JP2008502134A5 - - Google Patents

Download PDF

Info

Publication number
JP2008502134A5
JP2008502134A5 JP2007515122A JP2007515122A JP2008502134A5 JP 2008502134 A5 JP2008502134 A5 JP 2008502134A5 JP 2007515122 A JP2007515122 A JP 2007515122A JP 2007515122 A JP2007515122 A JP 2007515122A JP 2008502134 A5 JP2008502134 A5 JP 2008502134A5
Authority
JP
Japan
Prior art keywords
substrate
lower portion
moving
processing system
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2007515122A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008502134A (ja
Filing date
Publication date
Priority claimed from US10/859,975 external-priority patent/US20050269291A1/en
Application filed filed Critical
Publication of JP2008502134A publication Critical patent/JP2008502134A/ja
Publication of JP2008502134A5 publication Critical patent/JP2008502134A5/ja
Withdrawn legal-status Critical Current

Links

JP2007515122A 2004-06-04 2005-05-06 基材を処理するためのプロセス加工システムを動作させる方法 Withdrawn JP2008502134A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/859,975 US20050269291A1 (en) 2004-06-04 2004-06-04 Method of operating a processing system for treating a substrate
PCT/US2005/015928 WO2005122215A1 (en) 2004-06-04 2005-05-06 Method of operating a processing system for treating a substrate

Publications (2)

Publication Number Publication Date
JP2008502134A JP2008502134A (ja) 2008-01-24
JP2008502134A5 true JP2008502134A5 (ko) 2008-05-22

Family

ID=34969045

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007515122A Withdrawn JP2008502134A (ja) 2004-06-04 2005-05-06 基材を処理するためのプロセス加工システムを動作させる方法

Country Status (3)

Country Link
US (1) US20050269291A1 (ko)
JP (1) JP2008502134A (ko)
WO (1) WO2005122215A1 (ko)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7029536B2 (en) * 2003-03-17 2006-04-18 Tokyo Electron Limited Processing system and method for treating a substrate
JP4723871B2 (ja) * 2004-06-23 2011-07-13 株式会社日立ハイテクノロジーズ ドライエッチング装置
US7795148B2 (en) * 2006-03-28 2010-09-14 Tokyo Electron Limited Method for removing damaged dielectric material
US7718032B2 (en) * 2006-06-22 2010-05-18 Tokyo Electron Limited Dry non-plasma treatment system and method of using
US20080078743A1 (en) * 2006-09-28 2008-04-03 Munoz Andres F Elevated temperature chemical oxide removal module and process
US20080217293A1 (en) * 2007-03-06 2008-09-11 Tokyo Electron Limited Processing system and method for performing high throughput non-plasma processing
US20100000684A1 (en) * 2008-07-03 2010-01-07 Jong Yong Choi Dry etching apparatus
US10224224B2 (en) * 2017-03-10 2019-03-05 Micromaterials, LLC High pressure wafer processing systems and related methods
US10622214B2 (en) 2017-05-25 2020-04-14 Applied Materials, Inc. Tungsten defluorination by high pressure treatment
KR102574914B1 (ko) 2017-06-02 2023-09-04 어플라이드 머티어리얼스, 인코포레이티드 보론 카바이드 하드마스크의 건식 스트리핑
US10269571B2 (en) 2017-07-12 2019-04-23 Applied Materials, Inc. Methods for fabricating nanowire for semiconductor applications
US10234630B2 (en) 2017-07-12 2019-03-19 Applied Materials, Inc. Method for creating a high refractive index wave guide
US10276411B2 (en) 2017-08-18 2019-04-30 Applied Materials, Inc. High pressure and high temperature anneal chamber
JP6947914B2 (ja) 2017-08-18 2021-10-13 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高圧高温下のアニールチャンバ
WO2019055415A1 (en) 2017-09-12 2019-03-21 Applied Materials, Inc. APPARATUS AND METHODS FOR MANUFACTURING SEMICONDUCTOR STRUCTURES USING A PROTECTIVE BARRIER LAYER
US10643867B2 (en) 2017-11-03 2020-05-05 Applied Materials, Inc. Annealing system and method
KR102585074B1 (ko) 2017-11-11 2023-10-04 마이크로머티어리얼즈 엘엘씨 고압 프로세싱 챔버를 위한 가스 전달 시스템
KR102622303B1 (ko) 2017-11-16 2024-01-05 어플라이드 머티어리얼스, 인코포레이티드 고압 스팀 어닐링 프로세싱 장치
JP2021503714A (ja) 2017-11-17 2021-02-12 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高圧処理システムのためのコンデンサシステム
CN111699549A (zh) 2018-01-24 2020-09-22 应用材料公司 使用高压退火的接缝弥合
SG11202008256WA (en) 2018-03-09 2020-09-29 Applied Materials Inc High pressure annealing process for metal containing materials
US10714331B2 (en) 2018-04-04 2020-07-14 Applied Materials, Inc. Method to fabricate thermally stable low K-FinFET spacer
US10950429B2 (en) 2018-05-08 2021-03-16 Applied Materials, Inc. Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom
US10566188B2 (en) 2018-05-17 2020-02-18 Applied Materials, Inc. Method to improve film stability
US10704141B2 (en) 2018-06-01 2020-07-07 Applied Materials, Inc. In-situ CVD and ALD coating of chamber to control metal contamination
US10748783B2 (en) 2018-07-25 2020-08-18 Applied Materials, Inc. Gas delivery module
US10675581B2 (en) 2018-08-06 2020-06-09 Applied Materials, Inc. Gas abatement apparatus
WO2020092002A1 (en) 2018-10-30 2020-05-07 Applied Materials, Inc. Methods for etching a structure for semiconductor applications
KR20210077779A (ko) 2018-11-16 2021-06-25 어플라이드 머티어리얼스, 인코포레이티드 강화된 확산 프로세스를 사용한 막 증착
WO2020117462A1 (en) 2018-12-07 2020-06-11 Applied Materials, Inc. Semiconductor processing system
US11901222B2 (en) 2020-02-17 2024-02-13 Applied Materials, Inc. Multi-step process for flowable gap-fill film

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5186120A (en) * 1989-03-22 1993-02-16 Mitsubishi Denki Kabushiki Kaisha Mixture thin film forming apparatus
JP2598353B2 (ja) * 1991-12-04 1997-04-09 アネルバ株式会社 基板処理装置、基板搬送装置及び基板交換方法
US5558482A (en) * 1992-07-29 1996-09-24 Tokyo Electron Limited Multi-chamber system
JP4048387B2 (ja) * 1997-09-10 2008-02-20 東京エレクトロン株式会社 ロードロック機構及び処理装置
US6409837B1 (en) * 1999-01-13 2002-06-25 Tokyo Electron Limited Processing system and method for chemical vapor deposition of a metal layer using a liquid precursor
US6302966B1 (en) * 1999-11-15 2001-10-16 Lam Research Corporation Temperature control system for plasma processing apparatus
US6352623B1 (en) * 1999-12-17 2002-03-05 Nutool, Inc. Vertically configured chamber used for multiple processes
US6951821B2 (en) * 2003-03-17 2005-10-04 Tokyo Electron Limited Processing system and method for chemically treating a substrate

Similar Documents

Publication Publication Date Title
JP2008502134A5 (ko)
WO2004030051A3 (en) System for substrate processing with meniscus, vacuum, ipa vapor, drying manifold
WO2001082368A3 (en) Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module
JP2009533844A5 (ko)
IL176568A (en) Method for processing a semiconductor chip, a semiconductor chip, and a bead-tip removal system for use with a sunset lithography process
TW200722561A (en) Method of surface reconstruction for silicon carbide substrate
EP1717344A4 (en) PROCESS FOR PROCESSING A SUBSTRATE, CATALYST PROCESS LIQUID, AND SUBSTRATE PROCESSING DEVICE
PL1952427T3 (pl) Urządzenie i sposób obróbki chemicznej na mokro płaskich, cienkich substratów w procesie ciągłym
JP2009524249A5 (ko)
WO2009094275A3 (en) Apparatus and method for supporting, positioning and rotating a substrate in a processing chamber
JP2008539594A5 (ko)
TW200644098A (en) Enhanced wafer cleaning method
TW200629416A (en) Semiconductor device and fabrication method thereof
JP2007131942A5 (ja) 基板アンロード装置および基板アンロード方法
JP2011168881A5 (ko)
JP2006190921A5 (ko)
JP2012530381A5 (ja) ワークピース処理システム及びその方法
TW200802595A (en) Method for fabricating semiconductor and eching system
JP2001345294A5 (ko)
JP2009534177A5 (ko)
JP2010508141A5 (ko)
JP2011066342A5 (ko)
JP2001250776A5 (ko)
JP2000323384A5 (ko)
WO2009078121A1 (ja) 半導体基板支持治具及びその製造方法