JP2008303417A - めっき成膜装置およびめっき成膜方法 - Google Patents
めっき成膜装置およびめっき成膜方法 Download PDFInfo
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- JP2008303417A JP2008303417A JP2007150460A JP2007150460A JP2008303417A JP 2008303417 A JP2008303417 A JP 2008303417A JP 2007150460 A JP2007150460 A JP 2007150460A JP 2007150460 A JP2007150460 A JP 2007150460A JP 2008303417 A JP2008303417 A JP 2008303417A
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Abstract
【解決手段】めっき成膜装置10は、被成膜基板の表面にCu膜を成膜するためのめっき槽12と、一定量のめっき液を滞留させるめっき液タンク16と、めっき槽12とめっき液タンク16との間でめっき液を循環させるためのめっき液循環ライン18と、めっき液循環ライン18を流れるめっき液に水素を供給する水素供給ライン20を備える。めっき液を循環させながらめっき液に水素を供給して、被成膜基板の表面にCu膜をめっき成膜する
【選択図】図1
Description
Claims (5)
- 被成膜基板の表面にCu膜を成膜するためのめっき槽と、
一定量のめっき液を滞留させるめっき液タンクと、
前記めっき槽と前記めっき液タンクとの間でめっき液を循環させるためのめっき液循環ラインと、
前記めっき液循環ラインを流れるめっき液に水素を供給する水素供給ラインと、を具備することを特徴とするめっき成膜装置。 - 前記水素供給ラインは、水素ガスを気泡化させてめっき液へ供給する構造を有することを特徴とする請求項1に記載のめっき成膜装置。
- めっき液に供給された水素ガスの気泡を除去する脱気機構をさらに具備することを特徴とする請求項2に記載のめっき成膜装置。
- めっき液に被成膜基板を浸漬させて当該被成膜基板の表面にCu膜をめっき成膜する際に、前記めっき液に水素を供給することを特徴とするめっき成膜方法。
- 前記被処理基板を浸漬させるめっき槽と一定量のめっき液を滞留させるめっき液タンクとの間でめっき液を循環させながら、前記めっき槽から前記めっき液タンクへ流れるめっき液に水素ガスを気泡化させて供給し、前記めっき液タンクから前記めっき槽に流れるめっき液を脱気することを特徴とする請求項4に記載のめっき成膜方法。
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JP2007150460A JP4575401B2 (ja) | 2007-06-06 | 2007-06-06 | めっき成膜装置およびめっき成膜方法 |
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JP2007150460A JP4575401B2 (ja) | 2007-06-06 | 2007-06-06 | めっき成膜装置およびめっき成膜方法 |
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JP2008303417A true JP2008303417A (ja) | 2008-12-18 |
JP4575401B2 JP4575401B2 (ja) | 2010-11-04 |
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JP2007150460A Expired - Fee Related JP4575401B2 (ja) | 2007-06-06 | 2007-06-06 | めっき成膜装置およびめっき成膜方法 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8691597B2 (en) | 2011-09-29 | 2014-04-08 | Renesas Electronics Corporation | Method for manufacturing a semiconductor device including application of a plating voltage |
KR20200067995A (ko) * | 2017-09-05 | 2020-06-15 | 사이언테크 코포레이션 | 유체 수송 장치 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020106590A1 (en) | 2018-11-19 | 2020-05-28 | Lam Research Corporation | Cross flow conduit for foaming prevention in high convection plating cells |
US20220307152A1 (en) * | 2019-06-28 | 2022-09-29 | Lam Research Corporation | Byproduct removal from electroplating solutions |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000345398A (ja) * | 1999-06-01 | 2000-12-12 | Seiko Epson Corp | 成膜方法 |
JP2001274161A (ja) * | 2000-03-24 | 2001-10-05 | Kobe Steel Ltd | 半導体配線膜の形成方法 |
JP2005146398A (ja) * | 2003-11-19 | 2005-06-09 | Ebara Corp | めっき方法及びめっき装置 |
-
2007
- 2007-06-06 JP JP2007150460A patent/JP4575401B2/ja not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000345398A (ja) * | 1999-06-01 | 2000-12-12 | Seiko Epson Corp | 成膜方法 |
JP2001274161A (ja) * | 2000-03-24 | 2001-10-05 | Kobe Steel Ltd | 半導体配線膜の形成方法 |
JP2005146398A (ja) * | 2003-11-19 | 2005-06-09 | Ebara Corp | めっき方法及びめっき装置 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8691597B2 (en) | 2011-09-29 | 2014-04-08 | Renesas Electronics Corporation | Method for manufacturing a semiconductor device including application of a plating voltage |
KR20200067995A (ko) * | 2017-09-05 | 2020-06-15 | 사이언테크 코포레이션 | 유체 수송 장치 |
KR102124247B1 (ko) | 2017-09-05 | 2020-06-18 | 사이언테크 코포레이션 | 유체 수송 장치 |
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JP4575401B2 (ja) | 2010-11-04 |
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