JP2008270763A5 - - Google Patents

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Publication number
JP2008270763A5
JP2008270763A5 JP2008063862A JP2008063862A JP2008270763A5 JP 2008270763 A5 JP2008270763 A5 JP 2008270763A5 JP 2008063862 A JP2008063862 A JP 2008063862A JP 2008063862 A JP2008063862 A JP 2008063862A JP 2008270763 A5 JP2008270763 A5 JP 2008270763A5
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JP
Japan
Prior art keywords
conductive layer
composition
nanoparticles
solvent
forming
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JP2008063862A
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English (en)
Japanese (ja)
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JP5255870B2 (ja
JP2008270763A (ja
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Priority to JP2008063862A priority Critical patent/JP5255870B2/ja
Priority claimed from JP2008063862A external-priority patent/JP5255870B2/ja
Publication of JP2008270763A publication Critical patent/JP2008270763A/ja
Publication of JP2008270763A5 publication Critical patent/JP2008270763A5/ja
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Publication of JP5255870B2 publication Critical patent/JP5255870B2/ja
Expired - Fee Related legal-status Critical Current
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JP2008063862A 2007-03-26 2008-03-13 記憶素子の作製方法 Expired - Fee Related JP5255870B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008063862A JP5255870B2 (ja) 2007-03-26 2008-03-13 記憶素子の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007078348 2007-03-26
JP2007078348 2007-03-26
JP2008063862A JP5255870B2 (ja) 2007-03-26 2008-03-13 記憶素子の作製方法

Publications (3)

Publication Number Publication Date
JP2008270763A JP2008270763A (ja) 2008-11-06
JP2008270763A5 true JP2008270763A5 (enExample) 2011-04-21
JP5255870B2 JP5255870B2 (ja) 2013-08-07

Family

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Family Applications (1)

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JP2008063862A Expired - Fee Related JP5255870B2 (ja) 2007-03-26 2008-03-13 記憶素子の作製方法

Country Status (2)

Country Link
US (1) US7829473B2 (enExample)
JP (1) JP5255870B2 (enExample)

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JP2010251630A (ja) * 2009-04-20 2010-11-04 Toppan Printing Co Ltd 情報記録素子及び情報記録装置並びにその製造方法
US8211782B2 (en) * 2009-10-23 2012-07-03 Palo Alto Research Center Incorporated Printed material constrained by well structures
JP2012033750A (ja) * 2010-07-30 2012-02-16 Toshiba Corp 半導体装置及びその製造方法
TWI584485B (zh) * 2011-10-29 2017-05-21 西瑪奈米技術以色列有限公司 於基材上對齊的網路
JP6275441B2 (ja) * 2013-09-30 2018-02-07 富士フイルム株式会社 半導体膜、酸化物微粒子分散液、半導体膜の製造方法、及び、薄膜トランジスタ
CN105810587B (zh) * 2014-12-31 2019-07-12 清华大学 N型薄膜晶体管的制备方法
US11430512B2 (en) * 2020-06-29 2022-08-30 Taiwan Semiconductor Manufacturing Company Limited Semiconducting metal oxide memory device using hydrogen-mediated threshold voltage modulation and methods for forming the same
JP7594960B2 (ja) * 2021-03-30 2024-12-05 ＪＤＩ Ｄｅｓｉｇｎ ａｎｄ Ｄｅｖｅｌｏｐｍｅｎｔ 合同会社 半導体装置、表示装置、及び半導体装置の製造方法

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JP4293181B2 (ja) * 2005-03-18 2009-07-08 セイコーエプソン株式会社 金属粒子分散液、金属粒子分散液の製造方法、導電膜形成基板の製造方法、電子デバイスおよび電子機器
JP2006269660A (ja) * 2005-03-23 2006-10-05 Nara Institute Of Science & Technology 半導体装置およびその製造方法
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KR100654361B1 (ko) * 2005-09-15 2006-12-08 한양대학교 산학협력단 고분자 박막 내에 형성된 나노 결정체를 사용한 비휘발성고분자 쌍안정성 기억 소자 및 그 제조 방법
JP5305148B2 (ja) * 2006-04-24 2013-10-02 株式会社村田製作所 電子部品、それを用いた電子部品装置およびその製造方法
US20080268229A1 (en) * 2006-08-09 2008-10-30 Daeyeon Lee Superhydrophilic coatings
KR100768632B1 (ko) * 2006-10-30 2007-10-18 삼성전자주식회사 나노입자의 분산방법 및 이를 이용한 나노입자 박막의제조방법
JP5459896B2 (ja) * 2007-03-05 2014-04-02 株式会社半導体エネルギー研究所 配線及び記憶素子の作製方法

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