JP2009021595A - Rework method - Google Patents

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JP2009021595A
JP2009021595A JP2008177952A JP2008177952A JP2009021595A JP 2009021595 A JP2009021595 A JP 2009021595A JP 2008177952 A JP2008177952 A JP 2008177952A JP 2008177952 A JP2008177952 A JP 2008177952A JP 2009021595 A JP2009021595 A JP 2009021595A
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electronic component
adhesive
circuit
connection
connecting member
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Isao Tsukagoshi
功 塚越
Yukihisa Hirozawa
幸寿 廣澤
Koji Kobayashi
宏治 小林
Nobukazu Koide
遵一 小出
Yasushi Goto
泰史 後藤
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Showa Denko Materials Co Ltd
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Hitachi Chemical Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/98—Methods for disconnecting semiconductor or solid-state bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
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    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01049—Indium [In]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01054—Xenon [Xe]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01075—Rhenium [Re]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
    • H01L2924/07811—Extrinsic, i.e. with electrical conductive fillers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a rework method of an electronic component by adhesive packaging, which can perform stripping work even in a minute space without having a significant effect on other peripheral joints. <P>SOLUTION: The rework method of an electronic component sets the threshold of adhesive smaller than that of a circuit 4 when stripping the electronic component 2 connected electrically with the circuit 4 on a substrate 1 by adhesive, removes the electronic component 2 together with a connection member 3 by irradiating the side face of the electronic component 2 with excimer laser 6, and then connects the electronic component 2 electrically again to the stripped part using adhesive. If the residual connection member 3 exists when the electronic component 2 is stripped, the surface of the connection member 3 is irradiated with excimer laser 6 and the electronic component 2 is connected electrically again to the stripped part using adhesive. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、電子部品と回路板や、回路板同士を接着固定した接続部のリワーク方法に関する。   The present invention relates to an electronic component and a circuit board, and a reworking method for a connection part in which circuit boards are bonded and fixed.

近年、電子部品の小型薄型化に伴い、これらに用いる回路は高密度、高精細化している。このような電子部品と微細電極の接続は、従来のハンダやゴムコネクタ等では対応が困難であることから、最近では接着剤による方法が多用されるようになってきた。この場合、接着剤中に導電粒子等の導電材料を所定量配合し加圧または加熱加圧により厚み方向に電気的接続を得るもの（例えば特開昭５５−１０４００７号公報）と、導電粒子を用いないで接続時の加圧により電極面同士の接触により電気的接続を得るもの（例えば特開昭６０−２６２４３０号公報）が知られている。最近ではより微細化のために、導電粒子の表面を絶縁処理したり、導電粒子含有層と絶縁性接着剤の複層構成とする試みもある。
これらの接着剤や膜状物による接続部材を用いた接続において、電気的接続が不良であったり、接続後に電子部品や回路が不良であった場合、接続部間を剥離し、残った接着剤を例えば溶剤や剥離液で除去洗浄した後、再度良品を接着剤により接続する（以下リワークという）ことが求められる。
特開昭５５−１０４００７号公報 特開昭６０−２６２４３０号公報 In recent years, with the miniaturization and thinning of electronic components, circuits used for these have become denser and higher definition. Since it is difficult to connect such electronic components and fine electrodes with conventional solders, rubber connectors, or the like, recently, an adhesive method has been frequently used. In this case, a predetermined amount of a conductive material such as conductive particles is mixed in the adhesive, and electrical connection is obtained in the thickness direction by pressurization or heating and pressurization (for example, JP-A-55-104007), and conductive particles are used. There is known one that obtains electrical connection by contact between electrode surfaces by pressurization during connection without using it (for example, JP-A-60-262430). Recently, for further miniaturization, there are attempts to insulate the surface of the conductive particles or to form a multilayer structure of the conductive particle-containing layer and the insulating adhesive.
In the connection using these adhesives and connection members made of film-like materials, if the electrical connection is poor or the electronic component or circuit is bad after the connection, the connection part is peeled off and the remaining adhesive For example, after removing and washing the substrate with a solvent or a stripping solution, it is required to connect the good product again with an adhesive (hereinafter referred to as rework).
Japanese Patent Laid-Open No. 55-104007 JP 60-262430 A

このとき例えば、液晶ディスプレイパネルのような多数の回路を有する一つの電子部品に、例えばＩＣチップのような多数の他の電子部品を接続する場合、前述の接着剤除去法では、周辺部の他の接続部にまで影響し、接続不良や信頼性が低下する問題があった。この場合、リワークを行わないと１個の不良ＩＣチップのためにパネル全体が不良となってしまうので、リワーク性が重要視される。また例えばＣＯＢ（チップオンボード）やＭＣＭ（マルチチップモジュール）等のＩＣチップは、隣接する電子部品との間隔が０．５ｍｍ程度以下と密接形成される場合が多く、剥離のための治具さえ入らない場合が多く、適当な剥離方法さえない状況となっている。   At this time, for example, when a large number of other electronic components such as an IC chip are connected to a single electronic component having a large number of circuits such as a liquid crystal display panel, the above-mentioned adhesive removal method is used to remove other peripheral parts. There is a problem in that the connection portion is affected and the connection is poor and the reliability is lowered. In this case, if the rework is not performed, the whole panel becomes defective due to one defective IC chip, so reworkability is regarded as important. In addition, for example, IC chips such as COB (chip on board) and MCM (multi chip module) are often formed in close contact with an adjacent electronic component of about 0.5 mm or less. In many cases, it does not enter, and there is no appropriate peeling method.

さらに、このような用途に使用される接着剤は、接続信頼性に優れることから、熱や紫外線等による硬化型が多用され、その場合の一般的な剥離方法は、高温下で接着剤の凝集力を低下させた状態で機械的に剥離するが、この場合も周辺部の他の接続部にまで影響し、熱による損傷から接続不良を与えやすい。加えて、ＩＣチップのような電子部品の周囲にはみ出した接着剤は、スペースの少ないことや強引な機械的剥離では、回路が損傷する等のため上記方法では剥離されずに、基板回路上に残ってしまいリワーク時の障害となっている。
このようなことから、製品製造時におけるリワークが進まず接続作業性に劣ることから、コスト高の一因となっており、その改善が強く求められている。
本発明は、上記欠点に鑑みなされたもので、周辺部の他の接続部に影響を及ぼし難く、微小なスペース部分に於いても剥離作業が可能な、接着剤実装による電子部品のリワーク方法に関する。 Furthermore, since the adhesive used for such applications is excellent in connection reliability, a curing type by heat, ultraviolet rays or the like is often used. In this case, the general peeling method is agglomeration of the adhesive at a high temperature. Although it peels mechanically in a state where the force is reduced, this also affects other connecting portions in the peripheral portion, and is liable to cause poor connection due to damage due to heat. In addition, the adhesive that protrudes around the electronic component such as an IC chip is not peeled off by the above method due to the fact that the circuit is damaged due to the lack of space or forced mechanical peeling. It remains and becomes an obstacle at the time of rework.
For this reason, rework during product manufacturing does not proceed and connection workability is inferior, which contributes to high costs, and there is a strong demand for improvement.
The present invention has been made in view of the above-mentioned drawbacks, and relates to a method for reworking an electronic component by adhesive mounting, which is unlikely to affect other connection portions in the peripheral portion and can be peeled even in a minute space portion. .

本発明は、接着剤で基板上の回路と電気的に接続された電子部品を剥離する際に、前記回路よりも接着剤のスレッシュホールド値を小さくし、エキシマレーザーをＩＣチップの側面に照射することによりチップを接続部材ともに除去し、剥離した部位に再度接着剤を用いて電子部品を電気的に接続することを特徴とする電子部品のリワーク方法である。また、接着剤で基板上の回路と接続された電子部品を剥離する際に、エキシマレーザーを電子部品の側面に照射することにより電子部品を接続部材とともに除去し、剥離した電子部品の残留した接続部材面にエキシマレーザーを照射し、剥離した部位に再度接着剤を用いて電子部品を電気的に接続することを特徴とする電子部品のリワーク方法である。   In the present invention, when peeling an electronic component electrically connected to a circuit on a substrate with an adhesive, the threshold value of the adhesive is made smaller than that of the circuit, and an excimer laser is irradiated to the side surface of the IC chip. In this method, the chip is removed together with the connecting member, and the electronic component is electrically connected to the peeled portion again using an adhesive. In addition, when peeling an electronic component connected to a circuit on a substrate with an adhesive, the electronic component is removed together with a connecting member by irradiating the side of the electronic component with an excimer laser, and the remaining electronic component remains connected An electronic component rework method comprising irradiating an excimer laser on a member surface and electrically connecting the electronic component to the peeled portion again using an adhesive.

本発明によれば、周辺部の他の接続部に熱の影響を及ぼし難く、微小部分に於いても剥離作業が可能な剥離方法を提供できる。そのため、リワーク性が向上し接着剤を用いた接続作業性が向上する。   ADVANTAGE OF THE INVENTION According to this invention, the peeling method which does not affect the other connection part of a peripheral part easily and can perform the peeling operation | work in a micro part can be provided. Therefore, reworkability is improved and connection workability using an adhesive is improved.

本発明を図面を参照にしながら説明する。
図１〜４は、本発明の一実施例を説明するリワーク方法の断面模式図であり、基板１と剥離を要する電子部品２を接続部材３を用いて接続してある。
基板１としては、ポリイミドやポリエステル等のプラスチックフィルム、ガラス・エポキシ等の複合体、シリコーン等の半導体、ガラスやセラミックス等の無機物があり、必要により接着剤を介して、接続面に回路もしくは電極等の接続端子（図略）を有する。 The present invention will be described with reference to the drawings.
1 to 4 are schematic cross-sectional views of a reworking method for explaining an embodiment of the present invention, in which a substrate 1 and an electronic component 2 that requires peeling are connected using a connecting member 3.
Examples of the substrate 1 include plastic films such as polyimide and polyester, composites such as glass and epoxy, semiconductors such as silicone, and inorganic materials such as glass and ceramics. If necessary, a circuit or an electrode is connected to the connection surface via an adhesive. Connection terminals (not shown).

電子部品２としては、半導体（ＩＣ）チップ類や前述の基板１などがある。
接続部材３は、接着剤中に導電粒子等の導電材料を所定量配合し、加圧または加熱加圧により厚み方向に電気的接続を得る異方導電接着剤や、導電材料により全方向に導電性を得るもの、あるいは導電粒子を用いないで接続時の加圧により電極面同士の接触により、電気的接続を得るもの等のいずれでも良く、これらはまた、液状物でもフィルム等の膜状物を用いて接続したものでも良い。
接続部材３の主成分である接着剤は、熱可塑性や、熱や光により硬化性を示す材料が広く適用できる。例示するとエポキシ、シアノエステル、ポリイミド、シリコーン、ポリエステル等の各系があり、これらは２種以上複合しても使用できる。中でもエポキシ系接着剤は、短時間硬化が可能で接続作業性が良く、分子構造上接着性に優れるので特に好ましく適用できる。 Examples of the electronic component 2 include semiconductor (IC) chips and the substrate 1 described above.
The connecting member 3 includes a predetermined amount of a conductive material such as conductive particles in the adhesive, and conducts in all directions with an anisotropic conductive adhesive that obtains electrical connection in the thickness direction by pressing or heating and pressing, or a conductive material. It may be any one that obtains electrical properties, or one that obtains electrical connection by contact between electrode surfaces by pressurization without using conductive particles, and these may also be liquid or film-like materials such as films It may be connected using.
As the adhesive that is the main component of the connecting member 3, a material that exhibits thermoplasticity or is curable by heat or light can be widely applied. For example, there are systems such as epoxy, cyanoester, polyimide, silicone, polyester, etc., and these can be used in combination of two or more. Among these, epoxy adhesives can be applied particularly preferably because they can be cured in a short time, have good connection workability, and have excellent molecular adhesion.

図１〜４の接続構造の代表例として例えば、電子部品２をＩＣチップとし、基板１としてＩＴＯ（酸化インジウム）回路４を有するガラス基板、接続部材３は異方導電接着剤の組み合わせであるＣＯＧがある。
図１（ａ）において、剥離を必要とする電子部品２がガラス基板１に、接続部材３で接続されている。電子部品２のバンプ５は必要に応じて存在できる。
図１（ｂ）は、電子部品２が除去された状態を示し、電子部品２の下面の接続部材３は基板１には殆ど残らず剥離されているが、電子部品２の側面の接続部材３が基板１に残っている様子を示す。
ここで電子部品２の除去方法としては、加熱により接続部材３の凝集力を低下させて剥離する方法でも良いが、周辺の電子部品に熱損傷を及ぼしやすいことから、我々の先行する発明である駆動下で剪断剥離する装置（特願平７−１３５３６０）による方法が、狭スペース部でも除去可能なことから好適である。 1-4, for example, the electronic component 2 is an IC chip, a glass substrate having an ITO (indium oxide) circuit 4 as the substrate 1, and the connection member 3 is a combination of anisotropic conductive adhesives. There is.
In FIG. 1A, an electronic component 2 that requires peeling is connected to a glass substrate 1 by a connecting member 3. The bumps 5 of the electronic component 2 can exist as necessary.
FIG. 1B shows a state in which the electronic component 2 is removed, and the connection member 3 on the lower surface of the electronic component 2 is peeled off almost completely on the substrate 1, but the connection member 3 on the side surface of the electronic component 2. Is shown on the substrate 1.
Here, the method for removing the electronic component 2 may be a method in which the cohesive force of the connecting member 3 is reduced by peeling to peel off, but it is a prior invention of the present invention because it easily causes thermal damage to the surrounding electronic components. A method using a device for shearing peeling under driving (Japanese Patent Application No. 7-135360) is preferable because it can be removed even in a narrow space portion.

図１（ｃ）は、基板１に残った接続部材３に、レーザ光６を照射して、接続部材３を除去している様子を示す。図示してない電子部品２の下面部分の接続部材３が残留した場合も、同様にレーザ光６を照射して除去できる。
レーザ光６は、炭酸ガスやＹＡＧによるものでも接続部材３が除去可能であれば適用可能であるが、エキシマによるものが短波長で高出力であり、低温プロセスとできることから好適である。エキシマの中では、Ｋｒ−Ｆ（発振波長２４８ｎｍ）や、Ａｒ−Ｆ（同１９３ｎｍ）、Ｘｅ−Ｂｒ（同２８２ｎｍ）、Ｋｒ−Ｃｌ（同２２２ｎｍ）、Ａｒ−Ｃｌ（同１７５ｎｍ）、Ｆ−Ｆ（同１５７ｎｍ）等が適用可能であり、これらは接続部材を構成する接着剤成分の主要な結合エネルギーと発振波長（１５０〜３５０ｎｍ）の関係に注目して、なるべく両者の波長を近づけることが好ましい。
ここでまた、接着剤除去部の回路を破壊しないことも重要であり、そのためにはスレッシュホールド値（結合エネルギーの分解のしきい値）に注目して、回路のスレッシュホールド値よりも接着剤を小さくすることが好ましい。
エキシマレーザによる光化学反応は、基本的に熱を伴わないので炭化等の熱変質がないことから残留物の処理が簡単であり、また周辺の電子部品に熱損傷を与えない特徴がある。 FIG. 1C shows a state in which the connection member 3 remaining on the substrate 1 is irradiated with the laser beam 6 to remove the connection member 3. Even when the connection member 3 on the lower surface portion of the electronic component 2 (not shown) remains, it can be similarly removed by irradiating the laser beam 6.
The laser beam 6 can be applied even if it is carbon dioxide gas or YAG as long as the connecting member 3 can be removed, but the excimer is suitable because it has a short wavelength and high output and can be a low-temperature process. Among excimers, Kr-F (oscillation wavelength 248 nm), Ar-F (193 nm), Xe-Br (282 nm), Kr-Cl (222 nm), Ar-Cl (175 nm), FF (Approx. 157 nm), etc. are applicable, and it is preferable to pay close attention to the relationship between the main binding energy of the adhesive component constituting the connecting member and the oscillation wavelength (150 to 350 nm), and to make both wavelengths as close as possible. .
Here, it is also important not to break the circuit of the adhesive removal part. For that purpose, pay attention to the threshold value (threshold of decomposition of the binding energy), and use the adhesive rather than the threshold value of the circuit. It is preferable to make it small.
The photochemical reaction by the excimer laser basically has no characteristics of heat, so that there is no thermal alteration such as carbonization, so that the treatment of the residue is simple, and there is a feature that the surrounding electronic parts are not thermally damaged.

図２（ａ）は、電子部品２を除去する前に電子部品２の側面にレーザ光６を照射してはみ出した接続部材を劣化もしくは除去させた後に、図２（ｂ）のように電子部品２を接続部材３と共に除去している様子を示す。この場合も良好にリワーク可能である。
図３は、多数の例えばＩＣチップのような電子部品２が密集して存在する場合であるが、エキシマレーザ光６は、光束がせまい上、レンズで集光することやマスクで必要面積とすることも可能なので、数μｍといった極めてごく小面積の狭スペース部でも接続部材を除去可能である。
図４は、図１〜３のように剥離した電子部品２に残留した接続部材３面にレーザ光６を照射し除去している。 FIG. 2 (a) shows an electronic component as shown in FIG. 2 (b) after deteriorating or removing the protruding connection member by irradiating the side surface of the electronic component 2 with laser light 6 before removing the electronic component 2. FIG. 2 shows a state where 2 is removed together with the connecting member 3. Also in this case, rework can be performed well.
FIG. 3 shows a case where a large number of electronic components 2 such as IC chips are densely packed, but the excimer laser beam 6 is focused by a lens or has a required area by a mask because the luminous flux is narrow. Therefore, it is possible to remove the connecting member even in a very small area having a very small area such as several μm.
In FIG. 4, the surface of the connecting member 3 remaining on the peeled electronic component 2 as shown in FIGS.

本発明は、剥離を要する接続部材もしくは接着剤に、エキシマレーザーを照射して劣化除去し、再度接着剤により接続するものである。
本発明に用いるエキシマレーザーは、短波長で高出力であり低温プロセスである。そのため、基本的に熱を伴わないので炭化等の熱変質がなく、また周辺の電子部品に熱損傷を与えない。そのため、リワークが極めて容易である。
エキシマレーザーは、高分子を簡単に劣化することが可能であり、回路は金属であることから劣化しにくいので、高分子のみを選択的に劣化させ除去可能であるが、次に述べる事柄を配慮すると適用範囲が拡大するのでより好ましい。
すなわち、エキシマレーザーの波長は、接続部材を構成する接着剤の主要結合エネルギーと発振波長（１５０〜３５０ｎｍ）の関係に注目して選定することや、加えてスレッシュホールド値（結合エネルギーの分解のしきい値）を回路よりも接着剤を小さくすることや照射回数、接着剤除去部の回数が破壊しないこと等である。
また、エキシマレーザー光は、光束がせまい上、レンズで集光することやマスクで必要面積とすることも可能なので、微小スペース部分に於いても剥離作業が簡単容易であり、周辺の電子部品に熱損傷を与えない。 In the present invention, a connecting member or adhesive that requires peeling is irradiated with an excimer laser to be removed by degradation, and then connected again using an adhesive.
The excimer laser used in the present invention is a low temperature process with a short wavelength and high output. Therefore, basically no heat is involved, so there is no thermal alteration such as carbonization, and the surrounding electronic components are not thermally damaged. Therefore, rework is extremely easy.
The excimer laser can easily degrade the polymer and the circuit is hard to degrade because it is a metal, so it can selectively degrade and remove the polymer. Then, since an application range expands, it is more preferable.
That is, the wavelength of the excimer laser is selected by paying attention to the relationship between the main binding energy of the adhesive constituting the connecting member and the oscillation wavelength (150 to 350 nm), and in addition, the threshold value (decomposition of the binding energy) is selected. That is, the adhesive is made smaller than the circuit, the number of times of irradiation, and the number of times the adhesive is removed are not destroyed.
In addition, excimer laser light can be focused with a lens or with a mask to reduce the luminous flux and can be made the required area with a mask. Does not cause thermal damage.

以下、実施例でさらに詳細に説明するが、本発明はこれに限定されない。
実施例１
（１）接続体
試験用ＩＣチップ（１．５×１５ｍｍ、厚み０．５５ｍｍ、長片側端部近傍にバンプとよばれる１００μｍ角、高さ１５μｍの金電極が２００個形成）を、ガラス厚み０．７ｍｍ上に、酸化インジウムの厚み０．２μｍの薄膜回路をバンプに対応させて形成（ＩＴＯ、表面抵抗２０Ω／□）し、両者を接続部材により接続した。ガラスの薄膜回路は、バンプ対応部から外方向に延出し、接続抵抗が測定可能となっている。
接続部材は、粒径±０．１μｍのポリスチレン系粒子にＮｉ／Ａｕの厚さ０．２／０．０２μｍの金属被覆を形成した導電粒子をエポキシ樹脂系接着剤に５体積％分散した、幅２ｍｍのテープ状接着剤（接着剤のガラス転移点は１３５℃）である。接続は、１７０℃、２０ｇ／バンプ、２０秒で行った。
（２）ＩＣチップの剥離
我々の先行する発明である駆動下で剪断剥離する装置（特願平７−１３５３６０）による方法で、ＩＣチップの剥離を行った。すなわち、装置付属のヘッドによりＩＣチップを２００℃に加熱加圧し、テーブルを０．５ｍｍ駆動させて剥離した。剥離部は、図１のようにＩＣチップの下面の接続部材はガラス基板に殆ど残らず剥離されていたが、ＩＣチップの側面（周囲）に当たる部分のガラス基板に接続部材が残っていた。
（３）レーザ照射
Ｋｒ−Ｆ（発振波長２４８ｎｍ）レーザを、６５ｍＪ／ｃｍ2 （パルス幅２０μｓ、パルス周波数１０Ｈｚ、５００回）でガラス基板の接続部材の残部に照射した。接続部材は若干変色し、アセトン含浸の綿棒により簡単に洗浄できた。ＩＴＯ回路は、変化が見られなかった。本実施例におけるスレッシュホールド値は、接続部材が１Ｊ／ｃｍ2 以下であり、ＩＴＯが約５Ｊ／ｃｍ2 であった。
（４）再接続
新しい正常な試験用ＩＣチップを、前記剥離洗浄部に（１）と同様にして再接続した。結果は良好に接続可能であった。 Hereinafter, although an Example demonstrates in detail, this invention is not limited to this.
Example 1
(1) Connected body Test IC chip (1.5 × 15 mm, thickness 0.55 mm, 200 gold electrodes of 100 μm square and 15 μm height called bumps are formed in the vicinity of the end on the long piece side), glass thickness 0 A thin film circuit having a thickness of 0.2 μm made of indium oxide was formed on 0.7 mm corresponding to the bumps (ITO, surface resistance 20Ω / □), and both were connected by a connecting member. The glass thin film circuit extends outward from the bump-corresponding portion, and the connection resistance can be measured.
The connecting member was formed by dispersing 5% by volume of conductive particles in which an Ni / Au metal coating having a thickness of 0.2 / 0.02 μm was formed on polystyrene particles having a particle diameter of ± 0.1 μm in an epoxy resin adhesive. It is a 2 mm tape adhesive (the glass transition point of the adhesive is 135 ° C.). The connection was performed at 170 ° C., 20 g / bump, and 20 seconds.
(2) Separation of IC chip The IC chip was peeled by a method using a device (Japanese Patent Application No. Hei 7-135360) that shears and peels under driving which is our preceding invention. That is, the IC chip was heated and pressurized to 200 ° C. with the head attached to the apparatus, and the table was driven by 0.5 mm to peel off. As shown in FIG. 1, the connection member on the lower surface of the IC chip was hardly left on the glass substrate as shown in FIG. 1, but the connection member remained on the glass substrate in a portion corresponding to the side surface (periphery) of the IC chip.
(3) Laser irradiation A Kr-F (oscillation wavelength 248 nm) laser was irradiated to the remaining part of the connecting member of the glass substrate at 65 mJ / cm 2 (pulse width 20 μs, pulse frequency 10 Hz, 500 times). The connecting member was slightly discolored and could be easily cleaned with an acetone-impregnated swab. The ITO circuit did not change. The threshold values in this example were 1 J / cm 2 or less for the connecting member and about 5 J / cm 2 for ITO.
(4) Reconnection A new normal test IC chip was reconnected to the peel cleaning section in the same manner as (1). The result was well connectable.

比較例１
実施例１と同様であるが、レーザー照射を行わなかった。アセトン含浸の綿棒で洗浄が不可能であり、再接続が不可能であった。 Comparative Example 1
Same as Example 1, but no laser irradiation. Cleaning with an acetone-impregnated swab was impossible and reconnection was impossible.

実施例２
実施例１と同様であるが、（３）と（４）の工程を入れ替えた。すなわち、図２で示した方法であり、ＩＣチップを除去する前にＩＣチップの側面にレーザを照射して、はみ出した接続部材を劣化させた後、ＩＣチップを接続部材と共に除去した。この場合も、周辺部の接着剤が劣化しており、剪断剥離の際に周辺部の接着剤も同時に除去でき再接続が可能であった。
本例は、実施例１に比べ製造工程内にレーザ装置があり、インラインで行う場合に特に有効と見られる。 Example 2
Although it is the same as that of Example 1, the process of (3) and (4) was replaced. That is, in the method shown in FIG. 2, before removing the IC chip, the side surface of the IC chip was irradiated with a laser to deteriorate the protruding connection member, and then the IC chip was removed together with the connection member. Also in this case, the adhesive at the peripheral portion was deteriorated, and the adhesive at the peripheral portion was removed at the same time during the shear peeling, and reconnection was possible.
Compared with Example 1, this example has a laser device in the manufacturing process and is particularly effective when performed in-line.

本発明の実施例を示すリワーク方法の断面模式図である。It is a cross-sectional schematic diagram of the rework method which shows the Example of this invention. 本発明の他の実施例を示すリワーク方法の断面模式図である。It is a cross-sectional schematic diagram of the rework method which shows the other Example of this invention. 本発明の他の実施例を示すリワーク方法の断面模式図である。It is a cross-sectional schematic diagram of the rework method which shows the other Example of this invention. 本発明の他の実施例を示すリワーク方法の断面模式図である。It is a cross-sectional schematic diagram of the rework method which shows the other Example of this invention.

符号の説明Explanation of symbols

１ 基板
２ 電子部品
３ 接続部材
４ 回路
５ バンプ
６ レーザ光 DESCRIPTION OF SYMBOLS 1 Board | substrate 2 Electronic component 3 Connection member 4 Circuit 5 Bump 6 Laser beam

Claims (2)

接着剤で基板上の回路と電気的に接続された電子部品を剥離する際に、前記回路よりも接着剤のスレッシュホールド値を小さくし、エキシマレーザーをＩＣチップの側面に照射することによりチップを接続部材とともに除去し、剥離した部位に再度接着剤を用いて電子部品を電気的に接続することを特徴とする電子部品のリワーク方法。   When peeling an electronic component electrically connected to a circuit on a substrate with an adhesive, the threshold value of the adhesive is made smaller than that of the circuit, and the side of the IC chip is irradiated with an excimer laser. A method for reworking an electronic component, characterized in that the electronic component is electrically connected to the part removed together with the connecting member and then peeled off again using an adhesive. 接着剤で基板上の回路と接続された電子部品を剥離する際に、エキシマレーザーを電子部品の側面に照射することにより電子部品を接続部材とともに除去し、剥離した電子部品の残留した接続部材面にエキシマレーザーを照射し、剥離した部位に再度接着剤を用いて電子部品を電気的に接続することを特徴とする電子部品のリワーク方法。   When peeling the electronic component connected to the circuit on the board with the adhesive, the side of the electronic component is irradiated with an excimer laser to remove the electronic component together with the connecting member, and the remaining connecting member surface of the peeled electronic component A method for reworking an electronic component, comprising: irradiating an excimer laser and electrically connecting the electronic component to the peeled portion again using an adhesive.
JP2008177952A 2008-07-08 2008-07-08 Rework method Pending JP2009021595A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019132486A1 (en) * 2017-12-27 2019-07-04 주식회사 엘지화학 Photopolymerizable composition for forming bezel pattern, method for forming bezel pattern using same, and bezel pattern manufactured thereby
JP2021051167A (en) * 2019-09-24 2021-04-01 株式会社ジャパンディスプレイ Repair method for display device

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04257240A (en) * 1991-02-12 1992-09-11 Sharp Corp Method of removing electronic part
JPH0513120A (en) * 1991-07-04 1993-01-22 Sharp Corp Electronic part mounting structure using anisotropic conductive tape connector and optical hardening resin
JPH05299402A (en) * 1992-04-20 1993-11-12 Matsushita Electric Works Ltd Method of cleaning electronic conponent
JPH0665544A (en) * 1992-08-17 1994-03-08 Hitachi Chem Co Ltd Stripping agent composition and stripping therewith
JPH0677264A (en) * 1992-08-26 1994-03-18 Hitachi Ltd Device and method for dismounting electronic component from board
JPH06190269A (en) * 1992-12-25 1994-07-12 Seiko Epson Corp Dry washing method and device therefor
JPH0729942A (en) * 1993-07-13 1995-01-31 Hitachi Ltd Repair method of electronic device
JPH07230840A (en) * 1994-02-17 1995-08-29 Hitachi Chem Co Ltd Connecting member and electrode connecting structure using the same

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04257240A (en) * 1991-02-12 1992-09-11 Sharp Corp Method of removing electronic part
JPH0513120A (en) * 1991-07-04 1993-01-22 Sharp Corp Electronic part mounting structure using anisotropic conductive tape connector and optical hardening resin
JPH05299402A (en) * 1992-04-20 1993-11-12 Matsushita Electric Works Ltd Method of cleaning electronic conponent
JPH0665544A (en) * 1992-08-17 1994-03-08 Hitachi Chem Co Ltd Stripping agent composition and stripping therewith
JPH0677264A (en) * 1992-08-26 1994-03-18 Hitachi Ltd Device and method for dismounting electronic component from board
JPH06190269A (en) * 1992-12-25 1994-07-12 Seiko Epson Corp Dry washing method and device therefor
JPH0729942A (en) * 1993-07-13 1995-01-31 Hitachi Ltd Repair method of electronic device
JPH07230840A (en) * 1994-02-17 1995-08-29 Hitachi Chem Co Ltd Connecting member and electrode connecting structure using the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019132486A1 (en) * 2017-12-27 2019-07-04 주식회사 엘지화학 Photopolymerizable composition for forming bezel pattern, method for forming bezel pattern using same, and bezel pattern manufactured thereby
US10982108B2 (en) 2017-12-27 2021-04-20 Lg Chem, Ltd. Photopolymerizable composition for forming bezel pattern, method for forming bezel pattern using same, and bezel pattern manufactured thereby
JP2021051167A (en) * 2019-09-24 2021-04-01 株式会社ジャパンディスプレイ Repair method for display device
JP7300949B2 (en) 2019-09-24 2023-06-30 株式会社ジャパンディスプレイ Display device repair method

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