DE112005003581T5 - Weiße LED mit hoher Effizienz - Google Patents
Weiße LED mit hoher Effizienz Download PDFInfo
- Publication number
- DE112005003581T5 DE112005003581T5 DE112005003581T DE112005003581T DE112005003581T5 DE 112005003581 T5 DE112005003581 T5 DE 112005003581T5 DE 112005003581 T DE112005003581 T DE 112005003581T DE 112005003581 T DE112005003581 T DE 112005003581T DE 112005003581 T5 DE112005003581 T5 DE 112005003581T5
- Authority
- DE
- Germany
- Prior art keywords
- diode
- phosphor
- lamp according
- light
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 51
- 239000000758 substrate Substances 0.000 claims abstract description 36
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 25
- 150000004767 nitrides Chemical class 0.000 claims abstract description 23
- 238000006243 chemical reaction Methods 0.000 claims abstract description 9
- 239000008393 encapsulating agent Substances 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 38
- 238000005538 encapsulation Methods 0.000 claims description 26
- 238000001228 spectrum Methods 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 13
- 239000000203 mixture Substances 0.000 claims description 11
- 229920005989 resin Polymers 0.000 claims description 11
- 239000011347 resin Substances 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 11
- 238000000605 extraction Methods 0.000 claims description 9
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 9
- 238000001429 visible spectrum Methods 0.000 claims description 7
- 239000007787 solid Substances 0.000 claims description 6
- 239000003822 epoxy resin Substances 0.000 claims description 5
- 229920000647 polyepoxide Polymers 0.000 claims description 5
- 230000004044 response Effects 0.000 claims description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 4
- 238000010521 absorption reaction Methods 0.000 claims description 4
- 239000002223 garnet Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 229910002601 GaN Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- -1 cesium lithium aluminum Chemical compound 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 238000001039 wet etching Methods 0.000 claims description 2
- 229910052792 caesium Inorganic materials 0.000 claims 2
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical group [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 230000004907 flux Effects 0.000 description 9
- 239000004593 Epoxy Substances 0.000 description 7
- 239000002800 charge carrier Substances 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 239000003086 colorant Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000002775 capsule Substances 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 230000005457 Black-body radiation Effects 0.000 description 1
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 235000010678 Paulownia tomentosa Nutrition 0.000 description 1
- 240000002834 Paulownia tomentosa Species 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- KGWWEXORQXHJJQ-UHFFFAOYSA-N [Fe].[Co].[Ni] Chemical compound [Fe].[Co].[Ni] KGWWEXORQXHJJQ-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- OTNGJPUGTXULBS-UHFFFAOYSA-N cesium titanium Chemical group [Ti][Cs] OTNGJPUGTXULBS-UHFFFAOYSA-N 0.000 description 1
- 230000004456 color vision Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 235000021384 green leafy vegetables Nutrition 0.000 description 1
- 125000001475 halogen functional group Chemical group 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 229910001947 lithium oxide Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000005375 photometry Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8515—Wavelength conversion means not being in contact with the bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
- H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
- H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/882—Scattering means
Landscapes
- Led Device Packages (AREA)
- Luminescent Compositions (AREA)
- Led Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US68302705P | 2005-05-20 | 2005-05-20 | |
| US60/683,027 | 2005-05-20 | ||
| PCT/US2005/032895 WO2006127030A1 (en) | 2005-05-20 | 2005-09-15 | High efficacy white led |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE112005003581T5 true DE112005003581T5 (de) | 2008-04-03 |
Family
ID=35521157
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE112005003581T Withdrawn DE112005003581T5 (de) | 2005-05-20 | 2005-09-15 | Weiße LED mit hoher Effizienz |
Country Status (4)
| Country | Link |
|---|---|
| JP (2) | JP2008541477A (enrdf_load_stackoverflow) |
| DE (1) | DE112005003581T5 (enrdf_load_stackoverflow) |
| TW (1) | TWI279929B (enrdf_load_stackoverflow) |
| WO (1) | WO2006127030A1 (enrdf_load_stackoverflow) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7968900B2 (en) * | 2007-01-19 | 2011-06-28 | Cree, Inc. | High performance LED package |
| US8567973B2 (en) | 2008-03-07 | 2013-10-29 | Intematix Corporation | Multiple-chip excitation systems for white light emitting diodes (LEDs) |
| EP2164302A1 (de) | 2008-09-12 | 2010-03-17 | Ilford Imaging Switzerland Gmbh | Optisches Element und Verfahren zu seiner Herstellung |
| TWI398966B (zh) * | 2009-06-08 | 2013-06-11 | Epistar Corp | 發光元件及其製造方法 |
| US20110309393A1 (en) | 2010-06-21 | 2011-12-22 | Micron Technology, Inc. | Packaged leds with phosphor films, and associated systems and methods |
| AU2011326337B2 (en) * | 2010-11-08 | 2015-05-28 | Bae Systems Australia Limited | Antenna system |
| US8986842B2 (en) | 2011-05-24 | 2015-03-24 | Ecole Polytechnique Federale De Lausanne (Epfl) | Color conversion films comprising polymer-substituted organic fluorescent dyes |
| US20240055570A1 (en) * | 2022-08-11 | 2024-02-15 | Creeled, Inc. | Light emitting device with light-altering material layer, and fabrication method utilizing sealing template |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2001622A (en) * | 1930-10-27 | 1935-05-14 | David G Mccaa | Method of and means for reducing electrical disturbances |
| US7064355B2 (en) * | 2000-09-12 | 2006-06-20 | Lumileds Lighting U.S., Llc | Light emitting diodes with improved light extraction efficiency |
| US7053419B1 (en) * | 2000-09-12 | 2006-05-30 | Lumileds Lighting U.S., Llc | Light emitting diodes with improved light extraction efficiency |
| JP3872327B2 (ja) * | 2000-12-04 | 2007-01-24 | 日本碍子株式会社 | 半導体発光素子 |
| US6791119B2 (en) * | 2001-02-01 | 2004-09-14 | Cree, Inc. | Light emitting diodes including modifications for light extraction |
| US6924596B2 (en) * | 2001-11-01 | 2005-08-02 | Nichia Corporation | Light emitting apparatus provided with fluorescent substance and semiconductor light emitting device, and method of manufacturing the same |
| AU2003238234A1 (en) * | 2002-06-13 | 2003-12-31 | Cree, Inc. | Semiconductor emitter comprising a saturated phosphor |
| JP4281044B2 (ja) * | 2002-06-18 | 2009-06-17 | 財団法人名古屋産業科学研究所 | 微小部品の配置方法 |
| JP4221649B2 (ja) * | 2002-09-02 | 2009-02-12 | スタンレー電気株式会社 | 波長変換素子並びにその製造方法 |
| US6917057B2 (en) * | 2002-12-31 | 2005-07-12 | Gelcore Llc | Layered phosphor coatings for LED devices |
| JP4366161B2 (ja) * | 2003-09-19 | 2009-11-18 | スタンレー電気株式会社 | 半導体発光装置 |
-
2005
- 2005-09-15 WO PCT/US2005/032895 patent/WO2006127030A1/en active Application Filing
- 2005-09-15 TW TW094131904A patent/TWI279929B/zh active
- 2005-09-15 JP JP2008512259A patent/JP2008541477A/ja active Pending
- 2005-09-15 DE DE112005003581T patent/DE112005003581T5/de not_active Withdrawn
-
2011
- 2011-04-28 JP JP2011101568A patent/JP2011176350A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JP2008541477A (ja) | 2008-11-20 |
| WO2006127030A1 (en) | 2006-11-30 |
| TW200642117A (en) | 2006-12-01 |
| JP2011176350A (ja) | 2011-09-08 |
| TWI279929B (en) | 2007-04-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| 8128 | New person/name/address of the agent |
Representative=s name: DR. WEITZEL & PARTNER, 89522 HEIDENHEIM |
|
| 8128 | New person/name/address of the agent |
Representative=s name: PAE REINHARD, SKUHRA, WEISE & PARTNER GBR, 80801 M |
|
| R119 | Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee |