JP2008541477A5 - - Google Patents
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- Publication number
- JP2008541477A5 JP2008541477A5 JP2008512259A JP2008512259A JP2008541477A5 JP 2008541477 A5 JP2008541477 A5 JP 2008541477A5 JP 2008512259 A JP2008512259 A JP 2008512259A JP 2008512259 A JP2008512259 A JP 2008512259A JP 2008541477 A5 JP2008541477 A5 JP 2008541477A5
- Authority
- JP
- Japan
- Prior art keywords
- diode
- header
- lamp
- phosphor
- ohmic contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 28
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 19
- 150000004767 nitrides Chemical class 0.000 claims description 19
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 15
- 239000008393 encapsulating agent Substances 0.000 claims description 14
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 9
- 239000002775 capsule Substances 0.000 claims description 7
- 238000000605 extraction Methods 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 5
- 229910002601 GaN Inorganic materials 0.000 claims description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 3
- 238000010521 absorption reaction Methods 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims 11
- 238000001228 spectrum Methods 0.000 claims 6
- 229920005989 resin Polymers 0.000 claims 5
- 239000011347 resin Substances 0.000 claims 5
- -1 cerium yttrium aluminum Chemical compound 0.000 claims 3
- 239000003822 epoxy resin Substances 0.000 claims 3
- 229920000647 polyepoxide Polymers 0.000 claims 3
- 238000001429 visible spectrum Methods 0.000 claims 3
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 claims 3
- 238000005530 etching Methods 0.000 claims 1
- 238000007373 indentation Methods 0.000 claims 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 1
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 claims 1
- 239000004593 Epoxy Substances 0.000 description 4
- 230000004907 flux Effects 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910001947 lithium oxide Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US68302705P | 2005-05-20 | 2005-05-20 | |
| PCT/US2005/032895 WO2006127030A1 (en) | 2005-05-20 | 2005-09-15 | High efficacy white led |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011101568A Division JP2011176350A (ja) | 2005-05-20 | 2011-04-28 | 高効率の白色発光ダイオード |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008541477A JP2008541477A (ja) | 2008-11-20 |
| JP2008541477A5 true JP2008541477A5 (enrdf_load_stackoverflow) | 2013-01-24 |
Family
ID=35521157
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008512259A Pending JP2008541477A (ja) | 2005-05-20 | 2005-09-15 | 高効率の白色発光ダイオード |
| JP2011101568A Pending JP2011176350A (ja) | 2005-05-20 | 2011-04-28 | 高効率の白色発光ダイオード |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011101568A Pending JP2011176350A (ja) | 2005-05-20 | 2011-04-28 | 高効率の白色発光ダイオード |
Country Status (4)
| Country | Link |
|---|---|
| JP (2) | JP2008541477A (enrdf_load_stackoverflow) |
| DE (1) | DE112005003581T5 (enrdf_load_stackoverflow) |
| TW (1) | TWI279929B (enrdf_load_stackoverflow) |
| WO (1) | WO2006127030A1 (enrdf_load_stackoverflow) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7968900B2 (en) * | 2007-01-19 | 2011-06-28 | Cree, Inc. | High performance LED package |
| US8567973B2 (en) | 2008-03-07 | 2013-10-29 | Intematix Corporation | Multiple-chip excitation systems for white light emitting diodes (LEDs) |
| EP2164302A1 (de) | 2008-09-12 | 2010-03-17 | Ilford Imaging Switzerland Gmbh | Optisches Element und Verfahren zu seiner Herstellung |
| TWI398966B (zh) * | 2009-06-08 | 2013-06-11 | Epistar Corp | 發光元件及其製造方法 |
| US20110309393A1 (en) * | 2010-06-21 | 2011-12-22 | Micron Technology, Inc. | Packaged leds with phosphor films, and associated systems and methods |
| AU2011326337B2 (en) * | 2010-11-08 | 2015-05-28 | Bae Systems Australia Limited | Antenna system |
| US8986842B2 (en) | 2011-05-24 | 2015-03-24 | Ecole Polytechnique Federale De Lausanne (Epfl) | Color conversion films comprising polymer-substituted organic fluorescent dyes |
| US20240055570A1 (en) * | 2022-08-11 | 2024-02-15 | Creeled, Inc. | Light emitting device with light-altering material layer, and fabrication method utilizing sealing template |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2001622A (en) * | 1930-10-27 | 1935-05-14 | David G Mccaa | Method of and means for reducing electrical disturbances |
| US7053419B1 (en) * | 2000-09-12 | 2006-05-30 | Lumileds Lighting U.S., Llc | Light emitting diodes with improved light extraction efficiency |
| US7064355B2 (en) * | 2000-09-12 | 2006-06-20 | Lumileds Lighting U.S., Llc | Light emitting diodes with improved light extraction efficiency |
| JP3872327B2 (ja) * | 2000-12-04 | 2007-01-24 | 日本碍子株式会社 | 半導体発光素子 |
| US6791119B2 (en) * | 2001-02-01 | 2004-09-14 | Cree, Inc. | Light emitting diodes including modifications for light extraction |
| US6924596B2 (en) * | 2001-11-01 | 2005-08-02 | Nichia Corporation | Light emitting apparatus provided with fluorescent substance and semiconductor light emitting device, and method of manufacturing the same |
| EP1512181B1 (en) * | 2002-06-13 | 2009-01-14 | Cree, Inc. | Semiconductor emitter comprising a saturated phosphor |
| JP4281044B2 (ja) * | 2002-06-18 | 2009-06-17 | 財団法人名古屋産業科学研究所 | 微小部品の配置方法 |
| JP4221649B2 (ja) * | 2002-09-02 | 2009-02-12 | スタンレー電気株式会社 | 波長変換素子並びにその製造方法 |
| US6917057B2 (en) * | 2002-12-31 | 2005-07-12 | Gelcore Llc | Layered phosphor coatings for LED devices |
| JP4366161B2 (ja) * | 2003-09-19 | 2009-11-18 | スタンレー電気株式会社 | 半導体発光装置 |
-
2005
- 2005-09-15 DE DE112005003581T patent/DE112005003581T5/de not_active Withdrawn
- 2005-09-15 WO PCT/US2005/032895 patent/WO2006127030A1/en active Application Filing
- 2005-09-15 JP JP2008512259A patent/JP2008541477A/ja active Pending
- 2005-09-15 TW TW094131904A patent/TWI279929B/zh active
-
2011
- 2011-04-28 JP JP2011101568A patent/JP2011176350A/ja active Pending
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