JP2008537781A - デュアル光音響および抵抗測定システム - Google Patents

デュアル光音響および抵抗測定システム Download PDF

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Publication number
JP2008537781A
JP2008537781A JP2008505351A JP2008505351A JP2008537781A JP 2008537781 A JP2008537781 A JP 2008537781A JP 2008505351 A JP2008505351 A JP 2008505351A JP 2008505351 A JP2008505351 A JP 2008505351A JP 2008537781 A JP2008537781 A JP 2008537781A
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JP
Japan
Prior art keywords
measurement
subsystem
photoacoustic
wafer
probe
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Pending
Application number
JP2008505351A
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English (en)
Japanese (ja)
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JP2008537781A5 (enExample
Inventor
アール グレゴリイ ウォルフ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rudolph Technologies Inc
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Rudolph Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rudolph Technologies Inc filed Critical Rudolph Technologies Inc
Publication of JP2008537781A publication Critical patent/JP2008537781A/ja
Publication of JP2008537781A5 publication Critical patent/JP2008537781A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2855—Environmental, reliability or burn-in testing
    • G01R31/2856—Internal circuit aspects, e.g. built-in test features; Test chips; Measuring material aspects, e.g. electro migration [EM]
    • G01R31/2858—Measuring of material aspects, e.g. electro-migration [EM], hot carrier injection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/1702—Systems in which incident light is modified in accordance with the properties of the material investigated with opto-acoustic detection, e.g. for gases or analysing solids
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/282—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
    • G01R31/2831—Testing of materials or semi-finished products, e.g. semiconductor wafers or substrates
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/1702—Systems in which incident light is modified in accordance with the properties of the material investigated with opto-acoustic detection, e.g. for gases or analysing solids
    • G01N2021/1706—Systems in which incident light is modified in accordance with the properties of the material investigated with opto-acoustic detection, e.g. for gases or analysing solids in solids
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G01R31/311—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation of integrated circuits

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Biochemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Health & Medical Sciences (AREA)
  • General Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Environmental & Geological Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
  • Measurement Of Resistance Or Impedance (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
  • Length Measuring Devices Characterised By Use Of Acoustic Means (AREA)
  • Length Measuring Devices With Unspecified Measuring Means (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
JP2008505351A 2005-04-11 2006-03-22 デュアル光音響および抵抗測定システム Pending JP2008537781A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/104,093 US7372584B2 (en) 2005-04-11 2005-04-11 Dual photo-acoustic and resistivity measurement system
PCT/US2006/010616 WO2006110282A2 (en) 2005-04-11 2006-03-22 Dual photo-acoustic and resistivity measurement system

Publications (2)

Publication Number Publication Date
JP2008537781A true JP2008537781A (ja) 2008-09-25
JP2008537781A5 JP2008537781A5 (enExample) 2011-12-08

Family

ID=37082851

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008505351A Pending JP2008537781A (ja) 2005-04-11 2006-03-22 デュアル光音響および抵抗測定システム

Country Status (4)

Country Link
US (1) US7372584B2 (enExample)
EP (1) EP1869430A2 (enExample)
JP (1) JP2008537781A (enExample)
WO (1) WO2006110282A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014077782A (ja) * 2012-09-20 2014-05-01 National Institute Of Advanced Industrial & Technology 焼き入れ深さ測定装置、焼き入れ深さ測定方法、表層深さ測定装置、表層深さ測定方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2887334B1 (fr) * 2005-06-20 2007-08-24 Centre Nat Rech Scient Dispositif et procede de caracterisation de structure par effet de longueur d'onde dans un systeme photo-acoustique
US20070024870A1 (en) * 2005-08-01 2007-02-01 Girard Mark T Apparatuses and methods for measuring head suspensions and head suspension assemblies
DE202010006062U1 (de) * 2010-04-23 2010-07-22 Helmut Fischer GmbH Institut für Elektronik und Messtechnik Messsonde zur zerstörungsfreien Messung der Dicke dünner Schichten
CN102288825A (zh) * 2011-06-08 2011-12-21 沈阳飞机工业（集团）有限公司 碳纤维复合材料制件表面铝层电阻值测量方法
GB2503722A (en) * 2012-07-06 2014-01-08 Sonex Metrology Ltd A photoacoustic inspection device
US9093335B2 (en) * 2012-11-29 2015-07-28 Taiwan Semiconductor Manufacturing Company, Ltd. Calculating carrier concentrations in semiconductor Fins using probed resistance
US11668644B2 (en) 2021-03-30 2023-06-06 Onto Innovation Inc. Opto-acoustic measurement of a transparent film stack

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6370102A (ja) * 1986-09-10 1988-03-30 Mitsubishi Petrochem Co Ltd 導電体肉厚非破壊測定法
JPS6375808U (enExample) * 1986-11-06 1988-05-20
JPH09263934A (ja) * 1996-03-29 1997-10-07 Toppan Printing Co Ltd 膜形成方法及びその装置
JP2002516985A (ja) * 1998-05-28 2002-06-11 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 少なくとも一つの層を含む構造の特徴を測定する方法及び装置
JP2004325217A (ja) * 2003-04-24 2004-11-18 Nikon Corp 搬送装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3416078A (en) * 1965-07-08 1968-12-10 Motorola Inc Method of determining resistivity of a thin layer
US3609537A (en) * 1969-04-01 1971-09-28 Ibm Resistance standard
NL7008274A (enExample) * 1970-06-06 1971-12-08
US3676775A (en) * 1971-05-07 1972-07-11 Ibm Method for measuring resistivity
US3783375A (en) * 1973-02-21 1974-01-01 Westinghouse Electric Corp Means for calibrating a four-probe resistivity measuring device
US4710030A (en) * 1985-05-17 1987-12-01 Bw Brown University Research Foundation Optical generator and detector of stress pulses
US5379109A (en) * 1992-06-17 1995-01-03 The United States Of America As Represented By The Secretary Of The Navy Method and apparatus for non-destructively measuring local resistivity of semiconductors
TW280928B (enExample) * 1994-10-24 1996-07-11 At & T Corp
US5546811A (en) * 1995-01-24 1996-08-20 Massachusetts Instittue Of Technology Optical measurements of stress in thin film materials
US6008906A (en) * 1995-08-25 1999-12-28 Brown University Research Foundation Optical method for the characterization of the electrical properties of semiconductors and insulating films
US5748318A (en) * 1996-01-23 1998-05-05 Brown University Research Foundation Optical stress generator and detector
US5844684A (en) * 1997-02-28 1998-12-01 Brown University Research Foundation Optical method for determining the mechanical properties of a material
US6038026A (en) * 1998-07-07 2000-03-14 Brown University Research Foundation Apparatus and method for the determination of grain size in thin films
US6393915B1 (en) * 1999-07-29 2002-05-28 Koninklijke Philips Electronics N.V. Method and device for simultaneously measuring multiple properties of multilayer films
US7050160B1 (en) * 2002-10-11 2006-05-23 Kla-Tencor Technologies Corporation Process and apparatus for integrating sheet resistance measurements and reflectance measurements of a thin film in a common apparatus

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6370102A (ja) * 1986-09-10 1988-03-30 Mitsubishi Petrochem Co Ltd 導電体肉厚非破壊測定法
JPS6375808U (enExample) * 1986-11-06 1988-05-20
JPH09263934A (ja) * 1996-03-29 1997-10-07 Toppan Printing Co Ltd 膜形成方法及びその装置
JP2002516985A (ja) * 1998-05-28 2002-06-11 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 少なくとも一つの層を含む構造の特徴を測定する方法及び装置
JP2004325217A (ja) * 2003-04-24 2004-11-18 Nikon Corp 搬送装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014077782A (ja) * 2012-09-20 2014-05-01 National Institute Of Advanced Industrial & Technology 焼き入れ深さ測定装置、焼き入れ深さ測定方法、表層深さ測定装置、表層深さ測定方法

Also Published As

Publication number Publication date
WO2006110282A3 (en) 2007-03-15
WO2006110282A2 (en) 2006-10-19
US7372584B2 (en) 2008-05-13
EP1869430A2 (en) 2007-12-26
US20060227342A1 (en) 2006-10-12

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