JP2009033143A - Measuring equipment mount - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To improve temperature stability of an irradiation optical system and a detection optical system while improving cleanliness of a measurement object such as a semiconductor wafer. <P>SOLUTION: A measurement device mount 1 houses the irradiation optical system 101 for irradiating a measurement object W with inspection light and a detection optical system 102 for detecting light generated from the measurement object W. The mount has a dividing mechanism which divides air flow from an air blasting mechanism 8 which sends air to an inside of the mount 1 at least into two. It also has a flow rate distribution structure 9 which applies one flow divided from the dividing mechanism to the irradiation optical system 101 and the detection optical system 102, and applies the other flow to the measurement object W from a side by raising flow rate. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a gantry, and more particularly to a gantry used in a measuring instrument for optically measuring the surface of a workpiece such as a semiconductor substrate.

  Conventionally, a semiconductor inspection apparatus such as a semiconductor wafer film thickness measurement apparatus used in a semiconductor manufacturing process includes, for example, an irradiation optical system that irradiates a semiconductor wafer placed on a sample stage with inspection light, as shown in Patent Document 1, A detection optical system for detecting light from the semiconductor wafer, a measuring instrument base for housing them, and a clean fan provided on the top of the base are provided.

  However, the conventional measuring instrument base is made to flow downward from the top of the base only for the purpose of improving the cleanliness of the semiconductor wafer, and the temperature stability of the irradiation optical system and the detection optical system is taken into consideration. Absent. In other words, in a semiconductor measurement apparatus that requires micron-order measurement accuracy, the temperature effect of the optical system due to a temperature change in an installation environment such as a clean room is not considered.

Further, in the configuration in which air is allowed to flow downward from the top of the gantry, the gas flow from the clean fan hits the irradiation optical system and the detection optical system before hitting the semiconductor wafer. As a result, there is a problem that a sufficient gas flow does not strike the semiconductor wafer. Further, there is a problem that the gas flow impinges on the semiconductor wafer irregularly and the semiconductor wafer cannot be sufficiently cleaned.
JP 2002-045771 A

  Therefore, the present invention has been made to solve the above problems all at once, and improves the cleanliness of a measurement object such as a semiconductor wafer and improves the temperature stability of an irradiation optical system and a detection optical system. Is the main intended issue.

  That is, the measurement instrument base according to the present invention is a measurement apparatus base that houses a measurement instrument for measuring an object to be measured, and the gas flow from the air blowing mechanism that blows air into the base is divided into at least two. The first flow path for applying one flow divided by the flow dividing mechanism to the stage on which the measuring device or the measurement object is placed, and increasing the flow velocity of the other flow, the measurement It is characterized by having a flow distribution structure having a second flow path for hitting an object.

  In such a case, the gas flow from the blower mechanism is divided into a gas flow for cleaning the measurement object (one flow) and a gas flow for adjusting the temperature of the irradiation optical system and the detection optical system (the other flow). ) And air can be blown to the measurement object, the irradiation optical system, and the detection optical system, respectively. Therefore, the cleanliness of the inside of the gantry and the measurement object can be improved, and the temperature stability of the irradiation optical system and the detection optical system can be improved. Further, since the gas flow for cleaning the measurement object is applied at least once in the second flow path by increasing the flow velocity, the gas flow can be sufficiently applied compared to the case where the flow velocity is not increased. It is possible to reliably improve the cleanliness of the measurement object.

  As a specific embodiment of the flow distribution structure, the flow distribution structure is provided between the blower mechanism and the measuring device, and an introduction port for introducing a gas flow from the blower mechanism, and the introduction port A flow dividing plate that bisects the gas flow introduced by the first flow path, and the first flow path flows so that one flow divided by the flow dividing plate is applied to the measuring instrument from above, An example is one in which the two flow paths flow the other flow divided by the flow dividing plate so that the flow velocity is increased and applied to the measurement object from the side.

  The gas flow from the outside of the measurement device base flows into the measurement device base through the port where the measurement target is carried in and out, and the air inside the measurement device base and the cleanliness of the measurement target are impaired. To prevent the gas flow from the outside of the measurement device pedestal is provided with an inflow prevention mechanism for preventing the gas flow from flowing into the measurement device pedestal through the port where the measurement object is carried in and out. Good.

  In order to prevent a gas flow from the outside from flowing into the measurement apparatus stand with a simple configuration, the inflow prevention mechanism faces one end opening of the suction flow path formed in a negative pressure near the port. As long as it is arranged. If this is the case, the flow of the gas flow flowing from the outside toward the port can be bent before the port and sucked into the suction flow path, and the gas flow is measured through the port. It is possible to prevent inflow from the outside to the inside of the gantry. Here, the vicinity means that the gas flow from the outside does not flow into the frame for the measuring device, or even if it flows, the suction flow path from the outside is not affected in a small amount. The position where the gas flow can be sucked.

  In order to efficiently and surely apply a gas flow to the surface of the measurement object and to further improve the cleanliness of the measurement object, the second flow path is provided between the flow distribution structure and the measurement object. It is desirable to further include a flow direction control mechanism that is provided downstream of the outlet of the gas flow path and controls the flow of the gas flow from the second flow path in a direction toward the measurement object.

  In order to improve the cleanliness of the measurement object, the gas flow can be efficiently and reliably applied to the surface of the measurement object even when there is an error in the design change or the design. It is only necessary that the direction control mechanism can change the direction of the flow of the gas flow toward the measurement object.

  Even if there is a design change or an error in the design, the gas flow can be properly distributed to improve the cleanliness of the gantry and measurement object, and the temperature stability of the irradiation optical system and detection optical system In order to improve the flow rate, it is sufficient that the flow rate distribution structure can change the ratio of the gas flow flowing into the first flow path and the second flow path.

  In order to be able to change the ratio of the gas flow flowing into the first flow path and the second flow path with a simple configuration, it is only necessary that the mounting position of the flow dividing plate with respect to the introduction port can be changed.

  According to the present invention configured as described above, the cleanliness of a measurement object such as a semiconductor wafer can be improved and the temperature stability of the irradiation optical system and the detection optical system can be improved.

  An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a perspective view of the measurement instrument mount 1 according to the present embodiment. 2 is a perspective view showing a state in which the double wall structure 4B on the front surface of the gantry 1 is removed. FIG. 3 is a rear perspective view mainly showing the frame 3. FIG. 4 is mainly showing the frame. 3 is a perspective view showing a state in which an interior panel 4A1 is attached to FIG. FIG. 5 is a schematic cross-sectional view of the gantry 1 showing the gas flow from the blower mechanism 8. FIG. 6 is a cross-sectional view showing the frame 3 and the double wall structure 4. FIG. 7 is a front perspective view of the panel member 6, and FIG. 8 is a rear perspective view of the panel member 6. FIG. 9 is a cross-sectional view of the panel member 6, and FIG. 10 is an exploded view of the panel member 6.

  <Device configuration>

  The measuring instrument base 1 according to the present embodiment is used in a semiconductor inspection apparatus that inspects the surface thickness of a semiconductor wafer W that is a measurement target, foreign matter, presence of defects, and the like.

  As shown in FIGS. 1 to 6, the basic configuration of the measurement instrument base is such that the irradiation optical system 101, the detection optical system 102, the sample stage 103, and the like are placed on the base 2. A frame body 3 in which the optical systems 101, 102, etc. are disposed; and provided in the frame body 3, surrounding at least the sides of the irradiation optical system 101 and the detection optical system 102; A double wall structure 4 having an air layer.

  Each part 2-4 is demonstrated below.

  The irradiation optical system 101 irradiates the semiconductor wafer W with laser light as inspection light obliquely from above, and includes a laser light source, an optical fiber, a lens, and the like.

  The detection optical system 102 detects reflected light and / or scattered light from the semiconductor wafer W irradiated with inspection light, and includes a photodetector and a lens.

  The irradiation optical system 101 and the detection optical system 102 are fixed to a common base member 21 so as to have a predetermined positional relationship (relative position is a predetermined relationship). The base member 21 is fixed on the base 2. A measuring instrument is constituted by the irradiation optical system 101, the detection optical system 102 and the base member 21.

  The sample stage 103 has a semiconductor wafer W mounted thereon and moves the semiconductor wafer W in the XYZ directions, and includes an XY stage portion that moves in the XY directions and a Z stage portion that moves in the Z direction. Yes. One stage that moves in the XYZ directions may be used, or a stage that moves in the X, Y, and Z directions may be combined.

  As shown in FIGS. 2 and 3, the frame body 3 is provided with a main frame body 31 configured in a rectangular parallelepiped shape and the main frame body 31, and at least front, rear, left and right openings of the main frame body 31. A plurality of sub-frames 32 partitioned into a plurality of sub-frames.

  The main frame 31 is fixed to the base end portion of the base 2, and has a rectangular lower frame 311, four support columns 312 erected on the four upper surfaces of the lower frame 311, and the support frame 312. And an upper frame 313 having a rectangular shape formed horizontally on the upper end portion.

  The sub-frame 32 is horizontally mounted on the column 312 adjacent to the main frame 31, and the horizontal beam 321 that divides the opening of the main frame 31 vertically, and the lower frame 311 or the upper frame 311 of the main frame 31 and the upper frame 31. A vertical beam 322 connected to a frame 313. Thereby, the opening part formed in each surface of the main frame 31 is divided into a substantially lattice shape.

  On the right side of the frame 3 toward the maintenance surface of the irradiation optical system 101 and the detection optical system 102, an operation unit 5 for operating the irradiation optical system 101 and the detection optical system 102 is incorporated.

  The left side surface of the frame 3 toward the maintenance surface of the irradiation optical system 101 and the detection optical system 102 is divided into three by the sub-frame 32 (see FIG. 3).

  On the maintenance surface of the irradiation optical system 101 and the detection optical system 102 in the frame 3, an opening (hereinafter referred to as a maintenance opening 3 </ b> A) in which almost all of the irradiation optical system 101 and the detection optical system 102 can be viewed from the front is formed. (See FIG. 2). Specifically, the maintenance opening 3 </ b> A is formed of an upper frame 313, a column 312, a horizontal beam 321, and a vertical beam 322.

  Here, the maintenance surface in the present embodiment is a surface on which an opening to the inside of the gantry at the time of maintenance is provided. In FIG. 2, it is a surface that faces at least the adjustment part RS of the irradiation optical system 101 and the detection optical system 102 that are measuring instruments. In this embodiment, the frame 3 is opposite to the back surface on which a port P described later is provided. It is the front of the side. In addition, when there are a plurality of surfaces facing the adjustment site RS, any one may be used as a maintenance surface.

  The double wall structure 4 is provided in the frame 3 so as to surround at least the sides of the irradiation optical system 101 and the detection optical system 102. That is, the side of the irradiation optical system 101 and the detection optical system 102 which are measuring instruments is enclosed except for portions other than the double wall such as a port P and a window which will be described later. The double wall structure 4 is provided on the left side and the back side of the irradiation optical system 101 and the detection optical system 102, and on the front (maintenance surface) of the irradiation optical system 101 and the detection optical system 102. The structure differs from the double wall structure 4B.

  The double wall structure 4A provided on the left side and the back side of the irradiation optical system 101 and the detection optical system 102 includes an interior panel 4A1 and an exterior panel 4A2. The interior panel 4A1 and the exterior panel 4A2 are independently attached to the frame 3. As shown in FIG. 6, a double wall structure 4A is formed between a space where the irradiation optical system 101 and the detection optical system 102 are located and a space where the operation unit 5 (electric system) is located. The temperature effect received from the operation unit 5 (electric system) can be reduced as much as possible, as well as the external temperature effect.

  As shown in FIGS. 4 and 6, the interior panel 4 </ b> A <b> 1 has a rectangular shape provided to face the irradiation optical system 101 and the detection optical system 102, and includes an upper frame 313, a column 312, and a horizontal beam 3. 321, the vertical beam 322, or the lower frame 311 is fixed to the inner surface forming the opening of the frame 3 with screws or the like.

  Therefore, on the four sides of the interior panel 4A1, mounting portions 4A11 for mounting and fixing to the upper frame 313, the support column 312, the horizontal beam 321, the vertical frame or the lower frame 311 are provided upright over almost the entire side. (See the enlarged view of FIG. 6). In FIG. 4, only a part of the mounting portion of the interior panel 4 </ b> A <b> 1 at the upper right in the drawing is given a reference numeral.

  Then, the mounting portion 4A11 is fitted into a plurality of openings formed in the frame 3, and the mounting portion 4A11 is attached to the frame 3 (each member forming the frame 3 (upper frame 313, support column 312, horizontal beam 321, vertical frame or lower frame 311). )) With screws.

  As shown in FIGS. 4 and 6, the interior panel 4A1 such as the upper stage on the back and left and right side surfaces of the irradiation optical system 101 and the detection optical system 102 has a plurality of fixing portions 4A3 for fixing the exterior panel 4A2 with screws. Is provided. The fixed portion 4A3 has a substantially gate shape in cross section, and is provided on the interior panel 4A1 at equal intervals in the vertical direction. In FIG. 4, only a part of the fixing portion 4A3 of the interior panel 4A1 on the upper right in the drawing is given a reference numeral.

  The exterior panel 4A2 forms an air layer between the interior panel 4A1 and forms a rectangular shape that forms the double wall structure 4A in relation to the interior panel 4A1.

  The exterior panel 4 </ b> A <b> 2 includes one fixed to a fixing portion 4 </ b> A <b> 3 provided on the interior panel 4 </ b> A <b> 1 and one fixed to the frame body 3.

  The exterior panel 4 </ b> A <b> 2 fixed to the frame body 3 is attached to an attachment auxiliary tool 33 attached to the inner surface of the frame body 3. The attachment assisting tool 33 is substantially L-shaped in a side view. Further, the exterior panel 4A2 is provided with a handle for facilitating the attaching / detaching operation to the frame 3.

  As shown in FIGS. 4 and 5, a semiconductor wafer W transferred by a semiconductor wafer transfer device (not shown) is placed on the double wall structure 4A provided on the back surface of the irradiation optical system 101 and the detection optical system 102. A port P for carrying in / out is provided.

  The front (maintenance surface) of the irradiation optical system 101 and the detection optical system 102, specifically, the double wall structure 4 </ b> B provided in the maintenance opening 3 </ b> A of the frame 3 can be attached to and detached from the frame 3. It consists of an integral panel member 6. Here, the integral type has a double wall structure 4B composed of an inner wall and an outer wall, and can be attached to and detached from the frame 3 at the same time.

  As shown in FIGS. 7 and 8, the panel member 6 has a rectangular shape, and air is interposed between the inner surface plate 61 facing the irradiation optical system 101 and the detection optical system 102, and the inner surface plate 61. And an outer plate 62 forming a layer. The panel member 6 has a structure thinner than the double wall structure 4A provided except for the maintenance surface. That is, the panel member 6 has a structure that is thinner than the thickness of each member (the upper frame 313, the column 312, the horizontal beam 321, and the vertical frame 322) that forms the frame 3. Thereby, when the panel member 6 is attached to the frame 3, the panel member 6 does not protrude into the gantry 1, and the gas flow flowing inside the gantry 1 is not disturbed.

  As shown in FIG. 8, the inner surface plate 61 is formed by a rectangular flat plate portion 611 and side wall portions 612 erected on four sides of the flat plate portion 611, and has a box shape with an open upper surface. .

  As shown in FIG. 8, a plurality of fixing pieces 63 for fixing the outer surface plate 62 are provided at equal intervals on the surface (inner surface) 611a of the flat plate portion 611 of the inner surface plate 61 facing the outer surface plate 62. ing. The fixed piece 63 has a substantially gate shape in cross section and is welded to the inner surface plate 61. Further, the contact surface 63 a of the fixed piece 63 is formed so as to contact the inner surface 621 a of the outer surface plate 62 in a state where the inner surface plate 61 and the outer surface plate 62 are overlapped. The contact surface 63a is formed with a through hole for fixing the outer plate 62 with screws.

  As shown in FIGS. 8 and 9, the outer surface plate 62 has a box shape having an opening wider than one opening of the inner surface plate 61, and includes a rectangular flat plate portion 621 and four pieces of the flat plate portion 621. These are formed into a box shape having an open top surface formed by a side wall portion 622 erected and an upper wall portion 623 extending inward from the tip end portion of the side wall portion 622.

  Further, a handle 64 is provided at the center of the surface (outer surface) 621b opposite to the surface 621a facing the inner surface plate 61 of the flat plate portion 621 of the outer surface plate 62 for facilitating the attachment / detachment operation of the panel member 6. (See FIG. 7 etc.).

  Then, as shown in FIG. 10, the opening of the inner surface plate 61 and the opening of the outer surface plate 62 are overlapped to accommodate the inner surface plate 61 inside the outer surface plate 62, and the outer surface plate 62 is attached to the fixed piece 63 of the inner surface plate 61. An integral panel member 6 is formed by screw fixing. At this time, the front end surface of the side wall portion 612 of the inner surface plate 61 and the flat plate portion inner surface 621a of the outer surface plate 62 are in contact with each other. That is, the height of the fixed piece 63 and the height from the flat plate portion 611 of the side wall portion 612 of the inner surface plate 61 are made the same.

  In addition, the measuring instrument mount 1 of the present embodiment is provided with an attaching / detaching mechanism 7 for easily attaching and removing the panel member 6 to and from the frame body 3.

  The attachment / detachment mechanism 7 is provided with a locking pin that extends upward on the cross beam 321 to which the panel member 6 is attached, and a locking hole that is provided on the lower side wall portion 622 of the outer surface plate 62 and into which the engaging pin 71 is fitted. And an engaging projection 71 provided perpendicular to the flat plate portion 621 and rotatably attached to the flat plate portion 621 on the upper portion of the flat plate portion 621 of the outer surface plate 62, and provided on the upper frame 313. And an engaging concave portion that engages with the engaging convex portion.

  The engaging convex portion 71 is mounted perpendicularly to the flat plate portion 621 of the outer surface plate 62 and includes a rotating shaft 711 that can be rotated by 90 degrees, and an engaging piece 712 that is mounted on the tip end portion of the rotating shaft 711. . Then, when the rotation shaft 711 rotates 90 degrees, the engagement piece 712 engages with the engagement recess.

  The panel member 6 can be attached / detached by simply rotating the rotating shaft 711 of the engaging convex part 71 by 90 degrees by the attaching / detaching mechanism 7 configured as described above, so that the panel member 6 can be attached / detached to / from the frame 3 very easily. It can be carried out.

  The members provided with the locking pin, the locking hole, the engaging convex portion 71, and the engaging concave portion are not limited to the above, and may be provided in reverse.

  As described above, the maintenance surface is provided with the panel member 6 on the frame 3 by an installation method different from the other surfaces.

  The attachment / detachment operation (opening / closing operation of the maintenance opening 3A) of the panel member 6 configured as described above will be described.

  The operation of attaching to the panel member 6 (operation of closing the maintenance opening 3A) will be described. First, in a state where the maintenance opening 3A is open, the handle 64 of the panel member 6 is held, and the locking hole provided in the lower side wall 621 of the outer plate 62 is fitted to the locking pin provided in the cross beam 321. To lock. Then, after the panel member 6 is brought into contact with the column 312 or the vertical beam 322, the engagement convex portion 71 provided on the outer surface plate 62 is rotated by 90 degrees to be engaged with the engagement concave portion provided on the upper frame 313. . Thereby, the panel member 6 is closely fixed to the frame 3. In addition, what is necessary is just to perform the procedure contrary to the said procedure, when opening 3A of panel member 6 maintenance openings.

  Therefore, the measurement instrument gantry 1 according to the present embodiment distributes the air flow (wind) from the air blowing mechanism 8 for blowing air into the gantry 1 as shown in FIG. The flow distribution structure 9 that blows air to the irradiation optical system 101 and the detection optical system 102 and the semiconductor wafer W is provided.

  The blower mechanism 8 is a clean fan that cleans the temperature-adjusted air from an external temperature controller (not shown) provided outside the measurement instrument base 1 and blows it out into the measurement instrument base 1. The blower mechanism 8 is provided on the upper portion of the frame 3 and blows air from top to bottom. In FIG. 5, 8a is a connection port to which a gas blower pipe from an external temperature controller is connected.

  The flow distribution structure 9 has a diversion mechanism that divides a single gas flow from one air blowing mechanism 8 into two, and irradiates one of the flows divided by the diversion mechanism with an irradiation optical system 101 and a detection optical system. The other flow is caused to flow so as to be applied to the semiconductor wafer W from the side in one direction by increasing the flow velocity. One flow divided by the flow dividing mechanism adjusts the temperature of the irradiation optical system, the detection optical system, and the base member 21, and the other flow divided by the flow dividing mechanism cleans the semiconductor wafer W. Is. Here, the side of the semiconductor wafer W refers to a direction other than the normal direction of the surface of the semiconductor wafer, that is, a direction inclined from the normal direction. More specifically, since the semiconductor wafer W of the present embodiment is placed horizontally on the sample stage 103, the side is a direction other than the vertical direction. In this way, since the flow along the surface of the semiconductor wafer W can be performed, particles on the surface of the wafer W can be easily removed.

  Specifically, as shown in FIG. 5, the flow distribution structure 9 is provided between the blower mechanism 8 and the irradiation optical system 101 and the detection optical system 102, and introduces the wind from the blower mechanism 8. And the flow dividing plate 9b as a flow dividing mechanism that divides the gas flow that has entered from the flow inlet 9a, and one flow divided by the flow dividing plate 9b as it is, the irradiation optical system 101 and the detection optical system 102. And a second flow path 9d for increasing the flow velocity of the other flow divided by the flow dividing plate 9b to the semiconductor wafer W.

  The flow dividing plate 9a is provided along the flow of the gas flow that has entered from the inlet 9a.

  The first flow path 9c has the same cross-sectional area, and has a rectangular parallelepiped shape formed by using the flow dividing plate 9b as a part of the side wall. The outlet is opened above the irradiation optical system 101 and the detection optical system 102.

  The second flow path 9d has a cross-sectional area that narrows continuously or stepwise, and has a substantially L-shaped side view formed by using the flow dividing plate 9b as a part of the side wall. Specifically, the second flow path 9d is provided along the longitudinal direction of the frame 2 and allows a gas flow to flow toward the maintenance surface. That is, the second flow path 9 d is provided along the interior panel 4 A 1 on the back surface of the base member 21, and the outlet thereof is opened obliquely above the semiconductor wafer W. Thus, since the cross-sectional area of the second channel 9d is narrowed continuously or stepwise, the flow velocity can be increased. Moreover, since it is provided along the longitudinal direction, when sending a gas flow to a transversal direction, a gas flow can be applied efficiently. For example, in the case where the gas flow is provided along the direction orthogonal to the longitudinal direction, when the gas flow is sent in the longitudinal direction, the distance from the outlet of the second flow path 9 to the semiconductor wafer W becomes long, and a sufficient gas flow is sent. There is a problem that can not be.

  Moreover, since the 2nd flow path 9d and the flow direction control board 10 are provided in addition to a maintenance surface by flowing toward a maintenance surface, it does not become a hindrance at the time of a maintenance.

  The first flow path 9c and the second flow path 9d are continuously provided in parallel via the flow dividing plate 9b, and the flow distribution structure 9 is a hollow long body that is generally L-shaped in a side view as a whole. is there.

  As shown in FIG. 5, the measuring instrument mount 1 further includes a flow direction control plate 10 that is a flow direction control mechanism that controls the flow direction of the other diversion flow from the flow distribution structure 9.

  The flow direction control plate 10 directs the flow from the second flow path 9d toward the semiconductor wafer W in order to more efficiently apply the flow from the second flow path 9d to the semiconductor wafer W. Between the distribution structure 9 and the semiconductor wafer W, it is provided downstream of the outlet of the second flow path 9d.

  More specifically, the flow direction control plate 10 is a long body having a V-shaped cross section, and one side plate of the flow direction control plate 10 is fixed to the vertical beam 322 of the frame 3 so as to have an inverted V shape. As a result, the other side plate 10 a faces both the outlet of the second flow path 9 d of the flow distribution structure 9 and the semiconductor wafer W.

  Further, the flow direction control plate 10 is variable in the height position provided in the vertical beam 322 and the angle of the other side plate 10a that changes the flow from the second flow path 9d. In this way, it is possible to adjust the gas flow, and it is possible to cope with a case where some changes are required, such as when there is an error in design.

  Further, a gap H is provided between the lower surface of the frame body 3, particularly between the lower end of the frame body 3 and the base 2. As shown in FIG. 5, the gap H includes a gap H1 that flows out the gas flow that has passed through the front surface of the base 2 and a gap H2 that flows out the gas flow that has passed through the back surface of the base 2 to the outside. is there. The gap H1 on the front surface of the base 2 is larger than the gap H2 on the back surface of the base 2. Thereby, the flow volume of the gas flow which passes the front of the base 2 can be made larger than the flow volume of the gas flow which passes the back surface of the base 2, and a gas flow can be flowed from the back of the base 2 to the front. . That is, the gas flow from the second flow path 9d can be applied to the semiconductor wafer W. The sizes of the gaps H1 and H2 can be appropriately set so as to prevent upward turbulence.

  <Effect of this embodiment>

  According to the measurement instrument base 1 according to the present embodiment configured as described above, a gas flow from one air blowing mechanism is used as a gas flow for temperature control of the irradiation optical system 101 and the detection optical system 102, and a semiconductor wafer W. The air can be blown to the irradiation optical system 101, the detection optical system 102, and the semiconductor wafer W by being divided into the cleaning gas flow. Therefore, the temperature stability of the irradiation optical system 101 and the detection optical system 102 can be improved, and the cleanliness of the gantry 3 and the semiconductor wafer W can be improved.

  Then, the gas flow for cleaning the semiconductor wafer W is applied at least once in the second flow path 9d so that the flow velocity is increased, so that the semiconductor wafer W can be sufficiently cleaned compared with the case where the flow velocity is not increased. It is possible to reliably improve the degree.

  Further, by using the flow distribution structure 9 of the present embodiment, the temperature control of the irradiation optical system 101 and the detection optical system 102 and the cleaning of the semiconductor wafer W can be performed by one blower mechanism 8 without using two or more blower mechanisms. Therefore, the cost can be reduced and the installation area in a clean room or the like can be reduced.

  Further, since the flow direction control plate 10 is provided on the downstream side of the second flow path 9d, the cleaning gas flow from the second flow path 9d can be more efficiently applied to the semiconductor wafer W, and the semiconductor wafer The cleanliness of W can be further improved.

  In addition, since the gap H is provided in the lower part of the gantry 1, it is possible to prevent upward turbulence and to prevent dust generation.

  Moreover, since the double wall structure 4 is provided in the frame, adverse effects on the temperature stability inside the apparatus base 1 due to temperature changes in the installation environment can be suppressed. As a result, it is possible to reduce measurement errors such as measurement data shifts or measurement point shifts based on temperature changes. Moreover, since the temperature stability inside the apparatus base 1 is improved, high-precision temperature control can be realized by using a simple and inexpensive air blowing mechanism 8.

  <Other modified embodiments>

  The present invention is not limited to the above embodiment. In the following description, the same reference numerals are given to members corresponding to the above-described embodiment.

  For example, in the above-described embodiment, only the maintenance opening 3 </ b> A is configured as a double wall structure by the integrated panel member 6, but the other surfaces are also doubled by using the integrated panel member 6. It may be a wall structure.

  In the above embodiment, the double wall structure is not formed on the upper surface on which the clean fan 8 is provided and the lower surface considered to hardly affect the temperature of the optical systems 101 and 102. A double wall structure may be formed. In this case, the temperature stability can be further improved.

  Further, the panel member 6 may be configured by fixing two panels with a rectangular frame sandwiched therebetween.

  In addition, in the embodiment, the flow direction control plate 10 is provided on the back surface of the base member 21 to which the irradiation optical system 101 and the detection optical system 102 are fixed, but the irradiation optical system 101 and the detection optical system 102 are provided. You may make it provide in front of. In this case, since the panel member 6 is attached to and detached from the frame 3 in front of the optical system, the flow direction control plate 10 may be provided on the panel member 6 or may be provided on the frame 3. .

  In addition, the flow distribution structure 9 may have only the second flow path 9d. That is, the flow distribution structure 9 includes an introduction port 9a for introducing a part of the gas flow from the blower mechanism 8 and a second flow path 9d connected to the introduction port 9a. Similarly to the above-described embodiment, the second flow path 9d has a cross-sectional area that narrows continuously or stepwise as it goes downstream.

  Further, the flow distribution structure 9 divides one gas flow from one blower mechanism 8 into three, and two of them are irradiated optical system 101, detection optical system 102, and semiconductor wafer W in the same manner as in the above embodiment. And the other may be applied to the base member 21.

  Further, the flow distribution structure 9 may apply one flow not to the irradiation optical system 101 and the detection optical system 102 but to the sample stage 103, or to the irradiation optical system 101, the detection optical system 102, and the like. It may be applied to all the sample stages 103.

  Further, the shape of the flow direction control plate 10 is not limited to a long body having a V-shaped cross section, and may be other shapes. Specifically, an optimum shape can be obtained according to the positional relationship between the irradiation optical system 101, the detection optical system 102, and the sample stage 103 on which the semiconductor wafer W is placed.

  The structure of the flow dividing mechanism is not limited to the flow dividing plate 9b as long as one gas flow is divided into two or more. For example, a duct (wind conduit) or the like may be used.

  The position of the flow dividing plate 9b may be changeable. That is, you may comprise so that the ratio of the gas flow which flows into the 1st flow path 9c and the 2nd flow path 9d can be changed. If this is the case, the gas flow can be adjusted, and even when a slight change is required, such as when there is an error in design, it is possible to cope with it.

  Further, the flow direction control mechanism is not limited to the flow direction control plate. For example, the duct may be formed by bending. Further, it may be integrated with the flow distribution structure, that is, communicated. The flow direction of the gas flow flowing out of the duct may be changeable. For example, if the duct is made of a flexible material so that the bent state can be fixed, the flow direction of the gas flow can be adjusted.

  In the embodiment described above, the other flow is made to flow toward the maintenance surface, but conversely, the other flow may be made to flow from the maintenance surface toward the opposite surface.

  Furthermore, in the above-described embodiment, the front surface of the frame 3 is the maintenance surface, but the maintenance surface may be a surface other than the surface (back surface) on which the port P is provided.

  The measuring instrument of the embodiment irradiates a semiconductor wafer with inspection light and detects light generated from the semiconductor wafer. In addition, for example, a scanning probe microscope (such as an atomic force microscope (AFM)) ( SPM) or the like. At this time, if a gas flow is applied during the measurement of the semiconductor wafer W, the gas flow may hit the probe (probe) and cause a measurement error.

  In addition, the measuring device mount 1 used for measuring semiconductors normally has a positive internal pressure so that no gas flows in from the outside. It is kept at positive pressure. For example, if the transfer device for carrying in and out the measurement sample provided adjacent to the measurement device gantry 1 keeps the internal pressure at a higher pressure than the inside of the measurement device gantry 1, the measurement device is connected via the port P. When the sample is carried into and out of the inside, the gas flow that has flowed out of the transport mechanism may flow into the measurement apparatus mount 1. In order to prevent such a problem, an inflow prevention mechanism that prevents a gas flow from the outside from flowing into the inside via the port P may be provided in the measurement device mount 1 of the above embodiment.

  As shown in FIG. 11, in this embodiment, as an inflow prevention mechanism, one end opening S <b> 1 of the suction flow path S formed at a negative pressure is arranged in the vicinity of the outside of the port P. The suction channel S is maintained at a negative pressure by a vacuum source (not shown).

  Next, the flow of the gas flow will be described. When the measurement object W is loaded / unloaded, the gas flow from the unloading mechanism R travels toward the port P, is bent toward the opening S1, and is sucked into the suction channel S. Therefore, it is possible to prevent the gas flow coming out of the carry-out mechanism R maintained at a positive pressure from passing through the port P, and to prevent the external gas flow from flowing into the measuring device mount 1. Can do. In this way, the cleanliness of the measurement object can be maintained, and temperature changes inside the gantry due to inflow of air from outside can be prevented.

  Note that the inflow prevention mechanism is not limited to this. For example, the internal space of a double wall may be used as a suction channel. When the one end opening S1 of the suction flow path S is disposed near the outside of the port P, it is possible to completely prevent the gas flow from the outside from flowing into the inside through the port P. Although it is the most preferable form, it may be arranged in the vicinity of the inside of the port P with the one end opening S1 of the suction flow path S facing it. Even in this case, the gas flow from the outside flows into the gantry, but the gas flow is sucked by the suction flow path S, so that the gas flow from the outside does not hit the measuring device or the measurement object. Thus, it is possible to prevent the measurement from being influenced by temperature changes and dust.

  In addition, some or all of the above-described embodiments and modified embodiments may be combined as appropriate, and the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the spirit of the present invention. .

The perspective view of the mount frame for measuring instruments which concerns on this embodiment. The perspective view which shows the state which removed the double wall structure of the gantry front in the same embodiment. The rear perspective view which mainly shows the frame in the same embodiment. The perspective view which shows the state which mainly attached the interior panel in the same embodiment. Typical sectional drawing which shows the gas flow from the ventilation mechanism in the embodiment. Sectional drawing which shows the frame and double wall structure in the embodiment. The front perspective view of the panel member in the embodiment. The rear perspective view of the panel member in the embodiment. Sectional drawing of the panel member in the embodiment. The assembly exploded view of the panel member in the embodiment. The typical sectional view of the mount for measuring instruments concerning another embodiment.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Measuring instrument base W ... Measuring object 101 ... Irradiation optical system (measuring instrument)
102 ... Detection optical system (measuring instrument)
9b ... Diversion plate (diversion mechanism)
9c ... 1st flow path 9d ... 2nd flow path 9 ... Flow distribution structure 8 ... Blower mechanism 9a ... Inlet 10 ... Flow direction control board (flow direction control mechanism)
S ... Suction channel (inflow prevention mechanism)
S1 ... Opening P ... Port

Claims (5)

A measuring device mount that houses a measuring device for measuring a measurement object,
A flow dividing mechanism that divides a gas flow from a blower mechanism that blows air into the gantry into at least two parts, and one flow divided by the flow dividing mechanism is applied to the stage on which the measuring device or the measurement object is placed. A measuring apparatus gantry comprising a flow rate distribution structure having a first flow path for the second flow path and a second flow path for increasing the flow velocity of the other flow and applying the flow to the measurement object. The flow distribution structure is
Provided between the blower mechanism and the measuring device;
An inlet for introducing a gas flow from the blower mechanism;
A flow dividing plate that bisects the gas flow introduced by the introduction port;
The first flow path flows so that one flow divided by the flow dividing plate is applied to the measuring device from above;
The measuring instrument platform according to claim 1, wherein the second flow path is configured to flow the other flow divided by the flow dividing plate so as to be applied to the measurement object from the side by increasing the flow velocity thereof.   A flow which is provided downstream of the outlet of the second flow path between the flow distribution structure and the measurement object and controls the flow of the gas flow from the second flow path in a direction toward the measurement object. The measuring device mount according to claim 1, further comprising a direction control mechanism.   The inflow prevention mechanism which prevents that the gas flow from the outside of the measuring device mount flows into the inside of the measuring device mount through the port where the measurement object is carried in / out is provided. For measuring equipment.   The measuring device mount according to claim 4, wherein the inflow prevention mechanism is arranged such that one end opening of a suction flow path formed at a negative pressure faces the vicinity of the port.