JP2008306102A - Tape carrier for semiconductor device and method of manufacturing same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a tape carrier for a semiconductor device and method of manufacturing same that improve heat release characteristics of IC chips mounted on COF too. <P>SOLUTION: By means of a tape material as a source material whose first and second copper layers 22A, 22B are disposed on both surfaces of a polyimide resin film 1, a wiring pattern 2 on a predetermined region of which the semiconductor device is mounted is formed by sequentially exposing, developing and etching the first copper layer after a masking tape 23 is bonded to the second copper layer 22B. Further, completion of the tape carrier 10 for the semiconductor device is achieved by peeling the masking tape 23 from the second copper layer 22B and by forming a solder resist 4 on a predetermined region of the wiring pattern 2 after Sn plating 24 of the wiring pattern 2 is carried out. The second copper layer 22B functions as a heat sink to release heat emitted from the mounted semiconductor device. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a tape carrier for a semiconductor device and a manufacturing method thereof, and more particularly, to a tape carrier for a semiconductor device using a COF (Chip On Film) technique and a manufacturing method thereof.

  In a liquid crystal display (LCD) that is mounted on an electronic device such as a display for a personal computer, a mobile phone, and a liquid crystal television and requires high image quality, fine wiring has been advanced. Accordingly, TCP (Tape Carrier Package), a driver IC package for driving the LCD, is required to have fine wiring.

  TCP has a three-layer structure of polyimide tape (for example, 12 to 100 μm thickness × 35 to 70 mm width), adhesive, and copper foil (for example, 18 μm thickness), and the inner lead is a flying lead that is likely to be deformed. The finer wiring pitch is said to be 40 μm. In contrast, COF has a two-layer structure consisting of polyimide tape and copper foil (for example, 8 to 35 μm thick), and the inner leads are in close contact with the polyimide tape, allowing for finer wiring than TCP. It is.

As a conventional tape carrier for semiconductor devices, one side of the base film is used as a chip mounting surface, and a ground layer is provided in a predetermined area facing the chip mounting surface on the other side so that stable grounding can be performed by this ground layer. There are some (for example, refer to Patent Document 1).
JP 2007-27682 A

  However, according to the conventional tape carrier for semiconductor devices, in order to increase the color and color of the LCD, the electrical wiring on the TAB (Tape Automated Bonding) tape is required to be miniaturized. The power consumption of the IC chip for driving the LCD panel increases. As a result, the temperature rise of the IC chip cannot be ignored, so it is necessary to improve the heat dissipation of the IC chip on the COF, but this measure has not been taken conventionally.

  Accordingly, it is an object of the present invention to provide a tape carrier for a semiconductor device and a method for manufacturing the same that can improve the heat dissipation of an IC chip mounted on a COF TAB tape.

  In order to achieve the above object, the present invention provides an insulating film, a copper wiring pattern provided on the first surface of the insulating film and mounted with a semiconductor device at a predetermined position, and the entire second surface of the insulating film. And a heat radiating metal layer provided in the same size as the insulating film.

  Moreover, this invention prepares the tape material which consists of an insulating film which has a 1st copper layer in a 1st surface, and has a 2nd copper layer in a 2nd surface in order to achieve the said objective. A second step of masking the second copper layer of the tape material, and a third step of forming a wiring pattern on the first copper layer based on a photoresist etching process, A method of manufacturing a tape carrier for a semiconductor device, comprising: a fourth step of plating the wiring pattern; and a fifth step of removing the masking from the second copper layer.

  According to the present invention, in the COF TAB tape, the heat dissipation of the mounted IC chip can be improved.

[First Embodiment]
(Configuration of tape carrier for semiconductor devices)
1A and 1B show a tape carrier for a semiconductor device according to a first embodiment of the present invention, where FIG. 1A is a perspective view showing a wiring pattern forming surface, and FIG. 1B is a heat dissipation surface opposite to the wiring pattern forming surface. FIG.

  The semiconductor device tape carrier 10 includes a polyimide resin film 1 which is an insulating film having feed holes 1A provided at predetermined intervals on both sides, a wiring pattern 2 made of copper provided on one side of the polyimide resin film 1, and The polyimide resin film 1 includes a reinforcing frame 3 made of a copper layer having a predetermined width including a feed hole 1 </ b> A on both sides of one side of the polyimide resin film 1, and a solder resist 4 provided in a predetermined area of the wiring pattern 2. .

  The polyimide resin film 1 preferably has a thickness of 38 μm or less in consideration of good flexibility and heat dissipation as a COF.

  The wiring pattern 2 is formed on the surface of the polyimide resin film 1 by a photoresist etching process for a copper layer having a thickness of 12 μm, and is provided so that a connection portion with the external circuit extends from the solder resist 4 at a predetermined interval. And the inner leads 2B provided so that the semiconductor device mounting portion extends from the solder resist 4 and wired at a predetermined interval.

  Further, as shown in FIG. 1B, the semiconductor device tape carrier 10 has a heat dissipation copper layer 5 made of a 12 μm thick copper layer provided so as to cover almost the entire back surface of the polyimide resin film 1. The heat radiating copper layer 5 functions as a heat radiating plate that radiates heat generated by the operation of a semiconductor device such as a driver IC mounted on the inner lead 2 </ b> B from the back surface side of the polyimide resin film 1.

  The heat dissipation copper layer 5 is preferably formed in a size larger than at least the mounting size of the semiconductor device mounted on the inner lead 2B so as to ensure a heat dissipation area.

(Heat dissipation operation of tape carrier for semiconductor devices)
Next, the heat dissipation operation of the semiconductor device tape carrier 10 will be described. A semiconductor device tape carrier 10 in which a semiconductor device (not shown) is mounted as an LCD display driver IC on the inner leads 2B of the wiring pattern 2 shown in FIG. 1 is incorporated in a liquid crystal panel of the LCD display.

  When the power of the LCD display is turned on, the semiconductor device is energized, and the temperature of the semiconductor device rises with the energization. The heat of the semiconductor device is transmitted from the wiring pattern 2 to the polyimide resin film 1 and further transmitted through the polyimide resin film 1 to the heat dissipation copper layer 5 provided on the entire surface opposite to the surface on which the wiring pattern 2 is formed. The heat radiating copper layer 5 radiates heat from the semiconductor device by functioning as a heat radiating plate.

  Since the heat dissipation copper layer 5 is formed on the entire back surface with the same size as the polyimide resin film 1, it is sufficiently large compared to the size of the semiconductor device, and even if the heat dissipation copper layer 5 has a thickness of 12 μm or less, A desired heat dissipation effect can be obtained.

(Method for manufacturing tape carrier for semiconductor device)
FIG. 2 is a flowchart showing a method for manufacturing a tape carrier for a semiconductor device according to the first embodiment of the present invention.

  3A and 3B are diagrams showing a manufacturing process of the tape carrier for a semiconductor device according to the embodiment of the present invention. 3A and 3B show partial cross-sections along the AA portion in FIG.

  Below, the manufacturing method of the tape carrier 10 for semiconductor devices which concerns on embodiment of this invention is demonstrated, referring FIG.2, FIG.3A and FIG.3B.

  First, as shown in FIG. 3A (a), a Cr (chrome) sputter layer is formed on both surfaces of a polyimide resin film 1 having a thickness of 38 μm or less by sputtering. This Cr sputter layer is provided on both sides of the polyimide resin film 1.

  Next, the first and second copper layers 22A and 22B having a thickness of 12 μm or less are formed on both surfaces of the polyimide resin film 1 by performing copper plating on the polyimide resin film 1 having the Cr sputter layer. The material 21 with a double-sided copper layer is produced (S101). This double-sided copper layered material 21 is used as a starting material in the production of a tape carrier for a semiconductor device.

  A double-sided copper layered material in which first and second copper layers 22A and 22B having a thickness of 12 μm or less are previously formed on the polyimide resin film 1 may be prepared and used as a starting material.

  Next, as shown in FIG. 3A (b), a masking tape 23 is attached to the entire surface of the second copper layer 22B to be the heat dissipation copper layer 5 (S102).

  Next, as shown in FIG. 3A (c), a resist 24 is coated on the surface of the first copper layer 22A (S103). Next, exposure for producing the wiring pattern 2 is performed through a photomask (not shown) having a pattern corresponding to the shape of the wiring pattern (S104).

  Next, as shown in FIG. 3A (d), development is performed to remove the resist 24 other than the exposed portion (S105).

  Next, as shown in FIG. 3A (e), the development surface of the first copper layer 22A having the resist 24 corresponding to the wiring pattern 2 is etched (S106), and the first portion of the portion corresponding to the wiring pattern 2 is etched. The copper layer 22A is left.

  Next, as shown in FIG. 3A (f), the resist 24 on the wiring pattern 2 is removed (S107), and the wiring pattern 2 is exposed.

  Next, as shown in FIG. 3B (g), for example, Sn (tin) plating is provided on the exposed surface of the wiring pattern 2 in order to easily and reliably connect a semiconductor device (not shown) and the liquid crystal glass (S108). .

  Next, as shown in FIG. 3B (h), the masking tape 23 is peeled from the second copper layer 22B to be the heat-dissipating copper layer 5 (S109).

  Next, as shown in FIG. 3B (i), a solder resist 4 made of a heat-resistant resin for the purpose of improving insulation and mechanical strength is printed on predetermined portions of the wiring pattern 2 and the polyimide resin film 1 (S110). ). Thus, the semiconductor device tape carrier 10 is completed.

  Next, the semiconductor device tape carrier 10 completed by the process of FIG. 3B (i) is inspected (inspected) (S111), and if there is no problem, it is shipped as a product (S112).

(Effect of the first embodiment)
According to the 1st form, the following effects are acquired.
(1) Since the second copper layer 22B of the double-sided copper layer-attached material 21 in which the first and second copper layers 22A and 22B are formed on both sides of the polyimide resin film 1 is used as a heat sink, emit from the semiconductor device. The heat dissipation of the generated heat can be enhanced.

(2) Moreover, the tape carrier 10 for semiconductor devices of the 1st form can further improve the effect of a heat sink by setting the following conditions.
(A) The thickness of the second copper layer 22B is made larger than the thickness of the first copper layer 22A.
(B) The area of the second copper layer 22B which becomes the heat-dissipating copper layer 5 is made as wide as possible.
(C) The thickness of the polyimide resin film 1 is reduced.
In particular, regarding the thickness of the second copper layer 22B, it has been confirmed that the heat dissipation is improved by forming the second copper layer 22B in thicknesses of 18 μm, 25 μm, and 35 μm in addition to the above-mentioned 12 μm. 18 μm and 25 μm can be selected.

(3) In the first embodiment, in manufacturing the tape carrier 10 for a semiconductor device, the double-sided copper layer-attached material 21 is used as a workpiece, but the masking tape 23 is pasted on the back surface to attach the second copper layer 22B. By protecting, the existing manufacturing process of the TAB tape for single-sided copper layer COF can be employed. Thereby, in the TAB tape manufacturing process for COF, the tape carrier for a semiconductor device provided with a heat sink can be realized at a lower cost without using capital investment while using the double-sided copper layered material 21. .

[Second Embodiment]
FIG. 4 is a partial cross-sectional view of a tape carrier for a semiconductor device according to the second embodiment of the present invention. Here, the cross section cut in the transverse direction in the formation part of the inner lead 2B is shown. Parts having the same configuration and function as those in the first embodiment are given the same reference numerals.

  In the tape carrier 10 for a semiconductor device according to the second embodiment, the inner lead 2B described in FIG. 1A of the first embodiment has a via 22C filled with copper as a material having thermal conductivity. To the heat-dissipating copper layer 5, thereby forming a heat transfer path. In the second embodiment as well, the heat-dissipating copper layer 5 is formed on one side of the polyimide resin film 1.

  The via 22 </ b> C is filled with copper plating, thereby forming a heat transfer path between the heat dissipation copper layer 5 and the wiring pattern 2. The drilling of the polyimide resin film 1 for forming the via 22C can be performed, for example, by punching. In addition, about the material which has heat conductivity, other metal materials, such as aluminum and tungsten other than above-mentioned copper, or the material which has heat conductivity other than metals, such as silicone, may be sufficient.

  In order to manufacture such a tape carrier 10 for a semiconductor device, a polyimide resin film 1 in which fine holes are punched in advance according to the position of the via 22C is prepared, and copper plating is applied to the polyimide resin film 1 Thus, the first copper layer 22A and the second copper layer 22B having a thickness of 12 μm or less described with reference to FIG. 3A are formed on both surfaces of the polyimide resin film 1, and the vias 22C whose inner walls are plated with copper are formed. Other manufacturing steps are the same as the manufacturing method of the semiconductor device tape carrier 10 described in the first embodiment.

  When connecting the inner lead 2B and the heat-dissipating copper layer 5 with the via 22C, it is necessary to take care not to cause an electrical short circuit between the terminals of the semiconductor device. Therefore, it is desirable to form the via 22C only in the inner lead 2B that does not cause an electrical failure, or to electrically separate the heat dissipation copper layer 5 on the positive electrode side and the negative electrode side.

(Effect of the second embodiment)
According to the second embodiment, heat conduction from the portion of the inner lead 2B in the wiring pattern 2 to the heat radiating copper layer 5 through the via 22C can be performed, so that heat dissipation can be further improved.

  The drilling of the polyimide resin film 1 is not limited to the punching process described above, and can be performed by other methods such as etching or laser processing.

[Other embodiments]
The present invention is not limited to the above-described embodiments, and various modifications can be made without departing from or changing the technical idea of the present invention.

  For example, although the heat-dissipating copper layer 5 is provided on the entire back surface of the polyimide resin film 1, it may be configured not to be provided on the reinforcing frame 3. Specifically, the heat-dissipating copper layer 5 where the feed hole 1A is provided is removed with an opening size larger than the size of the feed hole 1A, and as a result, the polyimide resin film 1 is exposed around the feed hole 1A. You may be in the state. By setting it as such a structure, it becomes difficult to produce a burr | flash and a metal scrap inside the feed hole 1A, and it can prevent that the shape defect of 1A of feed holes arises.

  Further, the heat-dissipating copper layer 5 may be provided with a plating of Sn or the like in order to improve the oxidation resistance of the surface, or may be made of pure copper in order to improve the heat dissipation. Further, instead of copper having excellent heat dissipation, the heat dissipation layer may be formed using another metal material having excellent heat dissipation.

  In each of the above-described embodiments, the first copper layer 22A is the wiring pattern 2 and the second copper layer 22B is the heat dissipation copper layer 5, but conversely, the second copper layer 22B is used. The first copper layer 22 </ b> A may be used as the heat dissipation copper layer 5.

1A and 1B show a tape carrier for a semiconductor device according to a first embodiment of the present invention, where FIG. 1A is a perspective view showing a wiring pattern forming surface, and FIG. 1B is a heat dissipation surface opposite to the wiring pattern forming surface. FIG. FIG. 2 is a flowchart showing a method for manufacturing a tape carrier for a semiconductor device according to the first embodiment of the present invention. FIG. 3A is a diagram showing a manufacturing process of the tape carrier for a semiconductor device according to the first embodiment of the present invention. FIG. 3B is a diagram showing a manufacturing process of the tape carrier for a semiconductor device according to the first embodiment of the present invention. FIG. 4 is a partial cross-sectional view of a tape carrier for a semiconductor device according to the second embodiment of the present invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Polyimide resin film, 1A ... Feed hole, 2 ... Wiring pattern, 2A ... Outer lead, 2B ... Inner lead, 3 ... Reinforcement frame, 4 ... Solder resist, 5 ... Copper layer for heat dissipation, 10 ... Tape carrier for semiconductor devices 21 ... Material with double-sided copper layer, 22A ... First copper layer, 22B ... Second copper layer, 22C ... Via, 23 ... Masking tape, 24 ... Resist

Claims (8)

An insulating film;
A copper wiring pattern provided on the first surface of the insulating film and mounted with a semiconductor device at a predetermined position;
A tape carrier for a semiconductor device, comprising: a heat radiating metal layer provided on the entire second surface of the insulating film in the same size as the insulating film.   The heat dissipation metal layer is a copper layer connected to the copper wiring pattern formed on the first surface by a thermally conductive material provided in an opening provided in the insulating film. The tape carrier for a semiconductor device according to claim 1.   The tape carrier for a semiconductor device according to claim 1, wherein the metal layer for heat dissipation is a copper layer having a thickness of 12 μm or less.   The tape carrier for a semiconductor device according to claim 1, wherein the metal layer for heat dissipation is a solid copper layer.   2. The tape carrier for a semiconductor device according to claim 1, wherein the metal layer for heat dissipation is a copper layer having a tin plating on the surface. A first step of preparing a tape material comprising an insulating film having a first copper layer on a first surface and a second copper layer on a second surface;
A second step of masking the second copper layer of the tape material;
A third step of forming a wiring pattern on the first copper layer based on a photoresist etching process;
A fourth step of plating the wiring pattern;
And a fifth step of removing the masking from the second copper layer. A method of manufacturing a tape carrier for a semiconductor device.   7. The method of manufacturing a tape carrier for a semiconductor device according to claim 6, wherein in the first step, the tape material in which the second copper layer is provided on the entire second surface is prepared.   The said 1st process prepares the said tape material which has the said 1st copper layer and the 2nd copper layer whose thickness is larger than the said 1st copper layer, It is characterized by the above-mentioned. Of manufacturing a semiconductor device tape carrier.

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