JP2008546197A - 発光ダイオードのためのシリコンサブマウント上のシリコン偏光器 - Google Patents

発光ダイオードのためのシリコンサブマウント上のシリコン偏光器 Download PDF

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Publication number
JP2008546197A
JP2008546197A JP2008514284A JP2008514284A JP2008546197A JP 2008546197 A JP2008546197 A JP 2008546197A JP 2008514284 A JP2008514284 A JP 2008514284A JP 2008514284 A JP2008514284 A JP 2008514284A JP 2008546197 A JP2008546197 A JP 2008546197A
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JP
Japan
Prior art keywords
silicon
optical barrier
etching
light emitting
reflective optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008514284A
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English (en)
Japanese (ja)
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JP2008546197A5 (enExample
Inventor
マチアス ウェンツ
ジレ フル
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips NV
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips NV, Koninklijke Philips Electronics NV filed Critical Koninklijke Philips NV
Publication of JP2008546197A publication Critical patent/JP2008546197A/ja
Publication of JP2008546197A5 publication Critical patent/JP2008546197A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/02—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of crystals, e.g. rock-salt, semi-conductors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0938—Using specific optical elements
    • G02B27/0977—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Device Packages (AREA)
  • Weting (AREA)
  • Optical Elements Other Than Lenses (AREA)
JP2008514284A 2005-06-02 2006-05-31 発光ダイオードのためのシリコンサブマウント上のシリコン偏光器 Pending JP2008546197A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP05104825 2005-06-02
PCT/IB2006/051730 WO2006129278A1 (en) 2005-06-02 2006-05-31 Silicon deflector on a silicon submount for light emitting diodes

Publications (2)

Publication Number Publication Date
JP2008546197A true JP2008546197A (ja) 2008-12-18
JP2008546197A5 JP2008546197A5 (enExample) 2009-07-16

Family

ID=37075989

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008514284A Pending JP2008546197A (ja) 2005-06-02 2006-05-31 発光ダイオードのためのシリコンサブマウント上のシリコン偏光器

Country Status (6)

Country Link
US (1) US20080179613A1 (enExample)
EP (1) EP1891684A1 (enExample)
JP (1) JP2008546197A (enExample)
CN (1) CN101189735A (enExample)
TW (1) TW200715401A (enExample)
WO (1) WO2006129278A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120088728A (ko) * 2009-09-24 2012-08-08 엠에스지 리쏘글라스 아게 캐리어 기판 상에 부품을 가진 배열체를 제조하기 위한 방법, 반제품을 제조하기 위한 방법 및 배열체, 및 반제품
JP2015185816A (ja) * 2014-03-26 2015-10-22 国立研究開発法人産業技術総合研究所 光路変換部品の製造方法及び光路変換部品

Families Citing this family (11)

* Cited by examiner, † Cited by third party
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US8999736B2 (en) * 2003-07-04 2015-04-07 Epistar Corporation Optoelectronic system
TWI320237B (en) * 2006-07-24 2010-02-01 Si-substrate and structure of opto-electronic package having the same
US20090273005A1 (en) * 2006-07-24 2009-11-05 Hung-Yi Lin Opto-electronic package structure having silicon-substrate and method of forming the same
US7732233B2 (en) * 2006-07-24 2010-06-08 Touch Micro-System Technology Corp. Method for making light emitting diode chip package
US20090273004A1 (en) * 2006-07-24 2009-11-05 Hung-Yi Lin Chip package structure and method of making the same
EP2208393B1 (en) * 2007-11-01 2019-04-24 Nxp B.V. Led package and method for manufacturing such a led package
DE102008011153B4 (de) * 2007-11-27 2023-02-02 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung einer Anordnung mit mindestens zwei lichtemittierenden Halbleiterbauelementen
WO2013095397A1 (en) * 2011-12-20 2013-06-27 Intel Corporation Hybrid integration of group iii-v semiconductor devices on silicon
KR20200109437A (ko) 2019-03-12 2020-09-23 삼성디스플레이 주식회사 전자 패널 및 이를 포함하는 전자 장치
EP4360135A1 (en) * 2021-06-25 2024-05-01 Lumileds LLC Fabrication of led arrays and led array light engines
CN117761828B (zh) * 2023-12-22 2025-02-11 广东工业大学 一种用于安装弧形光纤的硅v槽阵列的加工方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5787550U (enExample) * 1980-11-17 1982-05-29
JPH11112014A (ja) * 1997-10-01 1999-04-23 Mitsubishi Electric Corp 反射体およびこれを用いた光半導体装置並びにそれらの製造方法
JP2003142737A (ja) * 2001-08-22 2003-05-16 Nichia Chem Ind Ltd 発光装置
JP2004079750A (ja) * 2002-08-16 2004-03-11 Fuji Photo Film Co Ltd 発光装置
JP2004311701A (ja) * 2003-04-07 2004-11-04 Seiko Epson Corp 半導体装置、半導体装置の製造方法及び電子機器
JP2004356213A (ja) * 2003-05-27 2004-12-16 Matsushita Electric Works Ltd 半導体発光装置

Family Cites Families (9)

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Publication number Priority date Publication date Assignee Title
KR880014692A (ko) * 1987-05-30 1988-12-24 강진구 반사경이 부착된 반도체 발광장치
DE19720300B4 (de) * 1996-06-03 2006-05-04 CiS Institut für Mikrosensorik gGmbH Elektronisches Hybrid-Bauelement und Verfahren zu seiner Herstellung
US6137121A (en) * 1997-10-01 2000-10-24 Mitsubishi Denki Kabushiki Kaisha Integrated semiconductor light generating and detecting device
US6531328B1 (en) * 2001-10-11 2003-03-11 Solidlite Corporation Packaging of light-emitting diode
US6599768B1 (en) * 2002-08-20 2003-07-29 United Epitaxy Co., Ltd. Surface mounting method for high power light emitting diode
JP4397394B2 (ja) * 2003-01-24 2010-01-13 ディジタル・オプティクス・インターナショナル・コーポレイション 高密度照明システム
US7182480B2 (en) * 2003-03-05 2007-02-27 Tir Systems Ltd. System and method for manipulating illumination created by an array of light emitting devices
JP4182783B2 (ja) * 2003-03-14 2008-11-19 豊田合成株式会社 Ｌｅｄパッケージ
US20040184270A1 (en) * 2003-03-17 2004-09-23 Halter Michael A. LED light module with micro-reflector cavities

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5787550U (enExample) * 1980-11-17 1982-05-29
JPH11112014A (ja) * 1997-10-01 1999-04-23 Mitsubishi Electric Corp 反射体およびこれを用いた光半導体装置並びにそれらの製造方法
JP2003142737A (ja) * 2001-08-22 2003-05-16 Nichia Chem Ind Ltd 発光装置
JP2004079750A (ja) * 2002-08-16 2004-03-11 Fuji Photo Film Co Ltd 発光装置
JP2004311701A (ja) * 2003-04-07 2004-11-04 Seiko Epson Corp 半導体装置、半導体装置の製造方法及び電子機器
JP2004356213A (ja) * 2003-05-27 2004-12-16 Matsushita Electric Works Ltd 半導体発光装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120088728A (ko) * 2009-09-24 2012-08-08 엠에스지 리쏘글라스 아게 캐리어 기판 상에 부품을 가진 배열체를 제조하기 위한 방법, 반제품을 제조하기 위한 방법 및 배열체, 및 반제품
JP2013506275A (ja) * 2009-09-24 2013-02-21 エムエスゲー リトグラス アクチエンゲゼルシャフト キャリア基板上の部品を伴う配列の製造方法、配列および半製品の製造方法、並びに、半製品
US8966748B2 (en) 2009-09-24 2015-03-03 Msg Lithoglas Ag Method for manufacturing an arrangement with a component on a carrier substrate and a method for manufacturing a semi-finished product
KR101689541B1 (ko) * 2009-09-24 2016-12-26 엠에스지 리쏘글라스 아게 캐리어 기판 상에 부품을 가진 배열체를 제조하기 위한 방법, 반제품을 제조하기 위한 방법 및 배열체, 및 반제품
US10580912B2 (en) 2009-09-24 2020-03-03 Msg Lithoglas Ag Arrangement with a component on a carrier substrate, an arrangement and a semi-finished product
JP2015185816A (ja) * 2014-03-26 2015-10-22 国立研究開発法人産業技術総合研究所 光路変換部品の製造方法及び光路変換部品

Also Published As

Publication number Publication date
WO2006129278A1 (en) 2006-12-07
EP1891684A1 (en) 2008-02-27
TW200715401A (en) 2007-04-16
CN101189735A (zh) 2008-05-28
US20080179613A1 (en) 2008-07-31

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