JP2010199357A - Light emitting device and method for manufacturing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light emitting device and a method for manufacturing the light emitting device capable of efficiently taking, to the outside, light emitted from a semiconductor light emitting element and showing excellent light distribution characteristics. <P>SOLUTION: The light emitting device includes the semiconductor light emitting element, a pedestal for mounting the semiconductor light emitting element; a cap having a through hole through which light from the semiconductor light emitting element passes, and sealing the semiconductor light emitting element; and a wavelength conversion member supported into the through hole of the cap, containing a phosphor and transmitting light from the semiconductor light emitting element. A translucent member formed of resin or glass having curved surface shape projected in an emitting direction of light from the through hole of the cap while covering the wavelength conversion member is provided on the cap. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a light emitting device including a semiconductor light emitting element and a wavelength conversion member, and a method for manufacturing the same.

As a light emitting device using a semiconductor light emitting element, a structure using a member that converts the wavelength of light from a semiconductor light emitting element as a light source is known.
For example, a light-emitting device that includes a semiconductor laser element and a fluorescent material, the fluorescent material receives light from the semiconductor laser element, and can emit light having a longer wavelength than the light from the semiconductor laser element. It is disclosed (for example, see Patent Document 1). FIG. 9 is a cross-sectional view showing a conventional light emitting device. The semiconductor laser element 710 is fixed to a metal stem 720 and covered with a cap 730. A fluorescent material layer 740 is formed on the extraction window 735 on the upper surface of the cap 730. With this configuration, the emitted light from the semiconductor laser element 710 passes through the extraction window 735 of the cap 730 and is then wavelength-converted by the phosphor, so that the mixed color light can be emitted to the outside.

Japanese Patent Laid-Open No. 11-87778 (particularly FIG. 95)

In the light-emitting device of Patent Document 1, light reflection from the semiconductor laser element can occur at the interface due to a difference in refractive index at the interface between the fluorescent material layer 740 and the air, which tends to cause a decrease in light extraction efficiency. There's a problem. In addition, since the light from the semiconductor light emitting element 710 is scattered in all directions by the fluorescent material layer 740, the spread angle of the emitted light is increased, and it is difficult to realize desired directivity.
Accordingly, an object of the present invention is to provide a light-emitting device that can efficiently extract emitted light from a semiconductor light-emitting element to the outside and exhibit good light distribution characteristics, and a method for manufacturing the same.

  A light-emitting device according to the present invention includes a semiconductor light-emitting element, a pedestal on which the semiconductor light-emitting element is mounted, a through hole through which light from the semiconductor light-emitting element passes, and a cap that seals the semiconductor light-emitting element. A wavelength conversion member that is supported in the through-hole of the cap, contains a phosphor, and transmits light from the semiconductor light-emitting element, the wavelength conversion member on the cap And a translucent member made of resin or glass having a curved surface shape protruding in the light emission direction from the through hole of the cap. By having a translucent member made of resin or glass that covers the wavelength conversion member on the cap, the light emitted from the wavelength conversion member can be efficiently externally passed through the resin or glass disposed on the cap. Can be taken out. Since the translucent member has a curved surface shape protruding in the light emission direction from the through hole of the cap, it is possible to improve light extraction efficiency and emit light with high directivity. Moreover, since a translucent member is arrange | positioned on a wavelength conversion member and a cap, the adhesive strength of a translucent member can be improved.

  Moreover, it is preferable that the said translucent member is filled on the said wavelength conversion member in the through-hole of the said cap. Thereby, it is possible to improve the light extraction efficiency. Moreover, the adhesion strength of the translucent member can be improved.

  The translucent member preferably has a substantially hemispherical shape or a substantially hemispherical shape. As a result, it is possible to improve the light extraction efficiency and emit light with strong directivity.

  Moreover, it is preferable that the translucent member has a height on the central axis of the through hole of the cap that is smaller than the substantially hemispherical radius or the semi-elliptical spherical short radius of the translucent member. Thereby, light can be efficiently extracted onto the central axis of the through hole of the cap. When the translucent member has a predetermined thickness on the end portion of the wavelength conversion member, uneven color of light emission can be reduced.

  Moreover, it is preferable that the said wavelength conversion member is a substantially spherical shape or a substantially elliptical spherical shape. Thereby, wavelength conversion efficiency can be improved.

  Further, the radius of curvature of the translucent member is larger than the radius of curvature of the wavelength converting member, and the center of curvature of the translucent member is closer to the semiconductor light emitting element than the center of curvature of the wavelength converting member. It is arranged. Thereby, light can be efficiently extracted on the central axis of the through hole of the cap. In addition, uneven color of emitted light can be reduced.

  Moreover, it is preferable that the bottom surface of the translucent member coincides with the upper surface of the cap. Thereby, the contact | adhesion power of a translucent member improves. Moreover, it becomes easy to transmit the heat which arises in a translucent member to a cap, and can improve heat dissipation.

  The method for manufacturing a light emitting device according to the present invention includes a semiconductor light emitting element, a pedestal on which the semiconductor light emitting element is mounted, and a through-hole through which light from the semiconductor light emitting element passes, and the semiconductor light emitting element is sealed. A cap that is stopped, and a wavelength conversion member that is supported in a through-hole of the cap, contains a phosphor, and transmits light from the semiconductor light-emitting element. A resin or glass is disposed so as to cover the wavelength conversion member, and the resin or glass is fused to form a translucent member. Thereby, a translucent member can be arrange | positioned without providing a space | gap between wavelength conversion members, and the light-emitting device which can take out the emitted light from a semiconductor light-emitting element to the exterior efficiently can be obtained. At the same time, a light-emitting device exhibiting good light distribution characteristics can be obtained.

  ADVANTAGE OF THE INVENTION According to this invention, while being able to take out the emitted light from a semiconductor light-emitting element efficiently outside, the light-emitting device which shows a favorable light distribution characteristic, and its manufacturing method can be provided.

1 is a schematic perspective view showing a light emitting device according to a first embodiment of the present invention. It is a schematic sectional drawing which shows the light-emitting device which concerns on the 1st Embodiment of this invention. It is the schematic sectional drawing which expanded some light emitting devices concerning a 1st embodiment of the present invention. It is a schematic sectional drawing which shows the light-emitting device which concerns on the 2nd Embodiment of this invention. It is a schematic sectional drawing which shows the light-emitting device which concerns on the 3rd Embodiment of this invention. It is a schematic sectional drawing which shows the light-emitting device which concerns on the 4th Embodiment of this invention. It is a schematic sectional drawing which shows the light-emitting device which concerns on the 5th Embodiment of this invention. It is a schematic sectional drawing which shows the light-emitting device which concerns on the 6th Embodiment of this invention. It is a schematic sectional drawing which shows the conventional light-emitting device.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the embodiment described below exemplifies a light emitting device for embodying the technical idea of the present invention, and the present invention does not specify the light emitting device as follows. Unless otherwise specified, the dimensions, materials, shapes, relative arrangements, and the like of the constituent members are not merely intended to limit the scope of the present invention, but are merely illustrative examples. Note that the size, positional relationship, and the like of the members shown in each drawing may be exaggerated for clarity of explanation. Furthermore, each element which comprises this invention can also comprise a some element by one member, and conversely, one element can also be comprised by a plurality of members.

<First Embodiment>
FIG. 1 is a schematic perspective view showing a light emitting device according to a first embodiment of the present invention. FIG. 2 is a schematic cross-sectional view showing the light emitting device according to the first embodiment of the present invention. FIG. 3 is an enlarged schematic cross-sectional view of a part of the light emitting device according to the first embodiment.

  The light emitting device according to this embodiment includes a semiconductor light emitting element 110, a pedestal 120 on which the semiconductor light emitting element 110 is mounted, and a cap 130 that covers the semiconductor light emitting element 110 together with a part of the pedestal. The pedestal 120 includes a substantially disk-shaped pedestal bottom 121 having leads 123 for electrical connection with external electrodes, and a pedestal column 122 disposed on the upper surface of the pedestal bottom 121. The semiconductor light emitting device 110 is fixed to the side surface of the pedestal column portion 122 and is electrically connected to the lead 123 via a conductive member such as a wire. The cap 130 includes a cylindrical cap side portion 131 and a disk-shaped cap upper portion 132 that covers the upper end of the cap side portion 131. The cap 130 has the lower end of the cap side portion 131 joined to the upper surface of the pedestal bottom portion 121 so as to cover the semiconductor light emitting device 110 fixed to the pedestal column portion 122. A portion surrounded by the cap 130 and the pedestal bottom 121 is hollow, and the semiconductor light emitting device 110 is sealed with the cap 130 and the pedestal bottom 121. A through hole 135 penetrating the inside and outside of the cap 130 is formed in the central portion of the cap upper portion 132 in the thickness direction of the upper portion 132 of the cap. The light from the semiconductor light emitting device 110 passes through the through hole 135. In addition, a wavelength conversion member 140 that contains a phosphor and transmits light from the semiconductor light emitting device 110 is provided in the through hole 135. Examples of the wavelength conversion member 140 include a material obtained by dispersing phosphor particles in a light-transmitting material.

  On the cap 130, a translucent member 150 made of resin or glass is provided. The translucent member 150 is fixed to the upper surface of the cap upper portion 132 so as to cover the wavelength conversion member 140 provided in the through hole 135 of the cap 130. Here, the upper surface of the cap refers to a surface provided with a through hole and in contact with the outside. The translucent member 150 has a curved surface shape protruding in the direction of light emission from the through-hole 135 of the cap 130, and examples thereof include a substantially hemispherical shape or a substantially semielliptical sphere shape. The bottom surface of the translucent member 150 is in contact with the top surface of the wavelength conversion member 140. It is preferable that the bottom surface of the translucent member 150 has a shape corresponding to the top surfaces of the wavelength conversion member 140 and the cap upper portion 132.

  The semiconductor light emitting device 110 includes a light emitting surface 111 on the upper surface (upper side in FIG. 3), and is placed so that the light emitting surface 111 faces the upper surface of the cap 130. Further, the outgoing optical axis of the semiconductor light emitting element 110 substantially overlaps the central axis of the upper surface of the cap 130. That is, the central axis of the light emitted from the semiconductor light emitting element 110 substantially coincides with the central axis of the light emitting device 100, and the wavelength conversion member 140 and the translucent member 150 are disposed on the central axis.

In the light emitting device 100 according to the present embodiment, the light emitted from the semiconductor light emitting element 110 enters the wavelength conversion member 140 disposed in the through hole 135 of the cap 130, and then passes through the translucent member 150 to the outside. Released. Thereby, the light emitted from the wavelength conversion member 140 can be efficiently extracted to the outside. Since the translucent member 150 has a curved surface shape protruding in the light emission direction from the through hole 135 of the cap 130, the light extraction efficiency can be improved, and light with high directivity can be emitted. it can. Moreover, since the translucent member 150 is formed over the upper surfaces of the wavelength conversion member 140 and the cap 130, the adhesion strength of the translucent member 150 can be increased.
The individual members will be described below.

(Translucent member)
The translucent member is made of resin or glass, and is fixed to the upper surface of the cap so as to cover the wavelength conversion member. The light emitted from the wavelength conversion member is efficiently emitted to the outside through the translucent member. By adjusting the shape and size of the translucent member, desired light distribution characteristics can be obtained. The translucent member also has a role of protecting the wavelength conversion member from the outside and a role of preventing the wavelength conversion member from falling off the cap.
When the wavelength conversion member is fixed using an organic resin adhesive, the organic resin deteriorates due to yellowing or the like due to heat generation of the phosphor. This reduces the light extraction efficiency. By providing the translucent member, the wavelength conversion member can be fixed without using an organic resin, so that the light extraction efficiency can be kept high.

As the shape of the translucent member, one having a curved surface on the light emitting side is preferable because return light due to reflection can be reduced and light extraction efficiency is increased. In particular, a shape in which substantially the entire surface on the light emission side is a curved surface is preferable.
The translucent member has a substantially hemispherical shape or a substantially semi-elliptical sphere shape, so that a lens effect is generated and light emitted from the light emitting device can be collected. The substantially hemispherical shape or the substantially semi-elliptical sphere shape includes a shape having a plane or fine irregularities in a part thereof. In order to obtain good light distribution characteristics, it is preferable that the translucent member is located at the uppermost point and / or the portion located on the central axis of the through hole of the cap.
The translucent member has a height on the central axis of the through hole of the cap that is smaller than the radius of the bottom surface of the substantially hemispherical translucent member or the short radius of the translucent member of the approximately hemispherical sphere shape. preferable. As a result, light traveling in the direction of the central axis of the through hole of the cap can be extracted from the translucent member within a short travel distance. Light can be extracted.
In addition, it is preferable that the bottom surface of the translucent member has a shape corresponding to the top surfaces of the wavelength conversion member and the cap. The bottom surface of the translucent member is a surface on the side in contact with the top surface of the cap or the wavelength conversion member. Thereby, the adhesion strength of the translucent member can be increased. In particular, the translucent member is preferably in direct contact with the wavelength conversion member. By making contact without providing a gap between the wavelength conversion member and the translucent member, the light from the wavelength conversion member is not lost due to the gap between the translucent member and is efficiently externally provided. It can be taken out. When the wavelength conversion member is disposed at a position lower than the upper surface of the cap, the translucent member is preferably filled on the wavelength conversion member in the through hole of the cap.
Moreover, it is preferable that the planar shape of the bottom surface of the translucent member coincides with the upper surface of the cap. By increasing the contact area with the cap, the adhesion strength between the translucent member and the cap can be increased. Moreover, it becomes easy to transmit the heat which arises in a translucent member to a cap, and can improve heat dissipation.

The translucent member has a refractive index (n _out ) between the refractive index of the atmosphere (refractive index at a wavelength of 400 to 800: approximately 1) and the refractive index (n _in ) of the wavelength conversion member (that is, 1 <n _out <n _in ). Thereby, the reflection of the light in the surface by the side of the wavelength conversion member can be relieved, and the light of a semiconductor light-emitting device can be taken out efficiently. Here, the refractive index of a wavelength conversion member refers to the refractive index which wavelength conversion materials, such as fluorescent substance contained in a wavelength conversion member, have. Although the refractive index difference here is not particularly limited, for example, the refractive index of the translucent member is 1.6 to 1.79 if the refractive index of the wavelength conversion member is about 1.8 to 2.0. It is exemplified that it is about (preferably, about 1.6 to 1.7).

The translucent member can be formed of, for example, quartz glass, borosilicate glass, low-melting glass, silicone resin, epoxy resin, or a combination thereof.
The above-described translucent member tends to increase the absorption coefficient as the wavelength of light becomes shorter. For this reason, the wavelength conversion member described later preferably absorbs light from the semiconductor light emitting element and can emit light longer than the peak wavelength of the emission spectrum of the semiconductor light emitting element.

(Wavelength conversion member)
The wavelength conversion member has a function of emitting wavelength-converted light when irradiated with light emitted from the semiconductor light emitting element. Thereby, from the light emitting device, it is possible to take out the mixed color light of the light from the semiconductor light emitting element and the light whose wavelength is converted by the wavelength converting member.
A wavelength conversion member can obtain a desired wavelength by selecting what is necessary. In addition, a plurality of types of wavelength conversion members may exist. As a wavelength conversion member, what converts the light from a semiconductor light-emitting device into a longer wavelength is preferable.

  When a phosphor is used as the wavelength conversion material, the following method is exemplified as a method for obtaining white light. The first method excites a yellow light emitting phosphor with blue light emitted from a semiconductor light emitting element. Thereby, the yellow light partially converted in wavelength and the blue light not converted are mixed and emitted as white light. In the second method, red, blue, and yellow phosphors are excited by ultraviolet light emitted from the semiconductor light emitting device. The wavelength-converted three-color light is mixed and emitted as white. In the third method, green and red phosphors are excited by blue light emitted from the semiconductor light emitting device. Wavelength-converted two-color light and light from the light-emitting element are mixed and emitted as white

Examples of the wavelength conversion member include those obtained by mixing a phosphor with a light transmissive material such as glass, ceramics (ZrO ₂ , Al ₂ O ₃ , AlN, GaN), or resin. Moreover, what sintered only the fluorescent substance without using glass and resin used as a binder can also be used. An inorganic member in which a phosphor is dispersed, such as phosphor glass or phosphor-containing ceramics, is preferable because of its high heat resistance.

Typical phosphors include cadmium zinc sulfide associated with copper and YAG phosphors and LAG phosphors associated with cerium. In particular, at the time of high luminance and long-term use _{Re 3 (Al 1-y Ga} y) 5 O 12: Ce (0 ≦ y ≦ 1, where, Re is, Y, Gd, La, Lu , Tb, Sm YAG phosphors and LAG phosphors represented by the following formula: or sialon phosphors, which are at least one element selected from the group consisting of: A nitride-based phosphor represented by MSiAlN ₃ : Eu, MSi (B, Al) N ₃ : Eu (M = Ca, Sr, Ba) is preferable.
In addition, an appropriate member such as a viscosity extender, a light diffusing substance, or a pigment can be added to the wavelength conversion member according to the intended use.

It is preferable that the wavelength conversion member has a curved surface shape protruding in the light emission direction from the through hole of the cap. Thereby, it is possible to make it difficult for total reflection to occur in the light emission side portion of the wavelength conversion member, and it is possible to improve the light extraction efficiency. In addition, light with an adjusted divergence angle can be emitted. The uppermost point of the curved surface on the emission side of the wavelength conversion member is preferably located on or around the central axis of the through hole. As a result, it is possible to reduce variations in color tone due to the deviation of the optical axis. The shape of such a wavelength conversion member is not particularly limited. For example, a spherical shape, an elliptical spherical shape, a hemispherical shape, a semielliptical spherical shape, or a shape similar to these is preferable. In these shapes, some of them have a flat surface, fine irregularities, and bulges. In particular, those having curved surfaces on the light incident side and light emission side, such as a spherical shape and an elliptical spherical shape, cause not only total reflection on the light emission side in the wavelength conversion member but also total reflection on the light incident side. It is preferable because it can be made difficult. In particular, when the wavelength conversion member has a spherical shape or an elliptical sphere shape, the wavelength conversion member can be easily disposed in the through hole, and the optical axis can be adjusted efficiently.
The wavelength conversion member as described above is particularly effective when a semiconductor laser is used as the semiconductor light emitting element. Since the semiconductor laser light has high directivity, the wavelength conversion efficiency can be increased by having the wavelength conversion member have a predetermined thickness on the optical axis of the semiconductor laser.

The size of the wavelength conversion member may be any size as long as substantially all of the light traveling through the through hole of the cap is irradiated. Here, almost all means 80% or more of the entire emitted light. For example, the diameter of the wavelength conversion member is preferably substantially the same as the diameter of the light emission pattern of the semiconductor light emitting element. Thereby, the concentration of light on a part of the wavelength conversion member can be reduced, and deterioration of the wavelength conversion member can be reduced.
When the wavelength conversion member as described above is used, light that has passed through the wavelength conversion member without being wavelength-converted is emitted to the outside at the end of the wavelength conversion member, and this light may cause variations in color tone. . Therefore, it is preferable to form the translucent member so as to have a predetermined thickness on the end portion of the wavelength conversion member. In general, a translucent member made of the above-described material has an absorption coefficient that increases as the wavelength of light becomes shorter. By forming the translucent member as described above, light that has passed without being wavelength-converted by the wavelength conversion member is easily attenuated in the translucent member. For example, the radius of curvature of the translucent member is larger than the radius of curvature of the wavelength converting member, and the center of curvature of the translucent member is arranged closer to the semiconductor light emitting element than the center of curvature of the wavelength converting member. It is preferable. As a result, as shown in FIG. 3, since the moving distance of the light L1 traveling on the end of the wavelength conversion member becomes longer, the light component of the semiconductor light emitting element emitted from the end of the wavelength conversion member is reduced. Can do. Moreover, since the moving distance of the light L2 traveling on the central axis of the translucent member is shortened, light can be efficiently extracted in the direction of the central axis of the translucent member.

(cap)
The cap is for covering the semiconductor light emitting element, and particularly for sealing the semiconductor light emitting element in a case where the semiconductor light emitting element is disposed on the pedestal. The cap holds the wavelength conversion member.

  The shape of the cap is not particularly limited. For example, there are various types such as a bottomed cylinder (such as a cylinder or a prism) or a truncated cone (such as a truncated cone or a truncated pyramid), a dome, and their deformed shapes. Shape. In the light emitting device according to the present embodiment, the cap has a cylindrical cap side portion and an annular cap upper portion that covers the upper end of the cap side portion. The lower end of the cap side is attached to the pedestal bottom.

The cap has a through-hole through which light from the semiconductor light emitting element passes according to the mounting form of the semiconductor light emitting element on the base. The through hole may be formed in any part such as an upper part or a side part of the cap. In the light emitting device according to the present embodiment, a through hole is formed in the approximate center of the upper part of the cap as viewed from the light emitting direction side of the light emitting element. The central axis in the opening width of the through hole is substantially the same as the light emission axis from the semiconductor light emitting element. As a result, the wavelength conversion member can be disposed only in a region where almost all of the light from the semiconductor light-emitting element travels, so that the wavelength conversion rate can be improved and the optical loss can be reduced. That is, high-luminance light with stable wavelength conversion and little color unevenness can be emitted from the light emitting device.
In addition, about the number of through-holes, in this embodiment, what formed one through-hole is illustrated, However, Not only this but two or more two or more may be provided.

  The planar shape of the through hole is not particularly limited, and examples thereof include a polygon such as a circle, an ellipse, a rectangle, a square, and a rhombus in a plan view inside or outside the cap. Different planar shapes may be used on the inside and outside of the cap. The size of the through hole inside the cap can be appropriately adjusted according to the spread angle of the emitted light of the light emitting element, the distance between the light emitting element and the cap, and the like. In particular, at least inside the cap, it is preferable to match the outer shape and size of the emitted light of the semiconductor light emitting device. That is, it is only necessary that almost all the light emitted from the semiconductor light emitting element can enter the through hole. Here, almost all means 80% or more of the entire emitted light.

  The through hole preferably has a wide opening from the inner side (side closer to the semiconductor light emitting element) to the outer side (side far from the semiconductor light emitting element). Examples of the shape of such a through hole include an inverted truncated cone shape and a cup shape. The degree of spreading of the through hole from the inside to the outside of the cap is not particularly limited. For example, the through hole has an inclination angle of about 30 to 75 ° with respect to the cap surface spreading on the outer periphery of the through hole. Is preferred. Here, the inclination angle refers to an angle formed by the lower surface of the upper portion of the cap (the inner surface of the upper portion of the cap) and the inner wall of the through hole in the cross-sectional shape. By setting such an inclination angle, the light reflected on the inner surface of the wavelength conversion member can be efficiently reflected by the inner wall of the through hole, so that the light extraction efficiency can be improved.

  In addition, at least a part of a wavelength conversion member to be described later is supported in the through hole. The through hole may not support all of the wavelength conversion member within the through hole, and may be disposed so as to protrude inside or outside the cap, for example.

  Examples of the cap material include Ni—Fe alloy, Kovar, Ni, Co, Fe, and brass. Usually, the cap is bonded to the base by resistance welding or soldering. In particular, Fe—Ni alloy, Kovar, Ni, etc., which have high thermal conductivity and are capable of resistance welding using projection, are preferable.

In order to increase the light reflectance of the cap, a reflecting member having a reflectance higher than that of the cap material can be applied. In particular, it is preferable to apply a reflective member to the upper surface of the cap or the inner wall surface of the through hole. Moreover, in order to prevent the cap from being oxidized, Ni, Ag, or the like may be plated.
The reflecting member has an effect of reflecting the light emitted from the light emitting element or the light emitted from the wavelength conversion member. By providing the reflecting member, a light emitting device with high light extraction efficiency can be created. The reflection member can be provided on the entire surface of the base and the entire surface of the cap. In particular, it is preferable that the wavelength conversion member is disposed on a part of the inner wall of the through hole of the cap, or on the entire surface. The reflecting member is, for example, a metal such as Ag, Au, Al, Ni, In, Pd, or Ti and alloys thereof, AlN, SiO ₂ , TiO ₂ , Ta ₂ O ₅ , SiO, SiN, ZnO, or Al ₂ O _3. , Ti ₃ O ₅ , Ti ₂ O ₃ , TiO, Nb ₂ O ₅ , CeO ₅ , ZnS, MgF _{2 and} other multilayer films are preferable.

The reflective member may be covered with a protective film. The protective film has a function of suppressing deterioration of the reflecting member. By providing the protective film, the reflecting member can be prevented from coming into contact with the outside, and the chemical reaction and contamination of the reflecting member can be prevented. The protective film is preferably formed of a material having a high light transmittance. In particular, the light transmittance from the semiconductor light emitting element is preferably 70% or more. This is because the light reflected by the reflecting member can be efficiently extracted to the outside. Specifically, SiO ₂ , Al ₂ O ₃ , SiN, ITO, Si ₃ N ₄ , SiON, AlN, AlON, In ₂ O ₃ , SnO ₂ , TiO ₂ , ZnO, ZrO ₂ , MgF ₂ , Nb ₂ O ₅ , GaN, silicone resin, epoxy resin, etc., or a combination thereof. The protective film preferably has a refractive index substantially the same as the refractive index of the translucent member, or a refractive index between the refractive index of the translucent member and the refractive index of the wavelength conversion member. Moreover, a protective film can also contribute to adhesion | attachment with a cap, a wavelength conversion member, and a translucent member.

(Semiconductor light emitting device)
The semiconductor light emitting element is placed on the pedestal with, for example, a heat radiating member with the main light emitting surface facing upward. In the present embodiment, the main light emitting surface of the semiconductor light emitting device faces the lower surface of the upper portion of the cap.
Various semiconductor light emitting devices such as light emitting diodes and semiconductor lasers can be used. In the present embodiment, the semiconductor laser is described as being used, but the present invention is not limited to this. Since the semiconductor laser light has high directivity, light that has passed through the wavelength conversion member without being wavelength-converted in the portion where the thickness of the wavelength conversion member is small or the concentration of the phosphor contained in the wavelength conversion member is low. Are easily emitted, and color variations are likely to occur. The present invention is particularly effective when a semiconductor laser is used as the semiconductor light emitting device.
As the semiconductor laser element, one having an emission peak wavelength at 300 nm to 500 nm can be used, but one having an emission peak wavelength at 400 nm to 470 nm is preferable. In the present invention, only one semiconductor laser element may be arranged, or two or more semiconductor laser elements may be arranged. When a plurality of semiconductor laser elements are arranged, their wavelengths may be the same wavelength band or different. In particular, semiconductor laser elements corresponding to RGB may be arranged on the same heat radiating member. In addition, when a light emitting diode is used for the light emitting element, an end surface light emitting type is preferable.

(pedestal)
The pedestal includes a disk-shaped pedestal bottom portion and a columnar pedestal column portion arranged upright from the upper surface of the pedestal bottom portion. A lead extends vertically from the bottom surface of the pedestal bottom. The lead is for electrical connection with an external electrode. A semiconductor light emitting element is mounted on the side surface of the pedestal column through an eutectic bonding material such as Au-Sn or an adhesive. The semiconductor light emitting element is electrically connected to the lead through a wire or the like, and can be connected to the external electrode. Moreover, the lower end of the cap side portion is fixed near the periphery of the upper surface of the pedestal bottom portion.

The pedestal bottom can take a shape such as a square, a rectangle, a disk, a semicircle, or a polygon as viewed from the upper surface side. The pedestal column can take a cylindrical shape, a semi-cylindrical shape, a rectangular parallelepiped, a cube, a combination of these, and the like, with a part thereof being a flat surface.
The pedestal bottom part and the pedestal column part are not limited to different members, and both may be the same member. Thereby, the number of parts of a product can be reduced. Moreover, the pedestal bottom part and the pedestal column part may be composed of a plurality of members. Each member can be joined by brazing, such as Au-Sn, resistance welding, or soldering.

The members used for the pedestal bottom and pedestal column are preferably those having good thermal conductivity. Specific examples include metals such as copper, iron, cobalt, nickel, gold, aluminum, brass, tungsten, kovar, and stainless steel, or ceramics such as Al ₂ O ₃ , SiC, AlN, and diamond. . The light emitting device of the present invention preferably has a structure in which heat generated from the semiconductor light emitting element is conducted to the pedestal column and the pedestal bottom which are mechanically and electrically connected, and further released to the outside air. Moreover, it is preferable that the base of the base is determined in consideration of the adhesiveness with the cap material.
In addition, an insulating material may be used to provide a lead or the like in the pedestal. As the insulating material, ceramics such as ZrO ₂ , Al ₂ O ₃ , AlN, and SiC, resins such as silicone, epoxy, and peak, or low-melting glass can be used.

(Method for manufacturing light emitting device)
Below, the example of the manufacturing method of the light-emitting device which concerns on this embodiment is shown.
The semiconductor light emitting element is fixed to one side surface of a pedestal column placed in the central region of the upper surface of the pedestal bottom through an adhesive such as Au-Sn. The semiconductor light emitting element is electrically connected to the lead through a conductive member such as a wire, thereby enabling power supply from the external electrode to the semiconductor light emitting element.

  The cup-shaped cap is formed with a through-hole penetrating in the thickness direction on the upper surface thereof. A wavelength conversion member is disposed so as to close the through hole. The wavelength conversion member is bonded using, for example, low-melting glass or paste material, or is fused and fixed by heating or pressing. As the wavelength conversion member, a glass material in which a phosphor is dispersed is used.

Subsequently, a translucent member is formed on the upper surface of the cap. The following method is illustrated as a method of forming a translucent member. In the first method, a translucent member is formed by potting a silicone resin as a main component on the upper surface of a cap and then heating and curing. In the second method, the glass constituting the translucent member processed into a predetermined shape is placed on the upper surface of the cap, and the temperature is raised to the melting point of the glass in an atmosphere such as vacuum or nitrogen. Thereby, the translucent member is fused and fixed to the cap. In the third method, a mold for molding the translucent member is prepared, and a material constituting the translucent member is injected into the mold. Then, a translucent member is formed on a cap by shape | molding under pressure using a metal mold | die. By the above method, a translucent member can be arrange | positioned without providing a space | gap between wavelength conversion members.
<Second Embodiment>
FIG. 4 is a schematic cross-sectional view showing a light emitting device according to the second embodiment of the present invention.
The light emitting device according to the second embodiment differs from the light emitting device according to the first embodiment described above in the arrangement of the reflective member and the light transmissive member. In addition, there is a place overlapping with the first embodiment, and a part of the description may be omitted.
The light emitting device 200 according to the present embodiment includes a semiconductor light emitting element 210, a pedestal 220 on which the semiconductor light emitting element 210 is mounted, and a cap 230 that covers the semiconductor light emitting element 210 together with a part of the pedestal 220. The cap 230 is joined to the upper surface of the pedestal 220 so that the lower end of the side of the cap 230 covers the semiconductor light emitting element 210. A through hole 235 penetrating the inside and outside of the cap 230 is formed in the central portion of the upper portion of the cap 230 in the thickness direction of the upper portion of the cap 230. In the through hole 235, a wavelength conversion member 240 containing a phosphor and transmitting light from the semiconductor light emitting element 210 is provided. Examples of the wavelength conversion member 240 include a material obtained by dispersing phosphor particles in a light-transmitting material.

  A translucent member 250 made of resin or glass is provided on the cap 230. The translucent member 250 is fixed to the upper surface of the cap 230 so as to cover the wavelength conversion member 240 provided in the through hole 235 of the cap 230. The translucent member 250 has a curved surface shape protruding in the direction of light emission from the through-hole 235 of the cap 230, and examples thereof include a substantially hemispherical shape or a substantially semielliptical spherical shape. The bottom surface of the translucent member 250 is in contact with the top surface of the wavelength conversion member 240.

  In the present embodiment, the reflection member 260 is provided on the entire top surface of the cap 230. Thereby, it is possible to efficiently reflect the light reflected at the interface of the translucent member 250 and returning to the upper surface direction of the cap 230, and the light extraction efficiency can be improved. A protective film 270 is provided on the reflecting member 260. By providing the protective film 270 on the entire top surface of the cap 230, the adhesion strength of the translucent member 250 can be increased.

In the light emitting device 200 according to the present embodiment, the emitted light from the semiconductor light emitting element 210 is incident on the wavelength conversion member 240 disposed in the through hole 235 of the cap 230, and then to the outside via the translucent member 250. Released. Thereby, the light radiate | emitted from the wavelength conversion member 240 can be taken out efficiently. Since the translucent member 250 has a curved surface shape protruding in the light emission direction from the through hole 235 of the cap 230, it is possible to improve the light extraction efficiency and to emit light with strong directivity. it can. Moreover, since the translucent member 250 is formed over the upper surfaces of the wavelength conversion member 240 and the cap 230, the adhesion strength of the translucent member 250 can be increased.
<Third Embodiment>
FIG. 5 is a schematic sectional view showing a light emitting device according to the third embodiment of the present invention.
The light emitting device according to the third embodiment differs from the light emitting device according to the first embodiment described above in the arrangement of the reflecting member and the translucent member. In addition, there is a place overlapping with the first embodiment, and a part of the description may be omitted.
The light emitting device 300 according to this embodiment includes a semiconductor light emitting element 310, a pedestal 320 on which the semiconductor light emitting element 310 is mounted, and a cap 330 that covers the semiconductor light emitting element 310 together with a part of the pedestal 320. The lower end of the side portion of the cap 330 is joined to the upper surface of the pedestal 320 so as to cover the semiconductor light emitting element 310. A through hole 335 penetrating the inside and outside of the cap 330 is formed in the central portion of the upper portion of the cap 330 in the thickness direction of the upper portion of the cap 330. In the through hole 335, a wavelength conversion member 340 that contains a phosphor and transmits light from the semiconductor light emitting element 310 is provided. Examples of the wavelength conversion member 340 include a material obtained by dispersing phosphor particles in a translucent material.

  On the cap 330, a translucent member 350 made of resin or glass is provided. The translucent member 350 is fixed to the upper surface of the cap 330 so as to cover the wavelength conversion member 340 provided in the through hole 335 of the cap 330. Moreover, the translucent member 350 has a curved surface shape protruding in the direction of light emission from the through hole of the cap, and includes, for example, a substantially hemispherical shape or a substantially semielliptical sphere shape. The bottom surface of the translucent member 350 is in contact with the top surface of the wavelength conversion member 340.

  In the present embodiment, a reflective member 360 is provided on a part of the upper surface of the cap 330. Of the upper surface of the cap 330, the peripheral portion of the through hole 335 and the periphery thereof are covered with a reflective member 360. Further, a protective film 370 is provided on the reflecting member 360. On the other hand, the end portion of the upper surface of the cap 330 and the periphery thereof are not covered with the reflecting member 360 or the protective film 370. In the present embodiment, since the end portion of the reflection member 360 is covered with the translucent member 350 by the translucent member 350, deterioration at the end portion of the reflection member 360 can be prevented.

In the light emitting device 300 according to the present embodiment, the emitted light from the semiconductor light emitting element 310 is incident on the wavelength conversion member 340 disposed in the through hole 335 of the cap 330, and then to the outside via the translucent member 350. Released. Thereby, the light radiate | emitted from the wavelength conversion member 340 can be taken out outside efficiently. Since the translucent member 350 has a curved surface shape protruding in the direction of light emission from the through-hole 335 of the cap 330, it is possible to improve light extraction efficiency and emit light with high directivity. it can. Further, since the translucent member 350 is formed over the upper surfaces of the wavelength conversion member 340 and the cap 330, the adhesion strength of the translucent member 350 can be increased.
<Fourth Embodiment>
FIG. 6 is a schematic cross-sectional view showing a light emitting device according to the fourth embodiment of the present invention.
The light emitting device according to the fourth embodiment differs from the light emitting device according to the first embodiment described above in the arrangement of the reflective member and the light transmissive member. In addition, there is a place overlapping with the first embodiment, and a part of the description may be omitted.
The light emitting device 400 according to this embodiment includes a semiconductor light emitting element 410, a base 420 on which the semiconductor light emitting element 410 is mounted, and a cap 430 that covers the semiconductor light emitting element 410 together with a part of the base 420. The lower end of the side portion of the cap 430 is joined to the upper surface of the base 420 so as to cover the semiconductor light emitting element 410. A through hole 435 that penetrates the inside and outside of the cap 430 in the thickness direction of the upper portion of the cap 430 is formed at the center of the upper portion of the cap 430. The through hole 435 of the cap 430 is a wide opening from the inner side (side closer to the semiconductor light emitting element) to the outer side (side far from the semiconductor light emitting element). In the through hole 435, a wavelength conversion member 440 that contains a phosphor and transmits light from the semiconductor light emitting element is provided. Examples of the wavelength conversion member 440 include a material obtained by dispersing phosphor particles in a translucent material.

  On the cap 430, a translucent member 450 made of resin or glass is provided. The translucent member 450 is fixed to the upper surface of the cap 430 so as to cover the wavelength conversion member 440 provided in the through hole 435 of the cap 430. The translucent member 450 has a curved surface shape that protrudes in the direction of light emission from the through hole 435 of the cap 430. For example, the translucent member 450 may have a substantially hemispherical shape or a substantially hemispherical spherical shape. The bottom surface of the translucent member 450 is in contact with the top surface of the wavelength conversion member 440.

  In the present embodiment, the reflection member 460 is provided on the upper surface of the cap 430 and the inner wall surface of the through hole 435. Thereby, it becomes possible to re-reflect the return light from the translucent member 450 and the wavelength conversion member 440, and to improve light extraction efficiency. A protective film 470 is provided on the reflecting member 460. Thereby, the contact | adhesion intensity | strength of the wavelength conversion member 440 and the translucent member 450 can be raised.

In the light emitting device 400 according to the present embodiment, the light emitted from the semiconductor light emitting element 410 is incident on the wavelength conversion member 440 disposed in the through hole 435 of the cap 430, and then to the outside through the translucent member 450. Released. Thereby, the light emitted from the wavelength conversion member 440 can be efficiently extracted to the outside. Since the translucent member 450 has a curved surface shape protruding in the light emission direction from the through hole 435 of the cap 430, the light extraction efficiency can be improved, and light with high directivity can be emitted. it can. Moreover, since the translucent member 450 is formed over the upper surfaces of the wavelength conversion member 440 and the cap 430, the adhesion strength of the translucent member 450 can be increased.
<Fifth Embodiment>
FIG. 7 is a schematic cross-sectional view showing a light emitting device according to the fifth embodiment of the present invention.
The light emitting device according to the fifth embodiment differs from the light emitting device according to the first embodiment described above in the shapes of the cap and the wavelength conversion member. In addition, there is a place overlapping with the first embodiment, and a part of the description may be omitted.
The light emitting device 500 according to the present embodiment includes a semiconductor light emitting element 510, a base 520 on which the semiconductor light emitting element 510 is mounted, and a cap 530 that covers the semiconductor light emitting element 510 together with a part of the base 520. The lower end of the side portion of the cap 530 is joined to the upper surface of the pedestal 520 so as to cover the semiconductor light emitting element 510. A through hole 535 is formed in the center of the upper portion of the cap 530 so as to penetrate the inside and outside of the cap 530 in the thickness direction of the upper portion of the cap 530. The through-hole 535 of the cap 530 includes a first through-hole 535a located inside the cap 530 (side closer to the semiconductor light-emitting element) and a second through-hole located outside the cap 530 (side far from the semiconductor light-emitting element). Hole 535b. The first through hole 535a has a smaller diameter than the second through hole 535b, and a step portion due to an inner diameter difference is formed between the first through hole 535a and the second through hole 535b. A wavelength conversion member 540 that contains a phosphor and transmits light from the semiconductor light emitting element is provided in the second through hole 535b. Examples of the wavelength conversion member 540 include a material obtained by dispersing phosphor particles in a translucent material. The wavelength conversion member has a substantially plate shape. Thereby, the contact area of a cap and a wavelength conversion member becomes large, and it becomes easy to radiate the heat which arises from a wavelength conversion member to a cap.

  On the cap 530, a translucent member 550 made of resin or glass is provided. The translucent member 550 is fixed to the upper surface of the cap upper portion 532 so as to cover the wavelength conversion member 540. The translucent member 550 has a curved surface shape protruding in the direction of light emission from the through hole 535 of the cap 530, and examples thereof include a substantially hemispherical shape or a substantially semielliptical spherical shape. The bottom surface of the translucent member 550 is in contact with the top surface of the wavelength conversion member 540.

  In the present embodiment, the reflecting member 560 is provided in the second through hole and the step portion of the cap 530. Thereby, the return light from the translucent member 550 and the wavelength conversion member 540 can be rereflected, and the light extraction efficiency can be improved. A protective film 570 is provided on the reflecting member 560. Thereby, the adhesion strength of the wavelength conversion member 540 can be increased.

  In the light emitting device 500 according to the present embodiment, the light emitted from the semiconductor light emitting element 510 is incident on the wavelength conversion member 540 disposed in the through hole 535 of the cap 530, and then to the outside via the translucent member 550. Released. Thereby, the light emitted from the wavelength conversion member 540 can be efficiently extracted to the outside. Since the translucent member 550 has a curved surface shape protruding in the direction of light emission from the through hole 535 of the cap 530, the light extraction efficiency can be improved and light with high directivity can be emitted. it can. Moreover, since the translucent member 550 is formed over the upper surfaces of the wavelength conversion member 540 and the cap 530, the adhesion strength of the translucent member 550 can be increased.

<Sixth Embodiment>
FIG. 8 is a schematic cross-sectional view showing a light emitting device according to the sixth embodiment of the present invention.
The light emitting device according to the sixth embodiment differs from the light emitting device according to the first embodiment described above in the shape of the base and the cap, and the arrangement of the light emitting element and the wavelength conversion member. In addition, there is a place overlapping with the first embodiment, and a part of the description may be omitted.

The light emitting device 600 according to the present embodiment includes a semiconductor light emitting element 610, a pedestal 620 on which the semiconductor light emitting element 510 is mounted, and a cap 630 that covers the semiconductor light emitting element 610. The pedestal 620 is wired with a circuit pattern so as to be electrically connected to an external electrode, and the semiconductor light emitting element 610 and the pedestal 620 are electrically connected by a wire, solder, or the like. The semiconductor light emitting element 510 emits light in a direction substantially parallel to the surface of the pedestal 620. A cap 630 covering the semiconductor light emitting element 610 is fixed to the surface of the pedestal 520. The cap 630 is formed with a through hole 635 penetrating the inside and outside of the cap 630 on a surface extending vertically from the base 620. The light from the semiconductor light emitting element 610 passes through the through hole 635. In addition, a wavelength conversion member 640 that contains a phosphor and transmits light from the semiconductor light emitting element 610 is provided in the through hole 635. Examples of the wavelength conversion member 640 include a material obtained by dispersing phosphor particles in a light-transmitting material.
A translucent member 650 made of resin or glass is provided on the upper surface of the cap 630. The translucent member 650 covers the wavelength conversion member 640 provided in the through hole 635 of the cap 630. The upper surface of the cap 630 refers to a surface provided with a through hole 635 and in contact with the outside. In the present embodiment, the surface extending vertically from the pedestal 620 is the upper surface. The translucent member 650 has a curved surface shape that protrudes in the direction of light emission from the through-hole 635 of the cap 630, and includes, for example, a substantially hemispherical shape or a substantially semi-elliptical sphere shape. The bottom surface of the translucent member 650 is in contact with the wavelength conversion member 640.

  The light emitting device 600 according to the present embodiment can emit light in a direction substantially parallel to the surface of the pedestal 620. In the light emitting device 600 according to the present embodiment, the emitted light from the semiconductor light emitting element 610 is incident on the wavelength conversion member 640 disposed in the through hole 635 of the cap 630, and then to the outside via the translucent member 650. Released. Thereby, the light emitted from the wavelength conversion member 640 can be efficiently extracted to the outside. Since the translucent member 650 has a curved surface shape protruding in the light emission direction from the through hole 635 of the cap 630, the light extraction efficiency can be improved, and light with high directivity can be emitted. it can. Moreover, since the translucent member 650 is formed over the upper surfaces of the wavelength conversion member 640 and the cap 630, the adhesion strength of the translucent member 650 can be increased.

Examples according to the present invention will be described in detail below. Needless to say, the present invention is not limited to the following examples.

Example 1
FIG. 2 is a schematic cross-sectional view illustrating the light emitting device according to the first embodiment.
The light emitting device according to Example 1 includes a semiconductor light emitting element 110, a pedestal 120 on which the semiconductor light emitting element 110 is mounted, and a through hole 135 through which light from the semiconductor light emitting element 110 passes, and the semiconductor light emitting element 110 is sealed. And a wavelength conversion member 140 that is supported in the through hole 135 of the cap 130, contains a phosphor, and transmits light from the semiconductor light emitting device 110. In addition, a translucent member 150 that covers the wavelength conversion member 140 is disposed on the cap 130.
The pedestal 120 includes a lead 123, a pedestal bottom 121, and a pedestal column 122. The pedestal bottom part 121 and the pedestal column part 122 are mainly composed of iron (Fe) and copper (Cu). The lead 123 is fixed to the pedestal bottom 121 with low melting point glass. As the semiconductor light emitting device 110, a GaN based semiconductor laser having an emission spectrum peak wavelength near 445 nm is used. The cap 130 has a shape in which the upper end of the cylinder is covered with an annular upper surface, and a circular penetration through which light emitted from the semiconductor light emitting device 110 passes through a portion facing the light emitting surface of the semiconductor light emitting device 110. A hole 135 is formed. The diameter of the through hole 135 is 1000 μm. The distance from the light emitting surface of the semiconductor light emitting device 110 to the cap 130 (through hole 135) is approximately 250 μm. The thickness of the cap 130 is, for example, about 0.85 mm. As the cap 130, Kovar is used.
As the wavelength conversion member 140, a glass material in which a phosphor is dispersed is used. As the phosphor, a YAG phosphor and a LAG phosphor are used. The wavelength conversion member 140 has a substantially elliptical shape having a substantially elliptical shape in cross section and a substantially spherical shape in plan view. The wavelength conversion member 140 is bonded in the through hole 135 of the cap 130 using a silicone resin.

  As the translucent member 150, borosilicate glass is used. The translucent member 150 has a substantially hemispherical shape, and is formed so that the curvature radius of the curved surface of the translucent member 150 is larger than the thickness of the translucent member 150 on the central axis of the through hole 135.

In this semiconductor light emitting device, the wavelength conversion member 140 and the translucent member 150 can be formed as follows, for example.
First, the above-described cap 130 made of a desired metal is prepared.
Next, the wavelength conversion member 140 processed into a predetermined shape is bonded to the through hole 135 of the cap 130 using a silicone resin.
Subsequently, glass constituting the translucent member processed into a predetermined shape is disposed on the upper surface of the cap 130, and the temperature is raised to the melting point of the glass in an atmosphere such as vacuum or nitrogen. Thereby, the translucent member 150 is fused and fixed to the cap 130.

  The light emitting device produced as described above can obtain white color by mixing the light emitted from the semiconductor light emitting element and the light converted by the wavelength conversion member. Further, it is possible to realize a light-emitting device that can emit light with an adjusted divergence angle, has high light extraction efficiency, and has less variation in color tone.

(Example 2)
FIG. 6 is a schematic cross-sectional view illustrating the light emitting device according to the second embodiment. The light-emitting device according to Example 2 is different from the light-emitting device according to Example 1 described above in the shape of the cap through-hole and the arrangement of the reflective member and the protective film. In addition, there is a part which overlaps with Example 1, and a part of explanation may be omitted.
The light emitting device according to Example 2 includes a semiconductor light emitting element 410, a pedestal 420 on which the semiconductor light emitting element 410 is mounted, and a through hole 435 through which light from the semiconductor light emitting element 410 passes, and the semiconductor light emitting element 410 is sealed. And a wavelength conversion member 440 that is supported in the through-hole 435 of the cap 430, contains a phosphor, and transmits light from the semiconductor light emitting element 410. In addition, a translucent member 450 that covers the wavelength conversion member 440 is disposed on the cap 430.
The pedestal bottom part 421 and the pedestal column part 422 are mainly composed of iron (Fe) and copper (Cu). The lead 423 is fixed to the pedestal bottom 421 by low melting point glass. The semiconductor light-emitting element 410 uses a GaN-based semiconductor laser having an emission spectrum peak wavelength near 445 nm.
As the cap 430, Kovar is used. The through hole 435 of the cap 430 has a shape that becomes a wide opening from the inside facing the semiconductor light emitting element 410 to the outside. The diameter of the through hole 435 is 300 μm inside the cap 430 and 1200 μm outside, and the inclination angle (α in FIG. 6) of the inner wall of the through hole 435 is 60 °. The distance from the light emitting surface of the semiconductor light emitting element 410 to the cap 430 (through hole 435) is approximately 800 μm. The thickness of the cap 430 is about 800 μm. A reflective member 460 made of Ag is provided on a part of the outer surface of the cap 430 from the inner wall of the through hole 435 of the cap 430. A protective film 470 made of SiO ₂ is formed on the reflecting member 460.
As the wavelength conversion member 440, a glass material in which a phosphor is dispersed is used. As the phosphor, a YAG phosphor and a LAG phosphor are used. The wavelength converting member 440 has a substantially elliptical shape having a substantially elliptical shape in cross section and a substantially spherical shape in plan view.

  As the translucent member 450, borosilicate glass is used. The translucent member 450 is bonded to the cap 430 through a reflective member 460 and a protective film 470 formed on the upper surface of the cap 430. The translucent member 450 has a substantially hemispherical shape, and is formed so that the curvature radius of the curved surface of the translucent member 450 is larger than the thickness of the translucent member 450 on the central axis of the through hole 435.

In the semiconductor light emitting device 400, the wavelength conversion member 440 and the translucent member 450 can be formed as follows, for example.
First, the above-described cap 430 made of a desired metal is prepared. The through hole 435 of the cap 430 is processed into a shape having a wide opening from the inside to the outside. A reflective member 460 and a protective film 470 are sequentially formed on the inner wall and the upper surface of the through hole 435 of the cap 430. The reflecting member 460 and the protective film 470 can be formed by sputtering, for example.
As the wavelength conversion member 440, a glass having a diameter larger than the minimum diameter of the through-hole 435 and smaller than the maximum diameter and containing a phosphor is prepared. A spherical wavelength conversion member 440 is placed in the through hole 435 of the cap 430, and the wavelength conversion member 440 is fixed to the cap 430 by fusion by arbitrary heating.
Subsequently, the glass constituting the translucent member processed into a predetermined shape is disposed on the upper surface of the cap 430, and the temperature is raised to the melting point of the glass in an atmosphere such as vacuum or nitrogen. Thereby, the translucent member 450 is fused and fixed to the cap.

  In the light emitting device 400 created as described above, white color is obtained by the color mixture of the light emitted from the semiconductor light emitting element 410 and the light converted by the wavelength conversion member 440. Further, it is possible to realize a light-emitting device that can emit light with an adjusted divergence angle, has high light extraction efficiency, and has less variation in color tone.

  The light-emitting device of the present invention can be used for lighting fixtures, on-vehicle lighting, displays, indicators, and the like.

100, 200, 300, 400, 500, 600 Light emitting device 110, 210, 310, 410, 510, 610 Light emitting element 120, 220, 320, 420, 520, 620 Pedestal 121, 221 321 321, 621 Pedestal bottom 122 222, 322, 422, 622 Pedestal column 130, 230, 330, 430, 530, 630 Cap 131 Cap side portion 132 Cap upper portion 135, 235, 335, 435, 535, 635 Through hole 140, 240, 340, 440 540, 640 Wavelength conversion member 150, 250, 350, 450, 550, 650 Translucent member 260, 360, 460, 560, 660 Reflective member 270, 370, 470, 570, 670 Protective film 700 Light emitting device 710 Semiconductor laser Element 720 Stem 730 Flop 735 is taken out window 740 phosphor layer

Claims (8)

A semiconductor light emitting device;
A base on which the semiconductor light emitting element is mounted;
A cap having a through hole for allowing light from the semiconductor light emitting element to pass through; and a cap for sealing the semiconductor light emitting element;
A wavelength conversion member that is supported in the through-hole of the cap, contains a phosphor, and transmits light from the semiconductor light-emitting element;
A light-emitting device comprising a light-transmitting member made of resin or glass having a curved shape that covers the wavelength conversion member and protrudes in a light emission direction from the through-hole of the cap on the cap. .   The light-emitting device according to claim 1, wherein the translucent member is filled on the light transmitting body in the through hole of the cap.   The light-emitting device according to claim 1, wherein the translucent member has a substantially hemispherical shape or a substantially hemispherical shape.   The translucent member has a height on a central axis of a through hole of the cap that is smaller than a substantially hemispherical radius or a semispherical spherical short radius of the translucent member. Item 4. The light emitting device according to Item 3.   The light emitting device according to claim 1, wherein the wavelength conversion member has a substantially spherical shape or a substantially elliptical spherical shape. A radius of curvature of the translucent member is larger than a radius of curvature of the wavelength converting member;
6. The light emitting device according to claim 5, wherein the center of curvature of the translucent member is disposed closer to the semiconductor light emitting element than the center of curvature of the wavelength conversion member.   The light emitting device according to claim 1, wherein a bottom surface of the translucent member coincides with an upper surface of the cap. A semiconductor light emitting device;
A base on which the semiconductor light emitting element is mounted;
A cap having a through hole for allowing light from the semiconductor light emitting element to pass through; and a cap for sealing the semiconductor light emitting element;
A wavelength conversion member that is supported in the through-hole of the cap, contains a phosphor, and transmits light from the semiconductor light-emitting element;
Producing a light-emitting device, comprising: placing a resin or glass on the cap so as to cover the wavelength conversion member; and fusing the resin or glass to form a translucent member. Method.

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