JP2008288229A - Light-emitting diode and method of manufacturing the same - Google Patents
Light-emitting diode and method of manufacturing the same Download PDFInfo
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- JP2008288229A JP2008288229A JP2007128777A JP2007128777A JP2008288229A JP 2008288229 A JP2008288229 A JP 2008288229A JP 2007128777 A JP2007128777 A JP 2007128777A JP 2007128777 A JP2007128777 A JP 2007128777A JP 2008288229 A JP2008288229 A JP 2008288229A
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Abstract
Description
本発明は、パーソナルコンピューター、プリンター、PDA、ファクシミリ、携帯電話などの民生機器に使用される発光ダイオードに係わり、更に詳しくは、ボンディングワイヤーを1つの電極から2本出るようにボンディングするダブルボンディングワイヤー実装した発光ダイオード及びその製造方法に関する。 The present invention relates to a light emitting diode used in consumer equipment such as a personal computer, a printer, a PDA, a facsimile, and a mobile phone, and more specifically, a double bonding wire mounting that bonds two bonding wires so as to come out from one electrode. The present invention relates to a light emitting diode and a method for manufacturing the same.
従来、軽薄短小を追求する電子機器向けに提供される表面実装型の発光ダイオードで、一般的な構造としては、ガラスエポキシ樹脂基板の表面に形成された一対の電極パターンを形成し、基板上に導電接着剤によってLEDチップを固着すると共に、前記LEDチップの電極を基板上の電極パターンとを通常1本のボンディングワイヤーで接続し、このボンディングワイヤーとLEDチップを封止樹脂で封止する構造のものがある。(例えば、特許文献1参照) Conventionally, it is a surface-mounted light-emitting diode provided for electronic devices that pursue lightness, smallness, and small size. As a general structure, a pair of electrode patterns formed on the surface of a glass epoxy resin substrate is formed on the substrate. The LED chip is fixed by a conductive adhesive, and the electrode pattern of the LED chip is usually connected to the electrode pattern on the substrate by a single bonding wire, and the bonding wire and the LED chip are sealed with a sealing resin. There is something. (For example, see Patent Document 1)
上記した特許文献1に開示されている発光ダイオードについて説明する。図11及び図12に示すように、発光ダイオード21は、ガラスエポキシ樹脂よりなる絶縁性を有する回路基板22の上面にダイパターン23と、上下面には一対の上面電極24a、24bと下面電極25a、25bがパターン形成されている。前記回路基板22に形成されたダイパターン23の上面にLEDチップ26を固着すると共に、ボンディングワイヤー27でワイヤーボンディング実装する。前記LEDチップ26とボンディングワイヤー27を覆うように透光性封止樹脂28で封止する。
The light emitting diode disclosed in
上記した発光ダイオードの一般的なボンディングワイヤー実装方法について説明する。図13に示すように、(a)でボンディングワイヤー27の先端にボール27aが形成された状態で、キャピラリー29が降下し、(b)でボール27aがLED素子電極26aに接触したときに、熱・荷重・超音波がボール27aに伝わり、ボンディングワイヤー27を接合させる1stボンド工程と、(c)で前記キャピラリー29が一定の高さまで上昇し、(d)で2ndボンドを打つ位置まで移動し、キャピラリー29の軌跡でボンディングワイヤー27の通常ループ形状を決め、キャピラリー29が降下し、ボンディングワイヤー27を上面電極24a(24b)上に押し付け、熱・荷重・超音波を加えてボンディングワイヤー27を接合させる2ndボンド工程と、その後、キャピラリー29は上昇し、キャピラリー29の先端に一定の長さのボンディングワイヤー27を確保した後、引っ張ることで2ndボンド接合部でボンディングワイヤー27を切断する切断工程と、次に、キャピラリー29の先端に一定の長さのボンディングワイヤー27の先端部分に高電圧をかけて火花を飛ばし、その熱で金を溶かし、ボンディングワイヤー27の先端に表面張力によりボール27aを形成して、(a)の状態に戻る。これで1サイクルが完了する。継続してボンディングすることができる。
A general bonding wire mounting method for the above-described light emitting diode will be described. As shown in FIG. 13, when the ball 27a is formed at the tip of the
解決しようとする問題点は、上記した特許文献1に開示されている発光ダイオードの一般的なボンディングワイヤーの実装方法は、製品の熱衝撃や温度サイクルなどの信頼性試験によって、ボンディングされた金ワイヤーが断線してしまい機能不全(不灯)になる。などの問題があった。
The problem to be solved is that a general bonding wire mounting method of a light emitting diode disclosed in
本発明は、上述の欠点を解消するもので、その目的は、ボンディングワイヤーを2本使用するダブルボンディング実装構造にすることにより、製品の熱衝撃や温度サイクルなどの信頼性試験によっても金ワイヤーが断線しない信頼性に優れた発光ダイオード及びその製造方法を提供するものである。 The present invention eliminates the above-mentioned drawbacks. The purpose of the present invention is to provide a double bonding mounting structure that uses two bonding wires, so that the gold wire can be used in reliability tests such as thermal shock and temperature cycle of products. It is an object of the present invention to provide a light emitting diode excellent in reliability that does not break and a method for manufacturing the same.
上記目的を達成するために、本発明における発光ダイオードは、絶縁性を有する回路基板の上面にLEDチップを搭載するダイパターンと、一対の上下電極パターンと、該上下電極パターンを連通する側面電極パターンとを形成し、前記ダイパターン上にLEDチップを固着すると共に、ワイヤーボンディング実装し、前記LEDチップとボンディングワイヤーを透光性封止樹脂により封止してなる発光ダイオードにおいて、前記ボンディングワイヤーを1つの電極から2本出るようにワイヤーボンディング実装したことを特徴とするものである。 In order to achieve the above object, a light emitting diode according to the present invention includes a die pattern on which an LED chip is mounted on an upper surface of an insulating circuit board, a pair of upper and lower electrode patterns, and a side electrode pattern that communicates the upper and lower electrode patterns. In the light-emitting diode in which the LED chip is fixed on the die pattern, wire-bonded and mounted, and the LED chip and the bonding wire are sealed with a translucent sealing resin, the bonding wire is 1 It is characterized in that two wires are mounted from one electrode.
また、前記2本のボンディングワイヤーの実装高さは、第1のボンディングワイヤーは低ループに、第2のボンディングワイヤーは通常ループに配設し、LED素子電極上の第1および第2のボンディングワイヤーの1stボンド位置は重ね合わせ、上面電極パターン上の第1および第2のボンディングワイヤーの2ndボンド位置は異なるごとく配設したことを特徴とするものである。 The mounting height of the two bonding wires is such that the first bonding wire is disposed in a low loop, the second bonding wire is disposed in a normal loop, and the first and second bonding wires on the LED element electrode. The first bond positions are overlapped, and the 2nd bond positions of the first and second bonding wires on the upper surface electrode pattern are arranged differently.
また、前記第1および第2の2本のボンディングワイヤーは平面的に見て長さが違い、方向が同一になるように配設したことを特徴とするものである。 Further, the first and second bonding wires are characterized in that they are arranged so that their lengths are different from each other in the plan view and the directions are the same.
また、前記第1および第2の2本のボンディングワイヤーは平面的に見て長さが同じ、方向がずれているように配設したことを特徴とするものである。 Further, the first and second bonding wires are characterized in that they are arranged so as to have the same length and are shifted in a plan view.
また、発光ダイオードのボンディングワイヤー実装方法は、絶縁性を有する回路基板の上面にLEDチップを搭載するダイパターンと、一対の上下電極パターンと、該上下電極パターンを連通する側面電極パターンとを形成し、前記ダイパターン上にLEDチップを固着すると共に、ワイヤーボンディング実装し、前記LEDチップとボンディングワイヤーを透光性封止樹脂により封止してなる発光ダイオードの製造方法において、前記ボンディングワイヤーを1つの電極から2本出るように設定し、第1のボンディングワイヤーの先端にボールが形成された状態で、キャピラリーが降下し、ボールがLED素子電極に接触したときに、熱・荷重・超音波がボールに伝わり、ボンディングワイヤーを接合させる1stボンド工程と、前記キャピラリーが一定の高さまで上昇し、2ndボンドを打つ位置まで移動し、キャピラリーの軌跡でボンディングワイヤーの低ループ形状を決め、キャピラリーが降下し、ボンディングワイヤーを上面電極パターン上に押し付け、熱・荷重・超音波を加えてボンディングワイヤーを接合させる2ndボンド工程と、その後、キャピラリーは上昇し、キャピラリーの先端に一定の長さのワイヤーを確保した後、引っ張ることで2ndボンド接合部でワイヤーを切断する切断工程と、次に、キャピラリーの先端に一定の長さのワイヤーの先端部分に高電圧をかけて火花を飛ばし、その熱で金を溶かし、ボンディングワイヤーの先端に表面張力によりボールを形成し、前記第1のボンディングワイヤーの1stボンド上に重なり合うように第2のボンディングワイヤーを接合する1stボンド工程と、前記キャピラリーが一定の高さまで上昇し、2本のボンディングワイヤーは平面的に重なるように方向が同一で長さが異なる2ndボンドを打つ位置まで移動し、キャピラリーの軌跡でワイヤーの通常ループ形状を決め、上面電極パターン上に押し付け、熱・荷重・超音波を加えてボンディングワイヤーを接合させる2ndボンド工程と、その後、キャピラリーは上昇し、キャピラリーの先端に一定の長さのボンディングワイヤーを確保した後、引っ張ることで2ndボンド接合部でボンディングワイヤーを切断する切断工程と、よりなることを特徴とするものである。 In addition, the bonding wire mounting method for the light emitting diode includes forming a die pattern for mounting the LED chip on the upper surface of the insulating circuit board, a pair of upper and lower electrode patterns, and a side electrode pattern for communicating the upper and lower electrode patterns. In the method of manufacturing a light emitting diode, the LED chip is fixed on the die pattern, wire-bonded, and the LED chip and the bonding wire are sealed with a translucent sealing resin. Two balls are set to come out from the electrode, and when the ball is formed at the tip of the first bonding wire, when the capillary is lowered and the ball comes into contact with the LED element electrode, heat, load, and ultrasonic wave are generated. 1st bonding process for bonding a bonding wire, The rally rises to a certain height, moves to the position where the 2nd bond is hit, determines the low loop shape of the bonding wire by the trajectory of the capillary, the capillary descends, presses the bonding wire onto the upper surface electrode pattern, heat, load, 2nd bonding process to join the bonding wire by applying ultrasonic wave, and then the capillary is raised, and after securing a certain length of wire at the tip of the capillary, it is pulled to cut the wire at the 2nd bond bonding part Next, a high voltage is applied to the tip of the capillary at the tip of the capillary to blow a spark, the gold is melted by the heat, and a ball is formed at the tip of the bonding wire by surface tension. The second bond so as to overlap the first bond of the first bonding wire The first bonding step of bonding the bonding wire, the capillary is raised to a certain height, and the two bonding wires are moved to a position where two bonding bonds having the same direction and different lengths are hit so that they overlap in a plane. 2nd bond process to determine the normal loop shape of the wire with the trajectory of the wire, press it on the upper surface electrode pattern, and apply the heat, load and ultrasonic wave to join the bonding wire, and then the capillary will rise, and the tip of the capillary will be fixed It is characterized by comprising a cutting step of cutting the bonding wire at the 2nd bond bonding portion by securing the length of the bonding wire and then pulling it.
また、絶縁性を有する回路基板の上面にLEDチップを搭載するダイパターンと、一対の上下電極パターンと、該上下電極パターンを連通する側面電極パターンとを形成し、前記ダイパターン上にLEDチップを固着すると共に、ワイヤーボンディング実装し、前記LEDチップとボンディングワイヤーを透光性封止樹脂により封止してなる発光ダイオードの製造方法において、前記ボンディングワイヤーを1つの電極から2本出るように設定し、第1のボンディングワイヤーの先端にボールが形成された状態で、キャピラリーが降下し、ボールがLED素子電極に接触したときに、熱・荷重・超音波がボールに伝わり、ボンディングワイヤーを接合させる1stボンド工程と、前記キャピラリーが一定の高さまで上昇し、2ndボンドを打つ位置まで移動し、キャピラリーの軌跡でボンディングワイヤーの低ループ形状を決め、キャピラリーが降下し、ボンディングワイヤーを上面電極パターン上に押し付け、熱・荷重・超音波を加えてボンディングワイヤーを接合させる2ndボンド工程と、その後、キャピラリーは上昇し、キャピラリーの先端に一定の長さのボンディングワイヤーを確保した後、引っ張ることで2ndボンド接合部でボンディングワイヤーを切断する切断工程と、次に、キャピラリーの先端に一定の長さのボンディングワイヤーの先端部分に高電圧をかけて火花を飛ばし、その熱で金を溶かし、ボンディングワイヤーの先端に表面張力によりボールを形成し、前記第1のボンディングワイヤーの1stボンド上に重なり合うように第2のボンディングワイヤーを接合する1stボンド工程と、前記キャピラリーが一定の高さまで上昇し、2本のボンディングワイヤーは平面的に見て長さが同じ、方向がずれている2ndボンドを打つ位置まで移動し、キャピラリーの軌跡でボンディングワイヤーの通常ループ形状を決め、上面電極パターン上に押し付け、熱・荷重・超音波を加えてボンディングワイヤーを接合させる2ndボンド工程と、その後、キャピラリーは上昇し、キャピラリーの先端に一定の長さのボンディングワイヤーを確保した後、引っ張ることで2ndボンド接合部でボンディングワイヤーを切断する切断工程と、よりなることを特徴とするものである。 Further, a die pattern for mounting the LED chip on the upper surface of the insulating circuit board, a pair of upper and lower electrode patterns, and a side electrode pattern communicating the upper and lower electrode patterns are formed, and the LED chip is mounted on the die pattern. In the method of manufacturing a light-emitting diode, which is fixed and wire-bonded, and the LED chip and the bonding wire are sealed with a light-transmitting sealing resin, the bonding wire is set so as to come out from one electrode. When the capillary is lowered with the ball formed at the tip of the first bonding wire and the ball comes into contact with the LED element electrode, heat, load, and ultrasonic waves are transmitted to the ball to join the bonding wire. Bonding process and the capillary rises to a certain height and hits 2nd bond 2nd bonding process that moves to the position, determines the low loop shape of the bonding wire by the capillary trajectory, descends the capillary, presses the bonding wire onto the upper surface electrode pattern, and applies the heat, load, and ultrasonic wave to bond the bonding wire After that, the capillary rises, secures a bonding wire of a certain length at the tip of the capillary, and then pulls it to cut the bonding wire at the 2nd bond joint, and then the constant at the tip of the capillary A high voltage is applied to the tip of the bonding wire of length and sparks are blown off, the gold is melted by the heat, a ball is formed at the tip of the bonding wire by surface tension, and on the first bond of the first bonding wire Second bonding wire to overlap The first bonding step of joining the two, and the capillary rises to a certain height, and the two bonding wires move to a position where a 2nd bond having the same length as viewed in plan and shifted in direction is hit, The 2nd bonding process that determines the normal loop shape of the bonding wire by the trajectory, presses it onto the upper electrode pattern, and joins the bonding wire by applying heat, load, and ultrasonic waves, and then the capillary rises and reaches the tip of the capillary. It is characterized by comprising a cutting step of cutting the bonding wire at the 2nd bond bonding portion by securing the length of the bonding wire and then pulling it.
本発明の発光ダイオードは、ボンディングワイヤーを2本使用することで、LED素子電極上の1stボンド部が重なり合って接合部の肉厚が厚くなり、接合強度が大きくなりボンディングワイヤーの断線を生じ難くなる。また、1stボンド部の肉厚が厚くなるので、ボンディングワイヤーが封止樹脂から受ける応力は、第1のボンディングワイヤーと第2のボンディングワイヤー相互に依存する。従って、応力が分散しボンディングワイヤーの断線が生じ難くなる。仮に、どちらか1本のボンディングワイヤーが断線したとしても、もう1本のボンディングワイヤーで電気的接続はとれるので、結果的にLEDの不灯には至らない。また、素子の発熱量が増えても、2本のワイヤーから熱が逃がせる。製品の熱衝撃や温度サイクルなどの信頼性試験によっても金ワイヤが断線しない信頼性に優れた発光ダイオード及びボンディングワイヤー実装方法を提供することが可能である。 In the light emitting diode of the present invention, by using two bonding wires, the 1st bond portion on the LED element electrode overlaps, the thickness of the bonding portion increases, the bonding strength increases, and the bonding wire is less likely to break. . Further, since the thickness of the 1st bond portion is increased, the stress that the bonding wire receives from the sealing resin depends on the first bonding wire and the second bonding wire. Accordingly, the stress is dispersed and the bonding wire is hardly broken. Even if one of the bonding wires is disconnected, the other bonding wire can be electrically connected, and as a result, the LED is not turned off. Moreover, even if the calorific value of the element increases, heat can be released from the two wires. It is possible to provide an excellent light-emitting diode and bonding wire mounting method in which a gold wire is not broken even by a reliability test such as a thermal shock or a temperature cycle of a product.
本発明の発光ダイオードについて、図面に基づいて説明する。 The light emitting diode of the present invention will be described with reference to the drawings.
図1は、本発明の実施例1に係わる表面実装型発光ダイオードの断面図、図2は、図1のワイヤーボンディング実装部の部分平面図である。図1において、発光ダイオード1の構成について説明する。ガラスエポキシ樹脂よりなる絶縁性を有する回路基板2の上面にダイパターン3と、上下面には一対の上面電極パターン4a、4bと下面電極パターン5a、5bと、該上下電極パターン4a、4b、5a、5bとを連通する側面電極パターン6a、6bを形成する。前記ダイパターン3上にLEDチップ7を固着すると共に、2本のボンディングワイヤー8、9が1つのLED素子電極7aから出るように後述する実装方法でワイヤーボンディング実装し、前記LEDチップ7とボンディングワイヤー8、9を透光性封止樹脂10により封止する。
FIG. 1 is a cross-sectional view of a surface-mounted light emitting diode according to Example 1 of the present invention, and FIG. 2 is a partial plan view of a wire bonding mounting portion of FIG. In FIG. 1, the structure of the
前記2本のボンディングワイヤーの実装高さは、第1のボンディングワイヤー8は低ループに、第2のボンディングワイヤー9は通常ループに設定し、LED素子電極7a上の第1および第2のボンディングワイヤー8、9の1stボンド位置は重ね合わせ、上面電極パターン4a、4b上の第1および第2のボンディングワイヤー8、9の2ndボンド位置は平面的に見て、水平距離で長さが違い、方向が同一である。即ち、第1のボンディングワイヤー8は短く、第2のボンディングワイヤー9が長くなっている。
The mounting height of the two bonding wires is such that the
上記した発光ダイオードのボンディングワイヤー実装方法について説明する。図3はボンディングワイヤー実装工程を示し、(a)〜(d)は、従来技術と同様であり、ボンディングワイヤー8の先端にボール8aが形成された状態で、キャピラリー11が降下し、(b)でボール8aがLED素子電極7aに接触したときに、熱・荷重・超音波がボール8aに伝わり、第1のボンディングワイヤー8を接合させる1stボンド工程と、(c)で前記キャピラリー11が一定の高さまで上昇し、(d)で2ndボンドを打つ位置まで移動し、キャピラリー11の軌跡で第1のボンディングワイヤー8の低ループ形状を決め、キャピラリー11が降下し、第1のボンディングワイヤー8を上面電極パターン4a、4b上に押し付け、熱・荷重・超音波を加えて第1のボンディングワイヤー8を接合させる2ndボンド工程と、その後、キャピラリー11は上昇し、キャピラリー11の先端に一定の長さの第1のボンディングワイヤー8を確保した後、引っ張ることで2ndボンド接合部で第1のボンディングワイヤー8を切断する切断工程と、次に、キャピラリー11の先端に一定の長さの第2のボンディングワイヤー9の先端に表面張力によりボール9aを形成される。
A method for mounting the above-described light emitting diode bonding wire will be described. FIG. 3 shows a bonding wire mounting process, wherein (a) to (d) are the same as in the prior art, and the capillary 11 is lowered with the
次に、キャピラリー11が降下し、(e)でボール9aが前記第1のボンディングワイヤー8の1stボンド上に重なり合うように接触したときに、熱・荷重・超音波がボール9aに伝わり、(f)で第2のボンディングワイヤー9を接合させる1stボンド工程と、(g)で前記キャピラリー11が一定の高さまで上昇し、2本のボンディングワイヤー8、9が平面的に重なるように方向が同一で、水平距離で長さが異なる2ndボンドを打つ位置まで移動し、キャピラリー11の軌跡でワイヤーの通常ループ形状を決め、(h)で上面電極パターン4a、4b上に押し付け、熱・荷重・超音波を加えて第2のボンディングワイヤー9を接合させる2ndボンド工程と、その後、キャピラリー11は上昇し、キャピラリー11の先端に一定の長さの第2のボンディングワイヤー9を確保した後、引っ張ることで2ndボンド接合部で第2のボンディングワイヤー9を切断する切断工程とを経て、これで1サイクルが完了する。継続してボンディングすることができる。
Next, when the capillary 11 is lowered and the
上記した構成によりダブルボンディング実装された発光ダイオードの作用・効果について説明する。第1のボンディングワイヤーの1stボンドの条件は、低ループにするため、付け根部分は最初から寝かした状態に形成する。第2のボンディングワイヤーの1stボンドの条件は、通常ループにするため、付け根部分はあまり曲げなくて済む。曲げられた第1のボンディングワイヤーの1stボンドの付け根部分は、2つのボールに挟まれるので、接合強度がアップする。また、2本のボンディングワイヤー8、9の1stボンド部が重なりあっているので、封止樹脂から受ける応力が分散し、明らかにワイヤーの断線が発生し難い。更に、2本のワイヤーの2ndボンド位置が同じ場合には、断線し易くなるので、2本のワイヤーの長さを変えて位置をずらして打つことにより、ワイヤーの断線が発生し難くなる。
The operation and effect of the light emitting diode mounted with double bonding in the above-described configuration will be described. The condition of the first bond of the first bonding wire is that the base portion is laid down from the beginning in order to make the loop low. Since the first bonding condition of the second bonding wire is usually a loop, the base portion does not need to be bent much. Since the base portion of the first bond of the bent first bonding wire is sandwiched between two balls, the bonding strength is increased. In addition, since the first bonding portions of the two
また、LEDチップの場合には、1つの電極から2本のワイヤーが出るので、大電流を流すことができるので、輝度が明るくできる。大電流を流して発熱量が増えても、2本のワイヤーから熱を逃がせる。 Further, in the case of an LED chip, since two wires come out from one electrode, a large current can be passed, so that the brightness can be increased. Even if a large current is applied and the amount of heat generation increases, heat can be released from the two wires.
また、仮にどちらか1本のワイヤーが切断しても、もう1本のワイヤーで電気的接続はとれるので、結果的にLEDの不灯には至らない。 Further, even if one of the wires is cut, the other wire can be electrically connected, and as a result, the LED is not turned off.
図4は、本発明の実施例2に係わる発光ダイオードの断面図、図5は、図4のワイヤーボンディング実装部の部分平面図である。図4及び図5において、上記した実施例1と異なるところは、上面電極パターン4a、4b上の第1および第2のボンディングワイヤー8、9の2ndボンド位置が設計的にみて長さが確保できないときには、第1および第2のボンディングワイヤー8、9は平面的に見て水平距離で長さが同じで、図5に示すように、2ndボンド位置を若干回転方向にずらして打つことにより、前記第1および第2のボンディングワイヤーの2ndボンド位置を異なるようにすることができる。実施例2の作用・効果については前述した実施例1と同様であるので説明は省略する。
4 is a cross-sectional view of a light emitting diode according to Example 2 of the present invention, and FIG. 5 is a partial plan view of the wire bonding mounting portion of FIG. 4 and 5, the difference from the first embodiment is that the 2nd bond positions of the first and
上記した発光ダイオードのボンディングワイヤー実装方法について説明する。図6はボンディングワイヤー実装工程を示し、(a)〜(h)において、実施例1と異なるところは、第1および第2のボンディングワイヤー8、9の2ndボンド位置を若干回転方向にずらして打ち、2ndボンド位置を異なるようにするものである。実施例2の作用・効果については前述した実施例1と同様であるので説明は省略する。
A method for mounting the above-described light emitting diode bonding wire will be described. FIG. 6 shows a bonding wire mounting process. In (a) to (h), the difference from Example 1 is that the 2nd bond positions of the first and
図7は、本発明の実施例3に係わる発光ダイオードの断面図、図8は、図7のワイヤーボンディング実装部の部分平面図である。図7及び図8において、上記した実施例1と異なるところについて説明する。発光ダイオード1は、ガラスエポキシ樹脂よりなる絶縁性を有する回路基板2の略中央部に貫通孔2aが形成され、該貫通孔2aの底面に形成されたダイパターン3上にLEDチップ7を固着するものである。
7 is a cross-sectional view of a light emitting diode according to Example 3 of the present invention, and FIG. 8 is a partial plan view of the wire bonding mounting portion of FIG. 7 and 8, the differences from the first embodiment will be described. In the
前記2本のボンディングワイヤー8、9の1stボンドの高さは、LED素子電極7aの表面が回路基板2より低くなっている場合には、1stボンドの付け根部分に応力が集中し、断線し易くなるが、ボール部分が重なって段になった分だけ1stボンドの付け根部分が高くなるので、応力の影響が弱くなり、断線し難くなる。LEDチップ7を回路基板2の貫通孔2a内に実装することにより、その分薄型の発光ダイオードが実現できる。
When the surface of the
前記2本のワイヤーの実装高さは、実施例1と同様に、第1のボンディングワイヤー8は低ループに、第2のボンディングワイヤー9は通常ループに設定し、LED素子電極7a上の第1および第2のボンディングワイヤー8、9の1stボンド位置は重ね合わせ、上面電極パターン4a、4b上の第1および第2のボンディングワイヤー8、9の2ndボンド位置は平面的に見て、水平距離で長さが違い、方向が同一である。即ち、第1のボンディングワイヤー8は短く、第2のボンディングワイヤー9が長くなっている。上記した発光ダイオードのボンディングワイヤー実装方法及びその作用・効果については、上記した実施例1、2と同様であるので説明は省略する。
The mounting height of the two wires is the same as in the first embodiment, the
図9は、本発明の実施例4に係わる発光ダイオードの断面図、図10は、図9のワイヤーボンディング実装部の部分平面図である。図9及び図10において、上記した実施例2と異なるところについて説明する。実施例3と同様に、ガラスエポキシ樹脂よりなる絶縁性を有する回路基板2の略中央部に貫通孔2aが形成され、該貫通孔の底面に形成されたダイパターン3上にLEDチップ7を固着するものである。
9 is a cross-sectional view of a light emitting diode according to Example 4 of the present invention, and FIG. 10 is a partial plan view of the wire bonding mounting portion of FIG. 9 and FIG. 10, differences from the second embodiment will be described. Similar to the third embodiment, a through hole 2a is formed at a substantially central portion of an insulating
上記した実施例3と異なるところは、前記2本のボンディングワイヤー8、9の2ndボンドの位置とその方向である。即ち、LED素子電極7a上の第1および第2のボンディングワイヤー8、9の1stボンド位置は重ね合わせ、上面電極パターン4a、4b上の第1および第2のボンディングワイヤー8、9の2ndボンド位置は平面的に見て、水平距離で長さが同じで、図10に示すように、2ndボンド位置を若干回転方向にずらして打つことにより、前記第1および第2のボンディングワイヤーの2ndボンド位置を異なるようにすることができる。上記した発光ダイオードのボンディングワイヤー実装方法及びその作用・効果については、上記した実施例1、2及び実施例3と同様であるので説明は省略する。
The difference from the third embodiment described above is the position and direction of the 2nd bond of the two
上述したように、本発明の発光ダイオードは、2本のボンディングワイヤーが1つのLED素子電極から出るようにワイヤーボンディング実装することで、1stボンド部が重なり合って、接合強度が大きくなりボンディングワイヤーの断線を生じ難くなると同時にボンディングワイヤーが封止樹脂から受ける応力は、2本のワイヤーに分散しボンディングワイヤーの断線が生じ難くなる。また、2ndボンド位置をずれた位置に打つことにより、断線がし難くなる。さらに、1つの電極から2本のワイヤーが出るので、大電流を流すことができるので、輝度が明るくできる。大電流を流して発熱量が増えても、2本のワイヤーから熱を逃がせる。仮に、どちらか1本のボンディングワイヤーが断線したとしても、もう1本のボンディングワイヤーで電気的接続はとれるので、結果的にLEDの不灯には至らない。製品の熱衝撃や温度サイクルなどの信頼性試験によっても金ワイヤーが断線しない信頼性に優れた発光ダイオード及びその製造方法を提供することが可能である。 As described above, the light emitting diode of the present invention is mounted by wire bonding so that the two bonding wires come out from one LED element electrode, so that the first bond portion overlaps, the bonding strength increases, and the bonding wire is disconnected. At the same time, the stress that the bonding wire receives from the sealing resin is dispersed in the two wires and the disconnection of the bonding wire is difficult to occur. Moreover, it becomes difficult to disconnect by hitting the 2nd bond position at a shifted position. Furthermore, since two wires come out from one electrode, a large current can flow, so that the brightness can be increased. Even if a large current is applied and the amount of heat generation increases, heat can be released from the two wires. Even if one of the bonding wires is disconnected, the other bonding wire can be electrically connected, and as a result, the LED is not turned off. It is possible to provide a light emitting diode excellent in reliability in which a gold wire is not broken even by a reliability test such as a thermal shock or a temperature cycle of the product, and a manufacturing method thereof.
本発明の実装方法では、2本のボンディングワイヤーが1つのLED素子電極から出るようにワイヤーボンディング実装したが、LEDなどの発光素子の場合、2本のワイヤーの1stボンド部を隣り合って打つ場合でも、大電流と放熱性upはできるが、素子上の電極サイズが2倍必要になるため、光を遮ることとなり、輝度を明るくすることは困難である。 In the mounting method of the present invention, the wire bonding mounting is performed so that the two bonding wires come out from one LED element electrode. However, in the case of a light emitting element such as an LED, the first bond portion of the two wires is hit next to each other. However, although a large current and heat dissipation can be achieved, the electrode size on the element is required twice, so that the light is blocked and it is difficult to increase the luminance.
以上、発光ダイオード及びその製造方法について説明したが、本実装方法については、他の半導体においても実施できることは云うまでもない。 Although the light emitting diode and the manufacturing method thereof have been described above, it is needless to say that the mounting method can be implemented in other semiconductors.
1 発光ダイオード
2 回路基板
2a 貫通孔
3 ダイパターン
4a、4b 上面電極パターン
5a、5b 下面電極パターン
6a、6b 側面電極パターン
7 LEDチップ
7a LED素子電極
8 第1のボンディングワイヤー
8a、9a ボール
9 第2のボンディングワイヤー
10 透光性封止樹脂
11 キャピラリー
DESCRIPTION OF
Claims (6)
A die pattern for mounting an LED chip, a pair of upper and lower electrode patterns, and a side electrode pattern communicating the upper and lower electrode patterns are formed on an upper surface of an insulating circuit board, and the LED chip is fixed on the die pattern. In addition, in the method of manufacturing a light emitting diode formed by wire bonding mounting and sealing the LED chip and the bonding wire with a translucent sealing resin, the bonding wires are arranged so as to come out of two from one electrode, When the ball is formed at the tip of the first bonding wire, the capillary is lowered, and when the ball contacts the LED element electrode, heat, load, and ultrasonic waves are transmitted to the ball to bond the bonding wire. Process and position where the capillary rises to a certain height and hits the 2nd bond 2nd bonding process in which the low-loop shape of the bonding wire is determined by the trajectory of the capillary, the capillary descends, the bonding wire is pressed onto the upper surface electrode pattern, and the bonding wire is joined by applying heat, load, and ultrasonic waves. After that, the capillary rises, a bonding wire having a certain length is secured at the tip of the capillary, and then the cutting process is performed by cutting the bonding wire at the 2nd bond joint by pulling. A high voltage is applied to the tip of the length of the bonding wire, a spark is blown, the gold is melted by the heat, a ball is formed at the tip of the bonding wire by surface tension, and the first bonding wire overlaps with the first bond. Connect the second bonding wire as The first bonding step, the capillary rises to a certain height, and the two bonding wires move to a position where a 2nd bond having the same length in the plane and shifted in direction is hit, and the trajectory of the capillary 2nd bonding process that determines the normal loop shape of the bonding wire, presses it onto the upper electrode pattern, and joins the bonding wire by applying heat, load, and ultrasonic waves, and then the capillary rises and a certain length is attached to the tip of the capillary A method of manufacturing a light-emitting diode, comprising: cutting a bonding wire at a 2nd bond bonding portion by pulling the bonding wire after securing the bonding wire.
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101003393B1 (en) | 2010-04-30 | 2010-12-22 | 테세라 리써치 엘엘씨 | Microelectronic assembly with joined bond elements having lowered inductance |
US8008785B2 (en) | 2009-12-22 | 2011-08-30 | Tessera Research Llc | Microelectronic assembly with joined bond elements having lowered inductance |
JP2012227290A (en) * | 2011-04-18 | 2012-11-15 | Panasonic Corp | Light emitting device, back light unit, liquid crystal display device, and lighting device |
JP2017511598A (en) * | 2014-04-04 | 2017-04-20 | レイヤード オプトエレクトロニック カンパニー リミテッド | Wafer circuit |
WO2021205815A1 (en) * | 2020-04-08 | 2021-10-14 | シチズン電子株式会社 | Linear light-emitting member and planar light-emitting device |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08187860A (en) * | 1995-01-09 | 1996-07-23 | Canon Inc | Liquid jet recording head and liquid jet recorder placing the same |
JPH098360A (en) * | 1995-06-20 | 1997-01-10 | Shichizun Denshi:Kk | Light emitting diode |
JPH10303234A (en) * | 1997-04-25 | 1998-11-13 | Matsushita Electric Ind Co Ltd | Wire bonding method |
JP2001068740A (en) * | 1999-06-30 | 2001-03-16 | Agilent Technol Inc | Method for interconnecting electronic devices |
JP2003045910A (en) * | 2001-08-01 | 2003-02-14 | Matsushita Electric Ind Co Ltd | Capillary tool for manufacturing semiconductor device |
JP2003258310A (en) * | 2002-03-01 | 2003-09-12 | Citizen Electronics Co Ltd | Surface mounting light emitting diode and its producing method |
JP2003298115A (en) * | 2002-04-05 | 2003-10-17 | Citizen Electronics Co Ltd | Light emitting diode |
JP2005123388A (en) * | 2003-10-16 | 2005-05-12 | Sony Corp | Bonding structure, bonding method, semiconductor device and its manufacturing method |
JP2005268497A (en) * | 2004-03-18 | 2005-09-29 | Denso Corp | Semiconductor device and method for manufacturing the same |
JP2006222412A (en) * | 2005-01-17 | 2006-08-24 | Citizen Electronics Co Ltd | Light emitting apparatus |
-
2007
- 2007-05-15 JP JP2007128777A patent/JP5084015B2/en not_active Expired - Fee Related
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08187860A (en) * | 1995-01-09 | 1996-07-23 | Canon Inc | Liquid jet recording head and liquid jet recorder placing the same |
JPH098360A (en) * | 1995-06-20 | 1997-01-10 | Shichizun Denshi:Kk | Light emitting diode |
JPH10303234A (en) * | 1997-04-25 | 1998-11-13 | Matsushita Electric Ind Co Ltd | Wire bonding method |
JP2001068740A (en) * | 1999-06-30 | 2001-03-16 | Agilent Technol Inc | Method for interconnecting electronic devices |
JP2003045910A (en) * | 2001-08-01 | 2003-02-14 | Matsushita Electric Ind Co Ltd | Capillary tool for manufacturing semiconductor device |
JP2003258310A (en) * | 2002-03-01 | 2003-09-12 | Citizen Electronics Co Ltd | Surface mounting light emitting diode and its producing method |
JP2003298115A (en) * | 2002-04-05 | 2003-10-17 | Citizen Electronics Co Ltd | Light emitting diode |
JP2005123388A (en) * | 2003-10-16 | 2005-05-12 | Sony Corp | Bonding structure, bonding method, semiconductor device and its manufacturing method |
JP2005268497A (en) * | 2004-03-18 | 2005-09-29 | Denso Corp | Semiconductor device and method for manufacturing the same |
JP2006222412A (en) * | 2005-01-17 | 2006-08-24 | Citizen Electronics Co Ltd | Light emitting apparatus |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8008785B2 (en) | 2009-12-22 | 2011-08-30 | Tessera Research Llc | Microelectronic assembly with joined bond elements having lowered inductance |
US8410618B2 (en) | 2009-12-22 | 2013-04-02 | Tessera, Inc. | Microelectronic assembly with joined bond elements having lowered inductance |
US8816514B2 (en) | 2009-12-22 | 2014-08-26 | Tessera, Inc. | Microelectronic assembly with joined bond elements having lowered inductance |
TWI451537B (en) * | 2009-12-22 | 2014-09-01 | Tessera Inc | Microelectronic assembly with joined bond elements having lowered inductance |
KR101003393B1 (en) | 2010-04-30 | 2010-12-22 | 테세라 리써치 엘엘씨 | Microelectronic assembly with joined bond elements having lowered inductance |
JP2012227290A (en) * | 2011-04-18 | 2012-11-15 | Panasonic Corp | Light emitting device, back light unit, liquid crystal display device, and lighting device |
JP2017511598A (en) * | 2014-04-04 | 2017-04-20 | レイヤード オプトエレクトロニック カンパニー リミテッド | Wafer circuit |
EP3128552A4 (en) * | 2014-04-04 | 2018-02-28 | Leyard Optoelectronic Co., Ltd | Wafer circuit |
WO2021205815A1 (en) * | 2020-04-08 | 2021-10-14 | シチズン電子株式会社 | Linear light-emitting member and planar light-emitting device |
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