JP2009032715A - Substrate treatment apparatus, and substrate treatment method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate treatment apparatus and a substrate treatment method which can increase the operating rate of the apparatus when performing a predetermined treatment on a substrate contained in a lot. <P>SOLUTION: In each treatment unit 1-4, a cleanliness level corresponding to the measurement results of particle counters 41-44 out of prescribed three measured cleanliness levels MA-MC is set as a measured level. Also on the lot side, a cleanliness level required of a lot that a substrate W belongs to out of prescribed three required cleanliness levels is set as a required level. Based on a relationship between the three measured cleanliness levels MA-MC and the three required cleanliness levels RA-RC, either one of the treatment units 1-4 is selected according to the required level, and the substrate W is treated by the selected treatment unit. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a substrate processing apparatus and a substrate processing method for performing predetermined processing on each substrate included in a lot composed of a plurality of substrates. Examples of substrates include semiconductor wafers, photomask glass substrates, liquid crystal display glass substrates, plasma display glass substrates, FED (Field Emission Display) substrates, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, etc. Various substrates are included.

  The manufacturing process of an electronic component such as a semiconductor device or a liquid crystal display device includes a step of repeatedly forming a fine pattern by repeatedly performing processes such as film formation and etching on the surface of the substrate. Here, in order to perform fine processing well, it is necessary to keep the substrate in a clean state. However, if contaminants such as particles are present in the processing space in which the substrate is processed, the contaminants may adhere to the substrate, which may reduce the yield of manufactured products. In addition, when wet processing is performed on a substrate by supplying a processing solution such as chemical liquid or pure water to the substrate, the substrate is contaminated by contaminants present in the processing solution, and the yield of manufactured products is reduced. May cause.

  Therefore, in the above manufacturing process, the cleanliness of the processing space and the processing liquid is measured. For example, in the apparatus described in Patent Document 1, the substrate is immersed in a processing tank in which a processing liquid is stored. A part of the processing liquid overflowed from the processing tank is collected and the cleanliness of the processing liquid is continuously monitored in real time. As a result, even when contaminants are mixed into the processing liquid, the processing is prevented from being continued in a state where the contaminants are mixed into the processing liquid by immediately detecting this. Moreover, in the apparatus described in Patent Document 2, the contamination existing in the processing space is measured by introducing laser light into the processing space formed in the apparatus and receiving scattered light from the processing space. . Thereby, the cleanliness of the processing space can be measured in real time. Then, the process is stopped according to the cleanliness level of the processing space, and the apparatus is cleaned or overhauled.

Japanese Patent Laid-Open No. 5-121391 (FIG. 1) Japanese Patent Laid-Open No. 11-337472 (FIG. 1)

  By the way, in the substrate processing process, the same type of processing is applied to each substrate that constitutes a lot in a single unit called “lot” by combining a plurality of substrates, but the cleanliness level required for each lot is different for each lot. Is different. For example, while there are lots in which contamination due to adhesion of minute particles having a particle size of about 0.03 μm is a problem, lots in which treatment using a chemical solution only needs to be performed with little consideration of cleanliness. Is also present. However, in the conventional apparatus, such a situation on the lot side, that is, the cleanliness level required for the lot is not considered, and as a result, the following problem may occur. That is, in the conventional apparatus, the processing is stopped based only on the measured processing liquid and the cleanliness level of the processing space. For this reason, depending on the cleanliness level required for a lot, even if there is no problem even if the substrate processing is executed, the substrate processing may be stopped. As described above, there may be a mismatch between the cleanliness level required for the lot and the cleanliness level of the apparatus. As a result, there has been a problem that the operating rate of the apparatus is reduced.

  This invention is made in view of the said subject, and provides the substrate processing apparatus and substrate processing method which can improve the operation rate of an apparatus, when performing the predetermined process with respect to the substrate contained in a lot. With the goal.

  The substrate processing apparatus according to the present invention corresponds to a processing unit for processing a substrate, a measuring unit for measuring the cleanliness of the processing unit, and a measurement result of the measuring unit from a plurality of predetermined measurement cleanliness levels. Control for setting a cleanliness level to be measured as a measurement level and setting a cleanliness level required for a lot to which a substrate belongs from a plurality of predetermined cleanliness levels associated with a plurality of cleanliness levels as a required level And the control means determines whether or not the measurement level is acceptable with respect to the required level, and if so, causes the processing unit to process the substrate.

  The present invention also provides a measurement step for measuring the cleanliness of a processing unit for processing a substrate, and a cleanliness level corresponding to a measurement result of the measurement step from a plurality of predetermined measurement cleanliness levels. A unit-side setting step for setting as a required level, and a lot-side setting step for setting a required cleanliness level for a lot to which a substrate belongs from a plurality of required cleanliness levels associated with a plurality of measured cleanliness levels. And a determination step of determining whether or not the measurement level is acceptable with respect to the required level, and in the determination step, if the measurement level is allowable with respect to the required level, the processing unit may process the substrate. It is a feature.

  In the invention thus configured (substrate processing apparatus and method), the cleanliness level corresponding to the measurement result of the cleanliness of the processing unit is set as the measurement level from a plurality of preliminarily defined measurement cleanliness levels. On the other hand, a cleanliness level required for a lot to which a substrate belongs is set as a required level from a plurality of required cleanliness levels defined in advance in association with a plurality of measured cleanliness levels. Then, when the measurement level is acceptable with respect to the required level, the substrate is processed by the processing unit. Thus, if the measurement level on the processing unit side can satisfy the required level on the lot side, the substrate processing is performed without being prohibited. For this reason, for example, even if the cleanliness level of the processing unit is not the highest state, the substrate is processed if the cleanliness level required for the lot can be satisfied. Therefore, it is possible to improve the operating rate of the apparatus by avoiding a situation that has occurred in the prior art, that is, a situation where a mismatch between the cleanliness level required for the lot and the cleanliness level of the processing unit occurs.

  Here, when the measurement level is unacceptable with respect to the required level, if the processing on the substrate in the processing unit is prohibited, the measurement level on the processing unit side is included in the lot in a state that does not satisfy the required level on the lot side. It is possible to reliably prevent the substrate from being processed. Thereby, it is possible to prevent a decrease in yield due to substrate contamination.

  Also, when the measurement level is unacceptable with respect to the required level, and when improvement in the cleanliness of the processing unit is requested, the processing unit should be subjected to cleaning processing or required for maintenance of the processing unit. Also good. Thereby, not only the processing on the substrate in the processing unit is prohibited, but also the cleaning processing or the maintenance on the processing unit is performed on the processing unit. Thereby, the cleanliness of the processing unit can be improved.

  Further, in a substrate processing apparatus in which a plurality of processing units are provided and two or more of the plurality of processing units perform the same type of processing on the substrate, the same type of each other according to the required level. One of two or more processing units to be processed may be selected, and the substrate may be processed by the selected processing unit. According to this configuration, two or more processing units that perform the same type of processing are provided, and a substrate is selectively processed in any of these processing units according to a required level. For this reason, if the measurement level is acceptable for the required level in any of two or more processing units that perform the same type of processing, the substrate can be processed without stopping the processing. Therefore, it is possible to flexibly respond to the cleanliness level required for the lot, which is effective in improving the operating rate of the apparatus. Furthermore, from such a viewpoint, it is preferable to configure the apparatus so that all of the plurality of processing units perform the same type of processing on the substrate.

  Here, the following modes can be adopted as a specific mode for measuring the cleanliness of the plurality of processing units. For example, it is possible to provide a measuring unit corresponding to each of the plurality of processing units so that each measuring unit always measures the cleanliness of the corresponding processing unit. According to this configuration, it is possible to continuously monitor the cleanliness history of the processing unit and grasp the latest cleanliness of the processing unit. Further, it is possible to provide a common measuring means for a plurality of processing units so that the measuring means measures the cleanliness of each processing unit in order every predetermined time. According to this configuration, the cleanliness of the plurality of processing units can be monitored using a single measuring unit, and the apparatus configuration can be simplified.

  Moreover, it is preferable to further provide a display means for displaying the measurement level. Thereby, the operator can grasp | ascertain what level the purity degree of a processing unit exists from display content. As a result, the operator can accurately determine whether to continue the substrate processing or to request improvement of the cleanliness of the processing unit.

  In a substrate processing apparatus that supplies a processing liquid to a substrate in a processing space formed inside the processing unit and performs processing on the substrate, the measuring unit measures the cleanliness of the processing space and cleans the processing liquid. The degree may be measured. Thereby, the cleanliness of the processing unit related to the contamination of the substrate can be measured at a time, and the state of the processing unit can be accurately detected.

  According to the present invention, if the measurement level on the processing unit side can satisfy the required level on the lot side, the substrate processing is executed. Therefore, it is possible to avoid a situation in which a mismatch between the cleanliness level required for the lot and the cleanliness level of the processing unit occurs and improve the operating rate of the apparatus.

<First Embodiment>
FIG. 1 is a diagram showing a first embodiment of a substrate processing apparatus according to the present invention. This substrate processing apparatus is a single wafer processing apparatus for processing a substrate W such as a semiconductor wafer with a processing liquid or a processing gas. The substrate processing apparatus includes a substrate processing unit PP that processes a substrate W, an indexer unit ID coupled to the substrate processing unit PP, and a configuration for supplying / discharging a processing fluid (liquid or gas). The processing fluid boxes 11 and 12 are accommodated.

  The indexer unit ID is a cassette C for storing the substrates W (FOUP (Front Opening Unified Pod) for storing a plurality of substrates W in a sealed state, SMIF (Standard Mechanical Interface Face) pod, OC (Open Cassette), etc.) A cassette holding unit 21 that can hold a plurality of wafers, and a cassette C held in the cassette holding unit 21 are accessed to take out an unprocessed substrate W from the cassette C or to transfer a processed substrate to the cassette C. And an indexer robot 22 for storage.

  In each cassette C, a plurality of substrates W are accommodated in one unit called “lot”. A plurality of substrates W are transferred between various substrate processing apparatuses in units of lots, and the same type of processing is performed on each substrate W constituting the lot by each substrate processing apparatus. Each cassette C is provided with a plurality of shelves (not shown) for stacking and holding a plurality of substrates W in the vertical direction with minute intervals, and one substrate W is placed on each shelf. Can be held. Each shelf is configured to contact the peripheral edge of the lower surface of the substrate W and hold the substrate W from below. The substrate W has the front surface (pattern forming surface) facing upward and the back surface facing downward. The cassette C is accommodated in a substantially horizontal posture.

  The substrate processing unit PP includes a substrate transfer robot (substrate transfer device) 13 disposed substantially in the center in plan view, and a frame 30 to which the substrate transfer robot 13 is attached. A plurality (four in this embodiment) of processing units 1, 2, 3, 4 are mounted on the frame 30 so as to surround the substrate transfer robot 13. In this embodiment, as the processing units 1 to 4, a processing unit X <b> 1 that performs a predetermined processing on a substantially circular substrate W such as a semiconductor wafer is mounted on the frame 30. As the processing unit X1, for example, a chemical solution processing unit MP that performs chemical treatment with a chemical solution and rinse treatment with a rinse solution such as pure water on the substrate W can be employed. Hereinafter, the chemical solution and the rinse solution are collectively referred to as “treatment solution”. Each of the processing units 1, 2, 3 and 4 has processing chambers 1a, 2a, 3a and 4a in which processing spaces for processing the substrate W are formed. Then, the processing liquid is supplied to the substrate W in each of the processing chambers 1a to 4a, and wet processing is performed on the substrate W. As described above, in this embodiment, all of the plurality of processing units 1 to 4 perform the same type of processing.

  As the processing unit X1, in addition to the chemical processing unit MP, any processing unit selected from the scrub cleaning unit SS, the polymer removal unit SR, the bevel cleaning unit CB, and the gas phase cleaning unit VP can be adopted. Here, the scrub cleaning unit SS supplies pure water to the substrate W while rotating the substrate W, and scrubs the substrate surface with a scrub brush. Further, the polymer removal unit SR removes residues on the substrate W by supplying the polymer removal solution to the substrate W while rotating the substrate W. Further, the bevel cleaning unit CB supplies the processing liquid to the peripheral end surface and the surface peripheral edge portion (bevel portion) of the substrate W while rotating the substrate W so as to process the bevel portion. The vapor phase cleaning unit VP processes the substrate W by supplying the substrate W with a vapor containing a chemical solution or a vapor containing a chemical gas.

  In this embodiment, the particle counters 41, 42, 43, 44 ("measuring means" of the present invention are used to measure the cleanliness of the processing units corresponding to each of the plurality of processing units 1, 2, 3, 4). Is equivalent). The particle counters 41 to 44 count the particle size and the number of particles present in the processing spaces (in the atmosphere in which the substrate W is processed) formed in the processing chambers 1a to 4a, thereby increasing the cleanliness of the processing spaces. It is possible to measure the cleanliness of the processing liquid by measuring the particle size and the number of particles present in the processing liquid supplied to the substrate W. Thereby, the cleanliness of the processing units 1 to 4 involved in the contamination of the substrate W can be measured at a time, and the state of the processing units 1 to 4 can be accurately detected. Thus, in this embodiment, since the particle counters 41 to 44 are provided corresponding to each of the plurality of processing units 1 to 4, it is possible to always measure the cleanliness of each processing unit 1 to 4. It has become. For this reason, it is possible to continuously monitor the cleanliness history of the processing units 1 to 4 and grasp the latest cleanliness of the processing units 1 to 4.

  The substrate transport robot 13 can receive an unprocessed substrate W from the indexer robot 22 and can deliver the processed substrate W to the indexer robot 22. More specifically, for example, the substrate transfer robot 13 includes a base unit fixed to the frame 30 of the substrate processing unit PP, a lift base attached to the base unit so as to be lifted and lowered, A rotation base attached so as to be able to rotate about a vertical axis with respect to the base, and a pair of hands attached to the rotation base are provided. Each of the pair of substrate holding hands is configured to be able to advance and retract in a direction approaching / separating from the rotation axis of the rotation base. With such a configuration, the substrate transport robot 13 can point the substrate holding hand toward either the indexer robot 22 or the processing units 1 to 4, and can move the substrate holding hand back and forth in this state. W can be delivered.

  The indexer robot 22 takes out the unprocessed substrate W from the cassette C designated by the control unit described below and delivers it to the substrate transfer robot 13, and also receives the processed substrate W from the substrate transfer robot 13 to receive the cassette C To house. The processed substrate W may be stored in the cassette C that is stored when the substrate W is in an unprocessed state. In addition, the cassette C that stores the unprocessed substrate W and the cassette C that stores the processed substrate W are separated, and the cassette C is stored in a different cassette C from the cassette C stored in the unprocessed state. You may comprise so that the processed board | substrate W may be accommodated.

  FIG. 2 is a block diagram showing an electrical configuration of the substrate processing apparatus of FIG. The substrate processing apparatus includes a control unit 100 (corresponding to the “control unit” of the present invention) that controls the entire apparatus, and controls the processing units 1 to 4 and the particle counters 41 to 44 in an integrated manner. The control unit 100 includes a CPU 101 that performs arithmetic processing, a storage unit 102 that stores control software and data, and a communication unit 103 that communicates with an external device. Each is connected by a bus line 190. The storage unit 102 includes a ROM that stores a control program and the like, a RAM that is a calculation work area, a fixed disk that stores a log file, and the like. The communication unit 103 is connected to a network (not shown), and performs data communication with a host computer or the like provided outside the substrate processing apparatus via the network. The data communication method may be either wired or wireless.

  In the bus line 190, together with the plurality of processing units 1 to 4, a display unit 130 that displays various information, an operation unit 140 that receives input and operation of various information from an operator, and a recording medium such as a magnetic disk or a magneto-optical disk A reading device 150 for reading various data from 91 is also electrically connected. As a result, data can be exchanged between each unit of the substrate processing apparatus via the bus line 190 under the control of the control unit 100.

  Next, the operation of the substrate processing apparatus configured as described above will be described with reference to FIGS. FIG. 3 is a flowchart showing the operation of the substrate processing apparatus of FIG. Here, a case where wet processing using a processing liquid is performed on a substrate W included in each lot for a plurality of lots (three lots L1 to L3 in this embodiment) will be described. In this embodiment, the cleanliness of each processing unit 1 to 4 is constantly measured by the particle counters 41 to 44 (step S1; measurement process), and the cleanliness of each processing unit 1 to 4 is classified as follows. The

  FIG. 4 is a diagram illustrating an example of the measurement result of the cleanliness of each processing unit. The control unit 100 sets the cleanliness level corresponding to the measurement results of the particle counters 41 to 44 as a measurement level from a plurality of (three in this embodiment) measured cleanliness levels defined in advance (step S2; unit side setting). Process). In this embodiment, as the three measured cleanliness levels, for example, the measured cleanliness level MA (particle diameter: 0.03 μm or more and less than 0.1 μm, number of particles: within 5) in order from the highest cleanliness, measurement The cleanliness level MB (particle size: 0.1 μm or more and less than 0.2 μm, number of particles: within 5) and the measured cleanliness level MC (particle size: 0.2 μm or more, number of particles: within 5) are previously set. It is prescribed. When the measurement results of the particle counters 41 to 44 correspond to MA, MB, MB, and MC, respectively, as shown in the upper right box of FIG. 3 and FIG. Are set to MA, MB, MB, and MC, respectively, and stored in the storage unit 102 of the control unit 100.

  On the other hand, also on the lot side, the control unit 100 sets, as the required level, the cleanliness level required for the lot to which the substrate W belongs from a plurality (three in this embodiment) of required cleanliness levels defined in advance (step). S3: Lot side setting step). As the three required cleanliness levels, for example, the required cleanliness level RA that requires the highest level of cleanliness in order from the highest cleanliness level, the required cleanliness level RB that requires the normal level of cleanliness, and the cleanliness level. The required cleanliness level RC not to be set is defined in advance. Such required cleanliness level classification (level division) is performed based on, for example, the line width of a pattern formed on the surface of the substrate W constituting the lot. Here, as illustrated in the middle right box in FIG. 3, the operation when the request levels of the lots L <b> 1 to L <b> 3 are set to RA, RB, and RC will be described as an example as appropriate.

  In this embodiment, the required cleanliness levels RA to RC described above are associated with the three measured cleanliness levels MA to MC as follows. FIG. 5 is a diagram showing a correspondence relationship between the measured cleanliness level and the required cleanliness level. The reason why the correspondence relationship between the measured cleanliness levels MA to MC and the required cleanliness levels RA to RC is specified is as follows. That is, even if the cleanliness level required for a lot is high, if the substrate W included in the lot is processed by a processing unit having a low cleanliness level, the substrate W is contaminated by contamination of the substrate W. Risk of fatal damage. For this reason, a measurement cleanliness level is defined that does not cause a problem even if processing is performed for each required cleanliness level on the lot side. For example, when the required cleanliness level is RA, it is defined that the process is permitted only when the measured cleanliness level is MA (FIG. 5A). Further, when the required cleanliness level is RB, it is defined that the processing is permitted when the measured cleanliness level is MA and MB (FIG. 5B). Further, when the required cleanliness level is RC, it is defined that the process is permitted regardless of the measured cleanliness level, that is, when the measured cleanliness level is any of MA to MC (FIG. 5C).

  Then, the control unit 100 executes steps S4 to S9 to set processing units that can be processed for the lots L1 to L3. In step S4, the first lot, for example, the lot L1 is selected. Then, the control unit 100 determines whether the measurement level of each processing unit 1 to 4 is permissible with respect to the required level of the lot based on the correspondence relationship (step S5; determination process). If the measurement level is not acceptable for the required level (NO in step S5), specifically, if there is no processing unit that can accept the measurement level for the required level on the lot side, the lot is included in the lot. The processing of the substrate W to be processed is prohibited (step S6). In other words, if this is the case, the storage unit 102 stores that there is no processing unit that can be processed. On the other hand, if there are processing units in the processing units 1 to 4 that allow the measurement level with respect to the required level (YES in step S5), the processing unit determined according to the correspondence shown in FIG. It is set as “processing unit” and stored in the storage unit 102. For example, when the settings are made as shown in the upper right box and the middle right box in FIG. 3, only the processing unit 1 is set as the “processable processing unit” for the lot L1. When the setting for this lot is completed, in the next step S8, the control unit 100 determines whether or not the setting of “processable processing units” has been completed for all lots (step S8). Until “YES” is determined in step S8, “processable processing units” are set for the next lot (steps S5 to S7). Thus, when the setting of the “processable processing units” is completed for all the lots L1 to L3, as shown in the lower right box in FIG. 3, processing that can be performed on the substrates W constituting each lot L1 to L3. Unit is set. And the control part 100 performs a process, distributing the board | substrate W which comprises the lots L1-L3 to the processable process unit based on the information regarding the processable process unit (step S10). More specifically, the process is executed as follows.

  When the cassette C containing a plurality of substrates W is transported to the indexer unit ID by the indexer robot 22, processing is performed on each substrate W as follows. That is, when the lot transported to the indexer unit ID is L1, the control unit 100 processes each substrate W included in the lot L1 by the processing unit 1 (step S10). When the lot transferred to the indexer ID is L2, each substrate W included in the lot L2 is processed by one of the processing units 1 to 3 (step S10). Furthermore, when the lot transported to the indexer unit ID is L3, each substrate W included in the lot L3 is processed by one of the processing units 1 to 4 (step S10). That is, a processing unit is selected from the processing units 1 to 4 according to the measurement level and the required level, and the substrate W is processed by the selected processing unit. In this embodiment, the selection of the processing unit according to the measurement level and the required level is performed collectively for the three lots L1 to L3. However, the processing unit may be selected for each lot. . That is, after selecting a processing unit for one lot and processing a substrate W in the lot, the same processing may be repeated for the next lot. Further, the processing unit of the next lot may be selected during the processing of the previous lot.

  Next, a method for coping with a decrease in the cleanliness of the processing unit will be described. When the cleanliness of the processing unit is reduced, some kind of recovery procedure is required to improve the cleanliness of the processing unit. Therefore, in this embodiment, a reference value is set for the measured cleanliness level in order to determine whether or not recovery measures are taken, and the cleanliness of the processing unit decreases and the measured level falls below the reference value (measurement). When the level is lower than the reference value), the following measures are taken.

  FIG. 6 is a flowchart showing an example of handling when the measurement level falls below the reference value. FIG. 7 is an operation explanatory diagram for explaining a countermeasure example when the measurement level falls below the reference value. Here, the case where the boundary value between the measured cleanliness level MA and the measured cleanliness level MB is used as a reference value will be described. That is, a case will be described in which a recovery procedure is taken when the measurement level drops from MA to MB or MC.

  Among the processing units 1 to 4, for example, when the measurement level is lower than the reference value in the processing units 3 and 4 (when the measurement level is MB or MC), the substrate whose measurement level is not acceptable for the required level Processing is prohibited (FIG. 7A). Specifically, the processing units 3 and 4 prohibit the processing of the substrate W included in the lot whose request level is set to RA (step S21). Accordingly, it is possible to reliably prevent the substrate W included in the lot from being processed in a state where the measurement level on the processing unit side does not satisfy the required level on the lot side. If the measurement level falls below the reference value during the processing of the substrate W (YES in step S22), the substrate W is processed in a state where the measurement level falls below the reference value in the log file of the substrate W. Is recorded (step S23). As a result, it is possible to confirm afterwards how the substrate W has been processed.

  Subsequently, the control unit 100 displays on the display unit 130 that the measurement levels of the processing units 1 to 4 and the measurement levels of the processing units 3 and 4 are below the reference value (step S24), and generates an alarm. The operator is notified (step S25). Thereby, the operator can grasp | ascertain what level the cleanliness of the processing units 1-4 is. As a result, the operator can accurately determine whether to continue the substrate processing or to request improvement of the cleanliness of the processing unit. In addition, the control unit 100 notifies the host computer via the communication unit 103 that the measurement levels of the processing units 3 and 4 are below the reference value.

  Thereafter, it is determined whether or not the operator or the host computer requests improvement of the cleanliness of the processing units 3 and 4. If the operator or the host computer does not request improvement of the cleanliness of the processing units 3 and 4 (NO in step S26), the processing of the substrate W included in the lot that allows the measurement level with respect to the required level is continued. (Step S27). Specifically, for example, when the measurement level of the processing units 3 and 4 is MB, the processing of the substrate W included in the lot whose request level is set to RB or RC is continued. On the other hand, when the operator or the host computer requests improvement of the cleanliness of the processing units 3 and 4 (YES in step S26), the substrate processing in the processing units 3 and 4 is stopped (step S28). Subsequently, the processing units 3 and 4 are cleaned by an operator's operation or automatically according to a predetermined cleaning recipe (step S29). In addition, while the substrate processing in the processing units 3 and 4 is stopped, the substrate processing is continued in the processing unit 1 or 2 (FIG. 7B).

  If the cleanliness of the processing units 3 and 4 has improved after execution of the unit cleaning (YES in step S30), the substrate processing in the processing units 3 and 4 is resumed (FIG. 7C). Specifically, since the measurement levels of the processing units 3 and 4 are equal to or higher than the reference value, any lot set at any required level can be processed while satisfying the required level.

  On the other hand, if the cleanliness of the processing units 3 and 4 has not improved (NO in step S30) even though the unit cleaning has been executed, the control unit 100 uses a specialized engineer for the processing unit. The maintenance by is requested (step S31). If maintenance by a professional engineer can be performed immediately (YES in step S32), the maintenance is performed with the processing unit stopped (step S33). Thereby, the cleanliness of the processing units 3 and 4 is improved, and the substrate processing in the processing units 3 and 4 is resumed. On the other hand, if there is no specialized engineer (NO in step S32), maintenance cannot be performed immediately. In this case, in order to improve the operation rate of the apparatus, the processing of the substrate W included in the lot that allows the measurement level with respect to the required level is executed (step S34). Specifically, for example, when the measurement level of the processing units 3 and 4 is MB, the processing of the substrate W included in the lot whose request level is set to RB or RC is executed. Thereby, even when a specialized engineer is absent, the substrate processing in the processing units 3 and 4 is not stopped, and the operating rate of the apparatus can be improved. Thereafter, maintenance by an engineer is performed (step S33), and the substrate processing in the processing units 3 and 4 is resumed.

  As described above, according to this embodiment, the cleanliness level corresponding to the measurement result of the cleanliness of the processing units 1 to 4 is measured from a plurality (three) of measured cleanliness levels MA to MC. On the other hand, the required cleanliness level required for the lot to which the substrate W belongs is requested from a plurality of required cleanliness levels RA to RC that are defined in advance in association with a plurality (three) of measured cleanliness levels MA to MC. It is set as a level. When the measurement level is acceptable with respect to the required level, the processing units 1 to 4 process the substrate W. That is, if the measurement level on the processing unit side can satisfy the required level on the lot side, the substrate processing is executed without being prohibited. For this reason, for example, even if the cleanliness of the processing units 1 to 4 is not the highest, the substrate W is processed if the cleanliness level required for the lot can be satisfied. On the other hand, when the measurement level cannot be allowed with respect to the required level, the processing on the substrate W in the processing unit is prohibited. For this reason, it is possible to surely prevent the substrate W included in the lot from being processed in a state where the measurement level on the processing unit side does not satisfy the required level on the lot side. Thereby, it is possible to prevent a decrease in yield due to contamination of the substrate W.

  Here, when the cleanliness level required for a lot is not considered as in the prior art, the following problems occur. For example, as shown in FIG. 8, when the measurement level of the processing units 1 to 4 is MB or MC, the processing for the substrate W cannot be performed in all the processing units 1 to 4. Because the cleanliness level required for the lot to be processed is unknown on the processing unit side, it is necessary to keep the measurement level at MA in order to satisfy the required cleanliness level for any lot. There is. Therefore, when the measurement level is MB or MC, it is necessary to prohibit the substrate processing. As a result, if the required level of the lot to be processed is actually MB, it cannot be processed even though it can be processed by any one of the processing units 1 to 3.

  On the other hand, according to this embodiment, depending on the cleanliness level required for the lot, it is possible to avoid a situation where the substrate processing is stopped until no problem occurs even if the substrate processing is executed. That is, it is possible to avoid a situation in which a mismatch between the cleanliness level required for the lot and the cleanliness level of the processing unit occurs. As a result, the operating rate of the apparatus can be improved.

  Further, according to this embodiment, the apparatus is configured such that all of the plurality (four) of the processing units 1 to 4 perform the same type of processing on the substrate W. For this reason, if even one of the processing units 1 to 4 can accept the measurement level with respect to the required level, the substrate W can be processed without stopping the substrate processing. Therefore, it is possible to flexibly respond to the cleanliness level required for the lot, which is effective in improving the operating rate of the apparatus.

Second Embodiment
FIG. 9 is a view showing a second embodiment of the substrate processing apparatus according to the present invention. The substrate processing apparatus according to the second embodiment is greatly different from the first embodiment in that particle counters 41 to 44 are provided corresponding to each of a plurality (four) of processing units 1 to 4. In other words, a common particle counter 40 is provided for the plurality of processing units 1 to 4. Since other configurations and operations are basically the same as those in the first embodiment, the same reference numerals are given here and description thereof is omitted.

  In this embodiment, the particle counter 40 is configured to measure the cleanliness of each of the processing units 1 to 4 in order every predetermined time (for example, every 1 minute). Specifically, the particle counter 40 counts the particle size and the number of particles existing in the processing spaces formed in the processing chambers 1a to 4a of the processing units 1 to 4 in order at predetermined time intervals. It is configured to measure the cleanliness of the processing liquid by measuring the cleanliness and counting the particle diameter and the number of particles present in the processing liquid supplied to the substrate W. According to this configuration, the cleanliness of the plurality of processing units 1 to 4 can be monitored using a single particle counter, and the apparatus configuration can be simplified.

<Third Embodiment>
FIG. 10 is a diagram showing a third embodiment of the substrate processing apparatus according to the present invention. The substrate processing apparatus according to the third embodiment is greatly different from the first embodiment in the following points. That is, in the first embodiment, the processing unit X1 is mounted on the frame 30 as the processing units 1 to 4, and all the processing units 1 to 4 perform the same type of processing. On the other hand, in the third embodiment, two types of processing units X1 and Y1 that perform different types of processing are mounted on the frame 30. Specifically, the processing unit X1 is mounted on the frame 30 as the processing units 1 and 2, while the processing unit Y1 that performs processing different from the processing unit X1 on the substrate W as the processing units 3 and 4 is performed on the frame 30. It is mounted on. The processing unit Y1 is a processing unit that performs different types of processing from the processing unit X1, and is selected from the chemical processing unit MP, the scrub cleaning unit SS, the polymer removal unit SR, the bevel cleaning unit CB, and the gas phase cleaning unit VP. Any processing unit can be employed.

  In this embodiment, each substrate W constituting a lot is processed by the processing unit X1 or the processing unit Y1 according to the processing content. Here, for example, when each substrate W constituting the lot is processed by the processing unit X1, either the processing unit 1 or the processing unit 2 is selected, and the substrate W is processed by the selected processing unit. . Specifically, for example, when the requested level on the lot side is set to RB, while the measurement level of the processing unit 1 is set to MA and the measurement level of the processing unit 2 is set to MB, the substrate included in the lot W can be processed by both of the processing units 1 and 2. Further, for example, when the requested level on the lot side is set to RB, while the measurement level of the processing unit 1 is set to MB and the measurement level of the processing unit 2 is set to MC, the lot is processed only by the processing unit 1. It is possible. That is, when even one of the two processing units 1 and 2 can accept the measurement level with respect to the required level, the substrate W can be processed without stopping the substrate processing. The case where each substrate W constituting the lot is processed by the processing unit Y1 is the same as the case where it is processed by the processing unit X1.

  Further, when the processing unit X1 (processing units 1 and 2) cannot accept the measurement level relative to the required level, the processing of the substrate W in the processing unit X1 is prohibited. However, even in this case, the substrate W can be processed by the processing unit Y1 if the measurement level is acceptable for the required level in the processing unit Y1 (processing units 3 and 4). Similarly, when the processing unit Y1 cannot accept the measurement level with respect to the required level, the processing unit Y1 prohibits the processing of the substrate W. Even in this case, the processing unit X1 does not satisfy the required level. If the measurement level is acceptable, the processing unit X1 can process the substrate W.

  As described above, in this embodiment, two processing units that perform the same type of processing on the substrate W among the processing units 1 to 4 are provided, and one of the two processing units is selected according to the required level. Then, the substrate W is selectively processed. For this reason, if the measurement level is acceptable with respect to the required level in either of the two processing units that perform the same type of processing, the substrate W can be processed without stopping the substrate processing. . Therefore, it is effective in improving the operating rate of the apparatus.

<Others>
The present invention is not limited to the above-described embodiment, and various modifications other than those described above can be made without departing from the spirit of the present invention. For example, in the above-described embodiment, a plurality of processing units are provided in the substrate processing apparatus. However, the present invention is not limited to this, and a single processing unit may be provided in the substrate processing apparatus. Even in this case, the substrate W is processed by the processing unit if the measurement level is acceptable with respect to the required level. For this reason, it is possible to improve the operating rate of the apparatus by avoiding the situation that occurred in the prior art, that is, the mismatch between the cleanliness level required for the lot and the cleanliness level of the processing unit. it can.

  Moreover, although the said embodiment demonstrated the case where four processing units were arrange | positioned in a substrate processing apparatus as a some processing unit, the number of processing units is not limited to four and is arbitrary.

  In the above embodiment, a substrate processing apparatus has been described in which two or more processing units out of a plurality (4) of processing units perform the same type of processing on the substrate W. Without being limited thereto, the present invention can also be applied to a substrate processing apparatus in which a plurality of processing units perform different types of processing on the substrate W.

  In the third embodiment, two types of processing units X1 and Y1 are disposed in the substrate processing apparatus by two each, but one processing unit X1 is disposed and three processing units Y1 are disposed. It is also possible to arrange three processing units X1 and one processing unit Y1.

  In the above embodiment, the three levels of MA to MC are set as the plurality of measured cleanliness levels. However, the present invention is not limited to this, and the measured cleanliness levels are set to two levels or four or more levels. Also good. Moreover, although it sets to 3 steps | paragraphs RA-RC as a some required cleanliness | purity level, it is not limited to this, You may make it set a measured cleanliness level to 2 steps | paragraphs or 4 steps | paragraphs or more.

  Moreover, in the said embodiment, although the correspondence between a measurement cleanliness level and a request | requirement cleanliness level is prescribed | regulated as shown in FIG. 5, the correspondence between both is not limited to this. For example, while a plurality of measured cleanliness levels are set in three stages of MA to MC, two required cleanliness levels are RH (requires a relatively high cleanliness) and RL (requires a relatively low cleanliness). It may be set in stages and the correspondence between the two may be defined as shown in FIG. Specifically, when the required cleanliness level is RH, it is specified that the process is permitted only when the measured cleanliness level is MA, while when the required cleanliness level is RL, the measured cleanliness levels are MA and MB. In this case, it may be specified that the processing is permitted. In short, it is only necessary that the correspondence between a plurality of measured cleanliness levels and a plurality of required cleanliness levels is clear. In the case of the correspondence shown in FIG. 11, the processing unit in which the measurement level is set to MC cannot process the substrate W regardless of the required level of RH or RL. Therefore, for the processing unit whose measurement level is set to MC, the processing unit is subjected to cleaning processing or maintenance by a professional engineer.

  In the above embodiment, the particle counter measures the cleanliness of the processing space (in the atmosphere in which the substrate W is processed) formed in each of the processing chambers 1a to 4a and cleans the processing liquid supplied to the substrate W. The degree is measured, but is not limited to this. For example, depending on the processing content of the substrate W, the particle counter may measure only the cleanness of the processing space or only the cleanliness of the processing liquid supplied to the substrate W.

  In the above embodiment, when improvement in the cleanliness of the processing unit is requested, maintenance by a professional engineer is performed after improvement of the cleanliness of the processing unit is not observed after execution of the cleaning process on the processing unit. ing. However, the coping method when the improvement of the cleanliness of the processing unit is required is not limited to this, and when the improvement of the cleanliness of the processing unit is required, the maintenance by the professional engineer may be requested immediately. Good.

  Further, in the above-described embodiment, the present invention is applied to a single-wafer type substrate processing apparatus that processes each substrate constituting a lot one by one in a processing unit. However, the application target of the present invention is not limited to this, and the present invention can also be applied to a batch type substrate processing apparatus that collectively processes a plurality of substrates W in a processing unit. . For example, a plurality of substrates W may be arranged in a processing tank in which a processing space is formed, and the plurality of substrates W may be collectively processed. In short, a required level may be set for each lot, and processing may be performed on each substrate W constituting the lot so as to satisfy the required level.

  The present invention relates to a semiconductor wafer, a glass substrate for photomask, a glass substrate for liquid crystal display, a glass substrate for plasma display, a substrate for FED (Field Emission Display), a substrate for optical disk, a substrate for magnetic disk, a substrate for magneto-optical disk, etc. The present invention can be applied to a substrate processing apparatus and a substrate processing method for performing a predetermined process on all the substrates including the substrate.

BRIEF DESCRIPTION OF THE DRAWINGS It is a figure which shows 1st Embodiment of the substrate processing apparatus concerning this invention. It is a block diagram which shows the electrical structure of the substrate processing apparatus of FIG. It is a flowchart which shows operation | movement of the substrate processing apparatus of FIG. It is a figure which shows an example of the measurement result of the cleanliness of each processing unit. It is a figure which shows the correspondence between a measurement cleanliness level and a request | requirement cleanliness level. It is a flowchart which shows the countermeasure example when a measurement level is less than a reference value. It is operation | movement explanatory drawing for demonstrating the example of a countermeasure when a measurement level is less than a reference value. It is a figure which shows the comparative example when the cleanliness requested | required by the lot side is not considered. It is a figure which shows 2nd Embodiment of the substrate processing apparatus concerning this invention. It is a figure which shows 3rd Embodiment of the substrate processing apparatus concerning this invention. It is a figure which shows the modification of the correspondence between a measurement cleanliness level and a request | requirement cleanliness level.

Explanation of symbols

1, 2, 3, 4 ... processing units 40, 41, 42, 43, 44 ... particle counter (measuring means)
100: Control unit (control means)
130: Display section (display means)
MA, MB, MC ... Measured cleanliness level RA, RB, RC, RH, RL ... Required cleanliness level L1, L2, L3 ... Lot W ... Substrate

Claims (15)

A processing unit for processing the substrate;
Measuring means for measuring the cleanliness of the processing unit;
A cleanliness level corresponding to a measurement result of the measuring means is set as a measurement level from a plurality of predefined measurement cleanliness levels, and a plurality of required cleanliness levels defined in advance in association with the plurality of measured cleanliness levels Control means for setting a cleanliness level required for the lot to which the substrate belongs from the level as a required level,
The control means determines whether or not the measurement level is acceptable with respect to the required level, and if it is acceptable, causes the processing unit to process the substrate.   The substrate processing apparatus according to claim 1, wherein the control unit prohibits processing of the substrate in the processing unit when the measurement level is not allowable with respect to the required level.   The control means executes a cleaning process on the processing unit when the measurement level is unacceptable with respect to the required level and the improvement of the cleanliness of the processing unit is requested, or the processing unit The substrate processing apparatus according to claim 2, wherein maintenance for the substrate is requested. 4. The substrate processing apparatus according to claim 1, wherein a plurality of the processing units are provided, and two or more processing units of the plurality of processing units perform the same type of processing on the substrate. Because
The control means selects one of two or more processing units that perform the same type of processing in accordance with the required level, and causes the substrate to be processed by the selected processing unit.   The substrate processing apparatus according to claim 4, wherein all of the plurality of processing units perform the same type of processing on the substrate. The measuring means is provided corresponding to each of the plurality of processing units,
6. The substrate processing apparatus according to claim 4, wherein each measuring means always measures the cleanliness of the corresponding processing unit. The measurement means common to the plurality of processing units is provided,
The substrate processing apparatus according to claim 4, wherein the measuring unit measures the cleanliness of each processing unit in order at predetermined time intervals.   The substrate processing apparatus according to claim 1, further comprising display means for displaying the measurement level. The substrate processing apparatus according to claim 1, wherein a processing liquid is supplied to the substrate in a processing space formed inside the processing unit to perform the processing on the substrate.
The substrate processing apparatus, wherein the measuring unit measures the cleanliness of the processing space and measures the cleanliness of the processing liquid. A measurement process for measuring the cleanliness of a processing unit for processing a substrate;
A unit-side setting step for setting, as a measurement level, a cleanliness level corresponding to a measurement result of the measurement step from a plurality of predetermined measurement cleanliness levels;
A lot-side setting step for setting, as a required level, a cleanliness level required for a lot to which the substrate belongs from a plurality of required cleanliness levels defined in advance in association with the plurality of measured cleanliness levels;
A determination step of determining whether or not the measurement level is acceptable with respect to the required level,
In the determination step, the substrate is processed by the processing unit when the measurement level is acceptable with respect to the required level.   The substrate processing method according to claim 10, wherein in the determination step, when the measurement level is unacceptable with respect to the required level, processing on the substrate in the processing unit is prohibited.   In the determination step, when the measurement level is unacceptable with respect to the required level, and the improvement of the cleanliness of the processing unit is requested, a cleaning process is performed on the processing unit or the processing unit The substrate processing method according to claim 11, wherein maintenance for the substrate is requested. The substrate processing method according to claim 10, wherein a plurality of the processing units are provided, and two or more of the plurality of processing units perform the same type of processing on the substrate. Because
A substrate processing method of selecting one of two or more processing units that perform the same type of processing according to the required level, and processing the substrate with the selected processing unit.   The substrate processing method according to claim 13, wherein all of the plurality of processing units perform the same type of processing on the substrate. The substrate processing method according to claim 10, wherein a processing liquid is supplied to the substrate in a processing space formed inside the processing unit to perform the processing on the substrate.
In the measurement step, the substrate processing method of measuring the cleanliness of the processing space while measuring the cleanliness of the processing space.

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