JP2008270669A5 - - Google Patents

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Publication number
JP2008270669A5
JP2008270669A5 JP2007114622A JP2007114622A JP2008270669A5 JP 2008270669 A5 JP2008270669 A5 JP 2008270669A5 JP 2007114622 A JP2007114622 A JP 2007114622A JP 2007114622 A JP2007114622 A JP 2007114622A JP 2008270669 A5 JP2008270669 A5 JP 2008270669A5
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JP
Japan
Prior art keywords
type semiconductor
semiconductor layer
impurities
peak wavelength
active layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007114622A
Other languages
English (en)
Japanese (ja)
Other versions
JP5060823B2 (ja
JP2008270669A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2007114622A priority Critical patent/JP5060823B2/ja
Priority claimed from JP2007114622A external-priority patent/JP5060823B2/ja
Publication of JP2008270669A publication Critical patent/JP2008270669A/ja
Publication of JP2008270669A5 publication Critical patent/JP2008270669A5/ja
Application granted granted Critical
Publication of JP5060823B2 publication Critical patent/JP5060823B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2007114622A 2007-04-24 2007-04-24 半導体発光素子 Expired - Fee Related JP5060823B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007114622A JP5060823B2 (ja) 2007-04-24 2007-04-24 半導体発光素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007114622A JP5060823B2 (ja) 2007-04-24 2007-04-24 半導体発光素子

Publications (3)

Publication Number Publication Date
JP2008270669A JP2008270669A (ja) 2008-11-06
JP2008270669A5 true JP2008270669A5 (cg-RX-API-DMAC10.html) 2010-06-17
JP5060823B2 JP5060823B2 (ja) 2012-10-31

Family

ID=40049750

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007114622A Expired - Fee Related JP5060823B2 (ja) 2007-04-24 2007-04-24 半導体発光素子

Country Status (1)

Country Link
JP (1) JP5060823B2 (cg-RX-API-DMAC10.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5330880B2 (ja) 2009-03-27 2013-10-30 学校法人 名城大学 発光ダイオード素子及びその製造方法
JP5642623B2 (ja) * 2011-05-17 2014-12-17 株式会社東芝 半導体発光装置
FR3003402B1 (fr) * 2013-03-14 2016-11-04 Centre Nat Rech Scient Dispositif monolithique emetteur de lumiere.

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000133464A (ja) * 1998-10-27 2000-05-12 Toyota Central Res & Dev Lab Inc 有機電界発光素子
WO2001024284A1 (en) * 1999-09-27 2001-04-05 Lumileds Lighting, U.S., Llc A light emitting diode device that produces white light by performing complete phosphor conversion
JP2001352098A (ja) * 2000-06-07 2001-12-21 Sanyo Electric Co Ltd 半導体発光素子およびその製造方法
JP4153455B2 (ja) * 2003-11-28 2008-09-24 学校法人 名城大学 蛍光体および発光ダイオード
JP4613078B2 (ja) * 2005-03-01 2011-01-12 学校法人 名城大学 半導体基板の製造方法
DE112007001235B4 (de) * 2006-05-23 2018-05-09 Meijo University Licht emittierende Halbleitervorrichtung

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