JP2009043513A - Chip fuse, and manufacturing method thereof - Google Patents

Chip fuse, and manufacturing method thereof Download PDF

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Publication number
JP2009043513A
JP2009043513A JP2007206314A JP2007206314A JP2009043513A JP 2009043513 A JP2009043513 A JP 2009043513A JP 2007206314 A JP2007206314 A JP 2007206314A JP 2007206314 A JP2007206314 A JP 2007206314A JP 2009043513 A JP2009043513 A JP 2009043513A
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Prior art keywords
fuse
heat storage
storage layer
insulating substrate
film
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JP2007206314A
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JP4510858B2 (en
Inventor
Katsuya Yamagishi
克哉 山岸
Hideki Kiyono
英樹 清野
Hitoshi Sato
仁 佐藤
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Kamaya Electric Co Ltd
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Kamaya Electric Co Ltd
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Priority to JP2007206314A priority Critical patent/JP4510858B2/en
Priority to KR1020087023290A priority patent/KR101037300B1/en
Priority to PCT/JP2008/053547 priority patent/WO2009019903A1/en
Priority to CN2008800004039A priority patent/CN101542670B/en
Publication of JP2009043513A publication Critical patent/JP2009043513A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H85/00—Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive
    • H01H85/02—Details
    • H01H85/04—Fuses, i.e. expendable parts of the protective device, e.g. cartridges
    • H01H85/041—Fuses, i.e. expendable parts of the protective device, e.g. cartridges characterised by the type
    • H01H85/0411—Miniature fuses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H85/00—Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive
    • H01H85/0039—Means for influencing the rupture process of the fusible element
    • H01H85/0047—Heating means
    • H01H85/0056—Heat conducting or heat absorbing means associated with the fusible member, e.g. for providing time delay
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H85/00—Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive
    • H01H85/02—Details
    • H01H85/04—Fuses, i.e. expendable parts of the protective device, e.g. cartridges
    • H01H85/05—Component parts thereof
    • H01H85/055—Fusible members
    • H01H85/08—Fusible members characterised by the shape or form of the fusible member
    • H01H85/10—Fusible members characterised by the shape or form of the fusible member with constriction for localised fusing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H85/00—Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive
    • H01H85/02—Details
    • H01H85/04—Fuses, i.e. expendable parts of the protective device, e.g. cartridges
    • H01H85/041—Fuses, i.e. expendable parts of the protective device, e.g. cartridges characterised by the type
    • H01H85/0411—Miniature fuses
    • H01H2085/0414—Surface mounted fuses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H85/00—Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive
    • H01H85/02—Details
    • H01H85/04—Fuses, i.e. expendable parts of the protective device, e.g. cartridges
    • H01H85/041—Fuses, i.e. expendable parts of the protective device, e.g. cartridges characterised by the type
    • H01H85/046—Fuses formed as printed circuits

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  • Fuses (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a chip fuse and a manufacturing method thereof, with temperature rise restrained in the steady state in a high-rated current region, with blow-out characteristics of a delayed type, and yet with a high yield ratio. <P>SOLUTION: A heat storage layer 12 is formed on an insulating substrate 11, and a fuse film 13 is formed on the heat storage layer 12 so as not to contact the insulating substrate 11. The fuse film 13 has a fuse element part 13b between surface electrode parts 13a arranged at either end, and a protective layer 15 made of a material with a higher conductivity than the heat storage layer 12 is provided between the both surface electrode parts 13a to coat the fuse element part 13b. As the heat storage layer 12 is formed in a size not covering a whole region 11a where the fuse element part 13b is formed, the protective layer 15 comes in partial contact with the insulating substrate. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、チップヒューズ及びその製造方法に関し、さらに詳細には、高定格電流域における溶断特性が遅延タイプのチップヒューズ及びその製造方法に関する。   The present invention relates to a chip fuse and a manufacturing method thereof, and more particularly, to a chip fuse having a fusing characteristic in a high rated current region and a manufacturing method thereof.

チップヒューズに関して既に開示されている技術を挙げるとすれば、本出願人による特許文献１に記載されたものがある。これは、絶縁基板上に接着層を介してヒューズ膜を設け、接着層におけるヒューズ膜の溶断部が重なる箇所に切欠き部が形成され、この切欠き部にシリコーン樹脂が充填され、この切欠き部はヒューズ膜の溶断部よりも大きく、ヒューズ膜を覆う保護層にエポキシ樹脂が使用されている。このような構造のチップヒューズは耐パルス性能には優れているが、切欠き部の構造が複雑であり製造工程が煩雑になり、歩留が低下するという問題がある。   If the technique already disclosed regarding the chip fuse is given, there is one described in Patent Document 1 by the present applicant. This is because a fuse film is provided on an insulating substrate via an adhesive layer, a notch is formed at a location where the fused portion of the fuse film in the adhesive layer overlaps, and this notch is filled with silicone resin. The part is larger than the fused part of the fuse film, and an epoxy resin is used for the protective layer covering the fuse film. Although the chip fuse having such a structure is excellent in pulse resistance, there is a problem that the structure of the notch is complicated, the manufacturing process becomes complicated, and the yield decreases.

他のチップヒューズに関する技術としては、特許文献２に、無機質の基板の一面に熱伝導性の低いシリコーン膜を形成し、このシリコーン膜の上にヒューズ素子を形成したチップヒューズが記載されている。また特許文献３には、絶縁性基板の上面に下地ガラス層を形成し、この下地ガラス層の上にヒューズエレメントを設けたチップヒューズが記載されている。これら特許文献２及び３は、いずれも、熱伝導率を低くして熱を蓄えて速断性を向上させようとするものである。   As a technique relating to another chip fuse, Patent Document 2 describes a chip fuse in which a silicone film having low thermal conductivity is formed on one surface of an inorganic substrate and a fuse element is formed on the silicone film. Patent Document 3 describes a chip fuse in which a base glass layer is formed on the upper surface of an insulating substrate and a fuse element is provided on the base glass layer. These Patent Documents 2 and 3 both try to improve heat-fastness by reducing heat conductivity and storing heat.

さらに、特許文献４には、絶縁層が絶縁性高分子中に高熱伝導性の無機物質を分散した組成物からなるヒューズ抵抗器が記載されている。これは、熱伝導率を高くして熱を放散させるものである。   Furthermore, Patent Document 4 describes a fuse resistor in which an insulating layer is made of a composition in which an inorganic substance having high thermal conductivity is dispersed in an insulating polymer. This increases heat conductivity and dissipates heat.

チップヒューズに関し、上述のような技術が既に開示されている一方で、需要者の更なる要望として、高定格電流域における溶断特性が遅延タイプのチップヒューズがあるが、特許文献１乃至４に記載された技術では、これに応えることができない。
特開２００４−３１９１６８号公報 特開平１１−９６８８６号公報 特開２００４−３１９１９５号公報 特開平７−１５３３６７号公報 Regarding the chip fuse, the technology as described above has already been disclosed. On the other hand, as a further demand from the consumer, there is a chip fuse having a fusing characteristic in the high rated current region and a delay type. This technology cannot meet this demand.
JP 2004-319168 A JP-A-11-96886 JP 2004-319195 A JP-A-7-153367

本発明は、上記課題を解決するものであり、その目的は、高定格電流域における定常時の保護膜最上層の表面温度の上昇が７５℃以下に抑制されて溶断特性が遅延タイプであり、しかも、比較的簡易な工程により製造することができるため歩留が良いチップヒューズ及びその製造方法を提供するものである。   The present invention solves the above-mentioned problem, and the purpose thereof is a delay type in which the increase in the surface temperature of the uppermost protective film in a steady state in a high rated current region is suppressed to 75 ° C. or less, and the fusing characteristics are delayed. In addition, the present invention provides a chip fuse having a high yield because it can be manufactured by a relatively simple process, and a manufacturing method thereof.

本発明では、以下に記載する（１）乃至（４）の手段により、上記課題が解決される。   In the present invention, the above problems are solved by means (1) to (4) described below.

（１）本発明では、絶縁基板上に蓄熱層が形成され、蓄熱層の上には絶縁基板に接触しないようにヒューズ膜が形成され、当該ヒューズ膜は両端に配置される表電極部の間にヒューズ要素部を有し、前記蓄熱層よりも熱伝導性が高い材料からなる保護層が両表電極部間に設けられて前記ヒューズ要素部を被覆し、前記蓄熱層が、ヒューズ要素部の形成される領域の全てを覆わない大きさに形成されることにより、前記保護層が部分的に絶縁基板に接触するものであるチップヒューズが提供される。   (1) In the present invention, a heat storage layer is formed on an insulating substrate, a fuse film is formed on the heat storage layer so as not to contact the insulating substrate, and the fuse film is between front electrode portions arranged at both ends. A protective layer made of a material having higher thermal conductivity than the heat storage layer is provided between both surface electrode portions to cover the fuse element portion, and the heat storage layer is formed on the fuse element portion. A chip fuse is provided in which the protective layer is partially in contact with the insulating substrate by being formed in a size that does not cover the entire region to be formed.

（２）前記蓄熱層は、エポキシ樹脂、シリコーン樹脂、ポリイミド樹脂等の樹脂材料を主成分とする膜からなり、前記保護層は、フィラーとして無機物を含む樹脂材料からなることを特徴とする前記（１）に記載のチップヒューズ。   (2) The heat storage layer is made of a film mainly composed of a resin material such as an epoxy resin, a silicone resin, or a polyimide resin, and the protective layer is made of a resin material containing an inorganic substance as a filler. The chip fuse as described in 1).

（３）絶縁基板上に蓄熱層が形成され、蓄熱層の上にヒューズ膜が形成され、ヒューズ膜は両端に配置される表電極部の間にヒューズ要素部を有し、ヒューズ要素部が保護層により被覆されるチップヒューズの製造方法であって、集合絶縁基板上においてヒューズ要素部の形成される領域の全てを覆わない大きさに蓄熱層を形成する工程と、絶縁基板に接触しないように蓄熱層の上にヒューズ膜を形成するとともに、表電極部の間にヒューズ要素部を形成する工程と、前記蓄熱層よりも熱伝導性が高い材料からなる保護層を両表電極部間に設けてヒューズ要素部を被覆する工程とを含むことを特徴とするチップヒューズの製造方法。   (3) A heat storage layer is formed on the insulating substrate, a fuse film is formed on the heat storage layer, and the fuse film has a fuse element portion between front electrode portions arranged at both ends, and the fuse element portion is protected A method of manufacturing a chip fuse covered with a layer, the step of forming a heat storage layer in a size that does not cover the entire area where the fuse element portion is formed on the collective insulating substrate, and the contact with the insulating substrate Forming a fuse film on the heat storage layer, forming a fuse element portion between the surface electrode portions, and providing a protective layer made of a material having higher thermal conductivity than the heat storage layer between the surface electrode portions And a step of covering the fuse element portion.

（４）前記蓄熱層を形成する工程において、感光基を有する樹脂材料を主成分とするシート材料を集合絶縁基板上に貼り付け、当該シート材料にフォトマスクを介して露光した後に、当該シート材料の所定部を除去して残された部位から蓄熱層を形成することを特徴とする前記（３）に記載のチップヒューズの製造方法。   (4) In the step of forming the heat storage layer, a sheet material mainly composed of a resin material having a photosensitive group is attached on a collective insulating substrate, and the sheet material is exposed through a photomask, and then the sheet material. The method for manufacturing a chip fuse as described in (3) above, wherein a heat storage layer is formed from a portion left after the predetermined portion is removed.

本発明では、ヒューズ膜が絶縁基板に接触しないように蓄熱層の上に形成され、蓄熱層は、ヒューズ要素部が形成される絶縁基板上の全ての領域を覆わない大きさに形成され、ヒューズ要素部を被覆する保護層が部分的に絶縁基板に接触し、保護層は蓄熱層よりも熱伝導性が高い材料から形成される。
したがって、チップヒューズに通電してヒューズ要素部の温度が上昇すると、その熱は下方に伝わり蓄熱層に蓄えられる一方で、上方に伝わった熱は保護層を介して絶縁基板から放熱され、これにより、発熱量が比較的大きくなる高定格電流域において、温度上昇を抑制することができ、且つ、ヒューズ要素部の溶断を遅延させることが可能になる。
また本発明では、蓄熱層、ヒューズ膜及び保護層の何れの層も、特許文献１の切欠き部のように製造工程を煩雑にする構成を必要とせず、感光基を有する樹脂材料を主成分とするシート材料を絶縁基板上に貼り付け、シート材料にフォトマスクを介して露光した後に、シート材料の所定部を除去して蓄熱層を形成するので、蓄熱層の配置や平面形状の寸法精度が向上する。また蓄熱層の材料として使用する、樹脂材料を主成分とするシート材料は、その厚さが均一性に富むものであるため、蓄熱層の厚さの寸法精度も向上する。
以上のように、蓄熱層の厚さ、形状及び配置の寸法精度が向上することにより、チップヒューズの製造時における良好な歩留が可能になる。 In the present invention, the fuse film is formed on the heat storage layer so as not to contact the insulating substrate, and the heat storage layer is formed in a size that does not cover all regions on the insulating substrate on which the fuse element portion is formed. The protective layer covering the element part partially contacts the insulating substrate, and the protective layer is formed of a material having higher thermal conductivity than the heat storage layer.
Therefore, when the chip fuse is energized and the temperature of the fuse element rises, the heat is transferred downward and stored in the heat storage layer, while the heat transferred upward is dissipated from the insulating substrate via the protective layer. In the high rated current region where the heat generation amount is relatively large, the temperature rise can be suppressed, and the fusing of the fuse element portion can be delayed.
In the present invention, the heat storage layer, the fuse film, and the protective layer do not require a configuration that complicates the manufacturing process as in the cutout portion of Patent Document 1, and the resin material having a photosensitive group as a main component. After the sheet material is pasted on an insulating substrate and exposed to the sheet material through a photomask, a predetermined part of the sheet material is removed to form a heat storage layer. Will improve. Further, since the sheet material mainly composed of a resin material used as the material for the heat storage layer has a uniform thickness, the dimensional accuracy of the thickness of the heat storage layer is also improved.
As described above, the thickness, shape, and dimensional accuracy of the arrangement of the heat storage layer are improved, so that a good yield can be obtained at the time of manufacturing the chip fuse.

以下、図面を参照して本発明の実施の形態について説明するが、本発明はこれに限定されるものではない。
図１（ａ）〜（ｆ）は本発明のチップヒューズ１０を製造する工程を示した平面図であり、図２は図１（ｆ）のＡ−Ａ線におけるチップヒューズ１０の断面図である。
チップヒューズ１０は、絶縁基板１１の上に蓄熱層１２が形成され、蓄熱層１２の上にヒューズ膜１３が設けられ、ヒューズ膜１３は、両端に配置された表電極部１３ａと、これら両端の表電極部１３ａを接続するヒューズ要素部１３ｂとを有し、ヒューズ要素部１３ｂの上にはＮｉとＳｎめっき膜またはＳｎめっき膜が形成され、このめっき膜が溶断部１４となる。さらに、ヒューズ要素部１３ｂの上には、蓄熱層１２よりも熱伝導性が高い材料からなる第一の保護層１５が設けられ、第一の保護層１５の上に第二の保護層１６が形成され、絶縁基板１１の裏側の両端に裏電極１７が設けられ、絶縁基板１１の両端面に端面電極１８が設けられ、電極めっき膜１９が表電極１３ａ、端面電極１８及び裏電極１７を覆うように設けられる。 Hereinafter, embodiments of the present invention will be described with reference to the drawings, but the present invention is not limited thereto.
FIGS. 1A to 1F are plan views showing steps of manufacturing the chip fuse 10 of the present invention, and FIG. 2 is a cross-sectional view of the chip fuse 10 taken along the line AA in FIG. .
In the chip fuse 10, a heat storage layer 12 is formed on an insulating substrate 11, a fuse film 13 is provided on the heat storage layer 12, and the fuse film 13 includes surface electrode portions 13a disposed at both ends, The fuse element portion 13b is connected to the surface electrode portion 13a. Ni and a Sn plating film or a Sn plating film are formed on the fuse element portion 13b, and the plating film becomes the fusing portion. Furthermore, a first protective layer 15 made of a material having higher thermal conductivity than the heat storage layer 12 is provided on the fuse element portion 13b, and a second protective layer 16 is provided on the first protective layer 15. The back electrode 17 is provided on both ends of the back side of the insulating substrate 11, the end surface electrode 18 is provided on both end surfaces of the insulating substrate 11, and the electrode plating film 19 covers the front electrode 13 a, the end surface electrode 18, and the back electrode 17. It is provided as follows.

ここで、蓄熱層１２はエポキシ樹脂、シリコーン樹脂、ポリイミド樹脂等の樹脂材料を主成分とする膜から形成することが可能であり、第一の保護層１５は、例えば、珪酸アルミを含有するエポキシ樹脂のように、フィラーとして無機物を含む樹脂材料から形成することができる。以上のような構成により、例えば、蓄熱層１２は熱伝導率をほぼ０.０５Ｗ／ｍ℃程度とし、第一の保護層１５は、蓄熱層１２よりも高いほぼ０.１Ｗ／ｍ℃程度の熱伝導率にすることができる。   Here, the heat storage layer 12 can be formed from a film whose main component is a resin material such as an epoxy resin, a silicone resin, or a polyimide resin, and the first protective layer 15 is, for example, an epoxy containing aluminum silicate. Like resin, it can form from the resin material containing an inorganic substance as a filler. With the above configuration, for example, the heat storage layer 12 has a thermal conductivity of about 0.05 W / m ° C., and the first protective layer 15 has a temperature of about 0.1 W / m ° C. higher than the heat storage layer 12. Thermal conductivity can be achieved.

ヒューズ要素部１３ｂは、図１（ｂ）に示したように、両端の表電極部１３ａを接続するように比較的狭い幅で形成され、蓄熱層１２は、ヒューズ膜１３が絶縁基板１１に接触しないように、ヒューズ膜１３よりも若干大きく、ほぼ同じ形状に形成されるか、または同じ大きさで同じ形状に形成される。
このように蓄熱層１２とヒューズ膜１３が重ね合わされることにより、絶縁基板１１における両端の表電極部１３ａで挟まれた領域１１ａ（ヒューズ要素部の形成される領域）には、蓄熱層１２とヒューズ膜１３の何れによっても覆われていない面が生じ、この面上を、図１（ｄ）のように第一の保護層１５で被覆することで、第一の保護層１５はヒューズ要素部１３ｂと絶縁基板１１の両方に接触するものとなる。 As shown in FIG. 1B, the fuse element portion 13b is formed with a relatively narrow width so as to connect the front electrode portions 13a at both ends, and the heat storage layer 12 has the fuse film 13 in contact with the insulating substrate 11. In order to avoid this, it is slightly larger than the fuse film 13 and is formed in substantially the same shape, or formed in the same shape with the same size.
In this manner, the heat storage layer 12 and the fuse film 13 are overlapped, so that the region 11a (the region where the fuse element portion is formed) sandwiched between the front electrode portions 13a at both ends of the insulating substrate 11 A surface that is not covered by any of the fuse films 13 is generated, and the first protective layer 15 is covered with the first protective layer 15 as shown in FIG. 13b and the insulating substrate 11 are in contact with each other.

以上のような構成により、チップヒューズ１０が通電されてヒューズ要素部１３ｂに熱が発生すると、その熱は下方に伝わり蓄熱層１２に蓄えられる一方で、上方に伝わった熱は第一の保護層１５を介して絶縁基板１１から放熱され、これにより、高定格電流域においても、定常時の温度上昇を抑制することができ、且つ、ヒューズ要素部１３ｂの溶断を遅延させることが可能になる。   With the above configuration, when the chip fuse 10 is energized and heat is generated in the fuse element portion 13b, the heat is transferred downward and stored in the heat storage layer 12, while the heat transferred upward is the first protective layer. The heat is dissipated from the insulating substrate 11 through 15, so that the temperature rise in the steady state can be suppressed even in the high rated current region, and the fusing of the fuse element portion 13b can be delayed.

次に、チップヒューズ１０の製造方法について、図１及び図２を参照して説明する。
チップヒューズを製造するための集合絶縁基板としては、例えば、アルミナの純度が９６％程度のアルミナ基板を使用することができる。この集合絶縁基板上に複数層にわたり各構成が形成されるとともに、縦方向、横方向に切断されることにより、チップヒューズは製造されるものであるが、図１（ａ）〜（ｆ）では、製造過程における集合絶縁基板上の一区画、すなわち、一つのチップヒューズの平面図が示される。 Next, a manufacturing method of the chip fuse 10 will be described with reference to FIGS.
As a collective insulating substrate for manufacturing a chip fuse, for example, an alumina substrate having an alumina purity of about 96% can be used. A chip fuse is manufactured by forming each component over a plurality of layers on this collective insulating substrate and cutting it in the vertical direction and the horizontal direction, but in FIGS. A plan view of one section on the collective insulating substrate in the manufacturing process, that is, one chip fuse is shown.

［集合絶縁基板の溝刻設工程］
最初に、レーザー等の手段により集合絶縁基板（図示せず）に切断用の溝（図示せず）を刻設する。集合絶縁基板には、予め切断用の溝が形成されたものもあり、その場合には、溝の刻設工程は省かれる。 [Groove-cutting process for collective insulating substrate]
First, a cutting groove (not shown) is formed on a collective insulating substrate (not shown) by means such as a laser. Some collective insulating substrates are pre-formed with a groove for cutting, in which case the step of forming the groove is omitted.

［蓄熱層の形成工程］
蓄熱層１２を形成するため、絶縁基板１１上にシート状材料を貼る。シート状材料としては、例えば、アクリル樹脂、エポキシ樹脂及び感光基を含み、厚さ３０μ程度に形成されたＢ状態のものを使用することができる。貼り付け工程を、所定温度、所定圧力で行うことにより、シート状材料は接着後に厚さ２５μ程度になる。蓄熱層１２を更に厚くする場合には、同様のシート状材料を同様の条件で貼り重ねる。
次に、シート状材料の上にフォトマスクを介して露光した後、炭酸ナトリウム溶液をスプレーにより吹き付けることにより、シート状材料は、図１（ａ）に示したような形状に形成され、絶縁基板上には蓄熱層１２で被覆されていない領域１１ａが形成される。
以上のように蓄熱層１２を形成すれば、その熱伝導率をほぼ０.０５Ｗ／ｍ℃程度にできる。また上述のように、シート状材料として感光基を含むものを使用すれば、蓄熱層１２の寸法精度が高まり、蓄熱層１２の上に形成する第一の保護膜１５と絶縁基板１１との接触面積が高精度化し、溶断特性のばらつきを低減することができる。 [Formation process of heat storage layer]
In order to form the heat storage layer 12, a sheet-like material is pasted on the insulating substrate 11. As the sheet-like material, for example, a B-state material including an acrylic resin, an epoxy resin, and a photosensitive group and having a thickness of about 30 μm can be used. By performing the affixing process at a predetermined temperature and a predetermined pressure, the sheet-like material has a thickness of about 25 μm after bonding. When the heat storage layer 12 is further thickened, the same sheet-like material is laminated under the same conditions.
Next, after exposing the sheet-like material through a photomask and spraying a sodium carbonate solution by spraying, the sheet-like material is formed into a shape as shown in FIG. A region 11a not covered with the heat storage layer 12 is formed on the top.
If the heat storage layer 12 is formed as described above, the thermal conductivity can be made approximately 0.05 W / m ° C. As described above, if a sheet-like material containing a photosensitive group is used, the dimensional accuracy of the heat storage layer 12 is increased, and the first protective film 15 formed on the heat storage layer 12 is in contact with the insulating substrate 11. The area can be made highly accurate and variations in fusing characteristics can be reduced.

［ヒューズ膜の形成工程］
蓄熱層１２を形成した絶縁基板１１上に電解銅箔を貼り付ける。この貼り付け工程は、常温よりも高い温度で所定圧力を所定時間加えることにより行われる。次に、電解銅箔の上にネガタイプのドライフィルムを貼るか、又は液状のレジストを塗布し、その上からフォトマスクを介して露光した後、電解銅箔をエッチングしてドライフィルム又は液状レジストを剥離させる。
以上のような工程により、ヒューズ膜１３が図１（ｂ）に示したように形成される。ヒューズ膜１３は蓄熱層１２よりも若干小さく、ほぼ同じ形状であり、絶縁基板１１に接触せず、絶縁基板１１上の領域１１ａは蓄熱層１２とヒューズ膜１３の何れによっても被覆されない状態で維持される。 [Fuse film formation process]
Electrolytic copper foil is affixed on the insulating substrate 11 on which the heat storage layer 12 is formed. This attaching step is performed by applying a predetermined pressure for a predetermined time at a temperature higher than room temperature. Next, a negative type dry film is applied on the electrolytic copper foil, or a liquid resist is applied and exposed through a photomask, and then the electrolytic copper foil is etched to form a dry film or a liquid resist. Remove.
Through the steps as described above, the fuse film 13 is formed as shown in FIG. The fuse film 13 is slightly smaller than the heat storage layer 12 and has substantially the same shape, does not contact the insulating substrate 11, and the region 11 a on the insulating substrate 11 is maintained without being covered by either the heat storage layer 12 or the fuse film 13. Is done.

［ヒューズ膜溶断部の形成工程］
ヒューズ要素部１３ｂのほぼ中央部には、電気めっき法により、ＮｉとＳｎめっき膜またはＳｎめっき膜を設けることで、図１（ｃ）に示したような溶断部１４を形成し、これによりヒューズ膜１３の溶断特性にＭ効果を得る。 [Process for forming fuse film melted part]
At the substantially central portion of the fuse element portion 13b, Ni and Sn plating film or Sn plating film are provided by electroplating to form the fusing portion 14 as shown in FIG. The M effect is obtained in the fusing characteristics of the film 13.

［保護層の形成工程］
絶縁基板１１上において、蓄熱層１２及びヒューズ膜１３で被覆されていない領域１１ａへの熱伝導率を高めるため、図１（ｄ）に示したように、第一の保護層１５を形成する。第一保護膜１５は、ヒューズ要素部１３ｂに生じた熱を絶縁基板１１へと伝えて放熱させるものである。
さらに詳細に説明すれば、第一の保護層１５は、熱伝導率がほぼ０.０５Ｗ／ｍ℃程度である蓄熱層１２と比較して、これよりも高いほぼ０.１Ｗ／ｍ℃程度の熱伝導率になるように、熱伝導性の高い材料から形成する。そのような材料としては、例えば、エポキシ樹脂のなかに、珪酸アルミ、窒化アルミ、アルミナ等の無機フィラーが分散された材料を挙げることができる。その材料に含まれる無機フィラーの含有率は２０％〜６０％程度が適切である。その含有率が２０％以下であれば、スクリーン印刷性が低下し、特に滲みという不具合が発生する。さらに、それを適用したチップヒューズは表面温度が７０℃以下という前記規定値より高くなる問題が発生する。また、５０％以上であってもスクリーン印刷性が低下し、特に、擦れという不具合が発生する。さらに、それを適用したチップヒューズは溶断特性が所定の目標値を満足することができない。
第一の保護層１５を形成した後、その上に感光性ソルダーレジストを設け、エポキシ系樹脂材料により、図１（ｅ）のように第二の保護層１６を形成する。 [Protective layer forming step]
On the insulating substrate 11, in order to increase the thermal conductivity to the region 11a not covered with the heat storage layer 12 and the fuse film 13, the first protective layer 15 is formed as shown in FIG. The first protective film 15 transmits heat generated in the fuse element portion 13b to the insulating substrate 11 to dissipate heat.
More specifically, the first protective layer 15 has a thermal conductivity of about 0.1 W / m ° C., which is higher than that of the heat storage layer 12 having a thermal conductivity of about 0.05 W / m ° C. It is formed from a material having high thermal conductivity so as to have thermal conductivity. Examples of such a material include a material in which an inorganic filler such as aluminum silicate, aluminum nitride, and alumina is dispersed in an epoxy resin. The content of the inorganic filler contained in the material is appropriately about 20% to 60%. If the content is 20% or less, screen printability is deteriorated, and in particular, a problem of bleeding occurs. Furthermore, the chip fuse to which it is applied has a problem that the surface temperature is higher than the specified value of 70 ° C. or less. Moreover, even if it is 50% or more, the screen printability deteriorates, and in particular, a problem of rubbing occurs. Furthermore, the chip fuse to which it is applied cannot satisfy the predetermined target value for the fusing characteristics.
After forming the first protective layer 15, a photosensitive solder resist is provided thereon, and the second protective layer 16 is formed of an epoxy resin material as shown in FIG. 1 (e).

［裏電極、端面電極等の形成工程］
第一及び第二の保護層１５，１６を形成した後に、絶縁基板１１の裏側にスクリーン印刷法で銀ペーストを塗布して焼き付け、裏電極１７を形成する。次に、集合絶縁基板を縦溝に沿って切断して短冊状の基板を形成し、この短冊状基板の長辺方向の側面に銀ペーストを塗布して焼き付けること、またはスパッタ法により、Ｃｒ膜とＮｉ膜を製膜すること
により端面電極１８を形成する。さらに、短冊状の基板を横溝に沿って切断し、一個ずつのチップとし、バレルめっき法によりダミーとともに籠に入れ、Ｃｕ膜、Ｎｉ膜及びＳｎ膜からなる電極めっき膜１９を形成すれば、図１（ｆ）に示したように、本発明のチップヒューズ１０が完成する。 [Back electrode, end face electrode formation process]
After forming the first and second protective layers 15 and 16, a silver paste is applied to the back side of the insulating substrate 11 by a screen printing method and baked to form the back electrode 17. Next, the aggregated insulating substrate is cut along the longitudinal grooves to form a strip-shaped substrate, and a silver film is applied to the side surface in the long side direction of the strip-shaped substrate and baked, or a Cr film is formed by sputtering. The end face electrode 18 is formed by forming a Ni film. Further, if the strip-shaped substrate is cut along the lateral grooves to form chips one by one and put together with a dummy by barrel plating, the electrode plating film 19 made of Cu film, Ni film and Sn film is formed. As shown in 1 (f), the chip fuse 10 of the present invention is completed.

次に、図３は、本発明による定格電流５Ａのチップヒューズと、特許文献１の発明による定格電流５Ａのチップヒューズとの溶断特性を比較したグラフである。本発明と従来例とを比較すると、本発明のチップヒューズでは、特許文献１のチップヒューズよりも、溶断時間を１０倍以上遅延させることが可能になる。   Next, FIG. 3 is a graph comparing the fusing characteristics of a chip fuse with a rated current of 5 A according to the present invention and a chip fuse with a rated current of 5 A according to the invention of Patent Document 1. Comparing the present invention with the conventional example, the chip fuse of the present invention can delay the fusing time by 10 times or more than the chip fuse of Patent Document 1.

（ａ）〜（ｆ）はチップヒューズの製造過程における集合絶縁基板上の一区画を示した平面図である。(A)-(f) is the top view which showed one division on the collective insulation board | substrate in the manufacture process of a chip fuse. 図１（ｆ）におけるＡ−Ａ線に沿って切断したときの断面図である。It is sectional drawing when cut along the AA line in FIG.1 (f). 本発明のチップヒューズと従来例の溶断特性を比較したグラフである。It is the graph which compared the fusing characteristic of the chip fuse of this invention, and a prior art example.

符号の説明Explanation of symbols

１０ 絶縁基板
１１ 絶縁基板
１２ 蓄熱層
１３ ヒューズ膜
１３ａ 表電極部
１３ｂ ヒューズ要素部
１４ 溶断部
１５ 第一の保護層 DESCRIPTION OF SYMBOLS 10 Insulating board 11 Insulating board 12 Thermal storage layer 13 Fuse film 13a Surface electrode part 13b Fuse element part 14 Fusing part 15 1st protective layer

Claims (4)

絶縁基板上に蓄熱層が形成され、蓄熱層の上には絶縁基板に接触しないようにヒューズ膜が形成され、当該ヒューズ膜は両端に配置される表電極部の間にヒューズ要素部を有し、
前記蓄熱層よりも熱伝導性が高い材料からなる保護層が両表電極部間に設けられて前記ヒューズ要素部を被覆し、前記蓄熱層が、ヒューズ要素部の形成される領域の全てを覆わない大きさに形成されることにより、前記保護層が部分的に絶縁基板に接触するものであるチップヒューズ。 A heat storage layer is formed on the insulating substrate, a fuse film is formed on the heat storage layer so as not to contact the insulating substrate, and the fuse film has a fuse element portion between front electrode portions arranged at both ends. ,
A protective layer made of a material having higher thermal conductivity than the heat storage layer is provided between both surface electrode portions to cover the fuse element portion, and the heat storage layer covers all the region where the fuse element portion is formed. A chip fuse in which the protective layer is partially in contact with the insulating substrate by being formed to a size that is not. 前記蓄熱層は、エポキシ樹脂、シリコーン樹脂、ポリイミド樹脂等の樹脂材料を主成分とする膜からなり、前記保護層は、フィラーとして無機物を含む樹脂材料からなることを特徴とする請求項１に記載のチップヒューズ。   The said heat storage layer consists of a film | membrane which has resin materials, such as an epoxy resin, a silicone resin, and a polyimide resin, as a main component, and the said protective layer consists of a resin material containing an inorganic substance as a filler. Chip fuse. 絶縁基板上に蓄熱層が形成され、蓄熱層の上にヒューズ膜が形成され、ヒューズ膜は両端に配置される表電極部の間にヒューズ要素部を有し、ヒューズ要素部が保護層により被覆されるチップヒューズの製造方法であって、
集合絶縁基板上においてヒューズ要素部の形成される領域の全てを覆わない大きさに蓄熱層を形成する工程と、絶縁基板に接触しないように蓄熱層の上にヒューズ膜を形成するとともに、表電極部の間にヒューズ要素部を形成する工程と、前記蓄熱層よりも熱伝導性が高い材料からなる保護層を両表電極部間に設けてヒューズ要素部を被覆する工程とを含むことを特徴とするチップヒューズの製造方法。 A heat storage layer is formed on the insulating substrate, a fuse film is formed on the heat storage layer, and the fuse film has a fuse element portion between front electrode portions arranged at both ends, and the fuse element portion is covered with a protective layer A method of manufacturing a chip fuse, comprising:
A step of forming a heat storage layer in a size that does not cover the entire region where the fuse element portion is formed on the collective insulating substrate, a fuse film is formed on the heat storage layer so as not to contact the insulating substrate, and a surface electrode A step of forming a fuse element portion between the portions, and a step of covering the fuse element portion by providing a protective layer made of a material having higher thermal conductivity than the heat storage layer between both surface electrode portions. A method for manufacturing a chip fuse. 前記蓄熱層を形成する工程において、感光基を有する樹脂材料を主成分とするシート材料を集合絶縁基板上に貼り付け、当該シート材料にフォトマスクを介して露光した後に、当該シート材料の所定部を除去して残された部位から蓄熱層を形成することを特徴とする請求項３に記載のチップヒューズの製造方法。   In the step of forming the heat storage layer, a sheet material containing a resin material having a photosensitive group as a main component is attached on a collective insulating substrate, and exposed to the sheet material through a photomask, and then a predetermined portion of the sheet material. The method of manufacturing a chip fuse according to claim 3, wherein a heat storage layer is formed from a portion left by removing the heat.
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JP4510858B2 (en) 2010-07-28
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CN101542670A (en) 2009-09-23
WO2009019903A1 (en) 2009-02-12

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