JP2009004781A - 発光ダイオード及びその製造方法 - Google Patents

発光ダイオード及びその製造方法 Download PDF

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Publication number
JP2009004781A
JP2009004781A JP2008159134A JP2008159134A JP2009004781A JP 2009004781 A JP2009004781 A JP 2009004781A JP 2008159134 A JP2008159134 A JP 2008159134A JP 2008159134 A JP2008159134 A JP 2008159134A JP 2009004781 A JP2009004781 A JP 2009004781A
Authority
JP
Japan
Prior art keywords
layer
barrier layer
region
emitting diode
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008159134A
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English (en)
Japanese (ja)
Other versions
JP2009004781A5 (enExample
Inventor
Fa Moku Kim
ファ モク キム
Duck Hwan Oh
ドク ファン オ
Dae Won Kim
デ ウォン キム
Dae Sung Kal
デ ソン カル
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seoul Viosys Co Ltd
Original Assignee
Seoul Optodevice Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seoul Optodevice Co Ltd filed Critical Seoul Optodevice Co Ltd
Publication of JP2009004781A publication Critical patent/JP2009004781A/ja
Publication of JP2009004781A5 publication Critical patent/JP2009004781A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H10H20/8252—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN characterised by the dopants

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  • Led Devices (AREA)
JP2008159134A 2007-06-25 2008-06-18 発光ダイオード及びその製造方法 Pending JP2009004781A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070062196A KR100869142B1 (ko) 2007-06-25 2007-06-25 발광 다이오드 및 그 제조방법

Publications (2)

Publication Number Publication Date
JP2009004781A true JP2009004781A (ja) 2009-01-08
JP2009004781A5 JP2009004781A5 (enExample) 2011-08-04

Family

ID=39800743

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008159134A Pending JP2009004781A (ja) 2007-06-25 2008-06-18 発光ダイオード及びその製造方法

Country Status (5)

Country Link
US (1) US7868337B2 (enExample)
EP (1) EP2009707B1 (enExample)
JP (1) JP2009004781A (enExample)
KR (1) KR100869142B1 (enExample)
TW (1) TWI396300B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101064011B1 (ko) 2009-04-28 2011-09-08 엘지이노텍 주식회사 발광소자 및 그 제조방법
JPWO2011027417A1 (ja) * 2009-09-01 2013-01-31 株式会社東芝 半導体発光素子

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140019635A (ko) * 2012-08-06 2014-02-17 엘지이노텍 주식회사 발광 소자 및 발광 소자 패키지
JP6024278B2 (ja) * 2012-08-10 2016-11-16 住友電気工業株式会社 発光素子

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04355964A (ja) * 1990-12-21 1992-12-09 Mitsubishi Electric Corp 固体撮像装置及びその製造方法
US5684309A (en) * 1996-07-11 1997-11-04 North Carolina State University Stacked quantum well aluminum indium gallium nitride light emitting diodes
US5932899A (en) * 1996-08-23 1999-08-03 Trustees Of Boston University Semiconductor having enhanced acceptor activation
JP2000299492A (ja) * 1999-04-15 2000-10-24 Daido Steel Co Ltd 量子井戸型発光ダイオード
KR20000074844A (ko) * 1999-05-26 2000-12-15 김효근 질화인듐갈륨 활성 우물을 포함하는 양자우물 구조를 이용한백색 발광 다이오드 및 그의 제조방법
TWI234915B (en) * 2002-11-18 2005-06-21 Pioneer Corp Semiconductor light-emitting element and method of manufacturing the same
WO2005106982A1 (en) * 2004-04-28 2005-11-10 Showa Denko K.K. Group iii nitride semiconductor light-emitting device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101064011B1 (ko) 2009-04-28 2011-09-08 엘지이노텍 주식회사 발광소자 및 그 제조방법
JPWO2011027417A1 (ja) * 2009-09-01 2013-01-31 株式会社東芝 半導体発光素子

Also Published As

Publication number Publication date
TW200913324A (en) 2009-03-16
US7868337B2 (en) 2011-01-11
EP2009707A2 (en) 2008-12-31
TWI396300B (zh) 2013-05-11
US20080315244A1 (en) 2008-12-25
KR100869142B1 (ko) 2008-11-18
EP2009707A3 (en) 2012-07-25
EP2009707B1 (en) 2015-08-19

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