JP2009053477A - 電気光学装置及び電子機器 - Google Patents
電気光学装置及び電子機器 Download PDFInfo
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- JP2009053477A JP2009053477A JP2007220685A JP2007220685A JP2009053477A JP 2009053477 A JP2009053477 A JP 2009053477A JP 2007220685 A JP2007220685 A JP 2007220685A JP 2007220685 A JP2007220685 A JP 2007220685A JP 2009053477 A JP2009053477 A JP 2009053477A
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- insulating film
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- 239000004065 semiconductor Substances 0.000 claims abstract description 70
- 230000006870 function Effects 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 11
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- 238000012360 testing method Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
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- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 239000003566 sealing material Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
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- 238000005468 ion implantation Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910018182 Al—Cu Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004988 Nematic liquid crystal Substances 0.000 description 1
- 229910018594 Si-Cu Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910008465 Si—Cu Inorganic materials 0.000 description 1
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- 229910052804 chromium Inorganic materials 0.000 description 1
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- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
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- 230000001678 irradiating effect Effects 0.000 description 1
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- 238000005259 measurement Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
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- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Images
Landscapes
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007220685A JP2009053477A (ja) | 2007-08-28 | 2007-08-28 | 電気光学装置及び電子機器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007220685A JP2009053477A (ja) | 2007-08-28 | 2007-08-28 | 電気光学装置及び電子機器 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009053477A true JP2009053477A (ja) | 2009-03-12 |
JP2009053477A5 JP2009053477A5 (enrdf_load_stackoverflow) | 2010-09-02 |
Family
ID=40504610
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007220685A Withdrawn JP2009053477A (ja) | 2007-08-28 | 2007-08-28 | 電気光学装置及び電子機器 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2009053477A (enrdf_load_stackoverflow) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103246381A (zh) * | 2012-02-13 | 2013-08-14 | 联胜(中国)科技有限公司 | 触控显示面板 |
WO2017181464A1 (zh) * | 2016-04-18 | 2017-10-26 | 武汉华星光电技术有限公司 | Tft阵列基板及其制作方法 |
JP2020202579A (ja) * | 2011-07-15 | 2020-12-17 | 株式会社半導体エネルギー研究所 | 半導体装置 |
-
2007
- 2007-08-28 JP JP2007220685A patent/JP2009053477A/ja not_active Withdrawn
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020202579A (ja) * | 2011-07-15 | 2020-12-17 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2022118032A (ja) * | 2011-07-15 | 2022-08-12 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP7371167B2 (ja) | 2011-07-15 | 2023-10-30 | 株式会社半導体エネルギー研究所 | 半導体装置 |
CN103246381A (zh) * | 2012-02-13 | 2013-08-14 | 联胜(中国)科技有限公司 | 触控显示面板 |
WO2017181464A1 (zh) * | 2016-04-18 | 2017-10-26 | 武汉华星光电技术有限公司 | Tft阵列基板及其制作方法 |
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