JP2009023879A - Method and apparatus for producing silicon carbide single crystal - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method and an apparatus for producing the silicon carbide single crystal preventing a silicon carbide single crystal from cracking while keeping a growth space region in a uniformly heated state, in the growth of the silicon carbide single crystal. <P>SOLUTION: The apparatus for producing the silicon carbide single crystal comprises a partitioning plate 23c in an opening end of a cylindrical part 23b in a closing part 23 composing a lid 20, so as to prevent sublimated gas from flowing into the space 23e between the inner wall of the side wall part 21 composing the lid 20 using the partitioning plate 23c and the cylindrical part 23b. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a method and an apparatus for producing silicon carbide (hereinafter referred to as SiC) single crystal that can be used as a material for a power MOSFET or the like.

  Conventionally, a method has been proposed in which a SiC single crystal is grown in a crucible using a resistance heater arranged on the outer periphery of the crucible (see, for example, Patent Document 1). Specifically, in patent document 1, while joining a seed crystal in a graphite crucible and heating the SiC powder raw material arranged at the bottom of the crucible to 2300 ° C., for example, the SiC powder raw material is sublimated and sublimated. There has been proposed a method of crystallizing a gas on a seed crystal set at a temperature lower than the raw material temperature.

  FIG. 6 is a diagram showing a schematic cross-sectional structure of a SiC single crystal manufacturing apparatus used for the sublimation reprecipitation method. As shown in this figure, a cylindrical projection J3 is provided on the inner wall of a lid member J2 of a graphite crucible J1, and a seed crystal J4 is attached to the end face of the projection J3. Further, a shielding plate J6 is provided which has a surface facing the growth surface of the seed crystal J4 and forms a growth space region J5 with the seed crystal J4.

Further, a skirt-like cylindrical portion J7 is provided in the lid member J2 so as to surround the seed crystal J4. The cylindrical portion J7 and the shielding plate J6 reduce the radial temperature distribution on the seed crystal J4 side of the crucible J1, thereby reducing the seed. The growth surface of the crystal J4 is set to be lower in temperature than other portions. In this way, the SiC single crystal J8 is grown on the seed crystal J4 so as to keep the soaking in the growth space region J5. In this case, polycrystalline growth also occurs around the SiC single crystal J8.
JP 2001-114598 A

  However, in the above conventional technique, with the growth time of the SiC single crystal J8, the sublimation gas flows into the outer periphery of the shielding plate J6, specifically, the space between the inside of the side wall portion of the crucible J1 and the cylindrical portion J7. The polycrystalline silicon carbide grows in the space. By forming the polycrystal so as to be in contact with both the crucible J1 and the cylindrical portion J7, the heat received from the heater by the crucible J1 is transmitted to the growth space region J5 through the polycrystal, and the crucible in the growth space region J5. The radial temperature distribution of J1 becomes large and the soaking state cannot be maintained.

  That is, in the growth space region J5, the temperature in the vicinity of the cylindrical portion J7 becomes higher than the temperature in the vicinity of the central axis of the crucible J1, and the crystal growth in the vicinity of the central axis of the crucible J1 having a low temperature accelerates. Diameter expansion and convex growth will proceed rapidly. As a result, there is a problem that large distortion occurs in SiC single crystal J8, and SiC single crystal J8 breaks.

  In view of the above points, an object of the present invention is to provide a manufacturing apparatus and a manufacturing method capable of keeping a growth space region soaking and preventing cracking of a silicon carbide single crystal in SiC single crystal growth.

  In order to achieve the above object, the present invention provides a lid (20) having a hollow cylindrical side wall (21) and a plate, and a seed crystal (40) is disposed on one side of the plate. A lid (22) attached to one of the open ends of the side wall (21) so that the seed crystal (40) is housed in the hollow part of the side wall (21), and a plate, 40) has a penetrating window part (23d) into which the side surface of the plate is integrated with the inner wall of the side wall part (21), and the inner wall of the side wall part (21). A hollow cylinder having a small diameter is formed, and a hollow portion of the hollow cylinder is used as a growth space region (60) to supply a sublimation gas, and a lid member (22 in the support plate (23a)) is provided. ) And a cylindrical portion (23b) in which one of the open ends of the hollow cylinder is integrated on the surface opposite to the surface opposite to It is a donut-shaped thing which suppresses gas flowing into the space (23e) between the inner wall of the side wall part (21) and the outer wall of the cylindrical part (23b), and the inner peripheral end of the donut part is the cylindrical part (23b ) And a partition plate (23c) which is integrated with the other of the open ends of the donut portion and is arranged on the inner wall side of the side wall portion (21).

  According to this, the partition plate (23c) can make it difficult for the sublimation gas generated from the silicon carbide raw material (50) to enter the space (23e) between the side wall portion (21) and the cylindrical portion (23b). As a result, the growth of polycrystalline silicon carbide (45) in this space (23e) can be suppressed, and if the partition plate (23c) is not provided, it will be formed in the space (23e). The heat given to the side wall (21) by the crystal (45) can be prevented from being transferred to the cylindrical part (23b). Therefore, the heat distribution in the hollow portion of the cylindrical portion (23b) can be reduced, and the growth space region (60) in which the silicon carbide single crystal (70) is grown can be kept soaking. By the above, the diameter expansion and convex growth of the silicon carbide single crystal (70) can be prevented, and cracking of the silicon carbide single crystal (70) can be prevented.

  As the lid (20), the outer peripheral end (23g) of the partition plate (23c) is not in contact with the inner wall of the side wall (21), and the outer peripheral end (23g) of the partition plate (23c) and the side wall (21). A gap (23h) may be provided between the inner wall and the inner wall.

  Thereby, when the inside of the crucible (1) is evacuated, the air in the space (23e) can be easily released from the space (23e). Therefore, it is possible to prevent the crucible (1) from being destroyed by expanding the air in the space (23e) without being discharged outside the crucible (1) during evacuation.

  Further, as the lid (20), the outer peripheral end (23g) of the partition plate (23c) is in contact with the inner wall of the side wall (21, 30), and the support plate (23a) includes the support plate (23a) and the lid. The through-hole (23i) which connects the space between material (22) and the space (23e) between a side wall part (21) and a cylindrical part (23b) can be provided.

  Such a through hole (23i) can also make it easy to escape the air in the space (23e) when the crucible (1) is evacuated.

  Further, as the lid (20), the outer peripheral end (23g) of the partition plate (23c) is in contact with the inner wall of the side wall (21), and the side wall (21) includes the side wall (21) and the cylindrical part. The through-hole (23j) which connects the space (23e) between (23b) and the exterior of the crucible (1) can also be provided.

  Even with such a configuration, the air in the space (23e) can be easily discharged to the outside of the crucible (1).

  And as a cover body (20), the heat insulation member (23k) shall be arrange | positioned in the space (23e) between a side wall part (21) and a cylindrical part (23b).

  Thereby, the heat given to the crucible (1) can be made difficult to be transmitted to the growth space region (60), and the growth space region (60) can be kept soaked.

  In the above description, the silicon carbide single crystal manufacturing apparatus has been described, but the same can be said for the silicon carbide single crystal manufacturing method. That is, the crucible (1) is heated to generate a sublimation gas from the silicon carbide raw material (50), and the sublimation gas is supplied to the growth space region (60), whereby the silicon carbide single crystal (70) is added to the seed crystal (40). ), The partition plate (23c) provided in the cylindrical portion (23b) is prevented from flowing into the space (23e) between the side wall portion (21) and the cylindrical portion (23b), thereby sublimating gas. Can hardly enter the space (23e) between the side wall portion (21) and the cylindrical portion (23b), and the polycrystalline silicon carbide (45) can be prevented from growing in the space (23e). .

  As a result, the growth space region (60) can be maintained at a constant temperature, so that the silicon carbide single crystal (70) can be prevented from expanding in diameter and projecting, thereby preventing the silicon carbide single crystal (70) from cracking. it can.

  In addition, the code | symbol in the bracket | parenthesis of each said means shows the correspondence with the specific means as described in embodiment mentioned later.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments, the same or equivalent parts are denoted by the same reference numerals in the drawings.

(First embodiment)
Hereinafter, a first embodiment of the present invention will be described with reference to the drawings. FIG. 1 shows a cross-sectional configuration of the SiC single crystal manufacturing apparatus according to the first embodiment of the present invention. As shown in this figure, the SiC single crystal manufacturing apparatus includes a graphite crucible 1 constituted by a bottomed cylindrical container body 10 and a circular lid 20.

  A pedestal 11 is disposed on the bottom of the container body 10 in the crucible 1, and a shaft 12 is erected on the pedestal 11. A shield plate 13 having a surface facing the growth surface of the seed crystal 40 is attached to the tip of the shaft 12.

  Furthermore, a SiC powder raw material 50 serving as a sublimation gas supply source is disposed in the container body 10. The sublimation gas from the powder raw material 50 is recrystallized on the surface of the seed crystal 40 using the space between the seed crystal 40 and the shielding plate 13 in the space in the crucible 1 as a growth space region 60. The SiC single crystal 70 is grown on the surface.

  The lid 20 includes a cylindrical side wall portion 21, a disk-shaped lid member 22 that closes one of the openings of the side wall portion 21, and a shielding portion 23 that is accommodated in the side wall portion 21. . The lid member 22 is provided with a cylindrical protrusion 22a, and a circular SiC seed crystal 40 is attached to the opening end of the protrusion 22a so as to close the opening end.

  The shielding part 23 has a support plate 23a, a cylindrical part 23b, and a partition plate 23c. The support plate 23a is provided with a window portion 23d through which the plate penetrates, and the side surface is fixed to the inner wall of the side wall portion 21 in a state where the projection portion 22a of the lid member 22 is inserted into the window portion 23d. . The cylindrical portion 23b has a skirt shape, that is, a cylindrical shape, and one end portion of the cylindrical portion is integrated with the end surface of the support plate 23a. The cylindrical portion 23b serves to reduce the radial temperature distribution around the seed crystal 40, that is, to soak the growth space region 60.

  The partition plate 23c serves to suppress sublimation gas generated from the powder raw material 50 from flowing into the space 23e between the inner wall of the side wall portion 21 and the cylindrical portion 23b. The partition plate 23 c has a donut shape, and the inner peripheral end of the donut portion is integrated with the opening end of the cylindrical portion 23 b, and the outer peripheral end is in contact with the inner wall of the side wall portion 21. In this embodiment, the inner peripheral end of the partition plate 23c is integrated with the other open end of the cylindrical portion 23b, the outer peripheral end is disposed on the inner wall side of the side wall portion 21, and the partition plate 23c is the central axis of the crucible 1. It is arranged in parallel to the vertical plane.

  Further, a resistance heater (not shown) is disposed so as to surround the outer periphery of the crucible 1. The above is the configuration of the SiC single crystal manufacturing apparatus according to the present embodiment.

  Next, a method for manufacturing a SiC single crystal using the SiC single crystal manufacturing apparatus will be described with reference to the drawings. First, as shown in FIG. 1, the seed crystal 40 is attached to the opening end of the protrusion 22 a of the lid member 22, and the lid member 22 is attached to the side wall portion 21 to which the shielding portion 23 is attached. On the other hand, the pedestal 11 is disposed on the container body 10, the shielding plate 13 is attached via the shaft 12, and the powder material 50 is disposed on the container body 10.

  Subsequently, the crucible 1 is placed in a heating chamber (not shown), and gas is discharged using an exhaust mechanism (not shown), whereby the inside of the external chamber including the inside of the crucible 1 is evacuated, and the upper and lower resistance heaters are energized. The crucible 1 is heated to a predetermined temperature by heating the crucible 1 with the radiant heat. At this time, a temperature difference is generated by the heater by changing the power of energization to each heater.

  Subsequently, for example, an inert gas (Ar gas or the like), hydrogen, or a mixed gas such as nitrogen serving as a dopant to the crystal is introduced. This inert gas is discharged via the exhaust pipe. And the temperature of the growth surface of the seed crystal 40 and the temperature of the powder raw material 50 are raised to the target temperature. For example, when the growth crystal is 4H—SiC, the temperature of the powder raw material 50 is 2100 to 2300 ° C., and the temperature of the growth crystal surface is lower by about 10 to 200 ° C.

  For example, an inert gas (Ar gas or the like), hydrogen, or a mixed gas such as nitrogen serving as a dopant to the crystal flows into the heating chamber. This inert gas is discharged via the exhaust pipe. Until the temperature of the growth surface of the seed crystal 40 and the temperature of the SiC powder raw material 50 are raised to the target temperature, the atmosphere in the heating chamber is set to an atmospheric pressure close to atmospheric pressure to suppress sublimation from the powder raw material 50 and reach the target temperature. The pressure is reduced to a predetermined atmospheric pressure. For example, when the growth crystal is 4H—SiC, the temperature of the powder raw material 50 is 2100 to 2300 ° C., the temperature of the growth crystal surface is lower by about 10 to 200 ° C., and the atmospheric pressure is 13.33 to 2666 Pa. And

  Thus, the powder raw material 50 is sublimated by heating the powder raw material 50, and sublimation gas is generated from the powder raw material 50. The sublimation gas passes through the growth space region 60 and is supplied to the seed crystal 40.

  Thus, when the sublimation gas is supplied to the growth space region 60, the sublimation gas is sprayed not only on the growing SiC single crystal 70 but also on the shielding portion 23. Thereby, as shown in FIG. 1, SiC polycrystal 45 grows on support plate 23 a on the SiC single crystal 70 side of cylindrical portion 23 b of shielding portion 23. Similarly, when the sublimation gas reaches the cover material 22, the polycrystal 45 grows on the cover material 22.

  However, in the space 23e between the cylindrical part 23b of the shielding part 23 and the inner wall of the side wall part 21, the partition plate 23c attached to the cylindrical part 23b of the shielding part 23 prevents the sublimation gas from flowing into the space 23e. Is done. For this reason, a polycrystal is not formed in the space 23e. According to this, the heat of the side wall part 21 heated by the resistance heater is not transmitted to the cylindrical part 23b of the shielding part 23 by the polycrystal that would grow without the partition plate 23c, and the cylindrical part 23b The temperature gradient between the center axis of the crucible 1 does not increase. That is, the growth space region 60 surrounded by the cylindrical portion 23b is kept soaked.

  Therefore, in the growth space region 60, the temperature in the vicinity of the central axis of the crucible 1 and the temperature in the vicinity of the cylindrical portion 23b are kept substantially the same, so that the diameter expansion of the SiC single crystal 70 and the progress of the convex growth are suppressed. As a result, the SiC single crystal 70 is not distorted, and cracking of the SiC single crystal 70 can be prevented.

  As described above, in this embodiment, the partition plate 23c is provided at the opening end of the cylindrical portion 23b of the shielding portion 23 constituting the lid body 20, and the inner wall of the side wall portion 21 constituting the lid body 20 by the partition plate 23c. The sublimation gas is prevented from flowing into the space 23e between the cylindrical portion 23b and the cylindrical portion 23b.

  Thereby, it is possible to prevent the polycrystal from growing in the space 23e, and to prevent the side wall portion 21 from transferring heat received from the resistance heater to the cylindrical portion 23b by suppressing the growth of the polycrystal in the space 23e. be able to. That is, it is possible to prevent a temperature gradient from increasing between the cylindrical portion 23 b and the central axis of the crucible 1 in the growth space region 60. That is, the growth space region 60 surrounded by the cylindrical portion 23b can be maintained soaking.

  As described above, since the growth space region 60 can be kept soaking, it is possible to prevent a difference in the growth rate of the SiC single crystal 70 in the radial direction of the crucible 1, and the convex growth of the SiC single crystal 70. Can be suppressed. Therefore, distortion of SiC single crystal 70 can be suppressed, and as a result, cracking of SiC single crystal 70 can be prevented.

(Second Embodiment)
In the present embodiment, only different parts from the first embodiment will be described. In the said 1st Embodiment, although the outer peripheral end of the partition plate 23c is in contact with the inner wall of the side wall part 21, in this embodiment, the said outer peripheral end is separated from the inner wall of the side wall part 21. .

  FIG. 2 shows a cross-sectional configuration of the lid 20 of the SiC single crystal manufacturing apparatus according to the second embodiment of the present invention. As shown in this figure, a gap 23 h is provided between the outer peripheral end 23 g of the partition plate 23 c and the inner wall of the side wall portion 21. Due to the gap 23h, the space 23e formed by the shielding part 23 and the side wall part 21 is connected to the inside of the container body 10.

  By providing such a gap 23h, when the SiC single crystal 70 is grown, the air in the space 23e can be easily discharged outside the crucible 1 when the crucible 1 is evacuated. That is, the space 23e is hermetically sealed by the partition plate 23c, thereby preventing the air in the space 23e from expanding without being discharged to the outside of the crucible 1 during evacuation, thereby preventing the crucible 1 from being destroyed. Can do. The gap 23h is desirably 0.5 mm or less, and if it is too large, a polycrystal will grow in the space 23e.

(Third embodiment)
In the present embodiment, only different portions from the above embodiments will be described. In the second embodiment, the space 23e formed by the shielding portion 23 and the side wall portion 21 is connected to another space by a gap 23h between the outer peripheral end of the partition plate 23c and the inner wall of the side wall portion 21. However, the present embodiment is characterized in that the space 23e is connected to another space by providing a through hole in the shielding portion 23.

  FIG. 3 shows a cross-sectional configuration of the lid 20 of the SiC single crystal manufacturing apparatus according to the third embodiment of the present invention. As shown in this figure, the outer peripheral end 23 g of the partition plate 23 c is in contact with the inner wall of the side wall portion 21. And the through-hole 23i which penetrates the support plate 23a is provided in the part which comprises the space 23e among the support plates 23a of the shielding part 23. As shown in FIG.

  The through hole 23 i serves to connect the space 23 e formed by the shielding portion 23 and the side wall portion 21 with the space in the crucible 1. The through hole 23i can facilitate the discharge of the air in the space 23e to the outside of the crucible 1 when the crucible 1 is evacuated. As for the through hole 23i, a 1 mm hole is arranged every 30 ° this time, but the hole diameter is desirably 0.5 mm or more. If the hole diameter is too small, drilling is difficult. If too large or too large, the influence on the temperature distribution is ignored. become unable.

(Fourth embodiment)
In the present embodiment, only different parts from the third embodiment will be described. In the third embodiment, the through hole 23i is provided in the support plate 23a of the shielding part 23 in order to allow the air in the space 23e to escape. However, in the present embodiment, the through hole is provided in the side wall part 21. ing.

  FIG. 4 shows a cross-sectional configuration of the lid 20 of the SiC single crystal manufacturing apparatus according to the fourth embodiment of the present invention. As shown in this figure, the outer peripheral end 23 g of the partition plate 23 c is in contact with the inner wall of the side wall portion 21. The side wall 21 is provided with a through hole 23j that passes through the side wall 21.

  A space 23e formed by the shielding portion 23 and the side wall portion 21 is connected to the outside of the crucible 1 by the through hole 23j. Thereby, the air in the space 23e can be easily released to the outside of the crucible 1. As for the through hole 23j, a 1 mm hole is arranged every 30 ° this time, but the hole diameter is desirably 0.5 mm or more. If the hole diameter is too small, drilling is difficult, and if it is too large or too large, the influence on the temperature distribution is ignored. become unable.

(Fifth embodiment)
In the present embodiment, only different portions from the above embodiments will be described. The present embodiment is characterized in that a heat insulating member is provided in the space 23e formed by the shielding portion 23 and the side wall portion 21 in order to prevent a temperature gradient from occurring in the growth space region 60.

  FIG. 5 shows a cross-sectional configuration of the lid 20 of the SiC single crystal manufacturing apparatus according to the fifth embodiment of the present invention. As shown in this figure, a heat insulating member 23k is disposed in the space 23e. In the present embodiment, the heat insulating member 23k is provided in contact with the cylindrical portion 23b of the shielding portion 23. For example, a carbon material is employed as the heat insulating member 23k.

  The heat insulating member 23k functions to suppress transmission of heat applied to the crucible 1 to the growth space region 60. Thereby, the effect can be further increased so that the temperature gradient in the radial direction of the crucible 1 in the growth space region 60 does not increase, and soaking can be maintained.

(Other embodiments)
In the first embodiment, the partition plate 23c is arranged in parallel to a plane perpendicular to the central axis of the crucible 1, but the arrangement of the partition plate 23c is not limited to this, for example, the partition plate in the central axis direction of the crucible 1. You may arrange | position so that the outer peripheral end of 23c may be located in the container main body 10 side rather than an inner peripheral end.

  The heat insulating member 23k shown in the fifth embodiment can also be employed in the lid body 20 shown in the first to fourth embodiments.

  In 5th Embodiment, although the heat insulation member 23k is arrange | positioned so that the cylindrical part 23b of the shielding part 23 may be contacted, it does not need to be in contact with the cylindrical part 23b, and as long as it is arrange | positioned in the space 23e, it may be anywhere. Absent.

It is a section lineblock diagram of the SiC single crystal manufacturing device concerning a 1st embodiment of the present invention. It is a cross-sectional block diagram of the cover body of the SiC single crystal manufacturing apparatus concerning 2nd Embodiment of this invention. It is a cross-sectional block diagram of the cover body of the SiC single crystal manufacturing apparatus concerning 3rd Embodiment of this invention. It is a cross-sectional block diagram of the cover body of the SiC single crystal manufacturing apparatus concerning 4th Embodiment of this invention. It is a cross-sectional block diagram of the cover body of the SiC single crystal manufacturing apparatus concerning 5th Embodiment of this invention. It is a typical cross-section figure of the conventional SiC single crystal manufacturing apparatus.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Crucible, 10 ... Container main body, 20 ... Lid body, 21 ... Side wall part, 22 ... Lid material, 23 ... Shielding part, 23a ... Supporting plate, 23b ... Cylindrical part, 23c ... Partition plate, 23d ... Window part, 23e ... space, 23g ... other end, 23h ... gap, 23i, 23j ... through hole, 23k ... heat insulating member, 30 ... connecting portion, 40 ... seed crystal, 50 ... powder material, 60 ... growth space region, 70 ... SiC single crystal .

Claims (10)

A hollow cylindrical crucible (1) having a bottomed cylindrical container body (10) and a lid (20) for closing the container body (10); By disposing a seed crystal (40) made of a silicon carbide substrate in (20) and disposing a silicon carbide raw material (50) in the container body (10) and supplying a sublimation gas of the silicon carbide raw material (50). In the silicon carbide single crystal manufacturing apparatus for growing the silicon carbide single crystal (70) on the seed crystal (40),
The lid (20)
A hollow cylindrical side wall (21);
The side wall portion (40) is plate-shaped, and the seed crystal (40) is disposed on one surface side of the plate, and the seed crystal (40) is accommodated in a hollow portion of the side wall portion (21). 21) a lid member (22) attached to one of the open ends;
A support plate (23a) having a plate-like shape and having a through window (23d) into which the seed crystal (40) is inserted, and a side surface of the plate being integrated with an inner wall of the side wall (21). )When,
A hollow cylinder having a diameter smaller than the inner wall of the side wall (21) is formed, and a hollow portion of the hollow cylinder is used as a growth space region (60) to supply the sublimation gas, A cylindrical portion (23b) in which one of the open ends of the hollow cylinder is integrated with a surface of the support plate (23a) opposite to the surface facing the lid member (22);
An inner peripheral end of the doughnut-shaped portion that suppresses the sublimation gas from flowing into the space (23e) between the inner wall of the side wall portion (21) and the outer wall of the cylindrical portion (23b). Is integrated with the other open end of the cylindrical part (23b), and the outer peripheral end of the donut part has a partition plate (23c) arranged on the inner wall side of the side wall part (21). An apparatus for producing a silicon carbide single crystal characterized. The outer peripheral end (23g) of the partition plate (23c) is not in contact with the inner wall of the side wall portion (21), and is between the outer peripheral end of the partition plate (23c) and the inner wall of the side wall portion (21). The apparatus for producing a silicon carbide single crystal according to claim 1, wherein a gap (23h) is provided. An outer peripheral end (23g) of the partition plate (23c) is in contact with an inner wall of the side wall portion (21), and the support plate (23a) includes the support plate (23a) and the lid member (22). The through hole (23i) which connects the space between and the space (23e) between the side wall part (21) and the cylindrical part (23b) is provided. Silicon carbide single crystal production equipment. An outer peripheral end (23g) of the partition plate (23c) is in contact with an inner wall of the side wall portion (21), and the side wall portion (21) includes the side wall portion (21) and the cylindrical portion (23b). The apparatus for producing a silicon carbide single crystal according to claim 1, further comprising a through hole (23j) that connects the space (23e) between the space and the outside of the crucible (1). The heat insulating member (23k) is disposed in the space (23e) between the side wall (21) and the cylindrical portion (23b), according to any one of claims 1 to 4. An apparatus for producing a silicon carbide single crystal. A hollow cylindrical crucible (1) having a bottomed cylindrical container body (10) and a lid (20) for closing the container body (10); By disposing a seed crystal (40) made of a silicon carbide substrate in (20) and disposing a silicon carbide raw material (50) in the container body (10) and supplying a sublimation gas of the silicon carbide raw material (50). In the method for producing a silicon carbide single crystal, the silicon carbide single crystal (70) is grown on the seed crystal (40).
As the lid (20),
A hollow cylindrical side wall (21);
It is plate-shaped, and the side wall portion (40) is disposed on one side of the plate and the seed crystal (40) is accommodated in a hollow portion of the side wall portion (21). 21) a lid member (22) attached to one of the open ends;
A support plate (23a) having a plate-like shape and having a through window (23d) into which the seed crystal (40) is inserted, and a side surface of the plate being integrated with an inner wall of the side wall (21). )When,
A hollow cylinder having a diameter smaller than the inner wall of the side wall (21) is formed, and a hollow portion of the hollow cylinder is used as a growth space region (60) to supply the sublimation gas, A cylindrical portion (23b) in which one of the open ends of the hollow cylinder is integrated with a surface of the support plate (23a) opposite to the surface facing the lid member (22);
An inner peripheral end of the doughnut-shaped portion that suppresses the sublimation gas from flowing into the space (23e) between the inner wall of the side wall portion (21) and the outer wall of the cylindrical portion (23b). Is prepared to be integrated with the other open end of the cylindrical portion (23b), and the outer peripheral end of the donut portion has a partition plate (23c) disposed on the inner wall side of the side wall portion (21).
After the silicon carbide raw material (50) is arranged in the container body (10) and the container body (10) is closed with the lid body (20) to form the crucible (1), the crucible ( 1) is heated to generate the sublimation gas from the silicon carbide raw material (50), and the sublimation gas is supplied to the growth space region (60), whereby the silicon carbide single crystal is added to the seed crystal (40). A method for producing a silicon carbide single crystal, comprising growing a crystal (70). As the lid (20), the outer peripheral end (23g) of the partition plate (23c) is not in contact with the inner wall of the side wall (21), and the outer peripheral end (23g) of the partition plate (23c) The method for producing a silicon carbide single crystal according to claim 6, wherein a device having a gap (23 h) provided between the side wall portion (21) and the inner wall is prepared. As the lid (20), an outer peripheral end (23g) of the partition plate (23c) is in contact with an inner wall of the side wall portion (21), and the support plate (23a) includes the support plate (23a) and the support plate (23a). Prepare one provided with a through hole (23i) that connects the space between the lid member (22) and the space (23e) between the side wall portion (21) and the cylindrical portion (23b). The method for producing a silicon carbide single crystal according to claim 6. As the lid (20), an outer peripheral end (23g) of the partition plate (23c) is in contact with an inner wall of the side wall (21), and the side wall (21) includes the side wall (21) and The thing provided with the through-hole (23j) which connects the said space (23e) between the said cylindrical parts (23b) and the exterior of the said crucible (1) is prepared. A method for producing a silicon carbide single crystal. The lid (20) is prepared by arranging a heat insulating member (23k) in the space (23e) between the side wall (21) and the cylindrical part (23b). Item 10. A method for producing a silicon carbide single crystal according to any one of Items 6 to 9.

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