JP2008537781A5 - - Google Patents
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- JP2008537781A5 JP2008537781A5 JP2008505351A JP2008505351A JP2008537781A5 JP 2008537781 A5 JP2008537781 A5 JP 2008537781A5 JP 2008505351 A JP2008505351 A JP 2008505351A JP 2008505351 A JP2008505351 A JP 2008505351A JP 2008537781 A5 JP2008537781 A5 JP 2008537781A5
- Authority
- JP
- Japan
- Prior art keywords
- measurement
- probe
- wafer
- photoacoustic
- sample
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 238000005259 measurement Methods 0.000 description 160
- 239000000523 sample Substances 0.000 description 150
- 235000012431 wafers Nutrition 0.000 description 58
- 238000000034 method Methods 0.000 description 35
- 239000010408 film Substances 0.000 description 26
- 230000003287 optical effect Effects 0.000 description 24
- 230000009977 dual effect Effects 0.000 description 20
- 239000004065 semiconductor Substances 0.000 description 17
- 239000000463 material Substances 0.000 description 16
- 239000010409 thin film Substances 0.000 description 11
- 230000005284 excitation Effects 0.000 description 10
- 230000008859 change Effects 0.000 description 9
- 238000012360 testing method Methods 0.000 description 8
- 230000008901 benefit Effects 0.000 description 7
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- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 238000000528 statistical test Methods 0.000 description 3
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- 239000013307 optical fiber Substances 0.000 description 2
- 238000004886 process control Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000002604 ultrasonography Methods 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000004887 air purification Methods 0.000 description 1
- 238000004422 calculation algorithm Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
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- 239000006185 dispersion Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
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- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
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- 238000000926 separation method Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 210000002784 stomach Anatomy 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000003949 trap density measurement Methods 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/104,093 US7372584B2 (en) | 2005-04-11 | 2005-04-11 | Dual photo-acoustic and resistivity measurement system |
| PCT/US2006/010616 WO2006110282A2 (en) | 2005-04-11 | 2006-03-22 | Dual photo-acoustic and resistivity measurement system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008537781A JP2008537781A (ja) | 2008-09-25 |
| JP2008537781A5 true JP2008537781A5 (enExample) | 2011-12-08 |
Family
ID=37082851
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008505351A Pending JP2008537781A (ja) | 2005-04-11 | 2006-03-22 | デュアル光音響および抵抗測定システム |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7372584B2 (enExample) |
| EP (1) | EP1869430A2 (enExample) |
| JP (1) | JP2008537781A (enExample) |
| WO (1) | WO2006110282A2 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2887334B1 (fr) * | 2005-06-20 | 2007-08-24 | Centre Nat Rech Scient | Dispositif et procede de caracterisation de structure par effet de longueur d'onde dans un systeme photo-acoustique |
| US20070024870A1 (en) * | 2005-08-01 | 2007-02-01 | Girard Mark T | Apparatuses and methods for measuring head suspensions and head suspension assemblies |
| DE202010006062U1 (de) * | 2010-04-23 | 2010-07-22 | Helmut Fischer GmbH Institut für Elektronik und Messtechnik | Messsonde zur zerstörungsfreien Messung der Dicke dünner Schichten |
| CN102288825A (zh) * | 2011-06-08 | 2011-12-21 | 沈阳飞机工业（集团）有限公司 | 碳纤维复合材料制件表面铝层电阻值测量方法 |
| GB2503722A (en) * | 2012-07-06 | 2014-01-08 | Sonex Metrology Ltd | A photoacoustic inspection device |
| JP5665098B2 (ja) * | 2012-09-20 | 2015-02-04 | 独立行政法人産業技術総合研究所 | 焼き入れ深さ測定装置、焼き入れ深さ測定方法、表層深さ測定装置、表層深さ測定方法 |
| US9093335B2 (en) * | 2012-11-29 | 2015-07-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Calculating carrier concentrations in semiconductor Fins using probed resistance |
| US11668644B2 (en) | 2021-03-30 | 2023-06-06 | Onto Innovation Inc. | Opto-acoustic measurement of a transparent film stack |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3416078A (en) * | 1965-07-08 | 1968-12-10 | Motorola Inc | Method of determining resistivity of a thin layer |
| US3609537A (en) * | 1969-04-01 | 1971-09-28 | Ibm | Resistance standard |
| NL7008274A (enExample) * | 1970-06-06 | 1971-12-08 | ||
| US3676775A (en) * | 1971-05-07 | 1972-07-11 | Ibm | Method for measuring resistivity |
| US3783375A (en) * | 1973-02-21 | 1974-01-01 | Westinghouse Electric Corp | Means for calibrating a four-probe resistivity measuring device |
| US4710030A (en) * | 1985-05-17 | 1987-12-01 | Bw Brown University Research Foundation | Optical generator and detector of stress pulses |
| JPS6370102A (ja) * | 1986-09-10 | 1988-03-30 | Mitsubishi Petrochem Co Ltd | 導電体肉厚非破壊測定法 |
| JPS6375808U (enExample) * | 1986-11-06 | 1988-05-20 | ||
| US5379109A (en) * | 1992-06-17 | 1995-01-03 | The United States Of America As Represented By The Secretary Of The Navy | Method and apparatus for non-destructively measuring local resistivity of semiconductors |
| TW280928B (enExample) * | 1994-10-24 | 1996-07-11 | At & T Corp | |
| US5546811A (en) * | 1995-01-24 | 1996-08-20 | Massachusetts Instittue Of Technology | Optical measurements of stress in thin film materials |
| US6008906A (en) * | 1995-08-25 | 1999-12-28 | Brown University Research Foundation | Optical method for the characterization of the electrical properties of semiconductors and insulating films |
| US5748318A (en) * | 1996-01-23 | 1998-05-05 | Brown University Research Foundation | Optical stress generator and detector |
| JPH09263934A (ja) * | 1996-03-29 | 1997-10-07 | Toppan Printing Co Ltd | 膜形成方法及びその装置 |
| US5844684A (en) * | 1997-02-28 | 1998-12-01 | Brown University Research Foundation | Optical method for determining the mechanical properties of a material |
| US6069703A (en) * | 1998-05-28 | 2000-05-30 | Active Impulse Systems, Inc. | Method and device for simultaneously measuring the thickness of multiple thin metal films in a multilayer structure |
| US6038026A (en) * | 1998-07-07 | 2000-03-14 | Brown University Research Foundation | Apparatus and method for the determination of grain size in thin films |
| US6393915B1 (en) * | 1999-07-29 | 2002-05-28 | Koninklijke Philips Electronics N.V. | Method and device for simultaneously measuring multiple properties of multilayer films |
| US7050160B1 (en) * | 2002-10-11 | 2006-05-23 | Kla-Tencor Technologies Corporation | Process and apparatus for integrating sheet resistance measurements and reflectance measurements of a thin film in a common apparatus |
| JP2004325217A (ja) * | 2003-04-24 | 2004-11-18 | Nikon Corp | 搬送装置 |
-
2005
- 2005-04-11 US US11/104,093 patent/US7372584B2/en not_active Expired - Lifetime
-
2006
- 2006-03-22 JP JP2008505351A patent/JP2008537781A/ja active Pending
- 2006-03-22 WO PCT/US2006/010616 patent/WO2006110282A2/en not_active Ceased
- 2006-03-22 EP EP06739420A patent/EP1869430A2/en not_active Withdrawn
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