JP2008305936A - Semiconductor light emitting device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device which can emit the light having a desired wavelength and a high luminance, and is excellent in life characteristics. <P>SOLUTION: The semiconductor light emitting device includes the one wherein a nearly cylindrical outside cap 6 covers further the outer-surface side of a nearly cylindrical sealing cap 4, and in short, has a double cap structure. The emitting light emitted from a semiconductor laser element 2a positioned in a sealing region 12 sealed in an airtight state with the sealing cap 4 and with a stem 3a so transmits through a light transmitting body 5 supported by the sealing cap 4, and further, is so subjected to a wavelength conversion performed by a wavelength converting member 7 fastened to the outside cap 6 and having a predetermined light receiving area as to be able to emit the light having a different wavelength from the one of the semiconductor light emitting element 2. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a semiconductor light-emitting device including a semiconductor light-emitting element, and more particularly to a semiconductor light-emitting device capable of emitting emitted light having a wavelength different from that of a light source.

  Nitride-based compound semiconductor light-emitting elements emit light of a bright color that is small and power efficient. In addition, a light emitting element which is a semiconductor element does not have a concern about a broken ball. Further, it has excellent initial driving characteristics and is strong against vibration and repeated on / off lighting. Because of such excellent characteristics, semiconductor light emitting devices such as light emitting diodes (LEDs) and laser diodes (LDs) are used as various light sources. In particular, when a semiconductor laser is used as a light source, the electro-optical conversion efficiency is higher than that of a light-emitting diode, and a significant increase in output is possible. Therefore, high brightness such as light sources for projectors and headlights for vehicles is used. Supply as a white light source is expected.

  For example, Patent Document 1 discloses a light source device capable of outputting white light using a semiconductor laser as a light source, which is shown in FIG. In the illumination light source device 100 of FIG. 16, a plurality of semiconductor laser elements 101 are mounted on a heat sink 102, a diffusion lens 103 is disposed in front of each semiconductor laser element 101, and a vacuum glass tube 105 in which argon gas or the like is enclosed. The phosphor 104 is applied to the inner wall surface. The laser beam light output from the semiconductor laser element 101 is diffused by the diffusion lens 103, and the fluorescent material of the phosphor 104 is excited by this diffused light, and visible light such as white light is obtained.

However, in this illumination light source device 100, the diffused light diffused by the diffusing lens 103 is not uniformly irradiated on the entire surface of the glass tube 105. As a result, a difference in the amount of conversion of light excited by the phosphor 104 is caused by the portion of the glass tube 105. That is, there is a problem that color unevenness occurs in the output light from the light source device. Further, although there is no specific disclosure regarding a method of arranging the phosphor 104 on the inner wall of the glass tube 105, generally, a binder that joins both of them generates bubbles as a high-power laser is irradiated. It causes a decrease in efficiency. Further, the binder itself is further deteriorated, and the phosphor 104 is peeled off from the glass tube 105, so that an appropriate wavelength conversion amount cannot be obtained, which may cause color unevenness. Furthermore, since the phosphor distribution area covers the entire surface of the glass tube 105, there is a problem that the luminance of light obtained from the apparatus is small.
Further, the semiconductor laser element is likely to deteriorate unless it is sealed in an airtight state. Accordingly, the present situation is that a light emitting device that sufficiently satisfies both the sealed state capable of maintaining the life of the element and the wavelength conversion member capable of emitting the emitted light having a desired wavelength has not been realized.
JP-A-7-282609

  The present invention has been made in view of such conventional problems. An object of the present invention is to provide a semiconductor light emitting device that can emit high-luminance light having a desired wavelength and has excellent life characteristics.

  In order to achieve the above object, a first semiconductor light emitting device of the present invention includes a semiconductor light emitting element, a support capable of fixing the semiconductor light emitting element, a light transmitting body that transmits light emitted from the semiconductor light emitting element, and A sealing cap that is fixed to the support and supports the light transmitting body, and a wavelength conversion member that is disposed outside the sealing cap and that can convert the wavelength of at least part of the transmitted light transmitted from the light transmitting body. And an outer cap that supports the wavelength conversion member.

  The second semiconductor light-emitting device of the present invention includes a semiconductor light-emitting element, a support that is at least partially opened, and capable of fixing the semiconductor light-emitting element, and a support that closes the opening of the support. A sealing cap that is fixed to the support, a light transmitting member that is fixed to the support or the sealing cap, and that transmits light emitted from the semiconductor light emitting element, and that is outside the support or the sealing cap and is supported A wavelength conversion member that is fixed on the body and capable of wavelength-converting at least a part of transmitted light transmitted from the light transmission body, and an outer cap that supports the wavelength conversion member.

  In the third semiconductor light emitting device of the present invention, the sealing cap or / and the outer cap are fixed to the support in a thermally conductive state, and the central axis of the light transmitting member is extended from the semiconductor light emitting element. It is substantially the same as the optical axis of the incident light, and a wavelength conversion member is arranged on the central axis.

  In the fourth semiconductor light emitting device of the present invention, the maximum value of the diameter of the wavelength conversion member is

(A is a direction substantially orthogonal to the light traveling direction and is the maximum value of the diameter of the cross section of the wavelength conversion member. L is the distance between the semiconductor light emitting element and the wavelength conversion member. R is the semiconductor light emission. (The spread angle of the light emitted from the element.)
It is characterized by being in the range of

  The fifth semiconductor light emitting device of the present invention is characterized in that at least a part of the sealing cap is exposed to the outside.

  The sixth semiconductor light emitting device of the present invention is characterized in that the outer surface of the sealing cap and the inner surface of the outer cap have contact areas.

  In the seventh semiconductor light emitting device of the present invention, the sealing cap and the outer cap have a substantially cylindrical shape opened inside, and the diameter of the substantially cylindrical side surface of the outer cap is the sealing cap. The outer surface of the substantially cylindrical side surface of the sealing cap is in contact with the inner surface of the substantially cylindrical side surface of the outer cap, and the outer cap is in contact with the support. The sealing cap is located outside and is exposed to the outside in a separation region between the outer cap and the support.

  In the eighth semiconductor light-emitting device of the present invention, at least one of the sealing cap and the outer cap has a flange region that is substantially parallel to the support and bent outward at the end. And the heel region and the support are fixed.

  In the ninth semiconductor light emitting device of the present invention, the ridge region of the sealing cap is connected to the support, and the outer cap is in contact with the outer surface side of the ridge region of the sealing cap. The heel region of the stopper cap is narrowly attached to the support and the outer cap, and at least a part of the heel region is exposed to the outside, and the connection region between the heel region of the sealing cap and the support is The contact area between the heel area and the outer cap is larger than the contact area.

  The tenth semiconductor light emitting device of the present invention is characterized in that the diameter of the light transmitting body is smaller than the diameter of the wavelength conversion member.

  The eleventh semiconductor light-emitting device of the present invention is characterized in that the light transmitting body is in the form of a lens.

  In a twelfth semiconductor light-emitting device of the present invention, the semiconductor light-emitting element is a semiconductor laser element or an edge-emitting LED having an emission peak wavelength at 360 to 800 nm.

  In the thirteenth semiconductor light emitting device of the present invention, the wavelength conversion member contains a phosphor.

In the fourteenth semiconductor light emitting device of the present invention, the phosphor is selected from the group consisting of LAG, BAM, BAM: Mn, YAG, CCA, SCA, SCESN, SESN, CESN, CASBN, and CaAlSiN ₃ : Eu. It contains at least one kind.

  According to a fifteenth semiconductor light emitting device of the present invention, the light transmitting body or the wavelength conversion member has a multilayer film capable of transmitting only a specific wavelength on at least a surface facing the semiconductor light emitting element.

  In addition, the sixteenth semiconductor light emitting device of the present invention is characterized in that at least the surface on the light emitting surface side of the light transmitting body or wavelength converting member is processed to have a height difference.

  In addition, the seventeenth semiconductor light emitting device of the present invention is characterized in that the light transmitting body or the wavelength conversion member contains a filler.

  According to the semiconductor light emitting device of the first or second invention, light emitted from the hermetically sealed semiconductor light emitting element is transmitted through the light transmitting body, and at least a part of the transmitted light is wavelength converted by the wavelength converting member. it can. In particular, the semiconductor light-emitting element can be doubled, and the air-tightness of the semiconductor light-emitting element is further increased, so that the life characteristics of the element can be improved. Further, a light emitting device capable of emitting light having a desired wavelength can be obtained by mixing light from the light source and wavelength-converted light.

  According to the semiconductor light emitting device of the third, fourth, tenth, eleventh, sixteenth and seventeenth inventions, the emitted light from the light source transmitted through the light transmissive body efficiently travels to the wavelength conversion member, and the wavelength conversion member Since uneven distribution of the amount of received light can be reduced, high-luminance outgoing light with little color unevenness with a constant color mixing ratio between light from the light source and wavelength-converted light can be obtained. In particular, a support or cap that supports the semiconductor light emitting device and the wavelength conversion member that can serve as a heat source is provided separately, and the sealing cap or / and the outer cap are fixed in a thermally conductive state with the support, thereby providing a heat dissipation path. Can be separated to obtain a high heat dissipation effect.

  According to the semiconductor light emitting device of the eighth aspect of the invention, since the connection area between the cap and the support body is increased, the degree of adhesion and heat dissipation of both are increased.

  According to the semiconductor light emitting device of the fifth invention, the heat transmitted to the sealing cap can be directly radiated to the outside air, so that the heat dissipation of the sealing cap can be further improved and the deterioration of the characteristics of the semiconductor light emitting element can be suppressed. .

  According to the semiconductor light emitting device of the sixth aspect of the invention, the wavelength conversion member can be stably supported. As a result, the arrangement of the caps is facilitated so that the central axes of the light source, the light transmitting body, and the wavelength conversion member are substantially the same in the light traveling direction. As a result, the light transmission body and the wavelength conversion member can be arranged only in a region where almost all of the light from the light source travels, so that the wavelength conversion rate can be improved and the light loss can be reduced. That is, high-intensity light with stable wavelength conversion and little color unevenness can be emitted from the light emitting device.

  According to the semiconductor light emitting device of the seventh invention, in the structure in which the outer cap covers the outer surface of the sealing cap, the substantially cylindrical side surfaces of both caps are in contact with each other at the arc surface, so that the sealing cap Thus, the outer cap can be easily and stably fixed. In addition, as described above, the positioning of the wavelength conversion member supported by the cap can be precisely realized. In addition, since a part of the sealing cap is exposed to the outside, there is an effect of increasing the heat dissipation effect.

  According to the semiconductor light emitting device of the ninth invention, the manufacturing method can be simplified since the welding method of both caps can be made the same. In addition, since part of the sealing cap is exposed to the outside, heat dissipation is improved.

  According to the semiconductor light emitting devices of the twelfth to fourteenth aspects, the light emitting device capable of emitting a desired wavelength can be obtained by controlling the wavelength of the emitted light from the light source or the color mixing ratio with the wavelength-converted light.

  According to the semiconductor light emitting device of the fifteenth aspect, it is possible to remarkably reduce the fact that predetermined light becomes return light to the semiconductor light emitting element side, so that the characteristics of the semiconductor light emitting element can be improved. Moreover, the light extraction efficiency in the light emitting device can be improved as a whole.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the embodiment described below exemplifies a semiconductor light emitting device for embodying the technical idea of the present invention, and the present invention does not specify the semiconductor light emitting device as follows. In addition, the member shown by the claim is not what specifies the member of embodiment. In particular, the dimensions, materials, shapes, relative arrangements, and the like of the component parts described in the embodiments are not intended to limit the scope of the present invention unless otherwise specified, and are merely explanations. It is just an example. Note that the size, positional relationship, and the like of the members shown in each drawing may be exaggerated for clarity of explanation. Furthermore, in the following description, the same name and symbol indicate the same or the same members, and detailed description thereof will be omitted as appropriate. Furthermore, each element constituting the present invention may be configured such that a plurality of elements are constituted by the same member and the plurality of elements are shared by one member, and conversely, the function of one member is constituted by a plurality of members. It can also be realized by sharing.

(Construction)
As an example of the semiconductor light emitting device of Example 1, a perspective view of the semiconductor laser device 1 is shown in FIG. 1, and a schematic sectional view taken along line II-II ′ in FIG. 1 is shown in FIG. The semiconductor laser device 1 mainly includes a semiconductor light emitting element 2 and a support body 3 for fixing the semiconductor light emitting element 2, a light transmitting body 5 and a sealing cap 4 for supporting the light transmission body 5, a wavelength conversion member 7 and an outer cap for supporting the same. 6.

  In the semiconductor laser device 1 shown in FIGS. 1 and 2, a semiconductor light emitting element 2 as a light source is fixed in a thermally conductive state above a substantially disc-shaped support 3, and a lead 8 is connected below. Has been. The lead 8 can be electrically connected to the external electrode, and can thereby supply power to the semiconductor laser device 1. In addition, a columnar stem column 9 is placed in the central region of the upper surface of the support 3. However, the support body 3 and the stem column body 9 are individually named according to the location for convenience and are not necessarily different members. Both can also be comprised by the same member, and can reduce the number of parts of a product by this. A semiconductor laser element 2a, which is the semiconductor light emitting element 2, is mounted on the side surface of the stem column 9 via an adhesive such as Au-Sn. Further, although not shown, the semiconductor laser element 2a is electrically connected to the lead 8 via a conductive member such as a wire, and is thereby electrically connected to the external electrode. The semiconductor laser element 2a is provided with a light emitting surface 13 for emitting light on the upper surface (upper side in FIG. 2), and the emitted light from the semiconductor laser element 2a is in the extending direction of the lead 8 as shown by the arrow in FIG. The process proceeds in the opposite direction, that is, upward in FIG. In addition, the light emission surface in this specification does not mean only the surface from which light is emitted from all the surfaces, but also includes the surface from which light is emitted from a part of the surface. Further, in this specification, the term “upper” in the positional configuration or the like is not limited to the case where the upper surface of the substrate is necessarily formed in contact with the upper surface. It is used in a sense that includes other inclusions in between.

  Further, as shown in FIG. 2, the sealing cap 4 is attached so as to include the semiconductor laser element 2a and the stem column body 9 on which the semiconductor laser element 2a is mounted. The sealing cap 4 according to the first embodiment has a substantially cylindrical shape in which at least a part of the inside is opened, and a bottom portion is connected to an edge peripheral region of the support 3. Further, the light transmitting body 5 is mounted so as to close the opening portion of the sealing cap 4, whereby the internal opening formed by the support 3 and the sealing cap 4 is hermetically sealed. The sealing region 12 is configured. By placing the semiconductor laser element 2a in the sealing region 12, the life characteristics of the semiconductor laser element 2a can be improved.

  Further, with respect to the opening portion of the sealing cap 4, in the semiconductor laser device 1 of FIG. 2, the emission direction of the semiconductor laser element 2a is formed on a part of the upper surface of the sealing cap 4 that receives the emitted light of the semiconductor laser element 2a. 1 is formed with a first through hole 10 penetrating the inside and outside of the cap. A light transmitting body 5 capable of transmitting at least part of the light emitted from the semiconductor laser element 2 a is fixed to the first through hole 10. In other words, the light transmitting body 5 is supported by the sealing cap 4. Has been. The central axis of the diameter of the light transmitting body 5 is substantially coaxial with the optical axis of the semiconductor laser element 2a that is a light source. Further, in this specification, “diameter” means a diameter, but even if it is defined by “diameter”, it may mean not only a circle but also a width and a length.

  Further, in the semiconductor laser device 1 according to the first embodiment, as shown in FIG. 2, the outer surface side of the substantially cylindrical sealing cap 4 is further covered with the substantially cylindrical outer cap 6. A cap structure is provided. The diameter and height of the substantially cylindrical outer cap 6 shown in FIG. 2 are larger than the diameter and height of the sealing cap 4, and an opening is formed inside the substantially cylindrical cap 6. . The outer cap 6 is connected upward from the peripheral edge of the support 3 and surrounds the outer periphery of the sealing cap 4. Further, in the outer cap 6, a second through-hole 11 is formed in a region that receives light emitted from the semiconductor laser element 2 a and penetrates the inner and outer sides in the cap thickness direction. The wavelength conversion member 7 is sealed in the second through hole 11, in other words, the wavelength conversion member 7 is supported by the outer cap 6. The wavelength conversion member 7 can convert the wavelength of at least a part of the received light, and can emit light having a wavelength different from that of the light source to the outside of the apparatus. Further, the wavelength converting member 7 and the light transmitting body 5 are positioned so as to be separated and opposed to each other, and the central axis is substantially coaxial with the diameter of both. The individual members will be described below.

(Support)
The material of the support 3 and the stem column 9 is not particularly limited as long as it has good adhesion to the sealing cap 4 and the outer cap 6 and good heat dissipation. For example, at least W or Mo in copper or copper An alloy containing any one of the above, Fe, and the like can be given. The support 3 and the stem column 9 are preferably a combination of materials having similar coefficients of thermal expansion. Thereby, both bondability can be improved. In addition, the shape of the support 3 is not limited as long as the semiconductor light emitting element 2 can be fixed in an airtight state in an internal space configured with a sealing cap 4 including a light transmitting body described later. For example, in FIG. 2, a configuration is adopted in which the support body 3 is a substantially disk-shaped plane, and a substantially cylindrical sealing cap 4 having a light transmitting body 5 is installed above.

  On the other hand, another semiconductor laser device 1f shown in FIG. 3 has a substantially cylindrical support 3b opened in the lateral direction with the emission direction of the semiconductor light emitting element 2 of the light source as the lateral direction. The opening is closed by a light transmitting body 5 that can transmit light emitted from the light source. In addition, the support body 3b can also provide an opening part in another place in addition to the advancing direction side of the light source, that is, the region where the light transmitting body 5 is formed. For example, in FIG. 3, if an opening region is provided on the side of the support that faces the mounting surface of the semiconductor light emitting element 2 (the upper side in FIG. 3), the effect of facilitating mounting of the semiconductor light emitting element 2 can be obtained. . In this case, the semiconductor light emitting element 2 can be sealed by closing the opening region with a sealing member such as a sealing cap 4b. In other words, the semiconductor light emitting element 2 located in the internal space formed by the support 3b and the sealing cap 4b can be in an airtight state. Furthermore, since the pedestal on which the semiconductor light emitting element 2 is mounted, the package, the heat radiating member, the stem, and the like can be made airtight in the internal space formed by connecting different members to these, members such as the pedestal and the package It can be employed as an alternative member having the function of the support 3 or the sealing cap.

  On the other hand, in the semiconductor laser device 1g shown in FIG. 4, the outer cap 6 is not directly connected to the support 3d but is connected to the peripheral region of the first through hole 10 on the sealing cap 4d. Has been. In addition, the outer cap 6 is formed with a second through hole 11 that is substantially the same in the axial direction as the first through hole 10, and a wavelength conversion member 7 is attached to the second through hole 11. In other words, the semiconductor laser device 1g has a double structure of a cap in which only the periphery of the mounting region of the light transmitting body 5 that closes the first through hole 10 of the sealing cap 4d is covered with the outer cap 6. . Accordingly, since the region where there is a high possibility of peeling, that is, the connection region between the sealing cap 4d and the light transmitting body 5 which are different members can be efficiently covered with the outer cap 6, the semiconductor placed inside The entire semiconductor laser device can be reduced in size while maintaining the airtightness of the light emitting element. Furthermore, since the outer cap 6 does not cover the support 3d, the area of the support 3d on which the semiconductor light emitting element 2 is directly mounted can be exposed to the outside air, and the heat dissipation effect is enhanced.

  Further, in the semiconductor light emitting device 1 of FIGS. 1 to 4 according to Example 1, the stem 3a made of Fe is used as the support 3, and the stem 3a and the stem pillar 9 made of Cu are joined by soldering. Thereby, the joining property with the sealing cap 4 connected to the stem 3a and the heat dissipation of the light source placed on the stem column 9 can be improved. However, in order to simplify the manufacturing process, the stem 3a and the stem column 9 can be formed as an integral part by molding or the like. In this case, for example, a multi-layer such as a two-layer structure containing Cu in Fe can be considered.

(Cap for sealing)
The sealing cap 4 that supports the light transmitting body 5 is made of a material capable of hermetically sealing the internal space in which the semiconductor laser element 2 a is placed as described above, that is, the bonding between the stem 3 a to be connected and the light transmitting body 5. The material is not particularly limited as long as it is a material excellent in performance and can dissipate conduction heat from a heat source such as the semiconductor laser element 2a. Examples include Cu, Al, Ni, or an alloy of Ni and Fe, Fe, an iron-nickel-cobalt alloy (Kovar), stainless steel (SUS), and the like. SUS is an alloy steel containing chromium in iron, and may further contain nickel and molybdenum. The stem 3a and the sealing cap 4 are preferably made of a material that improves resistance weldability, for example, by being joined by resistance welding. In Example 1, the sealing cap 4 made of Kovar and the stem 3a made of Fe were welded by resistance welding. More specifically, in the sealing cap 4, a projection is formed on the surface to be joined to the stem 3a, and projection welding is performed between the projection and the stem 3a by applying pressure with a relatively large electrode. Thereby, the sealing cap 4 and the stem 3a can be stably joined, and the airtightness of the internal space constituted by both can be improved. In addition, an inert gas, air, or the like can be used for hermetic sealing. Specifically, helium, neon, argon, krypton, xenon, radon, nitrogen, oxygen, fluorine, carbon monoxide, carbon dioxide, a combination thereof, or dry air can be used.

  Furthermore, the shape of the stem 3a and the sealing cap 4 according to the first embodiment is as long as the semiconductor laser element included in the sealing region 12 formed by connecting the both can be kept airtight. There is no particular limitation. For example, the stem 3a having a concave shape and opening in the upper part, and a planar sealing cap 4 for sealing the upper surface can be used. Further, from the viewpoint of maintaining an airtight state in the sealing region 12, it is preferable to reduce the number of parts existing in the sealing region 12. Ideally, only the semiconductor laser element as the light source should be placed. However, the thermistor (temperature sensor) for detecting the temperature of the semiconductor laser element 2a, a Peltier module, a photodiode (light receiving element), a Zener diode (protective element), A lens, a submount, or the like can be provided. As a result, the driving state of the semiconductor laser element 2a can be grasped or protected, and the life characteristics of the element can be further improved.

(Light transmitting body)
Further, in the sealing cap 4, the first through hole 10 provided in the light receiving region for receiving the emitted light from the light source is penetrated in the thickness direction of the cap, and the light emitting surface of the semiconductor laser element 2a 13 and spaced apart. The light transmitting body 5 can be fixed in the first through hole 10 with an adhesive such as low melting point glass, or the adhesive 5 is not used and the light transmitting body 5 made of glass and the sealing cap 4 are not used. Both can be fixed by chemical reaction. As a result, the through region of the first through hole 10 is closed. In other words, the light transmitting body 5 is supported by the sealing cap 4. The light transmitting body 5 allows at least a part of the emitted light from the semiconductor laser element 2a to be transmitted to the outside of the sealing cap 4, and preferably transmits almost all of the emitted light from the semiconductor laser element 2a. It shall be possible. Furthermore, the central axis in the diameter of the light transmitting body 5 is substantially equal to the optical axis in the outgoing light of the semiconductor laser element 2a. The diameter of the light transmitting member 5 is not particularly limited as long as the light emitted from the semiconductor laser element 2a can travel almost entirely. In this specification, “almost all” means 80% or more of the light, and within this range, the light extraction efficiency from the light source to the outside of the semiconductor laser device 1 increases. For example, the light-receiving side shape of the light transmitting body 5 can be substantially the same as the light emission pattern of the semiconductor laser element 2a or a circular shape. This is because the semiconductor laser element 2a, which is a light source, is easy to guide light in one direction because of high directivity of emitted light. Therefore, the diameter of the light transmitting body 5 is sufficient if it is a diameter that can cover the emitted light from the semiconductor laser element 2a, and it is not necessary to make the light incident portion larger than necessary. In other words, the shape on the light receiving side of the light transmitting body 5 only needs to have an area of a light shape in consideration of the emission pattern of the semiconductor laser element 2a and the distance between the semiconductor laser element 2a and the light transmitting body 5. .

  Thus, if the shape and area on the light receiving side of the light transmitting body 5 are substantially the same as that of the light emitting surface 13 of the semiconductor laser element 2a, almost all of the emitted light with high directivity from the semiconductor laser element 2a can be obtained. In addition to being able to guide the light into the light transmitting body 5, it is possible to prevent the light that has once traveled into the light transmitting body 5 from returning to the semiconductor laser element 2 a side as return light.

  In addition, the light transmitting body 5 has a substantially annular shape having a consistently sized diameter between both ends, a reverse tapered shape in which the diameter increases in the light traveling direction, or a half in which the diameter enlargement ratio decreases in the light traveling direction. It may be a circular shape or a plano-convex shape. For example, if the diameter of the light transmitting body 5 is changed between the light receiving side and the light emitting side, specifically, the diameter on the light emitting side is made larger than that on the light receiving side, the light traveling into the light transmitting body 5 However, it is possible to prevent the laser beam from returning to the semiconductor laser element 2a due to reflection on the wall of the first through hole 10 or the like. If the above structure is satisfied, the shape of the light transmitting body 5 is not particularly limited. For example, in the semiconductor laser device 1 according to FIGS. 1 and 2, the disk-shaped light transmitting body 5 that can be fitted into the cylindrical first through hole 10 is used. Thereby, since the diameter in a penetration area is constant, manufacture of parts can be made easy and generation | occurrence | production of inferior goods can be suppressed and the improvement of a yield can be implement | achieved.

  The light transmitting body 5 has a function of transmitting at least part of light, and is not limited to a transparent color. Examples of the material of the light transmitting body 5 include glass such as borosilicate glass, resin, quartz, sapphire, and the like. Furthermore, the light transmission body 5 is not limited to a single layer, and can be a multilayer having a function for each layer. As an example, various light transmitting bodies are shown in FIG. 5A has a two-layer structure including an AR coating (antireflection coating) layer 20 and a glass layer 21 formed on the light receiving surface side. The AR coat can be composed of a dielectric multilayer film or the like. Specifically, it is a high-efficiency reflector in which reflected wavefronts from the boundary surfaces of the respective layers overlap each other by alternately laminating a dielectric film having a high refractive index and a dielectric film having a low refractive index. By containing the AR coating layer 20, the wavelength can be selectively transmitted. Preferably, the emitted light from the semiconductor laser element 2a can be transmitted, but the light having the wavelength converted by the wavelength conversion member 7 cannot be transmitted, thereby preventing the return light from traveling to the semiconductor laser element. . Thereby, the optical loss of the light emitting device can be reduced, and the deterioration of the characteristics of the semiconductor laser element can be prevented.

  Furthermore, the light transmissive body 5 can include, for example, a lens such as a spherical lens, an aspherical lens, a cylindrical lens, or an elliptic lens, and can thereby control the wavefront of light emitted from the light source. Further, the lens may have any shape as long as the light emitted from the light source is collected on the wavelength conversion member 7. The lens is separated from the light transmitting body 5 and is a separate member. A plurality of sheets may be arranged side by side. The lens can be formed of inorganic glass, resin, or the like. Thus, a lens is provided between the excitation light source and the wavelength conversion member 7, and the excitation light emitted from the excitation light source via the lens can be led to the wavelength conversion member 7, thereby being emitted from the excitation light source. The excitation light can be condensed and efficiently led to the wavelength conversion member 7.

  5B has the same structure as that shown in FIG. 5A, but the surface of the glass layer 21 on the light emitting side is subjected to uneven processing. The unevenness processing in FIG. 5B is a shape processed so that a certain continuous height difference is generated, and the shape of the processing is not particularly limited. Since the light transmitting body 5 is formed into a concavo-convex shape, the traveling direction of light can be diffused, and the wavelength conversion member 7 located on the traveling direction side can be evenly irradiated with light. As a result, the difference in the amount of received light can be reduced at the portion of the wavelength conversion member 7, that is, the wavelength conversion amount becomes uniform, so that the color unevenness of the light emitted from the apparatus can be reduced.

  Further, the light transmitting body 5c in FIG. 5C has a two-layer structure including the AR coating layer 20 and the glass layer 21 in the order of stacking, like the light transmitting bodies 5a and 5b. However, the glass 21 of the light transmitting body 5c is a filler-containing layer in which fillers are mixed. In addition, the filler content layer in this specification is a member containing the material which diffuses and / or scatters and reflects the light which progressed to the light transmissive body 5 among the light from the semiconductor laser element 2a. Thereby, the excitation light can be uniformly applied to the wavelength conversion member and the like, and the color unevenness is reduced. Examples of the filler material contained in the filler-containing layer include aluminum oxide, silicon dioxide, titanium dioxide (anatase type, rutile type), zinc oxide, cerium oxide, and α-iron oxide. It is possible to include at least one selected from these materials.

  In the above example, the light transmitting bodies 5a, 5b, and 5c having a two-layer structure have been described. However, the present invention is not limited to this, and a light transmitting body having three or more layers may be used. For example, in the light transmitting body 5d of FIG. 5D, the upper and lower surfaces of the intermediate glass layer 21 are covered with the AR coating layers 20 and 20b. Thereby, reflection of the light in the interface which contacts the air layer on the surface of the glass layer can be reduced by the AR coating layer.

(Wavelength conversion member)
The wavelength conversion member absorbs part or all of the excitation light emitted from the excitation light source, converts the wavelength, and emits light in a longer wavelength range than the excitation light from the light source, for example, red, green, blue, and these Can emit light having an emission spectrum in yellow, blue-green, orange, or the like, which is an intermediate color. Therefore, the type of the wavelength conversion member is not limited as long as it is made of a material capable of realizing such a function. That is, the wavelength conversion member converts a part or all of the light emitted from the excitation light source into light having a light emission peak wavelength on the long wavelength side and derives it.

  Further, the wavelength conversion member 7 of Example 1 is obtained by solidifying a phosphor as a wavelength conversion substance into a disk shape, and is fixed to the second through hole 11 of the outer cap 6 with glass, an adhesive, or the like. This closes the second through hole 11 of the outer cap 6. In addition, the shape of the wavelength conversion member 7 is preferably a shape that can guide light toward the light emission side 18 direction of the wavelength conversion member 7 (upward direction in FIG. 2). The method of bonding with the cap will be described separately as an application example of Example 1.

  As an example of the traveling direction of light, as indicated by the arrow in FIG. 2, the light emitted from the light emitting surface 13 of the semiconductor laser element 2 a travels to the wavelength conversion member 7 through the light transmitting body 5. The light emitting surface 13, the light transmitting member 5, and the wavelength converting member 7 of the semiconductor laser element 2a are spaced apart from each other, and the wavelength converting member 7 is on the optical axis of the emitted light from the semiconductor light emitting element 2. It is arranged. If the central axis in the diameter of the wavelength conversion member 7 and the optical axis from the light source are substantially the same, the difference in wavelength conversion amount due to the uneven distribution of the amount of light received at the site of the wavelength conversion member 7 can be reduced. Is unlikely to occur. However, the light emitting surface 13 of the semiconductor light emitting element 2 and the light receiving surface or / and the emitting surface of the wavelength converting member 7 do not necessarily have to be positioned in parallel. For example, the wavelength converting member 7 is on the optical axis of the semiconductor light emitting element 2. Alternatively, the distance between the two may be different depending on the part, such as being arranged obliquely. Thereby, the light which returns to the direction of the semiconductor light-emitting device 2 from the wavelength conversion member 7 side can be reduced. That is, the light extraction efficiency to the outside can be improved, and deterioration of the semiconductor light emitting element 2 can be suppressed. Moreover, in the wavelength conversion member 7, by providing a reflection member on the light emission side, it is possible to emit the light whose wavelength has been converted by the wavelength conversion member 7 in an arbitrary direction. The diameter of the wavelength conversion member 7 can be designed in consideration of the distance from the semiconductor light emitting element 2 to the wavelength conversion member 7, the spread angle of the emitted light from the semiconductor light emitting element 2, and the like. Specifically, it is preferable to satisfy the following range.

  However, A (mm) is a direction substantially orthogonal to the light traveling direction, and is the maximum value of the diameter in the cross section of the wavelength conversion member 7. L (mm) is the distance between the semiconductor light emitting element 2 and the wavelength conversion member 7. R (°) is a spread angle of the emitted light from the semiconductor light emitting element 2.

  If the wavelength conversion member 7 has a diameter larger than the above range, the received light amount of laser light with strong directivity is unevenly distributed depending on the part of the wavelength conversion member 7. That is, since a difference occurs in the amount of wavelength conversion, the color mixture ratio between the light of the semiconductor laser element 2a, which is a light source, and the light subjected to wavelength conversion by the wavelength conversion member 7 is not constant, and color unevenness occurs in the emitted light emitted from the apparatus. Will occur. Furthermore, since the distribution region of the wavelength conversion member 7 capable of receiving light is large, the luminance per unit area becomes small, and the emitted light with high overall luminance cannot be obtained. On the other hand, if the diameter of the wavelength conversion member 7 is too small, a part of the light transmitted from the light transmitting body 5 does not travel to the wavelength conversion member 7 and is reflected or absorbed by a substance other than the wavelength conversion member 7. Incurs loss. Therefore, if the diameter of the wavelength conversion member 7 is in the above range, the amount of received light in the wavelength conversion member 7 can be prevented from being unevenly distributed depending on the site, so that the wavelength conversion amount is stable and high luminance with reduced color unevenness is achieved. Output light is obtained.

The semiconductor light emitting element 2 according to Example 1 has a width of 0.05 to 0.5 mm, a thickness of 0.03 to 0.5 mm, and an end surface area which is the light emitting surface 13 of 0.002 to 0.25 mm ^2. It was. The spread angle of the emitted light is 20 to 80 °, and the distance between the semiconductor light emitting element 2 and the wavelength conversion member 7 can be set to 0.2 to 5.0 mm, for example. On the other hand, the diameter in the cross section of the wavelength conversion member 7 is approximately 0.2 mm to ² mm and the cross sectional area is 0.03 to 3.2 mm ² in a direction substantially orthogonal to the light traveling direction. That is, the cross-sectional area of the wavelength conversion member 7 is smaller than 1570 times the end surface area of the semiconductor light emitting element 2. Specifically, a semiconductor light emitting element 2 as shown in Table 1 can be used, and by combining a wavelength conversion member 7 as shown in Table 2, a light emitting device that satisfies the above conditions can be obtained.

Moreover, the wavelength conversion member 7 in FIG. 2 contains a wavelength conversion member that can convert the wavelength from the light source. In Example 1, a phosphor was used as the wavelength conversion member. Thereby, the emitted light having a desired wavelength can be realized. As the wavelength conversion member 7, a phosphor directly attached, or an organic material such as silicone resin or epoxy resin, or at least glass, SiO ₂ , AlN, ZrO ₂ , SiN, Al ₂ O ₃ , or GaN An example is a material in which a phosphor is solidified using an inorganic material containing one kind as a binder.

  For example, white light can be obtained as follows by using the wavelength conversion member 7 containing a phosphor. The first method excites a yellow-emitting phosphor with blue light emitted from the semiconductor laser element 2a in the short wavelength side region of visible light. As a result, the yellow light partially converted in wavelength and the blue light that is not converted are mixed, and are emitted as white light by two colors having a complementary color relationship. In the second method, R, G, B phosphors are excited by light in the short wavelength region from ultraviolet to visible light emitted from the semiconductor laser element 2a. The wavelength-converted three-color light is mixed and emitted as white light.

Representative phosphors capable of realizing the above functions include cadmium zinc sulfide attached with copper and YAG phosphors and LAG phosphors attached with cerium. In particular, at the time of high luminance and long-term use _{(Re 1-x Sm x)} 3 (Al 1-y Ga y) 5 O 12: Ce (0 ≦ x <1,0 ≦ y ≦ 1, where, Re Is at least one element selected from the group consisting of Y, Gd, La, and Lu. The YAG, LAG, BAM, BAM: Mn, CCA, SCA, SCESN, SESN, CESN, CASBN and CaAlSiN _3: phosphor containing at least one selected from the group consisting of Eu can be used. By combining the excitation light from the light source and the fluorescent material with good wavelength conversion efficiency in this excitation light, it is possible to obtain a light emitting device with high light emission output, and obtain light of various colors, and color rendering High output light can be obtained.

  By the way, it is preferable that the arrangement density of the wavelength conversion substance in the wavelength conversion member 7 is uniform. However, the distribution region of the wavelength converting substance can be partially unevenly distributed. For example, the wavelength conversion material can be unevenly distributed so that the wavelength conversion material is small on the side facing the light emission surface 13 of the semiconductor laser element 2a and the wavelength conversion material is contained on the light emission surface side of the wavelength conversion member 7. By separating the semiconductor laser element 2a, which is a light source, from the wavelength conversion material, it is difficult to transfer heat generated by the light source and high-density light energy to the wavelength conversion material, and deterioration of the wavelength conversion material can be suppressed.

In the semiconductor laser device 1 according to the first embodiment, the wavelength conversion substance may be a mixture of two or more kinds of phosphors. That, Al, Ga, Y, La , the content of Lu and Gd and Sm are two or more kinds of _{(Re 1-x Sm x)} 3 (Al 1-y Ga y) 5 O 12: mixed Ce phosphor Thus, RGB wavelength components can be increased. Further, it is possible to increase the reddish component by using a nitride phosphor having yellow to red light emission such as CaAlSiBN to realize illumination with high average color rendering index Ra, light bulb color LED, and the like. Specifically, by adjusting the amount of phosphors having different chromaticity points on the CIE chromaticity diagram according to the light emission wavelength of the light emitting device, the phosphors are connected with each other on the chromaticity diagram. Any point can be made to emit light.

  Two or more kinds of the above phosphors may be present in the light emitting layer composed of one layer, or one or two or more kinds may be present in the light emitting layer composed of two layers. In addition, the phosphor is preferably dispersed uniformly in each layer. Thereby, wavelength conversion can be performed uniformly regardless of the site of the wavelength conversion substance, and uniform color mixture light with no unevenness can be obtained.

(AR coat)
In the wavelength conversion member 7, an AR coating layer can be provided on the light receiving side (the lower side in FIG. 2) which is the surface facing the light source. The AR coating layer can be the same as the AR coating layer attached to the light transmitting body 5. Thereby, it can prevent that the emitted light from a light source turns into return light, and the life characteristic of the semiconductor laser element 2a improves. Furthermore, since light loss can be reduced, the light extraction efficiency of the entire apparatus can be increased.

(Diffusion agent, etc.)
In addition to the wavelength conversion material, the wavelength conversion member 7 can be added with an appropriate member such as a viscosity extender, a light diffusion material, a pigment, a fluorescent material, or the like depending on the intended use. Examples of the light diffusing substance include barium titanate, titanium oxide, aluminum oxide, silicon oxide, silicon dioxide, heavy calcium carbonate, light calcium carbonate, silver, and a mixture containing at least one of these. As a result, a light emitting device having good directivity can be obtained. Similarly, various colorants can be added as a filter material having a filter effect of cutting unnecessary wavelengths from extraneous light and light emitting elements.

  By using a light diffusing material and a wavelength converting material such as a phosphor together, light from the semiconductor laser element 2a and the phosphor is diffusely reflected, and color unevenness that is likely to occur by using a phosphor with a large particle size is suppressed. Can be used preferably. In addition, the half width of the emission spectrum can be narrowed, and a light emitting device with high color purity can be obtained. On the other hand, a light diffusing material having a wavelength of 1 nm or more and less than 1 μm has a low interference effect on the light wavelength from the semiconductor laser element 2a, but has high transparency and can increase the resin viscosity without reducing the light intensity.

(Outer cap)
The outer cap 6 shown in FIG. 2 is configured to be separated from the sealing cap 4 on the outer surface side of the sealing cap 4, and is joined to the stem 3a at the bottom surface region of the outer cap 6 by, for example, resistance welding. . Further, a cylindrical second through hole 11 penetrating inward and outward in the thickness direction of the outer cap 6 is formed in a region of the outer cap 6 that receives transmitted light via the light transmitting body 5. The wavelength conversion member 7 is attached to the second through-hole 11 with an adhesive such as silicone resin, ceramic, low-melting glass, and closes the second through-hole 11. The outer cap 6 is not particularly limited as long as it has excellent adhesion to the wavelength conversion member 7 and can efficiently release the heat conducted from a heat source such as the wavelength conversion member 7 to the outside. Moreover, it is preferable to use a member having the same thermal expansion coefficient as that of the wavelength conversion member 7, and more specifically, a member containing Kovar is preferable. In this way, it is possible to prevent the occurrence of defects in the wavelength conversion member 7 and the outer cap 6 based on the difference in thermal expansion coefficient between the wavelength conversion member 7 and the outer cap 6, thereby improving the yield. Can be made. In addition, when arrange | positioning the wavelength conversion member 7 and the outer side cap 6 with resin, it is preferable to use the member of the same material as the said resin for the outer side cap 6 for the same reason as the above.

  Specifically, the material of the outer cap 6 is the same material as the sealing cap 4 described above. In Example 1, SUS was used. This increases the corrosion resistance. Further, the outer cap 6 shown in FIG. 2 can fix and support the wavelength conversion member 7 in the above-described position, and can guide light toward the light emission side 18 side (upward direction in FIG. 2) of the wavelength conversion member 7. It is desirable to have an inner wall formed in the second through hole 11. This is because color unevenness is reduced and light extraction efficiency can be improved. For example, the second through hole 11 of the outer cap 6 shown in FIG. 2 is formed in a cylindrical shape similar to the sealing cap 4, but the second through hole 11 has various shapes corresponding to the wavelength conversion member 7. The specific shape will be described separately as an application example of the first embodiment.

(Airtightness and heat dissipation)
According to the semiconductor laser device 1 having the above structure, the airtight state in the sealing region 12 can be further stabilized by adopting a double structure in which the outer cap 6 is provided on the outer surface side of the sealing cap 4. . The emitted light from the semiconductor laser element 2a mounted in the sealing region 12 passes through the light transmitting body 5 and further travels to the wavelength conversion member 7, whereby at least a part of the transmitted light is wavelength-converted. Is done. As a result, it is possible to emit mixed color light of the light emitted from the light source and the wavelength-converted light to the outside of the apparatus. In other words, it is possible to improve the life characteristics of the semiconductor laser element 2a and to obtain a light emitting device capable of emitting a desired wavelength. Furthermore, in the light transmitting body 5 and the wavelength conversion member 7, the wavelength per unit area of the phosphor to be irradiated is set to a diameter sufficient to transmit almost all of the emitted light from the highly directional semiconductor laser element 2a. The amount of conversion can be increased, so that high-luminance light can be emitted outside the apparatus.

  Further, in the semiconductor laser device 1 according to the first embodiment, as shown in FIG. 2, both the cap 4 for sealing and the outer cap 6 are connected with a common stem 3 a as a base, 6 are spaced apart. As the cap has a double structure in this manner, heat generated from a plurality of heat sources in the apparatus can be dissipated through another path. Specifically, the heat generated from the semiconductor laser element 2a generated with the use of the apparatus is conducted to the connected stem column 9, the stem 3a, or the nearby sealing cap 4, and the outside of the apparatus. The heat is dissipated. Thereby, the heat storage to the semiconductor laser element 2a can be suppressed, and the characteristic and life life of the element can be improved. On the other hand, the heat generated from the phosphor generated by using the apparatus is conducted in the order of the outer cap 6 that supports the wavelength conversion member 7 and the stem 3a. Thereby, the heat storage in the wavelength conversion member 7 is suppressed, and the characteristic of the phosphor can be prevented from being reduced. In general, the fluorescence intensity decreases as the temperature of the medium increases. This is because as the temperature rises, intermolecular collision increases and potential energy loss is caused by non-radiative transition deactivation. Furthermore, when the temperature of the solution rises, there may be a slight shift in the wavelength of the fluorescence spectrum. Therefore, the heat dissipation element and phosphor heat dissipation paths are divided into two paths, and the heat transfer paths are separately provided in the vicinity of the heat source, so that the heat dissipation effect can be further improved, and the life characteristics of the entire apparatus can be improved. To rise.

  In addition, since both heat sources are actually connected via the stem 3a, there is a possibility that heat is generated between them. However, if the conduction path has a branched structure, each heat source has a dedicated heat radiation path, so that the heat radiation effect is increased. In addition, since the sealing cap 4 of the first layer is mainly intended for hermetic sealing, it is only necessary to preferentially select a material in consideration of adhesion between the light transmitting body 5 and the stem 3a, and the heat dissipation effect is It can be covered by the outer cap 6 of the second layer via the stem 3a. Therefore, by adopting the two-layer structure, not only the airtight effect but also the heat dissipation effect is enhanced. In addition, as a method for fixing each of the outer cap 6 and the stem 3a to the stem 3a, YAG welding on the surfaces in contact with each other can be cited, in addition to using an adhesive or resistance welding. Thereby, both can be fixed easily.

(light source)
In the semiconductor laser device 1 of Example 1, a blue semiconductor laser element 2a is used as a semiconductor light emitting element as a light source. In this semiconductor laser element 2a, an active layer is formed between an n-type semiconductor layer and a p-type semiconductor layer, and this active layer has a multiple quantum well structure or a single quantum well structure. It is preferably formed from a -V group nitride semiconductor. Thereby, it is possible to obtain a laser beam having high directivity and easy to guide light in one direction. That is, it becomes possible to extract light out of the apparatus with high efficiency.

The semiconductor light emitting device itself may be any semiconductor light emitting device manufactured by a method and structure known in the art, and is usually configured by laminating a semiconductor layer on a substrate. As a specific example of the semiconductor laser element composed of the III-V nitride semiconductor, a nitride composed of non-doped Al _x Ga _1-x N (0 ≦ x ≦ 1) as a base layer on a substrate of sapphire, SiC, GaN or the like. A semiconductor is grown, and an n-type contact layer made of Si-doped Al _x Ga _1-x N (0 <x <1) (optional), Si-doped In _x Ga _1-x N (0 ≦ x ≦ 1) ), An n-type cladding layer having a superlattice structure composed of non-doped Al _x Ga _1-x N (0 ≦ x ≦ 1) and Si-doped GaN, and an n-type guide layer composed of GaN Active with a multiple quantum well structure having a well layer non-doped In _x Ga _1-x N (0 <x <1) and a barrier layer Si-doped or non-doped In _x Ga _1-x N (0 <x <1) layer, Mg-doped _{Al x Ga 1-x N (} 0 <x <1) Et consisting cap layer, the p-type guide layer made of undoped GaN, undoped _{Al x Ga 1-x N (} 0 ≦ x ≦ 1) and the p-type cladding layer is a super lattice structure consisting of a Mg-doped GaN, Mg-doped GaN The p-type contact layer is laminated. Further, this semiconductor laser element can have a high reflectance by having a light reflecting film made of an oxide film on the reflecting surface of the end face of the optical waveguide. In addition, a metal oxide film can be used.

  In addition, a light emitting diode can be used as the semiconductor light emitting element 2 of the light source. In this case, an end surface light emitting type is preferable. An edge-emitting diode is a type of light-emitting diode that is classified from the structural surface, and refers to a device that extracts light from the end surface of an active layer in the same manner as a semiconductor laser. This makes it possible to output light from the end face by raising the refractive index of the active layer to cause an optical waveguide action. By narrowing the output area in this way, the directivity of light can be increased and the amount of light received per unit area of the wavelength conversion member 7 can be increased. That is, the amount of light per unit area that is converted by the wavelength conversion member 7 increases, so that it is possible to obtain high-luminance output light from the apparatus as a whole.

(Production method)
An example of a method for manufacturing the semiconductor light emitting device 1 according to Example 1 will be described below with reference to FIG. The semiconductor light emitting element 2 manufactured by the above method is fixed to one side surface of the stem column body 9 placed in the central region of the upper surface of the stem 3a through an adhesive such as Au—Sn. A lead 8 that can be electrically connected to an external electrode is coupled to the lower surface side of the stem 3a. The semiconductor laser element 2a is electrically connected to the lead 8 through a conductive member such as a wire, so that power can be supplied from the external electrode to the semiconductor laser element 2a.

  Further, a first through hole 10 penetrating in the thickness direction is formed on the upper surface of the cylindrical sealing cap 4, and the light transmitting body 5 is bonded with an adhesive so as to close the second through hole 11. Is installed. The sealing cap 4 is welded to the stem 3a by resistance welding so as to include the semiconductor laser element 2a. At this time, the sealing cap 4 is configured such that the optical axis of the emitted light from the semiconductor laser element 2 a and the central axis of the light transmitting body 5 substantially coincide. The internal space formed by the stem 3a and the sealing cap 4 is maintained in an airtight state, that is, the semiconductor laser element 2a is hermetically sealed by both.

  On the other hand, the phosphor produced by the above-described method is solidified via a solidifiable binder such as an inorganic material and formed on the wavelength conversion member 7. Furthermore, the substantially cylindrical outer cap 6 having a diameter larger than the diameter of the sealing cap 4 is formed with a second through hole 11 penetrating in the thickness direction on the upper surface thereof. When the wavelength conversion member 7 is attached to the second through hole 11 with an adhesive, the second through hole 11 is closed. The outer cap 6 is configured to include the sealing cap 4 on the outer side of the sealing cap 4, and is connected by resistance welding in a contact area with the stem 3 a. At this time, the optical axis of the emitted light and the central axis of the wavelength conversion member 7 are positioned so as to substantially coincide.

(Application examples)
(Wavelength conversion member)
Further, it is desirable that the wavelength conversion member 7 has a shape that can guide light in the direction 18 of the light emission side of the wavelength conversion member 7 (upward in FIG. 2). This specific shape is shown in FIG. 6A to 6D are schematic cross-sectional views of the wavelength conversion member 7. The shape of the wavelength conversion member 7a in FIG. 6A is a disc shape and can be easily formed as compared with other shapes, so that the yield can be improved. Moreover, the shape of the wavelength conversion member 7b shown in FIG. 6B is a dome shape that protrudes toward the light emission side. Thereby, total reflection can be made difficult to occur on the light emission side, and the light extraction efficiency can be improved. Furthermore, the wavelength conversion member 7c in FIG. 6C is spherical. In this manner, not only total reflection on the light exit side 18 but also total reflection on the light incident side 19 in the wavelength conversion member 7c can be made difficult to occur. In addition, the wavelength conversion member 7d shown in FIG. 6 (d) has a lens shape, and total reflection can be suppressed on both the light exit side 18 and the incident side 19 of the wavelength conversion member 7d, and the reflected / refracted light is a semiconductor. It can suppress that it becomes the return light to the light emitting element 2 side. In addition, in the wavelength conversion member, considering the refractive index difference at the interface between the wavelength conversion member and air, the wavefront control such as light collection and diffusion can be performed by appropriately selecting and processing the shape on the light exit side 18 side. It becomes possible.

(Reflective film)
6A to 6D are schematic cross-sectional views of the wavelength conversion members 7a 'to 7d' illustrated in FIGS. 6A to 6D. In the wavelength conversion members 7a to 7d of FIGS. The reflection film 22 is formed on the surface of the incident side 19 of the light source. By having the reflective film 22, it is possible to further suppress the light that has traveled to the wavelength conversion member from returning to the semiconductor light emitting element 2 side, that is, the light extraction efficiency can be further improved. This leads to an increase in output.

(Outer cap)
FIGS. 7A to 7G are schematic cross-sectional views of a semiconductor laser device including second through holes 11e to 11k having various shapes in the outer caps 6e to 6k. However, illustration of the wavelength conversion member attached to the second through holes 11e to 11k is omitted. First, the second through hole 11e in the outer cap 6e in FIG. 7A is continuous from the inner wall of the hole formed in the through hole coupling portion 11-1 adjacent to the light transmitting body 5, and the through hole coupling portion 11-. It has an inner wall that forms a cylindrical hole 11-2 having an inner diameter larger than that of the first hole. In this way, since the shape of the through-hole connecting portion 11-1 and the hole 11-2 are both cylindrical, the outer cap 6e can be easily processed, and the yield can be improved. Moreover, the magnitude | size of the diameter which the inner wall of the through-hole connection part 11-1 comprises shall have at least the magnitude | size of the diameter of the light-transmitting body 5, Preferably it is made substantially the same. As a result, the light emitted from the semiconductor light emitting element 2 having directivity can be efficiently guided to the emission side 18 while reducing light loss when traveling into the second through hole 11e. Efficiency can be improved.

  Moreover, FIG.7 (b) is a figure which shows the other example of the shape of a 2nd through-hole, Here, the 2nd through-hole 11f in the outer side cap 6f was formed in the through-hole connection part 11-1. It has an inner wall that forms a truncated cone-shaped hole 11-3 that is continuous from the inner wall of the hole and is convex toward the through-hole connecting portion 11-1. If it does in this way, as shown in Drawing 7 (b), the cross-sectional shape of the side of hole 11-3 will spread toward the other side of penetration hole connection part 11-1 from penetration hole connection part 11-1. Therefore, the light emitted from the wavelength conversion member 7 and hitting the side surface of the hole 11-3 can be easily directed to the opposite side of the through-hole connecting portion 11-1, and the light extraction efficiency can be improved.

  Moreover, FIG.7 (c) is a figure which shows the other example of the shape of a 2nd through-hole, Here, the 2nd through-hole 11g in the outer side cap 6g was formed in the through-hole connection part 11-1. Continuing from the inner wall of the hole and forming the cylindrical hole 11-4 having an inner diameter larger than the hole of the through-hole connecting portion 11-1, and the inner wall of the cylindrical hole 11-4, the through-hole connection And an inner wall forming a truncated cone-shaped hole 11-5 that protrudes toward the portion 11-1. In this way, as in the case shown in FIG. 7B, the cross-sectional shape of the side surface of the hole 11-5 is directed from the through-hole connecting portion 11-1 to the opposite side of the through-hole connecting portion 11-1. Therefore, the light extraction efficiency can be improved. Moreover, since the wavelength conversion member 7 can arrange | position the cylindrical hole more stably than the frustum-shaped hole, the cylindrical hole 11-4 whose diameter is larger than the through-hole connection part 11-1. In the case where it is provided, it is possible to suppress a decrease in yield due to the wavelength conversion member 7 being placed unstable.

  Moreover, FIG.7 (d) is a figure which shows the other example of the shape of a 2nd through-hole, Here, the 2nd through-hole 11h in the outer side cap 6h was formed in the through-hole connection part 11-1. Continuous from the inner wall of the hole and continuous from the inner wall forming the first frustoconical hole 11-6 that protrudes toward the through-hole coupling portion 11-1, and from the first frustoconical hole 11-6. And it continues from the inner wall which forms the cylindrical hole 11-7 whose internal diameter is larger than the hole of the through-hole connection part 11-1, and the inner wall of the cylindrical hole 11-7, and is connected to the through-hole connection part 11-1. And an inner wall forming a second frustoconical hole 11-8 that is convex toward the top. If it is the 2nd through-hole 11h which has such a shape, the light progresses by reflecting and refracting the light which once progressed in the 2nd through-hole 11h with the side surface of the truncated cone-shaped hole 11-6. Since the direction can be guided to the emission side 18 (upward in FIG. 7D), it is possible to prevent the light from returning to the light transmitting body 5 side again. That is, the light extraction efficiency can be improved.

  Moreover, FIG.7 (e) is a figure which shows the other example of the shape of a 2nd through-hole, Here, the 2nd through-hole 11i in the outer side cap 6i was formed in the through-hole connection part 11-1. It has an inner wall that is continuous from the inner wall of the hole and forms a dome-shaped hole 11-9 that is convex toward the through-hole connecting portion 11-1. In this way, the portion on the side of the through-hole connecting portion 11-1 on the side surface of the dome-shaped hole 11-9 is a curved surface, so that the through-hole connection of the hole is compared with the case where the hole has a truncated cone shape. It becomes possible to direct more of the light reflected by the side surface close to the portion 11-1 to the emission side 18. In addition, the part on the opposite side to the through-hole connection part 11-1 in the dome-shaped hole 11-9 is a shape in which the cross section is a tapered shape (a truncated cone shape that is convex toward the through-hole connection part 11-1 side). However, it is also possible to adopt a form in which the convex tip portion is spherical. In this case, the light is reflected on the side opposite to the through-hole coupling portion 11-1 on both the side surface near the through-hole coupling portion 11-1 and the side surface far from the through-hole coupling portion 11-1 in the dome-shaped hole 11-9. Easy to do.

  Moreover, FIG.7 (f) is a figure which shows the other example of the shape of a 2nd through-hole, Here, the 2nd through-hole 11j in the outer side cap 6j was formed in the through-hole connection part 11-1. Continuing from the inner wall of the hole, the inner wall forming the cylindrical hole 11-10 having a larger inner diameter than the hole of the through-hole connecting portion 11-1, and the inner wall of the cylindrical hole 11-10 are connected to the through-hole. And an inner wall that forms a dome-shaped hole 11-11 that protrudes toward the portion 11-1. Thereby, more of the light reflected by the inner wall of the second through hole can be guided to the emission side 18, and the wavelength conversion member 7 can be stably disposed in the cylindrical hole 11-10.

  Moreover, FIG.7 (g) is a figure which shows the other example of the shape of a 2nd through-hole, Here, the 2nd through-hole 11k in the outer side cap 6k was formed in the through-hole connection part 11-1. From the inner wall that forms the first cylindrical hole 11-12 that is continuous from the inner wall of the hole and has a larger inner diameter than the hole of the through-hole connecting portion 11-1, and the inner wall of the first cylindrical hole 11-12 An inner wall that forms a second cylindrical hole 11-13 that is continuous and has a larger inner diameter than the first cylindrical hole. If it does in this way, the wavelength conversion member 7 can be stably arrange | positioned in the 1st cylindrical hole 11-12.

(Method of joining wavelength conversion member and outer cap)
Furthermore, the wavelength conversion members 7a to 7d and 7a 'to 7d' shown in FIG. 6 can be mounted in any combination in the second through holes 11e to 11k in the outer caps 6e to 6k shown in FIG. As an example, a mounting method when the wavelength conversion member 7a of FIG. 6A is mounted in the outer cap 6e shown in FIG. 7A will be described with reference to FIG. When attaching the wavelength converting member 7a to the second through hole 11e in the outer cap 6e of FIG. 8A, first, the low melting point glass (or resin) 23 is inserted into the second through hole 11e. Subsequently, the wavelength conversion member 7a can be fixed to the outer cap 6e by mounting the wavelength conversion member 7a in the second through hole 11e so as to be in close contact with the low melting point glass (or resin) 23.

  Further, the low melting point glass (or resin) 23 is positioned at least outside the periphery of the light transmitting body 5 in a plan view from the upper surface, that is, the low melting point glass (or resin) 23 overlaps with the light transmitting body 5. It is formed into a shape that does not become. Thereby, it can control that light injects into the interface of wavelength conversion member 7a and low melting glass (or resin), and light is refracted in an undesired direction. Specifically, in the outer cap 6e of FIG. 8A, a low melting point glass (in the inner diameter difference region between the through-hole connecting portion 11-1 and the hole 11-2, which is the bottom surface of the cylindrical hole 11-2. (Or resin) 23 is inserted. However, in order to arrange the wavelength conversion member 7a in the second through-hole 11e while maintaining the low melting point glass (or resin) 23 in a desired shape in this way, considerable accuracy is required.

  Therefore, as shown in FIG. 8B, the wavelength conversion member 7a can be fixed by providing a low-melting glass (or resin) 23 on the light emission side 18 of the wavelength conversion member 7a. In this way, after the wavelength conversion member 7a is inserted into the outer cap 6e, the low melting point glass (or resin) 23 can be inserted into the outer cap 6e to have a desired shape and fixed to the outer cap 6e. It is easy to process the glass (or resin) 23 into a desired shape. In this case, the accuracy required for processing the low-melting glass (or resin) 23 can be satisfied relatively easily, so that the yield can be improved. For example, in FIG. 8B, the low melting point glass (or resin) 23 is provided in the peripheral region of the light emitting side 18 on the surface of the wavelength conversion member 7a. That is, the amount of the low melting point glass (or resin) 23 in the central portion of the diameter of the wavelength conversion member 7a can be reduced, and the light extraction efficiency can be improved. As a method of installing the low-melting glass (or resin) 23 in the peripheral region of the wavelength conversion member 7a, a disk-shaped low-melting glass (or resin) 23 is attached to the surface of the light emitting side 18 of the wavelength conversion member 7a. Add more heat. Thereby, the low melting point glass (or resin) 23 is attracted to the peripheral edge of the wavelength conversion member 7a by surface tension, and the inner wall of the second through hole 11e in the outer cap 6e and the wavelength conversion member 7a are easily fixed. Can do.

  Further, in the semiconductor laser device of FIG. 8C, the low melting point glass (or resin) 23 provided on the light emitting side 18 of the wavelength conversion member 7a is formed in a dome shape having a central protrusion on the outside. Yes. In this way, the light emitted from the semiconductor light emitting element 2 can be prevented from being totally reflected on the light emitting side 18 surface of the low melting point glass (or resin) 23, so that the light extraction efficiency can be increased. it can.

  Further, in the semiconductor laser device of FIG. 8D, the wavelength conversion member 7 a is fixed to the outer cap 6 e by the fusion 25. In this way, the wavelength conversion member 7a and the outer cap 6e can be fixed more easily and with higher accuracy than when the low-melting glass (or resin) 23 is used, so that the yield can be improved. it can. Further, when the wavelength conversion member 7a is fixed to the outer cap 6e by the fusion 25, a part or all of the wavelength conversion member 7a is not covered with the low melting point glass (or resin) 23, so that the semiconductor light emitting device The light emitted from 2 is not blocked by the low melting point glass (or resin) 23, and the light extraction efficiency can be improved.

  Further, in the semiconductor laser device of FIG. 8E, the fusion of the wavelength conversion member 7a is the high temperature fusion 25 ′. When the wavelength conversion member 7a is fixed to the outer cap 6e by the high temperature fusion 25 ', the wavelength conversion member 7a expands. As a result, for example, the disk-shaped wavelength conversion member 7a has a lens shape. In this way, in the wavelength conversion member 7a, not only the total reflection at the light emitting side 18 portion but also the total light reflection at the light incident side 19 on the semiconductor light emitting element 2 side can be made difficult to occur. .

  Further, in the semiconductor laser device of FIG. 8F, the wavelength conversion member 7a is fixed to the outer cap 6e by the fusion 25, and is projected outward on the light emission side 18 of the wavelength conversion member 7a. A low-melting glass (or resin) 23 having a dome shape is provided. In this way, the wavelength conversion member 7a can be easily fixed to the outer cap 6e, and at the same time, the wavelength conversion member 7a is not made into a lens shape, and all of the wavelength conversion member 7a on the light emission side 18 side is formed. The reflection can be reduced, and the temperature control in the high-temperature fusion 25 ′ required for forming a lens shape can be eliminated.

  As an example of the semiconductor light emitting device, a semiconductor laser device according to Example 2 is shown in FIGS. The semiconductor laser device 1b of FIG. 9 has the same configuration except that the sealing cap 4 and the outer cap 6 in the semiconductor laser device 1 shown in FIGS. Therefore, the same number is attached to the same member, and the description is omitted as appropriate. 9 is a perspective view in which a part of the semiconductor laser device 1b is cut, and FIG. 10 is a schematic cross-sectional view taken along the line V-V 'of FIG. In the semiconductor laser device 1b according to the second embodiment, as in the first embodiment, the internal space formed by the sealing cap 4b and the stem 3a is in a secret sealing state due to the joining of both. However, as shown in FIGS. 9 and 10, the sealing cap 4b is formed at a right angle to the outside of the substantially cylindrical body in the joining area with the stem 3a, that is, in the bottom area of the sealing cap 4b. It has an extended heel region 14. As a result, the contact area with the stem 3a is increased, and the bondability between the two is further increased. Furthermore, since the surface area of the sealing cap 4b is increased, the effect of the heat sink is further increased. That is, the airtightness of the sealing region 12 and the effect of heat dissipation, which are the main functions of the sealing cap 4b, can be further enhanced. The amount of protrusion in the bottom area of the sealing cap 4b, that is, the diameter of the flange area 14, is not particularly limited, but in the semiconductor laser device 1b in FIGS. 9 and 5, the amount smaller than the diameter of the outer cap 6b covered on the outer surface side. In other words, it is set so as not to contact the outer cap 6b. As a result, the heat dissipation path that conducts the heat sources of both the semiconductor laser element and the phosphor can be configured separately, and the heat dissipation effect is enhanced.

  Further, the outer cap 6b also has a flange region 14b that is bent at a substantially right angle outward from the substantially cylindrical body portion in a bottom surface region that is a joint region with the stem 3a. Thereby, the heat radiation from the phosphor and the semiconductor laser element can be enhanced. The diameter of the flange region 14b in the outer cap 6b is not particularly limited. However, if the protrusion amount is increased, the contact area with the stem 3a is increased, so that the coupling between the two is stabilized. Moreover, since the surface area of the outer cap 6b is also increased, heat dissipation is enhanced. For example, as shown in FIG. 11, it is possible to extend the flange region 14b so that the end surface of the flange region 14b of the outer cap 6b is flush with the end surface of the stem 3a, thereby improving the heat dissipation.

(Ag plating)
Moreover, as shown in FIG. 12, the reflective layer 15 can be provided in the outer surface side of the cap 4b for sealing. The reflection layer 15 is provided at least on the surface that can transmit the emitted light from the semiconductor laser element 2a, that is, on the outer surface side of the upper substantially annular surface 16 in the drawing. However, the reflective layer 15 can also be provided on all of the outer surface side of the sealing cap 4b and the inner surface side of the outer cap 6b. Thereby, the emitted light from the light source travels to the wavelength conversion member 7 through the light transmitting body 5, is reflected by the phosphor contained in the wavelength conversion member 7, and the light is directed to the sealing cap 4b side. Even when the light is guided, there is an effect that the traveling direction can be corrected again to the wavelength conversion member 7 side by the reflection layer 15. That is, the optical loss in the apparatus can be reduced. In Example 2, an Ag plating layer was formed as the reflective layer 15. Ag suitably reflects light having a wavelength of 300 nm or more, particularly 365 nm or more. For example, in the second embodiment, light having a wavelength of 470 to 800 nm that has been wavelength-converted by the YAG phosphor can be selectively reflected, so that it can be suitably used in a semiconductor laser device having an almost phosphor.

  A semiconductor laser device 1c is shown in FIG. 13 as an example of the semiconductor light emitting device according to the third embodiment. Compared with the semiconductor laser devices 1 and 1b according to the first and second embodiments, the cross-sectional schematic diagram of the semiconductor laser device 1c shown in FIG. 13 shows the shapes and functions of the sealing caps 4 and 4b and the outer caps 6 and 6b. Therefore, the same members are denoted by the same reference numerals, and the description thereof is omitted as appropriate. The sealing cap 4c in the semiconductor laser device 1c of FIG. 13 has the same shape as that of the sealing cap 4b of the semiconductor laser device 1b according to the second embodiment. A wrinkle region 14c is provided. Further, the outer cap 6c has a cylindrical shape, and its inner surface is connected to the outer surface of the sealing cap 4c. That is, the outer cap 6c is configured to be in contact with and cover the sealing cap 4c. However, as in the first and second embodiments, the light transmitting body 5 and the wavelength conversion member 7 are spaced apart.

  Further, as shown in FIG. 13, the outer cap 6c covers only the upper surface region from a predetermined height of the sealing cap 4c, and the sealing cap 4c is exposed in the uncovered region of the outer cap 6c. Yes. In other words, the bottom region of the outer cap 6c is not connected to the stem 3a and is spaced apart, and the flange region 14c of the sealing cap 4c is located in this separated region. That is, in the semiconductor laser device 1c according to the third embodiment, the sealing cap 4c and the outer cap 6c have contact areas on the surfaces, and in addition, at least a part of the sealing cap 4c is an exposed area on the outer surface side. 17 is different from the first and second embodiments.

  In order to realize the above structure, the connection between the stem 3a and the sealing cap 4c is performed by resistance welding. Further, the sealing cap 4 and the outer cap 6c are connected by YAG laser welding. However, in the welding region of both caps, when the Ag reflective layer 15 is provided as shown in FIG. 12, the laser beam is reflected by Ag, and the connection degree between the caps may be reduced. In order to prevent this, it is preferable to cover the joint surface of both caps with a material that can be absorbed by the YAG laser. Alternatively, a laser such as an excimer laser capable of absorbing Ag can be used.

  With the above structure, when the heat generated from the semiconductor laser element 2a, which is a light source, is conducted to the sealing cap 4c, the heat radiation effect is enhanced because the heat can be directly radiated to the outside air in the exposed region 17. Further, heat generated from the phosphor as a heat source is conducted to the outer cap 6c and radiated. In the semiconductor laser device 1c according to FIG. 13, since the sealing cap 4c and the outer cap 6c have a contact area on the surface, heat from both heat sources can travel between the caps 4c and 6c. Since the caps adjacent to each are exposed to the outside, the heat dissipation effect can be enhanced.

  Furthermore, the exposed region 17 to the outside can be increased by extending the flange region 14c of the sealing cap 4c. For example, in the semiconductor laser device 1d shown in FIG. 14, the outer end surface of the flange region 14c is flush with the outer end surface of the stem 3a, thereby increasing the exposed area of the sealing cap 4 to the outside. Thereby, a further heat dissipation effect can be achieved.

  FIG. 15 is a schematic cross-sectional view of a semiconductor laser device 1e as an example of the semiconductor light emitting device according to the fourth embodiment. In the semiconductor laser device 1e of FIG. 15, the sealing cap 4c and the outer cap 6d have the flange regions 14d and 14e as in the second embodiment. The outer cap 6d is placed on the flange region 14d of the sealing cap 4, and both the flange regions 14d and 14e are in surface contact. However, the diameter of the flange region 14d of the sealing cap 4c is larger than the diameter of the flange region 14e of the outer cap 6d. For example, in the semiconductor laser device 1e shown in FIG. 15, the periphery of the flange region 14d of the sealing cap 4c is flush with the periphery of the stem 3a and is located outside the periphery of the flange region 14e of the outer cap 6d. . That is, at least part of the flange region 14d of the sealing cap 4c is exposed to the outer surface. In addition, both caps 4c and 6d are connected by resistance welding only at the flange regions 14d and 14e, and are separated from each other in the body portion and the upper surface of both ring-shaped caps. In addition, the outer cap 6d and the sealing cap 4c are also connected by resistance welding.

  In the semiconductor laser device 1e having the above structure, in addition to the effect of increasing the airtightness of the sealing region 12 and the adhesion to the stem 3a by increasing the diameter of the flange region 14c of the sealing cap 4c. Since a part of the sealing cap 4c is exposed to the outside, a high heat dissipation effect can be obtained. Thus, in order to obtain the high heat dissipation effect of the sealing cap, if the bottom portion of the sealing cap is exposed to the outside, in Example 3, the bottom portion of the outer cap 6c is not bonded to the stem 3a. It was made the structure which floated to the upper part by attaching with the curved surface of the cap 4c for sealing. The caps are connected by YAG laser welding. On the other hand, if it is the semiconductor laser apparatus 1e of Example 4, both the caps 4c and 6d can be connected by resistance welding, and since a welding method is unified, a manufacturing process can be simplified. Further, in the connection between the sealing cap 4c and the stem 3a, the outer cap 6d is pressure-bonded downward from the upper surface of the sealing cap 4c, whereby the sealing cap 4c and the stem 3a are connected. It becomes stronger and the adhesion is stable. That is, the hermetic sealing property of the sealing region 12 is further improved, and the life characteristics of the semiconductor laser element 2a are improved.

  The semiconductor light emitting device of the present invention can be suitably used for a vehicle headlight, a light source for a projector, and the like.

1 is a perspective view showing a semiconductor laser device according to Example 1. FIG. It is a cross-sectional schematic diagram in the II-II 'line | wire of FIG. 6 is a schematic cross-sectional view showing another semiconductor laser device according to Example 1. FIG. 6 is a schematic cross-sectional view showing another semiconductor laser device according to Example 1. FIG. 1 is a partially enlarged cross-sectional view of a semiconductor laser device according to Example 1. FIG. 3 is a schematic cross-sectional view of a wavelength conversion member according to an application example of Example 1. FIG. 1 is a schematic cross-sectional view of a semiconductor laser device according to an application example of Example 1. FIG. It is explanatory drawing which shows the adhesion method of the outer side cap and wavelength conversion member which concern on Example 1. FIG. FIG. 6 is a partial cross-sectional perspective view showing a semiconductor laser device according to a second embodiment. It is a cross-sectional schematic diagram in the V-V 'line | wire of FIG. 7 is a cross-sectional view of another semiconductor laser device according to Example 2. FIG. 7 is a cross-sectional view of another semiconductor laser device according to Example 2. FIG. 6 is a schematic cross-sectional view showing a semiconductor laser device in Example 3. FIG. FIG. 10 is a cross-sectional view showing another semiconductor laser device in Example 3. 6 is a schematic cross-sectional view showing a semiconductor laser device in Example 4. FIG. It is a top view which shows the conventional light source device for illumination.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1, 1b, 1c, 1d, 1e, 1f, 1g ... Semiconductor laser apparatus 2 ... Semiconductor light emitting element 2a ... Semiconductor laser element 3, 3b, 3d ... Support body 3a ... Stem 4, 4b, 4c, 4d ... Cap for sealing 5, 5a, 5b, 5c, 5d ... Light transmissive body 6, 6b, 6c, 6d, 6e, 6f, 6g, 6h, 6i, 6j, 6k ... Outer cap 7, 7a, 7b, 7c, 7d, 7a ', 7b ', 7c', 7d '... wavelength conversion member 8 ... lead 9 ... stem column 10 ... first through hole 11, 11e, 11f, 11g, 11h, 11i, 11j, 11k ... second through hole 11-1 ... Through-hole connecting portions 11-2, 11-3, 11-4, 11-5, 11-6, 11-7, 11-8, 11-9, 11-10, 11-11, 11-12, 11- 13 ... hole 12 ... sealing region 13 ... light emitting surface 14, 14b, 14 , 14d, 14e ... 鍔 region 15 ... reflective layer 16 ... annular surface of sealing cap 17 ... exposed region of sealing cap 18 ... light emitting side 19 ... light incident side 20, 20b ... AR coating layer 21 ... Glass layer 22 ... Reflective film 23 ... Low melting point glass (or resin)
25, 25 '... Fusion 100 ... Light source device for illumination 101 ... Semiconductor laser element 102 ... Heat sink 103 ... Diffuse lens 104 ... Phosphor 105 ... Vacuum glass tube

Claims (17)

A semiconductor light emitting device;
A support capable of fixing the semiconductor light emitting element;
A light transmissive body that transmits light emitted from the semiconductor light emitting element;
A sealing cap that is fixed to the support and supports the light transmitting body;
A wavelength conversion member disposed outside the sealing cap and capable of converting the wavelength of at least part of transmitted light transmitted from the light transmitting body; and an outer cap supporting the wavelength conversion member;
A semiconductor light emitting device comprising: A semiconductor light emitting device;
A support that is at least partially open and capable of fixing the semiconductor light emitting element;
A sealing cap that is fixed to the support so as to close the opening of the support;
A light transmissive body fixed to the support or the sealing cap and transmitting light emitted from the semiconductor light emitting element;
A wavelength conversion member that is outside the support or the sealing cap and that is fixed on the support and capable of wavelength-converting at least part of transmitted light transmitted from the light transmission body, and the wavelength conversion member An outer cap that supports
A semiconductor light emitting device comprising: The semiconductor light-emitting device according to claim 1 or 2,
The sealing cap or / and the outer cap are fixed in a thermally conductive state with the support,
The central axis of the light transmitting body is substantially the same as the optical axis of the light emitted from the semiconductor light emitting element,
The semiconductor light emitting device, wherein the wavelength conversion member is disposed on the central axis. The semiconductor light-emitting device according to claim 1,
The maximum value of the diameter of the wavelength conversion member is

(A is a direction substantially orthogonal to the light traveling direction, and is the maximum diameter in the cross section of the wavelength conversion member 7. L is the distance between the semiconductor light emitting element and the wavelength conversion member. R is the semiconductor. (The spread angle of light emitted from the light emitting element.)
A semiconductor light-emitting device characterized by being in the range. A semiconductor light-emitting device according to claim 1,
A semiconductor light emitting device, wherein at least a part of the sealing cap is exposed to the outside. A semiconductor light-emitting device according to claim 1,
A semiconductor light-emitting device, wherein an outer surface of the sealing cap and an inner surface of the outer cap have a contact region. The semiconductor light-emitting device according to claim 1,
The sealing cap and the outer cap have a substantially cylindrical shape opened inside,
The diameter of the substantially cylindrical side surface of the outer cap is larger than the diameter of the substantially cylindrical side surface of the sealing cap,
The outer surface of the substantially cylindrical side surface of the sealing cap is in contact with the inner surface of the substantially cylindrical side surface of the outer cap, and the outer cap is positioned away from the support,
The semiconductor light emitting device according to claim 1, wherein the sealing cap is exposed to the outside in a separation region between the outer cap and the support. The semiconductor light-emitting device according to claim 1,
In at least one of the sealing cap and the outer cap, a flange region that is substantially parallel to the support body and bent outward is formed at the end,
The semiconductor light emitting device, wherein the collar region and the support are fixed. The semiconductor light-emitting device according to claim 1,
The flange region in the sealing cap is connected to the support;
The outer cap is in contact with the outer surface side of the flange region of the sealing cap;
The flange region of the sealing cap is narrowly attached to the support and the outer cap, and at least a part of the flange region is exposed to the outside,
The semiconductor light emitting device according to claim 1, wherein a connecting region between the flange region of the sealing cap and the support is larger than a contact region between the flange region and the outer cap. A semiconductor light-emitting device according to claim 1,
A semiconductor light emitting device, wherein a diameter of the light transmitting body is smaller than a diameter of the wavelength conversion member. The semiconductor light-emitting device according to claim 1,
A semiconductor light emitting device characterized in that the light transmitting body has a lens shape. A semiconductor light-emitting device according to claim 1,
2. The semiconductor light emitting device according to claim 1, wherein the semiconductor light emitting element is a semiconductor laser element or an edge-emitting LED having an emission peak wavelength at 360 to 800 nm. A semiconductor light-emitting device according to claim 1,
The semiconductor light emitting device, wherein the wavelength conversion member contains a phosphor. A semiconductor light emitting device according to claim 1,
The phosphor includes at least one selected from the group consisting of LAG, BAM, BAM: Mn, YAG, CCA, SCA, SCESN, SESN, CESN, CASBN, and CaAlSiN ₃ : Eu. . The semiconductor light emitting device according to claim 1,
A semiconductor light emitting device comprising: a multilayer film capable of transmitting only a specific wavelength on at least a surface facing the semiconductor light emitting element in the light transmitting body or the wavelength conversion member. The semiconductor light emitting device according to claim 1,
A semiconductor light emitting device, wherein at least a surface on the light emitting surface side of the light transmitting body or the wavelength converting member is processed to have a height difference. The semiconductor light emitting device according to claim 1,
The light-transmitting material or the wavelength conversion member contains a filler.

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