etched. As a result, the wiring layers 92 a to 92 c having a smaller area than the mask pattern 86 can be formed.

Next, using the mask pattern 86, the semiconductor film 63 to which an impurity imparting one conductivity type is added is etched, so that a pair of source and drain regions 88 is formed. Note that part of the buffer layer 62 is also etched in the etching step. The partially etched buffer layer is referred to as a buffer layer 87. A concave portion is formed in the buffer layer 87. The step of forming the source region and the drain region and the concave portion of the buffer layer can be formed in the same step. Here, a part of the buffer layer 87 is partly etched by the mask pattern 86 whose area is reduced as compared with the mask pattern 81, so that the buffer layer 87 protrudes outside the source region and the drain region 88. . Thereafter, the mask pattern 86 is removed. In addition, the end portions of the wiring layers 92a to 92c and the end portions of the source region and the drain region 88 are not coincident with each other, and the end portions of the source region and the drain region 88 are located outside the end portions of the wiring layers 92a to 92c. Is formed.

As shown in FIG. 14C, the ends of the wiring layers 92a to 92c and the ends of the source region and the drain region 88 are not aligned and shifted, so that the end portions of the wiring layers 92a to 92c are formed. Since the distance is increased, it is possible to prevent a leakage current or a short circuit between the wiring layers. Therefore, a highly reliable thin film transistor can be manufactured.

Through the above process, a channel-etched thin film transistor 83 can be formed. In addition, a thin film transistor can be formed using two photomasks.

Next, as illustrated in FIG. 15A, a protective insulating film 76 is formed over the wiring layers 92a to 92c, the source and drain regions 88, the buffer layer 87, the microcrystalline semiconductor film 90, and the gate insulating film 52b. . The protective insulating film 76 can be formed in the same manner as the gate insulating films 52a and 52b.

Next, a part of the protective insulating film 76 is etched using a mask pattern formed using a third photomask to form a contact hole. Next, the pixel electrode 77 in contact with the wiring layer 92c in the contact hole is formed. Here, as the pixel electrode 77, an ITO film is formed by a sputtering method, and then a resist is applied on the ITO. Next, the resist is exposed and developed using a fourth photomask to form a mask pattern. Next, the pixel electrode 77 is formed by etching the ITO using the mask pattern. Note that FIG. 15B corresponds to a cross-sectional view taken along a line AB in FIG.

Through the above, a thin film transistor and an element substrate that includes the thin film transistor and can be used for a display device can be formed.

9B or 14B, after the wiring layers 92a to 92c are formed, the mask pattern 86 is removed, and an impurity imparting one conductivity type is added using the wiring layers 92a to 92c as a mask. The semiconductor film 63 may be etched. As a result, a thin film transistor can be formed in which the wiring layers 71a to 71c and the end portions of the source region and the drain region 88 coincide. Here, after removing the mask pattern 86 in FIG. 9B, the semiconductor layer 63 to which an impurity imparting one conductivity type is added is etched using the wiring layers 92a to 92c as masks, so that a source region and a drain region are formed. FIG. 17B shows a thin film transistor in which the end portion 89 and the end portions of the wiring layers 92a to 92c are aligned.

Through the above process, a channel-etched thin film transistor can be formed. A channel-etched thin film transistor has a small number of manufacturing steps and can reduce costs. Further, field effect mobility of 1 to ²⁰ cm ² / V · sec can be obtained by forming a channel formation region using a microcrystalline semiconductor film. Therefore, this thin film transistor can be used as an element for switching a pixel in the pixel portion and an element for forming a driving circuit on the scanning line (gate line) side.

Note that although a channel-etched thin film transistor is described in this embodiment mode, a microcrystalline semiconductor film can be used for a channel formation region of the channel protective thin film transistor.

According to this embodiment mode, a highly reliable thin film transistor with excellent electrical characteristics and a display substrate including the thin film transistor can be manufactured.

(Embodiment 2)
Although an example in which a bottom-gate transistor is formed using a microcrystalline semiconductor film is described in Embodiment 1, the microcrystalline semiconductor film of the present invention can be formed as a matter of course when used for another purpose. That is, the microcrystalline semiconductor film is formed over the insulating film by the first microcrystalline semiconductor film forming method as shown in FIGS. 2A to 2C, or the second microcrystalline semiconductor film. What is necessary is just to form as shown in FIG. 5 (A)-FIG.2 (B) with a formation method.

However, since any of the formation methods is formed by glow discharge using a deposition gas, it is desirable to form on an insulating film in which no peeling occurs by such a film formation method. In addition, a glass substrate, a metal substrate, a ceramic substrate, or the like can be used as appropriate as a supporting substrate. However, in order to perform LP processing, a material having sufficient heat resistance for the processing is used.

In Embodiment Mode 1, a laser beam is irradiated from the surface of the microcrystalline semiconductor film. If there is no structure that shields the laser beam such as the gate electrode between the microcrystalline semiconductor film and the substrate like the bottom gate structure and the substrate does not reflect or absorb the laser energy, It is also possible to perform LP processing by irradiating a laser beam from the substrate side.

As described above, a microcrystalline semiconductor film with improved crystallinity can be formed.

(Embodiment 3)
In this embodiment, a liquid crystal display device including the thin film transistor described in Embodiment 1 as one embodiment of the display device is described below. Here, a VA (Vertical Alignment) liquid crystal display device will be described with reference to FIGS. The VA liquid crystal display device is a type of a method for controlling the alignment of liquid crystal molecules in a liquid crystal panel. The VA liquid crystal display device is a method in which liquid crystal molecules face a vertical direction with respect to a panel surface when no voltage is applied. In the present embodiment, the pixel (pixel) is divided into several regions (sub-pixels), and each molecule is devised to tilt the molecules in different directions. This is called multi-domain or multi-domain design. In the following description, a liquid crystal display device considering multi-domain design will be described.

18 and 19 show a pixel structure of a VA liquid crystal panel. FIG. 19 is a plan view of the substrate 600, and FIG. 18 shows a cross-sectional structure corresponding to the cutting line YZ shown in the drawing. The following description will be given with reference to both the drawings.

In this pixel structure, one pixel has a plurality of pixel electrodes, and a thin film transistor is connected to each pixel electrode through a planarization film 622. Each thin film transistor is configured to be driven by a different gate signal. In other words, a multi-domain designed pixel has a configuration in which signals applied to individual pixel electrodes are controlled independently.

The pixel electrode 624 is connected to the thin film transistor 628 through a wiring 618 in the contact hole 623. The pixel electrode 626 is connected to the thin film transistor 629 through a wiring 619 in a contact hole 627. The gate wiring 602 of the thin film transistor 628 and the gate wiring 603 of the thin film transistor 629 are separated so that different gate signals can be given. On the other hand, the wiring 616 functioning as a data line is used in common for the thin film transistor 628 and the thin film transistor 629. The thin film transistor 628 and the thin film transistor 629 can be manufactured using the method described in Embodiment 1.

The pixel electrode 624 and the pixel electrode 626 have different shapes and are separated by a slit 625. A pixel electrode 626 is formed so as to surround the outside of the V-shaped pixel electrode 624. The timing of the voltage applied to the pixel electrode 624 and the pixel electrode 626 is different depending on the thin film transistor 628 and the thin film transistor 629, thereby controlling the alignment of the liquid crystal. When the gate wiring 602 and the gate wiring 603 are supplied with different gate signals, operation timings of the thin film transistor 628 and the thin film transistor 629 can be different. An alignment film 646 is formed over the pixel electrodes 624 and 626.

A counter substrate 601 is provided with a light shielding film 632, a second coloring film 636, and a counter electrode 640. In addition, a planarization film 637 is formed between the second coloring film 636 and the counter electrode 640 to prevent alignment disorder of the liquid crystal. In addition, an alignment film 646 is formed over the counter electrode 640. FIG. 20 shows a structure on the counter substrate side. The counter electrode 640 is a common electrode between different pixels, but a slit 641 is formed. By disposing the slits 641 and the pixel electrodes 624 and the slits 625 on the pixel electrode 626 side so as to alternately engage with each other, an oblique electric field can be effectively generated to control the alignment of the liquid crystal. Thereby, the direction in which the liquid crystal is aligned can be varied depending on the location, and the viewing angle is widened.

The pixel electrode 624, the liquid crystal layer 650, and the counter electrode 640 overlap with each other, so that a first liquid crystal element is formed. In addition, the pixel electrode 626, the liquid crystal layer 650, and the counter electrode 640 overlap with each other, so that a second liquid crystal element is formed. In addition, the multi-domain structure in which the first liquid crystal element and the second liquid crystal element are provided in one pixel.

Note that although a VA (Vertical Alignment) liquid crystal display device is shown here as the liquid crystal display device, an element substrate formed using Embodiment Mode 1 is used as an FFS liquid crystal display device or an IPS liquid crystal display. It can be used for a device, a TN liquid crystal display device, and other liquid crystal display devices.

Through the above process, a liquid crystal display device can be manufactured. Since the liquid crystal display device in this embodiment uses a thin film transistor with low off-state current, excellent electrical characteristics, and high reliability, a liquid crystal display device with high contrast and high visibility can be manufactured.

(Embodiment 4)
In this embodiment, as one embodiment of the display device, a light-emitting display device including the thin film transistor described in Embodiment 1 is described below. Here, a structure of a pixel included in the light-emitting display device is described. FIG. 21A illustrates one mode of a top view of a pixel, and FIG. 21C illustrates one mode of a cross-sectional structure of a pixel corresponding to AB in FIG. 21A.

Here, the light-emitting device is described using a light-emitting element utilizing electroluminescence. A light-emitting element using electroluminescence is distinguished depending on whether the light-emitting material is an organic compound or an inorganic compound. Generally, the former is called an organic EL element and the latter is called an inorganic EL element. Here, Embodiment Mode 1 can be used as a manufacturing process of a thin film transistor.

In the organic EL element, by applying a voltage to the light emitting element, electrons and holes are respectively injected from the pair of electrodes into the layer containing the light emitting organic compound, and a current flows. Then, these carriers (electrons and holes) recombine, whereby the light-emitting organic compound forms an excited state, and emits light when the excited state returns to the ground state. Due to such a mechanism, such a light-emitting element is referred to as a current-excitation light-emitting element.

Inorganic EL elements are classified into a dispersion-type inorganic EL element and a thin-film inorganic EL element depending on the element structure. The dispersion-type inorganic EL element has a light-emitting layer in which particles of a light-emitting material are dispersed in a binder, and the light emission mechanism is donor-acceptor recombination light emission using a donor level and an acceptor level. The thin-film inorganic EL element has a structure in which a light emitting layer is sandwiched between dielectric layers and further sandwiched between electrodes, and the light emission mechanism is localized light emission utilizing inner-shell electron transition of metal ions. Note that description is made here using an organic EL element as a light-emitting element. In addition, although a thin film transistor for switching for controlling input of a signal to the pixel electrode and a thin film transistor for controlling driving of the light emitting element are illustrated using a channel etch type thin film transistor, a channel protection type thin film transistor is appropriately used. be able to.

21A to 21C, a first thin film transistor 74a is a switching thin film transistor for controlling input of a signal to a pixel electrode, and a second thin film transistor 74b is a current to a light emitting element 94. Alternatively, this corresponds to a driving thin film transistor for controlling supply of voltage.

The gate electrode of the first thin film transistor 74a is connected to the scanning line 51a, one of the source or drain is connected to the signal lines 71a to 71c, and the other of the source or drain is connected to the gate electrode 51b of the second thin film transistor 74b. One of the source and the drain of the second thin film transistor 74b is connected to the power supply lines 93a to 93c, and the other of the source and the drain is connected to the pixel electrode 79 of the display device. The capacitor element 96 includes the gate electrode, the gate insulating film, and the power supply line 93 a of the second thin film transistor 74 b, and the other of the source and the drain of the first thin film transistor 74 a is connected to the capacitor element 96.

Note that the capacitor 96 is a capacitor for holding the gate / source voltage or the gate / drain voltage (hereinafter referred to as gate voltage) of the second thin film transistor 74b when the first thin film transistor 74a is off. It is not necessary to provide it.

In this embodiment, the first thin film transistor 74a and the second thin film transistor 74b can be formed using Embodiment 1. The first thin film transistor 74a and the second thin film transistor 74b are formed using n-channel thin film transistors here, but the first thin film transistor 74a is formed using an n-channel thin film transistor and the second thin film transistor 74b is formed using a p-channel thin film transistor. It may be formed. Further, the first thin film transistor 74a and the second thin film transistor 74b may be formed using p-channel thin film transistors.

A protective insulating film 76 is formed over the first thin film transistor 74 a and the second thin film transistor 74 b, a planarizing film 78 is formed over the protective insulating film 76, and contact holes formed in the planarizing film 78 and the protective insulating film 65. The cathode 79 connected to the wiring 64c is formed. The planarizing film 78 is preferably formed using an organic resin such as acrylic, polyimide, or polyamide, or a siloxane polymer. In the contact hole, since the cathode 79 has unevenness, a partition wall 91 that covers the region and has an opening is provided. A light emitting layer 92 is formed so as to be in contact with the cathode 79 in the opening of the partition wall 91, an anode 93 is formed so as to cover the light emitting layer 92, and a protective insulating film 95 is formed so as to cover the anode 93 and the partition wall 91. .

Here, a light emitting element 94 having a top emission structure is shown as the light emitting element. Since the light-emitting element 94 having a top emission structure can emit light even on the first thin film transistor 74a and the second thin film transistor 74b, the light-emitting area can be increased. However, if the base film of the light emitting layer 92 has unevenness, the film thickness distribution is uneven in the unevenness, and the anode 93 and the cathode 79 are short-circuited, resulting in a display defect. For this reason, it is preferable to provide the planarization film 78.

A region where the light emitting layer 92 is sandwiched between the cathode 79 and the anode 93 corresponds to the light emitting element 94. In the case of the pixel shown in FIG. 21A, light emitted from the light emitting element 94 is emitted to the anode 93 side as indicated by a white arrow.

A known material can be used for the cathode 79 as long as it has a small work function and reflects light. For example, Ca, Al, CaF, MgAg, AlLi, etc. are desirable. The light emitting layer 92 may be composed of a single layer or may be composed of a plurality of layers stacked. In the case of a plurality of layers, the cathode 79 is laminated in the order of an electron injection layer, an electron transport layer, a light emitting layer, a hole transport layer, and a hole injection layer. Note that it is not necessary to provide all of these layers. The anode 93 is formed using a light-transmitting conductive material, for example, indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, or titanium oxide. A light-transmitting conductive conductive film such as indium tin oxide containing ITO, ITO, indium zinc oxide, or indium tin oxide to which silicon oxide is added may be used.

Here, a light emitting element having a top emission structure in which light emission is extracted from a surface opposite to the substrate is shown; however, a light emitting element having a bottom emission structure in which light emission is extracted from a surface on the substrate side, or a substrate side and a side opposite to the substrate. A light-emitting element having a dual emission structure in which light is extracted from a surface can be used as appropriate.

Although an organic EL element is described here as a light-emitting element, an inorganic EL element can also be provided as a light-emitting element.

Note that in this embodiment mode, an example in which a thin film transistor (driving thin film transistor) that controls driving of a light emitting element and the light emitting element are electrically connected is shown; however, current control is performed between the driving thin film transistor and the light emitting element. The thin film transistor may be connected.

Through the above process, a light-emitting display device can be manufactured. Since the light-emitting device of this embodiment uses a thin film transistor with low off-state current, excellent electrical characteristics, and high reliability, a light-emitting display device with high contrast and high visibility can be manufactured.

(Embodiment 5)
Next, a structure of a display panel which is one embodiment of the display device of the present invention is described below.

FIG. 22 illustrates a mode of a display panel in which only the signal line driver circuit 6013 is separately formed and connected to the pixel portion 6012 formed over the substrate 6011. The pixel portion 6012 and the scan line driver circuit 6014 are formed using a thin film transistor including a microcrystalline semiconductor film. By forming the signal line driver circuit with a transistor that can obtain higher mobility than a thin film transistor using a microcrystalline semiconductor film, the operation of the signal line driver circuit that requires a higher driving frequency than the scanning line driver circuit is stabilized. be able to. Note that the signal line driver circuit 6013 may be a transistor using a single crystal semiconductor, a thin film transistor using a polycrystalline semiconductor, or a transistor using SOI. The pixel portion 6012, the signal line driver circuit 6013, and the scan line driver circuit 6014 are supplied with a potential of a power source, various signals, and the like through the FPC 6015.

Note that both the signal line driver circuit and the scan line driver circuit may be formed over the same substrate as the pixel portion.

In the case where a driver circuit is separately formed, the substrate on which the driver circuit is formed is not necessarily bonded to the substrate on which the pixel portion is formed, and may be bonded to, for example, an FPC. FIG. 22B illustrates a mode of a display device panel in which only the signal line driver circuit 6023 is separately formed and connected to the pixel portion 6022 and the scan line driver circuit 6024 which are formed over the substrate 6021. The pixel portion 6022 and the scan line driver circuit 6024 are formed using a thin film transistor including a microcrystalline semiconductor film. The signal line driver circuit 6023 is connected to the pixel portion 6022 through the FPC 6025. The pixel portion 6022, the signal line driver circuit 6023, and the scan line driver circuit 6024 are supplied with power supply potential, various signals, and the like through the FPC 6025.

In addition, only part of the signal line driver circuit or part of the scan line driver circuit is formed over the same substrate as the pixel portion by using a thin film transistor using a microcrystalline semiconductor film, and the rest is formed separately. You may make it connect electrically. In FIG. 22C, an analog switch 6033a included in the signal line driver circuit is formed over the same substrate 6031 as the pixel portion 6032 and the scan line driver circuit 6034, and a shift register 6033b included in the signal line driver circuit is provided over a different substrate. The form of the display device panel formed and bonded is shown. The pixel portion 6032 and the scan line driver circuit 6034 are formed using a thin film transistor including a microcrystalline semiconductor film. A shift register 6033 b included in the signal line driver circuit is connected to the pixel portion 6032 through the FPC 6035. A potential of a power source, various signals, and the like are supplied to the pixel portion 6032, the signal line driver circuit, and the scan line driver circuit 6034 through the FPC 6035, respectively.

As shown in FIG. 22, in the display device in this embodiment, part or all of the driver circuit can be formed over the same substrate as the pixel portion using a thin film transistor including a microcrystalline semiconductor film.

Note that a method for connecting a separately formed substrate is not particularly limited, and a known COG method, wire bonding method, TAB method, or the like can be used. The connection position is not limited to the position illustrated in FIG. 22 as long as electrical connection is possible. In addition, a controller, a CPU, a memory, and the like may be separately formed and connected.

Note that the signal line driver circuit used in the present invention includes a shift register and an analog switch. Alternatively, in addition to the shift register and the analog switch, other circuits such as a buffer, a level shifter, and a source follower may be included. The shift register and the analog switch are not necessarily provided. For example, another circuit that can select a signal line such as a decoder circuit may be used instead of the shift register, or a latch or the like may be used instead of the analog switch. May be.

(Embodiment 6)
The display device obtained by the present invention can be used for an active matrix display device panel. That is, the present invention can be implemented in all electronic devices in which they are incorporated in the display portion.

Such electronic devices include cameras such as video cameras and digital cameras, head mounted displays (goggles type displays), car navigation, projectors, car stereos, personal computers, personal digital assistants (mobile computers, mobile phones, electronic books, etc.) ) And the like. An example of them is shown in FIG.

FIG. 23A illustrates a television device. As shown in FIG. 23A, the display device can be incorporated into a housing to complete the television device. A main screen 2003 is formed by the display panel, and a speaker portion 2009, operation switches, and the like are provided as other accessory equipment. In this manner, a television device can be completed.

As shown in FIG. 23A, a display panel 2002 using a display element is incorporated in a housing 2001, and a general television broadcast is received by a receiver 2005 and wired or wirelessly via a modem 2004. By connecting to a communication network, information communication in one direction (from the sender to the receiver) or in both directions (between the sender and the receiver or between the receivers) can be performed. The television device can be operated by a switch incorporated in the housing or a separate remote controller 2006, and this remote controller is also provided with a display unit 2007 for displaying information to be output. Also good.

In addition, the television device may have a configuration in which a sub screen 2008 is formed using the second display panel in addition to the main screen 2003 to display a channel, a volume, and the like. In this structure, the main screen 2003 may be formed using a liquid crystal display panel with an excellent viewing angle, and the sub screen may be formed using a light-emitting display panel that can display with low power consumption. In order to give priority to lower power consumption, the main screen 2003 may be formed using a light-emitting display panel, the sub screen may be formed using a light-emitting display panel, and the sub screen may be blinkable.

FIG. 24 is a block diagram illustrating a main configuration of the television device. In the display panel 900, a pixel portion 921 is formed. The signal line driver circuit 922 and the scan line driver circuit 923 may be mounted on the display panel 900 by a COG method.

As other external circuit configurations, on the input side of the video signal, among the signals received by the tuner 924, the video signal amplification circuit 925 that amplifies the video signal, and the signal output therefrom is each of red, green, and blue And a control circuit 927 for converting the video signal into an input specification of the driver IC. The control circuit 927 outputs a signal to each of the scanning line side and the signal line side. In the case of digital driving, a signal dividing circuit 928 may be provided on the signal line side so that an input digital signal is divided into m pieces and supplied.

Of the signals received by the tuner 924, the audio signal is sent to the audio signal amplification circuit 929, and the output is supplied to the speaker 933 through the audio signal processing circuit 930. The control circuit 931 receives control information on the receiving station (reception frequency) and volume from the input unit 932 and sends a signal to the tuner 924 and the audio signal processing circuit 930.

Of course, the present invention is not limited to a television device, but can be applied to various applications such as personal computer monitors, information display boards at railway stations and airports, and advertisement display boards on streets. can do.

By using the display device described in the above embodiment in the main screen 2003 and the sub screen 2008, mass productivity of the television device can be improved.

FIG. 23B illustrates an example of a mobile phone 2301. The cellular phone 2301 includes a display portion 2302, an operation portion 2303, and the like. In the display portion 2302, by applying the display device described in the above embodiment mode, mass productivity of the mobile phone can be improved.

A portable computer shown in FIG. 23C includes a main body 2401, a display portion 2402, and the like. By applying the display device described in the above embodiment to the display portion 2402, the mass productivity of the computer can be improved.

FIG. 23D illustrates a table lamp, which includes a lighting unit 2501, an umbrella 2502, a variable arm 2503, a column 2504, a stand 2505, and a power source 2506. It is manufactured by using the light emitting device of the present invention for the lighting portion 2501. The lighting fixture includes a ceiling-fixed lighting fixture or a wall-mounted lighting fixture. By applying the display device described in any of the above embodiments, mass productivity can be increased and an inexpensive desk lamp can be provided.

FIG. 11 is a cross-sectional view illustrating a method for manufacturing a display device of the present invention. FIG. 11 is a cross-sectional view illustrating a method for manufacturing a display device of the present invention. It is a cross-sectional view illustrating a method for manufacturing a conventional display device. It is an example of the time chart explaining the process of forming a microcrystal silicon film. FIG. 11 is a cross-sectional view illustrating a method for manufacturing a display device of the present invention. It is an example of the time chart explaining the process of forming a microcrystal silicon film. It is a figure which shows the structure of the plasma CVD apparatus applicable to this invention. It is a figure which shows the structure of the plasma CVD apparatus applicable to this invention. FIG. 11 is a cross-sectional view illustrating a method for manufacturing a display device of the present invention. FIG. 11 is a cross-sectional view illustrating a method for manufacturing a display device of the present invention. FIG. 11 is a top view illustrating a method for manufacturing a display device of the present invention. FIG. 11 is a cross-sectional view illustrating a method for manufacturing a display device of the present invention. It is a figure explaining the multi-tone mask applicable to this invention. FIG. 11 is a cross-sectional view illustrating a method for manufacturing a display device of the present invention. FIG. 11 is a cross-sectional view illustrating a method for manufacturing a display device of the present invention. FIG. 11 is a top view illustrating a method for manufacturing a display device of the present invention. FIG. 11 is a cross-sectional view illustrating a method for manufacturing a display device of the present invention. FIG. 11 is a cross-sectional view illustrating a display device of the present invention. FIG. 11 is a top view illustrating a display device of the present invention. FIG. 11 is a top view illustrating a display device of the present invention. 5A and 5B are a cross-sectional view and a top view illustrating a display device of the present invention. FIG. 11 is a perspective view illustrating a display panel of the present invention. FIG. 11 is a perspective view illustrating an electronic device using the display device of the invention. It is a diagram illustrating an electronic device using a display device of the present invention.

Claims (6)

On the insulating film, fluorinated silane and silane are used to form crystal nuclei by glow discharge plasma,
Crystal growth is performed by glow discharge plasma in a deposition gas atmosphere using the crystal nucleus as a seed to form a microcrystalline semiconductor film,
A method for manufacturing a semiconductor film, wherein the microcrystalline semiconductor film is irradiated with a laser beam. On the insulating film, fluorinated silane and silane are used to form crystal nuclei by glow discharge plasma,
Crystal growth is performed by glow discharge plasma in a deposition gas atmosphere using the crystal nucleus as a seed to form a microcrystalline semiconductor film,
Irradiating the microcrystalline semiconductor film with a laser beam,
A method for manufacturing a semiconductor film, wherein an amorphous semiconductor portion on a surface of a microcrystalline semiconductor is selectively etched with a gas containing fluorine or a fluoride such as hydrogen, silicon, or germanium. Forming an amorphous semiconductor film on the insulating film;
Irradiating the semiconductor film with a laser beam,
A method for manufacturing a semiconductor film, wherein an amorphous semiconductor portion on a surface of a microcrystalline semiconductor is selectively etched with a gas containing fluorine or a fluoride such as hydrogen, silicon, or germanium. A microcrystalline semiconductor film is formed over the insulating film,
Irradiating the microcrystalline semiconductor film with a laser beam,
A method for manufacturing a semiconductor film, wherein an amorphous semiconductor portion on a surface of a microcrystalline semiconductor is selectively etched with a gas containing fluorine or a fluoride such as hydrogen, silicon, or germanium. In any one of Claims 1 thru | or 4,
A gate electrode is formed on the base insulating film,
Forming a gate insulating film on the base insulating film and the gate electrode;
Forming the semiconductor film on the gate insulating film;
Forming a buffer layer on the semiconductor film;
Forming a source region and a drain region formed of a semiconductor film to which an impurity imparting one conductivity type is added on the buffer layer;
A method for manufacturing a thin film transistor, wherein a source electrode and a drain electrode are formed over the source region and the drain region. In claim 5,
A method for manufacturing a display device, comprising forming a pixel electrode in contact with the source electrode or the drain electrode of a thin film transistor.

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