JP2008504707A - 分子結合を用いた2つの基板の組立方法 - Google Patents
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Abstract
Description
本明細書の目的において、“基板または構造物の表面トポグラフィー”とは、その基板または構造物の表面上の起伏を意味する。
図1Aから1Cは、本発明による方法の実施形態の手順を示す。図2Aから2Cは、本発明による方法の他の実施形態の手順を示す。図3Aから3Dは、本発明による方法の他の実施形態の手順を示す。
2 第1基板(読み取り回路)
3 第2基板
4 第2材料層
11 絶縁領域
12 隔離領域
13 キャビティ
30 キャビティ
33 電気伝導層
34 伝導化合物
Claims (30)
- 第1基板の面上に位置する領域と第2基板の面上に位置してそれに対応する領域との間に局所的な電気結合を可能にし、前記面は互いに向かい合うように位置され、前記基板の少なくとも一方は表面トポグラフィーを有する組立方法であって、
トポグラフィックな点から前記基板を互いに前記基板の面の分子結合に適合するように、表面トポグラフィーを有する前記1つの基板または2つの基板の前記面に少なくとも1つの埋込層を含む中間層を形成する段階であって、前記局所的な電気結合を可能にするように前記中間層の抵抗率及び/又は厚さが選択される段階と、
前記第1基板上に位置する領域と前記第2基板上に位置する前記対応する領域との間に電気結合を形成するように前記基板を位置させ、前記2つの表面を接触させる段階と、
前記第1及び第2基板の表面を分子結合によって結合する段階と、を含むことを特徴とする組立方法。 - 前記中間層は、前記埋込層上に形成された結合層をさらに含み、
前記結合層は、前記第1及び第2基板の前記面の間の分子結合を改善することを特徴とする請求項1に記載の組立方法。 - 一方の基板のみが表面トポグラフィーを有する場合、表面トポグラフィーを有しない他の基板は、前記第1及び第2基板の前記面の間の分子結合を改善する結合層を含み、前記結合層は、前記中間層によって可能になる前記局所的な電気結合を阻害しないことを特徴とする請求項1または2に記載の組立方法。
- 中間層が形成される段階の前に、前記第1基板の前記面上に位置する前記領域の少なくとも1つの上に、及び/又は、前記第2基板の面上に位置する前記対応する領域の少なくとも1つの上に、電気伝導層を形成する段階を含み、前記電気伝導層は、前記界面に近接する伝導合金領域を形成する前記埋込層の全部又は一部と反応することができることを特徴とする請求項1から3の何れか一項に記載の組立方法。
- 前記電気伝導層は、前記中間層の前記結合層とも反応し、前記合金領域に関与する伝導合金を形成することを特徴とする請求項2及び4に記載の組立方法。
- 前記電気伝導層は、前記合金領域に関与する伝導合金を形成するために形成される前記基板に面する前記基板の前記表面領域の少なくとも全部または一部と反応する請求項4または5に記載の組立方法。
- 前記合金は、前記組立体の熱処理によって形成されることを特徴とする請求項4から6の何れか一項に記載の組立方法。
- 前記組立体の熱処理は、前記分子結合段階の後に行われることを特徴とする請求項7に記載の組立方法。
- 前記電気伝導層は、金属及び/又は伝導合金からなることを特徴とする請求項1から8の何れか一項に記載の組立方法。
- 前記埋込層は、形成後に研磨されることを特徴とする請求項1から9の何れか一項に記載の組立方法。
- 前記第1基板は、読み取り回路であることを特徴とする請求項1から10の何れか一項に記載の組立方法。
- 前記第2基板は、光検出材料または光放射材料からなることを特徴とする請求項1から11の何れか一項に記載の組立方法。
- 前記埋込層は、シリコン、ゲルマニウム、SiCまたはSiGeから選択される材料からなることを特徴とする請求項1から12の何れか一項に記載の組立方法。
- 前記結合層は、シリコンからなることを特徴とする請求項2から5の何れか一項に記載の組立方法。
- 前記基板の面上に存在する少なくとも1つの埋込層または結合層を平坦化する段階をさらに含み、前記平坦化段階は、前記2つの面を接触させることからなる段階の前に行われることを特徴とする請求項1から14の何れか一項に記載の組立方法。
- 前記2つの基板を分離する前記層内の伝導領域を画定する段階をさらに含み、前記伝導領域は、前記第1基板上に位置する前記領域及び前記第2基板上の前記対応する領域に面して位置され、前記中間層によって可能にされた前記局所的な電気結合を強化することを特徴とする請求項1から15の何れか一項に記載の組立方法。
- 前記2つの基板を分離する前記層内の前記伝導領域を画定する前記段階は、前記第1及び第2基板の前記表面を接触させる段階の前に、前記2つの基板を分離する前記層の注入によって行うことを特徴とする請求項16に記載の組立方法。
- 前記2つの基板を分離する前記層内の前記伝導領域を画定する前記段階は、前記第1及び第2基板の前記面の前記分子結合段階の後に前記組立体の熱処理によって行い、それによって、前記2つの基板を分離する前記層が得られ、前記第1及び第2基板の前記表面に位置する前記領域が伝導合金を形成することを特徴とする請求項16に記載の組立方法。
- 感光検出器を形成する方法であって、
第2基板の結合面と共に第1基板の結合面を有する請求項1から18の何れか一項に記載の前記組立体を含み、
前記第1基板は、少なくともその結合面の前記表面に電気伝導領域を含み、その結合面上に中間層を含み、
前記中間層は、埋込層を含み、前記第1基板の前記面の前記トポログラフィーを覆い、
前記第2基板は、少なくともその表面に、検出される前記光に対して感光性を有する材料からなる検出層を含むことを特徴とする感光検出器の形成方法。 - 前記感光性材料の検出層は、単結晶シリコンからなることを特徴とする請求項19に記載の感光検出器の形成方法。
- 前記感光性材料の検出層は、前記表面にドーピングされることを特徴とする請求項19または20に記載の感光検出器の形成方法。
- 前記結合面の少なくとも前記表面に電気伝導領域を含む前記第1基板は、読み取り回路であることを特徴とする請求項21に記載の感光検出器の形成方法。
- 前記第2基板は、SOIであることを特徴とする請求項19から22の何れか一項に記載の感光検出器の形成方法。
- 前記第2基板は、薄膜化されることを特徴とする請求項19から23の何れか一項に記載の感光検出器の形成方法。
- 前記埋込層は、多結晶シリコン、微結晶シリコン、または、アモルファスシリコンからなることを特徴とする請求項19から24の何れか一項に記載の感光検出器の形成方法。
- 前記埋込層は、前記第2基板と組み立てられる前に、平坦化及び/又は薄膜化されることを特徴とする請求項19から25の何れか一項に記載の感光検出器の形成方法。
- 前記組立体は、検出される前記光に対して透過的な電気伝導材料(ITO)の層で覆われることを特徴とする請求項19から26の何れか一項に記載の感光検出器の形成方法。
- 少なくともその結合面の表面に電気伝導領域を含む第1基板と、
前記第1基板の前記結合表面のトポグラフィーを覆うための十分な厚さで前記第1基板の結合表面に積層された、多結晶シリコン、微結晶シリコン、または、アモルファスシリコンからなる埋込層と、
前記埋込層上に運ばれ、前記検出層と前記埋込層との厚さ内でダイオードを形成するようにドーピングされている単結晶シリコン検出層と、
検出される前記光に透過的な電気伝導材料からなる接触層と、からなる積層体を含む感光検出器。 - 前記検出層は、局所的に絶縁されることを特徴とする請求項28に記載の感光検出器。
- 表面トポログラフィーと少なくとも1つの電気伝導領域とをその結合表面に有する第1基板と、
前記第1基板の前記面のトポログラフィーを覆うために十分な厚さで前記第1基板の前記結合表面に積層された埋込層と、
その結合表面に少なくとも1つの電気伝導領域を含む第2基板であって、前記第1基板の少なくとも1つの前記電気伝導領域に一致して垂直に前記第2基板の少なくとも1つの電気伝導領域が位置し、前記第2基板は、前記埋込層を介して分子結合によって前記第1基板に組み立てられるところの第2基板と、からなる積層体を含む超小型電子構造物。
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FR0451374A FR2872627B1 (fr) | 2004-06-30 | 2004-06-30 | Assemblage par adhesion moleculaire de deux substrats |
PCT/FR2005/050522 WO2006008411A1 (fr) | 2004-06-30 | 2005-06-29 | Assemblage par adhesion moleculaire de deux substrats |
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JP2016174016A (ja) * | 2015-03-16 | 2016-09-29 | 株式会社東芝 | 半導体装置および半導体装置の製造方法 |
JP2018534087A (ja) * | 2015-08-31 | 2018-11-22 | ジーレイ スイッツァーランド エスアー | モノリシックcmos集積ピクセル検出器を備えた光子計数コーンビームct装置 |
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FR2864336B1 (fr) * | 2003-12-23 | 2006-04-28 | Commissariat Energie Atomique | Procede de scellement de deux plaques avec formation d'un contact ohmique entre celles-ci |
US9646869B2 (en) * | 2010-03-02 | 2017-05-09 | Micron Technology, Inc. | Semiconductor devices including a diode structure over a conductive strap and methods of forming such semiconductor devices |
US8507966B2 (en) | 2010-03-02 | 2013-08-13 | Micron Technology, Inc. | Semiconductor cells, arrays, devices and systems having a buried conductive line and methods for forming the same |
US9608119B2 (en) | 2010-03-02 | 2017-03-28 | Micron Technology, Inc. | Semiconductor-metal-on-insulator structures, methods of forming such structures, and semiconductor devices including such structures |
FR2961013B1 (fr) | 2010-06-03 | 2013-05-17 | Commissariat Energie Atomique | Procede pour eliminer des impuretes residuelles extrinseques dans un substrat en zno ou en znmgo de type n, et pour realiser un dopage de type p de ce substrat. |
US8952418B2 (en) | 2011-03-01 | 2015-02-10 | Micron Technology, Inc. | Gated bipolar junction transistors |
US8519431B2 (en) | 2011-03-08 | 2013-08-27 | Micron Technology, Inc. | Thyristors |
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JP2018534087A (ja) * | 2015-08-31 | 2018-11-22 | ジーレイ スイッツァーランド エスアー | モノリシックcmos集積ピクセル検出器を備えた光子計数コーンビームct装置 |
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US20080296712A1 (en) | 2008-12-04 |
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