JP2014212220A - Light emitting device - Google Patents

Light emitting device Download PDF

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JP2014212220A
JP2014212220A JP2013087952A JP2013087952A JP2014212220A JP 2014212220 A JP2014212220 A JP 2014212220A JP 2013087952 A JP2013087952 A JP 2013087952A JP 2013087952 A JP2013087952 A JP 2013087952A JP 2014212220 A JP2014212220 A JP 2014212220A
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light
inclined surface
wavelength conversion
wall
emitting device
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JP5971180B2 (en
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幸宏 林
Yukihiro Hayashi
幸宏 林
武史 岡田
Takeshi Okada
武史 岡田
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Nichia Chemical Industries Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action

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  • Condensed Matter Physics & Semiconductors (AREA)
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Abstract

PROBLEM TO BE SOLVED: To provide a light emitting device which efficiently extracts outgoing beams from a semiconductor laser element from the light emitting device and which is excellent in light distribution characteristics.SOLUTION: A light emitting device comprises: a semiconductor laser element for emitting laser beams; a wavelength conversion member 62 which includes phosphor excited by the laser beams; and a support member 66 which has an inner wall for forming a through hole 61 and supports the wavelength conversion member 62 at the inner wall. The inner wall of the support member 66 has sequentially from the light incident side toward the light outgoing side: a first inclined plane 67 which forms a first angle 67a between an optical axis 69 of the laser beams and the inner wall; and a second inclined plane 68 which forms a second angle 68a larger than the first angle 67a between the optical axis and the inner wall. The wavelength conversion member 62 has a bottom located closer to the light outgoing side than the light incident side end of the through hole 61, and has sequentially from the light incident side toward the light outgoing side: a fixed region 62A fixed at least at the second inclined plane 68; and a separated region 62B separated from the second inclined plane 68 in a direction perpendicular to the optical axis of the laser beams.

Description

本発明は、半導体レーザ素子と波長変換部材とを備えた発光装置に関するものである。   The present invention relates to a light emitting device including a semiconductor laser element and a wavelength conversion member.

近年、半導体レーザ素子を光源として用いた発光装置が提案されている（特許文献１）。これらの発光装置は、貫通孔を有する支持部材と、貫通孔を塞いで配置された透光部材と、を備えており、光源からの光は透光部材を介して出射される。   In recent years, a light emitting device using a semiconductor laser element as a light source has been proposed (Patent Document 1). These light emitting devices include a support member having a through hole and a translucent member arranged so as to close the through hole, and light from the light source is emitted through the translucent member.

特開２００８−１５３６１７号公報JP 2008-153617 A

従来の発光装置においては、配光特性や光取り出し効率について、さらに検討する余地がある。そこで、本発明は、配光特性及び光取り出し効率がより優れた発光装置を提供することを課題とする。   In a conventional light emitting device, there is room for further study on light distribution characteristics and light extraction efficiency. Therefore, an object of the present invention is to provide a light-emitting device that has more excellent light distribution characteristics and light extraction efficiency.

発光装置は、レーザ光を出射する半導体レーザ素子と、レーザ光により励起される蛍光体を含む波長変換部材と、貫通孔を形成する内壁を有し前記内壁において波長変換部材を支持する支持部材と、を備える。支持部材の内壁は、光入射側から光出射側に向かって順に、レーザ光の光軸と内壁とが第１角度をなす第１傾斜面と、レーザ光の光軸と内壁とが第１角度よりも大きい第２角度をなす第２傾斜面と、を有する。そして、波長変換部材は、その底部が貫通孔の光入射側端部よりも光出射側にあり、光入射側から光出射側に向かって順に、少なくとも第２傾斜面において固定された固定領域と、レーザ光の光軸と垂直をなす方向において第２傾斜面から離間した離間領域と、を有する。   The light emitting device includes a semiconductor laser element that emits laser light, a wavelength conversion member that includes a phosphor excited by the laser light, a support member that has an inner wall that forms a through hole, and supports the wavelength conversion member on the inner wall. . The inner wall of the support member has, in order from the light incident side to the light emitting side, a first inclined surface in which the optical axis of the laser beam and the inner wall form a first angle, and the optical axis of the laser beam and the inner wall form a first angle. And a second inclined surface having a larger second angle. The wavelength conversion member has a bottom portion that is closer to the light emission side than the light incident side end of the through hole, and a fixed region that is fixed at least on the second inclined surface in order from the light incident side to the light emission side. And a separation region separated from the second inclined surface in a direction perpendicular to the optical axis of the laser light.

第１実施形態に係る発光装置の光部品を説明するための断面図である。It is sectional drawing for demonstrating the optical component of the light-emitting device which concerns on 1st Embodiment. 第１実施形態に係る発光装置の光部品を説明するための斜視図である。It is a perspective view for demonstrating the optical component of the light-emitting device which concerns on 1st Embodiment. 第１実施形態に係る発光装置を説明するための図である。It is a figure for demonstrating the light-emitting device which concerns on 1st Embodiment. 第２実施形態に係る発光装置を説明するため断面図である。It is sectional drawing for demonstrating the light-emitting device which concerns on 2nd Embodiment.

以下、本発明の実施の形態を図面に基づいて説明する。ただし、以下に示す実施の形態は、本発明の技術思想を具体化するための、発光装置を例示するものであって、本発明は、発光装置を以下のものに特定しない。また、特定的な記載がない限りは、構成部材の寸法、材質、形状、その相対的配置等は、本発明の範囲をそれのみに限定する趣旨ではなく、単なる説明例にすぎない。   Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the embodiment described below exemplifies a light emitting device for embodying the technical idea of the present invention, and the present invention does not specify the light emitting device as follows. Unless otherwise specified, the dimensions, materials, shapes, relative arrangements, and the like of the constituent members are not merely intended to limit the scope of the present invention, but are merely illustrative examples.

＜第１実施形態＞
図３に、第１実施形態に係る発光装置１００の概略図を示す。図１は、発光装置１００に用いられる光部品６０、光ファイバ４０及び先端部材５０の関係を説明するための断面図である。また、図２は光部品６０の斜視図であり、図２のＸ−Ｘにおける端面図が図１に相当する。 <First Embodiment>
FIG. 3 is a schematic view of the light emitting device 100 according to the first embodiment. FIG. 1 is a cross-sectional view for explaining the relationship among the optical component 60, the optical fiber 40, and the tip member 50 used in the light emitting device 100. 2 is a perspective view of the optical component 60, and an end view taken along line XX in FIG. 2 corresponds to FIG.

発光装置１００は、レーザ光を出射する半導体レーザ素子１１と、レーザ光により励起される蛍光体を含む波長変換部材６２と、貫通孔６１を形成する内壁を有し内壁において波長変換部材６２を支持する支持部材６６と、を備える。支持部材６６の内壁は、光入射側から光出射側に向かって順に、レーザ光の光軸６９と支持部材６６の内壁とが第１角度６７ａをなす第１傾斜面６７と、レーザ光の光軸６９と支持部材６６の内壁とが第１角度６７ａよりも大きい第２角度６８ａをなす第２傾斜面６８と、を有する。さらに、波長変換部材６２は、その底部が貫通孔６１の光入射側端部よりも光出射側にあり、光入射側から光出射側に向かって順に、波長変換部材６２が貫通孔６１の光入射側端部から離間するように少なくとも第２傾斜面６８において固定された固定領域６２Ａと、レーザ光の光軸６９と垂直をなす方向において波長変換部材６２が第２傾斜面６８から離間した離間領域６２Ｂと、を有している。   The light emitting device 100 includes a semiconductor laser element 11 that emits laser light, a wavelength conversion member 62 that includes a phosphor excited by the laser light, and an inner wall that forms a through hole 61, and supports the wavelength conversion member 62 on the inner wall. And a support member 66. The inner wall of the support member 66 has, in order from the light incident side to the light emission side, a first inclined surface 67 in which the optical axis 69 of the laser light and the inner wall of the support member 66 form a first angle 67a, and the light of the laser light. The shaft 69 and the inner wall of the support member 66 have a second inclined surface 68 that forms a second angle 68a that is larger than the first angle 67a. Further, the bottom of the wavelength conversion member 62 is located on the light emission side from the light incident side end of the through hole 61, and the wavelength conversion member 62 is arranged in the order from the light incident side toward the light emission side. A fixed region 62A fixed at least on the second inclined surface 68 so as to be separated from the incident side end portion, and a separation in which the wavelength conversion member 62 is separated from the second inclined surface 68 in a direction perpendicular to the optical axis 69 of the laser beam. And a region 62B.

これにより、光取り出し効率及び配光特性に優れた発光装置とすることができる。以下、この点について説明する。   Thereby, it can be set as the light-emitting device excellent in the light extraction efficiency and the light distribution characteristic. Hereinafter, this point will be described.

波長変換部材６２は貫通孔６１の内部に配置されるが、貫通孔６１の光入射側端部（図１における貫通孔の最下方の開口部）まで波長変換部材６２が設けられていると、光取り出し効率が低下してしまう。これは、波長変換部材６２の底部あるいはその近傍の蛍光体粒子にレーザ光が当たった際に、一部の光が半導体レーザ素子１１側に戻ってしまう（以下、このような光を「戻り光」という。）からである。これを抑制するには、光入射側から光出射側に向かって開口部が大きくなるように貫通孔６１を傾斜させ、かつ、貫通孔６１の光入射側端部から波長変換部材６２の底部を光出射側に離間させればよい（つまり、波長変換部材６２の底部が貫通孔６１の途中に位置するように構成すればよい）。これにより、たとえ戻り光が生じたとしても、少なくともその一部を貫通孔６１を構成する傾斜面にて光出射側に反射させることができる。   The wavelength conversion member 62 is disposed inside the through hole 61. When the wavelength conversion member 62 is provided up to the light incident side end of the through hole 61 (the lowermost opening of the through hole in FIG. 1), The light extraction efficiency is reduced. This is because part of the light returns to the semiconductor laser element 11 side when the laser beam hits the phosphor particles near or at the bottom of the wavelength conversion member 62 (hereinafter, such light is referred to as “return light”). "). In order to suppress this, the through hole 61 is inclined so that the opening becomes larger from the light incident side toward the light emitting side, and the bottom of the wavelength conversion member 62 is moved from the light incident side end of the through hole 61. What is necessary is just to make it isolate | separate to the light-projection side (that is, you may comprise so that the bottom part of the wavelength conversion member 62 may be located in the middle of the through-hole 61). Thereby, even if return light is generated, at least a part thereof can be reflected by the inclined surface constituting the through hole 61 to the light emitting side.

一方、波長変換部材６２には、レーザ光の光軸６９と垂直な方向において、貫通孔６１と離間する領域を設けることが好ましい。これにより、貫通孔６１の傾斜面に当たった光が波長変換部材６２に再度入ることなく上方に取り出すことができるので、良好な配光特性を得ることができる。   On the other hand, the wavelength conversion member 62 is preferably provided with a region separated from the through hole 61 in a direction perpendicular to the optical axis 69 of the laser beam. Thereby, since the light which hits the inclined surface of the through-hole 61 can be taken out without entering the wavelength conversion member 62 again, a good light distribution characteristic can be obtained.

そこで、本実施形態では、貫通孔６１に、光軸６９となす角度が小さい第１傾斜面６７と、光軸６９となす角度が大きい第２傾斜面６８とを設けている。まず、光軸６９とのなす角度が小さい第１傾斜面６７により、貫通孔６１の光軸６９方向における長さを比較的大きくとることができる。これにより、貫通孔６１の途中において波長変換部材６２の底部を位置させることができるので、戻り光による光取り出しの低下を抑制することができる。さらに、光軸６９とのなす角度が大きい第２傾斜面６８により、光軸６９と垂直な方向において、波長変換部材６２と支持部材６６の内壁とを離間させることができるので、配光特性も向上させることができる。つまり、発光装置１００では、比較的簡単な構成にも関わらず、光取り出し効率と配光特性を両立させることができるのである。ここで、光入射側とは半導体レーザ素子１１からの光が入射する側を指し、光出射側とは光が出射する側を指すものとする。   Therefore, in the present embodiment, the through hole 61 is provided with the first inclined surface 67 having a small angle with the optical axis 69 and the second inclined surface 68 having a large angle with the optical axis 69. First, the first inclined surface 67 having a small angle with the optical axis 69 can make the length of the through hole 61 in the direction of the optical axis 69 relatively large. Thereby, since the bottom part of the wavelength conversion member 62 can be located in the middle of the through-hole 61, the fall of the light extraction by return light can be suppressed. Furthermore, since the second inclined surface 68 having a large angle with the optical axis 69 can separate the wavelength conversion member 62 and the inner wall of the support member 66 in the direction perpendicular to the optical axis 69, the light distribution characteristic is also improved. Can be improved. That is, in the light emitting device 100, it is possible to achieve both light extraction efficiency and light distribution characteristics in spite of a relatively simple configuration. Here, the light incident side refers to the side on which light from the semiconductor laser element 11 is incident, and the light emission side refers to the side from which light is emitted.

以下に、発光装置１００及びそれに用いられる各部材について具体的に説明する。
（発光装置１００） Below, the light-emitting device 100 and each member used for it are demonstrated concretely.
(Light Emitting Device 100)

図３に示すように、発光装置１００は、光源１０と、光源１０からの光を集光させるレンズ２０と、光源１０からの光を光ファイバ４０に接続させるためのコネクタ３０と、光ファイバ４０と、光ファイバ４０の先端部分を保持する先端部材５０と、前記先端部材５０と接続された光部品６０と、を有している。また、光源１０からの光の一部は、光ファイバ３０により、光部品６０に導入され、最終的には、光源１０からの光と、波長変換部材６２に含有されている蛍光体の光との混色光が取り出される。
（光源１０） As illustrated in FIG. 3, the light emitting device 100 includes a light source 10, a lens 20 that collects light from the light source 10, a connector 30 that connects light from the light source 10 to the optical fiber 40, and an optical fiber 40. And a tip member 50 that holds the tip portion of the optical fiber 40, and an optical component 60 connected to the tip member 50. A part of the light from the light source 10 is introduced into the optical component 60 by the optical fiber 30, and finally the light from the light source 10 and the phosphor light contained in the wavelength conversion member 62. The mixed color light is extracted.
(Light source 10)

光源１０は、板状のステム１２と、ステム１２と絶縁され且つステム１２を貫通して固定されたリード１３と、ステム１２に設けられたヒートシンク１４と、ヒートシンク１４に載置された半導体レーザ素子１１と、を備える。半導体レーザ素子１１から出射するレーザ光は指向性が高いため、比較的容易に貫通孔６１に導くことができる。半導体レーザ素子１１は特に限定されないが、ここでは、窒化物半導体からなる青色発光のものを用いている。   The light source 10 includes a plate-like stem 12, a lead 13 that is insulated from the stem 12 and fixed through the stem 12, a heat sink 14 provided on the stem 12, and a semiconductor laser element mounted on the heat sink 14. 11. Since the laser light emitted from the semiconductor laser element 11 has high directivity, it can be guided to the through hole 61 relatively easily. The semiconductor laser element 11 is not particularly limited, but a blue light emitting element made of a nitride semiconductor is used here.

半導体レーザ素子１１は通電により熱を生じるが、この熱はヒートシンク１４及びステム１２を介して外部に放散される。
（支持部材６６） The semiconductor laser element 11 generates heat when energized, but this heat is dissipated to the outside through the heat sink 14 and the stem 12.
(Supporting member 66)

図１に示すように、支持部材６６は、貫通孔を有する基体６３と、貫通孔の表面に形成された反射膜６４と、反射膜６４の表面に形成された保護膜６５と、を有する。支持部材６６には、レーザ光が通過する貫通孔６１が設けられているが、貫通孔６１は波長変換部材６２によって塞がれている。すなわち、半導体レーザ素子１１からの光は支持部材６６の貫通孔６１を通り、波長変換部材６２を介して外部に取り出されることになる。   As shown in FIG. 1, the support member 66 includes a base 63 having a through hole, a reflective film 64 formed on the surface of the through hole, and a protective film 65 formed on the surface of the reflective film 64. The support member 66 is provided with a through hole 61 through which laser light passes. The through hole 61 is closed by a wavelength conversion member 62. That is, the light from the semiconductor laser element 11 passes through the through hole 61 of the support member 66 and is extracted outside through the wavelength conversion member 62.

支持部材６６の内壁には、光入射側には光軸６９に対して第１角度６７ａをなす第１傾斜面６７が設けられ、光出射側には光軸６９に対して第１角度６７ａよりも大きい第２角度６８ａをなす第２傾斜面６８が設けられている。ここで、本実施形態では、基体６３の内壁に反射膜６４及び保護膜６５が形成されているが、この場合は最外層の保護膜６５の表面が第１傾斜面６７及び第２傾斜面６８を構成することになる。もちろん、反射膜６４及び保護膜６５を設けずに、基体６３自体を支持部材６６とすることもできる。この場合は、基体６３の内壁が第１傾斜面６７及び第２傾斜面６８を構成することになる。   The inner wall of the support member 66 is provided with a first inclined surface 67 that forms a first angle 67a with respect to the optical axis 69 on the light incident side, and from the first angle 67a with respect to the optical axis 69 on the light output side. A second inclined surface 68 having a larger second angle 68a is provided. Here, in this embodiment, the reflective film 64 and the protective film 65 are formed on the inner wall of the base 63. In this case, the surface of the outermost protective film 65 is the first inclined surface 67 and the second inclined surface 68. Will be configured. Of course, the base 63 itself can be used as the support member 66 without providing the reflective film 64 and the protective film 65. In this case, the inner wall of the base 63 constitutes the first inclined surface 67 and the second inclined surface 68.

貫通孔６１には、光軸６９との角度が小さい第１傾斜面６７を設けているので、貫通孔６１を比較的長く形成することができる。これにより、波長変換部材６２の底部を貫通孔６１の入口から離間させやすくなるので、戻り光を光出射側に再度向けることができる。   Since the first inclined surface 67 having a small angle with the optical axis 69 is provided in the through hole 61, the through hole 61 can be formed relatively long. As a result, the bottom of the wavelength conversion member 62 can be easily separated from the entrance of the through hole 61, so that the return light can be directed again toward the light emitting side.

光軸６９と第１傾斜面６７とがなす第１角度６７ａの大きさは特に限定されるものではないが、１０度以上５０度未満、好ましくは２０度以上５０度未満、さらに好ましくは２０度以上３０度未満とすることができる。角度が小さいと第１傾斜面６７を反射面として機能させることが難しくなり、角度が大きいと貫通孔６１自体の長さを確保することが難しくなるためである。   The size of the first angle 67a formed by the optical axis 69 and the first inclined surface 67 is not particularly limited, but is 10 degrees or more and less than 50 degrees, preferably 20 degrees or more and less than 50 degrees, and more preferably 20 degrees. The angle can be less than 30 degrees. This is because if the angle is small, it is difficult to make the first inclined surface 67 function as a reflecting surface, and if the angle is large, it is difficult to ensure the length of the through hole 61 itself.

また、第１傾斜面６７よりも光出射側には、第１角度６７ａよりも大きい第２角度６８ａを有する第２傾斜面６８が形成されている。これにより、支持部材６６を光出射側から見た場合において、第２傾斜面６８が占める割合を大きくとることができるので、結果として、波長変換部材６２をその内側に余裕をもって配置することができる。これにより、光軸６９と垂直をなす方向において波長変換部材６２と第２傾斜面６８とを離間させることができるので、良好な配光特性を維持することができる。   Further, a second inclined surface 68 having a second angle 68a larger than the first angle 67a is formed on the light emission side of the first inclined surface 67. As a result, when the support member 66 is viewed from the light emitting side, the proportion of the second inclined surface 68 can be increased, and as a result, the wavelength conversion member 62 can be disposed on the inner side with a margin. . Thereby, since the wavelength conversion member 62 and the 2nd inclined surface 68 can be spaced apart in the direction perpendicular | vertical to the optical axis 69, a favorable light distribution characteristic can be maintained.

光軸６９と第２傾斜面６８とがなす第２角度６８ａの大きさは特に限定されるものではないが、２０度以上６０度未満、好ましくは３０度以上５０度未満、さらに好ましくは３０度以上４５度未満とすることができる。角度が小さいと第２傾斜面と波長変換部材６２とが近接しすぎたり接触したりして配光特性が悪化し、角度が大きいと前方に光を反射し難くなってかえって配光特性を悪化させてしまうからである。   The size of the second angle 68a formed by the optical axis 69 and the second inclined surface 68 is not particularly limited, but is 20 degrees or more and less than 60 degrees, preferably 30 degrees or more and less than 50 degrees, and more preferably 30 degrees. The angle may be less than 45 degrees. If the angle is small, the second inclined surface and the wavelength conversion member 62 are too close or in contact with each other, so that the light distribution characteristic is deteriorated. If the angle is large, it is difficult to reflect light forward, and the light distribution characteristic is deteriorated. Because it will let you.

貫通孔６１の光入射側の開口径は、５０〜６００μｍ、好ましくは１００〜４００μｍ、さらに好ましくは１５０〜３００μｍとすることができる。開口径が小さいとレーザ光が貫通孔６１内へ進入できなくなり、開口径が大きいと戻り光を抑制することができないためである。   The opening diameter on the light incident side of the through hole 61 can be 50 to 600 μm, preferably 100 to 400 μm, and more preferably 150 to 300 μm. This is because if the aperture diameter is small, the laser beam cannot enter the through hole 61, and if the aperture diameter is large, the return light cannot be suppressed.

基体６３の材料としては、鉄及び鉄合金等があげられる。この中でも、後述する波長変換部材６２のバインダーとしてホウケイ酸ガラスを用いる場合は、熱膨張係数を合わせるという観点から、コバール（鉄・コバルト合金）が好ましい。   Examples of the material of the base 63 include iron and iron alloys. Among these, when borosilicate glass is used as the binder of the wavelength conversion member 62 described later, Kovar (iron-cobalt alloy) is preferable from the viewpoint of matching the thermal expansion coefficient.

なお、基体６３を図１のような形状とするには、例えば、円柱状の部材を旋盤を用いて所定の形状に研削すればよい。   In order to make the base body 63 as shown in FIG. 1, for example, a cylindrical member may be ground into a predetermined shape using a lathe.

反射膜６４の材料としては、例えば、銀又はアルミニウムを含む材料とすることができるが、特に銀を含む材料であることが好ましい。銀は硫化などにより変色しやすいが、反射率に優れるので、保護膜６５によりその変色を抑制できれば、光出力の低下を大幅に抑えることができるからである。なお、反射膜６４は、スパッタ等の公知の方法を用いて形成することができる。   As a material of the reflective film 64, for example, a material containing silver or aluminum can be used, but a material containing silver is particularly preferable. This is because silver is easily discolored due to sulfuration or the like, but is excellent in reflectivity. Therefore, if the discoloration can be suppressed by the protective film 65, a decrease in light output can be significantly suppressed. The reflective film 64 can be formed using a known method such as sputtering.

反射膜６４の膜厚は、好ましくは０．１〜１０μｍ、さらに好ましくは０．３〜５μｍ、より好ましくは０．７〜３μｍとすることができる。反射膜６４が薄すぎると熱により劣化しやすくなり、厚すぎると作業効率が落ちてしまうからである   The thickness of the reflective film 64 is preferably 0.1 to 10 μm, more preferably 0.3 to 5 μm, and more preferably 0.7 to 3 μm. This is because if the reflective film 64 is too thin, it tends to be deteriorated by heat, and if it is too thick, the working efficiency is lowered.

保護膜６５は、反射膜６４の劣化を抑制するためのものであり、光透過率の高い材料で形成されることが好ましい。これにより、反射膜６４で反射した光を効率良く外部へ取り出すことができる。具体的には、酸化ケイ素、酸化アルミニウム、窒化ケイ素、窒化アルミニウム、酸化チタン、酸化タンタル、好ましくは酸化ケイ素又は酸化アルミニウム、さらに好ましくは酸化ケイ素を用いることができる。これらの材料を用いることで高いレベルで安定した出力特性が得られるからである。なお、反射膜６４の全てを覆うように保護膜６５を形成することが好ましい。なお、保護膜６５は、スパッタ等の公知の方法を用いて形成することができる。
（波長変換部材６２） The protective film 65 is for suppressing the deterioration of the reflective film 64 and is preferably formed of a material having a high light transmittance. Thereby, the light reflected by the reflective film 64 can be efficiently extracted outside. Specifically, silicon oxide, aluminum oxide, silicon nitride, aluminum nitride, titanium oxide, tantalum oxide, preferably silicon oxide or aluminum oxide, and more preferably silicon oxide can be used. This is because stable output characteristics at a high level can be obtained by using these materials. Note that it is preferable to form the protective film 65 so as to cover the entire reflective film 64. The protective film 65 can be formed using a known method such as sputtering.
(Wavelength conversion member 62)

図１に示すように、支持部材６６の内壁には、波長変換部材６２が載置されている。波長変換部材６２には、蛍光体の粒子が複数含まれており、レーザ光により励起された光とレーザ光そのものの光との混色により所望の色を再現することができる。   As shown in FIG. 1, a wavelength conversion member 62 is placed on the inner wall of the support member 66. The wavelength conversion member 62 includes a plurality of phosphor particles, and a desired color can be reproduced by mixing the light excited by the laser light and the light of the laser light itself.

本実施形態において、波長変換部材６２は、第１傾斜面６７及び第２傾斜面６８に固定される固定領域６２Ａを有している。これにより、波長変換部材６２と支持部材６６との接触面積を増加させることができるので、両者を強固に固定することができる。さらに、波長変換部材６２は、第２傾斜面から離間した離間領域１１Ｂを有するが、これにより配光特性を向上させることできることについては前述のとおりであるので繰り返さない。   In the present embodiment, the wavelength conversion member 62 has a fixed region 62 </ b> A that is fixed to the first inclined surface 67 and the second inclined surface 68. Thereby, since the contact area of the wavelength conversion member 62 and the support member 66 can be increased, both can be firmly fixed. Furthermore, although the wavelength conversion member 62 has the separation region 11B that is separated from the second inclined surface, the fact that the light distribution characteristics can be improved thereby is not repeated.

支持部材６６の内壁に波長変換部材６２を載置するには、例えば、融着を用いることができる。この場合、一定以上の温度雰囲気において、支持部材６６と波長変換部材６２とに圧力をかけることにより両者をダイレクトに接続することができる。   In order to place the wavelength conversion member 62 on the inner wall of the support member 66, for example, fusion can be used. In this case, the two can be directly connected by applying pressure to the support member 66 and the wavelength conversion member 62 in a temperature atmosphere above a certain level.

波長変換部材６２の厚み（光軸６９方向の厚み）や、これに含まれる蛍光体の濃度は特に限定されないが、最終的に得られる光（つまり、レーザ光と蛍光体からの光との混色光）の色や配光などを考慮して決定すればよい。   The thickness of the wavelength conversion member 62 (thickness in the direction of the optical axis 69) and the concentration of the phosphor contained therein are not particularly limited, but the finally obtained light (that is, the color mixture of laser light and light from the phosphor) (Light) color and light distribution may be taken into consideration.

本実施形態では、波長変換部材６２は、蛍光体の粒子と、それらを結着させるバインダーと、を含む。ここでは、蛍光体としてＹＡＧ系蛍光体を用い、バインダーとしてホウケイ酸ガラスを用いている。波長変換部材６２に蛍光体を含有させることにより、光源からの光を異なる波長の光に変換させることができるので、光部品６０を発光装置１００に組み込んだ場合に、例えば、光源からの光（青色）と蛍光体からの光（黄色）との混色光（白色）を取り出すことができる。蛍光体の種類としては、ＹＡＧ系蛍光体の他に、ＬＡＧ系蛍光体もしくはＴＡＧ系蛍光体またはそれらの混合物を用いることができる。   In the present embodiment, the wavelength conversion member 62 includes phosphor particles and a binder that binds them. Here, a YAG phosphor is used as the phosphor, and borosilicate glass is used as the binder. By including the phosphor in the wavelength conversion member 62, light from the light source can be converted into light having a different wavelength. Therefore, when the optical component 60 is incorporated in the light emitting device 100, for example, light from the light source ( The mixed color light (white) of the blue light and the light from the phosphor (yellow) can be taken out. As the type of phosphor, in addition to the YAG phosphor, a LAG phosphor, a TAG phosphor, or a mixture thereof can be used.

＜第２実施形態＞
図４に、第２実施形態に係る発光装置２００の構成を説明するための断面図を示す。発光装置２００は、光源１０と波長変換部材６２との間にコネクタ３０、光ファイバ４０及び先端部材５０が設けられておらず、支持部材６６がステム１２に直接接続されている点以外は、発光装置１００と実質的に同じである。このような構成であっても、支持部材６６と波長変換部材６２とを特定の関係とすることにより、光取り出し効率と配光特性とを両立させることができる Second Embodiment
FIG. 4 is a cross-sectional view for explaining the configuration of the light emitting device 200 according to the second embodiment. The light emitting device 200 emits light except that the connector 30, the optical fiber 40, and the tip member 50 are not provided between the light source 10 and the wavelength conversion member 62, and the support member 66 is directly connected to the stem 12. It is substantially the same as the device 100. Even in such a configuration, the light extraction efficiency and the light distribution characteristics can be made compatible by making the support member 66 and the wavelength conversion member 62 have a specific relationship.

なお、発光装置２００では、光源１０と波長変換部材６２との間に他の部材を介在させていないが、例えば両者の間にレーザ光を集光するレンズを設けることもできる。また、発光素子２００では、発光装置１００と同様に、支持部材６６は基体６３と反射膜６４と保護膜６５とを有するが、図４ではそれらをまとめて支持部材６６としている。   In the light emitting device 200, no other member is interposed between the light source 10 and the wavelength conversion member 62. However, for example, a lens for condensing laser light may be provided between the two. Further, in the light emitting element 200, like the light emitting device 100, the support member 66 includes the base 63, the reflective film 64, and the protective film 65, but these are collectively referred to as the support member 66 in FIG. 4.

本発明は、半導体レーザ素子及び波長変換部材を用いるすべての発光装置に利用することができる。   The present invention can be used for all light emitting devices using a semiconductor laser element and a wavelength conversion member.

１０・・・光源
１１・・・半導体レーザ素子
１２・・・ステム
１３・・・リード
１４・・・ヒートシンク
２０・・・レンズ
３０・・・コネクタ
４０・・・光ファイバ
５０・・・先端部材
６０・・・光部品
６１・・・貫通孔
６２・・・波長変換部材
６２Ａ・・・固定領域
６２Ｂ・・・離間領域
６３・・・基体
６４・・・反射膜
６５・・・保護膜
６６・・・支持部材
６７・・・第１傾斜面
６７ａ・・・第１角度
６８・・・第２傾斜面
６８ａ・・・第２角度
６９・・・光軸
１００、２００・・・発光装置 DESCRIPTION OF SYMBOLS 10 ... Light source 11 ... Semiconductor laser element 12 ... Stem 13 ... Lead 14 ... Heat sink 20 ... Lens 30 ... Connector 40 ... Optical fiber 50 ... Tip member 60 ... Optical component 61 ... Through hole 62 ... Wavelength conversion member 62A ... Fixed area 62B ... Separation area 63 ... Substrate 64 ... Reflective film 65 ... Protective film 66 ... Support member 67 ... first inclined surface 67a ... first angle 68 ... second inclined surface 68a ... second angle 69 ... optical axes 100, 200 ... light emitting device

Claims (3)

レーザ光を出射する半導体レーザ素子と、前記レーザ光により励起される蛍光体を含む波長変換部材と、貫通孔を形成する内壁を有し前記内壁において前記波長変換部材を支持する支持部材と、を備える発光装置であって、
前記支持部材の内壁は、光入射側から光出射側に向かって順に、前記レーザ光の光軸と前記内壁とが第１角度をなす第１傾斜面と、前記レーザ光の光軸と前記内壁とが前記第１角度よりも大きい第２角度をなす第２傾斜面と、を有し、
前記波長変換部材は、その底部が前記貫通孔の光入射側端部よりも光出射側にあり、光入射側から光出射側に向かって順に、少なくとも前記第２傾斜面において固定された固定領域と、前記レーザ光の光軸と垂直をなす方向において前記第２傾斜面から離間した離間領域と、を有する、ことを特徴とする発光装置。 A semiconductor laser element that emits laser light; a wavelength conversion member that includes a phosphor excited by the laser light; and a support member that has an inner wall that forms a through hole and supports the wavelength conversion member on the inner wall. A light emitting device comprising:
The inner wall of the support member includes, in order from the light incident side toward the light emission side, a first inclined surface in which the optical axis of the laser beam and the inner wall form a first angle, and the optical axis of the laser beam and the inner wall And a second inclined surface having a second angle larger than the first angle,
The wavelength conversion member has a bottom portion on the light emission side of the light incident side end of the through hole, and is fixed at least on the second inclined surface in order from the light incidence side to the light emission side. And a separated region spaced apart from the second inclined surface in a direction perpendicular to the optical axis of the laser beam. 前記固定領域は、前記第１傾斜面及び前記第２傾斜面を含むことを特徴とする請求項１に記載の発光装置。   The light emitting device according to claim 1, wherein the fixed region includes the first inclined surface and the second inclined surface. 前記支持部材は、基体と、前記基体の表面に形成された銀又はアルミニウムの少なくとも一方を含む反射膜と、前記反射膜の表面に形成された保護膜と、を有し、
前記保護膜の表面が前記第１傾斜面及び前記第２傾斜面となる、ことを特徴とする請求項１又は２に記載の発光装置。 The support member has a base, a reflective film containing at least one of silver and aluminum formed on the surface of the base, and a protective film formed on the surface of the reflective film,
The light emitting device according to claim 1, wherein the surface of the protective film is the first inclined surface and the second inclined surface.
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