JP2008270404A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2008270404A JP2008270404A JP2007109136A JP2007109136A JP2008270404A JP 2008270404 A JP2008270404 A JP 2008270404A JP 2007109136 A JP2007109136 A JP 2007109136A JP 2007109136 A JP2007109136 A JP 2007109136A JP 2008270404 A JP2008270404 A JP 2008270404A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor chip
- soldered
- disk
- semiconductor device
- main electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 58
- 238000001816 cooling Methods 0.000 claims abstract description 30
- 239000003566 sealing material Substances 0.000 claims abstract description 5
- 238000007789 sealing Methods 0.000 claims abstract 2
- 230000002093 peripheral effect Effects 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000007769 metal material Substances 0.000 claims description 4
- 238000000465 moulding Methods 0.000 claims description 4
- 238000005476 soldering Methods 0.000 abstract description 4
- 238000004804 winding Methods 0.000 description 8
- 229910000679 solder Inorganic materials 0.000 description 7
- 230000017525 heat dissipation Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000007792 addition Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 210000000078 claw Anatomy 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920002379 silicone rubber Polymers 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3675—Cooling facilitated by shape of device characterised by the shape of the housing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Dispersion Chemistry (AREA)
- Synchronous Machinery (AREA)
- Rectifiers (AREA)
Abstract
【解決手段】両面がそれぞれ主電極面をなす半導体チップ510と、外部の放熱板に固定されるとともに半導体チップ510の一方の主電極面が半田付けされる金属製のディスク部500と、半導体チップ510の他方の主電極面に半田付けされるヘッド部521を先端に有するリード520と、少なくとも半導体チップ510の側面とディスク部500およびヘッド部521のそれぞれの2箇所の半田付け部分とを封止する封止材522とを備えており、ディスク部500は、半導体チップ510が半田付けされた面と反対側の面に凸部505を有する。
【選択図】図4
Description
52 正極側放熱板
53 負極側放熱板
54 正極側整流素子
55 負極側整流素子
56 取付孔
500 ディスク部
502 ローレット部
504 凹部
505 凸部
506 接合面
510 半導体チップ
511、512、513 半田
516 緩衝板
520 リード
521 ヘッド部
522 封止材
Claims (6)
- 両面がそれぞれ主電極面をなす半導体チップと、外部の冷却用金属体に固定されるとともに前記半導体チップの一方の主電極面が半田付けされる金属製のディスク部と、前記半導体チップの他方の主電極面に半田付けされるヘッド部を先端に有するリードと、少なくとも前記半導体チップの側面と前記ディスク部および前記ヘッド部のそれぞれの2箇所の半田付け部分とを封止する封止材とを備える半導体装置において、
前記ディスク部は、前記半導体チップが半田付けされた面と反対側の面に凸部を有することを特徴とする半導体装置。 - 請求項1において、
前記ディスク部は前記半導体チップが底面に半田付けされる凹部形状を有し、前記凹部形状の外周面が、前記冷却用金属体に設けられた取付孔の内周面に嵌合し、前記凸部が前記取付孔の外部に露出することを特徴とする半導体装置。 - 請求項2において、
前記凸部は、前記取付孔の開口面よりも外側に突出していることを特徴とする半導体装置。 - 請求項1〜3のいずれかにおいて、
前記凸部は、互いに平行な直線形状を有することを特徴とする半導体装置。 - 請求項1〜3のいずれかにおいて、
前記凸部は、互いに所定間隔で格子状に配置されていることを特徴とする半導体装置。 - 請求項1〜5のいずれかにおいて、
前記ディスク部は、金属材料をプレス成形することにより形成され、前記凸部が前記ディスク部の一部として一体形成されることを特徴とする半導体装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007109136A JP2008270404A (ja) | 2007-04-18 | 2007-04-18 | 半導体装置 |
US12/081,608 US20080259571A1 (en) | 2007-04-18 | 2008-04-17 | Semiconductor device used for a rectifier of a vehicle alternator |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007109136A JP2008270404A (ja) | 2007-04-18 | 2007-04-18 | 半導体装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2008270404A true JP2008270404A (ja) | 2008-11-06 |
Family
ID=39871972
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007109136A Pending JP2008270404A (ja) | 2007-04-18 | 2007-04-18 | 半導体装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US20080259571A1 (ja) |
JP (1) | JP2008270404A (ja) |
-
2007
- 2007-04-18 JP JP2007109136A patent/JP2008270404A/ja active Pending
-
2008
- 2008-04-17 US US12/081,608 patent/US20080259571A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20080259571A1 (en) | 2008-10-23 |
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