JP2009054969A - Wiring board and manufacturing method thereof - Google Patents

Wiring board and manufacturing method thereof Download PDF

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JP2009054969A
JP2009054969A JP2007222917A JP2007222917A JP2009054969A JP 2009054969 A JP2009054969 A JP 2009054969A JP 2007222917 A JP2007222917 A JP 2007222917A JP 2007222917 A JP2007222917 A JP 2007222917A JP 2009054969 A JP2009054969 A JP 2009054969A
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wiring board
terminal
terminal pad
terminal pads
wiring
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JP5043563B2 (en
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Yasushi Yokota
泰志 横田
Akio Horiuchi
章夫 堀内
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Shinko Electric Industries Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16235Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a via metallisation of the item
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    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16238Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bonding area protruding from the surface of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
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    • H01ELECTRIC ELEMENTS
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119Arrangement of the bump connectors prior to mounting
    • H01L2224/81193Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
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    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818Bonding techniques
    • H01L2224/81801Soldering or alloying
    • H01L2224/81815Reflow soldering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92Specific sequence of method steps
    • H01L2224/921Connecting a surface with connectors of different types
    • H01L2224/9212Sequential connecting processes
    • H01L2224/92122Sequential connecting processes the first connecting process involving a bump connector
    • H01L2224/92125Sequential connecting processes the first connecting process involving a bump connector the second connecting process involving a layer connector
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1517Multilayer substrate
    • H01L2924/15172Fan-out arrangement of the internal vias
    • H01L2924/15174Fan-out arrangement of the internal vias in different layers of the multilayer substrate
    • HELECTRICITY
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    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15312Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a pin array, e.g. PGA

Abstract

<P>PROBLEM TO BE SOLVED: To provide a wiring board wherein bonding force to be required for soldering an electrode of an electronic component such as a semiconductor device to a plurality of terminal pads arrayed on the surface of the wiring board is improved, and to provide a method of manufacturing the wiring board. <P>SOLUTION: In the wiring board 10 having a plurality of soldering terminal pads 20 arranged in an array form on the surface, the terminal pads are respectively formed so that respective plane shapes are regular polygons and the inner centers I of the regular polygons are arrayed vertically and horizontally in a prescribed pitch L. Further, the three-dimensional shape of each pad is formed in a projected shape wherein the center part of the surface is projected. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、配線基板及びその製造方法に関し、特に、表面に半田接合用の複数の端子パッドを有する配線基板及びその製造方法に関する。   The present invention relates to a wiring board and a manufacturing method thereof, and more particularly to a wiring board having a plurality of terminal pads for solder bonding on the surface and a manufacturing method thereof.

従来から、表面に円形の半田接合用の端子パッドを有する配線基板が知られている。図14は、従来の配線基板110の平面構成図である。図14において、配線基板110はその表面に、格子状に配置された複数の端子パッド220を有する。かかる端子パッド220は、その上に半田ペーストが形成されたり、半田ボールが搭載されたりして、半導体素子の電極端子との接続がなされたり、外部接続端子用に利用される。例えば、配線基板110の両面に端子パッド220が形成され、一方の面を半導体素子が搭載される半導体搭載面、他方の面を外部接続端子用の面とする半導体装置実装用の配線基板として利用される。かかる用途を有する従来の配線基板110において、表面上の各々の端子パッド220は、円形に形成され、その中心Cの座標と、隣接する端子パッド220同士の中心間の距離であるピッチLにより、その配列位置と間隔が定められている。最近の半導体装置小型化の傾向から、ピッチLは狭くなる傾向にあるが、かかる狭ピッチ化傾向の下では、隣接する端子パッド220同士が接触しないように、また設計・加工が容易であることから、端子パッド220は円形に形成される場合が多い。   Conventionally, a wiring substrate having a circular solder joint terminal pad on its surface is known. FIG. 14 is a plan configuration diagram of a conventional wiring board 110. In FIG. 14, the wiring board 110 has a plurality of terminal pads 220 arranged in a lattice pattern on the surface thereof. The terminal pad 220 is used for an external connection terminal or a solder paste formed thereon or a solder ball is mounted on the terminal pad 220 for connection with an electrode terminal of a semiconductor element. For example, terminal pads 220 are formed on both surfaces of the wiring substrate 110, and the semiconductor device mounting surface is used as a wiring substrate for mounting a semiconductor device in which one surface is a semiconductor mounting surface on which semiconductor elements are mounted and the other surface is a surface for external connection terminals. Is done. In the conventional wiring board 110 having such an application, each terminal pad 220 on the surface is formed in a circular shape, and according to the coordinates of the center C and the pitch L which is the distance between the centers of the adjacent terminal pads 220, The arrangement position and interval are determined. The pitch L tends to be narrow due to the recent trend toward miniaturization of semiconductor devices, but the design and processing should be easy so that adjacent terminal pads 220 do not contact each other under such a narrow pitch tendency. Therefore, the terminal pad 220 is often formed in a circular shape.

かかる円形の端子パッドを用いたプリント配線基板において、プリント配線基板に応力が加わった場合でも、半導体素子のコーナー部とプリント配線基板との接合部分の破断を防止すべく、円形のパッドの全体の配列形状を、コーナー部を設けないように円形の配列形状とし、応力を分散するように配置構成した技術も知られている(例えば、特許文献1参照)。
特開2005−64274号公報
In a printed wiring board using such circular terminal pads, even when stress is applied to the printed wiring board, the entire circular pad is prevented in order to prevent breakage of the joint portion between the corner portion of the semiconductor element and the printed wiring board. A technique is also known in which the arrangement shape is a circular arrangement shape so as not to provide a corner portion, and the arrangement shape is configured to disperse stress (see, for example, Patent Document 1).
JP 2005-64274 A

しかしながら、上述の図14に示した従来技術の構成では、円形の端子パッドが用いられるため、半田接合面積が固定してしまい、半田による接合力が弱くなり、応力がかかると、接合部分が破断してしまうという問題があった。つまり、与えられたピッチ間で、隣接する端子パッド120同士の間隔は十分確保でき、短絡等の問題は発生し難いが、接合力が弱くなってしまうという問題があった。   However, in the configuration of the prior art shown in FIG. 14 described above, since the circular terminal pad is used, the solder joint area is fixed, the joint force by the solder is weakened, and when stress is applied, the joint portion is broken. There was a problem of doing. That is, there is a problem that a sufficient interval between the adjacent terminal pads 120 can be secured between given pitches, and a problem such as a short circuit hardly occurs, but a bonding force is weakened.

また、上述の特許文献1に記載の構成においても、端子パッドの配列に種々の制約が生じた場合に、特許文献1に記載した配列を実現することが困難であり、総ての用途に対応できる構成ではないという問題があった。   Further, even in the configuration described in Patent Document 1 described above, it is difficult to realize the arrangement described in Patent Document 1 when various restrictions occur in the arrangement of terminal pads. There was a problem that the configuration was not possible.

そこで、本発明は、表面に配列された端子パッドの半田接合力を向上させる配線基板及びその製造方法を提供することを目的とする。   Therefore, an object of the present invention is to provide a wiring board that improves the solder bonding strength of terminal pads arranged on the surface, and a method for manufacturing the wiring board.

上記目的を達成するため、第1の発明に係る配線基板は、表面に半田接合用の複数の端子パッドを有する配線基板であって、
前記複数の端子パッドは、平面形状が正多角形に形成され、
該正多角形の内心が、所定のピッチで配列されたことを特徴とする。
To achieve the above object, a wiring board according to a first aspect of the present invention is a wiring board having a plurality of terminal pads for solder bonding on the surface,
The plurality of terminal pads have a planar shape formed in a regular polygon,
The inner centers of the regular polygons are arranged at a predetermined pitch.

これにより、端子パッドの面積を、円形の場合よりも大きくすることができ、ピッチを円形パッドの場合と同一としつつ半田接合力を向上させることができる。   Thereby, the area of a terminal pad can be made larger than the case of a circle, and the solder joint force can be improved while keeping the pitch the same as that of a circle pad.

第2の発明は、第1の発明に係る配線基板において、前記複数の端子パッドは、前記正多角形が同じ向きとなるように形成されたことを特徴とする。   According to a second invention, in the wiring board according to the first invention, the plurality of terminal pads are formed so that the regular polygons are in the same direction.

これにより、隣接する端子パッドの外形の距離を均一化することができるので、各端子パッドに加わる応力も均一化することができ、半田接合力を更に強化することができる。   Thereby, since the distance of the external shape of an adjacent terminal pad can be made uniform, the stress applied to each terminal pad can also be made uniform, and the solder joint force can be further strengthened.

第3の発明は、第1又は第2の発明に係る配線基板において、
前記複数の端子パッドは、格子をなして配列され、
前記正多角形は、前記格子と平行な辺で形成された正方形であることを特徴とする。
3rd invention is the wiring board which concerns on 1st or 2nd invention,
The plurality of terminal pads are arranged in a lattice,
The regular polygon is a square formed by sides parallel to the lattice.

これにより、多く利用される格子状の配列パターンを有する配線基板について、隣接する端子パッド同士の外形の距離は円と全く同じとしながらも、接合面積は円よりも大きくすることができ、狭ピッチの配線パターンに対応しつつ接合強度を向上させることができる。   As a result, for a wiring board having a grid-like array pattern that is often used, the junction area can be made larger than a circle while the outer distance between adjacent terminal pads is exactly the same as a circle, and the narrow pitch The bonding strength can be improved while corresponding to this wiring pattern.

第4の発明は、第1〜3のいずれか一つの発明に係る配線基板において、
前記端子パッドの立体形状は、表面の中央部が突出した凸形状であることを特徴とする。
A fourth invention is the wiring board according to any one of the first to third inventions,
The three-dimensional shape of the terminal pad is a convex shape in which a central portion of the surface protrudes.

これにより、端子パッドの表面積を更に大きくすることができ、接合強度を更に向上させることができる。   Thereby, the surface area of the terminal pad can be further increased, and the bonding strength can be further improved.

第5の発明は、第1〜4のいずれか一つの発明に係る配線基板において、
前記表面は、半導体素子が搭載される半導体搭載面であることを特徴とする。
A fifth invention is a wiring board according to any one of the first to fourth inventions,
The surface is a semiconductor mounting surface on which a semiconductor element is mounted.

これにより、半導体チップ実装用の配線基板について、半導体素子の電極端子との半田接合強度を向上させることができ、応力に強い半導体装置搭載用の配線基板とすることができる。   As a result, the solder bonding strength of the semiconductor chip mounting wiring board and the electrode terminal of the semiconductor element can be improved, and a wiring board for mounting a semiconductor device resistant to stress can be obtained.

第6の発明は、第1〜5のいずれか一つの発明に係る配線基板において、
前記表面は、外部接続端子面であって、
該外部接続端子面の反対面には、半導体素子が搭載される半導体搭載面が形成されていることを特徴とする。
A sixth invention is the wiring board according to any one of the first to fifth inventions,
The surface is an external connection terminal surface,
A semiconductor mounting surface on which a semiconductor element is mounted is formed on the surface opposite to the external connection terminal surface.

これにより、半導体チップ実装用の基板において、外部接続端子面の端子パッドの表面積を大きくして半田接合力を強化することができ、応力に強い半導体装置搭載用の配線基板とすることができる。   Thereby, in the substrate for mounting a semiconductor chip, the surface area of the terminal pad on the external connection terminal surface can be increased to enhance the solder bonding force, and a wiring substrate for mounting a semiconductor device resistant to stress can be obtained.

第7の発明に係る配線基板の製造方法は、平面形状が正多角形であり、立体形状が中央部の突出した凸形状である端子パッドを有する配線基板の製造方法であって、
金属からなる支持体に、正多角形の開口を有するレジストをパターンニングするレジストパターンニング工程と、
エッチングを行い、前記レジストが覆われていない部分の前記支持体に凹状の窪みを形成するエッチング工程と、
前記窪みに、電解めっきにより前記端子パッドを形成する端子パッド形成工程と、
前記レジストを除去するレジスト除去工程と、
前記端子パッドが形成された前記支持体の表面に、絶縁層を形成する絶縁層形成工程と、
前記絶縁層上に、前記端子パッドと接続された配線層を形成する配線層形成工程と、
前記配線層の金属が露出するように、前記配線層の上方にソルダレジストを形成するソルダレジスト形成工程と、
前記支持体を、エッチングにより除去する支持体除去工程と、を含むことを特徴とする。
A method for manufacturing a wiring board according to a seventh aspect of the present invention is a method for manufacturing a wiring board having a terminal pad whose planar shape is a regular polygon and whose three-dimensional shape is a convex shape protruding from the center part.
A resist patterning step of patterning a resist having a regular polygonal opening on a metal support;
An etching step of performing etching and forming a concave depression in the support in a portion where the resist is not covered;
A terminal pad forming step for forming the terminal pad in the recess by electrolytic plating;
A resist removing step for removing the resist;
An insulating layer forming step of forming an insulating layer on the surface of the support on which the terminal pads are formed;
A wiring layer forming step of forming a wiring layer connected to the terminal pad on the insulating layer;
A solder resist forming step of forming a solder resist above the wiring layer so that the metal of the wiring layer is exposed;
And a support removing step of removing the support by etching.

これにより、半田接合力の高い配線基板を製造することができる。   Thereby, a wiring board with high solder joint strength can be manufactured.

本発明によれば、配線基板の半田接合用の端子パッドの半田接合力を高めることができる。   ADVANTAGE OF THE INVENTION According to this invention, the solder joint force of the terminal pad for solder joining of a wiring board can be improved.

以下、図面を参照して、本発明を実施するための最良の形態の説明を行う。   The best mode for carrying out the present invention will be described below with reference to the drawings.

図1は、本発明を適用した実施例1に係る配線基板10の平面構成図である。図1において、配線基板10の表面に、複数の端子パッド20が、所定のピッチLで格子状に配列されている。端子パッド20の平面形状は正方形であって、その内心Iは、ピッチLを定める端子パッド20の中心点をなし、正方形の内接円120の中心Cと一致している。つまり、ピッチLは、隣接する端子パッド20同士の内心Iの間隔と同じである。なお、内接円120、内接円120の中心C及びピッチLは、従来の円形の端子パッド220と同様の配置及び形状を有する関係にあるので、その中心C及びピッチLについては、今までの説明と同様の参照符号を用いるものとする。   FIG. 1 is a plan configuration diagram of a wiring board 10 according to a first embodiment to which the present invention is applied. In FIG. 1, a plurality of terminal pads 20 are arranged in a grid pattern at a predetermined pitch L on the surface of the wiring board 10. The planar shape of the terminal pad 20 is a square, and its inner center I is the center point of the terminal pad 20 that defines the pitch L, and coincides with the center C of the square inscribed circle 120. That is, the pitch L is the same as the interval between the inner centers I of the adjacent terminal pads 20. Since the inscribed circle 120 and the center C and the pitch L of the inscribed circle 120 have the same arrangement and shape as those of the conventional circular terminal pad 220, the center C and the pitch L have been described so far. The same reference numerals as those used in the explanation are used.

実施例1に係る配線基板10においては、格子状に配列された端子パッド20の平面形状を、格子をなす列に平行な2辺で構成された正方形に形成している。これにより、ピッチLは、端子パッド20が円形で形成された場合と同じに保たれるとともに、内心Iを結ぶ線分は、隣接する正方形同士の最も近接する2辺に垂直に交わっており、その交点は、内接円120と正方形端子パッド20の接点と一致するので、隣接する端子パッド20同士の距離は、内心I同士の距離Lだけでなく、外形をなす輪郭線においても、内接円120同士の距離と一致している。   In the wiring board 10 according to the first embodiment, the planar shape of the terminal pads 20 arranged in a lattice shape is formed in a square formed by two sides parallel to the rows forming the lattice. Thereby, the pitch L is kept the same as when the terminal pad 20 is formed in a circle, and the line segment connecting the inner centers I intersects perpendicularly to the two closest sides of adjacent squares, Since the intersection point coincides with the contact point between the inscribed circle 120 and the square terminal pad 20, the distance between the adjacent terminal pads 20 is not only the distance L between the inner centers I but also the inscribed contour line. It corresponds to the distance between the circles 120.

図2は、図1の配線基板10の隣接する2つの端子パッド20を拡大した図である。図2において、隣接する2つの端子パッド20a、20bがピッチLで配列され、その仮想的な内接円120a、120bが示されている。このように、実施例1に係る配線基板10においては、端子パッド20a、20b同士のピッチLは内接円120a、120b同士のピッチLと一致し、更に、端子パッド20a、20b同士の最も近接した辺同士の距離dも、内接円120a、120b同士の距離dと一致している。そして、端子パッド20a、20bは各々内接円120a、120bに外接し、これを内包しているので、正方形の四隅付近の端部の領域分、内接円120a、120bよりも広い面積を有している。かかる面積の増加した領域分、端子パッド20a、20bを用いて半田接合を行う場合には、接合面積が増加するので、従来の円形端子パッド(内接円120a、120bと同じ形状)より、接合力が向上する。   FIG. 2 is an enlarged view of two adjacent terminal pads 20 of the wiring board 10 of FIG. In FIG. 2, two adjacent terminal pads 20a and 20b are arranged at a pitch L, and virtual inscribed circles 120a and 120b are shown. As described above, in the wiring board 10 according to the first embodiment, the pitch L between the terminal pads 20a and 20b is equal to the pitch L between the inscribed circles 120a and 120b, and the terminal pads 20a and 20b are closest to each other. The distance d between the sides is also the same as the distance d between the inscribed circles 120a and 120b. Since the terminal pads 20a and 20b circumscribe and enclose the inscribed circles 120a and 120b, respectively, the terminal pads 20a and 20b have a larger area than the inscribed circles 120a and 120b by the end regions near the four corners of the square. is doing. When solder bonding is performed by using the terminal pads 20a and 20b corresponding to the increased area, the bonding area increases, so that the conventional circular terminal pads (the same shape as the inscribed circles 120a and 120b) can be bonded. Power is improved.

このように、本実施例に係る半導体基板10によれば、従来の端子パッド120a、120bが構成する実質的な配線パターンの配置は同一のまま、端子パッド20a、20bの表面積を増加させて接合強度を高めることができる。   As described above, according to the semiconductor substrate 10 according to the present embodiment, bonding is performed by increasing the surface area of the terminal pads 20a and 20b while maintaining the same arrangement of the substantial wiring patterns formed by the conventional terminal pads 120a and 120b. Strength can be increased.

図3は、図2で示した横方向に隣接する端子パッド20a、20bに、縦方向に隣接する端子パッド20c、20dを加えた配線基板10の拡大平面図である。図3において、縦方向に隣接する端子パッド20a、20c同士及び端子パッド20b、20d同士についても、ピッチLは内接円120a、120c同士及び内接円120b、120d同士と同一に保たれ、近接する辺同士の距離dも内接円120a、120c同士及び内接円120b、120d同士の距離dと同一に保たれている。   FIG. 3 is an enlarged plan view of the wiring board 10 in which the terminal pads 20c and 20d adjacent in the vertical direction are added to the terminal pads 20a and 20b adjacent in the horizontal direction shown in FIG. In FIG. 3, the pitch L of the terminal pads 20a and 20c adjacent to each other in the vertical direction and the terminal pads 20b and 20d are kept the same as the inscribed circles 120a and 120c and the inscribed circles 120b and 120d. The distance d between the sides is also kept the same as the distance d between the inscribed circles 120a and 120c and between the inscribed circles 120b and 120d.

このように、格子状に配列された端子パッド20a、20b、20c、20dについては、格子をなす配列線と同一方向の2辺で正方形の平面形状を構成すれば、配置パターンを全く変更することなく、各々の端子パッド20a、20b、20c、20dの接合強度を高めることができる。   As described above, regarding the terminal pads 20a, 20b, 20c, and 20d arranged in a grid pattern, if the square planar shape is formed with two sides in the same direction as the array lines forming the grid, the arrangement pattern is completely changed. In addition, the bonding strength of each of the terminal pads 20a, 20b, 20c, and 20d can be increased.

図1に戻ると、図1においては、総ての端子パッド20について、図2及び図3で説明した格子状の配置と端子パッド20の形状が適用されている。これにより、総ての端子パッド20について、同一のピッチLを保ちつつ各々の半田接合強度を向上させることができる。   Returning to FIG. 1, the lattice-like arrangement and the shape of the terminal pad 20 described in FIGS. 2 and 3 are applied to all the terminal pads 20 in FIG. 1. As a result, the solder joint strength of all the terminal pads 20 can be improved while maintaining the same pitch L.

しかしながら、本実施例に係る配線基板10は、必ずしも総ての端子パッド20について格子列に平行又は垂直な辺で形成された正方形形状で構成される必要はなく、配線基板10の表面の一部の端子パッド20に適用されてもよい。配線基板10の端子パッド20のパターンは、用途に応じて種々の態様が適用され得、端子パッド20の一部に本発明を適用した場合であっても、接合強度を向上させる効果は当該適用部分で得ることができるからである。   However, the wiring board 10 according to the present embodiment does not necessarily need to be configured in a square shape formed with sides parallel to or perpendicular to the lattice rows for all the terminal pads 20, and a part of the surface of the wiring board 10. The terminal pad 20 may be applied. Various modes can be applied to the pattern of the terminal pad 20 of the wiring board 10 according to the application. Even when the present invention is applied to a part of the terminal pad 20, the effect of improving the bonding strength is the application. Because it can be obtained in parts.

次に、図4を用いて、実施例1に係る配線基板10の変形例について説明する。図4は、実施例1の変形例に係る配線基板10aの平面構成図である。図4において、配線基板10aの表面に配列された端子パッド20は、その平面形状は、格子列に平行又は垂直な2辺で形成された正方形であって、図1に係る配線基板10と同様であるが、その配列が、対角線上に隣接する端子パッド20f、20gの組を含む点で、図1に係る配線基板10と異なっている。   Next, a modification of the wiring board 10 according to the first embodiment will be described with reference to FIG. FIG. 4 is a plan configuration diagram of a wiring board 10a according to a modification of the first embodiment. In FIG. 4, the terminal pads 20 arranged on the surface of the wiring board 10a have a planar shape that is a square formed by two sides parallel or perpendicular to the lattice rows, and is the same as the wiring board 10 according to FIG. However, the arrangement differs from the wiring board 10 according to FIG. 1 in that the arrangement includes a pair of terminal pads 20f and 20g adjacent on the diagonal line.

図4において、格子列上で隣接する端子パッド20e、20f同士では、ピッチL1、近接する辺同士の距離d1であり、図1乃至図3で説明したのと同様に、内接円120e、120fとの関係と同様である。しかしながら、対角線上で隣接する端子パッド20f、20g同士については、ピッチL2は内接円120f、120g同士の関係と一致するが、外形の距離については、端子パッド20f、20g同士が距離d2であるのに対し、内接円120f、120g同士はそれよりもやや長い距離d3となっており、両者は完全には一致していない。   In FIG. 4, the terminal pads 20e and 20f adjacent on the grid row have the pitch L1 and the distance d1 between the adjacent sides, and the inscribed circles 120e and 120f are the same as described with reference to FIGS. It is the same as the relationship. However, for the terminal pads 20f and 20g adjacent on the diagonal line, the pitch L2 coincides with the relationship between the inscribed circles 120f and 120g, but the distance between the external pads 120f and 20g is the distance d2. On the other hand, the inscribed circles 120f and 120g have a distance d3 that is slightly longer than the inscribed circles 120f and 120g, and the two do not completely match.

このように、端子パッド20f、20gのピッチL2に余裕がある場合には、内接円120f、120g同士の距離d3よりも、端子パッド20f、20g間の距離d2はやや短くなってもよい。端子パッド20f、20g間の距離d2と、内接円120f、120g間の距離d3の差は、内接円120f、120gの半径をrとすると、d3−d2=(√2−1)r×2≒0.41r×2であり、この距離差が、配線パターン構成上に影響を与えるものでなければ、このような配置構成としても何ら問題は無い。このように、端子パッド20f、20g同士の距離d2を、配線パターンとして影響を与えない範囲で若干小さくしてもよく、端子パッド20f、20gの面積は内接円120f、120gより大きいので、やはり半田接合強度を向上させることができる。   Thus, when there is a margin in the pitch L2 of the terminal pads 20f and 20g, the distance d2 between the terminal pads 20f and 20g may be slightly shorter than the distance d3 between the inscribed circles 120f and 120g. The difference between the distance d2 between the terminal pads 20f and 20g and the distance d3 between the inscribed circles 120f and 120g is expressed as d3−d2 = (√2−1) r × where r is the radius of the inscribed circles 120f and 120g. As long as 2≈0.41r × 2 and this distance difference does not affect the wiring pattern configuration, there is no problem even with such an arrangement configuration. Thus, the distance d2 between the terminal pads 20f and 20g may be slightly reduced within a range that does not affect the wiring pattern, and the area of the terminal pads 20f and 20g is larger than the inscribed circles 120f and 120g. Solder joint strength can be improved.

以上説明したように、実施例1に係る配線基板10、10aの端子パッド20、20a〜20gの配置構成は、用途により種々の態様を適用することが可能である。所定の端子パッド20、20a〜20gのピッチL、L1、L2に従いつつ、各々の端子パッド20、20a〜20gの形状を、内接円120、120a〜120gを含む正方形に形成することにより、内接円120、120a〜120gよりも接合面積を大きくし、半田接合力を向上させることができる。特に、格子状の配置部分が多い配線パターンでは、端子パッド20、20a〜20gの近接した外形辺間の距離d、d1、d2への影響も極めて小さくすることができる。   As described above, various modes can be applied to the arrangement configuration of the terminal pads 20 and 20a to 20g of the wiring boards 10 and 10a according to the first embodiment. By forming the shape of each terminal pad 20, 20a-20g into a square including the inscribed circles 120, 120a-120g while following the pitches L, L1, L2 of the predetermined terminal pads 20, 20a-20g, The bonding area can be made larger than the contact circles 120 and 120a to 120g, and the solder bonding force can be improved. In particular, in a wiring pattern having many grid-like arrangement portions, the influence on the distances d, d1, and d2 between the adjacent outer edges of the terminal pads 20, 20a to 20g can be extremely reduced.

図5は、本発明を適用した実施例2に係る配線基板10bの平面構成を示した図である。図5において、配線基板10bは、複数の端子パッド21が総て格子状に配列されている点で実施例1の図1と同様であるが、各々の端子パッド21の形状が、正五角形で形成されている点で、図1に係る配線基板10とは異なっている。このように、端子パッド21の形状は、正五角形で構成してもよい。端子パッド21は、正方形と同様に正多角形であるので、その内心Iは、ピッチLを定める点と一致し、これは内接円121の中心Cとやはり一致する。そして、正五角形の端子パッド21は、内接円121を内包しているので、その面積は内接円121よりも大きく、各々の半田接合力をやはり高めることができる。   FIG. 5 is a diagram showing a planar configuration of a wiring board 10b according to the second embodiment to which the present invention is applied. In FIG. 5, the wiring board 10b is the same as FIG. 1 of the first embodiment in that a plurality of terminal pads 21 are all arranged in a grid pattern, but the shape of each terminal pad 21 is a regular pentagon. The wiring board 10 according to FIG. 1 is different in that it is formed. Thus, the shape of the terminal pad 21 may be a regular pentagon. Since the terminal pad 21 is a regular polygon like a square, its inner center I coincides with a point that defines the pitch L, which also coincides with the center C of the inscribed circle 121. Since the regular pentagonal terminal pad 21 contains the inscribed circle 121, the area thereof is larger than that of the inscribed circle 121, and each solder joint force can be increased.

端子パッド21を正五角形に構成すると、正方形の場合よりも、やや円形に形状が近付く。つまり、より円形に近い状況下で配線パターンを設計し、かつ、各々の半田接合強度を円形の端子パッド220より強化したい場合には、実施例2に係る配線基板10bのように、正多角形の角数を正方形よりも増やし、より円形に近い形状とするようにしてもよい。実施例2の配線基板10bは、端子パッド21を例えば正六角形、正七角形又は正八角形等としても適用可能である。多角形の角数が増え、円形に近い多角形となる程、内接円121からはみ出す部分の面積は小さくなるので、接合力は若干弱くなるが、配線パターンの配置設計は円形と近似して考えることができるので、より容易になる。また、正五角形は同一の向きで配列されているが、パターン形成の容易さと、端子パッド21間の距離の均一の観点から、同じ向きに配列してもよいし、応力や配線等の事情を考慮して、その向きを適宜変更するようにしてもよい。   When the terminal pad 21 is configured to be a regular pentagon, the shape is slightly closer to a circle than in the case of a square. That is, when the wiring pattern is designed under a more circular condition and each solder joint strength is to be strengthened than the circular terminal pad 220, a regular polygon is formed as in the wiring board 10b according to the second embodiment. The number of corners may be larger than that of a square, and the shape may be closer to a circle. The wiring board 10b according to the second embodiment can be applied to the terminal pads 21 having, for example, a regular hexagon, a regular heptagon, or a regular octagon. As the number of corners of the polygon increases and the polygon becomes closer to a circle, the area of the portion protruding from the inscribed circle 121 becomes smaller, so the bonding force is slightly weakened, but the wiring pattern layout design approximates to a circle. It's easier because you can think about it. In addition, the regular pentagons are arranged in the same direction. However, from the viewpoint of easy pattern formation and uniform distance between the terminal pads 21, they may be arranged in the same direction, and there are circumstances such as stress and wiring. The direction may be changed as appropriate in consideration.

図6は、実施例2に係る配線基板10bの変形例である配線基板10cの平面構成を示した図である。図6において、ピッチL1、L2を定める端子パッド21の中心点の配置は、実施例1の図4に係る配線基板10aと同様であり、格子状の配列に加えて、対角線上の配列も含んだ平面配列構成となっている。   FIG. 6 is a diagram illustrating a planar configuration of a wiring board 10c which is a modification of the wiring board 10b according to the second embodiment. 6, the arrangement of the center points of the terminal pads 21 that define the pitches L1 and L2 is the same as that of the wiring board 10a according to FIG. 4 of the first embodiment, and includes a diagonal arrangement in addition to the grid arrangement. It has a planar arrangement configuration.

図6において、端子パッド21a、21b間の近接辺間の距離d4を定める線分は、端子パッド21aと内接円121aとの接点及び端子パッド21bと内接円121bの接点を通っておらず、内接円121a、121b間の外形間の距離とは一致していない。同様に、端子パッド21b、21c間の近接辺間の距離d5を定める線分も、端子パッド21bと内接円121bとの接点及び端子パッド21cと内接円121cの接点を通っておらず、内接円121b、121c間の外形間の距離とはやはり一致していない。   In FIG. 6, the line segment defining the distance d4 between the adjacent sides between the terminal pads 21a and 21b does not pass through the contact between the terminal pad 21a and the inscribed circle 121a and the contact between the terminal pad 21b and the inscribed circle 121b. The distance between the outer shapes of the inscribed circles 121a and 121b does not match. Similarly, the line segment defining the distance d5 between the adjacent sides between the terminal pads 21b and 21c does not pass through the contact between the terminal pad 21b and the inscribed circle 121b and the contact between the terminal pad 21c and the inscribed circle 121c. The distance between the outer shapes between the inscribed circles 121b and 121c does not match.

しかしながら、それらの差は、図4で示した端子パッド20f、20g間の近接外形の差d3−d2=(√2−1)r×2より遥かに小さく、平均化されている。これは、端子パッド21a、21b、21cが正方形よりも円形に近似した多角形となったため、方向による端子パッド21a、21b、21cの外形をなす辺と内接円121a、121b、121cとの距離差が減少したためである。よって、配線パターンが種々の方向の配列を含み、隣接する端子パッド21a、21b、21c同士の近接する外形辺間の距離をいくつか考える必要がある場合には、端子パッド21a、21b、21cを正五角形以上の多角形として構成してもよい。これにより、端子パッド21a、21b、21c同士の近接する外形辺間の距離と、内接円121a、121b、121c同士の距離の差を、小さな値で平均化することができる。また、正多角形は、内接円121a、121b、121cよりも面積が大きいので、その各々の半田接合力をやはり高めることができる。   However, the difference between them is much smaller than the difference d3−d2 = (√2−1) r × 2 between the adjacent outer shapes between the terminal pads 20f and 20g shown in FIG. This is because the terminal pads 21a, 21b, and 21c are polygons that approximate a circle rather than a square, and the distance between the sides that form the outer shape of the terminal pads 21a, 21b, and 21c and the inscribed circles 121a, 121b, and 121c depending on the direction This is because the difference has decreased. Therefore, when the wiring pattern includes arrangements in various directions and it is necessary to consider some distances between adjacent outer sides of the adjacent terminal pads 21a, 21b, 21c, the terminal pads 21a, 21b, 21c are You may comprise as a polygon more than a regular pentagon. Thereby, the difference between the distance between the adjacent outer edges of the terminal pads 21a, 21b, and 21c and the distance between the inscribed circles 121a, 121b, and 121c can be averaged with a small value. In addition, since the regular polygon has a larger area than the inscribed circles 121a, 121b, and 121c, it is possible to increase the soldering force of each of them.

このように、実施例2で示したように、端子パッド21、21a〜21cの形状は、正五角形以上の多角形としてもよい。実施例2によれば、複雑な端子パッド21、21a〜21cの配置パターンに対応しつつ、その半田接合強度を高めることができる。   Thus, as shown in the second embodiment, the shape of the terminal pads 21, 21a to 21c may be a regular pentagon or more polygon. According to the second embodiment, the solder joint strength can be increased while corresponding to the complicated arrangement pattern of the terminal pads 21 and 21a to 21c.

図7は、本発明を適用した実施例3に係る配線基板10dを示した側断面図である。図7において、配線基板10dの表面に形成された端子パッド22の立体形状又は断面形状が、中央部が突出した凸形状となっている点で、今まで説明した態様とは異なっている。図7においては、端子パッド22の立体形状は、略球面状に、端部から中央部にかけて滑らかに突出した凸形状となっている。このように、端子パッド22の表面の中央部を、立体的に突出させることによっても、端子パッド22の表面積を増加させて接合面積を増加させ、半田接合力を高めることができる。   FIG. 7 is a side sectional view showing a wiring board 10d according to a third embodiment to which the present invention is applied. In FIG. 7, the three-dimensional shape or the cross-sectional shape of the terminal pad 22 formed on the surface of the wiring board 10d is different from the mode described so far in that the center portion is a protruding shape. In FIG. 7, the three-dimensional shape of the terminal pad 22 is a substantially spherical shape, and is a convex shape that protrudes smoothly from the end to the center. As described above, even when the center portion of the surface of the terminal pad 22 is projected three-dimensionally, the surface area of the terminal pad 22 can be increased, the bonding area can be increased, and the solder bonding force can be increased.

また、図7においては、端子パッド22上に半導体素子80が搭載された状態が示されている。これは、端子パッド22の上に半田90が形成されるとともに、半導体素子80の電極にバンプ91が形成された後、両者により半導体素子80が配線基板10dの端子パッド22に接合された状態を示している。このように、本実施例に係る配線基板10dの端子パッド22は、半導体素子80搭載用配線基板の半導体素子搭載面に好適に適用可能である。なお、半導体素子80搭載工程については、詳細は後述する。   Further, FIG. 7 shows a state in which the semiconductor element 80 is mounted on the terminal pad 22. This is because the solder 90 is formed on the terminal pad 22 and the bump 91 is formed on the electrode of the semiconductor element 80, and then the semiconductor element 80 is bonded to the terminal pad 22 of the wiring board 10d by both. Show. Thus, the terminal pad 22 of the wiring board 10d according to the present embodiment can be suitably applied to the semiconductor element mounting surface of the semiconductor element 80 mounting wiring board. Details of the semiconductor element 80 mounting step will be described later.

また、実施例3に係る態様は、単独で従来の円形の端子パッド120に適用することも可能であるが、実施例1又は実施例2に係る正多角形の端子パッド20、20a〜20g、21a〜21cに適用して組み合わせた態様とすることが好ましい。これにより、実施例1又は実施例2の態様で、端子パッド20、20a〜20g、21a〜21cの表面積を平面的に増加させるとともに、実施例3に係る態様を適用して立体的にも表面積を増加させ、より半田接合力を強化することが可能となる。   Moreover, although the aspect which concerns on Example 3 can also be applied to the conventional circular terminal pad 120 independently, the regular polygonal terminal pad 20, 20a-20g which concerns on Example 1 or Example 2, It is preferable to apply to 21a to 21c and combine them. Thereby, in the aspect of Example 1 or Example 2, while increasing the surface area of the terminal pads 20, 20a-20g, 21a-21c planarly, the aspect which concerns on Example 3 is applied, and also in three dimensions. Thus, it is possible to further strengthen the solder bonding force.

図8は、実施例3の変形例に係る配線基板10eの断面構成を示した側断面図である。図8において、配線基板10eの表面に端子パッド23が形成され、端子パッド23の表面は、中央部が突出した凸形状となっているが、図7のように、端子パッド22の端部から滑らかに連続して中央部が突出してゆくのではなく、端部は平面状であり、中央部のみ段をなして突出した凸形状となっている。このように、突出形状は、中央部のみ段をなして凸形状を形成する態様であってもよい。かかる立体形状においても、中央の突出部において、その表面積は平面形状よりも増加しているので、やはり接合面積を増加させ、半田接合力を高めることができる。この変形例も、実施例1又は実施例2の平面形状と組み合わせることにより、更に半田接合力を向上させることができる。   FIG. 8 is a side sectional view showing a sectional configuration of a wiring board 10e according to a modification of the third embodiment. In FIG. 8, the terminal pad 23 is formed on the surface of the wiring board 10e, and the surface of the terminal pad 23 has a convex shape with the central portion protruding from the end of the terminal pad 22 as shown in FIG. The central part does not protrude smoothly and continuously, but the end part has a flat shape, and only the central part has a convex shape protruding in steps. As described above, the protruding shape may be a mode in which only the central portion is stepped to form a convex shape. Even in such a three-dimensional shape, since the surface area of the central protrusion is larger than that of the planar shape, it is possible to increase the bonding area and increase the solder bonding force. This modified example can be further improved in solder joint force by combining with the planar shape of Example 1 or Example 2.

なお、図8においても、端子パッド23上には、半導体素子80が半田90及びバンプ91により接合されて搭載された状態が示されている。図8に係る配線基板10eも、半導体素子80搭載用の基板に好適に適用でき、端子パッド23は、半導体搭載面の端子パッド23として好適に適用可能である。   FIG. 8 also shows a state in which the semiconductor element 80 is mounted on the terminal pad 23 by being joined by solder 90 and bumps 91. The wiring substrate 10e according to FIG. 8 can also be suitably applied to a substrate for mounting the semiconductor element 80, and the terminal pad 23 can be preferably applied as the terminal pad 23 on the semiconductor mounting surface.

このように、実施例3に係る配線基板10d、10eによれば、端子パッド22、23を、中央部を突出させた立体形状とすることにより、半田接合強度を高めることができる。また、実施例3に係る配線基板10d、10eを、実施例1又は実施例2に係る配線基板10、10a、10b、10cに適用して組み合わせることにより、一層半田接合強度を向上させることができる。   As described above, according to the wiring boards 10d and 10e according to the third embodiment, the terminal pads 22 and 23 are formed in a three-dimensional shape with the center portion protruding, so that the solder joint strength can be increased. Further, by combining and combining the wiring boards 10d and 10e according to the third embodiment to the wiring boards 10, 10a, 10b, and 10c according to the first or second embodiment, the solder joint strength can be further improved. .

次に、図9及び図10を用いて、実施例3の図7に係る配線基板10dの製造方法の一例について説明する。なお、図9及び図10は、配線基板10dの断面図を用いて説明するため、その平面形状は図示しないが、実施例1又は実施例2に係る配線基板10、10aの端子パッド20、20a〜20gが適用されているものとする。   Next, an example of a method for manufacturing the wiring board 10d according to FIG. 7 of the third embodiment will be described with reference to FIGS. 9 and 10 are described using the cross-sectional view of the wiring board 10d, and the planar shape thereof is not shown. However, the terminal pads 20, 20a of the wiring boards 10, 10a according to the first or second embodiment are not illustrated. ˜20 g shall be applied.

図9は、端子パッド22を製造するまでの配線基板10dの製造工程の一例を示した図である。   FIG. 9 is a diagram illustrating an example of a manufacturing process of the wiring board 10d until the terminal pad 22 is manufactured.

図9(a)は、支持体30が用意された状態を示す図である。図9(a)において、支持体30は、銅等の金属板又は金属箔が用いられ、配線基板10d作製のための土台となる支持体が準備される。   FIG. 9A is a diagram showing a state in which the support 30 is prepared. In FIG. 9A, a metal plate or a metal foil such as copper is used for the support body 30, and a support body serving as a base for manufacturing the wiring board 10d is prepared.

図9(b)は、レジストパターニング工程を示す図であり、支持体30の上に、めっきレジスト40がパターニングされた状態を示している。端子パッド22を形成する位置は開口され、端子パッド22を形成しない位置はめっきレジストで覆うようにしてパターニングされる。本製造工程においては、めっきレジスト40は、その開口41が、正多角形の形状に成形されたものが用いられる。なお、めっきレジスト40は、例えば、ドライフィルムが利用されてよい。   FIG. 9B is a diagram showing a resist patterning step, and shows a state in which the plating resist 40 is patterned on the support 30. The positions where the terminal pads 22 are formed are opened, and the positions where the terminal pads 22 are not formed are patterned so as to be covered with a plating resist. In the present manufacturing process, the plating resist 40 whose opening 41 is shaped into a regular polygon is used. The plating resist 40 may be a dry film, for example.

図9(c)は、エッチング工程を示す図である。本実施例に係る配線基板10dの製造工程においては、パターニング工程で、めっきレジスト40が金属の支持体30上にパターニングされたら、次にすぐめっきを行うのではなく、エッチングを行う。これにより、めっきレジスト40に覆われていない部分の支持体30の表面がエッチングされ、凹状の窪み31を形成する。ここに端子パッド22を形成してゆくことにより、凸形状の突出した端子パッド22を形成することができる。   FIG. 9C is a diagram showing an etching process. In the manufacturing process of the wiring substrate 10d according to the present embodiment, when the plating resist 40 is patterned on the metal support 30 in the patterning process, etching is performed instead of immediately performing plating. As a result, the surface of the support 30 that is not covered with the plating resist 40 is etched to form a concave recess 31. By forming the terminal pads 22 here, the protruding terminal pads 22 can be formed.

図9(d)は、端子パッド22形成工程を示す図である。電解めっきにより、端子パッド22を形成する金属で、層状にめっきがなされる。図9(d)においては、金(Au)により金めっき層25が形成された後、ニッケル(Ni)によりニッケルめっき層26が形成され、端子パッド22が形成される。なお、端子パッド22は、更にパラジウム(Pd)や銅(Cu)等がめっきされて端子パッド22を形成してもよい。端子パッド22の積層構成は、用途により種々の態様が適用されてよい。   FIG. 9D is a diagram showing a process of forming the terminal pad 22. By electroplating, the metal forming the terminal pad 22 is plated in layers. In FIG. 9D, after the gold plating layer 25 is formed of gold (Au), the nickel plating layer 26 is formed of nickel (Ni), and the terminal pads 22 are formed. The terminal pad 22 may be further plated with palladium (Pd), copper (Cu), or the like to form the terminal pad 22. Various modes may be applied to the laminated configuration of the terminal pads 22 depending on the application.

端子パッド22は、窪み31の形状に沿って、凹状に電解めっきがなされる。これにより、後の工程で、支持体30を除去することにより、凸状の端子パッド22を形成することができる。   The terminal pad 22 is electrolytically plated in a concave shape along the shape of the recess 31. Thereby, the convex terminal pad 22 can be formed by removing the support body 30 in a later step.

図9(e)は、めっきレジスト40除去工程を示した図である。めっきレジスト40除去工程において、端子パッド形成工程により、電解めっきは終了したので、不要となっためっきレジスト40を除去する。これにより、支持体30上に、端子パッド22が形成されたことになる。端子パッド22は、支持体30上に窪み31を有する立体形状で形成されているとともに、平面的には、正多角形で形成されている(平面形状は図示せず)。   FIG. 9E is a view showing a plating resist 40 removal step. In the plating resist 40 removing step, since the electroplating is completed by the terminal pad forming step, the unnecessary plating resist 40 is removed. As a result, the terminal pads 22 are formed on the support 30. The terminal pad 22 is formed in a three-dimensional shape having a recess 31 on the support 30 and is formed in a regular polygon in plan view (the planar shape is not shown).

図10は、端子パッド22形成後の、配線基板10d完成に至るまでの製造工程の一例を示した図である。   FIG. 10 is a diagram showing an example of the manufacturing process up to the completion of the wiring board 10d after the terminal pads 22 are formed.

図10(a)は、絶縁層50形成工程を示した図である。絶縁層50形成工程において、窪み31形状の端子パッド22の上に、絶縁層50を形成する。絶縁層50は、例えば、エポキシやポリイミド等の樹脂フィルムの積層で構成されてよい。   FIG. 10A is a diagram showing the step of forming the insulating layer 50. In the insulating layer 50 forming step, the insulating layer 50 is formed on the terminal pad 22 having the depression 31 shape. The insulating layer 50 may be composed of, for example, a laminate of resin films such as epoxy and polyimide.

図10(b)は、ビア穴55形成工程を示した図である。ビア穴55形成工程において、絶縁層50の、端子パッド22上の位置に、レーザー加工により穴あけを行い、ビア穴55を形成する。   FIG. 10B is a view showing the via hole 55 forming step. In the via hole 55 forming step, a hole is formed by laser processing at a position on the insulating pad 50 on the terminal pad 22 to form the via hole 55.

図10(c)は、配線層60形成工程を示した図である。配線層60形成工程において、銅、アルミニウム等の配線用金属を、ビア穴55に埋め込み、配線層60を形成する。配線層60形成工程は、例えば、無電解めっきによってのみ金属の埋め込みが行われて、配線層60を形成してもよいし、無電解めっきと電解めっきの組合せにより金属の埋め込みが行われてもよい。無電解めっきと電解めっきの組合せにより、配線層60を形成する場合(セミアディティブ法)には、絶縁層50の表面全体に、まず無電解めっきにより種めっきを行い、金属薄膜(シード層)を形成する。そして、平坦部のめっきをしたくない部分にめっきレジストを覆った後、電解めっきを行い、ビア穴55に銅等の金属を埋め込んで配線層60を形成する。その後めっきレジストを除去すれば、図10(c)に示す配線層60が形成される。   FIG. 10C is a diagram showing the wiring layer 60 forming step. In the wiring layer 60 forming step, a wiring metal such as copper or aluminum is embedded in the via hole 55 to form the wiring layer 60. In the wiring layer 60 forming step, for example, the metal may be embedded only by electroless plating to form the wiring layer 60, or the metal may be embedded by a combination of electroless plating and electrolytic plating. Good. When the wiring layer 60 is formed by a combination of electroless plating and electrolytic plating (semi-additive method), the entire surface of the insulating layer 50 is first subjected to seed plating by electroless plating to form a metal thin film (seed layer). Form. Then, after covering the plating resist on the portion where the flat portion is not desired to be plated, electrolytic plating is performed, and a metal such as copper is embedded in the via hole 55 to form the wiring layer 60. Thereafter, if the plating resist is removed, the wiring layer 60 shown in FIG. 10C is formed.

かかる図10(a)〜図10(c)で説明した、絶縁層50上にビア穴55を形成し、その後配線層60を形成する工程は、配線基板10dを多層配線基板として構成する場合には、所定回数繰り返して積層し、所望の層数の多層配線基板10dとすることができる。この場合には、積層絶縁層を形成する工程を積層絶縁層形成工程、積層絶縁層にビア穴を形成する工程を積層ビア穴工程、積層配線層を形成する工程を積層配線層形成工程と呼んでもよい。このように、用途に応じて、配線基板10dは、多層配線基板として構成することができる。   The step of forming the via hole 55 on the insulating layer 50 and then forming the wiring layer 60 described in FIGS. 10A to 10C is performed when the wiring board 10d is configured as a multilayer wiring board. Can be laminated repeatedly a predetermined number of times to form a multilayer wiring board 10d having a desired number of layers. In this case, the step of forming the laminated insulating layer is called the laminated insulating layer forming step, the step of forming the via hole in the laminated insulating layer is called the laminated via hole step, and the step of forming the laminated wiring layer is called the laminated wiring layer forming step. But you can. Thus, depending on the application, the wiring board 10d can be configured as a multilayer wiring board.

図10(d)は、ソルダレジスト70形成工程を示した図である。図10(d)において、配線基板10dは、上述の積層配線層形成工程を経て、支持体30及び端子パッド22の上に、絶縁層50、ビア穴55、配線層60、積層絶縁層51、積層ビア穴56、積層配線層61、積層絶縁層52、積層ビア穴57及び積層配線層62が順に下から積層されて形成され、3層の積層構造となっている。そして、最も上層の配線層62上には、ソルダレジスト70形成工程において、ソルダレジスト70が形成される。これにより、外部接続端子24が形成される。   FIG. 10D is a diagram showing a solder resist 70 forming step. In FIG. 10D, the wiring substrate 10d is subjected to the above-described laminated wiring layer forming step, and the insulating layer 50, the via hole 55, the wiring layer 60, the laminated insulating layer 51, the support layer 30 and the terminal pad 22. The laminated via hole 56, the laminated wiring layer 61, the laminated insulating layer 52, the laminated via hole 57, and the laminated wiring layer 62 are sequentially laminated from the bottom to form a three-layer laminated structure. Then, the solder resist 70 is formed on the uppermost wiring layer 62 in the solder resist 70 forming step. Thereby, the external connection terminal 24 is formed.

なお、図10(d)においては、配線基板10dが多層配線構造を有する配線基板10dとして形成された例が示されているが、これを単層配線構造とする場合には、図10(c)の配線層60形成工程において第1層目の配線層60が形成された後、直ちにソルダレジスト70形成工程を実行し、第1層目の配線層60の上にソルダレジスト70を形成すればよい。このように、ソルダレジスト70形成工程は、配線基板10dの層構造態様に応じて、最終配線層の形成後に実行するようにしてよい。   FIG. 10D shows an example in which the wiring board 10d is formed as a wiring board 10d having a multilayer wiring structure. However, when this is a single-layer wiring structure, FIG. After the first wiring layer 60 is formed in the step of forming the wiring layer 60), the solder resist 70 forming step is immediately executed to form the solder resist 70 on the first wiring layer 60. Good. As described above, the solder resist 70 forming step may be performed after the final wiring layer is formed according to the layer structure of the wiring substrate 10d.

図10(e)は、支持体30除去工程を示した図である。支持体30除去工程においては、エッチングにより、金属の支持体30を除去する。これにより、端子パッド22が表面に露出され、端子パッド22の露出面は、例えば半導体素子搭載面を構成する。
通常は、図10(e)の状態を上下反対とし、端子パッド22が形成された半導体素子面を上側にして半導体素子を搭載し、端子パッド24が形成された外部接続端子面を下側にして外部接続用に用いる場合が多い。
FIG. 10E is a diagram showing the support 30 removing step. In the support 30 removal step, the metal support 30 is removed by etching. Thereby, the terminal pad 22 is exposed on the surface, and the exposed surface of the terminal pad 22 constitutes, for example, a semiconductor element mounting surface.
Normally, the state of FIG. 10E is reversed upside down, the semiconductor element is mounted with the semiconductor element surface on which the terminal pad 22 is formed facing up, and the external connection terminal surface on which the terminal pad 24 is formed is facing down. Often used for external connections.

なお、図9及び図10においては、半導体素子搭載面の端子パッド22に本発明を適用する例について説明したが、図10(d)のソルダレジスト70形成工程において、ソルダレジスト70の開口71の形状を正多角形とすれば、外部接続端子面にも本発明を適用することができる。   9 and 10, the example in which the present invention is applied to the terminal pads 22 on the semiconductor element mounting surface has been described. However, in the solder resist 70 forming step of FIG. 10D, the openings 71 of the solder resist 70 are formed. If the shape is a regular polygon, the present invention can also be applied to the external connection terminal surface.

次に、図11を用いて、本実施例に係る配線基板10dを、半導体素子搭載用の配線基板に適用した例について説明する。図11は、半導体素子搭載用の配線基板10dに、半導体素子80を搭載する半導体素子搭載工程の例を示した図である。   Next, an example in which the wiring board 10d according to the present embodiment is applied to a wiring board for mounting semiconductor elements will be described with reference to FIG. FIG. 11 is a diagram showing an example of a semiconductor element mounting process for mounting the semiconductor element 80 on the wiring board 10d for mounting the semiconductor element.

図11(a)は、半導体素子搭載用の配線基板10dが載置され、端子パッド22上にプレソルダ90が形成された状態を示した図である。配線基板10dは、凸形状の立体形状で、かつ正多角形の平面形状(図示せず)の端子パッド22を有する面を半導体素子搭載面とし、この面を上側に配置している。一方、反対側には端子パッド24が形成され、外部接続端子面を形成している。端子パッド24も、正方形等の正多角形に形成され、本発明が適用されてよい。また、更に、端子パッド24も、凸形状の立体形状に形成されてもよい。本発明は、表面に端子パッド22、24を有する総ての配線基板に適用することができるので、半導体搭載面の端子パッド22のみならず、外部接続端子面の端子パッド24にも適用可能である。   FIG. 11A is a diagram showing a state in which the wiring board 10 d for mounting a semiconductor element is placed and the pre-solder 90 is formed on the terminal pad 22. The wiring substrate 10d has a convex three-dimensional shape and a surface having terminal pads 22 having a regular polygonal planar shape (not shown) as a semiconductor element mounting surface, and this surface is disposed on the upper side. On the other hand, a terminal pad 24 is formed on the opposite side to form an external connection terminal surface. The terminal pad 24 is also formed in a regular polygon such as a square, and the present invention may be applied thereto. Furthermore, the terminal pad 24 may also be formed in a convex three-dimensional shape. Since the present invention can be applied to all wiring boards having the terminal pads 22 and 24 on the surface, the present invention can be applied not only to the terminal pads 22 on the semiconductor mounting surface but also to the terminal pads 24 on the external connection terminal surface. is there.

なお、図11(a)に示す配線基板10dは、上側から絶縁層50、ビア穴55、配線層60、積層絶縁層51、積層ビア穴56、積層配線層61、積層絶縁層52、積層ビア穴57及び積層配線層62を有する3層の積層配線構造を有する。   Note that the wiring substrate 10d shown in FIG. 11A has an insulating layer 50, a via hole 55, a wiring layer 60, a laminated insulating layer 51, a laminated via hole 56, a laminated wiring layer 61, a laminated insulating layer 52, and a laminated via from above. A three-layer laminated wiring structure having a hole 57 and a laminated wiring layer 62 is provided.

図11(a)において、かかる構成を有する配線基板10dに半導体素子を搭載するため、まず半導体搭載面の端子パッド22上に、半田ペーストが塗布されるか、又は半田ボールを搭載することにより、半田形成がなされる。つまり、端子パッド22上に、プレソルダ90が形成される。   In FIG. 11A, in order to mount a semiconductor element on the wiring board 10d having such a configuration, first, solder paste is applied or solder balls are mounted on the terminal pads 22 on the semiconductor mounting surface. Solder formation is performed. That is, the pre-solder 90 is formed on the terminal pad 22.

図11(b)は、配線基板10dに対し、電極にバンプ91を形成した半導体素子80が用意された状態を示した図である。つまり、搭載される半導体チップ等の半導体素子80の電極端子にも、バンプ91が形成され、半導体素子80の電極端子と、配線基板10dの端子パッド22との半田接合のための準備がなされる。   FIG. 11B is a diagram showing a state in which a semiconductor element 80 in which bumps 91 are formed on electrodes is prepared for the wiring board 10d. In other words, bumps 91 are also formed on the electrode terminals of the semiconductor element 80 such as a semiconductor chip to be mounted, and preparation for solder bonding between the electrode terminals of the semiconductor element 80 and the terminal pads 22 of the wiring board 10d is made. .

図11(c)は、フリップリップボンディングにより、半導体素子80が配線基板10dに接合した状態を示した図である。つまり、半導体素子80のバンプ91と、配線基板10dの端子パッド22上の半田により、半導体素子80を配線基板10dの端子パッド22に接合する。端子パッド22の表面積は増加しているので、高い接合力で接合がなされる。   FIG. 11C is a diagram showing a state in which the semiconductor element 80 is bonded to the wiring board 10d by flip lip bonding. That is, the semiconductor element 80 is bonded to the terminal pad 22 of the wiring board 10d by the bump 91 of the semiconductor element 80 and the solder on the terminal pad 22 of the wiring board 10d. Since the surface area of the terminal pad 22 is increased, bonding is performed with a high bonding force.

図11(d)は、アンダーフィル樹脂100の充填により、半導体パッケージが完成した状態を示した図である。つまり、半導体素子80と配線基板10dとの間に、アンダーフィル樹脂100を充填し、保護膜を形成し、半導体パッケージが完成する。半導体素子80と配線基板10dとの接合力の高い半導体パッケージとすることができる。   FIG. 11D is a view showing a state where the semiconductor package is completed by filling the underfill resin 100. That is, the underfill resin 100 is filled between the semiconductor element 80 and the wiring substrate 10d to form a protective film, thereby completing the semiconductor package. A semiconductor package having a high bonding strength between the semiconductor element 80 and the wiring substrate 10d can be obtained.

このように、表面積の増加した端子パッド22を用いることにより、半導体素子80との半田接合力を強化した配線基板10dとすることができる。   Thus, by using the terminal pad 22 having an increased surface area, it is possible to obtain the wiring substrate 10d having an enhanced solder bonding force with the semiconductor element 80.

なお、図11においては、配線基板10dは、実施例3の図7に係る態様を例に挙げて説明したが、他の実施例において説明した配線基板10、10a〜10c、10eも好適に適用可能である。   In FIG. 11, the wiring board 10 d has been described by taking the embodiment according to FIG. 7 of Example 3 as an example, but the wiring boards 10, 10 a to 10 c, 10 e described in other examples are also suitably applied. Is possible.

図12は、本発明を適用した実施例4に係る配線基板10fの断面構成を示した側断面図である。図12において、配線基板10fの表面には、略球面状に中央部が突出した立体形状を有する端子パッド27が形成され、その上には、半田90によりピン85が接合されている。図12に係る配線基板10fの端子パッド27は、その立体形状は、実施例3の図7に係る配線基板10dの端子パッド22と同様であるが、接合されている部材が、ピン85である点で異なっている。   FIG. 12 is a side sectional view showing a sectional configuration of a wiring board 10f according to the fourth embodiment to which the present invention is applied. In FIG. 12, a terminal pad 27 having a three-dimensional shape with a central portion protruding in a substantially spherical shape is formed on the surface of the wiring board 10 f, and a pin 85 is joined thereon by solder 90. The terminal pad 27 of the wiring board 10f according to FIG. 12 has the same three-dimensional shape as the terminal pad 22 of the wiring board 10d according to FIG. 7 of the third embodiment, but the joined members are pins 85. It is different in point.

ピン85は、配線基板10fの外部接続端子として使用され、そのヘッド部86は外部端子接続用の端子パッド27に半田接合され、軸部87は例えばマザーボード(図示せず)のソケット(図示せず)に挿入され、マザーボードと配線基板10fとの電気的接続を行う。このように、配線基板10fの端子パッド27は、外部端子接続用の端子パッド27に適用されてもよい。かかる態様においても、端子パッド27の表面積は中央部の突出により増加しているので、外部接続端子であるピン85のヘッド部86との半田接合力を向上させることができる。   The pin 85 is used as an external connection terminal of the wiring board 10f, its head portion 86 is soldered to the terminal pad 27 for external terminal connection, and the shaft portion 87 is, for example, a socket (not shown) of a mother board (not shown). ) To electrically connect the mother board and the wiring board 10f. Thus, the terminal pad 27 of the wiring board 10f may be applied to the terminal pad 27 for external terminal connection. Also in this aspect, since the surface area of the terminal pad 27 is increased by the protrusion of the central portion, it is possible to improve the solder bonding force with the head portion 86 of the pin 85 which is an external connection terminal.

なお、図12においては、外部接続端子としてピン85を用いたいわゆるPGA(Pin Grid Array)型パッケージの例を示しているが、外部接続端子に半田ボール(図示せず)を用いたBGA(Ball Grid Array)型パッケージや、端子パッド27自体を外部接続端子としたLGA(Land Grid Array)型パッケージに適用してもよい。いずれの態様であっても、端子パッド27の中央部が隆起した立体形状により、半田接合面積が増加しているので、各々半田接合力を高めることができる。   In FIG. 12, an example of a so-called PGA (Pin Grid Array) type package using pins 85 as external connection terminals is shown, but a BGA (Ball) using solder balls (not shown) as external connection terminals is shown. The present invention may be applied to a (Grid Array) type package or an LGA (Land Grid Array) type package using the terminal pad 27 itself as an external connection terminal. In any embodiment, the solder joint area is increased due to the three-dimensional shape in which the central portion of the terminal pad 27 is raised, so that the solder joint force can be increased.

なお、実施例4の態様においても、実施例1又は実施例2に係る配線基板10、10a〜10cの端子パッド20、20a〜20g、21、21a〜21cの平面形状と組み合わせることが好ましいことは、実施例3の態様と同様である。また、実施例3の態様と組み合わせ、半導体素子搭載面及び外部接続端子面の双方の端子パッド22、23、27の表面積を増加させるようにすれば、両面において半田接合力が強化された配線基板10fとすることが可能となる。   In addition, also in the aspect of Example 4, it is preferable to combine with the planar shape of the terminal pads 20, 20a to 20g, 21, and 21a to 21c of the wiring board 10, 10a to 10c according to Example 1 or Example 2. This is the same as in the third embodiment. Further, if the surface area of the terminal pads 22, 23, 27 on both the semiconductor element mounting surface and the external connection terminal surface is increased in combination with the aspect of the third embodiment, the wiring board with enhanced solder joint strength on both surfaces 10f can be set.

図13は、実施例4の変形例に係る配線基板10gの断面構成を示した側断面図である。図13において、その基本構成は図12に係る配線基板10fと同様であり、ピン85が半田接合される外部接続端子用の端子パッド28が表面に形成されているが、端子パッド28の立体形状が、端部は平坦であり、中央部のみが突出している点で、図12に係る配線基板10fと異なっている。この立体形状は、実施例3の図8に係る配線基板10eの端子パッド23と同様であり、かかる立体形状によっても、ピン85のヘッド部86と端子パッド28との半田接合力を高めることができる。   FIG. 13 is a side sectional view showing a sectional configuration of a wiring board 10g according to a modification of the fourth embodiment. In FIG. 13, the basic configuration is the same as that of the wiring board 10f according to FIG. 12, and the terminal pads 28 for external connection terminals to which the pins 85 are soldered are formed on the surface. However, it is different from the wiring substrate 10f according to FIG. 12 in that the end portion is flat and only the central portion protrudes. This three-dimensional shape is the same as that of the terminal pad 23 of the wiring board 10e according to FIG. 8 of the third embodiment, and this three-dimensional shape also increases the solder bonding force between the head portion 86 of the pin 85 and the terminal pad 28. it can.

なお、配線基板10gも、外部接続端子をピン85とするPGA型パッケージの他、外部接続端子を半田ボールとするBGA型パッケージ、端子パッド28自体を外部接続端子とするLGA型パッケージに適用してもよく、また実施例1〜3と適宜組み合わせてよいことは、図12に係る配線基板10fと同様である。   In addition to the PGA type package having the external connection terminal as the pin 85, the wiring board 10g is applied to a BGA type package having the external connection terminal as a solder ball and an LGA type package having the terminal pad 28 itself as the external connection terminal. The wiring board 10f according to FIG. 12 may be combined with the first to third embodiments as appropriate.

なお、実施例4に係る外部接続端子用の端子パッド27、28を有する配線基板10f、10gは、図9〜10において説明した配線基板10dの製造工程において、端子パッド22を外部端子接続用の端子パッド27、28に適用することで、図9〜10に説明したのと同様の製造方法により製造することができる。この場合には、反対側の端子パッド24を半導体搭載用の端子パッドとして適用すればよい。   The wiring boards 10f and 10g having the terminal pads 27 and 28 for external connection terminals according to the fourth embodiment are used for connecting the terminal pads 22 to the external terminals in the manufacturing process of the wiring board 10d described with reference to FIGS. By applying to the terminal pads 27 and 28, it can manufacture with the manufacturing method similar to having demonstrated to FIGS. In this case, the terminal pad 24 on the opposite side may be applied as a semiconductor mounting terminal pad.

このように、本発明により、半田接合力の高い配線基板10、10a〜10gを提供することができる。なお、本実施例においては、本発明を半導体搭載用の配線基板10、10a〜10gに適用する例を中心に説明したが、半田接合用の端子パッドを表面に有する配線基板であれば、種々の用途に用いられる種々の態様の配線基板に本発明を適用することが可能である。   As described above, according to the present invention, it is possible to provide the wiring boards 10, 10 a to 10 g having high solder bonding strength. In the present embodiment, the description has been made mainly on the case where the present invention is applied to the wiring board 10 for semiconductor mounting, 10a to 10g. However, as long as the wiring board has a terminal pad for solder bonding on the surface, there are various types. It is possible to apply this invention to the wiring board of the various aspect used for this use.

以上、本発明の好ましい実施例について詳説したが、本発明は、上述した実施例に制限されることはなく、本発明の範囲を逸脱することなく、上述した実施例に種々の変形及び置換を加えることができる。   The preferred embodiments of the present invention have been described in detail above. However, the present invention is not limited to the above-described embodiments, and various modifications and substitutions can be made to the above-described embodiments without departing from the scope of the present invention. Can be added.

本発明を適用した実施例1に係る配線基板10の平面構成図である。It is a plane lineblock diagram of wiring board 10 concerning Example 1 to which the present invention is applied. 図1の配線基板10の隣接する2つの端子パッド20を拡大した図である。FIG. 2 is an enlarged view of two adjacent terminal pads 20 of the wiring board 10 of FIG. 1. 図2の端子パッド20a、20bに、端子パッド20c、20dを加えた配線基板10の拡大平面図である。FIG. 3 is an enlarged plan view of a wiring board 10 in which terminal pads 20 c and 20 d are added to the terminal pads 20 a and 20 b of FIG. 2. 実施例1の変形例に係る配線基板10aの平面構成図である。6 is a plan configuration diagram of a wiring board 10a according to a modification of Example 1. FIG. 本発明を適用した実施例2に係る配線基板10bの平面構成を示した図である。It is the figure which showed the plane structure of the wiring board 10b which concerns on Example 2 to which this invention is applied. 実施例2の変形例に係る配線基板10cの平面構成を示した図である。FIG. 10 is a diagram showing a planar configuration of a wiring board 10c according to a modification of Example 2. 本発明を適用した実施例3に係る配線基板10dを示した側断面図である。It is the sectional side view which showed the wiring board 10d which concerns on Example 3 to which this invention is applied. 実施例3の変形例に係る配線基板10eの断面構成を示した側断面図である。10 is a side sectional view showing a sectional configuration of a wiring board 10e according to a modification of Example 3. FIG. 端子パッド22を製造するまでの配線基板10dの製造工程例を示した図である。図9(a)は、支持体30が用意された状態を示す図である。図9(b)は、レジストパターニング工程を示す図である。図9(c)は、エッチング工程を示す図である。図9(d)は、端子パッド形成工程を示す図である。図9(e)は、めっきレジスト除去工程を示した図である。It is the figure which showed the example of a manufacturing process of the wiring board 10d until manufacturing the terminal pad 22. FIG. FIG. 9A is a diagram showing a state in which the support 30 is prepared. FIG. 9B is a diagram showing a resist patterning process. FIG. 9C is a diagram showing an etching process. FIG. 9D is a diagram showing a terminal pad forming process. FIG. 9E is a diagram showing a plating resist removing process. 端子パッド形成後、配線基板10c完成までの製造工程例を示した図である。図10(a)は、絶縁層形成工程を示した図である。図10(b)は、ビア穴形成工程を示した図である。図10(c)は、配線層形成工程を示した図である。図10(d)は、ソルダレジスト形成工程を示した図である。図10(e)は、支持体除去工程を示した図である。It is the figure which showed the example of the manufacturing process until wiring board 10c completion after terminal pad formation. FIG. 10A is a diagram showing an insulating layer forming step. FIG. 10B is a view showing a via hole forming step. FIG. 10C is a diagram showing a wiring layer forming process. FIG. 10D is a diagram showing a solder resist forming process. FIG. 10E is a diagram showing a support removing process. 半導体素子搭載工程を示した図である。図11(a)は、配線基板10dの端子パッド22上にプレソルダ90が形成された状態を示した図である。図11(b)は、電極にバンプ90を形成した半導体素子80が用意された状態を示した図である。図11(c)は、半導体素子80が配線基板10dに接合した状態を示した図である。図11(d)は、半導体パッケージが完成した状態を示した図である。It is the figure which showed the semiconductor element mounting process. FIG. 11A is a view showing a state in which the pre-solder 90 is formed on the terminal pad 22 of the wiring board 10d. FIG. 11B is a diagram showing a state in which a semiconductor element 80 having bumps 90 formed on electrodes is prepared. FIG. 11C shows a state in which the semiconductor element 80 is bonded to the wiring board 10d. FIG. 11D is a diagram showing a state where the semiconductor package is completed. 本発明を適用した実施例4に係る配線基板10fの側断面図である。It is a sectional side view of the wiring board 10f which concerns on Example 4 to which this invention is applied. 実施例4の変形例に係る配線基板10gの断面構成を示した側断面図である。FIG. 10 is a side sectional view showing a sectional configuration of a wiring board 10g according to a modification of Example 4; 従来の配線基板110の平面構成図である。It is a plane block diagram of the conventional wiring board 110. FIG.

符号の説明Explanation of symbols

10、10a、10b、10c、10d、10e、10f、10g 配線基板
20、20a〜20g、21、21a〜21c、22、23、24、27、28 端子パッド
25 金めっき層
26 ニッケルめっき層
30 支持体
31 窪み
40 めっきレジスト
41、71 開口
50、51、52 絶縁層
55 ビア穴
60、61、62 配線層
70 ソルダレジスト
80 半導体素子
85 ピン
86 ヘッド部
87 軸部
90 半田(プレソルダ)
91 バンプ
100 アンダーフィル樹脂
120、120a〜120g、121、121a〜121c 内接円
10, 10a, 10b, 10c, 10d, 10e, 10f, 10g Wiring board 20, 20a-20g, 21, 21a-21c, 22, 23, 24, 27, 28 Terminal pad 25 Gold plating layer 26 Nickel plating layer 30 Support Body 31 Dimple 40 Plating resist 41, 71 Opening 50, 51, 52 Insulating layer 55 Via hole 60, 61, 62 Wiring layer 70 Solder resist 80 Semiconductor element 85 Pin 86 Head part 87 Shaft part 90 Solder (pre-solder)
91 Bump 100 Underfill resin 120, 120a to 120g, 121, 121a to 121c Inscribed circle

Claims (7)

表面に半田接合用の複数の端子パッドを有する配線基板であって、
前記複数の端子パッドは、平面形状が正多角形に形成され、
該正多角形の内心が、所定のピッチで配列されたことを特徴とする配線基板。
A wiring board having a plurality of terminal pads for solder bonding on the surface,
The plurality of terminal pads have a planar shape formed in a regular polygon,
A wiring board characterized in that the inner centers of the regular polygons are arranged at a predetermined pitch.
前記複数の端子パッドは、前記正多角形が同じ向きとなるように形成されたことを特徴とする請求項1に記載の配線基板。   The wiring board according to claim 1, wherein the plurality of terminal pads are formed such that the regular polygons have the same orientation. 前記複数の端子パッドは、格子をなして配列され、
前記正多角形は、前記格子と平行な辺で形成された正方形であることを特徴とする請求項1又は2に記載の配線基板。
The plurality of terminal pads are arranged in a lattice,
The wiring board according to claim 1, wherein the regular polygon is a square formed with sides parallel to the lattice.
前記端子パッドの立体形状は、表面の中央部が突出した凸形状であることを特徴とする請求項1乃至3のいずれか一項に記載の配線基板。   4. The wiring board according to claim 1, wherein the three-dimensional shape of the terminal pad is a convex shape with a central portion of the surface protruding. 5. 前記表面は、半導体素子が搭載される半導体搭載面であることを特徴とする請求項1乃至4のいずれか一項に記載の配線基板。   The wiring board according to claim 1, wherein the surface is a semiconductor mounting surface on which a semiconductor element is mounted. 前記表面は、外部接続端子面であって、
該外部接続端子面の反対面には、半導体素子が搭載される半導体搭載面が形成されていることを特徴とする請求項1乃至5のいずれか一項に記載の配線基板。
The surface is an external connection terminal surface,
The wiring board according to claim 1, wherein a semiconductor mounting surface on which a semiconductor element is mounted is formed on a surface opposite to the external connection terminal surface.
平面形状が正多角形であり、立体形状が中央部の突出した凸形状である端子パッドを有する配線基板の製造方法であって、
金属からなる支持体に、正多角形の開口を有するレジストをパターンニングするレジストパターンニング工程と、
エッチングを行い、前記レジストが覆われていない部分の前記支持体に凹状の窪みを形成するエッチング工程と、
前記窪みに、電解めっきにより前記端子パッドを形成する端子パッド形成工程と、
前記レジストを除去するレジスト除去工程と、
前記端子パッドが形成された前記支持体の表面に、絶縁層を形成する絶縁層形成工程と、
前記絶縁層上に、前記端子パッドと接続された配線層を形成する配線層形成工程と、
前記支持体を、エッチングにより除去する支持体除去工程と、を含むことを特徴とする配線基板の製造方法。
A method for manufacturing a wiring board having a terminal pad whose planar shape is a regular polygon and whose three-dimensional shape is a protruding shape protruding from the center,
A resist patterning step of patterning a resist having a regular polygonal opening on a metal support;
An etching step of performing etching and forming a concave depression in the support in a portion where the resist is not covered;
A terminal pad forming step for forming the terminal pad in the recess by electrolytic plating;
A resist removing step for removing the resist;
An insulating layer forming step of forming an insulating layer on the surface of the support on which the terminal pads are formed;
A wiring layer forming step of forming a wiring layer connected to the terminal pad on the insulating layer;
A method of manufacturing a wiring board, comprising: a support removing step of removing the support by etching.
JP2007222917A 2007-08-29 2007-08-29 Wiring board and manufacturing method thereof Active JP5043563B2 (en)

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011122924A (en) * 2009-12-10 2011-06-23 Renesas Electronics Corp Semiconductor device and method of manufacturing the same
CN102378484A (en) * 2010-08-13 2012-03-14 雅达电子有限公司 Method for improving solder joint reliability, printed circuit board, packaging device and packaging module
CN105357900A (en) * 2015-12-03 2016-02-24 北京浩瀚深度信息技术股份有限公司 PAD design method capable of for eliminating special-shaped SMD component reflow soldering displacement
KR20190087729A (en) * 2018-01-17 2019-07-25 주식회사 루멘스 Led display module
JP2021022718A (en) * 2019-07-30 2021-02-18 力成科技股▲分▼有限公司 Package structure and manufacturing method thereof
EP3937229A1 (en) * 2020-07-08 2022-01-12 Beijing Xiaomi Mobile Software Co., Ltd. Chip, circuit board and electronic device
US11600584B2 (en) 2020-03-26 2023-03-07 Beijing Xiaomi Mobile Software Co., Ltd. Chip, circuit board and electronic device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0846079A (en) * 1994-07-28 1996-02-16 Matsushita Electric Ind Co Ltd Semiconductor device
JPH11204570A (en) * 1998-01-08 1999-07-30 Sumitomo Metal Smi Electron Devices Inc External input/output terminal
JP2001077517A (en) * 1999-09-01 2001-03-23 Matsushita Electric Ind Co Ltd Electronic component and manufacture thereof
JP2004200187A (en) * 2002-12-16 2004-07-15 Nikon Corp Printed-wiring board
JP2005236244A (en) * 2004-01-19 2005-09-02 Shinko Electric Ind Co Ltd Manufacturing method of circuit substrate
JP2005244149A (en) * 2004-01-26 2005-09-08 Kyocera Corp Wiring substrate

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0846079A (en) * 1994-07-28 1996-02-16 Matsushita Electric Ind Co Ltd Semiconductor device
JPH11204570A (en) * 1998-01-08 1999-07-30 Sumitomo Metal Smi Electron Devices Inc External input/output terminal
JP2001077517A (en) * 1999-09-01 2001-03-23 Matsushita Electric Ind Co Ltd Electronic component and manufacture thereof
JP2004200187A (en) * 2002-12-16 2004-07-15 Nikon Corp Printed-wiring board
JP2005236244A (en) * 2004-01-19 2005-09-02 Shinko Electric Ind Co Ltd Manufacturing method of circuit substrate
JP2005244149A (en) * 2004-01-26 2005-09-08 Kyocera Corp Wiring substrate

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011122924A (en) * 2009-12-10 2011-06-23 Renesas Electronics Corp Semiconductor device and method of manufacturing the same
CN102378484A (en) * 2010-08-13 2012-03-14 雅达电子有限公司 Method for improving solder joint reliability, printed circuit board, packaging device and packaging module
CN105357900A (en) * 2015-12-03 2016-02-24 北京浩瀚深度信息技术股份有限公司 PAD design method capable of for eliminating special-shaped SMD component reflow soldering displacement
KR20190087729A (en) * 2018-01-17 2019-07-25 주식회사 루멘스 Led display module
KR102519736B1 (en) * 2018-01-17 2023-04-11 주식회사 루멘스 Led display module
JP2021022718A (en) * 2019-07-30 2021-02-18 力成科技股▲分▼有限公司 Package structure and manufacturing method thereof
US11600584B2 (en) 2020-03-26 2023-03-07 Beijing Xiaomi Mobile Software Co., Ltd. Chip, circuit board and electronic device
EP3937229A1 (en) * 2020-07-08 2022-01-12 Beijing Xiaomi Mobile Software Co., Ltd. Chip, circuit board and electronic device
KR20220006453A (en) * 2020-07-08 2022-01-17 베이징 시아오미 모바일 소프트웨어 컴퍼니 리미티드 Chip, circuit board and electronic device
JP2022016281A (en) * 2020-07-08 2022-01-21 北京小米移動軟件有限公司 Chip, circuit board, and electronic device
KR102561245B1 (en) * 2020-07-08 2023-07-31 베이징 시아오미 모바일 소프트웨어 컴퍼니 리미티드 Chip, circuit board and electronic device

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