JP2008508702A5 - - Google Patents

Download PDF

Info

Publication number
JP2008508702A5
JP2008508702A5 JP2007523020A JP2007523020A JP2008508702A5 JP 2008508702 A5 JP2008508702 A5 JP 2008508702A5 JP 2007523020 A JP2007523020 A JP 2007523020A JP 2007523020 A JP2007523020 A JP 2007523020A JP 2008508702 A5 JP2008508702 A5 JP 2008508702A5
Authority
JP
Japan
Prior art keywords
light
region
film
light emitting
avalanche
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007523020A
Other languages
English (en)
Japanese (ja)
Other versions
JP5069559B2 (ja
JP2008508702A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/EP2005/008213 external-priority patent/WO2006010618A1/en
Publication of JP2008508702A publication Critical patent/JP2008508702A/ja
Publication of JP2008508702A5 publication Critical patent/JP2008508702A5/ja
Application granted granted Critical
Publication of JP5069559B2 publication Critical patent/JP5069559B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2007523020A 2004-07-28 2005-07-28 Ｃｍｏｓをモノリシックに集積した光素子 Expired - Fee Related JP5069559B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US59165804P 2004-07-28 2004-07-28
US60/591,658 2004-07-28
PCT/EP2005/008213 WO2006010618A1 (en) 2004-07-28 2005-07-28 Photonic devices monolithically integrated with cmos

Publications (3)

Publication Number Publication Date
JP2008508702A JP2008508702A (ja) 2008-03-21
JP2008508702A5 true JP2008508702A5 (OSRAM) 2012-05-17
JP5069559B2 JP5069559B2 (ja) 2012-11-07

Family

ID=35240919

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007523020A Expired - Fee Related JP5069559B2 (ja) 2004-07-28 2005-07-28 Ｃｍｏｓをモノリシックに集積した光素子

Country Status (5)

Country Link
US (2) US8963169B2 (OSRAM)
EP (1) EP1782481A1 (OSRAM)
JP (1) JP5069559B2 (OSRAM)
CN (1) CN101002326B (OSRAM)
WO (1) WO2006010618A1 (OSRAM)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4920342B2 (ja) * 2006-08-24 2012-04-18 浜松ホトニクス株式会社 シリコン素子の製造方法
FR2906403B1 (fr) * 2006-09-21 2008-12-19 Commissariat Energie Atomique Procede de recuit de cellules photovoltaiques
WO2009152365A1 (en) * 2008-06-11 2009-12-17 Solar Implant Technologies Inc. Solar cell fabrication with faceting and ion implantation
JP5003699B2 (ja) * 2009-03-10 2012-08-15 株式会社日立製作所 シリコン発光ダイオード、シリコン光トランジスタ、シリコンレーザー及びそれらの製造方法。
EP2409331A4 (en) * 2009-03-20 2017-06-28 Intevac, Inc. Advanced high efficiency crystalline solar cell fabrication method
WO2010110781A1 (en) 2009-03-23 2010-09-30 Hewlett-Packard Development Company, L.P. Indirect-bandgap-semiconductor, light-emitting diode
KR20120022872A (ko) * 2009-05-22 2012-03-12 스미또모 가가꾸 가부시키가이샤 반도체 기판, 전자 디바이스, 반도체 기판의 제조 방법 및 전자 디바이스의 제조 방법
EP2256812A1 (en) * 2009-05-25 2010-12-01 Nxp B.V. Semiconductor device for increasing output power of a light emitting unit
WO2010137260A1 (ja) * 2009-05-26 2010-12-02 住友化学株式会社 半導体基板、半導体基板の製造方法、および電子デバイス
US8749053B2 (en) 2009-06-23 2014-06-10 Intevac, Inc. Plasma grid implant system for use in solar cell fabrications
TWI389329B (zh) * 2009-06-29 2013-03-11 Au Optronics Corp 平面顯示面板、紫外光感測器及其製造方法
EP2270840B1 (en) * 2009-06-29 2020-06-03 IMEC vzw Method for manufacturing an III-V material substrate and the substrate thereof
KR20120137361A (ko) * 2010-02-09 2012-12-20 인테벡, 인코포레이티드 태양 전지 제조용의 조정가능한 섀도우 마스크 어셈블리
US8237177B2 (en) * 2010-07-12 2012-08-07 National Semiconductor Corporation Fully silicon ALED-photodiode optical data link module
JP2012156310A (ja) * 2011-01-26 2012-08-16 Sony Corp 固体撮像素子、固体撮像素子の製造方法、および電子機器
SG10201508582WA (en) 2011-11-08 2015-11-27 Intevac Inc Substrate processing system and method
WO2013118248A1 (ja) 2012-02-06 2013-08-15 株式会社日立製作所 発光素子
EP2626917B1 (en) * 2012-02-10 2017-09-27 IHP GmbH-Innovations for High Performance Microelectronics / Leibniz-Institut für innovative Mikroelektronik A CMOS-compatible germanium tunable Laser
US9425341B2 (en) 2012-10-08 2016-08-23 Agency For Science, Technology And Research P-I-N photodiode with dopant diffusion barrier layer
WO2014100506A1 (en) 2012-12-19 2014-06-26 Intevac, Inc. Grid for plasma ion implant
CN112420816A (zh) 2013-09-23 2021-02-26 量子半导体有限公司 超晶格材料和应用
CN103787264B (zh) * 2014-01-21 2016-06-15 华进半导体封装先导技术研发中心有限公司 一种应用于高速宽带光互连的硅通孔器件的制造方法及其器件
WO2015148527A1 (en) * 2014-03-26 2015-10-01 University Of Houston System Radiation and temperature hard multi-pixel avalanche photodiodes
US9874693B2 (en) 2015-06-10 2018-01-23 The Research Foundation For The State University Of New York Method and structure for integrating photonics with CMOs
US10503851B2 (en) * 2016-01-22 2019-12-10 Hewlett Packard Enterprise Development Lp CMOS-photonics co-design
CN105842782B (zh) * 2016-05-05 2019-04-16 湖南大学 一种采用石墨烯光电器件的单片光电集成电路
US10403484B2 (en) * 2017-04-18 2019-09-03 University Of Southern California Optical modulation of on-chip thermionic emission using resonant cavity coupled electron emitters
CN109904181B (zh) * 2019-02-22 2022-09-02 上海集成电路研发中心有限公司 一种高填充因子的cmos成像传感器及其制作方法
CN111048606B (zh) * 2019-12-25 2021-06-29 武汉邮电科学研究院有限公司 一种高带宽高响应度的锗硅光电探测器
JP2021150365A (ja) * 2020-03-17 2021-09-27 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子機器
EP3933926B1 (en) 2020-07-03 2026-03-18 IMEC vzw Pixelated optoelectronic device
CN111682078B (zh) * 2020-07-24 2022-09-30 中国科学技术大学 一种单行载流子光电探测器及其制作方法
WO2025076496A1 (en) * 2023-10-06 2025-04-10 Quantum Semiconductor Llc Optoelectronic, thermoelectric, photonic, materials and devices, fabricated on the back side surface of cmos wafers

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2396419A1 (fr) * 1977-06-27 1979-01-26 Thomson Csf Diode capable de fonctionner en emetteur et detecteur de lumiere de la meme longueur d'onde alternativement
JPH02275670A (ja) * 1989-01-18 1990-11-09 Canon Inc 光電変換装置および画像読取装置
US5631664A (en) * 1992-09-18 1997-05-20 Olympus Optical Co., Ltd. Display system utilizing electron emission by polarization reversal of ferroelectric material
US5686734A (en) 1993-01-22 1997-11-11 Canon Kabushiki Kaisha Thin film semiconductor device and photoelectric conversion device using the thin film semiconductor device
US5937274A (en) * 1995-01-31 1999-08-10 Hitachi, Ltd. Fabrication method for AlGaIn NPAsSb based devices
US5621227A (en) 1995-07-18 1997-04-15 Discovery Semiconductors, Inc. Method and apparatus for monolithic optoelectronic integrated circuit using selective epitaxy
CA2319536A1 (en) * 1998-02-02 1999-08-05 Uniax Corporation Organic diodes with switchable photosensitivity
WO2000021280A1 (en) * 1998-10-07 2000-04-13 California Institute Of Technology Silicon-on-insulator (soi) active pixel sensors with the photosites implemented in the substrate
WO2000077861A1 (en) * 1999-06-14 2000-12-21 Augusto Carlos J R P Stacked wavelength-selective opto-electronic device
JP2001135851A (ja) * 1999-11-05 2001-05-18 Minolta Co Ltd 光電変換素子および固体撮像装置
JP4376516B2 (ja) * 2000-10-19 2009-12-02 クォンタム セミコンダクター リミテッド ライアビリティ カンパニー Ｃｍｏｓと一体化されたヘテロ接合ホトダイオードの製造方法
US6525347B2 (en) * 2001-03-12 2003-02-25 Matsushita Electric Industrial Co., Ltd. Photodetector and unit mounted with photodetector
US6847045B2 (en) * 2001-10-12 2005-01-25 Hewlett-Packard Development Company, L.P. High-current avalanche-tunneling and injection-tunneling semiconductor-dielectric-metal stable cold emitter, which emulates the negative electron affinity mechanism of emission
US6720588B2 (en) * 2001-11-28 2004-04-13 Optonics, Inc. Avalanche photodiode for photon counting applications and method thereof
KR100462164B1 (ko) 2002-01-11 2004-12-17 매그나칩 반도체 유한회사 필팩터를 향상시킨 씨모스 이미지센서
EP1472739A1 (en) * 2002-02-08 2004-11-03 Qinetiq Limited Photodetector circuit
ATE401666T1 (de) 2002-09-19 2008-08-15 Quantum Semiconductor Llc Licht-detektierende vorrichtung
US6642076B1 (en) * 2002-10-22 2003-11-04 Taiwan Semiconductor Manufacturing Company Asymmetrical reset transistor with double-diffused source for CMOS image sensor
US7019383B2 (en) * 2003-02-26 2006-03-28 Skyworks Solutions, Inc. Gallium arsenide HBT having increased performance and method for its fabrication
US8039882B2 (en) * 2003-08-22 2011-10-18 Micron Technology, Inc. High gain, low noise photodiode for image sensors and method of formation
US7160753B2 (en) * 2004-03-16 2007-01-09 Voxtel, Inc. Silicon-on-insulator active pixel sensors

Similar Documents

Publication Publication Date Title
JP5069559B2 (ja) Ｃｍｏｓをモノリシックに集積した光素子
US20250248092A1 (en) Superlattice materials and applications
US6943051B2 (en) Method of fabricating heterojunction photodiodes integrated with CMOS
EP1540733B1 (en) Light-sensing device
US8816443B2 (en) Method of fabricating heterojunction photodiodes with CMOS
US9543356B2 (en) Pixel sensor cell including light shield
US20080070340A1 (en) Image sensor using thin-film SOI
US20110210382A1 (en) Digital radiographic flat-panel imaging array with dual height semiconductor and method of making same
US7265006B2 (en) Method of fabricating heterojunction devices integrated with CMOS
US20150115321A1 (en) Substrate structure, complementary metal oxide semiconductor device, and method of manufacturing complementary metal oxide semiconductor device
TW201103132A (en) Solid-state image device, method for producing the same, and image pickup apparatus
US20060014334A1 (en) Method of fabricating heterojunction devices integrated with CMOS
Augusto et al. A new CMOS SiGeC avalanche photo-diode pixel for IR sensing